MID-INFRARED OPTICAL FREQUENCY COMB GENERATION SYSTEM AND METHOD BASED ON MANIPULATION OF MULTI-PHOTON ABSORPTION EFFECT

Abstract

The present application relates to a mid-infrared (MIR) optical frequency comb (OFC) generation system and method based on manipulation of the multi-photon absorption (MPA) effect, which can break through the repetition-rate limitation for traditional systems and restricted bandwidth as well as high dependence on high-performance pump sources for microcavity-based frequency combs. The system includes a pump light source unit for providing a pump laser, a microring resonator (MRR) unit for broadband comb generation through nonlinear four-wave-mixing process, and an MPA effect control unit for realizing the MIR soliton-state OFC by controlling the loaded voltage or current on the MRR unit. The proposed system and operation method have advantages of being simple in structure, economic for use, and easy to implement for broadband low-noise frequency comb generation.

Claims

1. A mid-infrared (MIR) optical frequency comb (OFC) generation system, comprising: a pump light source unit, a microring resonator (MRR) unit, and an arbitrary waveform generator; wherein, during operation, the pump light source unit inputs a pump laser to the MRR unit, the arbitrary waveform generator inputs a current signal or a voltage signal to the MRR unit and varies a density of free carriers in the MRR unit, and the MRR unit outputs a MIR soliton-state OFC.

2. The MIR OFC generation system according to claim 1, wherein the pump light source unit comprises an MIR narrow-linewidth tunable continuous-wave (c.w.) laser source configured to emit the pump laser and a microscope objective for compressing a mode size of the pump laser.

3. The MIR OFC generation system according to claim 1, wherein the MRR unit comprises an MRR cavity, a ring-shaped metal electrode, a P-type doping area and an N-type doping area that are spaced away from each other and connected by the ring-shaped metal electrode.

4. The MIR OFC generation system according to claim 3, wherein the MRR cavity (31) is made of germanium.

5. (canceled)

6. The MIR OFC generation system according to claim 5, further comprising a waveform monitoring device for monitoring spectral waveform outputted by the MRR unit.

7. The MIR OFC generation system according to claim 6, wherein, the waveform monitoring device is an optical spectrum analyzer.

8-9. (canceled)

10. The MIR OFC generation system according to claim 1, wherein, the arbitrary frequency generator is electrically connected with the ring-shaped metal electrode in the MRR cavity unit.

11-12. (canceled)

13. A method for generating a mid-infrared (MIR) optical frequency comb (OFC) generation by the MIR OFC generation system of claim 1, comprising: emitting the pump laser from an MIR narrow-linewidth tunable continuous-wave (c.w.) laser source disposed in the pump light source unit; adjusting an intensity and a polarization of the pump laser to satisfy a power threshold and a phase matching condition for a four-wave-mixing process; compressing a mode size of the pump laser using a microscope objective and injecting the pump laser to the MRR unit to generate the four-wave-mixing process; tuning a central wavelength of the pump laser to a value larger than a resonant wavelength of the MRR unit; sending the voltage signal or the current signal generated in the arbitrary frequency generator to the MRR unit to decrease the free carrier density of the MRR unit until multiple comb teeth begin to appear; keeping the central wavelength of pump laser constant; and adjusting the arbitrary frequency generator to increase the free carrier density of the MRR unit until the MIR broadband soliton-state OFC is stable.

14. The method for implementing generation of the MIR OFC according to claim 13, wherein the free carrier density of the MRR unit is decreased by increasing the voltage signal or the current signal outputted from the arbitrary waveform generator.

15. The method for implementing generation of the MIR OFC according to claim 14, wherein the free carrier density of the MRR unit is increased by decreasing the voltage signal or the current signal outputted from the arbitrary waveform generator.

Description

BRIEF DESCRIPTION OF THE DRAWINGS

[0029] FIG. 1 is a schematic diagram of the system structure in an embodiment of the present application;

[0030] FIG. 2 is a schematic diagram of a germanium microring resonator (MRR) cavity in an embodiment of the present application;

[0031] FIG. 3a is a spectral result for the modulation-instability state without control on the loading voltage of the electrode;

[0032] FIG. 3b is a spectral result for the generated unstable mid-infrared (MIR) optical frequency comb (OFC) when the loading voltage of the electrode is increased; and

[0033] FIG. 3c is a spectral result for the generated low-noise soliton-state OR; when the loading voltage of the electrode is reduced.

[0034] The reference numbers in the figures are as follows: 1—MIR narrow-linewidth tunable continuous-wave (c.w.) laser source, 2—microscope objective; 3—MRR unit, 31—MRR cavity, 32—silicon substrate. 33—P-type doping area, 34—N-type doping area, 35—ring-shaped metal electrode, 4—collimating lens; 5—optical spectrum analyzer, and 6—arbitrary waveform generator (AFG).

DETAILED DESCRIPTION OF THE EMBODIMENTS

[0035] The present application will be further described below in conjunction with the drawings and specific embodiments.

[0036] An embodiment provides a mid-infrared (MIR) soliton-state optical frequency comb (OFC) generation system based on a microring resonator (MRR), including a pump light source unit for providing a pump laser, an MRR unit for generating the nonlinear four-wave-mixing process; a multi-photon absorption (MPA) effect control unit for manipulating the lifetime (or namely, the density) of free carriers in the MRR unit and a waveform monitoring device for monitoring the output of the MRR unit. The waveform monitoring device used by the embodiment is an optical spectrum analyzer. It can be seen from the drawing, that the output of the MRR unit enters the optical spectrum analyzer 5 through a collimating lens 4. In other embodiments, a time-domain analyzing device, such as a broadband oscilloscope together with a high-speed photoelectric detector and the like; may also be used. However, the system does not rely on such device. Thus, in other embodiments, such device may not be used, and the output of the MRR unit can be directly judged according to the spectral characteristics of light waves.

[0037] As shown in FIG. 1, the pump light source unit in this embodiment includes an MIR narrow-linewidth tunable continuous-wave (c.w.) laser source 1 and a microscope objective 2. By combining with FIG. 2, in this embodiment, the MRR unit 3 includes an MRR cavity 31 composed of a germanium waveguide, a silicon substrate 32 for confining the optical field, a P-type doping area 33 and an N-type doping area 34 for loading voltage, and a ring-shaped metal electrode 35 for connecting with an MPA effect control unit; and in other embodiments, the substrate material in other forms may also be used, as long as the material refractive index is less than that of germanium. The MRR cavity made of other materials may also be used, as long as the materials have the MPA effect, such as the normally-used silicon material. The MPA effect control unit is an arbitrary waveform generator (AFG) 6, and its output is connected with the ring-shaped metal electrode 35 in the MRR unit 3. The output of the AFG 6 may be voltage or current type. In other embodiments, other current or voltage sources with fast tunable ability may also be used as the MPA effect control unit for stable voltage or current output.

[0038] Specifically, the MIR soliton-state OFC may be generated by the following process:

[0039] 1) Adjusting the MIR narrow-linewidth tunable c.w. laser source 1, to ensure the power and polarization of the pump laser emitted by the laser source meeting the intensity threshold and phase matching condition for four-wave-mixing process; and regulating the microscope objective 2 to compress the mode size of pump laser to minimum and then inject to the MRR unit 3 for the four-wave mixing process.

[0040] 2) Tuning the MIR narrow-linewidth tunable c.w. laser source 1 to make its central wavelength first be close while slightly less, and then gradually enlarged to be close but slightly larger than the resonant wavelength of the MRR cavity 31; wherein for a specific tuning process, the central wavelength of pump laser is slowly increased from the peak to half-peak of the MRR transmission spectrum, at this stage the display on the optical spectrum analyzer is as shown in FIG. 3a; subsequently, adjusting the AFG 6 to enable the loaded voltage or current on the ring-shaped metal electrode 35 of the MRR unit to be at high level (typically, 10-20 V), in order to reduce the free carrier density of the MRR cavity 31 as well as the MPA effect for initial generation of multiple comb teeth in the MIR region, and at this stage the display on the optical spectrum analyzer is as shown in FIG. 3b.

[0041] 3) Keeping the wavelength of the MIR narrow-linewidth tunable c.w. laser source 1 unchanged, reducing the output voltage of the AFG 6, wherein typically it should be reduced by more than one half of original level (e.g., to 0-5 V), in order to enhance the intracavity free carrier density as well as the MPA effect for complete generation of soliton-state MRR-based OFC in the MIR region, and at this stage the display on the optical spectrum analyzer is as shown in FIG. 3c.

[0042] The working principle of the present application is as follows:

[0043] At first, the narrow-linewidth tunable c.w. laser source 1 is used as the pump light of the MRR cavity after power amplification; the microscope objective 2 is used for compressing mode size of the pump laser to minimum and then injecting to the MRR. cavity 31, the central wavelength of the narrow-linewidth tunable c.w. laser source 1 is first set to be close while slightly less, and then slowly increased to be slightly larger than the resonant wavelength of the MRR cavity 31 (referring to FIG. 3a, which is a spectral result for the modulation-instability state without control on the loaded voltage of the electrode); next, rising output voltage or current of the AFG 6 to trigger initial generation of multiple comb teeth in the MIR region (referring to FIG. 3b, which is a spectral result for the generated unstable MIR OFC when the loading voltage of the electrode is increased); after that, reducing the output voltage of the AFG 6 in order to enhance the intracavity free carrier density as well as the MPA effect, and then complete generation of the MIR broadband low-noise soliton comb can be realized (referring to FIG. 3c, which is a spectral result for the generated low-noise soliton-state OFC when the loading voltage of the electrode is reduced).

[0044] Referring to FIGS. 3a, 3b and 3c, the result for the MIR soliton-state OFC generation by manipulating the MPA effect. The present application uses the method of manipulating the MPA effect in Group-IV material MRRs, and can achieve dynamic balance of intracavity field by controlling the free carrier density via adjusting the loading voltage of the MRR. It successfully solves the difficult generation problem for MRR-based soliton frequency combs in the MIR region, being capable of emitting the low-noise ultra-broad soliton-state OFC with a smooth hyperbolic-secant spectral profile and a bandwidth of more than 3000 nm (over an octave). The present application adopts the germanium with extremely strong nonlinear effect as the MRR cavity material, and can realize highly-integrated MIR OFC with a low pump threshold of 18 mW and an ultra-high repetition rate of more than 150 GHz. The employed method only needs slowly tuning of pump wavelength to achieve the soliton-state OFC without the requirement for high-performance fast-sweeping sources, having advantages of being simple in structure, economic for use, and high in reliability. This method is also a universal approach, which is suitable for all those materials with the MPA effect in the MIR region such as germanium and silicon.