Yttrium-doped barium fluoride crystal and preparation method and use thereof

Abstract

Disclosed are a yttrium-doped barium fluoride crystal and a preparation method and the use thereof, wherein the yttrium-doped barium fluoride crystal has a chemical composition of Ba.sub.(1−x)Y.sub.xF.sub.2+x, in which 0.01≤x≤0.50. The yttrium-doped BaF.sub.2 crystal of the present invention has improved scintillation performance. The yttrium doping may greatly suppress the slow luminescence component of the BaF.sub.2 crystal and has an excellent fast/slow scintillation component ratio. The doped crystal is coupled to an optical detector to obtain a scintillation probe which is applicable to the fields of high time resolved measurement radiation such as high-energy physics, nuclear physics, ultrafast imaging and nuclear medicine imaging.

Claims

1. A method for preparing an yttrium-doped barium fluoride scintillation crystal having a chemical composition of Ba.sub.(1−x)Y.sub.xF.sub.2+x, wherein 0.01≤x≤0.50, and the method comprises the steps of: weighing and mixing raw materials of YF.sub.3 and BaF.sub.2 according to the molar ratio BaF.sub.2:YF.sub.3=(1−x): x to obtain a mixed powder, wherein 0.01≤x≤0.50; putting the mixed raw materials into crucibles in a vacuum furnace for thorough melting at a temperature of 1200 to 1400° C., and then cooling the mixture to obtain Ba.sub.(1−x)Y.sub.xF.sub.2+x polycrystalline material, or subjecting the mixed powder to isostatic pressing, and putting the resulting substance into crucibles and sintering it at 900 to 1200° C. in vacuum to obtain sintered Ba.sub.(1−x)Y.sub.xF.sub.2+x polycrystalline material; and mixing the resulting polycrystalline material with an appropriate amount of PbF.sub.2 powder, which is act as a deoxidizer, and growing crystals by vertical Bridgman method; wherein the processes of the vertical Bridgman method include: maintaining the furnace in a vacuum degree of less than 10.sup.−3 Pa, melting the Ba.sub.(1−x)Y.sub.xF.sub.2+x polycrystalline material and PbF.sub.2 powder at 1200 to 1400° C., subjecting the resulting melt to crystal growth wherein the descending speed of the crucible is 0.5 to 4 mm/hour, and cooling the grown crystal to room temperature at a temperature decreasing rate of 10 to 50° C./hour; wherein the deoxidizer PbF.sub.2 is added in an amount of 0.5 to 5 wt % of the Ba.sub.(1−x)Y.sub.xF.sub.2+x polycrystalline material.

2. The method of claim 1, wherein the crucibles are high purity graphite crucibles or glassy carbon crucibles.

3. The method of claim 1, wherein the deoxidizer PbF.sub.2 is added in an amount of 0.5 to 2 wt % of the Ba.sub.(1−x)Y.sub.xF.sub.2+x polycrystalline material.

4. The method of claim 1, wherein the isostatic pressing is performed at a pressure of 5 to 20 MPa for 0.1 to 1 hour.

Description

BRIEF DESCRIPTION OF THE DRAWINGS

(1) FIG. 1 shows the X-ray excited emission (XEL) spectra of undoped BaF.sub.2 and 1 at % Y-doped BaF.sub.2 crystal at room temperature, wherein the solid line represents the spectrum of undoped BaF.sub.2, and the dash line represents the spectrum of Y-doped BaF.sub.2 crystal;

(2) FIG. 2 shows the light output and decay kinetic characteristics of undoped BaF.sub.2 and 1 at % Y-doped BaF.sub.2 crystal at different integrate time;

(3) FIG. 3 shows an 1 at % Y-doped BaF.sub.2 crystal with a length of 200 mm;

(4) FIG. 4 shows a scintillation crystal probe composed of an undoped BaF.sub.2 crystal and a photomultiplier tube R2059;

(5) FIG. 5 shows a scintillation crystal probe composed of a Y-doped BaF.sub.2 crystal and a photomultiplier tube R2059;

(6) FIG. 6 shows a scintillator probe composed of a Y-doped BaF.sub.2 microcrystalline/organic composite scintillator and APD; and

(7) FIG. 7 shows a scintillation crystal probe composed of a Y.sup.−doped BaF.sub.2 crystal and a SiPM.

DETAILED DESCRIPTION

(8) The present invention will be further described with the following embodiments below. It should be understood that the following embodiments are only used for explaining this invention, but not to limit this invention.

(9) The present application relates to the improvement of the scintillation performance, especially time response characteristics of BaF.sub.2 crystal. Yttrium-doping can greatly suppress the slow scintillation component of BaF.sub.2 crystal. The yttrium-doped barium fluoride crystal has a chemical composition of Ba.sub.(1−x)Y.sub.xF.sub.2+x, wherein x represents the doping concentration of the yttrium, and 0.01≤x≤0.50. If the doping concentration of the yttrium is too high, the cost of the crystal will be greatly increased, and the density of the doped crystal will be lowered, which is unfavourable for the radiation detecting efficiency. Preferably, 0.01≤x≤0.10. The yttrium-doped barium fluoride crystal may be in monocrystalline or polycrystalline state. The yttrium-doped crystal can be used in the fields of high time-resolved radiation such as high energy physics, nuclear physics, ultrafast imaging, nuclear medicine imaging, etc.

(10) In the present application, the raw materials are thoroughly mixed according to the molar ratio of BaF.sub.2:YF.sub.3=1−x (x=0.01-0.50), and an appropriate amount of PbF.sub.2 is added as a deoxidizing agent. The resulting mixture is subjected to crystal growth by using vertical Bridgman furnace in vacuum. The preparation method of the yttrium-doped barium fluoride crystal provided by the present application will be exemplified below.

(11) Preparation of Ba.sub.(1−x)Y.sub.xF.sub.2+x polycrystalline material. Raw materials of YF.sub.3 and BaF.sub.2 are weighed and mixed according to the molar ratio BaF.sub.2: YF.sub.3=(1−x): x to obtain a mixed material. Specifically, BaF.sub.2 powder having a purity of 99.99% or more and YF.sub.3 powder having a purity of 99.9% or more are used as raw materials, and these raw materials are fully dried in a vacuum oven at 150 to 200° C. The dried raw materials are weighed according to the molar ratio of BaF.sub.2:YF.sub.3=(1−x): x (wherein x is 0.01 to 0.50), an appropriate amount of PbF.sub.2 powder is weighed as a deoxidizer, and BaF.sub.2, YF.sub.3 and PbF.sub.2 are thoroughly mixed to obtain a mixed powder.

(12) The mixed powder is fed into a crucible, thoroughly melted and mixed in a vacuum furnace at 1200 to 1400° C., and cooled, to obtain a Ba.sub.(1−x)Y.sub.xF.sub.2+x polycrystalline material. As an example, the mixture is fed into a high-purity graphite crucible or a glassy carbon crucible, and then the mixture is thoroughly and mixed in a vacuum furnace to obtain a BaF.sub.2—YF.sub.3 solid solution melt, and the solid solution melt is cooled to obtain Ba.sub.(1−x)Y.sub.xF.sub.2+x polycrystalline material.

(13) Alternatively, the mixed powder is subjected to isostatic pressing, fed into a crucible, and then sintered at 900 to 1200° C. in vacuum to obtain Ba.sub.(1−x)Y.sub.xF.sub.2+x polycrystalline material. The isostatic pressing may be performed at a pressure of 5 to 20 MPa for 0.2 to 2 hours. The crucible may be a high purity graphite one or a glassy carbon one. As an example, the mixed raw materials are put into a plastic bag and isostatically pressed in an isostatic press, and then transferred into a high-purity graphite or a glassy carbon crucible, placed in a vacuum furnace for sintering at a temperature of 900 to 1200° C., and cooled, to obtain Ba.sub.(1−x)Y.sub.xF.sub.2+x polycrystalline material.

(14) The Ba.sub.(1−x)Y.sub.xF.sub.2+x polycrystalline material is mixed with an appropriate amount of PbF.sub.2 powder, and subjected to crystal growth by a melt method. The melt method includes, but is not limited to, vertical Bridgman method and Czochralski method. The deoxidizer PbF.sub.2 may be added in an amount of 0.1 to 5 wt %, preferably 0.5 to 2 wt %, of the Ba.sub.(1−x)Y.sub.xF.sub.2+x polycrystalline material.

(15) The processes of the vertical Bridgman method include: maintaining a vacuum degree of less than 10.sup.−3 Pa, melting the Ba.sub.(1−x)Y.sub.xF.sub.2+x polycrystalline material and PbF.sub.2 powder at 1200 to 1400° C., subjecting the resulting melt to start the crystal growth, wherein the descending speed of the crucible is 0.5 to 4 mm/hour, and cooling the grown crystal to room temperature at a temperature decreasing rate of 10 to 50° C./hour. Specifically, a high-purity graphite crucible or a glassy carbon crucible having a capillary structure at the bottom is machined according to the size and number of crystals to be grown, and the Ba.sub.(1−x)Y.sub.xF.sub.2+x polycrystalline material and an appropriate amount of PbF.sub.2 powder are fed into the graphite crucibles or the glassy carbon crucibles, and placed into a vertical vacuum Bridgman furnace. A vacuum pumping device is turned on so that the vacuum inside the furnace is less than 10.sup.−3 Pa, and then the temperature is gradually increased to thoroughly melt the raw material, and a descending device is turned on for crystal growth, wherein the descending speed is 0.5 to 4 mm/h. After the growth is completed, the crystal is cooled to room temperature at a temperature decreasing rate of 10 to 50° C./hour, and as-grown crystal ingot is taken out for machining.

(16) The yttrium-doped crystal in the present application can be coupled to a photodetector such as a photomultiplier tube, an avalanche photodiode, and a silicon photomultiplier tube for use in the field of high time-resolved radiation detection. The present application relates to the improvement of the scintillation performance, especially time response characteristics of BaF.sub.2 crystal. Yttrium doping can greatly suppress the slow scintillation component of BaF.sub.2 crystal. That is, the yttrium-doped barium fluoride crystal of the present application has an excellent fast/slow scintillation ratio, and the yttrium-doped crystal can be coupled to a photodetector to form a scintillation probe, which is applicable to the field of high time-resolved radiation, including but not limited to, high energy physics, nuclear physics, ultrafast imaging, nuclear medicine imaging, etc.

(17) Hereinafter, the present invention will be better described with the following representative examples. It should be understood that the following examples are only used to explain this invention and do not limit the scope of this invention. Any non-essential improvements and modifications made by a person skilled in the art based on this invention are all protected under the scope of this invention. The specific parameters below are only exemplary, and a person skilled in the art can choose proper values within an appropriate range according to the description of this article, and are not restricted to the specific values cited below. It should be noted that the embodiments described below are only for explaining the application, and are a part of but not all of the embodiments of the application. Based on the embodiments of the present application, all other embodiments obtained by those skilled in the art without creative efforts are within the protection scope of the application.

Example 1

(18) Preparation of 1 at % Y-Doped BaF.sub.2 Crystal

(19) 1) BaF.sub.2 having a purity of 99.99% and YF.sub.3 having a purity of 99.9% were used as the starting materials. These starting materials were weighed in a molar ratio of BaF.sub.2:YF.sub.3=0.99:0.01, and heated in a vacuum oven at 200° C. for 20 hours. An appropriate amount of PbF.sub.2 was weighed as a deoxidizer. BaF.sub.2, YF.sub.3, and PbF.sub.2 were thoroughly mixed to obtain a BaF.sub.2—YF.sub.3—PbF.sub.2 mixture.

(20) 2) The BaF.sub.2—YF.sub.3—PbF.sub.2 mixture was fed into a high-purity graphite crucible, and then thoroughly melted in a vacuum furnace at 1300° C. to obtain a BaF.sub.2—YF.sub.3 solid solution melt. The melt was cooled to room temperature to obtain Ba.sub.0.99Y.sub.0.01F.sub.2.01 polycrystalline material.

(21) 3) A high-purity graphite crucible or a glassy carbon crucible having a capillary structure at the bottom was machined according to the size and number of crystals to be grown, and the Ba.sub.0.99Y.sub.0.01F.sub.2.01 polycrystalline material and an appropriate amount of PbF.sub.2 powder were fed into the graphite crucible, and placed into a vacuum crucible descending furnace, wherein the deoxidizer PbF.sub.2 was added in an amount of 0.5 wt % of the Ba.sub.(1−x)Y.sub.xF.sub.2+x polycrystalline material.

(22) 4) A vacuum pumping device was turned on so that the vacuum degree inside the furnace was less than 10.sup.−3 Pa, and then the temperature was gradually increased to 1300° C. to thoroughly melt the raw material, and a descending device was turned on for crystal growth, wherein the descending speed was 2 mm/h. After the growth was completed, the crystal was cooled to room temperature at a temperature decreasing rate of 50° C./hour, and the crystal ingot was taken out for machining.

Example 2

(23) Preparation of 10 at % Y-Doped BaF.sub.2 Crystal

(24) 1) BaF.sub.2 having a purity of 99.99% and YF.sub.3 having a purity of 99.99% were used as the starting materials. These starting materials were fully dried in a vacuum oven, and weighed in a molar ratio of BaF.sub.2:YF.sub.3=0.90:0.10. An appropriate amount of PbF.sub.2 was weighed as a deoxidizer. BaF.sub.2, YF.sub.3, and PbF.sub.2 were thoroughly mixed to obtain a BaF.sub.2—YF.sub.3—PbF.sub.2 mixture.

(25) 2) The BaF.sub.2—YF.sub.3—PbF.sub.2 mixture was fed into a glassy carbon crucible, and then thoroughly melted in a vacuum furnace at 1350° C. to obtain a BaF.sub.2—YF.sub.3 solid solution melt. The melt was cooled to room temperature to obtain Ba.sub.0.9Y.sub.0.1F.sub.2.1 polycrystalline material.

(26) 3) A high-purity graphite crucible having a capillary structure at the bottom was machined according to the size and number of crystals to be grown, and the Ba.sub.0.9Y.sub.0.1F.sub.2.1 polycrystalline material and an appropriate amount of PbF.sub.2 powder were fed into the graphite crucible, and placed into a vacuum crucible descending furnace, wherein the deoxidizer PbF.sub.2 was added in an amount of 1 wt % of the Ba.sub.(1−x)Y.sub.xF.sub.2+x polycrystalline material.

(27) 4) A vacuum pumping device was turned on so that the vacuum degree inside the furnace was less than 10.sup.−3 Pa, and then the temperature was gradually increased to 1350° C. to thoroughly melt the raw material, and a descending device was turned on for crystal growth, wherein the descending speed was 1 mm/h. After the growth was completed, the crystal was cooled to room temperature at a temperature decreasing rate of 25° C./hour, and the crystal ingot was taken out for machining.

Example 3

(28) Preparation of 20 at % Y-Doped BaF.sub.2 Crystal

(29) 1) BaF.sub.2 having a purity of 99.99% and YF.sub.3 having a purity of 99.99% were used as the starting materials. These starting materials were fully dried in a vacuum oven, and weighed in a molar ratio of BaF.sub.2:YF.sub.3=0.80:0.20. An appropriate amount of PbF.sub.2 was weighed as a deoxidizer. BaF.sub.2, YF.sub.3, and PbF.sub.2 were thoroughly mixed to obtain a BaF.sub.2—YF.sub.3—PbF.sub.2 mixture.

(30) 2) The BaF.sub.2—YF.sub.3—PbF.sub.2 mixture was fed into a plastic bag and isostatically pressed in an isostatic press, and then placed in a vacuum furnace for vacuum sintering at a temperature of 900 to 1200° C., and cooled, to obtain Ba.sub.0.8Y.sub.0.2F.sub.2.2 polycrystalline material, wherein the isostatic pressing treatment was performed at a pressure of 20 MPa for 0.5 hour.

(31) 3) Alternatively, the mixture was fed into a plastic bag and isostatically pressed in an isostatic press, and then transferred into a high-purity graphite or a glassy carbon crucible, placed in a vacuum furnace for sintering at a temperature of 1000° C., and cooled, to obtain Ba.sub.0.8Y.sub.0.2F.sub.2.2 polycrystalline material.

(32) 4) The Ba.sub.0.8Y.sub.0.2F.sub.2.2 polycrystalline material and an appropriate amount of PbF.sub.2 powder were fed into a glassy carbon crucible having a capillary structure at the bottom and having an inner diameter of 80 mm. The glassy carbon crucible filled with the raw materials was placed in a vacuum crucible descending furnace. The deoxidizer PbF.sub.2 was added in an amount of 1.5 wt % of the Ba.sub.(1−x)Y.sub.xF.sub.2+x polycrystalline material.

(33) 5) A vacuum pumping device was turned on so that the vacuum degree inside the furnace was less than 10.sup.−3 Pa, and then the temperature was gradually increased to 1250° C. to thoroughly melt the raw material, and a descending device was turned on for crystal growth, wherein the descending speed was 1 mm/h. After the growth was completed, the crystal was cooled to room temperature at a temperature decreasing rate of 10° C./hour, and the crystal ingot with a diameter of 80 mm was taken out for machining.

Comparative Example 1

(34) Preparation of Pure (Undoped) BaF.sub.2 Crystal

(35) 1) BaF.sub.2 having a purity of 99.99% was used as the starting material, and heated in a vacuum oven at 200° C. for 20 hours. An appropriate amount of PbF.sub.2 was weighed as a deoxidizer. BaF.sub.2 and PbF.sub.2 were thoroughly mixed to obtain a BaF.sub.2—PbF.sub.2 mixture.

(36) 2) The BaF.sub.2—PbF.sub.2 mixture was fed into a high-purity graphite crucible, and then thoroughly melted in a vacuum furnace at 1300° C. to obtain a BaF.sub.2—YF.sub.3 solid solution melt. The melt was cooled to room temperature to obtain BaF.sub.2 polycrystalline material.

(37) 3) A high-purity graphite crucible or a glassy carbon crucible having a capillary structure at the bottom was machined according to the size and number of crystals to be grown, and the BaF.sub.2 polycrystalline material and an appropriate amount of PbF.sub.2 powder were fed into the graphite crucible, and placed into a vacuum crucible descending furnace, wherein the deoxidizer PbF.sub.2 was added in an amount of 0.5 wt % of the BaF.sub.2 polycrystalline material.

(38) 4) A vacuum pumping device was turned on so that the vacuum degree inside the furnace was less than 10.sup.−3 Pa, and then the temperature was gradually increased to 1300° C. to thoroughly melt the raw material, and a descending device was turned on for crystal growth, wherein the descending speed was 2 mm/h. After the growth was completed, the crystal was cooled to room temperature at a temperature decreasing rate of 20° C./hour, and the crystal ingot was taken out for machining.

(39) Use of Pure BaF.sub.2 Crystal in Radiation Detection

(40) The crystal ingot obtained in Comparative Example 1 was machined into a BaF.sub.2 crystal having a size of 30*30*20 mm.sup.3. A Hamamatsu R2059 photomultiplier tube (PMT) was coupled to one 30*30 mm.sup.2 end surface of the crystal with a coupling silicone grease (Dow Corning XIAMETER® PMX-200), and the other surfaces were wrapped with Tyvek, to form a scintillation crystal probe as shown in FIG. 4.

Example 4

(41) Use of Y-Doped BaF.sub.2 Crystal in Radiation Detection

(42) The crystal ingot obtained in Example 1 was machined into a 1 at % Y-doped BaF.sub.2 crystal having a size of 30*30*20 mm.sup.3. One 30*30 mm.sup.2 end surface of the crystal was coupled to a Hamamatsu R2059 photomultiplier tube (PMT) with a coupling silicone grease (Dow Corning XIAMETER® PMX-200), and the other surfaces of the crystal were wrapped with Tyvek, to form a scintillation crystal probe as shown in FIG. 5. The probe has excellent slow component suppression and time-resolved properties, and can be used in radiation detection such as high energy physics, nuclear physics, nuclear medicine imaging, X-ray imaging, etc.

Example 5

(43) Use of Y-Doped BaF.sub.2 Crystal in Radiation Detection

(44) The crystal obtained in Example 2 was ground into a monocrystalline powder and uniformly dispersed in a high ultraviolet ray-transmissive epoxy resin to prepare a composite scintillator having a size of Φ5*5 mm.sup.3. One Φ5 mm of the crystal was coupled to a UV-sensitive avalanche photodiode (APD) to with a coupling silicone grease (Dow Corning XIAMETER® PMX-200), and the other surfaces of the crystal were wrapped with Teflon tape, to form a scintillation crystal probe as shown in FIG. 6. The probe has excellent slow component suppression and time-resolved properties, and can be used in radiation detection such as high energy physics, nuclear physics, nuclear medicine imaging, X-ray imaging, etc.

Example 6

(45) Use of Y-Doped BaF.sub.2 Crystal in Radiation Detection

(46) The crystal ingot obtained in Example 2 was machined into a Y.sup.−doped BaF.sub.2 crystal having a size of 10*10*10 mm.sup.3. One 10*10 mm.sup.2 surface of the crystal was coupled to a silicon photomultiplier (SiPM) with a coupling silicone grease (Dow Corning XIAMETER® PMX-200), and the other surfaces of the crystal were wrapped with Tyvek, to form a scintillation crystal probe as shown in FIG. 7. The probe has excellent slow component suppression and time-resolved properties, and can be used in radiation detection such as high energy physics, nuclear physics, nuclear medicine imaging, X-ray imaging, etc.

Example 7

(47) Preparation of 30 at % Y-Doped BaF.sub.2 Crystal

(48) 1) BaF.sub.2 having a purity of 99.99% and YF.sub.3 having a purity of 99.99% were used as the starting materials. These starting materials were fully dried in a vacuum oven, and weighed in a molar ratio of BaF.sub.2:YF.sub.3=0.70:0.30. An appropriate amount of PbF.sub.2 was weighed as a deoxidizer. BaF.sub.2, YF.sub.3, and PbF.sub.2 were thoroughly mixed to obtain a BaF.sub.2—YF.sub.3—PbF.sub.2 mixture.

(49) 2) The BaF.sub.2—YF.sub.3—PbF.sub.2 mixture was fed into a glassy carbon crucible, and then thoroughly melted in a vacuum furnace at 1350° C. to obtain a BaF.sub.2—YF.sub.3 solid solution melt. The melt was cooled to room temperature to obtain Ba.sub.0.7Y.sub.0.3F.sub.2.3 polycrystalline material.

(50) 3) A high-purity graphite crucible having a capillary structure at the bottom was machined according to the size and number of crystals to be grown, and the Ba.sub.0.7Y.sub.0.3F.sub.2.3 polycrystalline material and an appropriate amount of PbF.sub.2 powder were fed into the graphite crucible, and placed into a vacuum crucible descending furnace.

(51) 4) A vacuum pumping device was turned on so that the vacuum degree inside the furnace was less than 10.sup.−3 Pa, and then the temperature was gradually increased to thoroughly melt the raw material, and a descending device was turned on for crystal growth, wherein the descending speed was 1 mm/h. After the growth was completed, the crystal was cooled to room temperature at a temperature decreasing rate of 20° C./hour, and the crystal ingot was taken out for machining.

Example 8

(52) Preparation of 40 at % Y-Doped BaF.sub.2 Crystal

(53) 1) BaF.sub.2 having a purity of 99.99% and YF.sub.3 having a purity of 99.99% were used as the starting materials. These starting materials were fully dried in a vacuum oven, and weighed in a molar ratio of BaF.sub.2:YF.sub.3=0.60:0.40. An appropriate amount of PbF.sub.2 was weighed as a deoxidizer. BaF.sub.2, YF.sub.3, and PbF.sub.2 were thoroughly mixed to obtain a BaF.sub.2—YF.sub.3—PbF.sub.2 mixture.

(54) 2) The BaF.sub.2—YF.sub.3—PbF.sub.2 mixture was fed into a glassy carbon crucible, and then thoroughly melted in a vacuum furnace at 1350° C. to obtain a BaF.sub.2—YF.sub.3 solid solution melt. The melt was cooled to room temperature to obtain Ba.sub.0.6Y.sub.0.4F.sub.2.4 polycrystalline material.

(55) 3) A high-purity graphite crucible having a capillary structure at the bottom was processed according to the size and number of crystals to be grown, and the Ba.sub.0.6Y.sub.0.4F.sub.2.4 polycrystalline material and an appropriate amount of PbF.sub.2 powder were fed into the graphite crucible, and placed into a vacuum crucible descending furnace.

(56) 4) A vacuum pumping device was turned on so that the vacuum degree inside the furnace was less than 10.sup.−3 Pa, and then the temperature was gradually increased to thoroughly melt the raw material, and a descending device was turned on for crystal growth, wherein the descending speed was 0.8 mm/h. After the growth was completed, the crystal was cooled to room temperature at a temperature decreasing rate of 15° C./hour, and the crystal ingot was taken out for machining.

Example 9

(57) Preparation of 50 at % Y-Doped BaF.sub.2 Crystal

(58) 1) BaF.sub.2 having a purity of 99.99% and YF.sub.3 having a purity of 99.99% were used as the starting materials. These starting materials were fully dried in a vacuum oven, and weighed in a molar ratio of BaF.sub.2:YF.sub.3=0.50:0.50. An appropriate amount of PbF.sub.2 was weighed as a deoxidizer. BaF.sub.2, YF.sub.3, and PbF.sub.2 were thoroughly mixed to obtain a BaF.sub.2—YF.sub.3—PbF.sub.2 mixture.

(59) 2) The BaF.sub.2—YF.sub.3—PbF.sub.2 mixture was fed into a glassy carbon crucible, and then thoroughly melted in a vacuum furnace at 1360° C. to obtain a BaF.sub.2—YF.sub.3 solid solution melt. The melt was cooled to room temperature to obtain Ba.sub.0.5Y.sub.0.5F.sub.2.5 polycrystalline material.

(60) 3) A high-purity graphite crucible having a capillary structure at the bottom was processed according to the size and number of crystals to be grown, and the Ba.sub.0.5Y.sub.0.5F.sub.2.5 polycrystalline material and an appropriate amount of PbF.sub.2 powder were fed into the graphite crucible, and placed into a vacuum crucible descending furnace.

(61) 4) A vacuum pumping device was turned on so that the vacuum degree inside the furnace was less than 10.sup.−3 Pa, and then the temperature was gradually increased to thoroughly melt the raw material, and a descending device was turned on for crystal growth, wherein the descending speed was 0.5 mm/h. After the growth was completed, the crystal was cooled to room temperature at a temperature decreasing rate of 10° C./hour, and the crystal ingot was taken out for machining.

(62) In order to fully understand the invention, some specific technical details and processes are described in the above examples, but the invention may also be implemented in other ways than the above description, and those skilled in the art can make similar expansion without departing the content of this invention.