Multispectral imaging device with array of microlenses

Abstract

The invention relates to a multispectral imaging device including: a photosensitive detector DET made up of a matrix of pixels; an array of microlenses ML1, ML2, ML3 reproducing the matrix of pixels; and a filter module MF formed by a matrix of individual filters λ1, λ2, λ3 reproducing the matrix of pixels. The device is remarkable in that the array of microlenses is arranged directly in contact with the detector DET, and the filter module MF is made on a substrate SS that is put into contact with the array of microlenses.

Claims

1. A multispectral imaging device comprising: a photosensitive detector made up of a matrix of pixels formed on a first substrate, each pixel comprising a photosensitive zone; an array of microlenses, each of the microlenses overlapping one corresponding pixel of the matrix of pixels, each of the microlenses configured for focusing incident light on a photosensitive zone of the corresponding pixel, each lens being a plano-convex lens with a flat side facing the photosensitive detector; and a filter module formed by a matrix of individual filters each facing one pixel of the matrix of pixels; wherein the filter module comprises a bidimensional matrix of at least four generally identical filter cells, each of the filter cells having at least two of the individual filters; wherein the filter module is formed on a second substrate and faces said array of microlenses, with one of the individual filters in direct contact with a convex side of a corresponding one of the microlenses; and said filter module is adhesively bonded to said detector by adhesive located at an outside edge of the filter module, so that there is no adhesive between the filter module and the photosensitive zones of the photosensitive detector.

2. A device according to claim 1, characterized in that said filter module is provided with alignment patterns.

3. A device according to claim 1, characterized in that said filter module is made up of two mirrors spaced apart by a spacer, the filter module having a plurality of filter cells and each of said filter cells having at least two filters.

4. A device according to claim 3, characterized in that at least one of said filters has a bandpass transfer function.

5. A device according to claim 3, characterized in that at least some of said filter cells are in alignment in a first strip.

6. A device according to claim 5, characterized in that at least some of said filter cells are in alignment in a second strip parallel to and at a distance from the first strip.

7. A device according to claim 3, characterized in that at least two of said filters that are adjacent are separated by a crosstalk barrier.

8. A device according to claim 3, characterized in that at least one of said filters is panchromatic.

9. A device according to claim 1, characterized in that said detector is integrated in CMOS technology.

Description

BRIEF DESCRIPTION OF THE DRAWINGS

(1) The present invention appears below in greater detail in the context of the following description of embodiments given by way of illustration and with reference to the accompanying figures, in which:

(2) FIGS. 1a and 1b are theoretical diagrams of a one-dimensional filter cell, and more particularly:

(3) FIG. 1a is a plan view of the cell; and

(4) FIG. 1b is a section view of the cell;

(5) FIGS. 2a to 2c show three steps of a first technique for making a filter module;

(6) FIGS. 3a to 3f show six steps of a second technique for making the filter module;

(7) FIG. 4 is a theoretical diagram of a two-dimensional filter module;

(8) FIG. 5 is a diagram of a filter module having 64 filters having a screening grid;

(9) FIG. 6 is a diagram of a filter module in which each cell comprises nine filters; and

(10) FIG. 7 is a section diagram of a device of the invention.

(11) Elements present in more than one of the figures are given the same references in each of them.

DETAILED DESCRIPTION OF THE INVENTION

(12) The description begins with a filter module having a plurality of generally identical filter cells.

(13) With reference to FIGS. 1a and 1b, a filter cell comprises three Fabry-Perot type interference filters FP1, FP2, and FP3 in successive alignment so as to form a strip.

(14) The cell is constituted by a stack on a substrate SUB, e.g. made of glass or silica, the stack comprising a first mirror MIR1, a spacer SP, and a second mirror MIR2.

(15) The spacer SP, which defines the center wavelength of each filter, is thus constant for a given filter, and varies from one filter to another. Its profile is staircase-shaped since each filter has a surface that is substantially rectangular.

(16) A first method of making the filter module in thin film technology is given by way of example.

(17) With reference to FIG. 2a, the first mirror MIR1 is initially deposited on the substrate SUB followed by one or more dielectric layers TF for defining the spacer SP. The mirror is either metallic or dielectric.

(18) With reference to FIG. 2b, the dielectric TF is etched: initially in the second and third filters FP2 and FP3 in order to define the thickness of the spacer SP in the second filter FP2; and subsequently in the third filter FP3 in order to define the thickness of the spacer in the third filter.

(19) The spacer SP in the first filter FP1 has the deposition thickness.

(20) With reference to FIG. 2c, the second mirror MIR2 is deposited on the spacer SP in order to finalize the three filters.

(21) The spacer SP may be obtained by depositing a dielectric TF followed by successive etching as described above, but it could also be obtained by depositing a plurality of thin layers in succession.

(22) By way of example, the wavelength range 800 nanometers (nm) to 1000 nm can be scanned by modifying the optical thickness of the spacer over the range 1.4λ.sub.0/2 to 2.6λ.sub.0/2 (for λ.sub.0=900 nm and n=1.45, with e varying over the range 217 nm to 403 nm).

(23) It should be observed at this point that the thickness of the spacer needs to be small enough to obtain only one transmission band in the range to be probed. Specifically, the greater this thickness, the greater the number of wavelengths that satisfy the condition [ne=kλ/2].

(24) A second method of making the filter module is described below.

(25) With reference to FIG. 3a, the method begins by thermally oxidizing a silicon substrate SIL on its bottom face OX1 and on its top face OX2.

(26) With reference to FIG. 3b, the bottom and top faces OX1 and OX2 of the substrate are covered respectively in a bottom layer PHR1 and a top layer PHR2 of photosensitive resin. Thereafter, a rectangular opening is formed in the bottom layer PHR1 by photolithography.

(27) With reference to FIG. 3c, the thermal oxide on the bottom face OX1 is etched in register with the rectangular opening formed in the bottom layer PHR1. The bottom and top layers PHR1 and PHR2 are then removed.

(28) With reference to FIG. 3d, the substrate SIL is subjected to anisotropic etching (e.g. crystallographic orientation 1-0-0) in register with the rectangular opening, the thermal oxide of the bottom face OX1 acting as a mask and the thermal oxide of the top face OX2 acting as an etching stop layer. The etching may either be wet, using a solution of potassium hydroxide (KOH) or of trimethyl ammonium hydroxide (TMAH), or dry, in a plasma. The result of this operation is that there remains only an oxide membrane at the bottom of the rectangular opening.

(29) With reference to FIG. 3e, this oxide is etched: initially in the second and third filters FP2 and FP3 in order to define the thickness of the spacer SP in the second filter FP2; and subsequently in the third filter FP3 in order to define the thickness of the spacer SP in the third filter.

(30) With reference to FIG. 3f, the first and second mirrors M1 and M2 are deposited on the bottom and top faces OX1 and OX2 of the substrate SIL.

(31) It is optionally possible to terminate making the filter module by depositing a passivation layer (not shown) on one and/or the other of the bottom and top faces OX1 and OX2.

(32) The invention thus makes it possible to make a set of aligned filters, which filters may be referenced in a one-dimensional space.

(33) With reference to FIG. 4, the invention also makes it possible to organize the filter cells in a two-dimensional space. Such an organization is often referred to as a matrix.

(34) Four identical horizontal strips each comprise four cells. The first strip, which appears at the top of the figure, corresponds to the first row of an matrix and comprises cells IF11 to IF14. The second, third, and fourth strips respectively comprise the cells IF21 to IF24, the filters IF31 to IF34, and the cells IF41 to IF44.

(35) The organization is said to be a matrix since the cell IFjk belonging to the j.sup.th horizontal strip is also part of a k.sup.th vertical strip comprising the cells IF1k, IF2k, . . . , IF4k.

(36) With reference to FIG. 5, it is desirable for the various filters of the filter module to be well separated in order to avoid any partial overlap of one filter on a filter adjacent thereto, and in order to minimize any problem with crosstalk. To do this, it is possible to add a grid on the filter module (shown in black in the figure) constituting a crosstalk barrier for defining all of the filters. This grid should be absorbent. By way of example, an absorbent grid may be made by depositing and etching black chromium (chromium+chromium oxide), while a reflecting grid may be made by depositing and Etching chromium.

(37) With reference to FIG. 6, each filter cell now has nine filters. Each of these cells is in the form of a square within which there is a corresponding filter tuned to a distinct wavelength λ1, λ2, λ3, λ4, . . . , λ9.

(38) In this figure, for reasons of clarity, the spacing between the cells is voluntarily increased compared with the spacing between two filters. Naturally, in reality, these spacings are identical.

(39) The filter module is thus associated with a detector capable of measuring the light fluxes produced by the various filters. The detector is thus made up of a plurality of compartments.

(40) With reference to FIG. 7, there can be seen the filter module MF as shown in FIG. 6.

(41) The detector DET is made using CMOS technology on a substrate SS made of silicon. At the center of each compartment CP1, CP2, CP3 of square shape there is a photosensitive zone PS1, PS2, PS3.

(42) Above each compartment CP1, CP2, CP3, there is a microlens ML1, ML2, ML3 of diameter equal to the side of the compartment.

(43) The filter module MF bears against the array of microlenses ML1, ML2, ML3, such that the filters λ1, λ2, λ3 face the microlenses ML1, ML2, ML3.

(44) The positioning of this module MF is performed by means of alignment patterns, a technique known to the person skilled in the art of photolithography, which is therefore not described in greater detail herein.

(45) The filter module MF is fastened on the detector DET by means of a margin of adhesive ST.

(46) To clarify ideas, it is specified that the pixels commonly have a size of the order of 5 micrometers.

(47) The above-described embodiments of the invention have been selected because of their concrete nature. Nevertheless, it is not possible to list exhaustively all possible embodiments covered by the invention. In particular, any of the means described may be replaced by equivalent means without going beyond the ambit of the present invention.