Apparatus for depositing metal films with plasma treatment
11133155 ยท 2021-09-28
Assignee
Inventors
- Daping Yao (San Jose, CA, US)
- Hyman W. H. Lam (San Jose, CA, US)
- John C. FORSTER (Mountain View, CA, US)
- Jiang LU (Milpitas, CA, US)
- Can XU (San Jose, CA, US)
- Dien-Yeh Wu (San Jose, CA, US)
- Paul F. Ma (Santa Clara, CA, US)
- Mei Chang (Saratoga, CA, US)
Cpc classification
C23C16/455
CHEMISTRY; METALLURGY
H01J2237/0213
ELECTRICITY
C23C16/06
CHEMISTRY; METALLURGY
C23C16/52
CHEMISTRY; METALLURGY
International classification
C23C16/52
CHEMISTRY; METALLURGY
C23C16/455
CHEMISTRY; METALLURGY
Abstract
Embodiments of a gas delivery apparatus for use in a radio frequency (RF) processing apparatus are provided herein. In some embodiments, a gas delivery apparatus for use in a radio frequency (RF) processing apparatus includes: a conductive gas line having a first end and a second end; a first flange coupled to the first end; a second flange coupled to the second end, wherein the conductive gas line extends through and between the first and second flanges; and a block of ferrite material surrounding the conductive gas line between the first and second flanges.
Claims
1. A method for providing one or more gases to a process chamber, comprising: flowing a gas from a gas source to a processing volume of the process chamber through a gas delivery apparatus comprising a conductive gas line completely enclosed between first and second flanges that contact a block of ferrite material; grounding a first end of the conductive gas line; and providing an RF current to the process chamber, wherein the RF current is coupled to a second end of the conductive gas line, wherein the RF current is blocked from forming electromagnetic fields inside the conductive gas line by the block of ferrite material.
2. The method of claim 1, wherein a frequency of the RF current is about 0.1 MHz to about 70 MHz.
3. The method of claim 1, further comprising controlling a temperature of at least one of the gas delivery apparatus or a chamber lid of the process chamber.
4. The method of claim 1, wherein the one or more gases is a metal-organic precursor.
5. The method of claim 1, wherein the gas delivery apparatus comprises two conductive gas lines, and wherein the block of ferrite material surrounds both of the conductive gas lines.
6. The method of claim 1, wherein the gas delivery apparatus comprises two gas lines, a conductive gas line and a dielectric gas line, and wherein the block of ferrite material surrounds both of the gas lines.
7. The method of claim 1, further comprising controlling a temperature of the conductive gas line.
8. The method of claim 1, wherein the block of ferrite material is one of a nickel-zinc ferrite or a manganese-zinc ferrite.
9. The method of claim 1, wherein the conductive gas line comprises aluminum or stainless steel.
10. The method of claim 1, wherein a non-conductive bracket is disposed around the block of ferrite material and used to secure the block of ferrite material to the conductive gas line.
11. The method of claim 10, wherein the non-conductive bracket is made of polytetrafluorethylene (PTFE).
12. A method for providing one or more gases to a process chamber, comprising: flowing a gas from a gas source to a processing volume of the process chamber through a gas delivery apparatus comprising two gas lines completely enclosed between first and second flanges that contact a block of ferrite material; grounding a first end of at least one of the gas lines; and providing an RF current to the process chamber, wherein the RF current is coupled to a second end of at least one of the gas lines, and wherein the RF current is blocked from forming electromagnetic fields inside both of the gas line by the block of ferrite material.
Description
BRIEF DESCRIPTION OF THE DRAWINGS
(1) Embodiments of the present disclosure, briefly summarized above and discussed in greater detail below, can be understood by reference to the illustrative embodiments of the disclosure depicted in the appended drawings. However, the appended drawings illustrate only typical embodiments of the disclosure and are therefore not to be considered limiting of scope, for the disclosure may admit to other equally effective embodiments.
(2)
(3)
(4)
(5)
(6) To facilitate understanding, identical reference numerals have been used, where possible, to designate identical elements that are common to the figures. The figures are not drawn to scale and may be simplified for clarity. Elements and features of one embodiment may be beneficially incorporated in other embodiments without further recitation.
DETAILED DESCRIPTION
(7) Embodiments of the present disclosure generally relate to a gas delivery apparatus for use in a radio frequency (RF) processing apparatus (e.g., a process chamber). Embodiments of the inventive gas delivery apparatus advantageously block RF current from forming electromagnetic fields inside gas lines of the gas delivery apparatus, thus preventing premature gas breakdown prior to the gas reaching the process chamber. The gas delivery apparatus also prevents the parasitic plasma formation within the gas delivery line.
(8)
(9) The first flange 106 includes one or more first openings 112, corresponding to a first end of the first conduit 102 (at the first end 104 of the apparatus) and any other gas lines disposed through the gas delivery apparatus 100. The second flange 110 include one or more second openings 114, corresponding to a second end of the first conduit 102 (at the second end 108 of the apparatus) and any other gas lines disposed through the gas delivery apparatus 100.
(10) A central portion of the first conduit 102 is disposed between the first flange 106 and the second flange 110. In some embodiments, the gas delivery apparatus 100 may comprise a plurality of conduits. For example, as depicted in
(11) In some embodiments, for example as depicted in
(12) The first conduit 102 is formed from a conductive material. For example, the first conduit 102 may be made of a metal, such as aluminum or stainless steel. In some embodiments, one end of the conductive gas line may be grounded while the other end is coupled to a current source. For example, the first end 104 may be coupled to ground and the second end 108 may be coupled to an RF power source to providing RF current to the first conduit 102.
(13) The gas delivery apparatus 100 further includes a block of ferrite material 124 that surrounds at least a portion of the conductive gas line (e.g., the first conduit 102). In some embodiments, and as depicted in
(14)
(15) The block of ferrite material 124 may be formed from iron oxide containing compounds. In some embodiments the iron oxide containing compounds may further include zinc additives. For example, in some embodiments, the block of ferrite material 124 may comprise a nickel-zinc ferrite, such as comprising iron oxide, nickel, and zinc., a manganese-zinc ferrite, such as comprising iron oxide, manganese, and zinc, or the like. The block of ferrite material 124 is configured to block RF currents from reaching the interior of the conductive gas lines extending through the gas delivery apparatus 100. For example, the block of ferrite material may block RF currents having frequencies in the range of about 0.1 MHz to about 70 MHz, for example about 13.56 MHz. The particular material and configuration of the block of ferrite material may be selected dependent upon the RF frequency.
(16)
(17) In some embodiments, the gas delivery apparatus 100 may include a non-conductive spacer material (not shown) disposed between the first conduit 102 and the block of ferrite material 124. In some embodiments, the non-conductive material may be formed according to the configuration of the first conduit 102. For example, non-conductive cylindrical tubular brackets may be disposed around the first conduit 102 and the second conduit 118 to prevent direct contact between the first conduit 102 and the block of ferrite material 124. In some embodiments, the non-conductive spacer material may be a non-conductive polymer, for example, polytetrafluorethylene (PTFE).
(18) In some embodiments, and as depicted in
(19) In some embodiments, and as depicted in
(20)
(21) The process chamber 400 receives RF current from an RF power source 460 coupled to the process chamber, for example, via an impedance tuning network 470. In some embodiments in accordance with the present disclosure, for example, as depicted in
(22) As depicted in
(23) As depicted in
(24) In some embodiments, the temperature of the chamber lid 406 may be controlled by the heat transfer apparatus for controlling the temperature of the first conduit 102. In some embodiments, alternatively or in combination, a separate heat transfer apparatus may be provided to control the temperature of the chamber lid 406.
(25) In operation, one or more gases are flowed from the gas source 450 to the process chamber 400 via the gas delivery apparatus 100. For example, the one or more gases may be process gas for forming a plasma and processing substrates inside the process chamber. In some embodiments, the one or more gases may be a metal-organic precursor for depositing metallic films on a substrate inside the process chamber 400.
(26) While flowing the one or more gases, the RF power source 460 provides an RF current to the process chamber 400 via the chamber lid 406 and the second flange 110 coupled to the chamber lid 406. The RF current flows along the outside of the gas delivery apparatus 100 while the one or more gases flow inside the first conduit 102, for example, inside the first conduit 102 and the second conduit 118, as depicted in
(27) In some embodiments, the temperature of the chamber lid 406 may be controlled to further avoid premature gas breakdown which may lead to a parasitic plasma formation between the gas delivery apparatus 100 and the RF power source 460, for example, between the first conduit 102 and the RF power source 460. In other embodiments, controlling the temperature of the chamber lid 406 may prevent condensation of gases inside the first conduit 102 or between the first conduit 102 and the RF power source 460.
(28) Thus, embodiments of a gas delivery apparatus for providing a zero or substantially zero RF field inside the gas line between the gas feed-through and RF electrode of metal organic chemical vapor deposition (MOCVD) or plasma enhanced chemical vapor deposition (PECVD) systems and methods of using the same have been provided herein.
(29) While the foregoing is directed to embodiments of the present disclosure, other and further embodiments of the disclosure may be devised without departing from the basic scope thereof.