Optoelectronic Component and Method for Producing an Optoelectronic Component

Abstract

In an embodiment an optoelectronic component includes a semiconductor chip having an electrical contact, the semiconductor chip configured to emit primary electromagnetic radiation, a carrier having an electrically conductive coating on which the semiconductor chip with the electrical contact is arranged, a contact agent connecting the electrically conductive coating of the carrier and the electrical contact of the semiconductor chip with one another and a passivation layer arranged in places on the electrically conductive coating, wherein an outer surface of the electrically conductive coating is completely encapsulated by the passivation layer and the contact agent, wherein the passivation layer has a penetration, wherein the contact agent protrudes beyond the penetration in a lateral direction, and wherein the semiconductor chip is a flip chip.

Claims

1.-19. (canceled)

20. An optoelectronic component comprising: a semiconductor chip comprising an electrical contact, the semiconductor chip configured to emit primary electromagnetic radiation; a carrier comprising an electrically conductive coating on which the semiconductor chip with the electrical contact is arranged; a contact agent connecting the electrically conductive coating of the carrier and the electrical contact of the semiconductor chip with one another; and a passivation layer arranged in places on the electrically conductive coating, wherein an outer surface of the electrically conductive coating is completely encapsulated by the passivation layer and the contact agent, wherein the passivation layer has a penetration, wherein the contact agent protrudes beyond the penetration in a lateral direction, and wherein the semiconductor chip is a flip chip.

21. The optoelectronic component according to claim 20, wherein the passivation layer has the penetration so that a contact point of the electrically conductive coating is accessible, and wherein the penetration is completely filled with the contact agent.

22. The optoelectronic component according to claim 20, wherein the electrically conductive coating is configured to be reflective for the primary electromagnetic radiation.

23. The optoelectronic component according to claim 20, wherein the passivation layer comprises a layer stack.

24. The optoelectronic component according to claim 20, wherein the passivation layer is arranged for the most part on the electrically conductive coating.

25. The optoelectronic component according to claim 20, further comprising a metal layer arranged in the penetration between the contact agent and the electrically conductive coating.

26. The optoelectronic component according to claim 20, wherein a side surface of the electrically conductive coating is free of the passivation layer, and wherein the side surface of the electrically conductive coating, which is free of the passivation layer, is completely covered by a potting body.

27. The optoelectronic component according to claim 20, wherein the semiconductor chip is surrounded by a conversion element configured to convert the primary electromagnetic radiation into secondary electromagnetic radiation of a different wavelength range.

28. The optoelectronic component according to claim 27, further comprising an optical element is arranged downstream of the semiconductor chip.

29. The optoelectronic component according to claim 28, wherein the passivation layer has a smaller refractive index than the optical element and/or the conversion element.

30. The optoelectronic component according to claim 20, wherein the electrically conductive coating comprises a first electrically conductive coating and a second electrically conductive coating, and wherein the first electrically conductive coating is spaced apart at most by 100 micrometres in lateral directions from the second electrically conductive coating.

31. A method for producing an optoelectronic component, the method comprising: providing a carrier comprising an electrically conductive coating; providing a passivation layer on the carrier; providing a radiation-emitting semiconductor chip comprising an electrical contact; and connecting the radiation-emitting semiconductor chip to the carrier by a contact agent, wherein an outer surface of the electrically conductive coating is completely encapsulated by the passivation layer and the contact agent, wherein the passivation layer has a penetration, wherein the contact agent protrudes beyond the penetration in a lateral direction, and wherein the radiation-emitting semiconductor chip is a flip chip.

32. The method according to claim 31, wherein a contact point of the electrically conductive coating is accessible in a region of the penetration.

33. The method according to claim 32, wherein the contact agent is applied to the electrical contact, and wherein the contact agent is pressed onto the contact point of the electrically conductive coating while connecting so that the contact agent protrudes beyond regions of the passivation layer surrounding the penetration.

34. The method according to claim 33, further comprising heating the radiation-emitting semiconductor chip while connecting.

35. The method according to claim 32, further comprising, prior to connecting, depositing a metal layer by an electroplating process on the contact point of the electrically conductive coating.

36. The method according to claim 31, further comprising structuring the passivation layer by a shadow mask and a physical etching process.

37. The method according to claim 31, further comprising structuring the passivation layer by a photoresist mask and a chemical etching process.

Description

BRIEF DESCRIPTION OF THE DRAWINGS

[0063] In the following, the optoelectronic component and the method for producing the optoelectronic component are explained in more detail with reference to the figures with reference to exemplary embodiments.

[0064] FIGS. 1 and 2 show schematic sectional views of an optoelectronic component according to an exemplary embodiment;

[0065] FIGS. 3, 4, 5, 6, 7 and 8 show schematic sectional views of method stages of the method for producing an optoelectronic component according to an exemplary embodiment;

[0066] FIGS. 9 and 10 show schematic sectional views of method stages of the method for producing an optoelectronic component according to an exemplary embodiment;

[0067] FIGS. 11, 12 and 13 show schematic sectional views of method stages for the production of a structured passivation layer for an optoelectronic component according to an exemplary embodiment;

[0068] FIGS. 14, 15, 16, 17 and 18 show schematic sectional views of method stages for the production of a structured passivation layer for an optoelectronic component according to an exemplary embodiment;

[0069] FIGS. 19 and 20 show schematic sectional views of method stages for producing an optoelectronic component according to an exemplary embodiment; and

[0070] FIGS. 21, 22 and 23 show schematic sectional views of an optoelectronic component each according to an exemplary embodiment.

[0071] Identical, similar or similarly acting elements are marked with the same reference signs in the figures. The figures and the proportions of the elements shown in the figures to one another are not to be regarded as true to scale. Rather, individual elements can be oversized for better representability and/or comprehensibility.

DETAILED DESCRIPTION OF ILLUSTRATIVE EMBODIMENTS

[0072] The optoelectronic component 1 according to the exemplary embodiment of FIGS. 1 and 2 comprises a radiation-emitting semiconductor chip 2, which comprises a first electrical contact 3a and a second electrical contact 3b, which are electrically conductively connected to a first electrically conductive coating 5a and a second electrically conductive coating 5b of a carrier 4 by means of a contact agent 6, respectively. The first electrically conductive coating 5a and the second electrically conductive coating form an electrically conductive coating 5. The electrically conductive coating 5 is arranged on a carrier plate 4a.

[0073] A conversion element 14 and an optical element 15 are arranged above the radiation-emitting semiconductor chip 2 and the first electrically conductive coating 5a and the second electrically conductive coating 5b.

[0074] Further, the first electrically conductive coating 5a and the second electrically conductive coating 5b each have opposing side surfaces 8a arranged between the radiation-emitting semiconductor chip 2 and the carrier plate 4a. A conversion element 14 is also arranged on a second main surface of the radiation-emitting semiconductor chip 2 located in the intermediate space. Further, the intermediate space between the two opposing side surfaces 8a is completely filled with a reflective potting body 13.

[0075] A passivation layer 7 is arranged in places between the conversion element 14 and the first electrically conductive coating 5a and the second electrically conductive coating 5b.

[0076] An outer surface of the electrically conductive coating 8 is completely encapsulated by the passivation layer 7 and the contact agent 6.

[0077] For example, the optical element is formed of a silicone having a refractive index of n=1.54 and the passivation layer is formed of SiO.sub.2 having a refractive index of n=1.46 or MgF.sub.2 having a refractive index of n=1.38.

[0078] FIG. 2 shows an enlarged section of the optoelectronic component 1 according to FIG. 1 and is marked as a square in FIG. 1. The passivation layer 7 has a penetration 9 so that the contact point 10 of the electrically conductive coating 5 is accessible. Furthermore, the penetration is completely filled with the contact agent 6. The contact agent 6 overmolds the passivation layer 7 and projects beyond it in the lateral direction and in the vertical direction.

[0079] In the method according to the exemplary embodiment of FIGS. 3, 4, 5, 6, 7 and 8, in a first method step according to FIG. 3, the carrier 4 is provided, which comprises the electrically conductive coating 5.

[0080] In a further step, the passivation layer 7 is applied to the carrier in a structured manner, as shown in FIG. 4. The passivation layer 7 is in direct contact with the electrically conductive coating 5 and the carrier plate 4a.

[0081] After application of the passivation layer 7, in a further step as shown in FIG. 5, the radiation-emitting semiconductor chip 2, which comprises the electrical contact 3, is provided and electrically conductively connected to the electrically conductive coating 5 by means of the contact agent 6, preferably by soldering. The contact agent 6 is preferably applied here to the electrical contact 3 before the electrical contact 3 is connected to the electrically conductive coating 5. The contact agent 6 is preferably applied as a comparatively thin layer. Advantageously, comparatively small and easily reproducible quantities of the contact agent 6 can thus be applied to the electrical contact 3.

[0082] An intermediate space between opposing side surfaces 8a of the electrically conductive coating 5, the radiation-emitting semiconductor chip 2 and the carrier 4 is completely filled with the potting body 13 in a further step according to FIG. 6.

[0083] In a further step, according to FIGS. 7 and 8, a conversion element 14 and an optical element 15 are applied over the radiation-emitting semiconductor chip 2 and the passivation layer 7.

[0084] In the method according to the exemplary embodiment of FIGS. 9 and 10, after providing the carrier 4 as shown in FIG. 3, the passivation layer 7 is completely deposited over the carrier 4 (FIG. 9).

[0085] In a further step, the passivation layer 7 is structured by means of a shadow mask 16 and a physical etching process (FIG. 10). The passivation layer 7 is structured in the same way as in the exemplary embodiment of FIG. 13.

[0086] In the method according to the exemplary embodiment of FIGS. 11, 12 and 13, after complete application of the passivation layer, as shown in FIG. 9, a photoresist mask 17, which is for example a positive photoresist, is applied over the passivation layer 7 (FIG. 11).

[0087] According to FIG. 12, the regions of the passivation layer 7 not covered by the positive photoresist are removed by means of a chemical etching process, thus creating the penetration 9 in the passivation layer 7.

[0088] In a further step, the positive photoresist is removed, as shown in FIG. 13.

[0089] In the method according to the exemplary embodiment of FIGS. 14, 15, 16, 17 and 18, after providing the carrier 4 as shown in FIG. 3, the photoresist mask 17, which is for example a negative photoresist, is completely applied over the carrier 4, according to FIG. 14.

[0090] In a further step, according to FIG. 15, a further shadow mask 18 is arranged over the negative photoresist. Further, the negative photoresist is exposed by means of ultraviolet exposure, which is indicated by a plurality of arrows in FIG. 15.

[0091] As shown in FIG. 16, the negative photoresist is structured after exposure in such a way that it is arranged only over the regions where the penetration 9 is to be created.

[0092] Subsequently, the passivation layer 7 is completely applied over the carrier 4 with the electrically conductive coating 5 and the negative photoresist, as shown in FIG. 17. Advantageously, the passivation layer 7 is preferably applied to the negative photoresist by vapor deposition or evaporation so that a side surface of the negative photoresist is not completely covered. Advantageously, the negative photoresist can thus be removed more easily (FIG. 18).

[0093] According to FIG. 18, the negative photoresist is removed in a further step. By means of a chemical etching process, the passivation layer 7, which is arranged over the negative photoresist, is also removed.

[0094] In the method according to the exemplary embodiment of FIGS. 19 and 20, the connection of the radiation-emitting semiconductor chip 2 to the carrier 4 is illustrated.

[0095] The contact agent 6 is applied to the electrical contact 3, as shown in FIG. 19. The contact agent 6 completely covers the electrical contact 3. The radiation-emitting semiconductor chip 2 is heated so that the contact agent 6 is in a viscous form.

[0096] In a further step according to FIG. 20, the contact agent 6 is pressed centrally into the penetration 10 onto the electrically conductive coating 5 during the connection. The contact agent 6 is thereby pressed against the electrically conductive coating 5 with a constant pressure. The pressing causes the contact agent 6 to be partially displaced from the penetration. The contact agent 6 is thus displaced into the regions of the passivation layer 7 surrounding the penetration 10, so that the contact agent 6 overmolds the passivation layer 7 in the region of the penetration 10.

[0097] In the optoelectronic component 1 according to the exemplary embodiment of FIG. 21, the passivation layer 7 is formed as a layer stack comprising a first layer 11a and a second layer 11b, in contrast to the optoelectronic component 1 according to the exemplary embodiment of FIG. 2. For example, the first layer comprises SiO.sub.2 and the second layer comprises Al.sub.2O.sub.3.

[0098] In contrast to the optoelectronic component 1 according to the exemplary embodiment of FIG. 2, the exemplary embodiment of the optoelectronic component 1 according to FIG. 22 has a side surface of the electrically conductive coating 8a that is free of the passivation layer 7. Furthermore, the side surface of the electrically conductive coating 8a that is free of the passivation layer 7 is completely covered by a potting body 13. The potting body 13 comprises, for example, a silicone in which TiO.sub.2 particles are incorporated. The outer surface of the electrically conductive coating 8 facing away from the carrier plate 4a is thus completely encapsulated by the passivation layer 7, the contact agent 6 and the potting body 13.

[0099] In the optoelectronic component 1 according to the exemplary embodiment of FIG. 23, a metal layer 12 is arranged between the contact agent 6 and the electrically conductive coating 5, in contrast to the optoelectronic component 1 according to the exemplary embodiment of FIG. 2. The metal layer 12 is completely arranged in the penetration 9 and completely fills it. The metal layer 12 further terminates flush with the main surface of the passivation layer 7.

[0100] The invention is not limited to the description based on the exemplary embodiments. Rather, the invention comprises any new feature as well as any combination of features, which includes in particular any combination of features in the claims, even if this feature or combination itself is not explicitly stated in the claims or exemplary embodiments.