ILLUMINATION OPTICAL SYSTEM FOR PROJECTION LITHOGRAPHY
20210263421 · 2021-08-26
Inventors
Cpc classification
G03F7/70958
PHYSICS
G03F7/70075
PHYSICS
G02B5/09
PHYSICS
International classification
Abstract
An illumination optical system for projection lithography includes a pupil facet mirror having pupil facets. For at least some of the pupil facets which are designed as selectively reflecting pupil facets, the selectively reflecting pupil facet has a reflective coating for the illumination light, wherein a first coating area on a first part of the selectively reflecting pupil facet has a first reflectivity, a second coating area on a second part of the selectively reflecting pupil facet has a second reflectivity, the first coating area is different from the second coating area, and the first reflectivity is different from the second reflectivity. In combination or as an alternative, for at least some of the pupil facets which are designed as broadbands reflecting pupil facets, the broadband reflecting facets have a broadband reflective coating for the illumination light.
Claims
1. An optical system configured to illuminate an illumination field, the optical system comprising: a pupil facet mirror comprising a plurality of pupil facets, wherein: each pupil facet is configured to guide an illumination light part bundle; at least one of the following holds: I) for each of at least some of the pupil facets, the pupil facet comprises a selectively reflecting pupil facet which comprises a coating that is reflective for the illumination light, wherein a first coating area on a first part of the selectively reflecting pupil facet has a first reflectivity, a second coating area on a second part of the selectively reflecting pupil facet has a second reflectivity, the first coating area is different from the second coating area, and the first reflectivity is different from the second reflectivity; and II) for each of at least some of the pupil facets, the pupil facet comprises a broadband reflecting pupil facet comprising a coating that is broadband reflective for the illumination light; and the optical system is an projection lithography illumination optical system.
2. The optical system of claim 1, wherein I holds.
3. The optical system of claim 2, wherein, for each of at least some of the selectively reflecting pupil facets, a third coating area on a third part of the selectively reflecting pupil facet has a third reflectivity, the third coating area is different from the both the first and second coating areas, and the third reflectivity is different from the second reflectivity.
4. The optical system of claim 5, wherein the third reflectively is the same as the first reflectively.
5. The optical system of claim 2, wherein the reflectivities of two adjacent of the different coating areas merge continuously into each other.
6. The optical system of claim 2, wherein the pupil facets of the pupil facet mirror are configured so that an image of the light source arises at an image location which lies at a distance from the pupil facet along an illumination channel of the illumination light.
7. The optical system of claim 2, further comprising a field facet mirror comprising field facets configured to be superimposingly imaged under contribution of the pupil facets of the pupil facet mirror onto the illumination field.
8. The optical system of claim 2, wherein II holds.
9. The optical system of claim 8, wherein, for each of at least some of the selectively reflecting pupil facets, a third coating area on a third part of the selectively reflecting pupil facet has a third reflectivity, the third coating area is different from the both the first and second coating areas, and the third reflectivity is different from the second reflectivity.
10. The optical system of claim 9, wherein the third reflectively is the same as the first reflectively.
11. The optical system of claim 1, wherein II holds.
12. The optical system of claim 11, wherein the pupil facets of the pupil facet mirror are configured so that an image of the light source arises at an image location which lies at a distance from the pupil facet along an illumination channel of the illumination light.
13. The optical system of claim 12, further comprising a field facet mirror comprising field facets configured to be superimposingly imaged under contribution of the pupil facets of the pupil facet mirror onto the illumination field.
14. The optical system of claim 1, wherein the pupil facets of the pupil facet mirror are configured so that an image of the light source arises at an image location which lies at a distance from the pupil facet along an illumination channel of the illumination light.
15. The optical system of claim 14, further comprising a field facet mirror comprising field facets configured to be superimposingly imaged under contribution of the pupil facets of the pupil facet mirror onto the illumination field.
16. The optical system of claim 1, further comprising a field facet mirror comprising field facets configured to be superimposingly imaged under contribution of the pupil facets of the pupil facet mirror onto the illumination field.
17. An illumination system, comprising: an optical system according to claim 1; and an imaging optical system configured to image an object field into an image field.
18. A projection exposure system, comprising: an illumination system, comprising: an illumination optical system according to claim 1; and an imaging optical system configured to image an object field into an image field; and an illumination light source.
19. A method of using a projection exposure system comprising an illumination optical system and an imaging optical system, the method comprising: using the illumination optical system to illuminate a region of a reticle in an object field of the imaging optical system; and using the imaging optical to project at least a part of the illuminated reticle onto a region of a light-sensitive material in an object field of the imaging optical system.
20. An optical system configured to illuminate an illumination field, the optical system comprising: a pupil facet mirror comprising a plurality of pupil facets; and a field facet mirror comprising field facets, wherein: each pupil facet is configured to guide an illumination light part bundle; I) for each of at least some of the pupil facets, the pupil facet comprises a selectively reflecting pupil facet which comprises a coating that is reflective for the illumination light, wherein a first coating area on a first part of the selectively reflecting pupil facet has a first reflectivity, a second coating area on a second part of the selectively reflecting pupil facet has a second reflectivity, the first coating area is different from the second coating area, and the first reflectivity is different from the second reflectivity; and II) for each of at least some of the pupil facets, the pupil facet comprises a broadband reflecting pupil facet comprising a coating that is broadband reflective for the illumination light; the pupil facets of the pupil facet mirror are configured so that an image of the light source arises at an image location which lies at a distance from the pupil facet along an illumination channel of the illumination light; the field facets configured to be superimposingly imaged under contribution of the pupil facets of the pupil facet mirror onto the illumination field; and the optical system is an projection lithography illumination optical system.
Description
BRIEF DESCRIPTION OF THE FIGURES
[0021] Embodiments of the disclosure will be described in more detail below with the aid of the drawings, in which:
[0022]
[0023]
[0024]
[0025]
[0026]
[0027]
[0028]
[0029]
[0030]
DESCRIPTION OF ILLUSTRATIVE EMBODIMENTS
[0031] A projection exposure system 1 for microlithography is used to produce a microstructured or nanostructured electronic semiconductor structural element. A light source 2 emits EUV radiation used for illumination in the wavelength range, for example between 5 nm and 30 nm. The light source 2 may be a GDPP source (gas discharge produced plasma) or an LPP source (laser produced plasma). A radiation source, based on a synchrotron, can also be used for the light source 2. A person skilled in the art will, for example, find information on a light source of this type in U.S. Pat. No. 6,859,515 B2. EUV illumination light or illumination radiation 3 is used for illumination and imaging within the projection exposure system 1. The EUV illumination light 3, after the light source 2, firstly runs through a collector 4, which is, for example, a nested collector with a multishell structure known from the prior art or, alternatively, an ellipsoidally formed collector. A corresponding collector is known from EP 1 225 481 A. After the collector 4, the EUV illumination light 3 firstly runs through an intermediate focus plane 5, which can be used to separate the EUV illumination light 3 from undesired radiation or particle fractions. After running through the intermediate focus plane, the EUV illumination light 3 firstly impinges on a field facet mirror 6.
[0032] To facilitate the description of positional relationships, a Cartesian global xyz-coordinates system is firstly drawn in the drawing in each case. The x-axis in
[0033] To facilitate the description of positional relationships in individual optical components of the projection exposure system 1, a Cartesian local xyz- or xy-coordinates system is also used in each case in the following Figs. The respective local xy-coordinates, where nothing else is described, span a respective main arrangement plane of the optical component, for example a reflection plane. The x-axes of the global xyz-coordinates system and the local xyz- or xy-coordinates systems run parallel to one another. The respective y-axes of the local xyz- or xy-coordinates systems have an angle to the y-axis of the global xyz-coordinates system, which corresponds to a tilt angle of the respective optical component about the x-axis.
[0034]
[0035] The field facets 7 specify a reflection face of the field facet mirror 6 and are grouped in four columns each with six to eight field facet groups 8a, 8b. The field facet groups 8a in each case have seven field facets 7. The two additional edge-side field facet groups 8b of the two central field facet columns in each case have four field facets 7. Between the two central facet columns and between the third and fourth facet rows, the facet arrangement of the field facet mirror 6 has intermediate spaces 9, in which the field facet mirror 6 is shaded by holding spokes of the collector 4.
[0036] After reflection on the field facet mirror 6, the EUV illumination light 3 divided into beam pencils or part bundles, which are assigned to the individual field facets 7, impinges on a pupil facet mirror 10.
[0037]
[0038] The field facets 7 are imaged in an object plane 16 of the projection exposure system 1 via the pupil facet mirror 10 (cf
[0039] The EUV illumination light 3 is reflected by the reticle 17.
[0040] The projection optical system 19 images the object field 18 in the object plane 16 in an image field 20 in an image plane 21. Arranged in this image plane 21 is a wafer 22, which carries a light-sensitive layer, which is exposed during the projection exposure with the projection exposure system 1. During the projection exposure, both the reticle 17 and the wafer 22 are scanned in a synchronised manner in the y-direction. The projection exposure system 1 is configured as a scanner. The scanning direction is also called the object displacement direction below.
[0041] The field facet mirror 6, the pupil facet mirror 10 and the mirrors 10 to 14 of the transfer optical system 15 are components of an illumination optical system 23 of the projection exposure system 1. Together with the projection optical system 19, the illumination optical system 23 forms an illumination system of the projection exposure system 1.
[0042] The field facet mirror 6 is a first facet mirror of the illumination optical system 23. The field facets 7 are first facets of the illumination optical system 23.
[0043] The pupil facet mirror 10 is a second facet mirror of the illumination optical system 23. The pupil facets 11 are second facets of the illumination optical system 23.
[0044]
[0045] The field facets 7 of the embodiment according to
[0046] For example two of the pupil facets 11 of the pupil facet mirror 10 are assigned to each of the field facets 7 of the respective configuration of the field facet mirror 6 by way of an object field illumination channel, in each case. The pupil facet mirror 10 thus has twice as many pupil facets 11 as the field facet mirror 6 has field facets 7.
[0047] Depending on the configuration of a mechanical tilting ability of the field facets 7, more than two of the pupil facets 11 of the pupil facet mirror 10 may be assigned to one of the field facets 7 by way of respective object field illumination channels. The field facets 7 can then be displaced into a corresponding number of illumination tilting positions.
[0048]
[0049] Along the first illumination channel 26.sub.1, the part bundle 24, after reflection on the field facet 7, is reflected on a first pupil facet 11.sub.1. The pupil facet 11.sub.1 is thus assigned to the field facet 7 by way of the object field illumination channel 26.sub.1. Along the object field illumination channel 26.sub.2, in other words in the other illumination tilt position of the field facet 7, the part bundle 24, after reflection on the field facet 7, is reflected on another pupil facet 11.sub.2 of the pupil facet mirror 10. Only some of the pupil facets 11 of the pupil facet mirror 10 are shown in
[0050]
[0051] The pupil facet 11 according to
[0052]
[0053] The arcuate edge or marginal contour of the illumination light part bundle 24.sub.i on the pupil facet 11 represents a light spot of the illumination light part bundle 24.sub.i.
[0054] Three sub-beams 24.sub.i.sup.1, 24.sub.i.sup.2 and 24.sub.i.sup.3 of the illumination light part bundle 24.sub.i are plotted using dashed lines in the edge or marginal contour of the illumination light part bundle 24.sub.i on the pupil facet 11. The illumination light part bundle 24.sub.i is composed of a multiplicity of such sub-beams 24.sub.i.sup.j. To the extent that the optical parameters of the illumination are known, the illumination light part bundle 24.sub.i can be calculated, for example with the aid of an optical design program.
[0055] The illumination light 3 of these sub-beams 24.sub.i.sup.1 to 24.sub.i.sup.3 proceeds from a left edge or marginal point 7.sup.1, from a central point 7.sup.2 and from a right edge or marginal point 7.sup.3 of the associated field facet 7. In
[0056] The intensity of the marginal sub-beams 24.sub.i.sup.1 and 24.sub.i.sup.3 is smaller than the intensity of the central sub-beam 24.sub.i.sup.2.
[0057]
[0058] The pupil facet 11 in the
[0059]
[0060] The reflectivity ratio R.sub.1/3/R.sub.2 of the reflectivities of these coating areas 27.sub.1, 27.sub.3 on the one hand and 27.sub.2 on the other has at least approximately the inverse value of the intensity ratio I.sub.1/3/I.sub.2 of the marginal sub-beams 24.sub.i.sup.1, 24.sub.i.sup.3 on the one hand and the central sub-beam 24.sub.i.sup.2 on the respective coating areas 27.sub.1, 27.sub.3 and 27.sub.2.
[0061] Such ratio values lead to a homogenization of the intensity of the illumination light 3 seen over the whole area of the illumination light part bundle 24.sub.i. By dividing the reflective coating 27 into multiple coating areas having respectively adapted reflectivities, it is possible to homogenize/compensate an intensity variation throughout the illumination light part bundle 24.sub.i. This can be used as a uniformity correction mechanism to ensure a given intensity homogeneity over the x direction of the object field 18, i.e. to ensure illumination uniformity over the field height x.
[0062] Some or all pupil facets 11 of the pupil facet mirror 10 of
[0063] The arrangement of the different coating areas 27.sub.i on each of the pupil facets 11 depends on the location, orientation and extension of the respective illumination light part bundle 24.sub.i impinging on such pupil facets 11. Such variable arrangement of the coating areas 27.sub.i may be realized by different orientations of the boundaries between such coating areas 27.sub.i and/or may be realized by different extensions and/or by different numbers of such coating areas 27.sub.i. In addition, depending on the respective selectively reflecting pupil facet embodiment, the reflectivities of two adjacent of the different coating areas 27.sub.i, i.e. the reflectivities of coating areas 27.sub.1 and 27.sub.2 or the reflectivities of coating areas 27.sub.2 and 27.sub.3 of the embodiment according to
[0064]
[0065] The broadband pupil facet 11 according to
[0066] The broadband reflective coating 28 may be embodied as a multilayer coating, in other words a multilayer coating with an alternating aperiodic sequence of molybdenum and silicon layers.
[0067] Instead of the multilayer reflection coating, a single layer or a double layer reflection coating with a very narrow angle of incidence tolerance range may also be used. When using multilayer reflection coatings with aperiodic layer stacks, in other words so-called broadband coatings, the angle of incidence tolerance range is increased.
[0068] During the projection exposure, the reticle 17 and the wafer 22, which carries a light-sensitive coating for the EUV illumination light 3, are provided. At least one portion of the reticle 17 is then projected on the wafer 22 with the aid of the projection exposure system 1. Finally, the light-sensitive layer exposed with the EUV illumination light 3 is developed on the wafer 22. The microstructured or nanostructured component, for example a semiconductor chip, is produced in this manner.
[0069] The embodiments described above were described with the aid of an EUV illumination. As an alternative to an EUV illumination, a UV or a VUV illumination can also be used, for example with illumination light with a wavelength of 193 nm.