FREQUENCY MULTIPLEXED RESONATOR INPUT AND/OR OUTPUT FOR A SUPERCONDUCTING DEVICE
20210218367 · 2021-07-15
Inventors
- Andrew J. Berkley (Vancouver, CA)
- Loren J. Swenson (Burnaby, CA)
- Mark H. Volkmann (North Vancouver, CA)
- Jed D. Whittaker (Vancouver, CA)
- Paul I. Bunyk (New Westminster, CA)
- Peter D. Spear (Burnaby, CA)
- Christopher B. Rich (Vancouver, CA)
Cpc classification
G06N10/40
PHYSICS
G06N10/00
PHYSICS
G06N10/20
PHYSICS
H03B2201/02
ELECTRICITY
International classification
H03B15/00
ELECTRICITY
Abstract
A superconducting input and/or output system employs at least one microwave superconducting resonator. The microwave superconducting resonator(s) may be communicatively coupled to a microwave transmission line. Each microwave superconducting resonator may include a first and a second DC SQUID, in series with one another and with an inductance (e.g., inductor), and a capacitance in parallel with the first and second DC SQUIDs and inductance. Respective inductive interfaces are operable to apply flux bias to control the DC SQUIDs. The second DC SQUID may be coupled to a Quantum Flux Parametron (QFP), for example as a final element in a shift register. A superconducting parallel plate capacitor structure and method of fabricating such are also taught.
Claims
1.-46. (canceled)
47. A method of fabricating a superconducting parallel plate capacitor, the method comprising: depositing a first superconductive layer, the first superconductive layer comprising a material that is superconductive in a range of critical temperatures; depositing a first dielectric layer to overlie at least part of the first superconductive layer; depositing a second superconductive layer to overlie at least part of the dielectric layer, the second superconductive layer comprising a material that is superconductive in the range of critical temperatures; removing a portion of the second superconductive layer to form at least one structure from the second superconductive layer and to expose at least part of the first dielectric layer; depositing a second dielectric layer to overlie at least part of the second superconductive layer and at least part of the first dielectric layer; planarizing the second dielectric layer; removing at least part of the second dielectric layer to form a first via exposing at least part of the second superconductive layer; removing at least part of the second dielectric layer and at least part of the first dielectric layer to form a second via exposing at least part of the first superconductive layer; depositing a first region of a third superconductive layer; and depositing a second region of the third superconductive layer, wherein the first region of the third superconductive layer is electrically isolated from the second region of the third superconductive layer, the first region of the third superconductive layer is superconductingly connected to at least part of the second superconductive layer by way of the first via, and the second region of the third superconductive layer is superconductingly connected to at least part of the first superconductive layer by way of the second via.
48. The method of claim 47 wherein the first dielectric layer comprises silicon nitride.
49. The method of claim 48 wherein the second dielectric layer comprises silicon dioxide.
50. The method of claim 47 wherein the second dielectric layer comprises silicon dioxide.
51. The method of claim 47 wherein the third superconductive layer comprises niobium.
52. The method of claim 47 wherein the thickness of the first and the second superconductive layers is in the range of about 100 nm to 400 nm, the thickness of the first dielectric layer is in the range of about 10 nm to 100 nm, and the thickness of the second dielectric layer is in the range of about 100 nm to 300 nm.
53. The method of claim 47 wherein the first and the second superconductive layers comprise niobium.
54. The method of claim 53 wherein the first dielectric layer comprises silicon nitride.
55. The method of claim 53 wherein the second dielectric layer comprises silicon dioxide.
56. The method of claim 53 wherein the third superconductive layer comprises niobium.
57. The method of claim 53 wherein the thickness of the first and the second superconductive layers is in the range of about 100 nm to 400 nm, the thickness of the first dielectric layer is in the range of about 10 nm to 100 nm, and the thickness of the second dielectric layer is in the range of about 100 nm to 300 nm.
58. A method for operating a superconducting input/output device in an input mode to transmit frequency-multiplexed data to a superconducting device, the data comprising a sequence of bits, and the superconducting device communicatively coupled to a superconducting resonator, the method comprising: initializing the superconducting device to a first state; applying a flux bias to the superconducting device via a first flux bias line to generate a preference for a second state; lowering a potential barrier in the superconducting device via a second flux bias line; determining whether a first bit in the sequence of bits is represented by a second state; upon determining the first bit is represented by the second state, sending a tone via a microwave transmission line to the superconducting resonator; and raising the potential barrier in the superconducting device via the second flux bias line.
59. The method of claim 58 wherein initializing the superconducting device includes initializing a Quantum Flux Parametron (QFP).
60. The method of claim 59 wherein initializing the QFP includes initializing a last stage of a shift register communicatively coupled to a Digital-to-Analog Converter (DAC).
61. A method for operating a superconducting input/output device in a readout mode, the method comprising: applying a first flux bias to a first DC superconducting quantum interference device (SQUID) to tune a resonant frequency of a superconducting resonator; and applying a second flux bias to a second DC superconducting quantum interference device (SQUID) to tune a sensitivity of the superconducting resonator.
62. The method of claim 61 further comprising: stimulating an interaction of the superconducting resonator with a Quantum Flux Parametron (QFP) at a nominal resonant frequency; and detecting a shifted resonant frequency of the superconducting resonator resulting from the interaction of the superconducting resonator with the QFP, wherein the shifted resonant frequency is indicative of a state of the QFP.
63. The method of claim 62 wherein applying the first flux bias to the first DC superconducting quantum interference device (SQUID) to tune the resonant frequency of the superconducting resonator, and applying the second flux bias to the second DC superconducting quantum interference device (SQUID) to tune the sensitivity of the superconducting resonator include causing the nominal resonant frequency of the superconducting resonator and the shifted resonant frequency of the superconducting resonator to lie within a first of a plurality of non-overlapping sub-bands, the first of the plurality of non-overlapping sub-bands allocated to the superconducting resonator.
Description
BRIEF DESCRIPTION OF THE SEVERAL VIEWS OF THE DRAWINGS
[0024] In the drawings, identical reference numbers identify similar elements or acts. The sizes and relative positions of elements in the drawings are not necessarily drawn to scale. For example, the shapes of various elements and angles are not necessarily drawn to scale, and some of these elements are arbitrarily enlarged and positioned to improve drawing legibility. Further, the particular shapes of the elements as drawn, are not necessarily intended to convey any information regarding the actual shape of the particular elements, and have been solely selected for ease of recognition in the drawings.
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DETAILED DESCRIPTION
Preamble
[0046] In the following description, some specific details are included to provide a thorough understanding of various disclosed embodiments. One skilled in the relevant art, however, will recognize that embodiments may be practiced without one or more of these specific details, or with other methods, components, materials, etc. In other instances, well-known structures associated with superconductive circuits or resonators have not been shown or described in detail to avoid unnecessarily obscuring descriptions of the embodiments of the present methods. Throughout this specification and the appended claims, the words “element” and “elements” are used to encompass, but are not limited to, all such structures, systems, and devices associated with superconductive circuits and resonators.
[0047] Unless the context requires otherwise, throughout the specification and claims which follow, the word “comprise” is synonymous with “including,” and is inclusive or open-ended (i.e., does not exclude additional, unrecited elements or acts).
[0048] Reference throughout this specification to “one embodiment” “an embodiment”, “another embodiment”, “one example”, “an example”, “another example”, “one implementation”, “another implementation”, or the like means that a particular referent feature, structure, or characteristic described in connection with the embodiment, example, or implementation is included in at least one embodiment, example, or implementation. Thus, the appearances of the phrases “in one embodiment”, “in an embodiment”, “another embodiment” or the like in various places throughout this specification are not necessarily all referring to the same embodiment, example, or implementation. Furthermore, the particular features, structures, or characteristics may be combined in any suitable manner in one or more embodiments, examples, or implementations.
[0049] It should be noted that, as used in this specification and the appended claims, the singular forms “a,” “an,” and “the” include plural referents unless the content clearly dictates otherwise. Thus, for example, reference to a readout system including “a superconducting resonator” includes a single superconducting resonator, or two or more superconducting resonators. It should also be noted that the term “or” is generally employed in its sense including “and/or” unless the content clearly dictates otherwise.
[0050] The headings provided herein are for convenience only and do not interpret the scope or meaning of the embodiments.
Single SQUID Superconducting Resonator
[0051]
[0052] Superconducting resonator 110 further comprises a single SQUID loop 116. SQUID loop 116 is a DC SQUID and comprises a pair of Josephson junctions in parallel with one another in a superconducting loop. SQUID loop 116 enables tuning of the resonance frequency of superconducting resonator 110 by adjusting the SQUID flux bias as explained below.
[0053] The resonance frequency ω of superconducting resonator 110 can be determined by the following formula for an LC circuit:
where C is the value of capacitance 112 and L is the sum of the geometric inductance 114 and the parallel sum of the Josephson inductances from the two Josephson junctions in SQUID loop 116.
[0054] Small fluctuations in capacitance C and/or inductance L result in a fractional frequency perturbation of the resonance frequency as follows:
[0055] In one implementation, superconducting resonator 110 is a distributed resonator. A distributed resonator has capacitance and inductance that cannot be isolated into separate lumped element capacitors and inductors. An advantage of a distributed resonator is that it can be designed to be insensitive to layer thickness. A distributed resonator can also be more tolerant to variations in fabrication. A distributed resonator can exhibit harmonics at every octave which can be a disadvantage in an implementation using more than one octave of bandwidth.
[0056] In other implementations, superconducting resonator 110 is a lumped element design. A lumped element design can advantageously provide a bandwidth greater than one octave, and can reduce or minimize the extent of the resonator's electric field. Since the loss tangent of superconducting resonator 110 can depend on the volume of lossy dielectric exposed to the resonator's electric field, it can be beneficial to use a lumped element design.
[0057] In a lumped element design, capacitance 112 can be implemented using one or more capacitors. The capacitors can be interdigitated capacitors and/or parallel plate capacitors. In one implementation, capacitance 112 is implemented using a parallel plate capacitor. In one example, the capacitance of the parallel plate capacitor is approximately 2 pF.
[0058] The capacitance C of a parallel plate capacitor is given by:
where ∈ is the permittivity of the dielectric separating the plates, A is the area of one of the plates and d is the thickness of the dielectric.
[0059] In practice, area A may be defined by lithography, and fractional errors in area A are expected to be small relative to other errors. The thickness of the dielectric can vary and can contribute significantly to variations in capacitance C and in the resonance frequency ω of a resonator comprising capacitance C. The dependence on variations in dielectric thickness is as follows:
[0060] In a lumped element design, inductance 114 can be implemented using one or more inductors. In one implementation, inductance 114 is implemented using a niobium spiral inductor. In one example, the geometric inductance of the spiral inductor is approximately 1 nH. In another implementation, inductance 114 is implemented using a spiral inductor comprising a high kinetic inductance material such as TiN or WSi.
[0061] Energy stored in the inertia of the superconducting pairs can contribute a kinetic inductance. The total inductance in superconducting resonator 110 is a sum of the geometric inductance, the kinetic inductance, and the inductance of SQUID loop 116.
[0062] Circuit 100 further comprises a transmission line 120, a coupling capacitance 122, and a last or final shift register stage 140. Last shift register stage 140 comprises inductances 142 and 144, SQUID loop 146 and interface 150. Last or final shift register stage 140 may, for example, take the form of a Quantum Flux Parametron (QFP). Last or final shift register stage 140 is the endpoint of a shift register comprising one or more stages. Last or final shift register stage 140 is a stage that can be communicatively coupled to superconducting resonator 110 for the purposes of reading out the state of a superconducting device. In one implementation, superconducting resonator 110 is fed by a flux shift register which, in turn, is fed by a flux qubit.
[0063] The quantum flux parametron (QFP) is a superconducting Josephson junction device similar in structure to a compound rf-SQUID. The name “quantum flux parametron”, however, encompasses both the operation and the structure of the Josephson junction device, not simply structure alone.
[0064] Interface 130 can provide a flux bias to SQUID loop 116 and can be controlled by a flux DAC (not shown in
[0065] A flux DAC is an example of an on-chip control circuitry. Further examples can be found in U.S. Pat. Nos. 7,876,248; 7,843,209; 8,018,244; 8,098,179; 8,169,231; and 8,786,476.
[0066] Superconducting resonator 110 can be coupled to transmission line 120 via coupling capacitance 122 (e.g., a discrete capacitor). Transmission line 120 can optionally be coupled to one or more other superconducting resonators (not shown in
[0067] Superconducting resonator 110 is connected at node 115 to ground.
[0068] Superconducting resonator 110 comprising single SQUID loop 116 does not enable independent tuning of the resonance frequency and the sensitivity of superconducting resonator 110.
[0069]
[0070] The sensitivity is proportional to the slope of the graph shown in
[0071] As mentioned previously, the sensitivity is not independently tunable and can vary significantly with flux bias. This can result in an undesirable tuning-dependent frequency shift for the same flux modulation from the last or final shift register stage coupled to the resonator. It is desirable to have a superconducting resonator in which resonator frequency and sensitivity can be independently adjusted to provide a suitable operating point. For example, independent adjustment of resonant frequency and sensitivity can be used to compensate for frequency shifts arising from variations occurring during fabrication of superconducting circuits such as circuit 100 of
[0072] To guard against variations in the performance of the resonators (for example, caused by variations in fabrication), f.sub.nom.sup.(i) can be selected to lie approximately at the center between f.sub.−1.sup.(i) and f.sub.1.sup.(i+1). Adjacent resonances can be separated by a guard band. In one implementation, adjacent resonators are separated by three times the linewidth of an individual resonance, and B.sub.bin is four times Δf.sup.QFP. As explained below, the flux DACs for superconducting circuit 100 (not shown in
[0073] It may be desirable to achieve a dense packing of the resonances within the bandwidth. This can be achieved by positioning the resonances at regularly spaced frequencies with a determined frequency shift (i.e. sensitivity). Guard bands between resonances can be used to reduce electronic cross-talk between neighboring resonators.
Superconducting resonator with Two SQUID Loops
[0074]
[0075] Components of superconducting circuit 200a labeled with the same numbers as in superconducting circuit 100 of
[0076] Interfaces 230a and 230b can provide flux bias to SQUID loops 216a and 216b respectively. Once a suitable operating point has been found (see below), the flux biases provided by interfaces 230a and 230b can be static. This advantageously allows the circuit to use an array of flux DACs requiring only a few wires to program. The two tunable SQUID loops 216a and 216b do not need an independent analog control line for each superconducting resonator 210a.
[0077]
[0078] SQUID loop 218b is galvanically coupled to a last or final shift register stage comprising DC SQUID 146 and inductance 144. Interfaces 150 and 152 can provide flux bias to DC SQUIDs 146 and 148 respectively. Superconducting resonator 210b is connected at node 215b to ground, for example to the ground 121 of transmission line 120.
[0079] Components of superconducting circuit 200b labeled with the same numbers as in superconducting circuit 100 of
[0080] Interfaces 230a and 230b can provide flux bias to SQUID loops 216a and 216b respectively.
[0081]
[0082] Components of superconducting circuit 200c labeled with the same numbers as in superconducting circuit 100 of
Independent Tuning of Frequency and Sensitivity Using Two SQUID Loops
[0083] As previously discussed, a superconducting resonator comprising a fixed geometric inductance, a capacitance and a single SQUID loop (such as superconducting resonator 110 of
[0084]
[0085] In
[0086] The change in flux bias required to cause a given frequency shift will depend on the location of the operating point on the contour. For example, a horizontal shift from location A on contour 310 to location B on contour 315 requires a smaller change in flux bias than a shift from location C on contour 310 to location D on contour 315. The frequency shift is the same in both cases. The frequency shift per unit flux bias is known as the sensitivity. The sensitivity is greater when the operating point is at location A on contour 310 than at location Con location 310.
[0087] A suitable operating point can be established by the method described in the following paragraphs. The SQUID bias for loop 216a is denoted by Φ.sub.a and the SQUID bias for loop 216b is denoted by Φ.sub.b.
[0088] Firstly, Φ.sub.a is kept at zero while Φ.sub.b is increased from zero until a desired operating frequency is found. The shift register is then operated and the frequency shift between the two possible states (i.e., the flux sensitivity) is measured. The process is then repeated while Φ.sub.b is kept at zero and Φ.sub.a is increased from zero until the desired operating frequency is achieved. The flux sensitivity is again measured. If a desired flux sensitivity lies between the bounds set by the first two measurements described above, then an iterative approach can be used to find the preferred operating point.
[0089] The calibration process to determine the preferred operating point steps through possible values of Φ.sub.b, adjusting Φ.sub.a to achieve the desired frequency and then measuring sensitivity. In one implementation, a binomial search can be used to determine the preferred values of Φ.sub.a and Φ.sub.b. In other implementations, other suitable search methods can be used.
Single SQUID Loop with Tunable Coupler
[0090]
[0091] Superconducting circuit 400 further comprises a tunable coupler 440 in between superconducting resonator 110 and last or final shift register stage (or QFP) 140. Superconducting circuit 400 enables independent tuning of the resonance frequency and the sensitivity to QFP flux, provided the variable loading of superconducting resonator 110 by tunable coupler 440 is taken into account.
[0092] Tunable coupler 440 comprises inductances 442 and 444, and DC SQUID 446. Superconducting circuit 400 further comprises interface 450.
Readout System
[0093]
[0094] Readout system 500 comprises a digital board 520 and a microwave board 530. Digital board 520 comprises a Field Programmable Gate Array (FPGA) 522 (such as a Xilinx Kintex-7 FPGA from Xilinx, Inc. of San Jose, Calif., US), two Digital-to-Analog Converters (DACs) 524a and 524b, and two Analog-to-Digital Converters (ADCs) 526a and 526b. In other embodiments, digital board 520 comprises two FPGAs, one providing output to DACs 524a and 524b, and the other providing output to ADCs 526a and 526b. In one implementation, each of DACs 524a and 524b can be implemented using an Analog Devices 9129 DAC which is a dual-channel 14-bit DAC operating at up to about 5.6 Gsps (Giga samples per second). ADCs 526a and 526b can be implemented using a multi-channel device such as an E2V EV10AQ190 which is a quad-channel 10-bit ADC capable of operating in dual-channel mode at up to about 2.5 Gsps.
[0095] Readout system 500 advantageously enables independent addressing of the two side-bands of the FMR spectrum. The complex received signal is given by:
x(n)=I(n)+jQ(n)
where I(n) is the output of ADC 526a and Q(n) is the output of ADC 526b.
[0096] The FMR spectrum is computed as follows:
for k∈0,1,2,3 . . . N−1. The second term in the argument of the sine function depends on r and can be used to compensate for the phase imbalance between the two mixer channels that results from the analog nature of the mixer.
[0097] Digital board 520 further comprises two loopback lines 529a and 529b, and a sync/clock connection 528. Loopback line 529a connects the output of DAC 524a to the input of ADC 526a. Loopback line 529b connects the output of DAC 524b to the input of ADC 526b.
[0098] Microwave subsystem or microwave board 530 further comprises a loopback line 572. Loopback line 572 connects the input and output to cryogenic subsystem (not shown in
[0099] Loopback lines 529a and 529b on digital board 520, and loopback line 572 on microwave board 530 are optional, and used when required to bypass other elements of readout system 500.
[0100] Readout system 500 further comprises two reconstruction filters 525a and 525b, and two anti-aliasing filters 527a and 527b. Reconstruction filters 525a and 525b are low-pass analog filters that can be used to produce a band-limited analog signal from a digital input. Anti-aliasing filters 527a and 527b are low-pass analog filters that can be used to band-limit a received signal in order to satisfy or approximately satisfy the sampling theorem over a band of interest.
[0101] Microwave board 530 comprises a Voltage-Controlled Oscillator (VCO)/Phase Locked Loop (PLL) 540 which provides a reference microwave signal, mixers 550 and 560, and programmable attenuators 570. Microwave board 530 further comprises amplifiers 562, 564, 566 and 575. Amplifiers 562, 564, 566 and 575 can be used to provide level control on the signal received from superconducting circuit 510. In one implementation, amplifier 566 can be a Miteq AFS4-02000800-30-22P-4, and amplifier 575 can be a Miteq AFD3-040080-28-LN low-noise amplifier. These exemplary amplifiers are available from Miteq Inc., of Hauppauge, N.Y., US. Microwave board 530 further comprises a microwave switch 555 controlled by a signal from FPGA 522 on digital board 520.
[0102] In one implementation, mixers 550 and 560 are complex mixers.
[0103] The illustrated readout system 500 further comprises amplifier 580, attenuators 581 and 582, circulators 583 and 584, and DC blocks 585 and 586. DC blocks 585 and 586 are used as a thermal break on each of the input and output lines to superconducting circuit 510.
[0104] In one implementation, amplifier 580 can be a LNF-3611-28-04000800 low-noise cryogenic amplifier. Amplifier 580 and attenuator 581 can operate at 4 K. Attenuator 582 can operate at 0.6 K. Circulators 583 and 584, and DC blocks 585 and 586, can operate at 8 mK. In one implementation, cryogenic circulators 583 and 584 can each be implemented using a Quinstar CTH0408KC, and DC blocks 585 and 586 can each be implemented using an Aeroflex/Inmet 8039.
[0105] Using 60 resonators and a bandwidth of 2.5 GHz, a data rate of approximately 600 Mbps can be achieved for a shift register stage (SRS) operation time of 25 ns.
Method of Operation of Readout System
[0106]
FMR Technology for Superconducting Qubits
[0107]
[0108] Digital computer 705 comprises CPU 710, user interface elements 711, 712, 713 and 714, disk 715, controller 716, bus 717 and memory 720. Memory 720 comprises modules 721, 723, 727, 731, 737 and 735.
[0109] Quantum computer 750 comprises quantum processor 740, readout control system 760, qubit control system 765 and coupler control system 770. Quantum computer 750 can incorporate FMR technology comprising superconducting resonators (such as superconducting resonator 210a of
[0110]
[0111] All four set of superconducting resonators 810a through 810d, 820a through 820d, 830a through 830d, and 840a through 840d are coupled to a single common transmission line such as line 120 of
[0112]
[0113] Two sets of superconducting resonators 910a through 910h and 940a through 940h are coupled to a first transmission line such as line 120 of
[0114] In the arrangement illustrated in
High Q Superconducting Capacitor
[0115] It can be important for the performance of FMR systems and methods described above for the capacitance in the superconducting resonator (for example, capacitance 112 in resonator 210a of
[0116] A lumped element resonator can be implemented using an interdigitated capacitor or a transmission line resonator, fabricated directly on a crystalline dielectric. The resonator can be designed to reduce capacitor dielectric loss, for example by spreading the fingers of the interdigitated capacitor widely, and by causing the electric field to propagate through the crystalline dielectric rather than be exposed to surface oxides that can dominate the loss.
[0117] A disadvantage of existing techniques to fabricate high Q superconducting capacitors is that those techniques cannot readily be integrated in a heterogeneous, multi-layer fabrication stack while maintaining low loss.
[0118] One approach is to use a distributed microstrip resonator fabricated with amorphous silicon as a deposited dielectric. A disadvantage of this approach is that the capacitance is spread out along the length of the resonator and incorporates a larger volume of dielectric than an equivalent parallel plate capacitor, resulting in higher losses than for a lumped element parallel plate capacitor. Another disadvantage is that the microstrip resonator has a large distributed inductance that needs to be accounted for during design.
[0119] The technology described in this disclosure comprises a superconducting parallel plate capacitor with a thin, high-permittivity dielectric. A parallel-plate design with a thin dielectric can reduce the volume of dielectric for a given capacitance value. It can also provide a reduced capacitor footprint which is an advantage because chip space is at a premium.
[0120] A benefit of a parallel-plate capacitor with a thin dielectric layer is that it can decrease the microwave power required to saturate the loss centers in the dielectric, and consequently can allow high resonator quality factors to be achieved at the operating power typically used with FMR technology. The inventors have observed that decreasing the volume of lossy dielectric can lead to a decrease in the required power to saturate a superconducting resonator such as superconducting resonator 110 of
[0121] Reducing the thickness of the dielectric can be challenging. Furthermore, the capacitance can be sensitive to variations in the thickness of the dielectric. Variations in thickness can be introduced during fabrication, for example during planarization of the dielectric. A method for producing a superconducting parallel plate thin-layer capacitor that can be integrated in a heterogeneous multi-layer planarized fabrication stack with deposited dielectrics is described in the next section.
Thin-Layer Capacitor Integration Process
[0122]
[0123] As illustrated in
[0124] As illustrated in
[0125] As illustrated in
[0126] As illustrated in
[0127] As illustrated in
[0128] As illustrated in
[0129] In one implementation, the thickness of each of the first and second layers of superconducting metal 1010 and 1030, respectively, is about 300 nm, and the thickness of dielectric layer 1020 is about 50 nm.
[0130] An advantage of the method described above is that dielectric layer 1020 can be sufficiently thin that parasitic capacitance in regions of the circuit other than at the capacitors is relatively small.
Frequency Multiplexed Resonator Transceiver
[0131]
[0132] In one implementation, method 1100 is executed by a computing system, such as a hybrid computing system comprising a digital computer and an analog computer. Method 1100 includes acts 1105-1165, though those skilled in the art will appreciate that in alternative implementations certain acts may be omitted and/or additional acts may be added. Those skilled in the art will appreciate that the order of the acts is shown for exemplary purposes only and may change in alternative implementations.
[0133] At 1110, the computing system initializes the QFP devices to a “0” state. At 1120, the computing system applies a flux bias using a flux bias line such as flux bias line 155 of
[0134] At 1145, the computing system determines if there is another resonator. If the computing system determines there is another resonator at 1145, then method 1100 returns to 1140. Method 1100 successively loops around 1140 and 1145 until there are no more resonators to consider, and method 1100 proceeds to 1150.
[0135] At 1150, the computing system fully raises the barrier of each of the QFP devices. At 1160, the quantum processor uses the data, for example through classical QFP logic. Using the data can include transferring the data to a superconducting processor via a shift register, for example. Method 1100 ends at 1165, for example until called or invoked again.
[0136]
[0137] The present technology can load data into a shift register on a quantum processor chip using a frequency multiplexed resonator. The frequency multiplexed resonator readout described above (with reference to
[0138] The present technology can be used to input data to the processor as well as to readout qubit states from the processor. The same lines can be used for both input and readout.
[0139] In some implementations, the device can reduce, or minimize, the impact of microwave currents in the resonator on the attached QFP. To circumvent this, a large SENSE SQUID flux bias can be used to break the symmetry of the device, to allow a microwave flux signal to bias the body of the QFP. In another approach, a portion of the resonator inductance can be used to bias the QFP directly with the resonator current. A benefit of the latter approach is that it can separate the DC flux coupling between the QFP and the SENSE SQUID from the microwave flux coupling between the resonator and the body of the QFP.
[0140] Once the data is loaded, the QFP can be read out immediately. The data can be loaded with up to 100% fidelity. Errors can be corrected by repeating the loading sequence.
[0141]
[0142] Superconducting transceiver circuit 1200 comprises the elements described above in reference to
[0143] In one implementation, data can be loaded into a shift register via the last or final shift register stage 140, and the shift register can be communicatively coupled to a Digital to Analog Converter (DAC) (not shown in
[0144]
[0145] As described with reference to
[0146] Components of superconducting transceiver circuit 1300a labeled with the same numbers as in superconducting circuit 100 of
[0147] As described with reference to
[0148] Superconducting transceiver circuit 1300a comprises the elements of
[0149]
[0150] Superconducting transceiver circuit 1300b comprises the elements of
[0151] In the example embodiment of
[0152] In another exemplary implementation, the resonator is coupled directly to the QFP. The coupling is sufficient to load the QFP deterministically when in a metastable state while not destroying data when in a fully latched state.
[0153] In at least one exemplary implementation, the superconducting device is stimulated after partial annealing (reduction of the barrier) at the resonant frequency.
[0154] In another exemplary implementation, the resonator is stimulated after partial annealing using a fast sweep by a Vector Network Analyzer (VNA). The sweep of the VNA can be centered, or least approximately centered, on the resonance frequency of the resonator. The bandwidth of the sweep can be set to a value that is less than the resonator linewidth, and the sweep can use a handful of points within the resonance. The bandwidth of the sweep can be selected to avoid, or at least reduce, overlap with the linewidth of an adjacent resonance.
[0155] In an example implementation, the sweep can be achieved with a trigger signal output from a DAC card, and sent to the VNA. The waveform can include a sufficiently long delay to allow the sweep to finish before full annealing and readout. For example, the delay can be a few milliseconds.
[0156]
[0157] Superconducting transceiver circuit 1300c comprises the elements of
[0158] Superconducting transceiver circuit 1300c is connected at node 215c to the ground 121 of transmission line 120 via a coupling capacitor 124. In other respects, superconducting transceiver circuit 1300c is the same as or similar to superconducting transceiver circuit 1300b.
[0159] Components of superconducting transceiver circuits 1300a, 1300b, and 1300c of
[0160] In superconducting transceiver circuits 1300a, 1300b, and 1300c, superconducting resonator 210a is connected at node 215a to ground, for example to the ground 121 of transmission line 120. In superconducting transceiver circuit 1300c, superconducting resonator 210a is connected at node 215a to ground via capacitor 124.
[0161]
[0162] Superconducting transceiver circuit 1400 comprises the elements of superconducting circuit 400 of
[0163] Tunable coupler 440 comprises, for example, inductances 442 and 444, and DC SQUID 446.
[0164] Superconducting transceiver circuit 400 further comprises interface 450 operable to apply a flux bias to tunable coupler 440, and thereby to adjust the strength of coupling between SQUID loop 216b and last stage QFP 140.
[0165] In some embodiments, the frequency multiplexed resonator input system described above, which can be used to input data to superconducting devices, is used in combination with the frequency multiplexed resonator readout system also described in the present disclosure (with reference to
[0166] An example embodiment of a frequency multiplexed resonator input/output system is illustrated in
[0167] The various embodiments described above can be combined to provide further embodiments. To the extent that they are not inconsistent with the specific teachings and definitions herein, all of the U.S. patents, U.S. patent application publications, U.S. patent applications, foreign patents, foreign patent applications and non-patent publications referred to in this specification and/or listed in the Application Data Sheet, including but not limited to the following U.S. Provisional Patent Application No. 62/161,780, filed May 14, 2015; U.S. Provisional Patent Application No. 62/288,251, filed Jan. 28, 2016; U.S. Pat. Nos. 8,854,074; and 8,169,231, are incorporated herein by reference, in their entireties. Aspects of the embodiments can be modified, if necessary, to employ systems, circuits and concepts of the various patents, applications and publications to provide yet further embodiments.
[0168] These and other changes can be made to the embodiments in light of the above-detailed description. In general, in the following claims, the terms used should not be construed to limit the claims to the specific embodiments disclosed in the specification and the claims, but should be construed to include all possible embodiments along with the full scope of equivalents to which such claims are entitled. Accordingly, the claims are not limited by the disclosure.