Antireflective glass substrate and method for manufacturing the same

Abstract

A method for manufacturing antireflective glass substrates by ion implantation, comprising selecting a source gas of N.sub.2, or O.sub.2, ionizing the source gas so as to form a mixture of single charge and multicharge ions of N, or O, forming a beam of single charge and multicharge ions of N, or O by accelerating with an acceleration voltage A between 13 kV and 40 kV and setting the ion dosage at a value between 5.56×10.sup.14×A/kV+4.78×10.sup.16 ions/cm.sup.2 and −2.22×10.sup.16×A/kV+1.09×10.sup.18 ions/cm.sup.2, as well as antireflective glass substrates comprising an area treated by ion implantation with a mixture of simple charge and multicharge ions according to this method.

Claims

1. A method for producing an antireflective glass substrate comprising: a) providing a source gas selected from O.sub.2 and/or N.sub.2, b) ionizing the source gas so as to form a mixture of single charge ions and multicharge ions of O and/or N, c) accelerating the mixture of single charge ions and multicharge ions of O and/or N with an acceleration voltage so as to form a beam of single charge ions and multicharge ions of O and/or N wherein an acceleration voltage A is between 13 kV and 40 kV and an ion dosage D is between 5.56×10.sup.14×A/kV+4.78×10.sup.16 ions/cm.sup.2 and −2.22×10.sup.16×A/kV+1.09×10.sup.18 ions/cm.sup.2, d) providing a glass substrate, e) positioning the glass substrate in a trajectory of the beam of single charge and multicharge ions of O and/or N, and f) implanting the single charge and multicharge ions of O and/or N such that a concentration of implanted O and/or N is below 2 atomic % throughout an implanted depth in the glass substrate.

2. The method for producing an antireflective glass substrate according to claim 1, wherein the acceleration voltage is between 15 kV and 35 kV and the ion dosage D is between 7.50×10.sup.14×A/kV+4.88×10.sup.16 ions/cm.sup.2 and −2.05×10.sup.16×A/kV+8.08×10.sup.17 ions/cm.sup.2.

3. The method for producing an antireflective glass substrate according to claim 2, wherein the acceleration voltage is between 16 kV and 25 kV and the ion dosage is between 1.11×10.sup.15×A/kV+4.72×10.sup.16 ions/cm.sup.2 and −2.78×10.sup.16×A/kV+7.94×10.sup.17 ions/cm.sup.2.

4. The method for producing an antireflective glass substrate according to claim 1, wherein the glass substrate provided has the following composition ranges expressed as weight percentage of the total weight of the glass: TABLE-US-00006 SiO.sub.2 35-85%,  Al.sub.2O.sub.3 0-30%, P.sub.2O.sub.5 0-20%, B.sub.2O.sub.3 0-20%, Na.sub.2O 0-25%, CaO 0-20%, MgO 0-20%, K.sub.2O 0-20%, and BaO 0-20%.

5. A method for producing a color antireflective glass substrate according to claim 4, wherein the glass substrate is selected from a soda-lime glass sheet, a borosilicate glass sheet or an aluminosilicate glass sheet.

6. A method for decreasing a reflectance of a glass substrate, comprising: implanting a mixture of single charge and multicharge ions of N and/or O in the glass substrate with an ion dosage and acceleration voltage effective to reduce the reflectance of the glass substrate, wherein the implanting of single charge and multicharge ions of O and/or N result in a concentration of implanted O and/or N is below 2 atomic % throughout an implanted depth in the glass substrate.

7. The method for decreasing the reflectance of a glass substrate according to claim 6, wherein the implanting is effective to reduce the reflectance of the glass substrate to at most 6.5%.

8. The method for decreasing the reflectance of a glass substrate according to claim 7, wherein the implanting is effective to reduce the reflectance of the glass substrate to at most 6%.

9. The method for decreasing the reflectance of a glass substrate according to claim 8, wherein the implanting is effective to reduce the reflectance of the glass substrate to at most 5.5%.

10. The method for decreasing the reflectance of a glass substrate according to claim 6, wherein during the implanting the mixture of single charge and multicharge ions being implanted in the glass substrate has an acceleration voltage A between 13 kV and 40 kV and an ion dosage D between 5.56×10.sup.14×A/kV+4.78×10.sup.16 ions/cm.sup.2 and −2.22×10.sup.16×A/kV+1.09×10.sup.18 ions/cm.sup.2.

11. The method for producing an antireflective glass substrate according to claim 1, wherein the source gas comprises O.sub.2.

12. The method for producing an antireflective glass substrate according to claim 1, wherein the source gas comprises N.sub.2.

13. A method for producing an antireflective glass substrate comprising: a) providing a source gas selected from O.sub.2 and/or N.sub.2, b) ionizing the source gas so as to form a mixture of single charge ions and multicharge ions of O and/or N, c) accelerating the mixture of single charge ions and multicharge ions of O and/or N with an acceleration voltage so as to form a beam of single charge ions and multicharge ions of O and/or N wherein an acceleration voltage A is between 13 kV and 40 kV and an ion dosage D is between 5.56×10.sup.14×A/kV+4.78×10.sup.16 ions/cm.sup.2 and −2.22×10.sup.16×A/kV+1.09×10.sup.18 ions/cm.sup.2, d) providing a glass substrate, and e) positioning the glass substrate in a trajectory of the beam of single charge and multicharge ions of O and/or N, f) implanting a mixture of single charge and multicharge ions of N and/or O in the glass substrate with an ion dosage and acceleration voltage effective to reduce the reflectance of the glass substrate, wherein the implanting is effective to reduce the reflectance of the glass substrate to at most 5.5%.

14. The method for producing an antireflective glass substrate according to claim 13, further comprising displacing the glass substrate through the ion beam at a speed of between 20 and 30 mm/s.

Description

DETAILED DESCRIPTION OF PARTICULAR EMBODIMENTS

(1) The ion implantation examples were prepared according to the various parameters detailed in the tables below using an RCE ion source for generating a beam of single charge and multicharge ions. The ion source used was a Hardion+ RCE ion source from Quertech Ingénierie S.A.

(2) All samples had a size of 10×10 cm.sup.2 and were treated on the entire surface by displacing the glass substrate through the ion beam at a speed between 20 and 30 mm/s.

(3) The temperature of the area of the glass substrate being treated was kept at a temperature less than or equal to the glass transition temperature of the glass substrate.

(4) For all examples the implantation was performed in a vacuum chamber at a pressure of 10.sup.−6 mbar.

(5) Using the RCE ion source, ions of N or O were implanted in 4 mm thick regular clear soda-lime glass and alumino-silicate glass substrates. Before being implanted with the ion implantation method of the present invention the reflectance of the glass substrates was about 8%. The key implantation parameters, and measured reflectance measurements can be found in the tables below.

(6) TABLE-US-00005 TABLE 4 acceler- ation Light refer- Source glass voltage ion dosage reflectance ence gas substrate [kV] [ions/cm.sup.2] [%, D65, 2°] E1 N.sub.2 Sodalime 35 7 × 10.sup.16 6.5 E2 N.sub.2 Sodalime 35 2.5 × 10.sup.17  6.45 E3 N.sub.2 Sodalime 35 1 × 10.sup.17 6.37 E4 N.sub.2 Sodalime 20 5 × 10.sup.17 6.25 E5 N.sub.2 Sodalime 15 7.5 × 10.sup.17  6.23 E6 N.sub.2 Sodalime 20 6 × 10.sup.16 6.14 E7 N.sub.2 Sodalime 25 7 × 10.sup.16 6 E8 N.sub.2 Sodalime 20 6.5 × 10.sup.16  5.98 E9 N.sub.2 Sodalime 35 7.5 × 10.sup.16  5.96 E10 N.sub.2 Sodalime 25 2.5 × 10.sup.17  5.76 E11 N.sub.2 Sodalime 20 7 × 10.sup.16 5.47 E12 N.sub.2 Sodalime 25 7.5 × 10.sup.16  5.25 E13 N.sub.2 Sodalime 25 9 × 10.sup.16 5.15 E14 N.sub.2 Sodalime 25 8 × 10.sup.16 5.05 E15 N.sub.2 Sodalime 20 9 × 10.sup.16 4.99 E16 N.sub.2 Aluminosilicate 25 8 × 10.sup.16 5.87 E17 N.sub.2 Aluminosilicate 25 7 × 10.sup.16 5.67 E18 N.sub.2 Aluminosilicate 20 7 × 10.sup.16 5.35 E19 N.sub.2 Aluminosilicate 20 8 × 10.sup.16 5.13 E20 N.sub.2 Aluminosilicate 25 9 × 10.sup.16 4.93 E21 N.sub.2 Aluminosilicate 20 9 × 10.sup.16 4.66 C1 N.sub.2 Sodalime 25 7.5 × 10.sup.17  7.75 C2 N.sub.2 Sodalime 35 6 × 10.sup.16 6.92 C3 N.sub.2 Sodalime 25 6 × 10.sup.16 6.50 C4 N.sub.2 Aluminosilicate 35 6 × 10.sup.16 7.02

(7) As can be seen on examples E1 to E15, according to the present invention, treatment of the sodalime glass samples with an ion beam comprising a mixture of single charge and multicharge ions of N, accelerated with the same specific acceleration voltage and at such specific dosage, applied to a glass substrate, leads to a reduced reflectance of not more than 6.5%. Comparative sodalime examples C1 to C3 lead to reduced reflectance but the acceleration voltage and ion dosage of these examples is not appropriate to reduce the reflectance to 6.5% or less.

(8) As can be seen on examples E16 to E21, according to the present invention, treatment of the aluminosilicate glass samples with an ion beam comprising a mixture of single charge and multicharge ions of N, accelerated with the same specific acceleration voltage and at such specific dosage, applied to a glass substrate, lead to a reduced reflectance of not more than 6.5%. Comparative aluminosilicate example C4 leads to reduced reflectance but the acceleration voltage and ion dosage of these examples is not appropriate to reduce the reflectance to 6.5% or less.

(9) As can be seen on examples E7 to E15, according to the present invention, treatment of the sodalime glass samples with an ion beam comprising a mixture of single charge and multicharge ions of N, accelerated with the same specific acceleration voltage and at such specific dosage, applied to a glass substrate, lead to a reduced reflectance of not more than 6%.

(10) As can be seen on examples E11 to E15, according to the present invention, treatment of the sodalime glass samples with an ion beam comprising a mixture of single charge and multicharge ions of N, accelerated with the same specific acceleration voltage and at such specific dosage, applied to a glass substrate, lead to a reduced reflectance of not more than 5.5%.

(11) Furthermore XPS measurements were made on the samples E1 to E21 of the present invention and it was found that the atomic concentration of implanted ions of N is below 8 atomic % throughout the implantation depth.