Encapsulation film

Abstract

The present application relates to an encapsulation film, a method for producing the same, an organic electronic device comprising the same, and a method for preparing an organic electronic device using the same, which allows forming a structure capable of blocking moisture or oxygen introduced into an organic electronic device from the outside, and can effectively release heat accumulated inside the organic electronic device and prevent occurrence of bright spots of the organic electronic device.

Claims

1. An encapsulation film for an organic electronic element, the encapsulation film comprising: an encapsulation layer comprising a moisture adsorbent; a metal layer formed on the encapsulation layer and having a thermal conductivity of 50 to 800 W/m.Math.K; a magnetic layer formed on the metal layer and comprising magnetic particles; and a bright spot inhibitor having an adsorption energy for outgases of 0eV or less as calculated by a density functional theory and present in the encapsulation layer or the magnetic layer.

2. The encapsulation film according to claim 1, further comprising a resin layer, wherein the resin layer is formed between the magnetic layer and the metal layer or between the encapsulation layer and the metal layer.

3. The encapsulation film according to claim 2, wherein the resin layer comprises a moisture adsorbent.

4. The encapsulation film according to claim 1, further comprising a protective layer formed on the magnetic layer.

5. The encapsulation film according to claim 4, further comprising an adhesive layer formed between the magnetic layer and the protective layer.

6. The encapsulation film according to claim 1, wherein the metal layer has a thickness in a range of 3 μm to 200 μm.

7. The encapsulation film according to claim 1, wherein the metal layer comprises any one of a metal, a metal oxide, a metal nitride, a metal carbide, a metal oxynitride, a metal oxyboride, or a combination thereof.

8. The encapsulation film according to claim 1, wherein the metal layer comprises any one of iron, chromium, aluminum, copper, nickel, iron oxide, chromium oxide, silicon oxide, aluminum oxide, titanium oxide, indium oxide, tin oxide, indium tin oxide, tantalum oxide, zirconium oxide, niobium oxide, or a combination thereof.

9. The encapsulation film according to claim 1, wherein the magnetic layer comprises a binder resin.

10. The encapsulation film according to claim 9, wherein the binder resin is comprised in an amount of 5 parts by weight to 30 parts by weight relative to 100 parts by weight of the magnetic particles.

11. The encapsulation film according to claim 1, wherein the magnetic particles comprise Cr, Fe, Pt, Mn, Zn, Cu, Co, Sr, Si, Ni, Ba, Cs, K, Ra, Rb, Be, Y, or B, or an alloy thereof, or an oxide thereof.

12. The encapsulation film according to claim 1, wherein the magnetic layer has a thickness in a range of 5 μm to 200 μm.

13. The encapsulation film according to claim 1, wherein the encapsulation layer is formed of a single layer or two or more layers.

14. The encapsulation film according to claim 1, wherein the encapsulation layer comprises an encapsulation resin.

15. The encapsulation film according to claim 1, wherein the moisture adsorbent is a chemically reactive adsorbent.

16. The encapsulation film according to claim 1, wherein the encapsulation layer encapsulates the entire surface of an organic electronic element formed on a substrate.

17. The encapsulation film according to claim 1, wherein the encapsulation layer comprises a first layer contacting an organic electronic element and a second layer not contacting the organic electronic element, and the bright spot inhibitor is included in the second layer or the magnetic layer.

18. The encapsulation film according to claim 1, wherein the bright spot inhibitor has a particle diameter in a range of 10 nm to 30 μm.

19. The encapsulation film according to claim 1, wherein the bright spot inhibitor comprises nickel particles, nickel oxide particles, titanium nitride particles, titanium-based alloy particles of iron-titanium, manganese-based alloy particles of iron-manganese, magnesium-based alloy particles of magnesium-nickel, rare earth-based alloy particles, zeolite particles, silica particles, carbon nanotubes, graphite particles, aluminophosphate molecular sieve particles, or meso silica particles.

20. An organic electronic device comprising a substrate; an organic electronic element formed on the substrate; and the encapsulation film, according to claim 1, for encapsulating the organic electronic element.

21. A method for preparing an organic electronic device, comprising applying the encapsulation film according to claim 1 to a substrate, on which an organic electronic element is formed, so as to cover the organic electronic element.

22. An encapsulation film for an organic electronic element, the encapsulation film, comprising: an encapsulation layer comprising a moisture adsorbent; a metal layer formed on the encapsulation layer and having a thermal conductivity of 50 to 800 W/m.Math.K; a magnetic layer formed on the metal layer and comprising magnetic particles; and a metal layer formed on the magnetic layer and having a thermal conductivity of 50 to 800 W/m.Math.K.

23. An organic electronic device comprising a substrate; an organic electronic element formed on the substrate; and the encapsulation film according to claim 22, for encapsulating the organic electronic element.

Description

BRIEF DESCRIPTION OF THE DRAWINGS

(1) FIG. 1 is a cross-sectional view showing an encapsulation film according to one example of the present application.

(2) FIG. 2 is a cross-sectional view showing an organic electronic device according to one example of the present application.

(3) FIG. 3A is a cross-sectional view showing an exemplary encapsulation film 10 that includes an encapsulation layer 11, a metal layer 13 on the encapsulation layer 11, a resin layer 14 on the metal layer 13, and a magnetic layer 12 on the resin layer 14.

(4) FIG. 3B is a cross-sectional view showing an exemplary encapsulation film 10 that includes an encapsulation layer 11, a resin layer 14 on the encapsulation layer 11, a metal layer 13 on the resin layer 14, and a magnetic layer 12 on the metal layer 13.

(5) FIG. 4 is a cross-sectional view showing an exemplary encapsulation film 10 that includes an encapsulation layer 11, a metal layer 13 on the encapsulation layer 11, a magnetic layer 12 on the metal layer 13, and a metal layer 13 on the magnetic layer 12.

(6) FIG. 5 is a cross-sectional view showing an exemplary encapsulation film 10 that includes an encapsulation layer 11, a metal layer 13 on the encapsulation layer 11, a magnetic layer 12 on the metal layer 13, and a protective layer 15 on the magnetic layer 12.

(7) FIG. 6 is a cross-sectional view showing an exemplary encapsulation film 10 that includes an encapsulation layer 11, a metal layer 13 on the encapsulation layer 11, a magnetic layer 12 on the metal layer 13, an adhesive layer 16 on the magnetic layer 12, and a protective layer 15 on the adhesive layer 16.

(8) FIG. 7 is a cross-sectional view showing an exemplary encapsulation film 10 that includes a first encapsulation layer 111, a second encapsulation layer 112, a metal layer 13 on the second encapsulation layer 112, and a magnetic layer 12 on the metal layer 13.

EXPLANATION OF REFERENCE NUMERALS

(9) 10: encapsulation film

(10) 11: encapsulation layer

(11) 12: magnetic layer

(12) 13: metal layer

(13) 21: substrate

(14) 22: organic electronic element

(15) 14: resin layer

(16) 15: protective layer

(17) 16: adhesive layer

(18) 111: first layer (encapsulation layer)

(19) 112: second layer (encapsulation layer)

BEST MODE

(20) Hereinafter, the present invention will be described in more detail through examples according to the present invention and comparative examples not according to the present invention, but the scope of the present invention is not limited by the following examples.

Example 1

(21) Production of Magnetic Layer

(22) Fe particles (particle diameter about 1 to 10 μm, flake type) as magnetic particles and an acrylic resin as a binder resin were mixed in a weight ratio of 90:10 (magnetic particles:binder resin) to prepare a solution (solid content 50%) diluted with toluene.

(23) The above-prepared solution was applied to the release surface of a releasing PET using a comma coater and dried in a dryer at 130° C. for 3 minutes to form a magnetic layer having a thickness of 30 μm.

(24) Production of Encapsulation Layer

(25) A CaO (average particle diameter 3 μm) solution (solid content 50%) was prepared as a moisture adsorbent. Separately, a solution (solid content 50%), in which 200 g of a butyl rubber resin (BT-20, Sunwoo Chemtech) and 60 g of a DCPD (dicyclopentadiene) petroleum resin (SU5270, Sunwoo Chemtech) were diluted with toluene, was prepared and then the solution was homogenized. 10 g of a photo-curing agent (TMPTA (trimethylolpropane triacrylate), Miwon) and 15 g of a photoinitiator (Irgacure 819, Ciba) were introduced to the homogenized solution, homogenized and then 100 g of the CaO solution was introduced thereto, followed by stirring at high speed for 1 hour to prepare an encapsulation layer solution.

(26) The above-prepared encapsulation layer solution was applied to the release surface of a releasing PET using a comma coater and dried in a dryer at 130° C. for 3 minutes to form an encapsulation layer having a thickness of 50 μm.

(27) Production of Encapsulation Film

(28) The release-treated PET attached to both outsides of the above-produced magnetic layer was peeled off and the magnetic layer was laminated onto the metal layer (aluminum foil, thickness 70 μm) prepared in advance by applying a roll press at 180° C.

(29) The release-treated PET attached to one side of the previously produced encapsulation layer was peeled off and the encapsulation layer was laminated onto the laminated metal layer at 75° C. with a roll-to-roll process to produce an encapsulation film in which the magnetic layer, the metal layer and the encapsulation layer were laminated in this order.

(30) The produced encapsulation film was cut into a square sheet shape with a knife cutter through a wood cutting machine to produce a film for encapsulating an organic electronic element.

Example 2

(31) An encapsulation film was produced in the same method as in Example 1, except that in the production of the magnetic layer, Fe particles (particle diameter about 1 to 10 μm, flake type) as magnetic particles and Ni particles (particle diameter about 300 nm) as a bright spot inhibitor were mixed in a weight ratio of 9:1, and an acrylic resin as a binder resin was mixed with the magnetic particles and the bright spot inhibitor in a weight ratio of 90:10 (magnetic particles+bright spot inhibitor:binder resin) to prepare a solution (solid content 50%) diluted with toluene, followed by forming the magnetic layer.

Example 3

(32) An encapsulation film was produced in the same method as in Example 2, except that the magnetic particles and the bright spot inhibitor were mixed in a weight ratio of 6:4.

Experimental Example 1—Evaluation of Organic Electronic Device Encapsulation

(33) After an organic electronic element was deposited on a glass substrate, the encapsulation films produced in the examples were each laminated onto the element using a vacuum laminator under the conditions of 50° C., a vacuum degree of 50 mTorr and 0.4 MPa to produce an organic electronic panel.

(34) The above-produced panel is placed in a constant temperature and humidity chamber at 85° C. and 85%, and stored. After 1000 hours, it is taken out and turned on to check whether the bright spots are generated or whether the element shrinks. It was classified as when bright spots and element shrinkage did not occur, as 0 when bright spots and element shrinkage occurred very little, and as X when bright spot defects occurred and element shrinkage occurred.

Experimental Example 2—Calculation of Adsorption Energy

(35) The adsorption energy of the bright spot inhibitors used in the examples for outgases was calculated through electronic structure calculation based on the density functional theory. After making a two-dimensional slab structure in which the closest packed filling surface of a bright spot inhibitor having a crystalline structure is exposed on the surface and then performing structure optimization, and performing the structure optimization for a structure that the bright spot-causing molecules are adsorbed on the surface of this vacuum state, the value obtained by subtracting the total energy of the bright spot-causing molecules from the total energy difference of these two systems was defined as the adsorption energy. For the total energy calculation about each system, a revised-PBE function as a function of GGA (generalized gradient approximation) series was used as exchange-correlation to simulate the interaction between electrons and electrons, the used cutoff of the electron kinetic energy was 500 eV and only the gamma point corresponding to the origin of the reciprocal space was included and calculated. A conjugate gradient method was used to optimize the atomic structure of each system and iterative calculation was performed until the interatomic force was 0.01 eV/Å or less. A series of calculation was performed through VASP as a commercially available code.

(36) TABLE-US-00001 TABLE 1 Encapsulation Adsorption Energy (eV) Evaluation NH.sub.3 H Example 1 O — — Example 2 ⊚ −0.54 −2.624 Example 3 ⊚ −0.54 −2.624