Chip-shaped electronic component

Abstract

One chip-shaped electronic component 100 of the present invention has a substrate 10, and a termination electrode layer 80 formed on an end face of the substrate 10. The termination electrode layer 80 is made of a mixed material that contains an electrically-conductive substance (a′) (containing carbon (a) as one type of the electrically-conductive substance (a′)), whisker-like particles (b) covered with the electrically-conductive substance (a′), flake-like particles (c) having electroconductivity, and a tetrafunctional hydroxyphenyl type epoxy resin (d) having a molecular weight of 450 or more and less than 800. In addition, a mass ratio of the flake-like particles (c) is 3/7 or more and 9 or less when the whisker-like particles (b) is assumed to be 1.

Claims

1. A chip-shaped electronic component comprising: a substrate; and a termination electrode layer on an end face of the substrate, wherein the termination electrode layer is made of a mixed material that contains: an electrically-conductive substance (a′) containing carbon (a) as one type of the electrically-conductive substance (a′), whisker-like particles (b) covered with the electrically-conductive substance (a′), flake-like particles (c) having electroconductivity, and a tetrafunctional hydroxyphenyl type epoxy resin (d) having a molecular weight of 450 or more and less than 800, and a mass ratio of the flake-like particles (c) is 3/7 or more and 9 or less when the whisker-like particles (b) is assumed to be 1; wherein when the termination electrode layer is observed by scanning electron microscopy (SEM) at a magnification of 1500, the termination electrode layer includes a region in which an area fraction of a section where the whisker-like particles (b) exposed on an outermost surface of the termination electrode layer and the flake-like particles (c) exposed on the outermost surface of the termination electrode layer is 30% or more seen in a 0.075 mm×0.057 mm randomly selected area of the termination electrode layer.

2. A chip-shaped electronic component comprising: a substrate; and a termination electrode layer on an end face of the substrate, wherein the termination electrode layer is made of a mixed material that contains: an electrically-conductive substance (a′) containing carbon (a) as one type of the electrically-conductive substance (a′), whisker-like particles (b) covered with the electrically-conductive substance (a′), flake-like particles (c) having electroconductivity, and a tetrafunctional hydroxyphenyl type epoxy resin (d) having a molecular weight of 450 or more and less than 800, and a mass ratio of the flake-like particles (c) is 3/7 or more and 9 or less when the whisker-like particles (b) is assumed to be 1; wherein when the termination electrode layer is observed by cross-sectional scanning electron microscopy (SEM) at a magnification of 1000, the termination electrode layer includes a region in which a spacing between contact points of the whisker-like particles (b) exposed on an outermost surface of the termination electrode layer or the flake-like particles (c) exposed on the outermost surface of the termination electrode layer and an electroplated layer included in the chip-shaped electronic component is 10 μm or less seen in a 0.125 mm×0.034 mm randomly selected area of the termination electrode layer.

3. A chip-shaped electronic component comprising: a substrate; and a termination electrode layer on an end face of the substrate, wherein the termination electrode layer is made of a mixed material that contains: an electrically-conductive substance (a′) containing carbon (a) as one type of the electrically-conductive substance (a′), whisker-like particles (b) covered with the electrically-conductive substance (a′), flake-like particles (c) having electroconductivity, and a tetrafunctional hydroxyphenyl type epoxy resin (d) having a molecular weight of 450 or more and less than 800, and a mass ratio of the flake-like particles (c) is 3/7 or more and 9 or less when the whisker-like particles (b) is assumed to be 1; wherein a volume fraction of the whisker-like particles (b) and the flake-like particles (c) in the termination electrode layer is 7% or more and 25% or less.

4. A chip-shaped electronic component comprising: a substrate; and a termination electrode layer on an end face of the substrate, wherein the termination electrode layer is made of a mixed material that contains: an electrically-conductive substance (a′) containing carbon (a) as one type of the electrically-conductive substance (a′), whisker-like particles (b) covered with the electrically-conductive substance (a′), flake-like particles (c) having electroconductivity, and a tetrafunctional hydroxyphenyl type epoxy resin (d) having a molecular weight of 450 or more and less than 800, and a mass ratio of the flake-like particles (c) is 3/7 or more and 9 or less when the whisker-like particles (b) is assumed to be 1; wherein the termination electrode layer has a storage modulus of 10.sup.7 Pa or more and 10.sup.10 Pa or less in a temperature range from −55° C. or more and 155° C. or less.

5. The chip-shaped electronic component according to claim 4, wherein the electrically-conductive substance (a′) contains at least one substance selected from the group consisting of Ag, Cu, Ni, Sn, Au, Pt, solder, and the carbon (a).

6. The chip-shaped electronic component according to claim 5, further comprising a curing agent (e) and a curing catalyst (f).

7. The chip-shaped electronic component according to claim 5, wherein when the termination electrode layer is observed by scanning electron microscopy (SEM) at a magnification of 1500, the termination electrode layer includes a region in which an area fraction of a section where the whisker-like particles (b) exposed on an outermost surface of the termination electrode layer and the flake-like particles (c) exposed on the outermost surface of the termination electrode layer is 30% or more seen in a 0.075 mm×0.057 mm randomly selected area of the termination electrode layer.

8. The chip-shaped electronic component according to claim 5, wherein when the termination electrode layer is observed by cross-sectional scanning electron microscopy (SEM) at a magnification of 1000, the termination electrode layer includes a region in which a spacing between contact points of the whisker-like particles (b) exposed on an outermost surface of the termination electrode layer or the flake-like particles (c) exposed on the outermost surface of the termination electrode layer and an electroplated layer included in the chip-shaped electronic component is 10 μm or less seen in a 0.125 mm×0.034 mm randomly selected area of the termination electrode layer.

9. The chip-shaped electronic component according to claim 5, wherein a volume fraction of the whisker-like particles (b) and the flake-like particles (c) in the termination electrode layer is 7% or more and 25% or less.

10. The chip-shaped electronic component according to claim 5, wherein the termination electrode layer has a 1 mass % loss temperature, in resin equivalent, of 250° C. or more.

11. The chip-shaped electronic component according to claim 4, further comprising a curing agent (e) and a curing catalyst (f).

12. The chip-shaped electronic component according to claim 11, wherein when the termination electrode layer is observed by scanning electron microscopy (SEM) at a magnification of 1500, the termination electrode layer includes a region in which an area fraction of a section where the whisker-like particles (b) exposed on an outermost surface of the termination electrode layer and the flake-like particles (c) exposed on the outermost surface of the termination electrode layer is 30% or more seen in a 0.075 mm×0.057 mm randomly selected area of the termination electrode layer.

13. The chip-shaped electronic component according to claim 11, wherein when the termination electrode layer is observed by cross-sectional scanning electron microscopy (SEM) at a magnification of 1000, the termination electrode layer includes a region in which a spacing between contact points of the whisker-like particles (b) exposed on an outermost surface of the termination electrode layer or the flake-like particles (c) exposed on the outermost surface of the termination electrode layer and an electroplated layer included in the chip-shaped electronic component is 10 μm or less seen in a 0.125 mm×0.034 mm randomly selected area of the termination electrode layer.

14. The chip-shaped electronic component according to claim 11, wherein a volume fraction of the whisker-like particles (b) and the flake-like particles (c) in the termination electrode layer is 7% or more and 25% or less.

15. The chip-shaped electronic component according to claim 11, wherein the termination electrode layer has a 1 mass % loss temperature, in resin equivalent, of 250° C. or more.

16. The chip-shaped electronic component according to claim 4, wherein the curing agent (e) is an imidazole-based curing agent excluding those having a triazine skeleton, the imidazole based curing agent having an activation start temperature of 110° C. or more, and/or dicyandiamide.

Description

BRIEF DESCRIPTION OF THE DRAWINGS

(1) FIG. 1 is a schematic cross-sectional view illustrating a chip resistor 100 of this embodiment.

(2) FIG. 2A is an SEM image of a termination electrode layer (a layer made of a mixed material) of a first embodiment, seen in a 0.075 mm×0.057 mm randomly selected area of the termination electrode layer in a plan view, when the termination electrode layer is observed at a magnification of 1500.

(3) FIG. 2B is an SEM image of the termination electrode layer (a layer made of a mixed material) of Comparative Example 6, seen in a 0.075 mm×0.057 mm randomly selected area of the termination electrode layer in a plan view, when the termination electrode layer is observed at a magnification of 1500.

(4) FIG. 3 is a cross-sectional SEM image of the termination electrode layer (a layer made of a mixed material) of the first embodiment, seen in a 0.125 mm×0.034 mm randomly selected area of the termination electrode layer, when the termination electrode layer is observed at a magnification of 1000.

(5) FIG. 4 is a graph illustrating a (cohesive) fracture frequency at an interface between an electroplated layer or a ceramic substrate and the termination electrode layer, or inside the termination electrode layer in the chip resistor, plotted versus total area fraction of whisker-like particles and flake-like particles that expose on the outermost surface of the termination electrode layer of the first embodiment.

(6) FIG. 5 is a schematic cross-sectional view illustrating a conventional chip resistor.

DESCRIPTION OF REFERENCE SIGNS

(7) 10, 910: Substrate 20, 920: Metal electrode layer 30, 930: Nickel plated layer 40, 940: Tin plated layer 50, 950: Resistive element 60, 960: Glass material layer 70, 970: Protective film 80, 980: Termination electrode layer 82a, 82b: Whisker-like particle 84a, 84b: Flake-like particle 100, 900: Chip resistor

EMBODIMENT OF THE INVENTION

(8) Paragraphs below will detail a chip resistor 100 as one example of the chip-shaped electronic component according to an embodiment of the present invention, and an exemplary termination electrode layer 80 that composes a part of the chip resistor 100 and is made of a mixed material.

First Embodiment

(9) FIG. 1 is a schematic cross-sectional view illustrating a chip resistor 100 of this embodiment. The chip resistor 100 has a resistive element 50 formed on an alumina substrate 10, a glass material layer 60 that covers the resistive element 50, and a protective film 70 that covers the glass material layer 60. The chip resistor 100 additionally has a metal electrode layer 20 that is formed partially on a top face and partially on a bottom face of the alumina substrate 10 and is electrically connected to the resistive element 50, and a nickel plated layer 30 and a tin plated layer 40 that are electrically and mechanically bonded to the metal electrode layer 20. On the end face of the alumina substrate 10, formed is a termination electrode layer 80 that is electrically connected to the metal electrode layer 20. On the end faces of the alumina substrate 10, the nickel plated layer and the tin plated layer cover the termination electrode layer 80.

(10) The termination electrode layer 80 of this embodiment is made of a mixed material that contains an electrically-conductive substance (a′) (containing carbon (a) as one type of the electrically-conductive substance (a′)), whisker-like particles (b) covered with the electrically-conductive substance (a′), flake-like particles (c) having electroconductivity, and a tetrafunctional hydroxyphenyl type epoxy resin (d), having a molecular weight of 450 or more and less than 800.

(11) In addition, in the chip resistor 100 of this embodiment, the mass ratio of the flake-like particles (c) is 3/7 or more and 9 or less when the whisker-like particles (b) is assumed to be 1.

(12) Next, the mixed material used for forming the termination electrode layer 80 will further be detailed.

(13) The electrically-conductive substance (a′), as one of the constituents composing the mixed material of this embodiment, contains carbon (a). The carbon (a) is particularly a carbon powder having a surface area per gram of 800 m.sup.2 or more. The electrically-conductive substance (a′) may further contain, besides the carbon (a), at least one substance selected from the group consisting of Ag, Cu, Ni, Sn, Au, Pt and solder (representatively, but not restrictively, Sn-3Ag-0.5Cu alloy).

(14) The whisker-like particles (b), as another constituent of the mixed material, covered with the electrically-conductive substance (a′) is representatively a whisker-like inorganic filler (potassium titanate, for example) covered with a film of silver as an exemplary electrically-conductive substance. The inorganic filler, when being potassium titanate, typically has an average fiber diameter of 0.3 to 0.6 μm, an average fiber length of 5 to 30 μm, and an aspect ratio of 8.3 to 100. Moreover, whisker-like potassium titanate, covered with a film of any other electrically-conductive substance capable of demonstrating the effect of this embodiment, may be another employable aspect.

(15) The flake-like particles (c) having electroconductivity, which are another constituent of the mixed material, are representatively a product obtained by subjecting spherical silver particles to plastic working using a ball mill or the like. While the shape and size of the flake-like particles (c) are not specifically limited, the flake-like particles (c) typically have an aspect ratio of 2 or more. The flake-like particles (c) may occasionally be referred to as tabular particles or scaly particles. As a substitute for the aforementioned silver particles, employable is a powder of silver alloy, copper alloy, and/or nickel alloy. Additionally employable is a flake-like electrically-conductive powder made of a silver, copper, nickel, or copper alloy core whose surface is coated with silver by plating or the like.

(16) The tetrafunctional hydroxyphenyl type epoxy resin (d), having a molecular weight of 450 or more and less than 800, which is another mixed material, is representatively an epoxy resin represented by the chemical formula below. The epoxy resin (d) of this embodiment, based on its small molecular weight, can form a rigid, flexible, and highly durable network polymer, when combined with an appropriate crosslinkable curing agent. As a consequence, the epoxy resin (d) will have thermal stability and adequate deformability while preventing inter-molecular slippage, making it possible to play a role of a base resin that excels in durability against stress relaxation or fatigue fracture, and in thermal decomposition resistance. Moreover, the epoxy resin (d) may demonstrate adequate rigidity and adequate flexibility also under a low-temperature condition of −50° C. or less, or under a high-temperature condition more than 150° C.

(17) ##STR00001##

(18) The mixed material can demonstrate suitable performance by further containing a curing agent (e) and a curing catalyst (f). Representative examples of the curing agent (e) include an imidazole-based curing agent (excluding those having a triazine skeleton) with an activation start temperature of 110° C. or more, and/or dicyandiamide. Representative examples of the imidazole-based curing agent include phenyl imidazole and cyanoimidazole. Examples of the curing catalyst (f) include tin (Sn)-based curing catalysts represented by dioctyltin dilaurate and stannous 2-ethylhexanoate, and phosphorus (P)-based curing catalysts represented by triphenylphosphine and tri(p-tolyl)phosphine. The imidazole-based curing agent and dicyandiamide, when allowed to coexist, demonstrate an effect of mutually accelerating the curing.

(19) One suitable aspect is such that the mixed material further contains an adhesiveness enhancing agent such as a silane coupling agent, benzotriazole, and/or various metal chelating substances, for the purpose of enhancing adhesiveness between the substrate or the metal with the resin. Another suitable aspect is such that the mixed material further contains any of various inorganic fine particles, for the purpose of controlling the viscoelastic characteristic of a pasty substance so as to improve coatability. Still another suitable aspect is such that the mixed material further contains an appropriate amount of a leveling agent such as a surfactant, for the purpose of improving smoothness of the surface of the termination electrode layer 80.

(20) The mixed material that contains the aforementioned individual components is used in the form of a uniform pasty dispersion, after being subjected to a known kneading step using a kneader mixer, a planetary mixer, and/or a triple roll mill. The pasty mixed material may be applied by coating or printing, using any of known coating/transfer techniques such as dip transfer, roller transfer, stamp transfer, and screen printing, onto the end faces of the alumina substrate 10 so as to establish electrical connection with the metal electrode layer 20 possessed by the alumina substrate 10. The termination electrode layer 80 as illustrated in FIG. 1 is thus formed.

(21) Thickness of the termination electrode layer 80, at the central part of the end face of the substrate in this case, is not specifically limited. The thickness on a representative 3216 size alumina substrate is about 25 μm to about 30 μm at maximum, meanwhile the thickness on a representative 1005 size alumina substrate is about 15 μm to about 20 μm at maximum. Hence, the termination electrode layer 80 is formed at least on the end faces of the alumina substrate 10. Any of known forming methods is employable, in order to form the nickel plated layer 30 and the tin plated layer 40 that are provided so as to be electrically and mechanically bonded with the metal electrode layer 20 which is in electrical connection with the resistive element 50, and so as to cover the metal electrode layer 20 or the termination electrode layer 80.

(22) The mixed material that contains the aforementioned individual components is applied by coating or printing on the end faces of the alumina substrate 10 so as to be electrically connected to the metal electrode layer 20 possessed by the alumina substrate 10. The termination electrode layer 80 as illustrated in FIG. 1 is thus formed. Hence, the termination electrode layer 80 is formed at least on the end faces of the alumina substrate 10. Any of known forming methods is employable, in order to form the nickel plated layer 30 and the tin plated layer 40 that are provided so as to be electrically and mechanically bonded with the metal electrode layer 20 which is in electrical connection with the resistive element 50, and so as to cover the metal electrode layer 20 or the termination electrode layer 80.

(23) By employing such structure of the chip resistor 100 of this embodiment, it becomes possible to realize a chip resistor having the resin electrode layer (termination electrode layer 80) having high reliability even under harsh environments. More specifically, the chip resistor 100 of this embodiment can suppress or prevent generation of voids and/or delamination between the termination electrode layer 80 and the electroplated layer (for example, the nickel plated layer 30) or the alumina substrate 10 caused by load applied during solder bonding processes or heat cycle load, with a high degree of certainty. In addition, the chip resistor 100 of this embodiment can have high adhesive force between the termination electrode layer 80 and the electroplated layer (for example, the nickel plated layer 30) or the alumina substrate 10, even under high temperatures.

(24) While the termination electrode layer 80 in this embodiment is covered with the nickel plated layer 30 and the tin plated layer 40, the electrically-conductive layer that covers the termination electrode layer 80 is not limited to the nickel plated layer 30 and the tin plated layer 40. For example, the electrically-conductive layer that covers the termination electrode layer 80 may be a single layer or a multi-layer. Another employable aspect is such that a material composing the single layer or the multi-layer is at least one metal selected from copper (Cu), chromium (Cr), lead (Pb), zinc (Zn), indium (In), bismuth (Bi), gold (Au), silver (Ag), palladium (Pd), and platinum (Pt), or an alloy of these metals. A method for forming the electrically-conductive layer employable here may be any of known methods.

(25) The present inventors found that, as a result of mixing of the whisker-like particles and the flake-like particles, which are the electrically-conductive fine particles, in an appropriate ratio represented by the aforementioned numerical range, the termination electrode layer 80 can exhibit high bondability to the overlying metal plated layer, while retaining electroconductivity. Such high bondability is obtainable presumably due to an adequate volume fraction of the resin component contained in the termination electrode layer 80, and an adequate degree of exposure of the electrically-conductive components to the outermost surface of the termination electrode layer 80. As a consequence, adequate rigidity and adequate flexibility of the termination electrode layer 80 may be achieved with a high degree of certainty. The shape of the electrically-conductive substance (a′) is not specifically limited, so long as the technical effect obtainable by the appropriate mixing of the whisker-like particles and the flake-like particles will not be inhibited, and particles having, for example, a spherical shape may be used.

(26) Such adequate rigidity of the termination electrode layer 80 is considered to contribute to improved mechanical durability of the termination electrode layer 80, against impact force of collision or fall, or repetitive load of vibration or the like, or against thermal stress when the termination electrode layer 80 is placed under thermal load. Meanwhile, such adequate flexibility of the termination electrode layer 80 is considered to make the termination electrode layer 80 capable of absorbing thermal strain that may be produced under repetitive exposure to both of a low-temperature state and high a high-temperature state, and of preventing a crack that may occur at around the termination electrode layer 80 from propagating into the termination electrode layer 80, and is therefore considered to contribute to improved durability of the chip-shaped electronic component (representatively, the chip resistor 100) as a whole. In addition, the mass ratio of the flake-like particles (c) is preferably controlled to 1 or more and 9 or less when the whisker-like particles (b) is assumed to be 1, from the viewpoint of preventing voids from being generated inside the termination electrode layer 80, and of achieving adequate rigidity and adequate flexibility of the termination electrode layer 80 with a higher degree of certainty, while retaining electroconductivity. In an additional viewpoint of coatability that makes the termination electrode layer 80 widely applicable to various methods for forming, the mass ratio of the flake-like particles (c) is more preferably 1 or more and 5 or less when the whisker-like particles (b) is assumed to be 1.

(27) As a result of creation of a state in which the whisker-like particles (b) and/or the flake-like particles (c) are allowed to protrude or expose from the outermost surface of the termination electrode layer 80 (a layer made of the mixed material) so as to electrically connect the electroplated layer (for example, the nickel plated layer 30) possessed by the chip resistor 100 with the termination electrode layer 80, the termination electrode layer 80 is considered to demonstrate electroconductivity with a high degree of certainty, while preventing delamination between the termination electrode layer 80 and the nickel plated layer 30 or fracture even under harsh environments. The present inventors reached an idea that the aforementioned effect of this embodiment would be demonstrated with a higher degree of certainty, if the state of such protrusion or exposure could adequately be controlled.

(28) More specifically, the present inventors minutely analyzed a micro-area of the termination electrode layer 80 by SEM (scanning electron microscopy).

(29) FIG. 2A is an SEM image of the termination electrode layer 80 (a layer made of the mixed material) of this embodiment, seen in a 0.075 mm×0.057 mm randomly selected area of the termination electrode layer 80 in a plan view, when the termination electrode layer 80 is observed at a magnification of 1500. For reference, FIG. 2B shows an SEM image of the termination electrode layer (a layer made of a mixed material) of later-described Comparative Example 6, seen in a 0.075 mm×0.057 mm randomly selected area of the termination electrode layer in a plan view, when the termination electrode layer is observed at a magnification of 1500.

(30) FIG. 3 is a cross-sectional SEM image of the termination electrode layer 80 (a layer made of the mixed material) of this embodiment, seen in a 0.125 mm×0.034 mm randomly selected area of the termination electrode layer 80, when the termination electrode layer 80 is observed at a magnification of 1000. FIG. 4 is a graph illustrating a (cohesive) fracture frequency at the interface between the electroplated layer or the ceramic substrate and the termination electrode layer, or inside the termination electrode layer in the chip resistor, plotted versus total area fraction of the whisker-like particles and the flake-like particles that expose on the outermost surface of the termination electrode layer.

(31) From the results of researches and analyses regarding the micro-areas of the termination electrode layer 80 representatively illustrated in FIGS. 2A and 3, and from the results illustrated in FIG. 4, it was found that the effect of this embodiment is obtainable with a higher degree of certainty, when at least one of condition (X) or (Y) below is satisfied.

(32) (X) When the termination electrode layer 80 (a layer made of the mixed material) of this embodiment is observed by SEM at a magnification of 1500, the termination electrode layer 80 includes a region in which the area fraction of a section where whisker-like particles (b) 82a and flake-like particles (c) 84a expose on an outermost surface of the termination electrode layer 80 is 30% or more seen in a 0.075 mm×0.057 mm randomly selected area of the termination electrode layer 80. From the viewpoint of suppressing or preventing the fracture with a higher degree of certainty, the area fraction is preferably 31.5% or more, and from the viewpoint of avoiding the fracture with an even higher degree of certainty, the termination electrode layer 80 includes a region in which the area fraction is 33.0% or more.

(33) (Y) When the termination electrode layer 80 (a layer made of the mixed material) of this embodiment is observed by cross-sectional SEM at a magnification of 1000, the termination electrode layer 80 includes a region in which a spacing between contact points of the whisker-like particles (b) 82a or the flake-like particles (c) 84a exposed on the outermost surface of the termination electrode layer 80 and the nickel plated layer 30 included in the chip resistor 100 is 10 μm or less seen in a 0.125 mm×0.034 mm randomly selected area of the termination electrode layer 80.

(34) Meanwhile, in a comparative example illustrated in FIG. 2B, the whisker-like particles (b) 82b and the flake-like particles (c) 84b are distributed sparsely, showing an obvious difference from FIG. 2A.

(35) The present inventors then estimated the area fraction of the whisker-like particles 82a and the flake-like particles 82b on the aforementioned cross-sectional SEM image, and went into investigations and analyses regarding a relation of the area fraction with electroconductivity, adhesion strength and the like. It was consequently found out that one suitable aspect relates to a case where the termination electrode layer 80 (a layer made of the mixed material) of this embodiment has a volume fraction of the whisker-like particles (b) 82a and the flake-like particles (c) 84a of 7% or more and 25% or less. More specifically, with the volume fraction controlled within such numerical range, the termination electrode layer 80 will be able to contain an adequate volume fraction of resin component, and will allow the electrically-conductive component to adequately expose on the outermost surface of the termination electrode layer 80. The aforementioned range of volume fraction was therefore found to successfully enhance the adhesiveness/adhesion strength with the substrate and the metal electrode layer (including the electroplated layer) with a higher degree of certainty, while keeping high electroconductivity.

(36) <Performance Evaluation of Chip Resistor and Termination Electrode Layer>

(37) Various performance evaluations and the results of the chip resistor 100 and the termination electrode layer 80 of this embodiment will be described below.

(38) 1. Storage Modulus of Termination Electrode Layer

(39) The present inventors evaluated temperature dependence of storage modulus (Pa) of samples of the termination electrode layer 80 (a layer made of the mixed material) of this embodiment, and samples of the mixed material of comparative examples, using a dynamic viscoelasticity meter (model: DMS6100, from Seiko Instruments, Inc.). Results of evaluation of storage modulus are shown in Tables 1A, 1B and 2.

(40) From analysis of the results of evaluation of storage modulus, the termination electrode layer 80 was found to show a storage modulus of 10.sup.7 Pa or more and 10.sup.10 Pa or less (more restrictively, 10.sup.7 Pa or more and 10.sup.9 Pa or less), in the temperature range between −55° C. or more and 155° C. or less. It is worth mentioning that the termination electrode layers 80 with such low temperature dependence as shown in Tables 1A and 1B, in other words, the termination electrode layers 80 less susceptible to temperature change, were obtained. It was therefore confirmed that, with the storage modulus controlled to 10.sup.7 Pa or more and 10.sup.10 Pa or less (more restrictively, 10.sup.7 Pa or more and 10.sup.9 Pa or less), the termination electrode layer 80 can demonstrate mechanical characteristics suitably balanced between high rigidity and flexibility, with a higher degree of certainty.

(41) 2. 1 Mass % Loss Temperature of Termination Electrode Layer

(42) The present inventors further made analysis on temperature at which samples of the aforementioned mixed material that composes the termination electrode layer 80 of this embodiment, and samples of the mixed materials of comparative examples will lose 1 mass % of their weight (1 mass % in resin equivalent) or decompose, when measured by thermogravimetry/differential thermal analysis. Results of evaluation of the loss temperature are shown in Tables 1A, 1B and 2.

(43) More specifically, the samples of the mixed material representing the termination electrode layer 80 of this embodiment were subjected to thermogravimetry/differential thermal analysis (TG/DTA) using a thermogravimetry/differential thermal analyzer (model: TG/DTA6200, from Seiko Instruments, Inc.) in a nitrogen atmosphere within the temperature range from 25° C. to 320° C. and at a heating rate of 10° C./min. By the measurement, the temperature at which the samples will lose 1 mass %, in resin equivalent, of their weight, or decompose was measured.

(44) As a consequence, with the 1 mass % loss temperature, in resin equivalent, controlled to 250° C. or more (more preferably 260° C. or more), the termination electrode layer 80 was found to prevent generation of voids inside, to prevent thermal degradation during solder bonding processes, and can therefore suppress or prevent delamination or fracture at around the interface or inside of the termination electrode layer with a higher degree of certainty. From this point of view, the higher the 1 mass % loss temperature, the better. On the other hand, most of highly heat resistant substances have high elastic modulus, and are susceptible to fracture even due to very small strain induced by heat, such feature being so-called brittleness. Suffice it to say, the upper limit value is, for example, 320° C. or less.

(45) 3. Solder Heat Resistance

(46) For the evaluation, manufactured were 3216 size chip resistors 100 having the termination electrode layer 80 or the mixed materials of comparative examples. Each sample was produced by soldering the chip resistor 100 onto copper electrode pads disposed on a glass epoxy substrate, using Sn—Ag(3%)-Cu(0.5%) lead free solder (model: VAPY LF219, from Arakawa Chemical Industries, Ltd.) in a nitrogen atmosphere, at maximum temperatures of 300° C. and 270° C.

(47) The thus soldered chip resistor 100 was cut in the longitudinal direction, and the cross section was observed using an optical microscope or by SEM so as to evaluate occurrence of crack, delamination or fracture, at the interface between the termination electrode layer and the substrate or the nickel plated layer, or inside the termination electrode layer 80. The evaluation was made for at least 10 chip resistors 100 in the same way. Results of evaluation of the solder heat resistance are shown in Tables 3A, 3B and 4. Notation of the results of evaluation is as follows:

(48) ∘: crack, delamination or fracture was not observed;

(49) Δ: 10% or less of samples showed crack, delamination or fracture; and

(50) x: more than 10% of samples showed crack, delamination or fracture.

(51) 4. Thermal Shock Resistance Under Thermal Cycling

(52) For the evaluation, manufactured were 3216 size chip resistors 100 (rated 1 kΩ resistors) having the termination electrode layer 80 or the mixed materials of comparative examples. Each sample was produced by soldering the chip resistor onto copper electrode pads disposed on a glass epoxy substrate, using Sn—Ag(3%)-Cu(0.5%) lead free solder (model: VAPY LF219, from Arakawa Chemical Industries, Ltd.) in a nitrogen atmosphere, at a maximum temperature of about 240° C.

(53) The samples were placed in a heat cycle tester with a liquid tank (liquid-to-liquid cold thermal shock chamber model TSB-51, from ESPEC Corporation), and exposed to 5000 cycles of temperature history repeated between low temperature side (−55° C., 30 min) and high temperature side (155° C., 30 min). In the evaluation, samples that caused 10% or more increase from the initial value in the resistivity were determined to be unacceptable. The evaluation was made for at least 150 samples in the same way. Results of evaluation of the thermal shock resistance under thermal cycling are shown in Tables 3A, 3B and 4. Notation of the results of evaluation is as follows:

(54) ∘: zero unacceptable samples;

(55) Δ: 20% or less unacceptable samples; and

(56) x: more than 20% unacceptable samples.

(57) 5. Die Shear Strength at Interface of Electroplated Layer/Termination Electrode Layer in Chip Resistor

(58) The present inventors evaluated temperature dependence of die shear strength (adhesion strength against shearing load) at the interface between the termination electrode layer 80 (a layer made of the mixed material) of this embodiment or the mixed materials of comparative examples, and the nickel plated layer. In the evaluation, each of the mixed materials that composes the termination electrode layer 80 or each of the mixed materials of comparative examples was applied by screen printing to the ceramic substrate, a nickel-plated silicon chip was placed on the coating, and then bonded by thermal curing at 175° C. for 15 minutes. The thus obtained sample was set on an ordinary die shear tester (model Series 4000PA2A, from Dage Precision Industries, Ltd.), and allowed to cause shear fracture while controlling the sample temperature on a hot plate, during which fracture strength was measured. Results of evaluation of the die shear strength are shown in Tables 3A, 3B and 4, in terms of “adhesion strength”. Notation of the results of evaluation is as follows:

(59) ∘: die shear strength is 4 N/mm.sup.2 or more;

(60) Δ: die shear strength is 2 N/mm.sup.2 or more and less than 4 N/mm.sup.2; and

(61) x: die shear strength is less than 2 N/mm.sup.2.

(62) Analyses of the results of evaluation of die shear strength revealed that the termination electrode layer 80 of this embodiment is less likely to cause degradation of die shear strength as compared with the mixed materials of comparative examples, in a high temperature region of 100° C. or more and 200° C. or less. More specifically, the termination electrode layer 80 was confirmed to have a die shear strength of 4 N/mm.sup.2 or more in the aforementioned high temperature region. Hence, the termination electrode layer 80 was confirmed to retain a sufficient level of adhesion strength in terms of die shear strength particularly in the high temperature region.

(63) 6. Volume Resistivity

(64) In the evaluation, each of the mixed materials that composes the termination electrode layer 80 or each of the mixed materials of comparative examples was printed through a stencil mask (about 35 mm long×about 22 mm wide×about 0.2 mm thick) onto a glass substrate (about 77 mm long×about 27 mm wide×about 1.5 mm thick). The printed glass substrate was placed in a thermostat chamber, and heated at 175° C. for 15 minutes so as to allow a solvent to vaporize and to thermally cure the mixed material. A cured product (electrode) was thus produced. The cured product was measured regarding specific resistivity at room temperature by a four-point-probe method. Results of evaluation of volume resistivity are shown in Tables 3A, 3B and 4. Note that the smaller the value, the better the electroconductivity of the cured product (electrode).

(65) 7. Evaluation of Voids

(66) In the evaluation, each of the mixed materials that composes the termination electrode layer 80 or each of the mixed materials of comparative examples was printed through a stencil mask (about 35 mm long×about 22 mm wide×about 0.2 mm thick) onto a glass substrate (about 77 mm long×about 27 mm wide×about 1.5 mm thick). The printed glass substrate was placed in a thermostat chamber, and heated at 175° C. for 15 minutes so as to allow a solvent to vaporize and to thermally cure the mixed material. A cured product (electrode) was thus produced. The cured product was cut at a freely selected position, and the emerged cross-sectional surface was observed using an optical microscope (at a magnification of 200). The evaluation was made for at least three samples in the same way. Results of evaluation of voids are shown in Tables 3A, 3B and 4.

(67) ∘: No voids were found in coating film;

(68) Δ: several micro-voids were found in coating film; and

(69) x: considerably large voids, or 10 or more relatively large voids were found in coating film.

(70) As described above, it becomes possible to realize the chip resistor 100 having high reliability even under harsh environments, by employing such termination electrode layer 80 of this embodiment. More specifically, the effects (1) to (3) below may be demonstrated:

(71) (1) the chip resistor 100 can suppress thermal decomposition of the termination electrode layer 80, and can prevent or suppress generation of voids at the interface with the electroplated layer, or splashing of solder with a high degree of certainty;

(72) (2) the chip resistor 100 can suppress or prevent delamination of the termination electrode layer 80 from the electroplated layer or the alumina substrate caused by load applied during solder bonding processes or heat cycle, and/or delamination or fracture inside the termination electrode layer or at solder bonded part, with a high degree of certainty; and

(73) (3) the chip resistor 100, when solder-bonded on a mounting board, can allow the termination electrode layer 80 to demonstrate a sufficient level of adhesion strength with the electroplated layer or the substrate, not only at normal temperature, but also under a low-temperature condition of −55° C. or less, or even under a high-temperature condition more than 150° C.

(74) As described above, it becomes possible to realize the chip resistor 100 having high reliability even under harsh environments, by employing such termination electrode layer 80 of this embodiment. More specifically, the effects (1) to (3) below may be demonstrated:

(75) (1) the chip resistor 100 can prevent or suppress generation of voids between the termination electrode layer 80 and the electroplated layer, or can prevent splashing of solder with a high degree of certainty;

(76) (2) the chip resistor 100 can suppress or prevent delamination of the termination electrode layer 80 from the electroplated layer or the alumina substrate caused by load applied during solder bonding processes or heat cycle, with a high degree of certainty; and

(77) (3) the chip resistor 100, when solder-bonded on a mounting board, can allow the termination electrode layer 80 to demonstrate a sufficient level of adhesion strength with the electroplated layer or the substrate, not only at normal temperature, but also under a low-temperature condition of −55° C. or less, or even under a high-temperature condition more than 150° C.

EXAMPLES

(78) The embodiment will be described below in further detail, referring to examples and comparative examples. These examples are, however, disclosed only for the purpose of illustrating the aforementioned embodiment, without restricting the embodiment. The numerical values of the individual components (individual starting materials) in examples and comparative examples are used to represent “part(s) by mass”, and “%” means “mass %” except for the evaluation item “volume fraction”.

(79) <Preparation of Mixed Materials>

(80) The mixed materials of the first embodiment shown in individual examples (1 to 22) and comparative examples (1 to 9) were manufactured as described below, as represented by Example 1. As described above, the termination electrode layer 80 in the first embodiment is made of such mixed material.

(81) Using a kneader mixer, stirred and mixed were carbon (with a surface area per gram of 1200 m.sup.2 or more), whisker-like particles made of silver-coated potassium titanate (with an average fiber diameter of about 0.3 an average fiber length of about 30 and an aspect ratio of about 60), flake-like particles made of silver with an average particle diameter of about 4 μm and an aspect ratio of 20 or more, a tetrafunctional hydroxyphenyl type epoxy resin with a number average molecular weight of about 620, an imidazole-based curing agent with an activation start temperature of about 130° C., and ethyl carbitol as a solvent, according to numbers of part of mixing for Example 1 in Tables 1A and 1B. The electrically-conductive particles were then allowed to disperse uniformly in the paste, using a triple roll mill.

(82) The paste was then applied by the roller transfer method on both end faces of a 3216 size alumina substrate having preliminarily mounted thereon a resistive element of rated 1 kΩ, a metal electrode layer made of silver, and a protective film for the resistive element so as to form a coating film having a thickness after curing of about 20 μm at around the center of each end face. The coating film was then thermally cured in a drying oven at 175° C. for 15 minutes. The termination electrode layer was thus formed. On the termination electrode layer, formed were a nickel plated layer of about 15 μm thick, and further thereon a tin plated layer of about 50 μm thick, by electrolytic plating. A chip resistor was thus obtained.

(83) Tables 1A and 1B show the individual components of the mixed materials in Examples 1 to 22. Meanwhile, Table 2 shows the individual components in Comparative Examples 1 to 9.

(84) In more detail, Examples 2 to 11 represent the cases where ratio of the whisker-like particles to the flake-like particles, and the volume fraction of these particles in the layer made of the mixed material have been modified from those in Example 1. Components in Example 12 are same as those in Example 1, except that an imidazole-based curing agent with an activation start temperature of 110° C. or more (more specifically, with an activation start temperature of about 147° C.) but is different from that in Example 1 was used. Components in Example 13 are same as those in Example 1, except that a hydroxyphenyl-type epoxy resin having a molecular weight modified from that in Example 1 (a number average molecular weight of about 770) was used.

(85) Components in Example 14 are same as those in Example 1, except that dicyandiamide as the curing agent and an imidazole-based curing agent as the curing catalyst (f) were used. Components in Examples 15 and 16 are same as those in Example 1, except that the curing catalyst (f) was used in addition to the components in Example 1. Components in Examples 17 to 22 are same as those in Example 1, except that Cu, Ni, Sn, Au, Pt, and solder (Sn-3Ag-0.5Cu alloy in this example) were respectively added as the electrically-conductive substance (a′).

(86) Comparative examples are as follows. Components in Comparative Example 1 are same as those in Example 1, except that carbon is not contained. Components in Comparative Examples 2 and 3 are same as those in Example 1, except that mass ratios of the flake-like particles are 9 or more (more specifically, 12) and less than 3/7 (more specifically, 0.24), respectively, when the whisker-like particles are assumed to be 1. Components in Comparative Example 4 are same as those in Example 1, except that a hydroxyphenyl-type epoxy resin with a number average molecular weight more than 800 (more specifically, with a number average molecular weight of about 1700) was employed. Components in Comparative Example 5 are same as those in Example 1, except that a bisphenol A-type epoxy resin (with a mass average molecular weight of about 50000), other than the hydroxyphenyl-type epoxy resin, was employed. Components in Comparative Example 6 are same as those in Example 1, except that a bisphenol A-type epoxy resin (with a mass average molecular weight of about 5500) and a novolac-type epoxy resin, other than the hydroxyphenyl-type epoxy resin, were employed. Components in Comparative Example 7 are same as those in Example 1, except that an imidazole-based curing agent with an activation start temperature less than 110° C. (more specifically, with an activation start temperature of 83° C.), which is different from that in Example 1, was used. Components in Comparative Example 8 are same as those in Example 1, except that a curing agent (for example, a phenol-type curing agent), different from the imidazole-based curing agent and dicyandiamide, was used. Components in Comparative Example 9 are same as those in Example 1, except that the volume fraction of the whisker-like particles and the flake-like particles, in the layer made of the mixed material, is more than 25% (more specifically, 27%).

(87) Regarding each of the aforementioned examples and comparative examples, evaluated and analyzed were:

(88) (i) solder heat resistance of the layer made of the mixed material (at 300° C. and 270° C.);

(89) (ii) thermal shock resistance under thermal cycling, between −55° C. and 155° C., of the layer made of the mixed material;

(90) (iii) adhesion strength at the interface between the layer made of the mixed material and the ceramic substrate, or between the layer made of the mixed material and the nickel plated layer, at 160° C. and 200° C.;

(91) (iv) volume resistivity of the layer made of the mixed material; and

(92) (v) presence or absence of voids in the layer made of the mixed material.

(93) Tables 1A, 1B, 3A, and 3B show results of the individual evaluations and analyses of the aforementioned examples. Tables 2 and 4 show results of the individual evaluations and analyses of the aforementioned comparative examples. The sample of Comparative Example 7 was thickened and gelated within a short time after produced, and neither measured nor evaluated.

(94) TABLE-US-00001 TABLE 1A Example 1 Example 2 Example 3 Example 4 Example 5 Example 6 Example 7 Hydoxyphenyl-type 100 100 100 100 100 100 100 epoxy resin (d) A Hydroxyphenyl-type 0 0 0 0 0 0 0 epoxy resin (d) B Curing agent (e), 5 5 5 5 5 5 5 imidazole-based A Curing agent (e), 0 0 0 0 0 0 0 imidazole-based B Carbon (a) 9 9 9 9 9 9 9 Whisker-like 47 58 31 50 13 38 79 particles (b) Flake-like 110 135 126 250 115 57 79 particles (c) Ethyl carbitol 73 73 73 73 73 73 73 Total 344 380 344 487 315 282 345 Mass ratio of 2.34 2.33 4.06 5.00 8.85 1.50 1.00 flake-like particles (whisker-like particles = 1) Area fraction of 39.5 40.2 51.6 61.0 47.6 32.5 36.1 (b) and (c) on outermost surface (%) Spacing between 6.7 5.5 4.8 2.2 2.4 7.2 6.0 contact points of (b) or (c) and nickel plating (μm) Volume fraction of 13.4 16.0 13.2 24.0 11.7 8.7 13.9 (b) + (c) (%) Maximum elastic 9.4 × 10.sup.7 9.1 × 10.sup.7 8.0 × 10.sup.7 6.4 × 10.sup.7 9.4 × 10.sup.7 2.3 × 10.sup.8 8.8 × 10.sup.7 modulus in range from −55 to 155° C. (Pa) Minimum elastic 2.0 × 10.sup.7 1.4 × 10.sup.7 1.8 × 10.sup.7 1.4 × 10.sup.7 1.6 × 10.sup.7 1.9 × 10.sup.7 1.5 × 10.sup.7 modulus in range from −55 to 155° C. (Pa) 1 mass % Loss 266 266 268 267 265 265 266 temperature (° C.) Example 8 Example 9 Example 10 Example 11 Example 12 Example 13 Hydoxyphenyl-type 100 100 100 100 100 0 epoxy resin (d) A Hydroxyphenyl-type 0 0 0 0 0 100 epoxy resin (d) B Curing agent (e), 5 5 5 5 0 5 imidazole-based A Curing agent (e), 0 0 0 0 5 0 imidazole-based B Carbon (a) 9 9 9 9 9 9 Whisker-like 90 73 97 43 47 47 particles (b) Flake-like 39 32 97 43 110 110 particles (c) Etkyl carbitol 73 73 73 73 73 73 Total 316 292 381 273 344 344 Mass ratio of 0.43 0.44 1.00 1.00 2.34 2.34 flake-like particles (whisker-like particles = 1) Area fraction of 32.2 31.5 33.3 30.1 41.5 35.3 (b) and (c) no outermost surface(%) Spacing between 8.1 9.1 3.3 9.6 4.4 7.0 contact points of (b) or (c) and nickel plating(μm) Volume fraction of 12.0 10.0 16.5 8.0 13.4 13.4 (b) + (c) (%) Maximum elastic 9.1 × 10.sup.7 9.4 × 10.sup.7 9.3 × 10.sup.7 9.9 × l0.sup.7 8.6 × 10.sup.7 9.0 × 10.sup.7 modulus in range from −55 to 155° C. (Pa) Minimum elastic 1.5 × 10.sup.7 1.7 × 10.sup.7 1.4 × 10.sup.7 2.0 × 10.sup.7 1.4 × 10.sup.7 2.3 × 10.sup.7 modulus in range from −55 to 155° C. (Pa) 1 mass % Loss 271 266 267 269 265 269 temperature (° C.)

(95) TABLE-US-00002 TABLE 1B Example 14 Example 15 Example 16 Example 17 Example 18 Example 19 Example 20 Example 21 Example 22 Hydroxyphenyl- 108 100 100 100 100 100 100 100 100 type epoxy resin (d) A Hydroxyphenyl- 0 0 0 0 0 0 0 0 0 type epoxy resin (d) B Curing agent 1 5 5 5 5 5 5 5 5 (e), imidazole- based A Curing agent 0 0 0 0 0 0 0 0 0 (e), imidazole- based B Curing agent (e), 7 0 0 0 0 0 0 0 0 dicyandiamide Curing catalyst 0 0.01 0 0 0 0 0 0 0 (f), Sn-based Curing catalyst 0 0 0.01 0 0 0 0 0 0 (f), P-based Carbon (a) 9 9 9 9 9 9 9 9 9 Electrically- 0 0 0 3 0 0 0 0 0 conductive substance (a′), Cu particles Electrically- 0 0 0 0 3 0 0 0 0 conductive substance (a′), Ni particles Electrically- 0 0 0 0 0 3 0 0 0 conductive substance (a′), Sn particles Electrically- 0 0 0 0 0 0 3 0 0 conductive substance (a′), An particles Electrically- 0 0 0 0 0 0 0 3 0 conductive substance (a′), Pt particles Electrically- 0 0 0 0 0 0 0 0 3 conductive substance (a′), Sn—3Ag—0.5Cu particles Whisker-like 47 47 47 47 47 47 47 47 47 particles (b) Flake-like 110 110 110 110 110 110 110 110 110 particles (c) Ethyl carbitol 73 73 73 73 73 73 73 73 73 Total 347 344.01 344.01 347 347 347 347 347 347 Mass ratio of 2.34 2.34 2.34 2.34 2.34 2.34 2.34 2.34 2.34 flake-like particles (whisker-like particles = 1) Area fraction 42.5 40.7 40.5 39.8 40.0 39.6 39.5 39.6 40.0 of (b) and (c) on outermost surface (%) Spacing between 5.7 6.4 6.5 6.7 6.6 6.8 6.6 6.6 6.5 contact points of (b) or (c) and nickel plating (μm) Volume fraction 13.4 13.4 13.4 13.4 13.4 13.4 13.4 13.4 13.4 of (b) + (c) (%) Maximum elastic 3.5 × 10.sup.8 1.1 × 10.sup.8 1.5 × 10.sup.8 9.3 × 10.sup.7 9.3 × 10.sup.7 9.4 × 10.sup.8 9.2 × 10.sup.7 9.2 × 10.sup.7 9.4 × 10.sup.7 modulus in range from −55 to 155° C. (Pa) Minimum elastic 3.3 × 10.sup.7 2.5 × 10.sup.7 2.8 × 10.sup.7 2.0 × 10.sup.7 1.9 × 10.sup.7 2.0 × 10.sup.7 2.0 × 10.sup.7 1.9 × 10.sup.7 2.1 × 10.sup.7 modulus in range from −55 to 155° C. (Pa) 1 mass % Loss 275 270 272 267 266 265 267 268 262 temperature (° C.)

(96) TABLE-US-00003 TABLE 2 Comparative Comparative Comparative Comparative Comparative Comparative Comparative Comparative Comparative Example 1 Example 2 Example 3 Example 4 Example 5 Example 6 Example 7 Example 8 Example 9 Hydroxyphenyl-type 108 100 100 0 0 0 100 100 100 epoxy resin (d) A Hydroxyphenyl-type 0 0 0 0 0 0 0 0 0 epoxy resin (d) B Hydroxyphenyl-type 0 0 0 100 0 0 0 0 0 epoxy resin (d) C Bisphenol A-type 0 0 0 0 100 0 0 0 0 epoxy resin D Bisphenol A-type 0 0 0 0 0 50 0 0 0 epoxy resin E Novolac-type epoxy 0 0 0 0 0 50 0 0 0 resin F Imidazole-based 5 5 5 5 5 5 0 0 5 curing agent (e) A Imidazole-based 0 0 0 0 0 0 0 0 0 curing agent (e) B Imidazole-based 0 0 0 0 0 0 5 0 0 curing agent C Curing agent D 0 0 0 0 0 0 0 5 0 Carbon (a) 0 9 9 9 9 9 9 9 9 Whisker-like 47 10 127 47 38 26 47 47 102 particles (b) Flake-like 110 120 31 110 88 60 110 110 238 particles (c) Ethyl carbitol 73 73 73 73 73 73 73 73 73 Total 335 317 345 344 344 344 344 344 527 Mass ratio of 2.34 12.0 0.24 2.34 2.34 2.34 2.34 2.34 234 flake-like particles (whisker-like particles = 1.) Area fraction 38.9 43.2 26.0 24.2 21.2 9.6 38.0 37.5 of (b) and (c) on outermost surface (%) Spacing between 4.9 3.7 10.3 10.6 11.6 13.8 5.5 3.6 contact points of (b) or (c) and nickel plating (μm) Volume fraction 13.4 11.8 13.5 13.4 13.4 13.4 13.4 27.0 of (b) + (c) (%) Maximum elastic 8.8 × 10.sup.7 8.0 × 10.sup.7 8.1 × 10.sup.7 7.4 × 10.sup.7 9.0 × 10.sup.7 1.8 × 10.sup.8 5.2 × l0.sup.7 2.0 × 10.sup.7 modulus in range from −55 to 155° C. (Pa) Minimum elastic 1.4 × 10.sup.7 1.8 × 10.sup.7 1.2 × 10.sup.7 9.7 × 10.sup.6 1.4 × 10.sup.6 3.6 × 10.sup.6 7.5 × 10.sup.6 7.4 × 10.sup.6 modulus in range from −55 to 155° C. (Pa) 1 mass % Loss 268 266 266 287 270 243 258 267 temperature (° C.) (Note) The sample of Comparative Example 7 was thickened or gelated within a short time after manufacture, and was not measured.

(97) TABLE-US-00004 TABLE 3A Example 1 Example 2 Example 3 Example 4 Example 5 Example 6 Example 7 Solder heat ◯ ◯ ◯ ◯ ◯ Δ ◯ resistance at 300° C. Solder heat ◯ ◯ ◯ ◯ ◯ ◯ ◯ resistance at 270° C. Thermal shock ◯ ◯ ◯ Δ ◯ ◯ ◯ resistance under thermal cycling between −55° C. and 155° C. Adhesion strength ◯ ◯ ◯ ◯ ◯ ◯ ◯ at 160° C. Adhesion strength ◯ ◯ ◯ ◯ ◯ Δ ◯ at 200° C. Volume resistivity 2.3 × 10.sup.−4 1.1 × 10.sup.−4 1.4 × 10.sup.−4 8.9 × 10.sup.−6 1.4 × 10.sup.−3 6.9 × 10.sup.−4 2.3 × 10.sup.−4 (Ω cm) Voids in coating ◯ ◯ ◯ ◯ ◯ ◯ ◯ film Example 8 Example 9 Example 10 Example 11 Example 12 Example 13 Solder heat Δ Δ ◯ Δ ◯ ◯ resistance at 300° C. Solder heat ◯ ◯ ◯ Δ ◯ ◯ resistance at 270° C. Thermal shock ◯ ◯ ◯ ◯ ◯ ◯ resistance under thermal cycling between −55° C. and 155° C. Adhesion strength ◯ ◯ ◯ ◯ ◯ ◯ at 160° C. Adhesion strength ◯ ◯ ◯ Δ ◯ ◯ at 200° C. Volume resistivity 1.4 × 10.sup.−4 5.7 × 10.sup.−4 1.4 × 10.sup.−4 1.8 × 10.sup.−3 1.3 × 10.sup.−4 3.2 × 10.sup.−4 (Ω cm) Voids in coating ◯ ◯ ◯ ◯ ◯ ◯ film

(98) TABLE-US-00005 TABLE 3B Example 14 Example 15 Example 16 Example 17 Example 18 Example 19 Example 20 Example 21 Example 22 Solder heat ◯ ◯ ◯ ◯ ◯ ◯ ◯ ◯ ◯ resistance at 300° C. Solder heat ◯ ◯ ◯ ◯ ◯ ◯ ◯ ◯ ◯ resistance at 270° C. Thermal shock ◯ ◯ ◯ ◯ ◯ ◯ ◯ ◯ ◯ resistance under thermal cycling between −55° C. and 155° C. Adhesion ◯ ◯ ◯ ◯ ◯ ◯ ◯ ◯ ◯ strength at 160° C. Adhesion ◯ ◯ ◯ ◯ ◯ ◯ ◯ ◯ ◯ strength at 200° C. Volume 6.1 × 10.sup.−4 2.1 × 10.sup.−4 2.0 × 10.sup.−6 2.8 × 10.sup.−6 3.2 × 10.sup.−3 3.0 × 10.sup.−4 1.7 × 10.sup.−4 1.8 × 10.sup.−4 2.9 × 10.sup.−4 resistivity (Ω cm) Voids in ◯ ◯ ◯ ◯ ◯ ◯ ◯ ◯ ◯ coating film

(99) TABLE-US-00006 TABLE 4 Comparative Comparative Comparative Comparative Comparative Comparative Comparative Comparative Comparative Example 1 Example 2 Example 3 Example 4 Example 5 Example 6 Example 7 Example 8 Example 9 Solder heat X X X X X X X X resistance at 300° C. Solder heat X X X X X X X Δ resistance at 270° C. Thermal shock Δ Δ Δ Δ X X X Δ resistance under thermal cycling between −55° C. and 155° C. Adhesion Δ X Δ Δ X Δ Δ Δ strength at 160° C. Adhesion X X X X X Δ Δ X strength at 200° C. Volume 8.2 × 10.sup.−3 5.4 × 10.sup.−3 1.7 × 10.sup.−4 2.1 × 10.sup.−4 6.7 × 10.sup.−4 4.4 × 10.sup.−3 2.8 × 10.sup.−4 9.1 × 10.sup.−6 resistivity Voids in ◯ ◯ X ◯ ◯ ◯ Δ ◯ coating film (Note) The sample of Comparative Example 7 was thickened or gelated within a short time after manufacture, and was not measured.

(100) As can be understood from Tables 1A, 1B, 3A and 3B, with the termination electrode layer of this embodiment, it becomes possible to realize the chip resistor 100 having high reliability even under harsh environments.

(101) Note that the aforementioned embodiment and examples were disclosed for the purpose of illustrating such embodiment and examples, without restricting the present invention. Moreover, any modified examples that include other combinations of the aforementioned embodiment and fall within the scope of the present invention are understood to be embraced by the claims.

INDUSTRIAL APPLICABILITY

(102) The chip-shaped electronic component of the aforementioned embodiment may be used mainly as an electronic component or a part of the same.