Scroll type micro-compressor, and method for machining fixed scroll plate and orbit scroll plate thereof
11078907 · 2021-08-03
Assignee
Inventors
Cpc classification
F05C2203/06
MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
F01C17/066
MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
F04C18/0292
MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
F04C2230/10
MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
F04C18/0269
MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
F04C18/0253
MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
International classification
F04C18/02
MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
Abstract
The embodiments of the present disclosure disclose a scroll type micro-compressor, and a method for machining a fixed scroll plate and an orbit scroll plate thereof. The scroll type micro-compressor comprises a fixed scroll plate and an orbit scroll plate each integrally made with a monocrystalline silicon substrate; the compressor device has an Oldham ring structure, and reduces a mass of the orbit scroll plate by optimizing a design of a substrate of the orbit scroll plate; a cross-sectional shape of a plurality of micropores provided on a lower surface of the fixed scroll plate is set as of a fan ring, in which an electrode material is accommodated to maintain an electric field uniformity and reduce an electric field loss; and hydrophilia of inner surfaces is changed to prevent a top leakage and facilitate capillary filling of a compression chamber.
Claims
1. A scroll type micro-compressor, comprising: a fixed scroll plate and an orbit scroll plate, each integrally made with a monocrystalline silicon substrate; wherein the fixed scroll plate further comprises: a fixed scroll plate substrate; a fixed scroll wall integrally formed on an upper surface of the fixed scroll plate substrate; and an annular shell integrally formed on the upper surface of the fixed scroll plate substrate and located outside the fixed scroll wall, wherein a side of the annular shell is provided with an inlet, and an upper surface of the annular shell is provided with a pair of cylindrical keyways radially and symmetrically distributed with respect to the fixed scroll wall; wherein a plurality of micropores uniformly distributed along the fixed scroll wall are provided to extend from a lower surface of the fixed scroll plate substrate into the fixed scroll wall through the fixed scroll plate substrate, the micropores being filled with electrode materials connected by wires to pads provided respectively on the lower surface of the fixed scroll plate substrate and close to edges of the fixed scroll plate substrate, a cross-sectional shape of the micropore being a fan ring, points on an inner arc edge of the fan ring being equidistant from an inside edge of the fixed scroll wall, and points on an outer arc edge of the fan ring being equidistant from an outside edge of the fixed scroll wall; and wherein a through-hole is provided on the fixed scroll plate substrate and at a center of the fixed scroll wall as a discharge port; wherein the orbit scroll plate further comprises: an orbit scroll plate substrate, comprising a circular body portion and a pair of short arms coplanar with the circular body portion and provided to radially extend from two ends of a diameter of the circular body portion, either of the two short arms being provided with a raised cylindrical insertion key; and an orbit scroll wall provided on an upper surface of the orbit scroll plate substrate; and wherein a distance between central axes of the two cylindrical insertion keys is equal to a distance between central axes of the two cylindrical keyways, and a cross-sectional diameter of the cylindrical insertion key is smaller than a cross-sectional diameter of the cylindrical keyway, so that the insertion key is inserted into a corresponding keyway, and wherein the insertion key and the keyway form an Oldham ring structure to prevent an autogyration of the orbit scroll plate.
2. The scroll type micro-compressor as set forth in claim 1, wherein the orbit scroll plate is made of a monocrystalline silicon substrate, and the orbit scroll plate substrate and the orbit scroll wall are integrally formed.
3. A method for machining the orbit scroll plate in the scroll type micro-compressor as set forth in claim 2, comprising the steps of: defining shapes of the orbit scroll wall and the Oldham ring insertion key on an upper surface of a monocrystalline silicon wafer by photolithography, and subsequently performing anisotropic silicon-etching to a designated depth; defining a shape of the orbit scroll plate substrate outlined by a narrow channel on a lower surface of the monocrystalline silicon wafer by photolithography, and releasing the orbit scroll plate entirely by anisotropic silicon-etching through the wafer.
4. The scroll type micro-compressor as set forth in claim 1, wherein the fixed scroll plate substrate has a shape that can be directly cut by dicing.
5. The scroll type micro-compressor as set forth in claim 4, wherein the fixed scroll plate substrate is square or rectangular.
6. The scroll type micro-compressor as set forth in claim 1, wherein a radius R of the keyway and a radius r.sub.key of the insertion key satisfy the following constraint:
R=r.sub.key≥πr.sub.0−t.sub.wall, wherein r.sub.0 is an initial radius of the orbit scroll wall, the initial radius being a distance from a start point to a center of the orbit scroll wall; and wherein t.sub.wall is a radial thickness of the fixed scroll wall, and equal to a radial thickness of the orbit scroll wall.
7. The scroll type micro-compressor as set forth in claim 1, wherein the circular body portion of the orbit scroll plate substrate is minimized to reduce a mass of the orbit scroll plate, thereby reducing an electrostatic drive load.
8. The scroll type micro-compressor as set forth in claim 7, wherein a radius r.sub.min of the circular body portion of the orbit scroll plate substrate satisfies the following constraint:
r.sub.min>r.sub.0√{square root over (1+(θ+π).sup.2)}−t.sub.wall/2 wherein, r.sub.0 is an initial radius of the orbit scroll wall, the initial radius being a distance from a start point to a center of the orbit scroll wall; θ is an angle from the start point to a tail end of the orbit scroll wall; t.sub.wall is a radial thickness of the orbit scroll wall, and equal to a radial thickness of the fixed scroll wall.
9. The scroll type micro-compressor as set forth in claim 1, wherein the fixed scroll plate and the orbit scroll plate are subjected to surface treatments, so that the upper surfaces of the fixed scroll plate substrate and the orbit scroll plate substrate and sidewall surfaces of the fixed scroll wall and the orbit scroll wall are hydrophilic, while top surfaces of the fixed scroll wall and the orbit scroll wall are hydrophobic.
10. The scroll type micro-compressor as set forth in claim 1, wherein the plurality of micropores are uniformly distributed along a spiral line being equidistant to the inside edge of the fixed scroll wall.
11. A method for machining the fixed scroll plate in the scroll type micro-compressor as set forth in claim 1, comprising the steps of: defining the micropores for filling of electrode on a lower surface of a monocrystalline silicon wafer by photoetching, and etching the micropore to a designated depth by anisotropic etching; defining shapes of the fixed scroll wall, the shell and the Oldham ring keyway on an upper surface of the monocrystalline silicon wafer by photolithography, and anisotropic etching to a designated depth; performing an insulation layer conformal deposition or oxidation for the upper surface and the lower surface of the monocrystalline silicon wafer and inner surface of the micropore; depositing a conductive material on the lower surface of the monocrystalline silicon wafer to fill the micropores to form embedded electrodes; defining shapes of the wires and pads on the lower surface of the monocrystalline silicon wafer by photolithography, and then performing ion-reactive etching on a conductive material layer to form the wires and the pads.
12. The method as set forth in claim 11, wherein the conductive material is polysilicon.
Description
BRIEF DESCRIPTION OF THE DRAWINGS
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LIST OF THE REFERENCE NUMERALS
(17) 1—scroll type micro-compressor; 2—fixed scroll plate; 3—orbit scroll plate; 4—fixed scroll plate substrate; 5—fixed scroll wall; 51—inside edge of fixed scroll wall; 52—outside edge of fixed scroll wall; 6—annular shell; 7—inlet; 8—orbit scroll plate substrate; 81—circular body portion; 82—short arm; 9—orbit scroll wall; 10—keyway; 11—insertion key; 12—fan ring-shaped micropore; 121—inner arc edge of fan ring; 122—outer arc edge of fan ring; 12′—circularly cross-sectional micropore in the prior art; 13—conductive wire; 14—pad; 15-discharge port.
DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS
(18) The technical solutions in the embodiments of the present disclosure will be described clearly and completely as follows with reference to the drawings in the embodiments of the present disclosure. Obviously, those described are merely parts, rather than all, of the embodiments of the present disclosure. Based on the embodiments of the present disclosure, any other embodiment obtained by those skilled in the art without paying any creative labor should fall within the protection scope of the present disclosure.
(19) As shown in
(20) As shown in
(21) As shown in
(22) In addition, as shown in
(23) The working mechanism of the electrostatically driven scroll type micro-compressor is that when the conductive electrodes are sequentially excited, the orbit scroll wall 9 performs periodic eccentric motions without autogiration under the action of the electrostatic driving force, and the compressed medium is enclosed in a closed crescent-shaped pressure bag formed between the fixed scroll plate 2 and the orbit scroll plate 3. The pressure bag gradually contracts toward the center as the orbit scroll wall 9 moves, and the internal pressure increases, thereby continuously pumping the medium in the pressure bag from a low-pressure region to a high-pressure region and discharging it from the discharge port 15.
(24) As shown in
(25) In an embodiment of the present disclosure, the orbit scroll plate 3 is made of a monocrystalline silicon substrate, and as shown in
(26) In an embodiment of the present disclosure, the fixed scroll plate substrate 4 adopts a shape that can be directly cut by dicing to facilitate the technological machining. Preferably, a square or a rectangle is adopted.
(27) As shown in
R−r.sub.key≥πr.sub.0−t.sub.wall
(28) wherein,
(29) r.sub.0 is an initial radius of the orbit scroll wall 9, i.e., a distance from a start point to a center of the orbit scroll wall 9;
(30) t.sub.wall is a radial thickness of the fixed scroll wall 5, and equal to a radial thickness of the orbit scroll wall 9.
(31) As shown in
(32) As shown in
r=r.sub.0√{square root over (1+θ.sup.2)}
(33) As shown in
d=θr.sub.0
(34) The orbit scroll wall 9 translates along the tangent line for a distance of πr.sub.0, so a distance d′ between the tail end point E.sub.0′ of the orbit scroll wall 9 and the tangent point after translation is:
d′=(θ+π)r.sub.0
(35) Since the right-angle side d′ of the right-angled triangle and r.sub.0 are known, a distance r′ between the tail end point E.sub.0′ of the orbit scroll wall 9 and the origin C is calculated according to the Pythagorean theorem:
r′=r.sub.0√{square root over (1+(θ+π).sup.2)}
(36) According to the symmetry of the initial states of the orbit scroll wall 9 and the fixed scroll wall 5 with respect to the origin and the translational property of the orbit scroll wall 9, it is known that a triangle which connects the origin C, the circle center C′ of the orbit scroll wall 9 after translation, and the tail end point E.sub.0′ of the orbit scroll wall 9 after translation, is similar to a triangle which connects the origin C, the circle center C′ of the orbit scroll wall 9 after translation, and the tail end point E.sub.f of the fixed scroll wall 5. Thus, the distance between the circle center C′ of the orbit scroll wall 9 after translation and the tail end point E.sub.f of the fixed scroll wall 5 is also r′. The diameter of the orbit scroll plate substrate should enable the orbit scroll plate substrate after translation to still cover the tail end point E.sub.f of the fixed scroll wall 5, and the thickness t.sub.wall of the scroll wall in actual machining should be considered. The minimum radius r.sub.min of the orbit scroll plate substrate should satisfy the following constraint:
(37)
(38) Thus, the substrate of the orbit scroll plate 3 as shown in
(39) In summary, the radius r.sub.min of the minimized circular body portion of the orbit scroll plate substrate 8 satisfies the following constraint:
r.sub.min>r.sub.0√{square root over (1+(θ+π).sup.2)}−t.sub.wall/2
(40) wherein,
(41) r.sub.0 is an initial radius of the orbit scroll wall 9, i.e., a distance from a start point to a center of the orbit scroll wall 9;
(42) θ is an angle from the start point to a tail end of the orbit scroll wall 9;
(43) t.sub.wall is a radial thickness of the orbit scroll wall 9, and equal to a radial thickness of the fixed scroll wall 5.
(44) As shown in
(45) The present disclosure further provides a method for machining the fixed scroll plate 2 in the scroll type micro-compressor 1 aforementioned, comprising the following steps of:
(46) Step 1: defining the micropores 12 for filling of electrode on a lower surface of a monocrystalline silicon wafer by photolithography, and etching the micropore 12 to a designated depth by anisotropic etching, wherein the designated depth is ranged from 300 to 500 μm, but not limited thereto, and an appropriate depth may also be selected according to actual needs.
(47) These pores are embedded into the fixed scroll wall by silicon deep reactive ion etching (DRIE) for filling of a conductive electrode material that generates an electrostatic driving force. Each of the embedded electrodes is connected to a pad 14 close to an edge of the substrate by a conductive wire 13 on a lower surface of the substrate, so as to receive a voltage excitation to generate an electrostatic field. The through-hole passing through the center of the fixed scroll plate substrate serves as a discharge port 15 for the compressed medium (liquid/gas). The radial size of the micropore 12 for filling of electrode material should be maximized relative to the thickness of the scroll wall to reduce the loss of the electrostatic driving voltage passing through the scroll wall. The minimum distance between the edge of the micropore and the edge of the scroll wall is limited by the technological conditions, such as the photolithography accuracy, the perpendicularity of DRIE high depth-to-width ratio etching, etc.
(48) Step 2: defining shapes of the fixed scroll wall 5, the shell 6 and the Oldham ring keyway 10 on an upper surface of the monocrystalline silicon wafer by photolithography, and subsequently anisotropic etching to a designated depth using silicon DRIE;
(49) Step 3: performing an insulation layer conformal deposition or oxidation for the upper surface and the lower surface of the monocrystalline silicon wafer and inner surface of the micropore 12;
(50) Step 4: depositing a conductive material on a lower surface of the monocrystalline silicon wafer to fill the micropores 12 to form embedded electrodes;
(51) Step 5: defining shapes of wires 13 and pads 14 on the lower surface of the monocrystalline silicon wafer by photolithography, and etching a conductive material layer using reactive-ion etching (RIE) to form the wires 13 and the pads 14.
(52) Preferably, the conductive material is polysilicon.
(53) In an embodiment of the present disclosure, a fixed scroll plate in the left of
(54) Step 1: defining micropores 12 for filling of electrode on a lower surface (non-polished surface) of a single-side polished silicon wafer by photolithography, and performing anisotropic deep etching of a lower surface of a silicon substrate by a deep reactive ion etching (DRIE).
(55) Step 2: defining shapes of the fixed scroll wall 5, the shell 6 and the Oldham ring keyway 10 on an upper surface (polished surface) of the silicon wafer by performing a second photolithography, and then etching to a designated depth by the DRIE.
(56) Step 3: after removing a photoresist, depositing or oxidizing an entire surface of the monocrystalline silicon wafer, including inner walls of the micropores 12 extending from a lower surface, to form a silicon dioxide insulation thin layer.
(57) Step 4: depositing polysilicon on the micropores 12 and the lower surface of the silicon wafer.
(58) Step 5: defining the wires and pad pattern on the lower surface by performing a third photolithography, and then forming the wires 13 and the pads 14 by a reactive ion etching (RIE) of the polysilicon.
(59) The present disclosure further provides a method for machining the orbit scroll plate 3 in the scroll type micro-compressor 1, comprising the steps of:
(60) defining shapes of the orbit scroll wall 9 and the Oldham ring insertion key 11 on an upper surface of a monocrystalline silicon wafer by photolithography, and then performing anisotropic silicon-etching to a designated depth, wherein the designated depth is ranged from 300 to 500 μm, but not limited thereto, and an appropriate depth may also be selected according to actual needs.
(61) defining a shape of the orbit scroll plate substrate 8 outlined by a narrow channel on a lower surface of the monocrystalline silicon wafer by photolithography, and releasing the orbit scroll plate 3 entirely by anisotropic silicon-etching through the monocrystalline silicon wafer.
(62) In an embodiment of the present disclosure, an orbit scroll plate in the upper left of
(63) Step 1: defining shapes of an orbit scroll wall 9 and an Oldham ring insertion key 11 on an upper surface (polished surface) of a single-side polished monocrystalline silicon wafer, and then etching a scroll wall by a DRIE.
(64) Step 2: defining a shape of an orbit scroll plate substrate 8 by photolithography of a pattern of a narrow channel on a lower surface (non-polished surface) of the monocrystalline silicon wafer, and then performing anisotropic etching of the narrow channel.
(65) Step 3: etching the substrate through to release the orbit scroll plate entirely.
(66) The present disclosure has been explained in detail with the foregoing embodiments, in order to fully understand features for providing these enhancements and the operational improvements. In addition, it can be understood that these additional structural features and the operational improvements may be used alone, or in combination with each other and with all of the features and elements described above and the description of the embodiments illustrated in the drawings. Therefore, it should be understood that the present disclosure is not limited to any specific feature, element or combinations thereof, and any desired combination of features described herein can be practiced without departing from the protection scope of the present disclosure.