RARE EARTH METAL-FREE HARD MAGNETS

Abstract

The invention relates to hard magnets that include an intermetallic compound having the general composition

X.sub.aX′.sub.bY.sub.cZ.sub.d where X and X′ independently from one another are representative of a 3d transition metal with unpaired electrons; Y is a 4d or 5d transition metal of groups 5, 8, 9, or 10 Z is a main group element of groups 13, 14 or 15; a and d independently from one another represent a number between 0.1 and 2.0; and b and c independently from one another represent a number between 0.0 and 2.0; such that a+b+c+d is between 3.0 and 4.0.

Claims

1. A hard magnet comprising an intermetallic compound having the general composition
X.sub.aX′.sub.bY.sub.cZ.sub.d wherein X and X′ independently from one another are representative of a 3d transition metal with unpaired electrons; Y is a 4d or 5d transition metal of groups 5, 8, 9, or 10 Z is a main group element of groups 13, 14 or 15; a and d independently from one another represent a number between 0.1 and 2.0; b represents a number between 0.0 and 2.0; and c is 1; and a+b+c+d is between 3.0 and 4.0.

2. The hard magnet according to claim 1, wherein X and X′ is independently selected from Mn, Fe, Co or Ni.

3. The hard magnet according to claim 1, wherein Y is Ru, Rh, Pd, Pt, Ir, Ag, Au, Nb or Ta.

4. The hard magnet according to claim 1, wherein Z is Al, Ga, In, Ge, Sn, As, Sb or Bi.

5. The hard magnet according to claim 1, wherein a is 1 or 2.

6. The hard magnet according to claim 1, wherein d is 1.

7. The hard magnet according to claim 1, wherein b is either 0 or when a is 1 then b is 1.

8. The hard magnet according to claim 1, wherein the sum of a, b, c, and d is either 3.0 or 4.0.

9. The hard magnet according to claim 1, wherein the intermetallic compound has hexagonal or trigonal crystal symmetry.

10. The hard magnet according to claim 1, wherein the intermetallic compound has magnetocrystalline anisotropy.

11. The hard magnet according to claim 1, having a coercivity B.sub.c of ≥0.05 T.

12. The hard magnet according to claim 1, wherein the hard magnet is sintered.

13. The hard magnet according to claim 1, wherein the hard magnet further comprises a binder.

14. A method of making a hard magnet comprising either sintering or incorporating an intermetallic compound into a binder, said intermetallic compound having the general composition
X.sub.aX′.sub.bY.sub.cZ.sub.d wherein X and X′ is representative of a 3d transition metal with unpaired electrons; Y is a 4d or 5d transition metal of groups 5, 8, 9, or 10 Z is a main group element of groups 13, 14 or 15; a and d independently from one another represent a number between 0.1 and 2.0; and b and c independently from one another represent a number between 0.0 and 2.0; and a+b+c+d is between 3.0 and 4.0.

15. The hard magnet according to claim 5, wherein a is 1 when b is 1, and a is 2 when b is 0.

Description

BRIEF DESCRIPTION OF THE DRAWINGS

[0028] FIG. 1 shows room temperature X-ray powder diffractograms for 22 nm thin Mn.sub.1.5PtGa and 44 nm thin Mn.sub.1.08Fe.sub.0.58Pt.sub.1.19Ga layers grown at different temperatures on the (001) surface of a sapphire support (Al.sub.2O.sub.3): a) 200° C.; b) 300° C.; c) 400° C.; d) 300° C.

[0029] FIG. 2 shows a) the temperature dependence of the magnetization on cooling and at 0.05 T for a thin layer of Mn.sub.1.5PtGa on sapphire (001) as substrate; b) out-of-plane (OP) and in-plane (IP) hysteresis curves at 20 K; c) out-of-plane (OP) and in-plane (IP) hysteresis curves at 200 K; d) out-of-plane hysteresis curves of a 22 nm thin Mn.sub.1.5PtGa layer deposited on the sapphire substrate at various temperatures (20, 50, 100, 150 and 200 K).

[0030] FIG. 3 shows a Mn.sub.1.08Fe.sub.0.58Pt.sub.1.19Ga thin layer of: 44 nm thickness, which was applied at 300° C. on a sapphire (001) carrier; a) temperature dependency of the magnetization on cooling in an external magnetic field of 0.1 T; b) out-of-plane (OP) hysteresis curve at 50 K and 300 K.

DETAILED DESCRIPTION OF THE INVENTION

[0031] The ternary, intermetallic compounds according to the present invention possess a hexagonal or trigonal crystal structure. This is an important feature since crystal structures of this symmetry fulfill the criterion of crystalline anisotropy due to an inherent uniaxial symmetry. In the compounds of the present invention this crystalline anisotropy combines with the pronounced spin-orbit coupling of the 4d and 5d elements (transition metal or main group element). As a consequence of this, these compounds exhibit strong magnetic anisotropy even in the absence of shape anisotropy due to the magnetocrystalline anisotropy.

[0032] The intermetallic compounds of the present invention have the general composition X.sub.aX′.sub.bY.sub.cZ.sub.d and are, thus, composition-wise located between Heusler and half-Heusler compounds.

[0033] Heusler compounds are intermetallic compounds of the general composition X.sub.2YZ and crystallize in the L2.sub.1-structure type (Pearson's Handbook of Crystallographic Data for Intermetallic Phases, ASM International, The Materials Information Society, 1991). Intermetallic compounds in general are compounds

a) between two or more true metals (T1 and T2)
b) between one or more true metals and one or more true metals of the B subgroup
c) between two or more metals of the B subgroup

[0034] The properties of these compounds become less metallic and increasingly similar to real chemical compounds when moving from a) to c). The classification into true metals and elements of the B subgroups is taken from Table 13.1 from R. C. Evans (Introduction to Crystal Chemistry, Walter de Gruyter Verlag Berlin New York 1976 p. 276):

TABLE-US-00001 [00001]

[0035] The metals of the lanthanide and actinide series belong to class T2. In the Heusler compounds X.sub.2YZ, X and Y are predominantly transition metal elements (T2 in the table above), sometimes Y is also a rare earth element. Z is a nonmagnetic metal or a nonmetal (B1 or B2).

[0036] The intermetallic compounds of the present invention have the general composition X.sub.aX′.sub.bY.sub.cZ.sub.d. In these Heusler and half-Heusler compounds respectively [0037] X and X′ is representative of a 3d transition metal with high total spin, i.e. with unpaired electrons, preferably Mn, Fe, Co or Ni; [0038] Y is a 4d or 5d transition metal of groups 5, 8, 9, or 10 which metals are characterized by high spin-orbit coupling (SOC), preferably Ru, Rh, Pd, Pt, Ir, Ag, Au, Nb or Ta; [0039] Z is a main group element of groups 13, 14 or 15, preferably Al, Ga, In, Ge, Sn, As, Sb or Bi, wherein the higher homologs (In, Sn, Sb or Bi) of these elements are also characterized by high spin-orbit coupling (SOC); [0040] a and d represent a number between 0.1 and 2.0; and [0041] b and c represent a number between 0.0 and 2.0; [0042] such that a+b+c+d is between 3.0 and 4.0.

[0043] In the Heusler compounds of the present invention the parameters a, b, c and d can independently be chosen from numbers between 0.1 and 2.0 (for a and d) and between 0.0 and 2.0 (for b and c). Preferably a is 1 or 2, more preferably a is 1 when b is 1 and a is 2 when b is 0. Preferably d is 1. Preferably b is either 0 or—when a is 1—b is preferably 1. Preferably c is 1.

[0044] In general the sum of a, b, c, and d is between 3.0 and 4.0, preferably either 3.0 or 4.0.

Method of Manufacture

[0045] For the manufacture of the compounds of the present invention the sputtering technique is used. This allows the manufacture of thin layers (films) of the compounds. For this purpose elemental metals and/or alloys of two metals are used as targets in sputtering. The base pressure of the vacuum receiver is preferably ≤10.sup.−6 mbar, more preferably ≤10.sup.−7 mbar and most preferred ≤10.sup.−8 mbar and the deposition preferably takes place at 0.1×10.sup.−3 mbar to 10×10.sup.−3 mbar, more preferred at 1×10.sup.−3 mbar to 5×10.sup.−3 mbar, and most preferred at 3×10.sup.−3 mbar within a preferred temperature range of 100° C. to 500° C., more preferred 150° C. to 450° C. and most preferred 200° C. to 400° C. The growth rate of the thin layers is about 0.03 to 0.04 nm/s. After deposition, the thin layers on the substrate within the recipient are preferably vacuum annealed for preferably 5 to 25 minutes, more preferred 10 to 20 minutes and most preferred for about 15 minutes and then slowly cooled to room temperature. Then preferably a protective layer of 2 to 3 nm aluminum is deposited to pre-coat the thin metal layers to protect them from oxidation.

[0046] The crystal structure of the deposited material can be influenced by varying the deposition parameters. It was found that at low deposition temperatures of about 200° C. the hexagonal structure is preferentially formed while with increasing temperature (at about 400° C.) the proportion of the tetragonal half-Heusler compound increases. In a further preferred embodiment the compounds can be obtained by epitaxial growth of the thin films on a predefined substrate with the desired crystal structure, e.g. sapphire substrates (along 0001) or on MgO (along 001) as a substrate. It was observed that the hexagonal compounds of the present invention grow on sapphire preferentially with the crystallographic [001] direction perpendicular to the substrate surface. In principle, hexagonal Ru or Co can also be used as the substrate surface.

[0047] However, these substrates have high lattice mismatch compared to the hexagonal compounds of the present invention and are, therefore, less preferred. A further, but also less preferred alternative is hexagonal SiC (2H) and trigonal SiO.sub.2 as a substrate; thin layers grown on these types of substrate showed poorer crystallinity.

[0048] Manufacture of Magnets for Use

[0049] For use as a magnet the compounds of the present invention can e.g. be sintered as raw material or bonded with an appropriate binder material. Sintered magnets are usually stronger and anisotropic but shapes are limited. They are made by pressure forming the raw materials followed by a heating process. Bonded magnets are less strong as sintered ones but less expensive and can be made into almost any size and shape. For bonded magnets the raw materials (compounds according to the invention) are mixed with 5 to 90 wt.-%, preferably 10 to 60 wt.-%, more preferably 20-40 wt.-% binder, compacted and cured at elevated temperature (e.g. at 50-350° C., preferably at 80-280° C., more preferably at 100-200° C.; depending on the binder used and the temperature stability of the magnetic compound). They are isotropic, i.e. they can be magnetized in any direction. The molding process can e.g. be an injection molding or a compression bonding process. Typical binder types are Nylon, Polyamide, Polyphenylene sulfide (PPS) and Nitrile Butadiene Rubber (NBR)).

Examples

Equipment and Measuring Methods

[0050] The crystal structure and thickness of the films was examined by means of X-ray diffraction (XRD) measurements using a Cu—K.sub.α source (Philips PANanalytical X'pert Pro). Energy-dispersive X-ray spectroscopy (EDX) measurements were performed on a QUANTA 200 FEG I in order to determine the composition of the films. The StrataGEM software package was used to obtain the film thickness. A Quantum Design superconducting quantum interference device vibrating sample magnetometer (MPMS-3) was used to study the magnetic properties of the thin films.

Example 1 and 2

[0051] Mn.sub.1.5PtGa and Mn.sub.1.05Fe.sub.0.55Pt.sub.1.19Ga

[0052] Thin layers of Mn.sub.1.5PtGa and Mn.sub.1.05Fe.sub.0.55Pt.sub.1.19Ga were prepared by epitaxial growth on a sapphire surface (0001) as a substrate. Since sapphire (Al.sub.2O.sub.3) crystallizes in the trigonal crystal system, i.e. with hexagonal metric, the structure of the sapphire surface supports epitaxial growth of the Mn.sub.1.5PtGa and Mn.sub.1.08Fe.sub.0.55Pt.sub.1.19Ga layers.

[0053] Elemental manganese, platinum, iron and alloys of the composition MnGa were used as targets for sputtering. The base pressure of the vacuum receiver was ≤10.sup.−8 mbar, and the deposition on the substrate took place at 3×10.sup.−3 mbar within a temperature range of 200° C. to 300° C. The growth rate of the thin layers was about 0.03 to 0.04 nm/s. After deposition, the thin layers on the substrate within the recipient were vacuum annealed for 15 minutes and then slowly cooled to room temperature. Then a protective layer of 2 to 3 nm aluminum was deposited to protect the thin metal layers from oxidation.

[0054] X-ray powder diffractograms at room temperature in “out-of-plane” geometry on a 22 nm thin layer of Mn.sub.1.5PtGa and a 44 nm thin layer of Mn.sub.1.08Fe.sub.0.58Pt.sub.1.19Ga are shown in FIG. 1. The Bragg reflections of the hexagonal structure are labeled H(0002) and H(0004). The thin layer grown at 300° C. (FIG. 1 b) shows better crystallinity compared to a layer applied at 200° C. (FIG. 1 a). At deposition temperatures above 300° C. (FIG. 1 c), a decrease in Bragg intensities and additional weak reflections are observed (marked with *). It can be assumed that the additional reflections are caused by a tetragonal half-Heusler compound as a secondary phase. Similar behavior is also observed in bulk samples. Substitution of part of the Mn by Fe preserves the hexagonal structure as shown in FIG. 1d. All thin films deposited on sapphire (0001) exhibit texture regardless of the temperature of the deposition. The epitaxial growth on the surface of the trigonal substrate causes hexagonal Mn.sub.1.5PtGa and Mn.sub.1.08Fe.sub.0.58Pt.sub.1.19Ga, respectively, to be deposited with preferential orientation of the crystallographic [001] direction perpendicular to the surface of the substrate and thus parallel to the crystallographic c-axis of the sapphire.

[0055] The crystal structure of the deposited material can be influenced by means of different deposition parameters. It is observed that at low deposition temperatures the hexagonal structure is preferentially formed while with increasing temperature the proportion of the tetragonal half-Heusler compound increases. The lattice parameters of the hexagonal crystal structure are a=4.35 Å and c=5.58 Å for Mn.sub.1.5PtGa and a=4.33 Å and c=5.52 Å for Mn.sub.1.08Fe.sub.0.58Pt.sub.1.19Ga. This corresponds to a lattice mismatch of the a-axis of about 8.2% and 8.6% relative to the a-axis a=4.74 Å of the sapphire substrate. Despite the relatively large lattice mismatch, epitaxial growth of Mn.sub.1.5PtGa and Mn.sub.1.08Fe.sub.0.58Pt.sub.1.19Ga is observed on the sapphire surface (0001) of the substrate.

[0056] The magnetic properties of a well-crystalline thin layer of Mn.sub.1.5PtGa deposited on a sapphire (0001) surface at 300° C. are shown in FIG. 2. FIG. 2a illustrates the magnetization measured in field-cooled mode (FC) at a field strength of 0.05 T as a function of temperature. At a Curie temperature (Tc) of about 241 K, a ferromagnetic to paramagnetic phase transition is observed. The corresponding M(H) curves for 20 K and 200 K are shown for “in-plane” (IP) and “out-of-plane” (OP) directions in FIGS. 2b and 2c, respectively. The data shown correspond to the raw data after deduction of the substrate contribution for the respective temperatures. The sample shows a coercive field strength, H.sub.c, of 1.5 T in “out-of-plane” orientation at 20 K, yet, only a nearly vanishing coercivity (0.18 T) at 200 K (due to the temperature dependency of the magnetic anisotropy). FIG. 2d shows a systematic decrease in coercivity with increasing temperature. The measured value of the coercive force in the “out-of-plane” direction shows the strong magnetic anisotropy compared to the “in-plane” measurement. At 20 K and 5 T, a total magnetization of 400 kA/m is measured. This results in 3.3 MJ/m.sup.3 as the value of the anisotropy constant (K.sub.U) according to the equation K.sub.U=(μ.sub.0M.sub.S×H.sub.a)/2. M.sub.S is the saturation magnetization and H.sub.a is the anisotropy field. An estimate of the latter is obtained by using the intersection point of “in-plane” and “out-of-plane” plots. The thin layers of Mn.sub.1.5PtGa show a (BH).sub.max of about 30 kJm.sup.−3 at 20 K. As the temperature increases, (BH).sub.max decreases, and at 200 K, i.e. near the Curie temperature, it is only 4 kJm.sup.−3.

[0057] FIG. 3 shows the magnetization for a 44 nm thin film of Mn.sub.1.08Fe.sub.0.58Pt.sub.1.19Ga that was deposited at 300° C. A magnetization measured in field-cooled mode (FC) at a field strength of 0.1 T as a function of temperature (FIG. 3a) shows a ferromagnetic to paramagnetic phase transition at about 312 K. Hysteresis curves measured in out-of-plane geometry at 50 and 300 K, respectively, are shown in FIG. 3b. The low temperature measurement shows a coercive field strength of 0.87 T while that of the measurement near T.sub.C is 0.02 T.

[0058] Both examples illustrate that materials with hexagonal crystal structure can exhibit significant coercivities and remanences in the presence of elements with sufficient unpaired electrons, such as manganese or iron, and elements with pronounced spin-orbit coupling, such as platinum. The hexagonal Mn.sub.1.08Fe.sub.0.58Pt.sub.1.19Ga system also shows that both the Curie temperature and the magnetic moment can be further increased in quaternary systems. Similar results can also be achieved in the MnCoPtGa system.