METHOD AND DEVICE FOR BONDING SUBSTRATES
20210183666 · 2021-06-17
Assignee
Inventors
Cpc classification
H01L21/68707
ELECTRICITY
International classification
H01L21/67
ELECTRICITY
Abstract
A method and corresponding device for bonding a first contact surface of a first substrate to a second contact surface of a second substrate. The method includes the steps of arranging a substrate stack, formed from the first substrate and the second substrate and aligned on the contact surfaces, between a first heating surface of a first heating system and a second heating surface of a second heating system.
Claims
1. An accommodating device for accommodating a substrate stack, the device comprising: a receiving system configured to receive the substrate stack and accommodate the received substrate stack only in a peripheral area of the substrate stack.
2. The device according to claim 1, wherein the receiving system comprises mechanical clamps configured to clamp sides of the substrate stack in the peripheral area of the substrate stack.
3. The device according to claim 1, wherein the receiving system comprises an attaching unit configured to attach substrates to form the substrate stack, the attaching unit comprising one or more of: magnetic means for magnetic attachment of the substrates; mechanical means for mechanical attachment of the substrates; means for attachment of the substrates by electrostatic attractive force; and tacking means for tacking attachment of the substrates.
4. The device according to claim 3, wherein the tacking means comprises one or more of: current application means for attaching the substrates through application of a concentrated electric current thereto; and heat application means for attaching the substrates through application of high heat thereto.
5. A handling unit for handling a substrate stack, the handling unit comprising: an accommodating device for accommodating the substrate stack, the accommodating device comprising a receiving system configured to receive the substrate stack and accommodate the received substrate stack only in a peripheral area of the substrate stack.
6. The unit according to claim 5, wherein the receiving system comprises mechanical clamps configured to clamp sides of the substrate stack in the peripheral area of the substrate stack.
7. The unit according to claim 5, wherein the receiving system comprises an attaching unit configured to attach substrates to form the substrate stack, the attaching unit comprising one or more of: magnetic means for magnetic attachment of the substrates; mechanical means for mechanical attachment of the substrates; means for attachment of the substrates by electrostatic attractive force; and tacking means for tacking attachment of the substrates.
8. The unit according to claim 7, wherein the tacking means comprises one or more of: current application means for attaching the substrates through application of a concentrated electric current thereto; and heat application means for attaching the substrates through application of high heat thereto.
9. The unit according to claim 5, wherein the unit is a robot.
10. An apparatus for aligning and bonding substrates, comprising: an alignment unit; a bonding unit; and a transfer area between the alignment unit and the bonding unit, the transfer area configured to transfer the substrates from the alignment unit to the bonding unit, the transfer area comprising a handling unit for handling a stack of the substrates, the handling unit comprising: an accommodating device for accommodating the substrate stack, the accommodating device comprising a receiving system configured to receive the substrate stack and accommodate the received substrate stack only in a peripheral area of the substrate stack.
11. The apparatus according to claim 10, wherein at least one of the alignment unit, the transfer area, and the bonding unit is arranged independently therefrom.
12. The apparatus according to claim 10, wherein the transfer area is a vacuum transfer area.
Description
BRIEF DESCRIPTION OF THE DRAWINGS
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[0091] In the figures, the features that are the same or that have the same effect are identified with the same reference numbers.
DETAILED DESCRIPTION OF THE INVENTION
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[0093] Then, the robot 34 transports the attached and aligned substrate stack 14 in the bonding system 6, in particular by receiving the first substrate 35 on a first surface 35o or the second substrate 36 on a second surface 36o. The surfaces 35o, 36o are in each case facing away from the contact surfaces 35k, 36k.
[0094] The unit 38′ according to
[0095] The vacuum transfer chamber 4′ is connected via valves 2 to the various modules. The modules as well as the vacuum transfer chamber 4′ can be evacuated independently of one another by the valves 2, but are always preferably located on the same vacuum level, preferably the high-vacuum level of the bonding system 6.
[0096] The bonding system 6 is depicted in
[0097] The bonding chamber 10 has a chamber opening 6o that can lock with the valve 2 for loading the bonding chamber 10.
[0098] The valve 2 is formed from a lock drive 24, in particular in the form of an actuator, supported on the base plate. The lock drive 24 serves to open and close a floodgate 27 that is driven by the lock drive 24, a floodgate that opens and closes the chamber opening 6o by a slot 6s. The valve 2 has seals 28 for sealing the bonding chamber 10 against the surrounding area in the closed state of the valve 2.
[0099] In addition, the bonding system 6 comprises a receiving system 18 for receiving the substrate stack 14. The receiving system 18 comprises a substrate base with a base plane E, on which the substrate stack 14 is laid down with the second surface 36o, so that the second surface 36o lies in the base plane E.
[0100] The substrate base is formed by at least two loading pins 21, in the embodiment shown four loading pins 21, running through the bonding chamber 10. The bonding chamber 10 is sealed by seals 20 surrounding the loading pins 21 relative to the surrounding area of the bonding chamber 10. The seals 20 simultaneously serve for sliding, translatory guiding of the loading pins 21.
[0101] The latter are attached on an in particular common adjustment plate 21p on the ends of the loading pins 21 opposite the substrate base. The loading pins 21 are preferably coupled to one another mechanically by the adjustment plate 21p and are moved in a translatory manner crosswise to the base plane E by an adjustment drive 22 that acts in particular centrically on the adjustment plate 21p, an adjustment drive 22 preferably in the form of a single loading pin actuator, or as an alternative by means of several loading pin actuators.
[0102] Within the loading pins 21, a second heating system 26 is arranged for heating the second surface 36o and an in particular full-surface, attached second pressure plate 25 on the second heating system 26. The second pressure plate 25 has a second heating surface 19, which can be arranged below the base plane E, parallel to the latter. The heating system 26 and the pressure plate 25 are connected securely to the bonding chamber 10 and are static, i.e., cannot move relative to the base plane E.
[0103] Opposite to the second heating surface 19, a first heating surface 15 can be arranged parallel to the base plane E and above the latter. The first heating surface 15 is arranged on a first pressure plate 29, which in turn is attached to a first heating system 30, in particular on the full surface.
[0104] The heating system 30 can be adjusted by drive means crosswise to the base plane. The heating system 30 is attached to an adjustment rod that runs through the bonding chamber 10. The adjustment rod is moved on the end opposite to the heating system 30 from a positional actuator 8 to control the position, in particular a separation distance A from the first heating surface 15 to the first surface 35o of the first heating surface 15. For pressurization, in particular after bringing the first surface 35o into contact with the first heating surface 15 and bringing the second surface 36o into contact with the second heating surface 19, a force actuator 9, which can apply the higher compressive force that is necessary for bonding, is used. The bonding chamber 10 is sealed by the seals 31, sealing the drive means, relative to the surrounding area.
[0105] The drive means are suspended on a supporting structure 7, comprising of a cover plate and columns supporting the cover plate.
[0106] The process according to the invention is described below based on
[0107] In a first step according to the invention in accordance with
[0108] In a second step according to the invention in accordance with
[0109] In addition, attention must be paid that the substrate stack 14 is loaded and positioned as centrically as possible to the loading pins 21 in order to prevent sliding or slipping.
[0110] In a third step according to the invention in accordance with
[0111] In a fourth step according to the invention in accordance with
[0112] In a fifth step according to the invention in accordance with
[0113] The heating is done by heat output produced by the heating systems 26, 30 and released over the heating surfaces 15, 19 as radiation heat 17.
[0114] The idea according to the invention is shown in particular in this process step. By the symmetrical positioning of the substrate stack 14, the temperature fields above and below the substrate stack 14 can be set in a fully equivalent manner, provided that the two heating systems 26, 30 are controlled with the same output and the same parameters and the pressure plates 25, 29 have the same or at least very similar properties and geometries/dimensions.
[0115] The substrate stack 14 is in particular not limited over the entire surface by a frictional force in its radial thermal expansion, but rather rests only peripherally on the loading pins 21. As a result, it can expand almost free-floating symmetrically, without stresses or bulges being caused.
[0116] A further significant advantage is that the contact of the two substrates 35, 36 of the substrate stack 14 with two heating surfaces 15, 19 is avoided at least during the heating process.
[0117] In a sixth step according to the invention in accordance with
[0118] In order to keep the separation distance A between the substrate stack 14 and the first heating surface 15 equal to the separation distance B between the substrate stack 14 and the second heating surface 19, the first heating surface is moved at twice the speed of the loading pins 21. Another speed profile would also be conceivable, however, in order to produce a specific separation function and thus temperature function on the substrate stack and thus an at least partially asymmetrical approaching.
[0119] According to the invention, a reversal in which the first heating surface 15 is statically designed and the loading pins 21 as well as the second heating surface 19 move in the direction of the first heating surface 15 would also be conceivable.
[0120] In a special embodiment, an in particular identically quick, reverse movement of the two heating surfaces 15, 19 in the case of static loading pins 21 would also be conceivable.
[0121] In a seventh step according to the invention in accordance with
[0122] The bonding system 6 can now be flushed with gas.
[0123] Preferably, the gas is introduced by lines within the second pressure plate 25 and/or first pressure plate 29 and is distributed when using a first pressure plate 29 and/or second pressure plate 30 with studs 37 or an additional studded pressure plate 42, 42′, each applied on the pressure plates, between the studs 37 in the flow channels 32.
[0124] Gas that is fed between the studs 37 can be held up by an arm 40 that is located on the studs 37 on the sides of the pressure plate 25, 29 and that extends over the entire radial side area. The arm seals in particular in a positive manner with the substrate 35, 36 to be processed on its peripheral side.
[0125] In addition, it is conceivable to provide the arm 40 with a passage 41 that makes possible a controlled leakage of the excess gas from the studded surface. The passage 41 is advantageously smaller than 10 μm in diameter, preferably smaller than 7 μm, and more preferably smaller than 5 μm.
[0126] If no studs 37 or studded pressure plates 42, 42′ are used, the gas is distributed by the existing surface roughness of the heating surfaces 15, 19, which replaces the studs 37.
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[0128] Preferably, the studded pressure plates 42, 42′ in each case have at least 50, in particular regularly- and/or equally-distributed, studs 37, more preferably in each case at least 100, more preferably in each case at least 200, and more preferably in each case at least 400.
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[0130] The separation distances A and B are reduced to zero, so that contact exists between heating surfaces 15, 19 of the studded pressure plates 42, 42′ and the surfaces 35o, 36o.
LIST OF REFERENCE SYMBOLS
[0131] 1 Alignment system [0132] 2 Valves [0133] 4, 4′ Vacuum transfer chamber [0134] 5 Vacuum transfer section [0135] 6 Bonding system [0136] 6o Chamber opening [0137] 6s Slot [0138] 7 Supporting structure [0139] 8 Positional actuator [0140] 9 Force actuator [0141] 10 Bonding chamber, in particular vacuum chamber [0142] 11 Attachments [0143] 14 Substrate stack [0144] 15, 15′ First heating surface [0145] 16 Pump [0146] 17 Radiation heat [0147] 18 Receiving system, in particular substrate base [0148] 19, 19′ Second heating surface [0149] 20 Seals [0150] 21 Loading pins [0151] 21p Adjustment plate [0152] 22 Adjustment drive, in particular loading pin actuator [0153] 23 Supporting structure [0154] 24 Lock drive [0155] 25 Second pressure plate [0156] 26 Second, in particular lower, heating system [0157] 27 Valve [0158] 28 Lock seals [0159] 29 First pressure plate [0160] 30 First, in particular upper, heating system [0161] 31 Seals [0162] 32 Flow channels [0163] 34 Robot, in particular process robot [0164] 35 First, in particular upper, substrate [0165] 35k First contact surface [0166] 35o First surface [0167] 36 Second, in particular lower, substrate [0168] 36k Second contact surface [0169] 36o Second surface [0170] 37 Studs [0171] 38, 38′ Unit, in particular vacuum cluster, preferably high-vacuum cluster [0172] 39 Locks [0173] 40 Arm [0174] 41 Passage [0175] 42, 42′ Studded pressure plate [0176] A Separation distance [0177] B Separation distance [0178] E Base plane [0179] H Stud height