BAW RESONATOR WITH COIL INTEGRATED IN HIGH IMPEDANCE LAYER OF BRAGG MIRROR OR IN ADDITIONAL HIGH IMPEDANCE METAL LAYER BELOW RESONATOR

Abstract

It is proposed to enhance the bandwidth of a SMR BAW resonator (TE,PL,BE) by circuiting it with a planar coil (WG1, WG2) that is realized in a high impedance layer (HI) of the Bragg mirror (BM) or in an additional metal layer below the Bragg mirror.

Claims

1. A bulk acoustic wave (BAW) resonator of a solidly mounted resonator (SMR) type, the BAW resonator comprising: a substrate, a Bragg mirror, a bottom electrode, a piezoelectric layer and a top electrode; wherein the Bragg mirror comprises alternating mirror layers of high acoustic impedance and low acoustic impedance where at least two high impedance layers are present; wherein a first planar coil is formed from one of the high impedance mirrors layer or from an additional metal layer arranged between the substrate and a low impedance mirror layer; and wherein the planar coil is electrically coupled to the resonator.

2. The BAW resonator of claim 1: wherein the coil is formed from an additional high impedance layer; wherein the additional high impedance layer and the high impedance mirror layers comprise the same material; and wherein high impedance layers are embedded between dielectric low-impedance layers.

3. The BAW resonator of claim 1, further comprising: two additional metal layers with a respective first or second planar coil formed therein, wherein the first and second planar coil are circuited in series with each other.

4. The BAW resonator of claim 1: wherein the material of the high impedance layers comprises a metal chosen from W, Mo and Al; and wherein the material of the low impedance layers is silicon oxide.

5. The BAW resonator of claim 1: wherein an active resonator region is defined to be a region where bottom electrode, piezoelectric layer and top electrode overlap each other; wherein an active resonator area is the area of the active resonator region when projected normal to the top surface of the substrate; and wherein the planar coil is coupled to the bottom or top electrode by conducting vias guided through the stack of mirror layer at a position that is outside the active resonator area.

6. The BAW resonator of claim 1: wherein the planar coil is a planar winding that has a first end in the middle of the winding and a second end; and wherein the first end is connected by a first via to a first electrode of the resonator and the second end of the planar coil is connected by a second via to the second electrode of the resonator, wherein first and second electrode are selected from bottom electrode and top electrode.

7. The BAW resonator of claim 1: wherein a respective first planar coil and a respective second planar coil are arranged one above the other but are separated by a low impedance layer of a dielectric; and wherein the first and second planar coil are circuited in series with each other by a via connecting the first ends in the middles of the respective windings.

8. The BAW resonator of claim 1, wherein the materials of the electrodes of the resonator are chosen from the group comprising W, Mo or Al.

9. The BAW resonator of claim 1: wherein the coil comprises a first winding formed in a first metal layer and a second winding formed in a second metal layer; wherein the two windings are circuited in series with each other by a via connecting the first ends in the middles of the respective windings; and wherein a first one of the second ends of the series connection of the two windings are connected to the bottom electrode while the second one of the second ends is connected to the top electrode to circuit the coil in parallel to the BAW resonator.

10. The BAW resonator of claim 1, wherein at least one of the high impedance mirror layers is grounded.

Description

[0023] In the following the invention will be explained in more detail with reference to preferred embodiments and the accompanied figures. The figures are schematic only and are not drawn to scale. Hence, neither relative nor absolute geometry parameters can be taken from the figures.

[0024] FIG. 1 shows a BAW resonator with two high impedance windings.

[0025] FIGS. 2A and 2B show different way two interconnect two windings of a 3D coil.

[0026] FIGS. 3A and 3B show two possibilities to interconnect a BAW resonator and an inductor.

[0027] FIG. 4 shows a BAW resonator with a Bragg mirror and two additional metal layers including a winding each.

[0028] FIG. 5 shows a BAW resonator with a Bragg mirror and one additional metal layer including a winding.

[0029] FIG. 6 shows in a diagram the dependency of the inductance of a coil from the spacing and the width of the winding.

[0030] FIG. 7 shows the impedance of a BAW resonator circuited in parallel with an inductor with different values of inductance.

[0031] FIG. 8 shows the impedance of a BAW resonator circuited in series with an inductor with different values of inductance.

[0032] FIG. 1 shows a BAW resonator of the SMR type in a schematic cross section. On a substrate SU e.g. of silicon a Bragg mirror BM is formed. A bottom electrode BE e.g. of Mo, a piezoelectric layer e.g. of AlN that may be doped with e.g. Sc. A top electrode TE e.g. of Mo are formed as a sandwich over the Bragg mirror. The Bragg mirror comprises two high impedance layers HI e.g. of W each embedded in a low impedance layer LI of SiO.sub.2. Hence, five mirror layers or 2.5 mirror layer pairs form the acoustic reflector.

[0033] At least one of the high impedance layers HI comprises a planar coil that is structured as a winding WG in the high impedance layer HI. FIG. 1 shows two windings WG1,WG2 that are circuited in series with each other by a third via V3 that connects the first ends B and C in the respective middle of each winding WG1,WG2. The second end D of the first winding WG1 that is the lower one is connected to the bottom electrode BE by a second via V2. The second end A of the second winding WG2 that is the upper one is coupled to the top electrode TE by a first via V1. Thereby the resonator is circuited in parallel with the planar coils WG1 and WG2 (see also FIG. 3A).

[0034] An active resonator region AR is the region where all three layers of the sandwich overlap each other. Only in the active resonator region AR acoustic waves can be excited and propagate.

[0035] The windings are arranged under the active resonator region AR. Depending on the required inductance of the planar coil the area the windings WG occupy may be smaller than the active resonator region AR, equal or, in an extreme case, may extend over the active resonator region AR. In all cases the high impedance layer HI the windings are formed to function as a mirror layer and have a respective thickness of about a quarter wavelength of the acoustic wave.

[0036] FIGS. 2A and 2B show different ways to interconnect the two windings WG1, WG1 that form a 3D coil. The second winding WG2 is shown to be the top one. It has a first end B and a second end A. The first winding WG1 has a first end C and a second end D.

[0037] When interconnecting both windings of FIG. 2A via their first ends B, C in the respective middles thereof and applying an electric signal over the second ends A, D a magnetic field of a first direction is formed by the first winding and a magnetic field of a second direction opposite to the first direction builds up over and through the second winding. If the two windings WG have the same size the two magnetic fields in the two windings may then partly compensate. A compensated field may be advantageous to avoid magnetic coupling of the windings with other resonators arranged near the regarded resonator.

[0038] Depending on the circuiting with the acoustic resonator (series, parallel) and the needed value of the inductor, it may be decided whether to use “aiding” or “opposing” inductors. Furthermore, the inductor design may depend on size constraints and optimal integration with acoustics.

[0039] FIG. 2B differs from FIG. 2A in the direction of rotation bottom winding that is mirrored relative to FIG. 2A. As a result, the two magnetic fields can build up in parallel.

[0040] FIGS. 3A and 3B show two possibilities to interconnect a BAW resonator RS and inductor IN. In FIG. 3A the BAW resonator RS is circuited in parallel to the inductor IN.sub.P. This complies with the embodiment shown in FIG. 1. FIG. 3B shows a series connection of resonator RS and inductor IN.sub.S.

[0041] FIG. 4 shows another embodiment of a BAW resonator with a Bragg mirror BM and a planar coil arranged below the Bragg mirror comprising two high impedance layers e.g. formed of W and embedded in a layer of low impedance dielectric LI e.g. formed of SiO.sub.2. The inductor comprises two planar coils formed of two interconnected windings WG1, WG2 structured in a first and a second additional metal layer ML. The two additional metal layers ML may also be formed of a high impedance material as W for example but may also comprise any other conductive material. This is because the Bragg mirror already comprises five mirror layers that can reflect the acoustic wave nearly completely. Hence, the additional layers need not act as mirror layers as the acoustic field intensity is very low there.

[0042] The two windings of the two additional metal layers are circuited in series similar as those shown in FIG. 1. In the periphery of the windings the metal layers ML are continuous and hence may form a kind of shielding against EM cross talk induced by the coil when a signal is applied to. Electric connections to one or two electrodes of the resonator are present but are not explicitly shown in the figure. If coupled in series according to FIG. 3B one second end may have a termination that is laterally guided out of the active resonator area to an external terminal.

[0043] FIG. 5 shows an embodiment of a BAW resonator similar to that of FIG. 4 with a Bragg mirror BM and a planar coil arranged as a winding WG below the Bragg mirror. Different to FIG. 4 the inductor comprises one planar coil only formed out of an additional metal layer ML. This embodiment may be suitable for a series circuit of an inductor IN and the BAW resonator RS.

[0044] As the desired widening of the pole zero distance is higher with a parallel inductance having a smaller value only one winding may be sufficient to achieve the desired area that complies with a respective inductance value.

[0045] The diagram of FIG. 6 shows the dependency of the inductance value from the size of the winding. Width as well as spacing of the conductor lines that form the winding are proportional to the inductance. As good approach the inductance is proportional to the area of the winding. In the diagram different ranges of inductance are separated by dashed lines. Sections of the same range of area are separated by continuous lines. It can be shown that an inductance of about 1 nH can be achieved with a winding having an area about 1800 μm.sup.2 or more.

[0046] FIG. 7 shows the influence of a coil on the impedance Z11 of the same BAW resonator when circuited in parallel according to FIG. 3A. The anti-resonance frequency according to the maxima shown in the right side of the diagram is shifted towards higher frequencies depending on the inductance value of the coil. At the same time the resonance frequency that is at about 5 GHz in the embodiment keeps constant. As a result the parallel inductor enhances the pole zero distance PZD. In FIG. 7 the value of inductance is varied between 0.9 and 0.4 nH and the largest shift of nearly about 0.5 GHz is achieved here with the lowest inductance. The impedance of the BAW resonator alone complies with the continuous line of the diagram and has the lowest anti-resonance frequency and hence the smallest PZD.

[0047] FIG. 8 shows the influence of a coil on the impedance Z11 of a BAW resonator when circuited in series according to FIG. 3B. The resonance frequency according to the minima shown in the left side of the diagram is shifted towards lower frequencies depending on the inductance value of the coil. At the same time the anti-resonance frequency keeps constant at about 5.2 GHz. As a result the parallel inductor enhances the pole zero distance PZD. In FIG. 8 the value of inductance is varied between 0.05 and 0.25 nH and the largest shift of more than 0.5 GHz is achieved here with the highest inductance value. Like in FIG. 7 the impedance of the BAW resonator alone complies with the continuous line of the diagram and has the highest resonance frequency and hence the smallest PZD.

[0048] The invention has been shown with reference to selected embodiments only but is not restricted to these embodiments. Materials of the layers, thickness, area and size of the windings may deviate from the depicted or described embodiments. The Bragg mirror may be formed by a deviating number of mirror layers using other high or low impedance materials. The at least one planar coil can be embodied in a high impedance mirror layer or in an additional metal layer below the Bragg mirror. Other substrate materials than silicon may be used too. Besides the shown layers the BAW resonator may comprise further functional layers like thin adhesion supporting layers at the interfaces between two adjacent layers. Depositing at least a passivation layer of e.g. SiN on top of the top electrode according to the art is also self-evident. Further, the BAW resonator may be used in a circuit of several BAW resonators that form a filter circuit in a ladder type arrangement for example. These circuits may be formed by integrally interconnecting neighbored BAW resonators via top electrode or bottom electrode connection which can be done by respective structuring of the electrode layer after deposition.

LIST OF USED REFERENCE SYMBOLS

[0049] RS BAW resonator [0050] BM Bragg mirror layer [0051] HI high-impedance layer [0052] LI low-impedance layer [0053] ML additional metal layer [0054] SU substrate [0055] A,B/C,D first and second end of a winding [0056] WG1,WG2 winding [0057] V1-V3 via [0058] BE bottom electrode [0059] TE top electrode [0060] PL piezoelectric layer [0061] IN.sub.S, IN.sub.P series and parallel inductor