Ultra-high color rendering white light-emitting device with controlled emission spectrum and lighting device containing the same
11127888 · 2021-09-21
Assignee
Inventors
Cpc classification
H01L33/504
ELECTRICITY
H01L33/507
ELECTRICITY
H01L25/075
ELECTRICITY
Y02B20/00
GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
International classification
H01L29/18
ELECTRICITY
H01L33/00
ELECTRICITY
Abstract
The present disclosure provides an ultra-high color rendering white light-emitting device including a semiconductor LED chip that emits a violet wavelength range of light with an emission peak at 380 nm to 430 nm, and a phosphor layer distributed in a transparent resin layer that emits light when excited by an excitation wavelength of the violet LED chip, wherein the phosphor layer includes a first phosphor having an emission peak at 450-470 nm, a second phosphor having an emission peak at 510-550 nm, a third phosphor having an emission peak at 550-590 nm, a fourth phosphor having an emission peak at 630-660 nm, and a fifth phosphor having an emission peak at 660-730 nm, and the ultra-high color rendering white light-emitting device has Ra that is equal to or higher than 98 and less than 100.
Claims
1. An ultra-high color rendering white light-emitting device comprising: a semiconductor LED chip emitting a violet wavelength range of light with an emission peak at 380 nm to 430 nm; and a phosphor layer distributed in a transparent resin layer emitting light when excited by an excitation wavelength of the violet LED chip, wherein the phosphor layer includes: a first phosphor having an emission peak at 450-470 nm, the first phosphor being (Sr,Br).sub.10(PO.sub.4).sub.6Cl.sub.2:Eu; a second phosphor having an emission peak at 510-550 nm, the second phosphor being SiAlON:EU; a third phosphor having an emission peak at 550-590 nm, the third phosphor being (Ba,Sr)Si.sub.2(O,Cl).sub.2N.sub.2:Eu; a fourth phosphor having an emission peak at 630-660 nm, the fourth phosphor being CaAlSi (ON).sub.2:Eu; and a fifth phosphor having an emission peak at 660-730 nm, the fifth phosphor being CaAlSiN.sub.2:Eu, wherein a weight ratio of the first phosphor, the second phosphor, the third phosphor, the fourth phosphor and the fifth phosphor is 12.3 : 1.0 : 1.0 : 5.0 : 0.3, and wherein the correlated color temperature is 4477K and the ultra-high color rendering white light-emitting device has a general color rendering index Ra that is 99, a special color rendering index Ri that is 94 and for R9 (red) and 98 for R12 (blue), and emission efficiency that is equal to or higher than 80 lm/W.
2. The ultra-high color rendering white light-emitting device of claim 1, wherein in the emission spectrum of each correlated color temperature of 2700K to 6500K, the correlated color temperature has a proportional relationship with the intensity ratio of the red emission intensity (R) of 630 nm and the blue emission intensity (B) of 455 nm .
3. The ultra-high color rendering white light-emitting device of claim 1, wherein in the ultra-high color rendering white light-emitting device, a color temperature Tc based on an intensity ratio of 630 nm red emission intensity R and 455 nm blue emission intensity B in an emission spectrum of each color temperature of 2700K-6500K satisfies the following (Equation 1):
Tc(K)=3700(B/R)+1800. (Equation 1)
4. The ultra-high color rendering white light-emitting device of claim 1, wherein the ultra-high color rendering white light-emitting device has a continuous emission spectrum in a visible wavelength range of 430 nm to 630 nm, and a straight-line or uniform spectrum distribution.
5. The ultra-high color rendering white light-emitting device of claim 1, wherein the ultra-high color rendering white light-emitting device has a continuous emission spectrum in a visible wavelength range of 430 nm to 630 nm in a color temperature range 4500K or above, a percent of decrease of spectrum of less than 10% with the increasing wavelength, and a general color rendering index Ra of 98-100.
6. The ultra-high color rendering white light-emitting device of claim 1, wherein the ultra-high color rendering white light-emitting device has a continuous emission spectrum in a visible wavelength range of 430 nm to 630nm in a color temperature range of less than 4500K, a percent of increase of spectrum of less than 50% with the increasing wavelength, and a general color rendering index Ra of 98-100.
7. A white light-emitting module containing an ultra-high color rendering white light-emitting device comprising: a semiconductor LED chip emitting a violet wavelength range of light with an emission peak at 380 nm to 430 nm; and a phosphor layer distributed in a transparent resin layer emitting light when excited by an excitation wavelength of the violet LED chip, wherein the phosphor layer includes: a first phosphor having an emission peak at 450-470 nm, the first phosphor being (Sr,Br).sub.10(PO.sub.4).sub.6Cl.sub.2:Eu; a second phosphor having an emission peak at 510-550 nm, the second phosphor being SiAlON:EU; a third phosphor having an emission peak at 550-590 nm, the third phosphor being (Ba,Sr)Si.sub.2(O,Cl).sub.2N.sub.2:Eu; a fourth phosphor having an emission peak at 630-660 nm, the fourth phosphor being CaAlSi (ON).sub.2:Eu; and a fifth phosphor having an emission peak at 660-730 nm, the fifth phosphor being CaAlSiN.sub.2:Eu, wherein a weight ratio of the first phosphor, the second phosphor, the third phosphor, the fourth phosphor and the fifth phosphor is 12.3 : 1.0 : 1.0 : 5.0 : 0.3, and wherein the correlated color temperature is 4477K and the ultra-high color rendering white light-emitting device has a general color rendering index Ra that is 99, a special color rendering index Ri that is 94 for R9 (red) and 98 for R12 (blue), and emission efficiency that is equal to or higher than 80 lm/W.
8. The white light-emitting module of claim 7, wherein the white light-emitting module contains two or more ultra-high color rendering white light-emitting devices having different color temperatures.
Description
BRIEF DESCRIPTION OF THE DRAWINGS
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MODE FOR CARRYING OUT THE INVENTION
(9) Hereinafter, the preferred embodiments of the present disclosure are described in detail. In describing the present disclosure, when it is deemed that a certain detailed description of relevant known technology renders the subject matter of the present disclosure ambiguous, the detailed description is omitted herein. Throughout the specification, it should be understood that when an element is referred to as “including” a component, it does not preclude the presence of other component and may further include other component unless the context clearly indicates otherwise.
(10) Various modifications may be made to the present disclosure and the present disclosure may have many embodiments, and particular embodiments will be illustrated and specifically described in the detailed description. However, this is not intended to limit the present disclosure to particular embodiments, and it should be understood that the present disclosure covers all changes, equivalents or substituents included in the spirit and technical scope of the present disclosure.
(11) The terminology used herein is only for the purpose of describing particular embodiments, but not intended to be limiting of the present disclosure. As used herein, the singular forms are intended to include the plural forms as well, unless the context clearly indicates otherwise. It should be understood that the term “comprises” or “includes” when used in this specification, specifies the presence of stated features, integers, steps, operations, elements, components or their combination, but does not preclude the presence or addition of one or more other features, integers, steps, operations, elements, components or their combination.
(12) The present disclosure relates to an ultra-high color rendering white light-emitting device including a semiconductor LED chip that emits a violet wavelength range of light with an emission peak at 380 nm to 430 nm and a phosphor layer distributed in a transparent resin layer that emits light when excited by an excitation wavelength of the violet LED chip, wherein the phosphor layer includes a first phosphor having an emission peak at 450-470 nm, a second phosphor having an emission peak at 510-550 nm, a third phosphor having an emission peak at 550-590 nm, a fourth phosphor having an emission peak at 630-660 nm, and a fifth phosphor having an emission peak at 660-730 nm.
(13) The semiconductor LED chip preferably uses a GaN-based semiconductor LED chip as an excitation chip of the emission half-width of 30 nm having the center wavelength at 405 nm. In this instance, the semiconductor LED chip may have an emission peak at 380 nm to 430 nm, and external quantum efficiency is preferably 50% or above. When the emission peak is outside the above range, it cannot have the center wavelength at 405 nm and it is difficult to emit white light, and when the quantum efficiency is less than 50%, the emission efficiency reduces. Additionally, the light-emitting LED may additionally include various structures (electrode structure, reflection structure, and inverted flip chip structure) for extracting light emitted from the light emitting layer in a larger amount outside.
(14) The light-emitting device of the present disclosure contains five types of phosphors, and preferably the following phosphors, each of which wavelength is converted to the blue, green, yellow, red and deep red ranges when excited by light emission from the semiconductor LED chip.
(15) The first phosphor is blue phosphor, and preferably blue phosphor that can be excited in the wavelength range of 380-430 nm, and has an emission peak at 450-470 nm, and preferably 460 nm, and has a weight median diameter of 15-20 μm.
(16) The second phosphor is green phosphor, and preferably green phosphor that can be excited in the wavelength range of 380-430 nm, and has an emission peak at 510-550 nm, and preferably 520 nm, and has a weight median diameter of 20-25 μm.
(17) The third phosphor is yellow phosphor, and preferably yellow phosphor that can be excited in the wavelength range of 380-430 nm, and has an emission peak at 550-590 nm, and preferably 580 nm, and a weight median diameter of 15-20 μm.
(18) The fourth phosphor is red phosphor, and preferably red phosphor that can be excited in wavelength range of 380-430 nm, and has an emission peak at 630-660 nm, and preferably 630 nm, and a weight median diameter of 15-20 μm.
(19) The fifth phosphor is deep red phosphor, and preferably deep red phosphor that can be excited in the wavelength range of 380-430 nm, and has an emission peak at 660-730 nm, and preferably 660 nm, and the weight median diameter of 15-20 μm.
(20) Additionally, the amount of phosphors used in the light-emitting device of the present disclosure can be appropriately selected and used to satisfy the light-emitting device of the present disclosure, but a weight ratio the first phosphor, the second phosphor, the third phosphor, the fourth phosphor and the fifth phosphor may be 7.3-24.0:1.0:0.4-10:4.6-14.0:0.2-0.6. When the phosphors are outside the above ratio, it is impossible to obtain sufficient emission properties.
(21) The light emitting unit of the light-emitting device of the present disclosure contains the phosphors and transparent resin as an encapsulant. That is, the encapsulant preferably includes transparent resin having sufficient transmittance and durability of excitation light (peak wavelength 380-430 nm) from the semiconductor LED device, and more preferably silicone resin.
(22) The amount of the phosphors included in the light emitting unit is preferably 4 wt % to 70 wt % of the total weight of the light emitting unit. Here, the weight of the light emitting unit refers to the sum of the total weight of the phosphors included in the light emitting unit, the weight of silicone resin as the encapsulant, and the weight of an additive such as silica powder (SiO.sub.2) added as necessary.
(23) The ultra-high color rendering white light-emitting device may have the general color rendering index Ra that is equal to or higher than 98 and less than 100, and the special color rendering index Ri that is equal to or higher than 94 and less than 100 for each of R9 (red) and R12 (blue). When each color rendering index does not achieve the above range, color rendition reduces and desired white may not be produced. Additionally, the emission efficiency of the white light-emitting device may be equal to or higher than 80 lm/W. When the emission efficiency is less than 80 lm/W, the power amount necessary for light emission increases, and due to light emission, heat is generated too much and the product quality reduces.
(24) In the ultra-high color rendering white light-emitting device, the color temperature Tc based on the intensity ratio of 630 nm red emission intensity R and 455 nm blue emission intensity B in the emission spectrum of each color temperature of 2700K-6500K may satisfy the following (Equation 1).
Tc(K)=3700(B/R)+1800 (Equation 1)
(25) Accordingly, the B/R ratio is linear to Tc, and it may be a guideline in determining an appropriate phosphor ratio of the ultra-high color rendering white device by adjusting the emission intensity of Blue and Red, and there may be an effect in reducing the cost and time required to obtain accurate color temperature and optical properties. Additionally, outside the corresponding computation formula, it is determined that it is difficult to implement a violet excitation ultra-high color rendering white LED.
(26) The ultra-high color rendering white light-emitting device may have a continuous emission spectrum in the visible wavelength range of 430 nm to 630 nm, and a straight-line or uniform spectrum distribution. Failure to have a continuous emission spectrum in the visible wavelength range of 430 nm to 630 nm or a straight-line or uniform spectrum distribution does not achieve ultra-high color rendition required by the present disclosure. Additionally, its analysis for each color temperature is as below.
(27) The ultra-high color rendering white light-emitting device may have a continuous emission spectrum in the visible wavelength range of 430 nm to 630 nm in the color temperature range of 4500K or above, and the percent of increase or decrease of spectrum of less than 10% with the increasing wavelength (see
(28) The ultra-high color rendering white light-emitting device may have a continuous emission spectrum in the visible wavelength range of 430 nm to 630 nm in the color temperature range of less than 4500K, the percent of increase of spectrum of less than 50% with the increasing wavelength (see
(29) The present disclosure also provides a white light-emitting module containing the ultra-high color rendering white light-emitting device.
(30) The white light-emitting module may contain two or more ultra-high color rendering white light-emitting devices having different color temperatures. In the case of light emission by a combination of two or more ultra-high color rendering white light-emitting devices having different color temperatures as described above, it is possible to manufacture a white LED that can emit white light over a wider range of color temperatures.
(31) Hereinafter, the preferred embodiments of the present disclosure will be described in sufficient detail for those having ordinary skill in the corresponding field to easily practice the present disclosure with reference to the accompanying drawings. Additionally, in describing the present disclosure, when it is deemed that a certain detailed description of relevant known functions or known elements unnecessarily makes the subject matter of the present disclosure ambiguous, its detailed description is omitted herein. Additionally, certain features depicted in the drawings are exaggerated or reduced or simplified for easiness of description, and the drawings and their elements are not necessarily shown in exact scale. However, those skilled in the art will easily understand these details.
EXAMPLE
(32) A white device was manufactured using the following materials as a semiconductor LED chip, phosphor materials and an encapsulant, and evaluation was conducted.
(1) Semiconductor LED Chip
(33) A semiconductor LED chip was used for a light emitting layer of InGaN/GaN multiple quantum well structure having the peak wavelength of 405 nm and the half-width of 30 nm. It is a rectangular shape of 520 μm×390 μm.
(34) (2) Encapsulant
(35) Silicone resin and silica powder (SiO.sub.2) as an anti-settling agent were used.
(36) (3) Phosphors
(37) For phosphors, the following phosphor materials were used:
(38) Blue phosphor: (Sr,Br).sub.10(PO.sub.4).sub.6Cl.sub.2:Eu
(39) Green phosphor: SiAlON:EU
(40) Yellow phosphor: (Ba,Sr)Si.sub.2(O, Cl).sub.2N.sub.2:Eu
(41) Red phosphor: CaAlSi(ON).sub.2:Eu
(42) Deep red phosphor: CaAlSiN.sub.2:Eu
(43) The violet LED having InGaN/GaN multiple quantum well structure was mounted on a LEAD FRAME package having electrode wiring, and encapsulated using a composition containing the phosphors dispersed in the silicone resin according to a blend ratio of each of the five types of phosphors. The mixed phosphor solution was directly coated on the violet LED chip thoroughly using a dispenser.
Experimental example
(44) The emission spectrum measurements were made at room temperature under the condition of 20-65 mA forward current applied. The measurement device used is WITHLIGHT OPI-100 (Korea).
(45) Table 1 shows the values that give the optimum condition in practicing the present disclosure. The photoluminescence (PL) spectrum of the phosphor mixture was measured by determining the mix ratio of the five types of phosphors in advance before coating the phosphors on the semiconductor LED chip, and the spectrum was designed to suit
(46) TABLE-US-00001 TABLE 1 Chromaticity Color coordinate Blend ratio (wt %) of phosphors temperature value Blue Green Yellow Red Deep red (K) x Y phosphor phosphor phosphor phosphor phosphor 2737 0.468 0.430 24.0 1.0 1.0 14.0 0.6 3028 0.436 0.404 7.3 1.0 0.4 4.7 0.2 4477 0.362 0.368 12.3 1.0 1.0 5.0 0.3 5097 0.343 0.352 14.3 1.0 1.0 5.2 0.3 5393 0.335 0.348 13.2 1.0 1.0 4.6 0.3 6488 0.313 0.329 17.2 1.0 1.0 5.6 0.2
(47) As shown in
(48) Additionally,
(49)
Tc=3700(B/R)+1800 (Equation 1)
Emission Spectrum Intensity
(50) As shown in
Emission Spectrum Shape
(51) Describing the shape in the emission spectrum of the white LED having the properties of
(52) As the condition for obtaining ultra-high color rendition, it is important that the spectrum is uniform on the whole. First, as described above,
(53) Accordingly, in designing the spectrum shape exhibiting ultra-high color rendition, it is desirable to disallow any peak of each phosphor to appear. That is, the emission spectrum shape is approximately smooth over the wavelength of 430 nm to 630 nm
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Emission Efficiency
(55) Because fives types of phosphors were mixed as in the above embodiment, despite that a light emission excitation energy loss is predicted due to cascade excitation, the maximum of 110 lm/W could be obtained when the emission efficiency is 65 mA. This is because it is possible to design the optimal ratio and the optimal phosphor combination based on the correlation between the plurality of phosphors through many experiments.
(56) The color rendition was actually measured using a WITHLIGHT OPI-100 measuring device (Korea). Additionally, the color fidelity index Rf and the color gamut index Rg were actually measured using an ASENSETEK LP Pro device (Taiwan).
(57) The following Table 2 shows Ra, R9, R11, R12, R15, Rf and Rg values for each color temperature.
(58) TABLE-US-00002 TABLE 2 CCT(K) Ra R9 R11 R12 R15 Rf Rg 2737 98 95 95 99 98 3028 98 91 96 96 99 96 100 4477 99 94 100 98 100 5097 99 98 97 97 98 97 100 5393 99 96 98 97 99 6488 98 98 98 98 98 98 100
(59) Table 3 shows Ra (1 to 8) and Ri (9 to 15) values at 2737K.
(60) TABLE-US-00003 TABLE 3 Ra R1 R2 R3 R4 R5 R6 R7 R8 98.0 99 99 98 97 98 98 97 98 R9 R10 R11 R12 R13 R14 R15 95 99 95 99 98 98 98
(61) Table 4 shows Ra (1 to 8) and Ri (9 to 15) values at 3028K.
(62) TABLE-US-00004 TABLE 4 Ra R1 R2 R3 R4 R5 R6 R7 R8 98.3 98.8 99.0 98.8 98.2 98.6 96.8 97.6 95.6 R9 R10 R11 R12 R13 R14 R15 91.3 99.2 96.3 95.5 98.6 98.4 98.6
(63) Table 5 shows Ra (1 to 8) and Ri (9 to 15) values at 4477K.
(64) TABLE-US-00005 TABLE 5 Ra R1 R4 R7 R8 99.3 100 100 99 98 R9 R12 R15 94 98 100
(65) Table 6 shows Ra (1 to 8) and Ri (9 to 15) values at 5097K.
(66) TABLE-US-00006 TABLE 6 R1 R2 R3 R5 R6 R7 R9 98 99 99 98 98 99 98 R10 R11 R12 R13 R14 R15 99 97 97 98 99 98
(67) Table 7 shows Ra (1 to 8) and Ri (9 to 15) values at 5393K.
(68) TABLE-US-00007 TABLE 7 Ra R1 R2 R4 R6 R7 R8 99.1 99 99 98 98 99 99 R9 R10 R12 R14 R15 96 99 97 99 99
(69) Table 8 shows Ra (1 to 8) and Ri (9 to 15) values at 6488K.
(70) TABLE-US-00008 TABLE 8 Ra R1 R2 R4 R7 R8 98.3 98 99 98 99 98 R9 R10 R12 R15 98 98 98 98
(71) As previously described, by optimally combining five types of phosphors at a weight ratio as indicated in Table 1 and adjusting an appropriate amount of each of the blue phosphor and the deep red phosphor, the very high Ra and Ri values could be achieved in all color temperatures as shown in Tables 3 to 8. In particular, at 4477K, except R9=94, the other numerical values are significantly high numerical values that have never been reported.
(72) The color fidelity index Rf and the color gamut index Rg of the ultra-high color rendering white light-emitting device were measured, and these numerical values were studied. Rf denotes the average fidelity of light of 99 color samples, and its maximum is 100. Rg denotes the average color gamut, and is 100 when it is equal to the color gamut of reference light.
(73) The color fidelity index Rf and the color gamut index Rg at 3028K, 5097K and 6488K show the results of Table 2.
(74) Rf that denotes a similarity of color illuminated by the white LED light source of the present disclosure and a reference light source is each 96, 97 and 98. As Ra increases, Rf increases, and it is found that they have a proportional relationship.
(75) The color gamut index Rg at 3028K, 5097K and 6488K is all 100, which indicates a complete match to the reference light source. The color gamut index denotes a saturation change of color illuminated by the white LED light source of the present disclosure. 100 indicates a complete match of saturation. The color gamut index above 100 indicates that saturation is high and color is over-saturated in red. In particular, the color gamut is related to visual hue, but theoretically, as the color gamut is closer to 100, the light quality is better.
(76) In particular, the present disclosure implements an excellent ultra-high color rendering white LED lighting device with Ra close to 99, Rf higher than 96 and Rg of 100 in all color temperature ranges by adjusting the content of the first phosphor, the blue phosphor, and adding an appropriate amount of the fifth phosphor, the deep red phosphor.
(77) The white LED light-emitting device having the above properties is an ultra-high color rendering white LED that satisfies all conditions mentioned in the appended claims. In particular, the ultra-high color rendering white LED device and the lighting device of the present disclosure with high chroma properties having all high Ri values is beneficial in color evaluation requiring high precision and the medical lighting field. It is possible to design an ultra-high color rendering white LED light source having color temperatures of more various chromaticity coordinates (x, y) by a combination of white LED devices having each color temperature made by the present disclosure.
(78) The particular embodiments of the present disclosure have been hereinabove described in detail, but this detailed description is just a preferred embodiment to those having ordinary skill in the art, and it will be obvious that the scope of the present disclosure is not limited thereby. Accordingly, the substantial scope of the present disclosure shall be defined by the appended claims and equivalents thereto.