RF ENERGY RADIATION DEVICE

Abstract

An RF energy radiation device includes a cavity in which a heating target object is to be placed, an RF signal generation unit, an RF amplifier, a radiation element, a temperature sensor, and a controller. The RF signal generation unit oscillates an RF signal. The RF amplifier amplifies the RF signal and provides RF energy. The radiation element radiates the RF energy into the cavity. The temperature sensor is disposed in the vicinity of the RF amplifier. The controller controls the RF amplifier so that the RF amplifier adjusts the RF energy output in accordance with the temperature detected by the temperature sensor and a plurality of threshold levels. This aspect can improve the reliability of the device.

Claims

1. A radio frequency (RF) energy radiation device comprising: a cavity in which a heating target object is to be placed; an RF signal generation unit configured to oscillate an RF signal; an RF amplifier configured to amplify the RF signal to provide RF energy; a radiation element configured to radiate the RF energy into the cavity; a temperature sensor disposed in a vicinity of the RF amplifier; and a controller configured to cause the RF amplifier to adjust an output value of the RF energy in accordance with a temperature detected by the temperature sensor and a plurality of threshold levels.

2. The RF energy radiation device according to claim 1, wherein when the temperature detected by the temperature sensor exceeds one of the plurality of threshold levels, the controller causes the RF amplifier to adjust the output value of the RF energy in accordance with the temperature that exceeds the one of the plurality of threshold levels.

3. The RF energy radiation device according to claim 2, wherein when the temperature detected by the temperature sensor exceeds a different one of the plurality of threshold levels that is higher than the one of the plurality of threshold levels, the controller causes the RF amplifier to reduce the output value of the RF energy.

4. The RF energy radiation device according to claim 3, wherein the different one of the plurality of threshold levels varies depending on a rising rate of the temperature detected by the temperature sensor.

5. The RF energy radiation device according to claim 2, wherein when the temperature detected by the temperature sensor exceeds a different one of the plurality of threshold levels that is higher than the one of the plurality of threshold levels, the controller stops the RF signal generation unit.

6. The RF energy radiation device according to claim 1, wherein the plurality of threshold levels comprise: a first threshold level, a second threshold level higher than the first threshold level, and a third threshold level higher than the second threshold level, wherein when the temperature detected by the temperature sensor exceeds the first threshold level, the controller causes the RF amplifier to adjust an output of the RF energy in accordance with the temperature that exceeds the first threshold level, when the temperature detected by the temperature sensor exceeds the second threshold level, the controller causes the RF amplifier to reduce the output of the RF energy, and when the temperature detected by the temperature sensor exceeds the third threshold level, the controller stops the RF signal generation unit.

7. The RF energy radiation device according to claim 6, wherein the second threshold level varies depending on a rising rate of the temperature detected by the temperature sensor.

8. The RF energy radiation device according to claim 1, wherein the RF amplifier is included in a semiconductor device disposed on a substrate in such a manner that a bottom of the semiconductor device is in contact with a base plate, and the temperature sensor is disposed on a side of the substrate opposite to a side on which the semiconductor device is disposed.

9. The RF energy radiation device according to claim 1, wherein the RF amplifier is included in a semiconductor device disposed on a substrate in such a manner that a bottom of the semiconductor device is in contact with a base plate, and the temperature sensor is disposed on a same side of the substrate as a side on which the semiconductor device is disposed.

Description

BRIEF DESCRIPTION OF DRAWINGS

[0012] FIG. 1 is a block diagram of the structure of an RF energy radiation device according to an exemplary embodiment of the present disclosure.

[0013] FIG. 2 is a block diagram of the structure of a power amplifier in the exemplary embodiment.

[0014] FIG. 3 shows the operation sequence of the RF energy radiation device according to the exemplary embodiment.

[0015] FIG. 4 is a graph showing two temperature-rise straight lines of a heating target object in the exemplary embodiment.

[0016] FIG. 5 is a sectional view of a mounting structure of a temperature sensor.

[0017] FIG. 6 is a sectional view of another mounting structure of the temperature sensor.

[0018] FIG. 7 is a block diagram of the structure of an RF energy radiation device known in the art.

DESCRIPTION OF EMBODIMENTS

[0019] An RF energy radiation device according to a first aspect of the present disclosure includes the following components: a cavity in which a heating target object is to be placed, an RF signal generation unit, an RF amplifier, a radiation element, a temperature sensor, and a controller. The RF signal generation unit oscillates an RF signal. The RF amplifier amplifies the RF signal to provide RF energy. The radiation element radiates the RF energy into the cavity. The temperature sensor is disposed in the vicinity of the RF amplifier. The controller causes the RF amplifier to adjust the output of the RF energy in accordance with the temperature detected by the temperature sensor and a plurality of threshold levels.

[0020] In an RF energy radiation device according to a second aspect of the present disclosure, in addition to the first aspect, when the temperature detected by the temperature sensor exceeds one of the plurality of threshold levels, the controller causes the RF amplifier to adjust the output value of the RF energy in accordance with the temperature that exceeds the one of the plurality of threshold levels.

[0021] In an RF energy radiation device according to a third aspect of the present disclosure, in addition to the second aspect, when the temperature detected by the temperature sensor exceeds a different one of the plurality of threshold levels that is higher than the one of the plurality of threshold levels, the controller controls the RF amplifier so that the RF amplifier reduces the output value of the RF energy.

[0022] In an RF energy radiation device according to a fourth aspect of the present disclosure, in addition to the third aspect, the different one of the plurality of threshold levels varies depending on the rising rate of the temperature detected by the temperature sensor.

[0023] In an RF energy radiation device according to a fifth aspect of the present disclosure, in addition to the second aspect, when the temperature detected by the temperature sensor exceeds a different one of the plurality of threshold levels that is higher than the one of the plurality of threshold levels, the controller stops the RF signal generation unit.

[0024] In an RF energy radiation device according to a sixth aspect of the present disclosure, in addition to the first aspect, the plurality of threshold levels include a first threshold level, a second threshold level higher than the first threshold level, and a third threshold level higher than the second threshold level. When the temperature detected by the temperature sensor exceeds the first threshold level, the controller controls the RF amplifier so that the RF amplifier adjusts the output of the RF energy in accordance with the temperature that exceeds the first threshold level. When the temperature detected by the temperature sensor exceeds the second threshold level, the controller controls the RF amplifier so that the RF amplifier reduces the output of the RF energy. When the temperature detected by the temperature sensor exceeds the third threshold level, the controller stops the RF signal generation unit.

[0025] In an RF energy radiation device according to a seventh aspect of the present disclosure, in addition to the sixth aspect, the second threshold level varies depending on the rising rate of the temperature detected by the temperature sensor.

[0026] In an RF energy radiation device according to an eighth aspect of the present disclosure, in addition to the first aspect, the RF amplifier is included in a semiconductor device disposed on a substrate in such a manner that the bottom of the semiconductor device is in contact with a base plate. The temperature sensor is disposed on the side of the substrate opposite to the side on which the semiconductor device is disposed.

[0027] In an RF energy radiation device according to a ninth aspect of the present disclosure, in addition to the first aspect, the RF amplifier is included in a semiconductor device disposed on a substrate in such a manner that the bottom of the semiconductor device is in contact with a base plate. The temperature sensor is disposed on the same side of the substrate as the side on which the semiconductor device is disposed.

[0028] RF energy radiation device 100 according to an exemplary embodiment of the present disclosure will now be described with reference to the drawings.

[0029] FIG. 1 is a block diagram of the structure of RF energy radiation device 100. FIG. 2 is a block diagram of the structure of power amplifier 102a. Power amplifiers 102a and 102b have the same structure, so that power amplifier 102a alone will be described in detail, leaving power amplifier 102b undescribed.

[0030] As shown in FIG. 1, RF energy radiation device 100 includes the following components: oscillators 101a and 101b, power amplifiers 102a and 102b, detectors 103a and 103b, circulators 104a and 104b, terminations 105a and 105b, radiation elements 107a and 107b, and cavity 108.

[0031] Oscillators 101a and 101b each oscillate an RF signal. Power amplifiers 102a and 102b amplify the RF signals oscillated by oscillators 101a and 101b, respectively, and each provide RF power. Detectors 103a and 103b detect the RF power transmitted from RF energy radiation device 100 toward radiation elements 107a and 107b, respectively. Detectors 103a and 103b further detect the RF power transmitted from radiation elements 107a and 107b, respectively, toward RF energy radiation device 100.

[0032] Oscillators 101a and 101b correspond to an RF signal generation unit, oscillators 101a and 101b correspond to an RF amplifier, and detectors 103a and 103b correspond to an RF power detection unit.

[0033] Hereinafter, the RF power transmitted from RF energy radiation device 100 toward radiation elements 107a and 107b will be referred to as a transmitted wave, whereas the RF power transmitted from elements 107a and 107b toward device 100 will be referred to as a reflected wave.

[0034] Circulator 104a transmits the transmitted wave coming from oscillator 101a to radiation element 107a, and transmits the reflected wave coming from radiation element 107a to termination 105a. Similarly, circulator 104b transmits the transmitted wave coming from oscillator 101b to radiation element 107b, and transmits the reflected wave coming from radiation element 107b to termination 105b.

[0035] Terminations 105a and 105b have respective impedances, which become the loads of the reflected waves received from circulators 104a and 104b, respectively.

[0036] Circulators 104a, 104b and terminations 105a, 105b protect oscillators 101a, 101b from the reflected waves caused due to a load fluctuation of a heating target object (e.g., food) when the object is placed in cavity 108. Radiation elements 107a and 107b radiate RF energy into cavity 108.

[0037] RF energy radiation device 100 further includes the following components: temperature sensors 106a, 106b, 106c, and 106d, microprocessor 109, and protection circuit 110.

[0038] Temperature sensors 106a and 106b are disposed near power amplifiers 102a and 102b, respectively, and temperature sensors 106c and 106d are disposed near terminations 105a and 105b, respectively. Microprocessor 109 is a controller for controlling RF energy radiation device 100 in accordance with the temperatures detected by temperature sensors 106a to 106d. Protection circuit 110 operates to protect RF energy radiation device 100 if at least one of the temperatures detected by temperature sensors 106a to 106d exceeds a predetermined value.

[0039] As shown in FIG. 2, power amplifier 102a includes variable attenuator 301, small-signal amplifier 302, and large-signal amplifier 303 (the same holds true for power amplifier 102b).

[0040] Variable attenuator 301 receives the RF signal from oscillator 101a and adjusts the attenuation amount of the RF signal. Small-signal amplifier 302 amplifies the signal outputted from variable attenuator 301 to some extent. Large-signal amplifier 303 amplifies the signal outputted from small-signal amplifier 302 to a desired output of the RF energy.

[0041] The operation and effects of RF energy radiation device 100 with the above-described structure will now be described with reference to FIGS. 3 and 4. FIG. 3 shows the operation sequence of RF energy radiation device 100. FIG. 4 is a graph showing two temperature-rise straight lines of the heating target object used in the present exemplary embodiment.

[0042] Microprocessor 109 causes oscillators 101a and 101b to oscillate an RF signal with an arbitrary frequency. Microprocessor 109 causes power amplifiers 102a and 102b to output RF energy of a target value. The RF energy output is adjusted to the target value by first adjusting the attenuation amount of variable attenuator 301.

[0043] Concerning the transmitted wave, microprocessor 109 adjusts the attenuation amount of variable attenuator 301 so that the RF energy amount is stable even during the operation of RF energy radiation device 100 in accordance with the power values detected by detectors 103a and 103b.

[0044] Concerning the reflected wave, microprocessor 109 controls power amplifiers 102a and 102b so that if at least one of the power values detected by detectors 103a and 103b exceeds a first threshold level, the RF energy output can be reduced to reduce the radiation heat from the heat-generating components corresponding to the temperature exceeding the first threshold level.

[0045] If at least one of the power values detected by detectors 103a and 103b exceeds an allowable level, protection circuit 110 immediately stops RF energy radiation device 100 by mechanical means, thereby protecting device 100. Protection circuit 110 informs microprocessor 109 that RF energy radiation device 100 has been stopped.

[0046] Terminations 105a and 105b are heat-generating components that generate heat when receiving reflected waves. Terminations 105a and 105b have a large temperature rise.

[0047] The efficiency of large-signal amplifier 303 can be reduced by changes in the load due to changes in its physical properties during heating and an increase in ambient temperature of RF energy radiation device 100. As a result, large-signal amplifier 303 generates more heat, thereby increasing the temperatures detected by temperature sensors 106a and 106b.

[0048] Microprocessor 109 stores a first threshold level (e.g., 85° C.), a second threshold level (e.g., 115° C.), and a third threshold level (e.g., 120° C.) shown in FIG. 3. Small-signal amplifier 302, which has a small output power, does not cause a large heat generation, resulting in small temperature rise. This means that the temperature rise in power amplifiers 102a and 102b is largely caused by large-signal amplifier 303.

[0049] If at least one of the temperatures detected by temperature sensors 106a and 106b exceeds the first threshold level, microprocessor 109 controls the attenuation amount D (dB) of variable attenuator 301 minutely using software control so that the RF energy output of power amplifiers 102a and 102b is reduced to reduce the radiation heat from the heat-generating components corresponding to the exceeded temperature. For example, the attenuation amount D can be calculated using semiconductor thermal resistance as shown in formula (1) shown below. This can prevent a temperature rise in power amplifiers 102a and 102b.

D=10×log.sub.10 P.sub.det−10×log.sub.10(P.sub.det−P.sub.down)  (1)

[0050] where

[0051] P.sub.det(W): the power value of transmitted wave

[0052] P.sub.down(W): (detected temperature (° C.)−85(° C.))×1/Z

[0053] Z(° C./W): semiconductor thermal resistance between the junction and the case

[0054] If the ambient temperature increases greatly to exceed the second threshold level, microprocessor 109 causes variable attenuator 301 to reduce the RF energy output greatly, thereby reducing the temperature greatly.

[0055] FIG. 4 is a graph showing the second threshold level changes in accordance with the rising rate of the temperatures detected by temperature sensors 106a to 106d. When temperature rising rate is high as shown in FIG. 4, the temperature rise value in one cycle of the software control is large.

[0056] Therefore, the second threshold level is set lower when the temperature rising rate is high than when the temperature rising rate is low. This enables reducing the RF energy output before the temperature gets too high during one cycle of the software control.

[0057] The second threshold level is automatically set to a level capable of preventing the hardware from stopping the device, considering the rising rate of the temperatures detected by temperature sensors 106a to 106d and the response time (time lag) when the hardware stops RF energy output.

[0058] If any of the temperatures rises suddenly to exceed the third threshold level due to a mounting failure such as solder cracking, protection circuit 110 immediately stops RF energy radiation device 100 by using mechanical means, thereby protecting device 100.

[0059] As described above, according to the present exemplary embodiment, temperature sensors 106a and 106b are disposed near power amplifiers 102a and 102b, respectively, and temperature sensors 106c and 106d are disposed near terminations 105a and 105b, respectively. The temperatures of these heat-generating components are monitored to control the RF energy output, thereby reducing the temperature rise in power amplifiers 102a, 102b and terminations 105a, 105b. This results in extending the life of the device.

[0060] FIG. 5 is a sectional view of a mounting structure of temperature sensor 106a.

[0061] The mounting structure of temperature sensor 106a will now be described as follows. The mounting structure of temperature sensors 106b to 106d will be omitted because it is the same as that of temperature sensor 106a.

[0062] As shown in FIG. 5, in this mounting structure, semiconductor device 202 including large-signal amplifier 303 is disposed on substrate 201 in such a manner that the bottom of semiconductor device 202 is in contact with base plate 203. Temperature sensor 106a is disposed on the side of substrate 201 opposite to the side on which semiconductor device 202 is disposed.

[0063] Temperature sensor 106a is disposed on the solder side of substrate 201 so as to be in contact with base plate 203 made of a thermally conductive material such as copper or aluminum. More specifically, temperature sensor 106a is disposed in an area with a low thermal resistance between the bottom of semiconductor device 202, which is a heat-generating component, and temperature sensor 106a.

[0064] This mounting structure enables detecting approximately the actual temperatures of the heat-generating components, and correcting the detected temperature easily because of the low thermal resistance. Thus, the temperatures can be detected with high precision and high response.

[0065] FIG. 6 is a sectional view of another mounting structure of temperature sensor 106a. As shown in FIG. 6, in this mounting structure, semiconductor device 202 including large-signal amplifier 303 is disposed on substrate 201 in such a manner that the bottom of semiconductor device 202 is in contact with base plate 203. Temperature sensor 106a is disposed on the same side of substrate 201 as the side on which semiconductor device 202 is disposed. Substrate 201 has through-hole 204 near semiconductor device 202.

[0066] This mounting structure enables, in the same manner as the mounting structure shown in FIG. 5, detecting approximately the actual temperatures of the heat-generating components, thereby precisely controlling RF energy radiation device 100.

INDUSTRIAL APPLICABILITY

[0067] The RF energy radiation device according to the present disclosure is applicable to thawing apparatuses, heating cookers, dryers, etc.

REFERENCE MARKS IN THE DRAWINGS

[0068] 100 RF energy radiation device [0069] 101a, 101b oscillator [0070] 102a, 102b power amplifier [0071] 103a, 103b detector [0072] 104a, 104b circulator [0073] 105a, 105b termination [0074] 106a, 106b, 106c, 106d temperature sensor [0075] 107a, 107b radiation element [0076] 108 cavity [0077] 109 microprocessor [0078] 110 protection circuit [0079] 201 substrate [0080] 202 semiconductor device [0081] 203 base plate [0082] 204 through-hole [0083] 301 variable attenuator [0084] 302 small-signal amplifier [0085] 303 large-signal amplifier