Application structure of gallium nitride field-effect transistor in dimmer circuit

Abstract

An application structure of a gallium nitride field-effect transistor in a dimmer circuit is disclosed, including an LED module, a power supply circuit, a current holding circuit, and a drive circuit. The power supply circuit includes a power supply, a dimmer unit, and a rectifier circuit. The current holding circuit is electrically connected to the rectifier circuit, includes a first control switch, a capacitor capable of charging and discharging, and a plurality of resistors whose current is set, and is configured to provide a stable current to the dimmer unit. The first control switch is provided with a gallium nitride field-effect transistor. The drive circuit is electrically connected to the current holding circuit, includes a second control switch, a screen flicker prevention chip electrically connected to the LED module, and a plurality of resistors whose current is set, and is configured to stably drive the LED module to emit light. The second control switch is provided with a gallium nitride field-effect transistor.

Claims

1. An application structure of a gallium nitride field-effect transistor in a dimmer circuit, comprising: an LED module; a power supply circuit, comprising a power supply, a dimmer unit, and a rectifier circuit that are electrically connected; a current holding circuit, electrically connected to the rectifier circuit, comprising a first control switch, a capacitor capable of charging and discharging, and a plurality of resistors whose current is set, and configured to provide a stable current to the dimmer unit, wherein the first control switch is provided with a gallium nitride field-effect transistor; and a drive circuit, electrically connected to the current holding circuit, comprising a second control switch, a screen flicker prevention chip electrically connected to the LED module, and a plurality of resistors whose current is set, and configured to stably drive the LED module to emit light, wherein the second control switch is provided with a gallium nitride field-effect transistor.

2. The application structure of the gallium nitride field-effect transistor in the dimmer circuit according to claim 1, wherein the first control switch and the second control switch separately comprise two gallium nitride field-effect transistors.

3. The application structure of the gallium nitride field-effect transistor in the dimmer circuit according to claim 1, wherein the drive circuit is further electrically connected to a rectifier diode and a plurality of capacitors.

Description

BRIEF DESCRIPTION OF THE DRAWINGS

(1) FIG. 1 is a schematic diagram of a circuit according to a first embodiment of the present invention; and

(2) FIG. 2 is a schematic diagram of a circuit according to a second embodiment of the present invention.

DESCRIPTION OF THE EMBODIMENTS

(3) FIG. 1 shows a first embodiment of an application structure of a gallium nitride field-effect transistor in a dimmer circuit according to the present invention. The application structure includes an LED module 4, a power supply circuit 1, a current holding circuit 2, and a drive circuit 3.

(4) The power supply circuit 1 includes a power supply 11, a dimmer unit 12, and a rectifier circuit 13 that are electrically connected.

(5) The current holding circuit 2 is electrically connected to the rectifier circuit 13, includes a first control switch 21, a capacitor C4 capable of charging and discharging, and a plurality of resistors R1, R4, R6, and R7 whose current is set, and is configured to provide a stable current to the dimmer unit 12. The first control switch 21 includes two gallium nitride field-effect transistors 211, to increase holding currents, and reduce discontinuous conduction.

(6) The drive circuit 3 is electrically connected to the current holding circuit 2, includes a second control switch 31, a screen flicker prevention chip 32 electrically connected to the LED module 4, and a plurality of resistors R2, R3, and R5 whose current is set, and is configured to stably drive the LED module 4 to emit light. The second control switch 31 includes two gallium nitride field-effect transistors 311, to increase holding currents, and reduce discontinuous conduction.

(7) The drive circuit 3 is further electrically connected to a rectifier diode D2 and a plurality of capacitors C1 and C2.

(8) Based on the foregoing circuit structure, the present invention can cooperate with a triac dimmer (TRIAC dimmer) to achieve a stable current, so that the LED module emits light without flickers.

(9) Further, FIG. 2 shows a second embodiment of the present invention. Based on the circuit structure in the first embodiment, in a circuit structure in this embodiment, a position for disposing a capacitor C3 is adjusted in the current holding circuit 2, to cooperate with a different type of dimmer unit 12′. In this way, effects same as those in the first embodiment can still be achieved.