X-ray detecting panel for multi signal detection and X-ray detector thereof

Abstract

An X-ray detecting panel for multi signal detection and an X-ray detector thereof are disclosed. In accordance with one embodiment, the X-ray detecting panel for multi signal detection may include a plurality of unit pixels, the unit pixel including: a photodiode for generating an electrical signal by radiated light; and a thin film transistor for processing the electrical signal generated in the photodiode, wherein the unit pixel may include at least two photodiodes or at least two thin film transistors. In accordance with the present embodiment, a plurality of photodiodes is provided in the unit pixel in a single X-ray detector, thus it is possible that an X-ray image is output using a signal output from each photodiode, and multi signals are detected using the single X-ray detector.

Claims

1. An X-ray detecting panel for multi signal detection comprising a plurality of unit pixels, the unit pixel comprising: at least one photodiode generating an electrical signal by radiated light; and at least two thin film transistors processing the electrical signal generated in the at least one photodiode, wherein the at least two thin film transistors have different electrical characteristics from each other.

2. The X-ray detecting panel for multi signal detection of claim 1, wherein the unit pixel comprises at least two photodiodes having different photoelectric characteristics from each other.

3. The X-ray detecting panel for multi signal detection of claim 2, wherein the at least two photodiodes have different materials and thicknesses from each other, or have different fill factors from each other.

4. The X-ray detecting panel for multi signal detection of claim 2, wherein the at least two thin film transistors are configured to have different channel resistances, on-currents, off-currents, channel lengths, channel widths, or threshold voltages from each other.

5. The X-ray detecting panel for multi signal detection of claim 2, wherein one sides of the at least two photodiodes are electrically connected to a bias line, and other sides of the at least two photodiodes are electrically connected to source terminals of the at least two thin film transistors, respectively, and wherein drain terminals of the at least two thin film transistors are connected to at least two readouts so as to output a signal generated in each of the at least two photodiodes as image information.

6. The X-ray detecting panel for multi signal detection of claim 1, wherein the at least two thin film transistors are configured to have different channel resistances, on-currents, off-currents, channel lengths, channel widths, or threshold voltages from each other.

7. The X-ray detecting panel for multi signal detection of claim 1, wherein the unit pixel comprises a single photodiode, the photodiode having one side electrically connected to a bias line and the other side electrically connected to source terminals of the at least two thin films transistors, and wherein drain terminals of the at least two thin film transistors are connected to at least two readouts so as to output signals generated in the photodiode as image information.

8. An X-ray detecting panel for multi signal detection comprising a plurality of unit pixels, the unit pixel comprising: at least two photodiodes each generating an electrical signal by radiated light; and a single thin film transistor processing the electrical signals generated in the at least two photodiodes, wherein the at least two photodiodes have different photoelectric characteristics from each other, wherein each of the at least two photodiodes is electrically connected to a bias line at one side and electrically connected to a source terminal of the single thin film transistor at the other side, and wherein a drain terminal of the single thin film transistor is connected to a readout.

9. An X-ray detecting panel for multi signal detection comprising a plurality of unit pixels, the unit pixel comprising: a first thin film transistor directly detecting radiated X-rays as an electrical signal and processing the detected electrical signal; and a second thin film transistor directly detecting the radiated X-rays as an electrical signal and processing the detected electrical signal, wherein the first and second thin film transistors have different electrical characteristics from each other.

10. The X-ray detecting panel for multi signal detection of claim 9, wherein the first and second thin film transistors are configured to have different channel resistances, on-currents, off-currents, channel lengths, channel widths, or threshold voltages from each other.

11. The X-ray detecting panel for multi signal detection of claim 9, wherein source terminals of the first and second thin film transistors are electrically connected to a common line where X-rays are detected as electrical signals, and wherein drain terminals of the first and second thin film transistors are connected to first and second readouts to output electrical signals as which X-rays are detected as image information.

12. An X-ray detector for multi signal detection, comprising: an X-ray detecting panel for multi signal detection comprising a plurality of unit pixels, the unit pixel comprising: at least one photodiode generating an electrical signal by radiated light; and at least two thin film transistors processing the electrical signal generated in the at least one photodiode, and wherein the at least two thin film transistors have different electrical characteristics from each other.

13. The X-ray detector for multi signal detection of claim 12, wherein the unit pixel comprises at least two photodiodes having different photoelectric characteristics from each other.

14. The X-ray detector for multi signal detection of claim 13, wherein the at least two photodiodes have different materials and thicknesses from each other, or may have different fill factors from each other.

15. The X-ray detector for multi signal detection of claim 13, wherein one sides of the at least two photodiodes are electrically connected to a bias line, and other sides of the photodiodes are electrically connected to source terminals of the at least two thin film transistors, respectively, and wherein drain terminals of the at least two thin film transistors are connected to a plurality of readouts so as to output a signal generated in each of the at least two photodiodes as image information.

16. The X-ray detector for multi signal detection of claim 12, wherein the at least two thin film transistors are configured to have different channel resistances, on-currents, off-currents, channel lengths, channel widths, or threshold voltages, respectively.

17. An X-ray detector for multi signal detection comprising: an X-ray detecting panel for multi signal detection comprising a plurality of unit pixels, the unit pixel comprising: a first thin film transistor directly detecting radiated X-rays as an electrical signal and processing the detected electrical signal; and a second thin film transistor directly detecting the radiated X-rays as an electrical signal and processing the detected electrical signal, wherein the first and second thin film transistors have different electrical characteristics from each other.

Description

BRIEF DESCRIPTION OF THE DRAWINGS

(1) The accompanying drawings, which are included to provide a further understanding of the disclosed technology, and are incorporated in and constitute a part of this specification, illustrate exemplary embodiments of the disclosed technology, and together with the description serve to describe the principles of the disclosed technology.

(2) FIG. 1A is a schematic view illustrating an X-ray detector using a conventional single X-ray source.

(3) FIG. 1B is a schematic view illustrating an X-ray detector using conventional multiple X-ray sources.

(4) FIG. 2 is a schematic view illustrating a single X-ray detector using a single X-ray source according to an embodiment of the present disclosure.

(5) FIG. 3 is a pixel circuit diagram illustrating a single X-ray detector according to a first embodiment of the present disclosure.

(6) FIG. 4 is a pixel circuit diagram illustrating a single X-ray detector according to a second embodiment of the present disclosure.

(7) FIG. 5 is a pixel circuit diagram illustrating a single X-ray detector according to a third embodiment of the present disclosure.

(8) FIG. 6 is a pixel circuit diagram illustrating a single X-ray detector according to a fourth embodiment of the present disclosure.

DETAILED DESCRIPTION

(9) Hereinafter, exemplary embodiments of the present disclosure will be described in detail with reference to the accompanying drawings

(10) FIG. 2 is a schematic view illustrating a single X-ray detector using a single X-ray source according to an embodiment of the present disclosure.

(11) Referring to FIG. 2, in accordance with one embodiment of the present disclosure, a single X-ray detector 130 using a single X-ray source includes an X-ray source 110, a filter 120, and the X-ray detector 130.

(12) The X-ray source 110 is an X-ray generator generating and radiating X-rays, and one X-ray source 110 may be provided in this embodiment. In this embodiment, the X-ray source 110 may radiate X-rays having a predetermined energy band. The energy band of radiated X-rays may have a predetermined range, and the filter 120 may be installed in a direction in which the X-ray is radiated.

(13) The filter 120 is disposed to adjust the energy of the X-rays radiated from the X-ray source 110, and may filter X-rays of a particular energy band. The filter 120 may be an additional filter. In this case, a maximum energy radiated from the X-ray source 110 may be controlled by the magnitude of the voltage, and a minimum energy may be controlled by the filter 120. By controlling the minimum energy of the X-rays using the filter 120, an average energy of the radiated X-rays may be increased. In this embodiment, the filter 120 may be the filter 120 formed of a metal such as copper (Cu). Accordingly, this may result in hardening of a beam quality of X-rays to increase the energy band range, and also reducing an exposure dose of an object 140.

(14) The X-ray detector 130, in one embodiment of the present disclosure, may detect dual or multi signals and may be configured as in many embodiments described below.

(15) In the present embodiment, the X-ray detector 130 may be a direct type X-ray detector which directly detects X-rays as electrical signals and an indirect type X-ray detector which converts X-rays into the visible light and detects it using the converted visible light.

(16) In the direct and indirect type X-ray detectors as described above, the X-ray detecting panel included in the X-ray detector 130 may include a large number of image pixels to convert the X-rays into electrical signals. Therefore, in the following embodiments, configurations in each unit pixel will be described in detail.

(17) FIG. 3 is a circuit diagram illustrating a single X-ray detector according to a first embodiment of the present disclosure.

(18) Referring to FIG. 3, in accordance with the first embodiment of the present disclosure, a single X-ray detector 130 may include one thin film transistor TFT and two photodiodes PD1 and PD2 in a single unit pixel.

(19) In this embodiment, the unit pixel as described above may be included in an X-ray detecting panel of the X-ray detector 130, and may detect X-rays and output a signal.

(20) The two photodiodes PD1 and PD2 may have the same photoelectric characteristics each other, but the present disclosure is not limited thereto. In particular, in this embodiment, the two photodiodes PD1 and PD2 may be configured to have different photoelectric characteristics.

(21) The two photodiodes PD1 and PD2 having different photoelectric characteristics each other may be formed of different materials or thicknesses each other so as to generate an electrical signal from radiated light, or may be configured to have different fill factors each other. In this case, a PIN diode, an avalanche photo diode APD, or the like may be respectively used as the photodiodes PD1 and PD2 in this embodiment.

(22) In this embodiment, each of the two photodiodes PD1 and PD2 may be electrically connected to a bias line at one side, and may be connected a source terminal of the thin film transistor TFT at the other side, respectively. A gate terminal of the thin film transistor TFT may be connected to a gate line, and a drain terminal of the thin film transistor TFT may be connected to a readout.

(23) Accordingly, a signal output from the thin film transistor TFT may be extracted through a readout terminal and may be realized as an image through an external electronic device connected to the readout terminal.

(24) In this embodiment, X-rays emitted from the X-ray source 110 may be converted into visible light and radiated onto the two photodiodes PD1 and PD2, respectively, wherein the two photodiodes PD1 and PD2 may generate different electrical signals from the radiated visible light through different photoelectric properties each other. Therefore, each electrical signal output from the two photodiodes PD1 and PD2 may be processed by each of thin film transistors and realized as a different image, respectively. Accordingly, even when the same X-rays are radiated to the object 140 by using one X-ray source 110, an image having sharper contrast with respect to the object 140 may be realized depending on the photoelectric characteristics that can be detected in the two photodiodes PD1 and PD2.

(25) In this embodiment, although two photodiodes PD1 and PD2 are used, more photodiodes may be included in one pixel if necessary.

(26) FIG. 4 is a circuit diagram illustrating a single X-ray detector according to a second embodiment of the present disclosure.

(27) Referring to FIG. 4, in accordance with the second embodiment of the present disclosure, a single X-ray detector 130 may include two thin film transistors TFT1 and TFT2 and one photodiode PD in a single unit pixel. The two thin film transistors TFT1 and TFT2 may have the same electrical characteristics, but the present disclosure is not limited thereto, and may have different electrical characteristics each other. The unit pixel such as above may be included in an X-ray detecting panel of the X-ray detector 130, and may detect X-rays and output a signal

(28) For example, each of the two thin film transistors TFT1 and TFT2 may be configured to have a different channel resistance, a different on-current, a different off-current, a different channel length, a different channel width, and a different threshold voltage so as to process signals generated in the photodiode PD.

(29) In this embodiment, the photodiode PD may be electrically connected to a bias line at one side and may be connected to source terminals of the two thin film transistors TFT 1 and TFT 2 at the other side. Gate terminals of the two thin film transistors TFT1 and TFT2 may be connected to a gate line and drain terminals of the two thin film transistors TFT1 and TFT2 may be connected to two readouts Readout1 and Readout2. Each of readout signals generated in the two thin film transistors TFT1 and TFT2 may be extracted through each readout terminal and may be realized as an image through an external electronic device connected to the readout terminals.

(30) In this embodiment, X-rays emitted from the X-ray source 110 may be converted into visible light and radiated onto the photodiode PD, and electrical signals from the radiated visible light through different photoelectric properties may be generated. The electrical signals output from the photodiode PD in the two thin film transistors TFT1 and TFT2 may be respectively processed by using the electrical characteristics of the two thin film transistors TFT1 and TFT2 to realize different images each other. Therefore, even when the same X-rays are radiated to the object 140 using one X-ray source 110, it is possible to realize an image having a sharper contrast with respect to the object 140 since the electric characteristics processed by the two thin film transistors TFT1 and TFT2 are different.

(31) In this embodiment, although two thin film transistors TFT1 and TFT2 are used, more thin film transistors may be included in one pixel if necessary.

(32) FIG. 5 is a circuit diagram illustrating a single X-ray detector according to a third embodiment of the present disclosure.

(33) Referring to FIG. 5, in accordance with the third embodiment of the present disclosure, a single X-ray detector 130 may include a first thin film transistor TFT1, a second thin film transistor TFT2, a first photodiode PD1 and a second photodiode PD2 in a single image pixel. Although the first thin film transistor TFT1 and the second thin film transistor TFT2 may have the same electrical characteristics, they may have different electrical characteristics. Although the first photodiode PD1 and the second photodiode PD2 may have the same photoelectric characteristics, they may have different photoelectric characteristics in this embodiment.

(34) In this embodiment, the single pixel as described above may be included in an X-ray detecting panel of the X-ray detector 130, and may detect X-rays and output a signal.

(35) For example, each of the first thin film transistor TFT1 and the second thin film transistor TFT2 may be configured to have a different channel resistance, a different on-current, a different off-current, a different channel length, a different channel width, and a different threshold voltage so as to process signals. The first photodiode PD1 and the second photodiode PD2 may be formed of different materials or thicknesses each other so as to generate an electrical signal from radiated light, or may be configured to have different fill factors. In this case, a PIN diode, an avalanche photo diode APD, or the like may be respectively used as the photodiodes PD1 and PD2 in this embodiment.

(36) In this embodiment, each of the first photodiode PD1 and the second photodiode PD2 is electrically connected to a bias line at one side. The other side of the first photodiode PD1 may be electrically connected to a source terminal of the first thin film transistor TFT1. A gate terminal of the first thin film transistor TFT1 may be electrically connected to a gate line, and a drain terminal of the first thin film transistor TFT1 may be electrically connected to a first readout line Readout1.

(37) The other side of the second photodiode PD2 may be electrically connected to a source terminal of the second thin film transistor TFT2. A gate terminal of the second thin film transistor TFT2 may be electrically connected to the gate line, and a drain terminal of the second thin film transistor TFT2 may be electrically connected to a second readout Readout2.

(38) FIG. 6 is a circuit diagram illustrating a single X-ray detector according to a fourth embodiment of the present disclosure.

(39) Referring to FIG. 6, in accordance with the fourth embodiment of the present disclosure, a single X-ray detector 130 may include two thin film transistors TFT1 and TFT2 in a single unit pixel. In this embodiment, the two thin film transistors TFT1 and TFT2 may be applied to an X-ray detecting panel for directly detecting X-rays as an electrical signal. In this case, the unit pixel as described above may be included in the X-ray detecting panel of the X-ray detector 130, and may output the signal by detecting the X-rays in this embodiment.

(40) Two thin film transistors TFT1 and TFT2 directly process X-rays as the electrical signal. The two thin film transistors TFT1 and TFT2 may have the same electrical characteristics, but the present disclosure is not limited thereto, and may have different electrical characteristics each other.

(41) For example, each of the first thin film transistor TFT1 and the second thin film transistor TFT2 may be configured to have a different channel resistance, a different on-current, a different off-current, a different channel length, a different channel width, and a different threshold voltage so as to process electrical signals owing to the X-rays.

(42) In this embodiment, source terminals of the two thin film transistors TFT 1 and TFT 2 may be electrically connected to a common line in which the X-rays are processed as electrical signals. Gate terminals of the two thin film transistors TFT1 and TFT2 may be connected to a gate line and drain terminals of the two thin film transistors TFT1 and TFT2 may be connected to two readouts Readout1 and Readout2, respectively.

(43) Each of readout signals generated in the two thin film transistors TFT1 and TFT2 may be extracted through a readout terminal and may be realized as an image through an external electronic device connected to the readout terminal.

(44) In this embodiment, the X-rays emitted from the X-ray source 110 are detected as electrical signals, and then the detected electrical signals are processed by the two thin film transistors TFT1 and TFT2 through the common line using their respective electrical characteristics, thereby realizing different images each other. Therefore, even when the same X-rays are radiated to the object 140 using one X-ray source 110, it is possible to realize an image having a sharper contrast with respect to the object 140 since the electric characteristics processed by the two thin film transistors TFT1 and TFT2 are different.

(45) In this embodiment, although two thin film transistors TFT1 and TFT2 are used, more thin film transistors may be included in one pixel if necessary.

(46) Although some exemplary embodiments have been described herein, it should be understood by those skilled in the art that these embodiments are given by way of illustration only, and that various modifications, variations, and alterations can be made without departing from the spirit and scope of the present disclosure. Therefore, the scope of the present disclosure should be limited only by the accompanying claims and equivalents thereof.