SHUNT RESISTOR FOR DETECTING THE STATUS OF AN ELECTRICAL ENERGY STORAGE UNIT

Abstract

The invention relates to a shunt resistor (2) for detecting the status of an electrical energy storage unit (1), wherein the shunt resistor (2) comprises a first layer (4), a second layer (6) and a third layer (8). According to the invention, the layers (4, 6, 8) are arranged in a layered manner in a stacking direction (V), wherein the second layer (6) is arranged between the first layer (4) and the third layer (8), and wherein the layers (4, 6, 8) are in physical contact with one another at one of the sides having the greatest respective surface area, and wherein the layers (4, 6, 8) are arranged at least partially overlapping.

Claims

1. A shunt resistor (2) for detecting the status of an electrical energy storage unit (1), wherein the shunt resistor (2) has a first layer (4), a second layer (6) and a third layer (8), characterized in that the layers (4, 6, 8) are arranged in a layered manner in a direction of a stacking direction (V), wherein the second layer (6) is arranged between the first layer (4) and the third layer (8), and wherein the layers are each in physical contact with one another by way of sides respectively having a largest surface area, and wherein the layers (4, 6, 8) are arranged in an at least partially overlapping manner.

2. The shunt resistor (2) as claimed in claim 1, characterized in that the individual layers (4, 6, 8) of the shunt resistor (2) are arranged in a direction of a longitudinal axis (11) of the layers and/or a transverse axis (13) of the layers in such a manner that a step profile (10) is produced when layering the individual layers (4, 6, 8) in the direction of the stacking direction (V).

3. The shunt resistor (2) as claimed in claim 2, characterized in that the individual layers (4, 6, 8) of the shunt resistor (2) have different lengths in the direction of the longitudinal axis (11) of the layers (4, 6, 8) and/or the transverse axis (13) of the layers (4, 6, 8).

4. The shunt resistor (2) as claimed in claim 1, characterized in that the shunt resistor (2) is provided with at least one recess (9).

5. The shunt resistor (2) as claimed in claim 4, characterized in that an area of the shunt resistor (2) is reduced by a size of the at least one recess (9) in such a manner that a predefined resistance value of the shunt resistor (2) is achieved.

6. The shunt resistor (2) as claimed in claim 1, characterized in that the individual layers (4, 6, 8) of the shunt resistor (2) are welded to one another.

7. The shunt resistor (2) as claimed in claim 1, characterized in that the second layer (6) has a copper-nickel-manganese alloy.

8. The shunt resistor (2) as claimed in claim 1, characterized in that the first layer (4) and the third layer (8) each comprise the materials of copper and/or aluminum.

9. An electronic energy storage unit (1) having the shunt resistor (2) as claimed in claim 1.

10. A method for producing the shunt resistor (2) for detecting the status of the electrical energy storage unit (1), wherein the shunt resistor (2) has the first layer (4), the second layer (6) and the third layer (8) and the layers (4, 6, 8) are also arranged in a layered manner in the direction of the stacking direction (V), wherein the second layer (6) is arranged between the first layer (4) and the third layer (8), and wherein the layers (4, 6, 8) are each in physical contact with one another by way of one of the sides respectively having the largest surface area of a layer in such a manner that the layers (4, 6, 8) are arranged in an at least partially overlapping manner.

11. The method as claimed in claim 10, wherein the individual layers (4, 6, 8) of the shunt resistor (2) are arranged in the direction of the longitudinal axis (11) of the layers (4, 6, 8) and/or the transverse axis (13) of the layers (4, 6, 8) in such a manner that the step profile (10) is produced when layering the individual layers (4, 6, 8) in the direction of the stacking direction (V), as a result of which surfaces of the individual layers (4, 6, 8), in particular, become at least partially accessible in the direction of the stacking direction (V).

12. The shunt resistor (2) as claimed in claim 7, characterized in that the first layer (4) and the third layer (8) each comprise the materials of copper and/or aluminum.

13. The shunt resistor (2) as claimed in claim 1, characterized in that the individual layers (4, 6, 8) of the shunt resistor (2) are arranged in a direction of a longitudinal axis (11) of the layers and/or a transverse axis (13) of the layers in such a manner that a step profile (10) is produced when layering the individual layers (4, 6, 8) in the direction of the stacking direction (V), as a result of which surfaces of the individual layers (4, 6, 8) are at least partially accessible in the direction of the stacking direction.

Description

BRIEF DESCRIPTION OF THE DRAWINGS

[0019] Further advantages and configurations of the invention emerge from the description and the accompanying drawings.

[0020] It goes without saying that the features mentioned above and the features yet to be explained below can be used not only in the respectively stated combination, but also in other combinations or alone, without departing from the scope of the present invention.

[0021] FIG. 1 shows a side view of an embodiment of a shunt resistor according to the invention on an electrical energy storage unit,

[0022] FIG. 2 shows a plan view of individual layers of the shunt resistor according to the invention,

[0023] FIG. 3 shows a plan view of the shunt resistor according to the invention and its arrangement on an anode of the electrical energy storage unit,

[0024] FIG. 4 shows a plan view of the shunt resistor according to the invention and a possible embodiment of a welded flexible film arrangement on a pole connection of the electrical energy storage unit.

DETAILED DESCRIPTION

[0025] The invention is schematically illustrated in the drawings on the basis of embodiments and is described in detail below with reference to the drawings.

[0026] FIG. 1 shows an electrical energy storage unit 1 having a shunt resistor 2 for detecting the status of the electrical energy storage unit 1 according to one preferred exemplary embodiment. In this case, the shunt resistor 2 has a first layer 4, a second layer 6 and a third layer 8. FIG. 1 also shows that the electrical energy storage unit 1 has a cathode 5 and an anode 7, wherein the shunt resistor 2 for detecting the status of the electrical energy storage unit 1 is installed on the anode 7, in particular.

[0027] The three layers 4, 6, 8 of the shunt resistor 2 are arranged in a layered manner in this case in the direction of a stacking direction V, wherein the second layer 6 is arranged between the first layer 4 and the third layer 8 and the layers 4, 6, 8 are each in physical contact with one another by way of one of the sides respectively having the largest surface area. In this case, the layers 4, 6, 8 can be arranged in an at least partially overlapping manner, with the result that the layers 4, 6, 8 form a step profile 10, for example. This advantageous design of the shunt resistor 2, in which the layers 4, 6, 8 form the step profile 10, has the advantage that the surfaces of the individual layers 4, 6, 8 are at least partially accessible in the direction of the stacking direction V.

[0028] In this case, the first layer 4 and the third layer 8 each have the materials of copper and/or aluminum. In one advantageous embodiment, the first layer 4 and the third layer 8 may be configured, in particular, in such a manner that a shaping aluminum plate is provided with a copper sheath, wherein the aluminum provides the respective layer with the stability and strength, whereas good electrical conductivity of the respective layer is produced by sheathing the first layer 4 and/or the third layer 8 with copper. In this case, the second layer 6 may have an alloy of copper, nickel and manganese, in particular Manganin®. With the aid of the shunt resistor 2 according to the invention, it is possible for only one layer made of a resistance material, for example made of a copper-nickel-manganese alloy, to be required, in which case the configuration of the resistance material component is determined by means of a predefined electrical resistance, for example needed to carry out a meaningful measurement. Different connection variants are possible in this case, as explained below.

[0029] In addition, a terminal 3 can be arranged on the shunt resistor 2 on that side with the largest surface area which is not in each case in contact with the energy storage unit 1, in particular the anode 7.

[0030] FIG. 2 shows the shunt resistor 2 which is constructed from the first layer 4, the second layer 6 and the third layer 8. In this respect, the second layer 6 is stacked onto the third layer 8 in the direction of the stacking direction V which is not illustrated here (see FIG. 1), with the result that the second layer 6 is in contact with the third layer 8 by way of one of the two sides with the largest surface area. Furthermore, the first layer 4 is stacked onto the second layer 6 in the direction of the stacking direction V, with the result that the shunt resistor 2 forms the step profile 10.

[0031] FIG. 2 also shows a longitudinal axis 11 of the shunt resistor 2, wherein the longitudinal axis 11 runs in the direction of the layers 4, 6, 8 and in the direction of the steps of the step profile 10 formed. In this case, the transverse axis 13 runs orthogonal to the longitudinal axis 11 and the stacking direction V, as shown in FIG. 2.

[0032] In this case, FIG. 2 illustrates an advantageous form of the shunt resistor 2 and of the layers 4, 6, 8 for forming the step profile 10. The individual layers 4, 6, 8 advantageously form different lengths in the direction of the longitudinal axis 11, with the result that the stacked layers 4, 6, 8, which are stacked in the direction of the stacking direction V in particular, produce the step profile 10. Another embodiment of the step profile 10 of the shunt resistor 2 can be achieved by virtue of the fact that the individual layers 4, 6, 8 have different widths in the direction of the transverse axis 13, with the result that the layers 4, 6, 8 form the step profile 10 in the direction of the transverse axis 13. Another embodiment of the shunt resistor 2 provides for the individual layers 4, 6, 8 to overlap in the direction of the longitudinal axis 11 and/or the transverse axis 13 and to therefore not only form the step profile 10 but rather to protrude at both ends in each case in the direction of the longitudinal axis 11 and/or the transverse axis 13, but the individual layers 4, 6, 8 are always in physical contact with one another by way of at least some of their sides respectively having the largest surface area.

[0033] FIG. 2 also shows that the shunt resistor 2 and the individual layers 4, 6, 8 are provided with at least one recess 9, wherein the resulting recess is produced in the shunt resistor 2 by stacking the individual layers 4, 6, 8 with the at least one recess 9 in the direction of the stacking direction V. In this case, a resistance value R of the shunt resistor 2 can be changed by means of the at least one recess 9. Introducing the at least one recess 9 increases, in particular, the resistance value R of the shunt resistor 2. Furthermore, the size of the at least one recess 9 or of the plurality of recesses 9 can be increased. In this case, the area, in particular the cross-sectional area, of the shunt resistor 2 is reduced by increasing the diameter and/or the size of the at least one recess 9, as a result of which the resistance value R of the shunt resistor 2 can be increased. Increasing the number of recesses 9 in the shunt resistor 2 has the same effect in this case since the cross-sectional area of the shunt resistor 2, in particular, can be reduced by increasing the number of recesses 9, with the result that the resistance value R of the shunt resistor 2 can be increased as a result.

[0034] Further measures which improve the inventive configuration of the shunt resistor 2 are also welding and/or cohesive connection and/or form-fitting connection and/or force-fitting connection of the individual layers 4, 6, 8. This makes it possible to prevent the individual layers from shifting with respect to one another in the direction of the longitudinal axis 11 and/or the transverse axis 13 and thus the stability of the shunt resistor 2 and a possibly connected flexible film 12 being reduced and therefore the function of the shunt resistor 2 no longer being available.

[0035] FIG. 2 shows an exemplary embodiment of the individual layers 4, 6, 8 of the shunt resistor 2, in which the individual layers 4, 6, 8 have four recesses 9.

[0036] FIG. 3 shows an embodiment of the shunt resistor 2, in which the shunt resistor 2 is shown on the anode 7 on an electrical energy storage unit 1. It is also shown that the terminal 3 can be situated on the first layer 4 of the shunt resistor 2 and is welded to the shunt resistor 2 or connected to the shunt resistor 2 in another manner.

[0037] FIG. 3 shows another particularly advantageous embodiment of the shunt resistor 2, in which a high degree of stability of the shunt resistor 2 can be achieved by welding the individual layers 4, 6, 8 of the shunt resistor 2 or joining the individual layers 4, 6, 8 of the shunt resistor 2 in another manner. The arrangement of the layers 4, 6, 8 is therefore stable and robust with respect to external mechanical loads and, in particular, to shifting of the layers with respect to one another in the direction of the longitudinal axis 11 and/or the transverse axis 13. This high degree of stability and robustness of the shunt resistor 2 also applies to bending forces in the direction of the stacking direction V and, on the other hand, to forces which run in the direction of the longitudinal axis 11 or the transverse axis 13.

[0038] FIG. 4 shows two electrical energy storage units 1 which are arranged beside one another in the direction of the transverse axis 13. The cathode 5 and the anode 7 of the respective electrical energy storage unit 1 are respectively arranged in this case on different sides in the direction of the longitudinal axis 11, with the result that the cathode 5 of one electrical energy storage unit 1 is respectively arranged beside the anode 7 of the second electrical energy storage unit 1. This arrangement of the electrical energy storage units 1 can be used to connect them to one another in a series circuit.

[0039] FIG. 4 also shows that the shunt resistor 2 has the first layer 4, the second layer 6 and the third layer 8, wherein the shunt resistor 2 and the layers 4, 6, 8 have at least the one recess 9. As already described in the preceding figures, the shunt resistor 2 has the step profile 10, in particular by means of different lengths of the individual layers 4, 6, 8 in the direction of the longitudinal axis 11. As a result of this step profile 10 which is formed, a flexible film 12 can be respectively fitted to the first layer 4 and a further flexible film 12 can be fitted to the third layer 8, in which case this can be carried out in a compact design and no flexible film 12 projects from the installation space of the electrical energy storage unit 1 in the direction of the longitudinal axis 11 or the transverse axis 13. The use of the flexible film 12 has the advantage that contact can be made with the shunt resistor 2, in particular the first layer 4 and/or the third layer 8, even in the case of a small and/or angled installation space of the electrical energy storage unit 1, since the flexible film 12 is flexible. In this case, the flexible film 12 is also connected to an electronic battery sensor and serves the purpose of measuring voltages and/or current and/or temperatures by means of the shunt resistor 2 and/or forwarding it/them to the electronic battery sensor. As a result, the flexible film 12 and the electronic battery sensor can be used to derive the battery status, in particular a residual charge.