True random number generator and system comprising the same
11023207 · 2021-06-01
Assignee
Inventors
Cpc classification
H03K3/84
ELECTRICITY
H03K19/21
ELECTRICITY
G06F7/588
PHYSICS
International classification
Abstract
Embodiments provide a true random number generator. The true random number generator may include a first ring oscillator having a first frequency, a second ring oscillator having a second frequency, a third ring oscillator having a third frequency, and a capacitor connected between the second ring oscillator and the third ring oscillator to provide a capacitive coupling therebetween. The second frequency is lower than the first frequency, and the third frequency is lower than the second frequency. The true random number generator may further include a D-type flip-flop having a data input connected to an output of the first ring oscillator and having a clock input connected to an output of the third ring oscillator, wherein the D-type flip-flop is configured to generate an output signal representing a sequence of random numbers.
Claims
1. A true random number generator, comprising: a first ring oscillator having a first frequency; a second ring oscillator having a second frequency, the second frequency being lower than the first frequency; a third ring oscillator having a third frequency, the third frequency being lower than the second frequency; a capacitor connected between the second ring oscillator and the third ring oscillator to provide a capacitive coupling therebetween; a D-type flip-flop having a data input connected to an output of the first ring oscillator and having a clock input connected to an output of the third ring oscillator, wherein the D-type flip-flop is configured to generate an output signal representing a sequence of random numbers.
2. The true random number generator of claim 1, wherein the second ring oscillator and the third ring oscillator are capacitively coupled by the capacitor without a direct current path between the second ring oscillator and the third ring oscillator.
3. The true random number generator of claim 1, wherein the capacitor has a capacitance in the order of femtofarads.
4. The true random number generator of claim 1, wherein the capacitive coupling provided by the capacitor is configured to increase jitter in the output of the third ring oscillator.
5. The true random number generator of claim 1, wherein jitter in the output of the third ring oscillator is scalable with a supply voltage applied to the third ring oscillator.
6. The true random number generator of claim 1, wherein the output of the third ring oscillator comprises jitter larger than a period of the output of the first ring oscillator.
7. The true random number generator of claim 1, wherein the first ring oscillator is configured to receive a first supply voltage, and the second ring oscillator and the third ring oscillator are configured to receive a second supply voltage, the second supply voltage being lower than or equal to the first supply voltage.
8. The true random number generator of claim 1, further comprising a further D-type flip-flop generating a further output signal representing a further sequence of random numbers, wherein the further D-type flip-flop has a data input connected to a further output of the first ring oscillator and has a clock input connected to a further output of the third ring oscillator, wherein the further output of the first ring oscillator is complementary to the output of the first ring oscillator, and the further output of the third ring oscillator is from a different node of the third ring oscillator compared with the output of the third ring oscillator.
9. The true random number generator of claim 8, further comprising a XOR gate configured to combine the output signal of the D-type flip-flop and the further output signal of the further D-type flip-flop to generate a combined output signal.
10. A system for generating random numbers, comprising: a first ring oscillator having a first frequency; and a plurality of random number generators; each random number generator comprising: a respective second ring oscillator having a respective second frequency, the respective second frequency being lower than the first frequency; a respective third ring oscillator having a respective third frequency, the respective third frequency being lower than the respective second frequency; a respective capacitor connected between the respective second ring oscillator and the respective third ring oscillator to provide a capacitive coupling therebetween; a respective first D-type flip-flop having a data input connected to a first output of the first ring oscillator and having a clock input connected to a first output of the respective third ring oscillator, and configured to generate a respective first output signal representing a respective first sequence of random numbers; a respective second D-type flip-flop having a data input connected to a second output of the first ring oscillator and having a clock input connected to a second output of the respective third ring oscillator, and configured to generate a respective second output signal representing a respective second sequence of random numbers; wherein the second output of the first ring oscillator is complementary to the first output of the first ring oscillator, wherein the first output and the second output of the third ring oscillator are output from different nodes of the third ring oscillator.
11. The system of claim 10, wherein the second ring oscillator and the third ring oscillator are capacitively coupled by the capacitor without a direct current path between the second ring oscillator and the third ring oscillator in each of the plurality of random number generators.
12. The system of claim 10, wherein the second ring oscillators in different random number generators have at least one of different transistor sizes or different number of inverter stages from each other.
13. The system of claim 10, wherein the third ring oscillators in different random number generators have at least one of different transistor sizes or different number of inverter stages from each other.
14. The system of claim 10, wherein the respective capacitor has a capacitance in the order of femtofarads.
15. The system of claim 10, wherein in each of the plurality of random number generators, the capacitive coupling provided by the capacitor is configured to increase jitter in the first output and the second output of the third ring oscillator.
16. The system of claim 10, wherein jitter in the first output and the second output of the respective third ring oscillator is scalable with a supply voltage applied to the respective third ring oscillator.
17. The system of claim 10, wherein the first output and the second output of the respective third ring oscillator comprise jitter larger than a period of the first output and the second output of the first ring oscillator.
18. The system of claim 10, wherein the first ring oscillator is configured to receive a first supply voltage; and the second ring oscillator and the third ring oscillator of each random number generator are configured to receive a second supply voltage, the second supply voltage being lower than or equal to the first supply voltage.
19. The system of claim 10, wherein each random number generator further comprises a respective XOR gate configured to combine the first output signal of the first D-type flip-flop and the second output signal of the second D-type flip-flop to generate a combined output signal of each random number generator.
Description
BRIEF DESCRIPTION OF THE DRAWINGS
(1) In the drawings, like reference characters generally refer to the same parts throughout the different views. The drawings are not necessarily to scale, emphasis instead generally being placed upon illustrating the principles of the invention. In the following description, various embodiments are described with reference to the following drawings, in which:
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DESCRIPTION
(7) The following detailed description refers to the accompanying drawings that show, by way of illustration, specific details and embodiments in which the invention may be practiced. These embodiments are described in sufficient detail to enable those skilled in the art to practice the invention. Other embodiments may be utilized, and structural and logical changes may be made without departing from the scope of the invention. The various embodiments are not necessarily mutually exclusive, as some embodiments can be combined with one or more other embodiments to form new embodiments.
(8) According to various embodiments, a robust and scalable true random number generator (TRNG) with high throughput is provided, which achieves improved randomness with a simple structure. Further, the TRNG of the various embodiments occupies small active area and consumes low power.
(9)
(10) As shown in
(11) In other words, various embodiments provide a RO (Ring Oscillator) based TRNG 100, in which two slow ROs, i.e. the second ring oscillator 211 and the third ring oscillator 213, are capacitively coupled with each other via a capacitive coupling device, e.g. a capacitor. The capacitive coupling between the two slow ROs increases jitters in the output 222 of the third ring oscillator 213, which acts as the clock signal of the D-type flip-flop 221 for sampling the high frequency output signal D of the fast RO 201. Thus, the output signal of the D-type flip-flop 221 is obtained with increased randomness.
(12) In this context, the first ring oscillator 201, also denoted as RO.sub.1, is referred as a high frequency RO or a fast RO, as the first frequency f.sub.1 is higher than both the second frequency f.sub.11 and the third frequency f.sub.12. The second ring oscillator 211 (denoted as RO.sub.11) and the third ring oscillator 213 (denoted as RO.sub.12) are each referred to as a low frequency RO or a slow RO accordingly. In an exemplary embodiment, the first ring oscillator 201 may have a frequency of 1 GHz, while the second ring oscillator 211 and the third ring oscillator 213 may have frequencies of 70 MHz and 50 MHz, respectively. The third ring oscillator 213 has a lower frequency than the second ring oscillator 211, and is shown in
(13) In this context, the first frequency refers to the oscillation frequency of the first ring oscillator, i.e. the frequency of the output of the first ring oscillator. Similarly, the second frequency and the third frequency refer to the oscillation frequency of the second ring oscillator (i.e. the frequency of the output of the second ring oscillator) and the oscillation frequency of the third ring oscillator (i.e., the frequency of the output of the third ring oscillator), respectively.
(14) In an embodiment, the second ring oscillator 211 and the third ring oscillator 213 are capacitively coupled by the capacitor 215 without a direct current (DC) path between the second ring oscillator 211 and the third ring oscillator 213. In other words, the second ring oscillator 211 and the third ring oscillator 213 are coupled or connected with each other only via the capacitor 215 and corresponding wiring for such a connection, without any other electronic components connected between the second ring oscillator 211 and the third ring oscillator 213 to provide a DC path therebetween. In this context, the capacitor 215 may be a single capacitor, or a plurality of capacitors in series or parallel connection.
(15) According to various embodiments, the capacitor 215 has a capacitance in the order of femtofarads (fF). The size or capacitance of the coupling capacitor 215 may be determined by matching it with the driving capability of the inverters in the ring oscillators 211, 213. Optimum capacitor size may be determined through simulations. In an exemplary embodiment, the capacitor 215 of several femtofarads is suitable for ring oscillators using minimum-size inverters.
(16) According to various embodiments, the capacitive coupling provided by the capacitor 215 is configured to increase or amplify jitter in the output of the third ring oscillator 213. As shown in
(17) In various embodiments, jitter in the output 222 of the third ring oscillator 213 is scalable with a supply voltage V.sub.DDL applied to the third ring oscillator 213.
(18) In various embodiments, the output 222 of the third ring oscillator 213 may include jitter larger than a period (T.sub.f1) of the output of the first ring oscillator 201, thereby achieving good randomness.
(19) According to various embodiments, the first frequency f.sub.1 of the first ring oscillator 201 may be significantly or substantially higher than the third frequency f.sub.12 of the third ring oscillator 213, so as to achieve or increase the randomness of the output signal. In an exemplary embodiment, the first frequency f.sub.1 is about 10-20 times higher than the third frequency f.sub.12. In another exemplary embodiment, the first frequency f.sub.1 is about 5-10 times higher than the third frequency f.sub.12.
(20) In an illustrative embodiment, since jitter in the output 222 of the third ring oscillator 213 is amplified via the capacitive coupling provided by the capacitor 215, the first frequency f.sub.1 can be reduced. For example, when the second frequency f.sub.11 of 150-200 MHz and the third frequency f.sub.12 of 100 MHz are provided, the first frequency f.sub.1 may be provided as 1 GHz.
(21) In various embodiments, the first ring oscillator 201 is configured to receive a first supply voltage V.sub.DDH, and the second ring oscillator 211 and the third ring oscillator 213 are configured to receive a second supply voltage V.sub.DDL. The second supply voltage V.sub.DDL may be lower than the first supply voltage V.sub.DDH. In an exemplary embodiment, the first ring oscillator 201 is operated using the high supply voltage V.sub.DDH (e.g., 1.2V), and the second ring oscillator 211 and the third ring oscillator 213 are operated using the much lower supply voltage V.sub.DDL since the second ring oscillator 211 and the third ring oscillator 213 are significantly or substantially slower than the first ring oscillator 201. The lower second supply voltage not only increases jitter but also reduce power and energy consumption of the chaotic system 210. In addition, the use of the lower second supply voltage eliminates the need for more stages in the slow ROs 211, 213, and thus reduces the area consumption. Thus, lowering the second supply voltage is more efficient than adding the number of delay stages in the slow ROs 211, 213. In other embodiments, the second supply voltage V.sub.DDL may be equal to the first supply voltage V.sub.DDH, with more stages in the slow ROs 211, 213 for example. The second supply voltage V.sub.DDL may also be supplied to the D-type flip-flop 221.
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(23) As denoted in the scenario 310, without coupling between an oscillator N1 301 with a frequency f.sub.N1 and an oscillator N2 303 with a frequency f.sub.N2, the oscillators 301 and 303 are two independent oscillators. Accordingly, the oscillator 303 only has its intrinsic jitter caused by thermal noise, resulting in an output 312 of the oscillator 303 almost without jitter.
(24) In the scenario 320, the oscillator 301 is coupled with the oscillator 303 via a capacitor 325, similar to the second oscillator 211 being coupled with the third oscillator 213 via the capacitor 215 shown in
(25) By providing capacitive coupling between the two slow ROs 211, 213 using capacitor 215 according to the embodiments above, several advantages may be achieved. First, in capacitive coupling, there is no direct current path between the two slow ROs 211, 213. Thus, the two slow ROs 211, 213 cross-talk, but do not alternate the intrinsic frequencies of each other. Second, the capacitive coupling effect is always available regardless of the voltages across the capacitor 215. As a result, the TRNG 200 is robust and is suitable even in subthreshold supply voltage condition. Accordingly, the TRNG 200 is scalable and is able to operate in subthreshold region to reduce power consumption. Further, it can be easily implemented in standard CMOS technologies. This is advantageous over a conventional diode-coupling design in which the coupling effect diminishes when the voltage across the diode falls below the threshold voltage, and advantageous over a conventional MOS-resistor coupling design in which there is little coupling if the slow ROs operate in subthreshold region.
(26)
(27) The TRNG 400 in the embodiments of
(28) Various embodiments of the TRNG 200 described above are analogously valid for the embodiments of the TRNG 400 of
(29) The TRNG 400 further includes a further D-type flip-flop 423 generating a further output signal OUT.sub.12 representing a further sequence of random numbers. The further D-type flip-flop 423 has a data input connected to a further output DB of the first ring oscillator 201, and has a clock input connected to a further output 424 of the third ring oscillator 213. The further output DB of the first ring oscillator 201 is complementary to the output D of the first ring oscillator 201. The further output 424 of the third ring oscillator 213 is from a different node (e.g., an output node of a different delay or inverter stage) of the third ring oscillator 213 compared with the output 222 of the third ring oscillator 213. The further output 424 of the third ring oscillator 213 may be different from the output 222 of the third ring oscillator, and may be or may not be complementary to the output 222 of the third ring oscillator.
(30) Similar to the embodiments described in
(31) According to an embodiment, the TRNG 400 may further include a XOR gate (not shown) configured to combine the output signal OUT.sub.11 of the D-type flip-flop 221 and the further output signal OUT.sub.12 of the further D-type flip-flop 423 to generate a combined output signal.
(32) In the RO-based TRNG configuration, data of the fast RO.sub.1 201 is sampled by high jitter RO.sub.12 213. At random rising edge of the output of the RO.sub.12 213, the probability that a number 1 (or 0) is sampled equals to the probability that the output of the fast RO.sub.1 201 equals to 1 (or 0), i.e. duty cycle of RO.sub.1. Since a non-calibrated RO may have a duty cycle different from 50%, the output bit stream may be biased. For example, if the duty cycle of the fast RO.sub.1 201 is 60%, statistically 60% of the output bits of the D-type flip flop 221 will be 1. Accordingly, if the output is biased to either 1 or 0, the fast RO.sub.1 201 may need to be calibrated to 50% duty cycle to provide better entropy (i.e. the observed probabilities of 1 and 0 are the same). Another approach to ensure 50% duty cycle signal at the output of the fast RO.sub.1 201 is to insert a frequency divider, which may reduce the throughput with additional power consumption.
(33) The embodiments of the TRNG 400 as shown in
(34) The output signal OUT.sub.11 of the D-type flip-flop 221 and the further output signal OUT.sub.12 of the further D-type flip-flop 423 may be combined using the XOR gate to generate the combined output signal. The combined output signal is a non-biased bit stream with a doubled throughput, thus doubling the bit rate. According to this embodiment, the throughput is doubled with only marginally additional power consumption as the main power is consumed by the high frequency RO.sub.1 201.
(35) Illustratively, at any sampling point t.sub.0 of the data signal data(t.sub.0) output from the high frequency RO.sub.1 201,
P(x=1)=P(data(t.sub.0)=1,t.sub.min<t.sub.0<t.sub.max)
jitter=t.sub.max−t.sub.min
(36) wherein P(x=1) represents a probability of the output data of the DFF 221 to be 1. Accordingly, the output data of the DFF 221 may be biased, if the duty cycle (β) of the input data signal data(t.sub.0) is not 50%.
(37) According to the embodiments of
(38)
wherein E represents an expected value. Accordingly, combining the two output streams OUT.sub.11 and OUT.sub.12 will provide a balanced and unbiased bit stream.
(39)
(40) As shown in
(41) Each of the random number generators (510, 520, . . . , 590) includes a respective second ring oscillator (511, 521, . . . , 591) having a respective second frequency (f.sub.11, f.sub.21, . . . , f.sub.N1), a respective third ring oscillator (513, 523, . . . , 593) having a respective third frequency (f.sub.12, f.sub.22, . . . , f.sub.N2), a respective capacitor (515, 525, . . . , 595) connected between the respective second ring oscillator (511, 521, . . . , 591) and the respective third ring oscillator (513, 523, . . . , 593) to provide the capacitive coupling. The respective second frequency (f.sub.11, f.sub.21, f.sub.N1) is lower than the first frequency f.sub.1, and the respective third frequency (f.sub.12, f.sub.22, . . . , f.sub.N2) is lower than the second frequency (f.sub.11, f.sub.21, . . . f.sub.N1) in the respective random number generator (510, 520, . . . , 590).
(42) Each random number generator (510, 520, . . . , 590) further includes a respective first D-type flip-flop (517, 527, . . . , 597) having a data input connected to a first output D of the first ring oscillator 501 and having a clock input connected to a first output of the respective third ring oscillator (513, 523, . . . , 593), and a second D-type flip-flop (519, 529, . . . , 599) having a data input connected to a second output DB of the first ring oscillator 501 and having a clock input connected to a second output of the respective third ring oscillator (513, 523, . . . , 593). The second output DB of the first ring oscillator 501 is complementary to the first output D of the first ring oscillator 501. The second output of the respective third ring oscillator (513, 523, . . . , 593) is from a different node (e.g., an output node of a different delay/inverter stage) of the third ring oscillator compared with the first output of the respective third ring oscillator (513, 523, . . . , 593). The second output of the respective third ring oscillator (513, 523, . . . , 593) may be different from the first output of the respective third ring oscillator (513, 523, . . . , 593), and may be or may not be complementary to the first output of the respective third ring oscillator (513, 523, . . . , 593). Each of the first D-type flip-flops (517, 527, . . . , 597) is configured to generate a respective first output signal (OUT.sub.11, OUT.sub.21, . . . , OUT.sub.N1) representing a respective first sequence of random numbers. Each of the second D-type flip-flops (519, 529, . . . , 599) is configured to generate a respective second output signal (OUT.sub.12, OUT.sub.22, . . . , OUT.sub.N2) representing a respective second sequence of random numbers.
(43) The respective random number generator (510, 520, . . . , 590) included in the embodiments of the system 500 is similar to the random number generator 400 in the embodiments of
(44) To increase the throughput of a system for random number generation, one approach is to proportionally increase frequencies of the first ring oscillator, the second ring oscillator and the third ring oscillator. Another approach is to create an array of random number generators to form a whole system. Both approaches would lead to a linear increase in power consumption. In a single random number generator, e.g. shown in
(45) In other words, to achieve higher throughput with low power consumption, a shared architecture having N rows of output streams is provided in the embodiments of
(46) According to various embodiments, in order to avoid or reduce correlation between the output sequences of different random number generators (510, 520, . . . , 590) in the array, the second ring oscillators and the third ring oscillators in different random number generators (510, 520, . . . , 590) are isolated and/or sized differently (e.g. by using different transistor sizes, or using different number of inverter stages, or a combination of both), as long as their intrinsic frequencies lies within a desired range.
(47) According to various embodiments, the second ring oscillators (511, 521, . . . , 591) in different random number generators (510, 520, . . . , 590) have at least one of different transistor sizes or different number of inverter stages from each other. According to various embodiments, the third ring oscillator (513, 523, . . . , 593) in different random number generators (510, 520, . . . , 590) have at least one of different transistor sizes or different number of inverter stages from each other. The differences of the second ring oscillators (511, 521, . . . , 591) and the differences of the third ring oscillator (513, 523, . . . , 593) may be provided alternatively or in combination in the system 500. According to various embodiments, the second ring oscillators (511, 521, . . . , 591) in different random number generators (510, 520, . . . , 590) may be isolated from each other. According to various embodiments, the third ring oscillator (513, 523, . . . , 593) in different random number generators (510, 520, . . . , 590) may be isolated from each other.
(48) Similar to the embodiments of
(49) According to various embodiments, in each of the plurality of random number generators (510, 520, . . . , 590), the capacitive coupling provided by the respective capacitor is configured to increase jitter in the first output and the second output of the respective third ring oscillator. According to various embodiments, the capacitor in each of the plurality of random number generators (510, 520, . . . , 590) has a capacitance in the order of femtofarads.
(50) According to various embodiments, in each of the plurality of random number generators (510, 520, . . . , 590), jitter in the first output and the second output of the respective third ring oscillator is scalable with a supply voltage applied to the respective third ring oscillator.
(51) According to various embodiments, in each of the plurality of random number generators (510, 520, . . . , 590), the first output and the second output of the respective third ring oscillator include jitter larger than a period of the first output D and the second output DB of the first ring oscillator 501.
(52) According to various embodiments, the first ring oscillator is configured to receive a first supply voltage V.sub.DDH; and the second ring oscillator and the third ring oscillator of each random number generator (510, 520, . . . , 590) are configured to receive a second supply voltage V.sub.DDL. In an exemplary embodiment, the second supply voltage V.sub.DDL is lower than the first supply voltage V.sub.DDH. In other embodiments, the second supply voltage V.sub.DDL may be equal to the first supply voltage V.sub.DDH. In other embodiments, the second supply voltage V.sub.DDL may be equal to the first supply voltage V.sub.DDH, with more stages in the second ring oscillators and the third ring oscillators, for example.
(53) According to various embodiments, the first frequency f.sub.1 is significantly or substantially higher than the third frequency (f.sub.12, f.sub.22, . . . , f.sub.N2) of each random number generator. In an illustrative example, the first frequency f.sub.1 is about 10 times of the third frequency (f.sub.12, f.sub.22, . . . , f.sub.N2).
(54) According to various embodiments, each random number generator may further include a respective XOR gate configured to combine the first output signal (OUT.sub.11, OUT.sub.21, . . . , OUT.sub.N1) of the first D-type flip-flop and the second output signal (OUT.sub.12, OUT.sub.22, . . . , OUT.sub.N2) of the second D-type flip-flop in the respective random number generator to generate a combined output signal of each random number generator.
(55) In the embodiments of
(56) Illustratively, if X and Y are independent random bits with E(X)=μ, and E(Y)=v, then E(XßY)=μ+ν−2μν=0.5−2(μ−0.5)(ν−0.5), which is closer to 0.5.
(57) According to various embodiments, several designing factors may need to be engineered to ensure the randomness of the output stream of the random number generator 200, 400 and the system 500 above, as described below.
(58) In various embodiments, the first frequency f.sub.1 of the first ring oscillator (201, 501) may be configured to be substantially or significantly higher than the third frequency f.sub.k2 (k=1, 2, . . . N) of each third ring oscillator (213, 513, 523, . . . , 593) which is the intrinsic oscillating frequency of the slow ring oscillator in each chaotic system. In an exemplary embodiment, f.sub.1 may be 10 time to 20 times higher than f.sub.12, which helps to reduce f.sub.1 compared to existing method.
(59) In various embodiments, the size of the coupling capacitor may be configured to match the driving capability of the inverters in the ROs. If the size of the capacitor is too small, the coupling effect diminishes. On the other hand, if the size of the capacitor is too large, the ROs themselves cannot oscillate. In an exemplary embodiment, a capacitor of several femtofarad (fF) is suitable for ROs using all minimum-size inverters. Optimum capacitor size may be determined through simulations.
(60) In various embodiments, the second frequency f.sub.k1 (k=1, 2, . . . N) is configured to be higher or faster than the third frequency f.sub.k2. This may be realized by using more delay stages in RO.sub.k2 than that of RO.sub.k1. For example, 5 stages in RO.sub.k2 versus 3 stages in RO.sub.k1, or 7 stages in RO.sub.k2 versus 5 stages in RO.sub.k1 may be provided. In an exemplary embodiment, f.sub.k1<2×f.sub.k2 may be configured, so as to reduce power consumption in RO.sub.k1 and reduce the number of stages in RO.sub.k2.
(61) In various embodiments, to avoid correlation between output streams from different channels (e.g. in the system 500), each chaotic system formed by the respective second oscillator, third oscillator and the coupling capacitor, may be configured to be different from each other, i.e. to be unique. Although random process variations ensure distinctive characteristic of each chaotic system, this difference may not be enough. In various embodiments, different transistor sizing in each ROs and/or different number of inverter/delay stages may be used. The strategy is to purposely vary the intrinsic frequency of each ROs, as long as it is in the acceptable range.
(62) According to various embodiments described above with reference to
(63) These various embodiments provide various advantages. Firstly, large or amplified jitter with minimum number of inverter stages reduces both power and area, and increases the randomness of the output stream. Secondly, dual sampling helps to mitigate biasing issues in the output sequence. Thirdly, low-power consumption is achieved since 1) the fast RO.sub.1 is shared by the plurality of random number generators; 2) the high VDD (V.sub.DDH) is used for the fast RO.sub.1 while the rest of the random number generator 200, 400 or the system 500 use the low VDD (V.sub.DDL); 3) the number of inverter stages in the slow ROs is small, and 4) the high jitter of the third oscillator RO.sub.k2. Fourthly, the random number generator 200, 400 or the system 500 is scalable to different supply voltages and technologies due to all digital implementation.
(64) In the following, simulation results of the random number generator 200 according to various embodiments above in a 65 nm CMOS process at two different operating conditions are discussed. According to the transient simulation of the third ring oscillator 213 at a supply voltage V.sub.DDL of 0.6V, the third ring oscillator 213 has the third frequency of 120 MHz with a jitter of almost 15% of its period. According to the transient simulation of the third ring oscillator 213 at a supply voltage V.sub.DDL of 1.2 V, the third ring oscillator 213 has the third frequency of 1 GHz and a jitter as large as 20% of its period. In these simulations, only the supply voltage is scaled while other conditions are kept the same. The simulation results shows that the random number generator 200 of the embodiments above offers very large jitter and is scalable with the supply voltage.
(65) Further simulation results of the random number generator 200 show that the period of the output signal of the high frequency RO.sub.1 201 is about 1 ns. The jitter in the output signal of the third RO.sub.12 213 is as long as 1.8 ns, which is longer and larger than the period of the output signal of the high frequency RO.sub.1201, and thus achieves high entropy.
(66) Table 1 below shows the simulation results illustrating the performance of the random number generator 200 in 65 nm CMS process.
(67) TABLE-US-00001 TABLE 1 Normal- ized Source Bit Effi- energy- Tech- of rate Area Power ciency En- area nology entropy (Mb/s) (um.sup.2) (uW) (pJ/bit) tropy product 65 nm Oscillator 120 150 38 0.32 0.994 0.0045 Jitter scalable
(68) The simulation results in Table 1 show that the random number generator 200 according to various embodiments provides a low energy-area product, which consumes low power and area while achieving high entropy and bit rate. It consumes only 38 μW power while having a throughput of 120 Mb/s. It also passed the NIST (National Institute of Standards and Technology) test suite when tested with 18 Mb.
(69) According to various embodiments above, capacitive coupling between oscillators is provided as an effective and robust design to amplify jitter, which produces larger jitter over a range of frequencies and supply voltages. In this manner, noise is purposely injected from one RO to another and vice versa, causing them tangling with each other to result in the unpredictability of the rising edge of the ROs. By body voltage jitter injection, large jitter at low voltages is produced. Randomness depends on the nondeterministic property of the jitter, and thus by injecting more jitter, randomness is improved. Further, by providing more jitter, the requirement on the frequency of the high frequency RO which dominates power consumption can be reduced, and thus power can be decreased. The random number generator with capacitive coupling is scalable and operable at low supply voltages, for example, is able to operate at sub-threshold region to reduce power. A lower power supply is used for low frequency ROs. This reduces power and area and increases jitter, compared to conventional way which obtains lower frequency by adding more buffer stages or using higher threshold/stacking devices.
(70) The embodiments of
(71) The embodiments of
(72) The random number generator and the system of the above embodiments may be used in low-power and small area applications, such as portable devices and smart-cards. They may also be used in high performance and high speed applications, such as high speed cryptography, server, data center, simulations and statistical sampling.
(73) While the invention has been particularly shown and described with reference to specific embodiments, it should be understood by those skilled in the art that various changes in form and detail may be made therein without departing from the spirit and scope of the invention as defined by the appended claims. The scope of the invention is thus indicated by the appended claims and all changes which come within the meaning and range of equivalency of the claims are therefore intended to be embraced.