Capacitive sensor and input device
11029779 · 2021-06-08
Assignee
Inventors
Cpc classification
H03K2017/9602
ELECTRICITY
G06F3/0448
PHYSICS
H03K2217/960755
ELECTRICITY
G06F3/04164
PHYSICS
G06F3/04166
PHYSICS
International classification
Abstract
Three or more detection electrodes intersect in each of sections that divide a region to which an object is approachable. The detection electrodes each include partial electrodes connected in cascade via wiring, and partial electrodes included in the detection electrodes that intersect in each section are disposed in the section. Three or more partial electrodes disposed in the section includes a single first partial electrode and at least two second partial electrodes. The first partial electrode is connected in cascade to the partial electrode on one side through a first-layer or second-layer wiring and to the partial electrode on the other side through the second-layer wiring. Each second partial electrode is connected in cascade to the partial electrode in one side through the first-layer wiring and to the partial electrode on the other side through the second-layer wiring.
Claims
1. A capacitive sensor for detecting a change in electrostatic capacitance caused by a change in position of an object in each of a plurality of sections that divide a region to which the object is approachable, comprising: a plurality of detection electrodes each including a plurality of partial electrodes connected in cascade via wiring; a first layer in which the partial electrodes and the wiring are disposed; and a second layer in which the wiring is disposed, wherein each of the plurality of detection electrodes belongs to any one of three or more detection electrode groups, the detection electrodes that belong to a same one of the detection electrode groups among the plurality of detection electrodes do not intersect one another, the detection electrodes that belong to different ones of the detection electrode groups among the plurality of detection electrodes intersect one another while being in the first layer and the second layer, respectively, three or more partial electrodes included in three or more different ones of the detection electrodes belonging to different ones of the detection electrode groups are located in each of the plurality of sections, the three or more detection electrodes belonging to the different ones of the detection electrode groups intersect one another in an inner one of the sections surrounded by other sections, the three or more partial electrodes located in the inner section include a single first partial electrode and at least two second partial electrodes, the first partial electrode is connected in cascade to the partial electrode on one side via the wiring passing through the first layer or the second layer and is connected in cascade to the partial electrode on the other side via the wiring passing through the second layer, and each of the second partial electrodes is connected in cascade to the partial electrode on one side via the wiring passing through the first layer and is connected in cascade to the partial electrode on the other side via the wiring passing through the second layer.
2. The capacitive sensor according to claim 1, wherein the first partial electrode is connected in cascade to the partial electrode on one side via the wiring passing through the first layer and is connected in cascade to the partial electrode on the other side via the wiring passing through the second layer.
3. The capacitive sensor according to claim 1, wherein the first partial electrode is connected in cascade to the partial electrode on one side via the wiring passing through the second layer and is connected in cascade to the partial electrode on the other side via the wiring passing through the second layer.
4. The capacitive sensor according to claim 1, wherein the three or more partial electrodes located in the inner section include a single third partial electrode; and the third partial electrode is connected in cascade to the partial electrode on one side via the wiring passing through the first layer and is connected in cascade to the partial electrode on the other side via the wiring passing through the first layer.
5. The capacitive sensor according to claim 1, wherein at least one pair of the partial electrodes located in a same one of the sections have shapes that are rotationally symmetric with each other about a central point of the section.
6. The capacitive sensor according to claim 5, wherein at least one pair of the partial electrodes located in a same one of the sections have shapes that are two-fold symmetric with each other about a central point of the section.
7. An input device for inputting information according to a change in electrostatic capacitance caused by a change in position of an object in each of a plurality of sections that divide a region to which the object is approachable, comprising: the capacitive sensor according to claim 1; an electrostatic capacitance detection unit; and an element data configuring unit.
8. A capacitive sensor for detecting a change in electrostatic capacitance caused by a change in position of an object in each of a plurality of sections that divide a region to which the object is approachable, comprising: a plurality of detection electrodes each including a plurality of partial electrodes connected in cascade via wiring; a first layer in which the partial electrodes and the wiring are disposed; and a second layer in which the wiring is disposed, wherein each of the plurality of detection electrodes belongs to any one of three or more detection electrode groups, the detection electrodes that belong to a same one of the detection electrode groups among the plurality of detection electrodes do not intersect one another, the detection electrodes that belong to different ones of the detection electrode groups among the plurality of detection electrodes intersect one another while being in the first layer and the second layer, respectively, three or more partial electrodes included in three or more different ones of the detection electrodes belonging to different ones of the detection electrode groups are located in each of the plurality of sections, the three or more detection electrodes belonging to the different ones of the detection electrode groups intersect one another in an inner one of the sections surrounded by other sections, the three or more partial electrodes located in the inner section include a single first partial electrode and at least two second partial electrodes, the first partial electrode is connected in cascade to the partial electrode on one side via the wiring passing through the first layer or the second layer and is connected in cascade to the partial electrode on the other side via the wiring passing through the second layer, each of the second partial electrodes is connected in cascade to the partial electrode on one side via the wiring passing through the first layer and is connected in cascade to the partial electrode on the other side via the wiring passing through the second layer, and wherein the capacitive sensor includes N detection electrodes as the plurality of detection electrodes; the electrostatic capacitance detection unit generates, for each of the N detection electrodes, detection data corresponding to first electrostatic capacitance between the object and the detection electrode; the element data configuring unit configures M pieces of element data indicative of degrees of proximity of the object in the respective M sections on a basis of the N pieces of detection data, M being a natural number larger than N; each of the M pieces of element data is a sum of partial element data distributed to the respective N pieces of detection data at predetermined proportions; each of the N pieces of detection data is approximate to a sum of the partial element data distributed from the M pieces of element data at the predetermined proportions; each of the partial element data is approximate to second electrostatic capacitance between one of the partial electrodes and the object in one of the sections; each of the element data is approximate to third electrostatic capacitance obtained by summing up all second electrostatic capacitances in one of the sections; the element data configuring unit repeats data configuring processing for calculating assumed values of the N pieces of detection data as sums of the partial element data distributed from assumed values of the M pieces of element data at the predetermined proportions and modifying the assumed values of the M pieces of element data on a basis of the N predetermined proportions set for each of the M pieces of element data so that the calculated assumed values of the N pieces of detection data approach the N pieces of detection data.
9. The capacitive sensor according to claim 8, wherein the first partial electrode is connected in cascade to the partial electrode on one side via the wiring passing through the first layer and is connected in cascade to the partial electrode on the other side via the wiring passing through the second layer.
10. The capacitive sensor according to claim 8, wherein the first partial electrode is connected in cascade to the partial electrode on one side via the wiring passing through the second layer and is connected in cascade to the partial electrode on the other side via the wiring passing through the second layer.
11. The capacitive sensor according to claim 8, wherein the three or more partial electrodes located in the inner section include a single third partial electrode; and the third partial electrode is connected in cascade to the partial electrode on one side via the wiring passing through the first layer and is connected in cascade to the partial electrode on the other side via the wiring passing through the first layer.
12. The capacitive sensor according to claim 8, wherein at least one pair of the partial electrodes located in a same one of the sections have shapes that are rotationally symmetric with each other about a central point of the section.
13. The capacitive sensor according to claim 12, wherein at least one pair of the partial electrodes located in a same one of the sections have shapes that are two-fold symmetric with each other about a central point of the section.
14. An input device for inputting information according to a change in electrostatic capacitance caused by a change in position of an object in each of a plurality of sections that divide a region to which the object is approachable, comprising: the capacitive sensor according to claim 8; an electrostatic capacitance detection unit; and an element data configuring unit.
Description
BRIEF DESCRIPTION OF THE DRAWINGS
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DESCRIPTION OF THE DISCLOSURE
First Embodiment
(36) First, an outline configuration of a capacitive sensor according to an embodiment of the present invention is described below with reference to
(37) The capacitive sensor 11 according to the present embodiment has a plurality of detection electrodes E in which electrostatic capacitance varies in accordance with a change in position of an object. For example, as illustrated in
(38) The capacitive sensor 11 according to the present embodiment is, for example, a printed board having a plate shape or a sheet shape and has a layer structure as illustrated in
(39) The plurality of detection electrodes E of the capacitive sensor 11 are classified into three or more groups. The groups of detection electrodes E (detection electrode groups) are, for example, classifications based on directions (e.g., a longitudinal direction, a lateral direction, and a diagonal direction) in which the detection electrodes E extend on the region AR. Note, however, that the detection electrodes E according to the present invention need not necessarily extend linearly and may be curved or may be bent. That is, each of the detection electrode groups specifies detection electrodes E that do not intersect one another in the region AR, and detection electrodes E belonging to an identical detection electrode group do not intersect one another. Conversely, at least parts of detection electrodes E that belong to different detection electrode groups intersect each other in a section A of the region AR. Detection electrodes E that intersect each other intersect each other while being in the first layer L1 and the second layer L2, respectively, so as not to electrically contact each other (intersect each other in a place where one of the detection electrodes E is in the first layer L1 and the other one of the detection electrodes E is in the second layer L2).
(40) In the capacitive sensor 11 according to the present embodiment, three or more partial electrodes B are located in each of the plurality of sections A, and the three or more partial electrodes are included in three or more different detection electrodes E belonging to different detection electrode groups, respectively. That is, the three or more partial electrodes B located in an identical section A are included in respective different detection electrodes E, and these detection electrodes E belong to detection electrode groups different each other.
(41) As stated above, since partial electrodes B included in three or more different detection electrodes E belonging to detection electrode groups different each other are located in a single section A, three or more detection electrodes E belonging to detection electrode groups different each other intersect one another in an inner section A (hereinafter sometimes simply referred to as an “inner section A”) surrounded by other sections A.
(42)
(43) In the present embodiment, three or more partial electrodes B located in the inner section A include a single first partial electrode and at least two second partial electrodes. The first partial electrode is connected in cascade to a partial electrode B on one side through the first layer wiring W1 passing the first layer L1 or the second layer wiring W2 passing the second layer L2 and is connected in cascade to a partial electrode B on the other side through the second layer wiring W2 passing the second layer L2. That is, the first partial electrode is a partial electrode B that is wired so as to take a detour through a single via VH as illustrated in
(44) Next, an example of a more specific structure of the capacitive sensor 11 according to the present embodiment is described with reference to
(45)
(46) In
(47) As is clear from
(48) The partial electrode group G11 illustrated in
(49) The partial electrode group G12 illustrated in
(50) The partial electrode groups G12, G11, G12, G12, G11, and G12 are located around the partial electrode group G11 in an order from the direction X1 to X6. The partial electrode groups G11, G12, G11, G11, G12, and G11 are located around the partial electrode group G12 in an order from the direction X1 to X6.
(51) A difference between the partial electrode group G11 and the partial electrode group G12 lies in layout of the partial electrodes B corresponding to the respective detection electrode groups on an outer circumference side. Specifically, in the partial electrode group G11, an outer circumference of the partial electrode BA11 corresponding to the detection electrode EA faces the X1 side and the X2 side. Meanwhile, in the partial electrode group G12, an outer circumference of the partial electrode BA12 corresponding to the detection electrode EA faces the X3 side and the X4 side.
(52) The partial electrode BA11 is connected in cascade to the partial electrode BA12 on one side through the first layer wiring W1 and is connected in cascade to the partial electrode BA12 on the other side through the second layer wiring W2. The partial electrode BC11 is connected in cascade to the partial electrode BC12 on one side through the first layer wiring W1 and is connected in cascade to the partial electrode BC12 on the other side through the second layer wiring W2. The partial electrode BB11 is connected in cascade to the partial electrodes BB11 on both sides through the second layer wiring W2. The partial electrode BB12 is connected in cascade to the partial electrodes BB12 on both sides through the second layer wiring W2. The partial electrodes BA11, BA12, BC11, and BC12 are the second partial electrodes, and the partial electrodes BB11 and BB12 are the first partial electrodes.
(53) As described above, according to the capacitive sensor 11 according to the present embodiment, the partial electrodes B of the detection electrodes E are wired by using not only the second layer L2 for wiring but also the first layer L1 in which the partial electrodes B are provided, and the number of vias VH used for a single detection electrode E in a single section A is only 1. It is therefore possible to reduce the number of vias used without increasing the number of inner layers.
Second Embodiment
(54) Next, a second embodiment of the present invention is described. A capacitive sensor 11 according to the present embodiment is different from the capacitive sensor 11 illustrated in
(55)
(56)
(57) The partial electrode group G22 illustrated in
(58) The partial electrode group G23 illustrated in
(59) The partial electrode group G24 illustrated in
(60) The partial electrode groups G23, G24, G22, G23, G22, and G24 are located around the partial electrode group G21 in an order from the direction X1 to the direction X6. The partial electrode groups G24, G21, G23, G24, G23, and G21 are located around the partial electrode group G22 in the order from the direction X1 to the direction X6. The partial electrode groups G21, G22, G24, G21, G24, and G22 are located around the partial electrode group G23 in the order from the direction X1 to the direction X6. The partial electrode groups G22, G23, G21, G22, G21, and G23 are located around the partial electrode group G24 in the order from the direction X1 to the direction X6.
(61) The partial electrode BA21 is connected in cascade to the partial electrode BA23 on one side through the first layer wiring W1 and is connected in cascade to the partial electrode BA23 on the other side through the second layer wiring W2. The partial electrode BA22 is connected in cascade to the partial electrode BA24 on one side through the first layer wiring W1 and is connected in cascade to the partial electrode BA24 on the other side through the second layer wiring W2.
(62) The partial electrode BC21 is connected in cascade to the partial electrode BC22 on one side through the first layer wiring W1 and is connected in cascade to the partial electrode BC24 on the other side through the second layer wiring W2. The partial electrode BC23 is connected in cascade to the partial electrode BC24 on one side through the first layer wiring W1 and is connected in cascade to the partial electrode BC22 on the other side through the second layer wiring W2.
(63) The partial electrode BB21 is connected in cascade to the partial electrode BB22 on one side through the first layer wiring W1 and is connected in cascade to the partial electrode BB24 on the other side through the second layer wiring W2. The partial electrode BB23 is connected in cascade to the partial electrode BB24 on one side through the first layer wiring W1 and is connected in cascade to the partial electrode BB22 on the other side through the second layer wiring W2.
(64) As described above, also in the capacitive sensor 11 according to the present embodiment, the number of vias VH used for a single detection electrode E in a single section A is only one. It is therefore possible to reduce the number of vias used without increasing the number of inner layers, as in the capacitive sensor 11 according to the first embodiment.
Third Embodiment
(65) Next, a third embodiment of the present invention is described. In the first embodiment and the second embodiment described above, a partial electrode group G in each section A is constituted by three partial electrodes B. Meanwhile, in a capacitive sensor 11 according to the present embodiment, a partial electrode group G in each section A is constituted by four partial electrodes B.
(66)
(67) In
(68) As is clear from
(69) The partial electrode group G31 illustrated in
(70) The partial electrode group G32 illustrated in
(71) The partial electrode groups G32, G32, G31, G32, G32, G32, G31, and G32 are located around the partial electrode group G31 in an order of the direction Y1 to the direction Y8. The partial electrode groups G31, G31, G32, G31, G31, G31, G32, and G31 are located around the partial electrode group G32 in the order of the direction Y1 to the direction Y8.
(72) The partial electrode BD31 is connected in cascade to the partial electrode BD32 on one side through the first layer wiring W1 and is connected in cascade to the partial electrode BD32 on the other side through the second layer wiring W2. The partial electrode BF31 is connected in cascade to the partial electrode BF32 on one side through the first layer wiring W1 and is connected in cascade to the partial electrode BF32 on the other side through the second layer wiring W2. The partial electrode BG31 is connected in cascade to the partial electrode BG32 on one side through the first layer wiring W1 and is connected in cascade to the partial electrode BG32 on the other side through the second layer wiring W2. The partial electrode BE31 is connected in cascade to the partial electrodes BE31 on both sides through the second layer wiring W2. The partial electrode BE32 is connected in cascade to the partial electrodes BE32 on both sides through the second layer wiring W2. The partial electrodes BD31, BD32, BF31, BF32, BG31, and BG32 are second partial electrodes, and the partial electrodes BE31 and BE32 are first partial electrodes.
(73) As described above, also in the present embodiment in which the number of partial electrodes B included in the partial electrode group G increases from 3 to 4, the number of vias VH used for a single detection electrode E in a single section A is only one. It is therefore possible to reduce the number of vias used without increasing the number of inner layers.
Fourth Embodiment
(74) Next, a fourth embodiment of the present invention is described. A capacitive sensor 11 according to the present embodiment is different from the capacitive sensor 11 illustrated in
(75)
(76) The partial electrode group G41 illustrated in
(77) The partial electrode group G42 illustrated in
(78) The partial electrode group G43 illustrated in
(79) The partial electrode group G44 illustrated in
(80) The partial electrode groups G43, G44, G42, G44, G43, G44, G42, and G44 are located around the partial electrode group G41 in an order of a direction Y1 to a direction Y8. The partial electrode groups G44, G43, G41, G43, G44, G43, G41, and G43 are located around the partial electrode group G42 in the order of the direction Y1 to the direction Y8. The partial electrode groups G41, G42, G44, G42, G41, G42, G44, and G42 are located around the partial electrode group G43 in the order of the direction Y1 to the direction Y8. The partial electrode groups G42, G41, G43, G41, G42, G41, G43, and G41 are located around the partial electrode group G44 in the order of the direction Y1 to the direction Y8.
(81) The partial electrode BD41 is connected in cascade to the partial electrode BD43 on one side through the first layer wiring W1 and is connected in cascade to the partial electrode BD43 on the other side through the second layer wiring W2. The partial electrode BD42 is connected in cascade to the partial electrode BD44 on one side through the first layer wiring W1 and is connected in cascade to the partial electrode BD44 on the other side through the second layer wiring W2.
(82) The partial electrode BF41 is connected in cascade to the partial electrode BF44 on one side through the first layer wiring W1 and is connected in cascade to the partial electrode BF44 on the other side through the second layer wiring W2. The partial electrode BF42 is connected in cascade to the partial electrode BF43 on one side through the first layer wiring W1 and is connected in cascade to the partial electrode BF43 on the other side through the second layer wiring W2.
(83) The partial electrode BG41 is connected in cascade to the partial electrode BG44 on one side through the first layer wiring W1 and is connected in cascade to the partial electrode BG44 on the other side through the second layer wiring W2. The partial electrode BG42 is connected in cascade to the partial electrode BG43 on one side through the first layer wiring W1 and is connected in cascade to the partial electrode BG43 on the other side through the second layer wiring W2.
(84) The partial electrode BE41 is connected in cascade to the partial electrodes BF42 on both sides through the second layer wiring W2 and the partial electrode BF43 is connected in cascade to the partial electrodes BE44 on both sides through the second layer wiring W2.
(85) The partial electrodes BD41 through BD44, BF41 through BF44, and BG41 through BG44 are second partial electrodes, and the partial electrodes BE41 through BE44 are first partial electrodes.
(86)
(87) Meanwhile,
(88) Also in the capacitive sensor according to the present embodiment, the number of vias VH used for a single detection electrode E in a single section A is only one, and therefore it is possible to reduce the number of vias used without increasing the number of inner layers.
Fifth Embodiment
(89) Next, a fifth embodiment of the present invention is described. A capacitive sensor 11 according to the present embodiment is different from the capacitive sensors 11 according to the third embodiment (
(90)
(91) The partial electrode group G51 illustrated in
(92) The partial electrode group G52 illustrated in
(93) The partial electrode group G53 illustrated in
(94) The partial electrode group G54 illustrated in
(95) The partial electrode groups G53, G54, G52, G54, G53, G54, G52, and G54 are located around the partial electrode group G51 in an order of a direction Y1 to a direction Y8. The partial electrode groups G54, G53, G51, G53, G54, G53, G51, and G53 are located around the partial electrode group G52 in the order of the direction Y1 to the direction Y8. The partial electrode groups G51, G52, G54, G52, G51, G52, G54, and G52 are located around the partial electrode group G53 in the order of the direction Y1 to the direction Y8. The partial electrode groups G52, G51, G53, G51, G52, G51, G53, and G51 are located around the partial electrode group G54 in the order of the direction Y1 to the direction Y8.
(96) The partial electrode BD51 is connected in cascade to the partial electrode BD53 on one side through the first layer wiring W1 and is connected in cascade to the partial electrode BD53 on the other side through the second layer wiring W2. The partial electrode BD52 is connected in cascade to the partial electrode BD54 on one side through the first layer wiring W1 and is connected in cascade to the partial electrode BD54 on the other side through the second layer wiring W2.
(97) The partial electrode BE51 is connected in cascade to the partial electrode BE52 on one side through the first layer wiring W1 and is connected in cascade to the partial electrode BE52 on the other side through the second layer wiring W2. The partial electrode BE53 is connected in cascade to the partial electrode BE54 on one side through the first layer wiring W1 and is connected in cascade to the partial electrode BE54 on the other side through the second layer wiring W2.
(98) The partial electrode BF51 is connected in cascade to the partial electrode BF54 on one side through the first layer wiring W1 and is connected in cascade to the partial electrode BF54 on the other side through the second layer wiring W2. The partial electrode BF52 is connected in cascade to the partial electrode BF53 on one side through the first layer wiring W1 and is connected in cascade to the partial electrode BF53 on the other side through the second layer wiring W2.
(99) The partial electrode BG51 is connected in cascade to the partial electrode BG54 on one side through the first layer wiring W1 and is connected in cascade to the partial electrode BG54 on the other side through the second layer wiring W2. The partial electrode BG52 is connected in cascade to the partial electrode BG53 on one side through the first layer wiring W1 and is connected in cascade to the partial electrode BG53 on the other side through the second layer wiring W2.
(100) As described above, also in the capacitive sensor 11 according to the present embodiment, the number of vias VH used for a single detection electrode E in a single section A is only one, and therefore it is possible to reduce the number of vias used without increasing the number of inner layers as in the third embodiment and the fourth embodiment.
Sixth Embodiment
(101) Next, a sixth embodiment of the present invention is described. In the embodiments described so far, all detection electrodes E are wired by using both of the first layer wiring W1 and the second layer wiring W2 or only the second layer wiring W2. Meanwhile, in a capacitive sensor according to the present embodiment, some detection electrodes E are wired without a via by using only the first layer wiring W1.
(102) A configuration of the present embodiment is similar to the configurations of the third through fifth embodiments in terms of a shape of a section A, a configuration of detection electrode groups, and the like and is different from the configurations of the third through fifth embodiments in terms of a configuration and a wiring pattern of a partial electrode group in each section A and a shape of partial electrodes. The following basically describes differences from the embodiments described so far.
(103)
(104) The partial electrode group G61 illustrated in
(105) The partial electrode group G62 illustrated in
(106) The partial electrode groups G62, G62, G61, G62, G62, G62, G61, and G62 are located around the partial electrode group G61 in an order of a direction Y1 to a direction Y8. The partial electrode groups G61, G61, G62, G61, G61, G61, G62, and G61 are located around the partial electrode group G62 in the order of the direction Y1 to the direction Y8.
(107) The partial electrode BF61 is connected in cascade to the partial electrode BF62 on one side through the first layer wiring W1 and is connected in cascade to the partial electrode BF62 on the other side through the second layer wiring W2.
(108) The partial electrode BG61 is connected in cascade to the partial electrode BG62 on one side through the first layer wiring W1 and is connected in cascade to the partial electrode BG62 on the other side through the second layer wiring W2.
(109) The partial electrode BE61 is connected in cascade to the partial electrodes BE61 on both sides through the second layer wiring W2. The partial electrode BE62 is connected in cascade to the partial electrodes BE62 on both sides through the second layer wiring W2.
(110) As is clear from these connection relationships, the partial electrodes BE61 and BE62 are first partial electrodes, and the partial electrodes BF61, BF62, BG61, and BG62 are second partial electrodes.
(111) Meanwhile, the partial electrode BD61 is connected in cascade to the partial electrodes BD62 on both sides through the first layer wiring W1. The partial electrodes BD61 and BD62 correspond to third partial electrodes according to the present invention. According to the present embodiment, as the number of vias for wiring leading to the third partial electrodes (the partial electrodes BD61 and BD62) is zero, the number of vias VH is smaller by one than that in the above embodiments.
Seventh Embodiment
(112)
(113) The input device illustrated in
(114) Sensor Unit 10
(115) The sensor unit 10 includes the capacitive sensor 11 described in any of the above embodiments. The sensor unit 10 detects a degree of proximity of an object (e.g., a finger or a pen) in each of N detection electrodes E.sub.1 through E.sub.N and generate N pieces of detection data S.sub.1 through S.sub.N as a whole. The sensor unit 10 generates a single piece of detection data S.sub.i for each of the detection electrodes E.sub.1 through E.sub.N. Note that i represents an integer from 1 to N. Hereinafter, the N pieces of detection data S.sub.1 through S.sub.N are sometimes collectively referred to as “detection data S”. Furthermore, the N detection electrodes E.sub.1 through E.sub.N are sometimes collectively referred to as a “detection electrode E”.
(116) Furthermore, the sensor unit 10 includes an electrostatic capacitance detection unit 12 that generates detection data S in accordance with an electrostatic capacitance (first electrostatic capacitance) between an object located in proximity to an operation surface of the capacitive sensor 11 (hereinafter referred to as the “operation surface 11”) and the detection electrode E. The electrostatic capacitance detection unit 12 is connected to each of the N detection electrodes E through extraction wiring (not illustrated) and generates detection data S for each of the detection electrodes E.
(117) The electrostatic capacitance detection unit 12 samples an electric charge according to an electrostatic capacitance of a capacitor formed between each of the N detection electrodes E and an object and outputs detection data S according to the sampled electric charge. The electrostatic capacitance detection unit 12 includes, for example, an electrostatic capacitance-voltage conversion circuit (CV conversion circuit) and an A/D conversion circuit. The CV conversion circuit charges or discharges the capacitor formed between each of the N detection electrodes E and the object under control of the processing unit 20, transfers an electric charge of the capacitor transmitted through the detection electrode E as a result of the charge or discharge to a capacitor for reference, and outputs a signal corresponding to a voltage that is generated in the capacitor for reference. The A/D conversion circuit converts an output signal of the CV conversion circuit into a digital signal on a predetermined cycle under control of the processing unit 20 and outputs the digital signal as detection data S. Hereinafter, detection data of electrostatic capacitance of a detection electrode E.sub.i is referred to as “S.sub.i”.
(118) In the present embodiment, the number M of sections A is larger than the number N of detection electrodes E (M>N). Hereinafter, the sections A are sometimes referred to as “sections A.sub.j” so as to be distinguished from one another. Note that “j” represents an integer of 1 to M.
(119) The input device according to the present embodiment configures M pieces of element data P.sub.1 through P.sub.M indicative of degrees of proximity of the object in each of the M sections A.sub.1 through A.sub.M on the basis of the N pieces of detection data S.sub.1 through S.sub.N. Hereinafter, the M pieces of element data P.sub.1 through P.sub.M are sometimes collectively referred to as “element data P”.
(120) A certain relationship is established between the M pieces of element data P.sub.1 through P.sub.M and the N pieces of detection data S.sub.1 through S.sub.N. That is, each of the M pieces of element data P.sub.1 through P.sub.M is expressed as a sum of partial element data U distributed to the respective N pieces of detection data S.sub.1 through S.sub.N at predetermined proportions. When partial element data U distributed from element data P.sub.j to detection data S.sub.i is “U.sub.ij”, the element data P.sub.j is expressed by the following formula.
(121)
(122) A single piece of partial element data U.sub.ij is approximate to electrostatic capacitance CE (second electrostatic capacitance,
(123) Each of the N pieces of detection data S.sub.1 through S.sub.N is approximate to a sum of partial element data U.sub.ij distributed from the M pieces of element data P.sub.1 through P.sub.M at predetermined proportions. The detection data S.sub.i is expressed by the following formula.
(124)
(125)
(126) In the input device according to the present embodiment, it is assumed that a proportion of partial element data U.sub.ij distributed to a single piece of detection data S.sub.i in a single piece of element data P.sub.j is constant. When this predetermined proportion is “constant data K.sub.ij”, the constant data K.sub.ij is expressed by the following formula.
(127)
(128) The constant data K.sub.ij corresponds to an area ratio of a partial electrode B of a single detection electrode E.sub.i located in a section A.sub.j to all partial electrodes B located in the section A.sub.j.
(129) By substituting the partial element data U.sub.ij derived from the formula (3) into the formula (2), the detection data S.sub.i is expressed by the following formula.
(130)
(131)
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(133) An N×M matrix (a first conversion matrix K) on the left-hand side of the formula (5) is known data decided by a configuration of the sensor unit 10 such as a combination of layouts of the partial electrodes B in the plurality of sections A and areas of partial electrodes B disposed in each of the sections A.
(134) Processing Unit 20
(135) The processing unit 20 is a circuit that controls overall operation of the input device and is, for example, configured to include a computer that executes processing in accordance with a command code of a program 31 stored in the storage unit 30 and a logic circuit that realizes a specific function. The whole processing of the processing unit 20 may be realized based on a program on the computer or part of or a whole of the processing may be realized by a dedicated logic circuit.
(136) In the example of
(137) The control unit 21 controls a detection timing of the sensor unit 10. For example, the control unit 21 controls each circuit in the sensor unit 10 so that selection of a detection region R in which detection is to be executed, sampling of an analog signal obtained as a detection result, generation of detection data S by A/D conversion, and the like are performed at appropriate timings.
(138) The element data configuring unit 22 configures M pieces of element data P.sub.1 through P.sub.M corresponding to the M sections A on the basis of N pieces of detection data generated by the sensor unit 10.
(139) The element data configuring unit 22 converges the M pieces of element data P.sub.1 through P.sub.M into certain values by repeating data configuring processing described below a predetermined number of times.
(140) First, the data configuring processing is described.
(141) The element data configuring unit 22 calculates assumed values SA.sub.1 through SA.sub.N of N pieces of detection data as sums of partial element data U.sub.ij distributed from each of assumed values PA.sub.1 through PA.sub.M of M pieces of element data at the predetermined proportions (the constant data K.sub.ij) in a single data configuring processing. Then, the element data configuring unit 22 modifies the assumed values PA.sub.1 through PA.sub.M of the M pieces of element data on the basis of the N×M pieces of constant data K.sub.ij so that the calculated assumed values SA.sub.1 through SA.sub.N of the N pieces of detection data approach the N pieces of detection data S.sub.1 through S.sub.N that are a detection result of the sensor unit 10.
(142) Specifically, this data configuring processing includes four kinds of processing (first through fourth processing).
(143) First Processing
(144) In the first processing, the element data configuring unit 22 converts assumed values PA.sub.1 through PA.sub.M of the M pieces of element data into assumed values SA.sub.1 through SA.sub.N of the N pieces of detection data on the basis of the N×M pieces of constant data K.sub.ij that are known data. This conversion is expressed by the following formula by using the first conversion matrix K on the basis of the relationship of the formula (5).
(145)
(146)
(147) Second Processing
(148) In the second processing, the element data configuring unit 22 calculates N first coefficients α.sub.1 through α.sub.N indicative of magnifications to be multiplied with the assumed values SA.sub.1 through SA.sub.N of the N pieces of detection data so that the assumed values SA.sub.1 through SA.sub.N of the N pieces of detection data become equal to the N pieces of detection data S.sub.1 through S.sub.N. The first coefficient α.sub.i is expressed by the following formula.
(149)
(150) Calculation of the first coefficient α.sub.1 through α.sub.N in the second processing is expressed by using a matrix as follows.
(151)
Third Processing
(152) In the third processing, the element data configuring unit 22 calculates M second coefficients β.sub.1 through β.sub.M indicative of magnifications to be multiplied with the assumed values PA.sub.1 through PA.sub.M of the M pieces of element data. That is, the element data configuring unit 22 converts the N first coefficients α.sub.1 through α.sub.N into the M second coefficients β.sub.1 through β.sub.M on the basis of the N×M pieces of constant data K.sub.ij.
(153) As indicated by the formula (3), the partial element data U.sub.ij distributed from the element data P.sub.j to the detection data S.sub.i occupies a proportion corresponding to the constant data K.sub.ij relative to the whole element data P.sub.j. As the constant data K.sub.ij becomes larger, correlation between the element data P.sub.j and the detection data S.sub.i becomes higher. Accordingly, it is estimated that as the constant data K.sub.ij becomes larger, correlation between the first coefficient α.sub.i and the second coefficient β.sub.j also becomes higher. In view of this, the element data configuring unit 22 calculates the second coefficient β.sub.j not by simply averaging the N first coefficients α.sub.1 through α.sub.N but by averaging the N first coefficients α.sub.1 through α.sub.N while giving weights of the constant data K.sub.ij to each of the first coefficients α.sub.1 through α.sub.N. That is, the second coefficient β.sub.j is expressed by the following formula.
(154)
(155)
(156)
(157) An M×N matrix (a second conversion matric K.sup.T) on the left-hand side of the formula (10) is a transposed matrix of the first conversion matrix K.
(158) Fourth Processing
(159) In the fourth processing, the element data configuring unit 22 modifies the current assumed values PA.sub.1 through PA.sub.M of the element data into new assumed values PA′.sub.1 through PA′.sub.M on the basis of the M second coefficients β.sub.1 through β.sub.M obtained in the third processing.
PA′.sub.j=β.sub.jPA.sub.j (11)
(160) Calculation of the assumed values PA′.sub.1 through PA′.sub.M of the element data in the fourth processing is expressed by the following formula using a matrix.
(161)
(162) The element data configuring unit 22 acquires the assumed values PA.sub.1 through PA.sub.M as configuration results of the element data P.sub.1 through P.sub.M by repeating the data configuring processing including the above four kinds processing a predetermined number of times.
(163) The element data configuring unit 22 has been described above.
(164) The coordinate calculating unit 23 calculates coordinates, on the operation surface 11, of a position of proximity of an object (e.g., a finger or a pen) on the basis of the element data P.sub.1 through P.sub.M configurated by the element data configuring unit 22. For example, the coordinate calculating unit 23 specifies, as a region of proximity of an individual object, a region where data indicative of proximity of the object is gathered by binarizing two-dimensional data expressed by the element data P.sub.1 through P.sub.M. Then, the coordinate calculating unit 23 creates profile data in a lateral direction and a longitudinal direction of the specified region. The profile data in the lateral direction is data obtained by calculating, for each column, a sum of a group of element data P.sub.j in the longitudinal direction of the operation surface 11 and arranging the sums of the element data P.sub.j in the lateral direction of the operation surface 11. The profile data in the longitudinal direction is data obtained by calculating, for each row, a sum of a group of element data P.sub.j in the lateral direction of the operation surface 11 and arranging the sums of the element data P.sub.j in the longitudinal direction of the operation surface 11. The coordinate calculating unit 23 computes a position of a peak and a center of gravity of the element data P.sub.j for each of the profile data in the lateral direction and the profile data in the longitudinal direction. The position in the lateral direction and the position in the longitudinal direction thus computed represent coordinates of a position of proximity of the object on the operation surface 11. The coordinate calculating unit 23 causes data of the coordinates thus computed to be stored in a predetermined storage area of the storage unit 30.
(165) Storage Unit 30
(166) The storage unit 30 stores therein constant data and variable data used for processing in the processing unit 20. In a case where the processing unit 20 includes a computer, the storage unit 30 may store therein the program 31 executed on the computer. The storage unit 30 includes, for example, a volatile memory such as a DRAM or an SRAM, a non-volatile memory such as a flash memory, and a hard disk.
(167) Interface Unit 40
(168) The interface unit 40 is a circuit for exchanging data between the input device and another control device (e.g., an IC for control of an information apparatus provided with an input device). The processing unit 20 outputs information (e.g., object coordinate information, the number of objects) stored in the storage unit 30 from the interface unit 40 to a control device (not illustrated). The interface unit 40 may acquire the program 31 executed on the computer of the processing unit 20 from a non-transitory recording medium such as a USB memory, a server on a network, or the like and load the program 31 into the storage unit 30.
(169) Element data configuring processing is described with reference to the flowchart of
(170) ST200:
(171) The processing unit 20 acquires N pieces of detection data S.sub.1 through S.sub.N generated in the sensor unit 10.
(172) The ST205:
(173) The processing unit 20 acquires initial values of assumed values PA.sub.1 through PA.sub.M of element data used for the first time in a repeated loop of data configuring processing (ST215) that will be described later. For example, the element data configuring unit 22 acquires, as the initial values, constant data stored in the storage unit 30 in advance.
(174) ST210:
(175) The processing unit 20 sets a variable t indicative of the number of repetitions of the data configuring processing (ST215) to an initial value “0”.
(176) ST215:
(177) The processing unit 20 performs the data configuring processing including four kinds of processing (the first through fourth processing).
(178) First, in the first processing (ST220), the processing unit 20 calculates assumed values SA′.sub.1 through SA.sub.N of N pieces of detection data according to the formula (6) on the basis of the assumed values PA′.sub.1 through PA.sub.M of the M pieces of element data and the first conversion matrix K.
(179) Next, in the second processing (ST225), the processing unit 20 calculates N first coefficients α.sub.1 through α.sub.N according to the formula (8) on the basis of the assumed values SA.sub.1 through SA.sub.N of the N pieces of detection data and the N pieces of detection data S.sub.1 through S.sub.N.
(180) Next, in the third processing (ST230), the processing unit 20 calculates M second coefficients β.sub.1 through β.sub.M according to the formula (10) on the basis of the N first coefficients α.sub.1 through α.sub.N and the second conversion matrix K.sup.T.
(181) Next, in the fourth processing (ST235), the processing unit 20 modifies each of the assumed values PA.sub.1 through PA.sub.M of the M pieces of element data according to the formula (12) using the second coefficients β.sub.1 through β.sub.M.
(182) ST240:
(183) The processing unit 20 increments the variable t by 1 every time the data configuring processing (ST215) is executed one time.
(184) ST245:
(185) The processing unit 20 executes the data configuring processing (ST215) again in a case where the variable t indicative of the number of times of execution of the data configuring processing (ST215) has not reached L, and shifts to next step ST250 in a case where the variable t has reached L.
(186) ST250:
(187) The processing unit 20 acquires, as configuration results of the element data P.sub.1 through P.sub.M, assumed values PA.sub.j of element data obtained by repetition of the data configuring processing (ST215).
(188) As described above, according to the input device according to the present embodiment, the partial electrodes B of a plurality of detection electrodes E are disposed in each of the M sections A.sub.1 through A.sub.M that divide the operation surface 11, and one or more pieces of detection data S are generated for each of the detection electrodes E in the sensor unit 10. Accordingly, detection data S indicative of a degree of proximity of an object is generated for each of the M sections A.sub.1 through A.sub.M.
(189) Furthermore, each of the M pieces of element data P.sub.1 through P.sub.M is a sum of partial element data U.sub.ij (the formula (1)) distributed to the N pieces of detection data S.sub.1 through S.sub.N at predetermined proportions (the constant data K.sub.ij, the formula (3)), and each of the N pieces of detection data S.sub.1 through S.sub.N is approximate to a sum of partial element data U.sub.ij (the formula (2)) distributed from the M pieces of element data P.sub.1 through P.sub.M at predetermined proportions (the constant data K.sub.ij). That is, conversion from the M pieces of element data P.sub.1 through P.sub.M into N pieces of detection data S.sub.1 through S.sub.N is defined by N pieces of constant data K.sub.ij set for each of the M pieces of element data P.sub.1 through P.sub.M (the formula (5)).
(190) In the data configuring processing of the element data configuring unit 22, each of assumed values SA.sub.1 through SA.sub.N of N pieces of detection data is calculated as a sum of partial element data U.sub.ij distributed from each of assumed values PA.sub.1 through PA.sub.M of M pieces of element data at predetermined proportions (the constant data K.sub.ij) (the formula (6)). Furthermore, the assumed values PA.sub.1 through PA.sub.M of the M pieces of element data are modified on the basis of M×N pieces of constant data K.sub.ij so that the calculated assumed values SA.sub.1 through SA.sub.N of the N pieces of detection data approach the N pieces of detection data S.sub.1 through S.sub.N. By repeating the data configuring processing a predetermined number of times, convergent values of the M pieces of element data that match the N pieces of detection data S.sub.1 through S.sub.N can be obtained.
(191) The present invention is not limited to the above embodiments only and encompasses various variations that can be easily arrived at by a person skilled in the art.
(192) In the drawings of the embodiments above, a wide gap is provided between partial electrode groups so that wiring can be easily seen, but the width of this gap is arbitrary, and partial electrode groups may be disposed closer to each other. Note that wiring in a first layer and a partial electrode that are connected to each other may be patterned as an integral member. Furthermore, partial electrodes in adjacent sections that are connected to each other may be patterned as an integral member.
(193) The configurations and layouts of detection electrodes, the shapes and wiring patterns of partial electrodes, and the like described in the above embodiments are merely examples, and the present invention is not limited to these examples.