CHEMICAL-MECHANICAL POLISHING SOLUTION

Abstract

The present invention discloses a chemical mechanical polishing slurry, and the chemical mechanical polishing slurry comprises silica abrasive particles and accelerating agents, wherein the accelerating agents are selected from pyridine compound, piperidine compound, pyrrolidine compound or pyrrole compound and their derivatives, which have one or more carboxyl groups, and pyrimidine compound and its derivatives, which have one or more amino groups. The chemical mechanical polishing slurry can simultaneously increase the removal rate of both silicon nitride and polysilicon.

Claims

1. A chemical mechanical polishing slurry, characterized in that the chemical-mechanical polishing slurry comprises silica abrasive particles and accelerating agents; wherein, the accelerating agents are selected from pyridine compound, piperidine compound, pyrrolidine compound or pyrrole compound and their derivatives, which have one or more carboxyl groups, and pyrimidine compound and its derivatives, which have one or more amino groups.

2. The chemical mechanical polishing slurry according to claim 1, wherein the mass percent concentration of the silica particles is 1˜15%.

3. The chemical mechanical polishing slurry according to claim 2, wherein the mass percent concentration of the silica particles is 1˜10%.

4. The chemical mechanical polishing slurry according to claim 1, wherein the pyridine compound, piperidine compound, pyrrolidine compound or pyrrole compound and their derivatives, which have one or more carboxyl groups, are selected from one or more of 2-carboxyl pyridine, 3-carboxyl pyridine, 4-carboxyl pyridine, 2,3-dicarboxyl pyridine, 2,4-dicarboxyl pyridine, 2,6-dicarboxyl pyridine, 3,5-dicarboxyl pyridine, 2-carboxyl piperidine, 3-carboxyl piperidine, 4-carboxyl piperidine, 2,3-dicarboxyl piperidine, 2,4-dicarboxyl piperidine, 2,6-dicarboxyl piperidine, 3,5-dicarboxyl piperidine, 2-carboxyl pyrrolidine, 3-carboxyl pyrrolidine, 2,4-dicarboxyl pyrrolidine, 2,5-dicarboxyl pyrrolidine, 2-carboxyl pyrrole, 3-carboxyl pyrrole, 2,5-dicarboxyl pyrrole and 3,4-dicarboxyl pyridine.

5. The chemical mechanical polishing slurry according to claim 4, wherein the mass percent concentration of the pyridine compound, piperidine compound, pyrrolidine compound or pyrrole compound and their derivatives, which have one or more carboxyl groups, is 0.01˜1%.

6. The chemical mechanical polishing slurry according to claim 5, wherein the mass percent concentration of the pyridine compound, piperidine compound, pyrrolidine compound or pyrrole compound and their derivatives, which have one or more carboxyl groups, is 0.05˜0.6%.

7. The chemical mechanical polishing slurry according to claim 1, wherein the pyrimidine compound and its derivatives, which have one or more amino groups, are selected from one or more of 2-aminopyrimidine, 4-aminopyrimidine, 2,4-diaminopyrimidine, 2,4,5-triaminopyrimidine and their derivatives.

8. The chemical mechanical polishing slurry according to claim 7, wherein the mass percent concentration of the pyrimidine compound and its derivatives, which have one or more amino groups, is 0.01˜1%.

9. The chemical mechanical polishing slurry according to claim 8, wherein the mass percent concentration of the pyrimidine compound and its derivatives, which have one or more amino groups, is 0.02%˜0.6%.

10. The chemical mechanical polishing slurry according to claim 1, wherein the pH value of the chemical mechanical polishing slurry is 2-6.

Description

DETAILED DESCRIPTION OF THE PREFERRED EXAMPLES

[0017] The present invention is further described in the way of examples, but the present invention is not limited to the scope of the examples.

[0018] The chemical mechanical polishing slurry according to the formulation of Table 1 is experimented according to the following experimental conditions.

[0019] Specific polishing conditions: polisher: LK, pad: IC1010, rotation speed: 93/87 rpm, polishing pressure: 3.0 psi, polishing flow rate: 300 ml/min. To input the above parameters into the LK Polisher, 12″ silicon nitride and polysilicon wafers are polished for 1 min, and then cleaned, dried and measured to get the polishing results.

TABLE-US-00001 TABLE 1 the formula and the polishing results of the comparative examples 1-2 and the examples 1-8 abrasive particle carboxyl compound polishing concentration concentration pyrimidine compound slurry name (%) name (%) name comparative SiO.sub.2 2 example 1 comparative SiO.sub.2 2 2-carboxypyridine 0.2 example 2 Example 1 SiO.sub.2 1 2-carboxypyridine 0.01 2-aminopyrimidine Example 2 SiO.sub.2 2 2,6-dicarboxypyridine 0.05 4-aminopyrimidine Example 3 SiO.sub.2 5 3-carboxyl-piperidine 0.1 2,4-diaminopyrimidine Example 4 SiO.sub.2 7 2,4-dicarboxyl-piperidine 0.3 2,4,5-triaminopyrimidine Example 5 SiO.sub.2 8 2-carboxyl-pyrrolidine 0.6 2-aminopyrimidine Example 6 SiO.sub.2 10 2,5-dicarboxyl-pyrrolidine 0.8 2-aminopyrimidine Example 7 SiO.sub.2 12 2-carboxyl-pyrrole 1 2-aminopyrimidine Example 8 SiO.sub.2 15 2,5-dicarboxyl-pyrrolidine 0.2 2-aminopyrimidine removal rate of removal pyrimidine compound Silicon rate of polishing concentration Nitride Polysilicon slurry (%) pH (Å/min) (Å/min) comparative 5.0 94 452 example 1 comparative 5.0 1050 461 example 2 Example 1 1 5.0 643 1352 Example 2 0.1 2.0 925 1687 Example 3 0.02 3.1 1523 2216 Example 4 0.01 4.5 1756 2649 Example 5 0.6 3.4 1821 2452 Example 6 0.3 5.2 2357 2766 Example 7 0.2 2.8 1638 2389 Example 8 0.2 6.0 1849 2853

[0020] The polishing results of the comparative example 1 and 2 in Table 1 reveal that the addition of pyridine compound, piperidine compound, pyrrolidine compound or pyrrole compound, which have carboxyl groups, greatly increases the removal rate of silicon nitride. The polishing results of the comparative example 2 and examples 1-8 reveal that the addition of pyrimidine compound significantly increases the removal rate of polysilicon. Compared with the comparative example 1 and 2, examples 1-8 reveal that the polishing slurry can concurrently increase the removal rate of silicon nitride and polysilicon by adding carboxyl compounds and pyrimidine compounds at pH 2-6.

[0021] It should be noted that the examples of the present invention are of good operability, but not for constituting any limitation to the protection scope thereof. Any person skilled in the art can make alterations or modifications to the examples by the aforementioned technical contents, to form an equivalent and effective example. Any amendments, equivalent changes and modifications to the above-mentioned examples based on the technical essence of the present invention, without departing from the technical solutions of the present invention, shall belong to the scope defined by the technical solutions of the present invention.