LIGHT CONVERSION MATERIAL, PRODUCING METHOD THEREOF, LIGHT-EMITTING DEVICE AND BACKLIGHT MODULE EMPLOYING THE SAME
20210167257 · 2021-06-03
Inventors
- Yi-Ting Tsai (Hsinchu, TW)
- Hung-Chia Wang (Hsinchu, TW)
- Hung-Chun Tong (Hsinchu, TW)
- Yu-Chun Lee (Hsinchu, TW)
- Tzong-Liang Tsai (Hsinchu, TW)
Cpc classification
G02F1/133614
PHYSICS
H01L33/504
ELECTRICITY
International classification
Abstract
A light conversion material includes a general formula and complies with a condition. The general formula is MmAaCcEe:ESxREy. M is at least one element selected from a group, and 2≤m≤3. A is at least one element selected from a group, and 0.01≤a≤1. C is at least one element selected from a group, and 1≤c≤9, E is at least one element selected from a group, and 5≤e≤7. ES is at least one element selected from a group, and 0≤x≤3. RE is at least one element selected from a group, and 0≤y≤3. The condition (2) is m+x+y=3.
Claims
1. A light conversion material, comprising a general formula (1) and complying with a condition (2), wherein the general formula (1) is M.sub.mA.sub.aC.sub.cE.sub.e:ES.sub.xRE.sub.y, M is at least one element selected from a group consisting of Ca, Sr, and Ba, wherein 2≤m≤3, A is at least one element selected from a group consisting of Mg, Mn, Zn, and Cd, wherein 0.01≤a≤1, C is at least one element selected from a group consisting of Si, Ge, Ti, and Hf, wherein 1≤c≤9, E is at least one element selected from a group consisting of O, S, and Se, wherein 5≤e≤7, ES is at least one element selected from a group consisting of divalent Eu, Sm, and Yb, wherein 0≤x≤3, and RE is at least one element selected from a group consisting of trivalent Ce, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er, and Tm, wherein 0≤y≤3, and the condition (2) is m+x+y=3.
2. The light conversion material of claim 1, wherein the light conversion material is configured to be excited by blue light or ultraviolet light to emit light, and a peak wavelength of the light is ranging from about 480 nm to about 580 nm.
3. The light conversion material of claim 2, further complying with a condition (3), wherein the condition (3) is that the light has a maximum intensity, a difference between a maximum wavelength λ.sub.1max and a minimum wavelength λ.sub.1min of the light is a′ when an intensity of the light is 50% of the maximum intensity, and another difference between a maximum wavelength λ.sub.2max and a minimum wavelength λ.sub.2min of the light is b′ when an intensity of the light is 10% of the maximum intensity, wherein 2.5a′≤b′≤7a′.
4. The light conversion material of claim 1, wherein the light conversion material comprises a polycrystalline structure.
5. A light-emitting device, comprising: a light source emitting blue light or ultraviolet light; and a light conversion material excited by the blue light or the ultraviolet light to emit light, comprising a general formula (1) and complying with a condition (2), wherein the general formula (1) is M.sub.mA.sub.aC.sub.cE.sub.e:ES.sub.xRE.sub.y, M is at least one element selected from a group consisting of Ca, Sr, and Ba, wherein 2 m 3, A is at least one element selected from a group consisting of Mg, Mn, Zn, and Cd, wherein 0.01≤a≤1, C is at least one element selected from a group consisting of Si, Ge, Ti, and Hf, wherein 1≤c≤9, E is at least one element selected from a group consisting of O, S, and Se, wherein 5≤e≤7, ES is at least one element selected from a group consisting of divalent Eu, Sm, and Yb, wherein 0≤x≤3, and RE is at least one element selected from a group consisting of trivalent Ce, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er, and Tm, wherein 0≤y≤3, and the condition (2) is m+x+y=3.
6. The light-emitting device of claim 5, wherein the light conversion material further complies with a condition (3), the condition (3) is that the light has a maximum intensity, and a difference between a maximum wavelength λ.sub.1max and a minimum wavelength λ.sub.1min of the light is a′ when an intensity of the light is 50% of the maximum intensity, another difference between a maximum wavelength λ.sub.2max and a minimum wavelength λ.sub.2min of the light is b′ when an intensity of the light is 10% of the maximum intensity, wherein 2.5a′≤b′≤7a′.
7. The light-emitting device of claim 5, wherein the light conversion material comprises a polycrystalline structure.
8. The light-emitting device of claim 5, wherein the light conversion material is further mixed with a red-emitting material when the light source emits the blue light.
9. The light-emitting device of claim 8, wherein the light conversion material is further mixed with a green-emitting material.
10. The light-emitting device of claim 5, wherein the light conversion material is further mixed with a red-emitting material and a blue-emitting material when the light source emits the ultraviolet light.
11. The light-emitting device of claim 10, wherein the light conversion material is further mixed with a green-emitting material.
12. A backlight module, comprising the light-emitting device of claim 5.
13. A producing method for producing the light conversion material of claim 1, the producing method comprising: producing a first mixture by raw materials of M, A, C, and E according to the general formula (1) of the light conversion material; performing a first high-temperature process to the first mixture to produce a first product; producing a second mixture by the first product and raw materials of at least one of ES and RE according to the general formula (1) of the light conversion material; and performing a second high-temperature process to the second mixture under a reducing atmosphere to produce the light conversion material.
14. The producing method of claim 13, wherein the first high-temperature process is a sintering process ranging from about 200° C. to about 600° C.
15. The producing method of claim 13, wherein the second high-temperature process is a calcination process ranging from about 800° C. to about 1400° C.
16. The producing method of claim 13, further comprising: growing a seed crystal in the first mixture before performing the first high-temperature process to the first mixture.
17. The producing method of claim 16, wherein the first high-temperature process is a sintering process ranging from about 200° C. to about 600° C.
18. The producing method of claim 16, wherein the second high-temperature process is a calcination process ranging from about 800° C. to about 1400° C.
Description
BRIEF DESCRIPTION OF THE DRAWINGS
[0024] The disclosure can be more fully understood by reading the following detailed description of the embodiment, with reference made to the accompanying drawings as follows:
[0025]
[0026]
[0027]
[0028]
[0029]
[0030]
DETAILED DESCRIPTION
[0031] Reference will now be made in detail to the present embodiments of the disclosure, examples of which are illustrated in the accompanying drawings. Wherever possible, the same reference numbers are used in the drawings and the description to refer to the same or like parts.
[0032] In various embodiments, description is made with reference to figures. However, certain embodiments may be practiced without one or more of these specific details, or in combination with other known methods and configurations. In the following description, numerous specific details are set forth, such as specific configurations, dimensions and processes, etc., in order to provide a thorough understanding of the present disclosure. In other instances, well-known semiconductor processes and manufacturing techniques have not been described in particular detail in order to not unnecessarily obscure the present disclosure. Reference throughout this specification to “one embodiment,” “an embodiment”, “some embodiments” or the like means that a particular feature, structure, configuration, or characteristic described in connection with the embodiment is included in at least one embodiment of the disclosure. Thus, the appearances of the phrase “in one embodiment,” “in an embodiment”, “in some embodiments” or the like in various places throughout this specification are not necessarily referring to the same embodiment of the disclosure. Furthermore, the particular features, structures, configurations, or characteristics may be combined in any suitable manner in one or more embodiments.
[0033] The terms “over,” “to,” “between” and “on” as used herein may refer to a relative position of one layer with respect to other layers. One layer “over” or “on” another layer or bonded “to” another layer may be directly in contact with the other layer or may have one or more intervening layers. One layer “between” layers may be directly in contact with the layers or may have one or more intervening layers.
[0034] The present disclosure provides a light conversion material having high color purity. The light conversion material includes a general formula (1) and complies with a condition (2). The general formula (1) is M.sub.mA.sub.aC.sub.cE.sub.e:ES.sub.xRE.sub.y. M is at least one element selected from a group consisting of Ca, Sr, and Ba, and 2≤m≤3. A is at least one element selected from a group consisting of Mg, Mn, Zn, and Cd, and 0.01≤a≤1. C is at least one element selected from a group consisting of Si, Ge, Ti, and Hf, and 1≤c≤9, E is at least one element selected from a group consisting of O, S, and Se, and 5≤e≤7. ES is at least one element selected from a group consisting of divalent Eu, Sm, and Yb, and 0≤x≤3. RE is at least one element selected from a group consisting of trivalent Ce, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er, and Tm, and 0≤y≤3. The condition (2) is m+x+y=3. The composition and the proportion of the light conversion material can be adjusted by users so as to control wavelengths and color purity of light emitted by the excited light conversion material. Therefore, the wavelengths of the light emitted by the light conversion material in the present disclosure can be changed.
[0035] A group consisting of divalent Eu, Sm, and Yb refers to a group consisting of Eu.sup.2+, Sm.sup.2+, and Yb.sup.2+. A group consisting of trivalent Ce, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er, and Tm refers to a group consisting of Ce.sup.3+, Pr.sup.3+, Nd.sup.3+, Sm.sup.3+, Eu.sup.3+, Gd.sup.3+, Tb.sup.3+, Dy.sup.3+, Ho.sup.3+, Er.sup.3+, and Tm.sup.3+.
[0036] Reference is made to
[0037] In some embodiments in the present disclosure, the light conversion material complies with a condition (3). The condition (3) is that the green light has a maximum intensity, and a difference between a maximum wavelength λ.sub.1max and a minimum wavelength λ.sub.1min of the green light is a′ when an intensity of the green light is 50% of the maximum intensity, another difference between a maximum wavelength λ.sub.2max and a minimum wavelength λ.sub.2min of the green light is b′ when the intensity of the green light is 10% of the maximum intensity, wherein 2.5a′≤b′≤7a′. Therefore, differences between maximum intensities and minimum intensities of the green light in different intensities are small. Moreover, a′ represents a full wave half maximum (FWHM), wherein 30 nm≤a′<50 nm. Thus, the green light emitted by the light conversion material in the present disclosure has a narrow FWHM. It can be known that the light conversion material has good lumen efficacy and the green light emitted thereof has high color purity.
[0038] Moreover, in some embodiments of the present disclosure, the light conversion material has a polycrystalline structure and includes at least one polycrystalline phase.
[0039] Reference is made to
[0040] Reference is made to
[0041] Some embodiments in the present disclosure relate to a light-emitting device. The light-emitting device includes a light source and a light conversion material, and the light source is configured to emit blue light or ultraviolet light. The light conversion material is excited by the blue light or the ultraviolet light to emit green light having a peak wavelength ranging from about 480 nm to about 580 nm, wherein a preferred peak wavelength of the green light ranges from about 520 nm to about 540 nm. The light conversion material includes a general formula (1) and complies with a condition (2). The general formula (1) is M.sub.mA.sub.aC.sub.cE.sub.e:ES.sub.xRE.sub.y. M is at least one element selected from a group consisting of Ca, Sr, and Ba, and 2≤m≤3. A is at least one element selected from a group consisting of Mg, Mn, Zn, and Cd, and 0.01≤a≤1. C is at least one element selected from a group consisting of Si, Ge, Ti, and Hf, and 1≤c≤9. E is at least one element selected from a group consisting of O, S, and Se, and 5≤e≤7. ES is at least one element selected from a group consisting of divalent Eu, Sm, and Yb, and 0≤x≤3. RE is at least one element selected from a group consisting of trivalent Ce, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er, and Tm, and 0≤y≤3. The condition (2) is m+x+y=3. Specifically, the light-emitting device may be a light-emitting diode (LED).
[0042] Reference is made back to
[0043] In regard to the light-emitting device in some embodiments of the present disclosure, the light conversion material has a polycrystalline structure and includes at least one polycrystalline phase.
[0044] In regard to the light-emitting device in some embodiments of the present disclosure, the light conversion material is further mixed with a red-emitting material when the light source emits the blue light. The light conversion material in the present disclosure and the red-emitting material are excited by the blue light to emit green light and red light in order to be combined with the blue light to become white light.
[0045] In regard to the light-emitting device in some embodiments of the present disclosure, the light conversion material is further mixed with a red-emitting material and a green-emitting material when the light source emits the blue light. The light conversion material in the present disclosure, the green-emitting material, and the red-emitting material are excited by the blue light to emit green light and red light in order to be combined with the blue light to become white light.
[0046] In regard to the light-emitting device in some embodiments of the present disclosure, the light conversion material is further mixed with a red-emitting material and a blue-emitting material when the light source emits the ultraviolet light. The light conversion material in the present disclosure, the red-emitting material, and the blue-emitting material are excited by the ultraviolet light to emit green light, red light, and blue light in order to be combined together to become white light.
[0047] In regard to the light-emitting device in some embodiments of the present disclosure, the light conversion material is further mixed with a red-emitting material, a blue-emitting material, and a green-emitting material when the light source emits the ultraviolet light. The light conversion material in the present disclosure, the green-emitting material, the red-emitting material, and the blue-emitting material are excited by the ultraviolet light to emit green light, red light, and blue light in order to be combined together to emit white light.
[0048] In regard to the light-emitting device in some embodiments of the present disclosure, the red-emitting material may be red-emitting phosphor powder, such as nitride phosphor powder ((Sr,Ca)AlSiN.sub.3:Eu, Ca.sub.2Si.sub.5N.sub.8:Eu.sup.2+, and Sr(LiAl.sub.3N.sub.4):Eu.sup.2+) and manganese-doped red fluoride phosphor powder (K.sub.2GeF.sub.6:Mn.sup.4+, K.sub.2SiF.sub.6:Mn.sup.4+, and K.sub.2TiF.sub.6:Mn.sup.4+), but the present disclosure is not limited in this respect. The red-emitting material may also be red-emitting Quantum Dots, such as indium phosphide (InP) Quantum Dots, cadmium selenide (CdSe) Quantum Dots, and all-inorganic perovskite Quantum Dots having a general formula: CsPb(Br.sub.1-c′I.sub.c′).sub.3 and 0.5≤c′≤1. The present disclosure is not limited in this respect.
[0049] In regard to the light-emitting device in some embodiments of the present disclosure, the green-emitting material may be green-emitting phosphor powder, such as lutetium aluminium garnet (LuAG) phosphor powder, YAG phosphor powder, β-SiAlON phosphor powder, and silicate phosphor powder, but the present disclosure is not limited in this respect. The green-emitting material may also be green-emitting Quantum Dots, such as CdSe Quantum Dots, cadmium sulfide (CdS) Quantum Dots, cadmium telluride (CdTe) Quantum Dots, InP Quantum Dots, indium nitride (InN) Quantum Dots, indium aluminium nitride (AlInN) Quantum Dots, indium gallium nitride (InGaN) Quantum Dots, aluminium gallium nitride (AlGaInN) Quantum Dots, copper indium gallium selenide (CuInGaSe) Quantum Dots, and all-inorganic perovskite Quantum Dots having a general formula: CsPb(Br.sub.1-d′I.sub.d′).sub.3 and 0≤d′<0.5. The present disclosure is not limited in this respect.
[0050] In regard to the light-emitting device in some embodiments of the present disclosure, the blue-emitting material may be BAM (BaMgAl.sub.10O.sub.17:Eu.sup.2+) phosphor powder, but the present disclosure is not limited in this respect. The blue-emitting material may also be blue emitting Quantum Dots, such as CdSe Quantum Dots, zinc selenide (ZnSe) Quantum Dots, and all-inorganic perovskite Quantum Dots having a general formula: CsPb(Cl.sub.e′Br.sub.1-e′).sub.3 and 0<e′≤1. The present disclosure is not limited in this respect.
[0051] The present disclosure also provides a backlight module including a light-emitting device, and the details about the light-emitting device herein are basically the same as the aforementioned light-emitting device. Specifically, the backlight module is disposed in a Liquid-Crystal Display (LCD) to provide a backlight source.
[0052] Reference is now made to
[0053] Specifically, the raw materials of the elements M, A, C, and E may be oxygen compounds thereof, sulfur compounds thereof, carbonate compounds thereof, or salts thereof. For instance, if M in the formula (1) represents Ba, the raw material thereof may be barium oxide (BaO) or barium carbonate (BaCO.sub.3). Moreover, the first high-temperature process is a sintering process ranging from about 200° C. to about 600° C. in the step 104. The second high-temperature process is a calcination process ranging from about 800° C. to about 1400° C. in the step 108.
[0054] Reference is now made to
[0055] Reference is made back to
[0056] In summary, it is known from the above embodiments and contents that the present disclosure provides a light conversion material having a narrow spectral width, so that the light conversion material has good lumen efficacy and the green light emitted thereof has high color purity. Therefore, the light conversion material in the present disclosure can improve the lumen efficacy of a light-emitting device and a backlight module employing the same to emit light having higher color purity.
[0057] Although the present disclosure has been described in considerable detail with reference to certain embodiments thereof, other embodiments are possible. Therefore, the spirit and scope of the appended claims should not be limited to the description of the embodiments contained herein.
[0058] It will be apparent to those skilled in the art that various modifications and variations can be made to the structure of the present disclosure without departing from the scope or spirit of the disclosure. In view of the foregoing, it is intended that the present disclosure cover modifications and variations of this disclosure provided they fall within the scope of the following claims.