MASKING A ZONE AT THE EDGE OF A DONOR SUBSTRATE DURING AN ION IMPLANTATION STEP

Abstract

A process for forming a predetermined separation zone inside a donor substrate, in particular, to be used in a process of transferring a layer onto a carrier substrate comprises an implantation step that is carried out such that the implantation dose in a zone of the edge of the donor substrate is lower than the implantation dose in a central zone of the donor substrate to limit the formation of particles during thermal annealing. The present disclosure also relates to a donor substrate for a process of transferring a thin layer onto a carrier substrate produced by means of the process described above. The present disclosure also relates to a device for limiting an implantation region to a zone of the edge of a donor substrate.

Claims

1. A process for forming a predetermined separation zone inside a donor substrate to be used in a process of transferring a layer onto a carrier substrate, comprising: implantation of atoms and/or ions into a donor substrate such that an implantation dose in a zone of an edge of the donor substrate is lower than an implantation dose in a central zone of the donor substrate.

2. The process of claim 1, wherein the implantation of the atoms and/or ions is carried out such that the implantation is limited to the central zone of the donor substrate.

3. The process of claim 1, for wherein the zone of the edge of the donor substrate comprises a chamfered zone on the edge of the donor substrate.

4. The process of claim 1, wherein a width of the zone of the edge of the donor substrate is between 1 mm and 5 mm.

5. The process of claim 1, wherein the implantation of the atoms and/or ions comprises using a mask on or above the zone of the edge of the donor substrate.

6. The process of claim 1, wherein the implantation of the atoms and/or ions comprises scanning the donor substrate with an ion beam such that the implantation dose toward the zone of the edge of the donor substrate is lower than the implantation dose in the central zone of the donor substrate.

7. The method of claim 1, wherein the atoms and/or ions comprise helium ions (He) or a helium and hydrogen ions (He—H).

8. The method of claim 1, further comprising further comprising an additional implantation of atoms and/or ions carried out over the entire surface of the donor substrate, the additional implantation having an additional implantation dose lower than in the implantation dose of the implantation of atoms and/or ions.

9. The process of claim 8, wherein the implantation of atoms and/or ions comprises an implantation of helium ions, and wherein the additional implantation of atoms and/or ions comprises an implantation of hydrogen ions.

10. The process of claim 1, wherein the implantation dose in the zone of the edge of the donor substrate is lower than 1e16 at/cm.sup.2.

11. A donor substrate for a process of transferring a layer onto a carrier substrate, comprising a separation zone including implanted atoms and/or ions, an implantation dose in the separation zone being lower in a zone of the edge of the donor substrate than an implantation dose in the separation zone in a central zone of the donor substrate.

12. A process for transferring a layer of a donor substrate onto a carrier substrate, comprising the following steps: a) attaching a donor substrate to a carrier substrate, the donor substrate comprising a separation zone including implanted atoms and/or ions, an implantation dose in the separation zone being lower in a zone of the edge of the donor substrate than an implantation dose in the separation zone in a central zone of the donor substrate; and b) detaching the donor substrate along the separation zone to detach a remaining portion of the donor substrate from a layer transferred to the carrier substrate.

13. The process of claim 12, wherein step b) comprises a thermal annealing of the donor substrate.

14. Device A device for limiting an implantation region to a zone of an edge of a donor substrate, the device comprising a limiting means for carrying out an implantation of atoms and/or ions into the donor substrate such that an implantation dose in a zone of the edge of the donor substrate is lower than an implantation dose in a central zone of the donor substrate.

15. The device of claim 14, wherein the limiting means comprises a mask.

16. The device of claim 15, wherein the mask comprises a ring positioned on or above the donor substrate.

17. The device of claim 16, wherein the mask is configured to mask the zone of the edge of a donor substrate over a width between 1 mm and 5 mm.

18. An ion implanter for implanting ions into a donor substrate comprising a device according to claim 14.

19. The process of claim 1, wherein a width of the zone of the edge of the donor substrate is between 1 mm and 2 mm.

20. The process of claim 1, wherein the implantation dose in the zone of the edge of the donor substrate is between 0.5e16 at/cm.sup.2 and 1e16 at/cm.sup.2.

Description

BRIEF DESCRIPTION OF THE DRAWINGS

[0024] The present disclosure may be understood by referring to the following description together with the appended figures, wherein numerical references identify the elements of the present disclosure.

[0025] FIGS. 1a to 1f schematically show the various steps of the process of transferring a thin layer from a donor substrate onto a carrier substrate according to the present disclosure.

[0026] FIG. 2a shows a diagram for masking the edge of a substrate in an implantation step according to one variant of the present disclosure.

[0027] FIG. 2b shows a schematic view from above of a mask used for masking a zone of the edge of a substrate during the implantation according to one variant of the present disclosure.

[0028] FIG. 2c schematically shows an operation of scanning with the implantation ion beam during an implantation step according to one variant of the present disclosure.

[0029] FIGS. 3a and 3b schematically show another embodiment of the present disclosure, wherein the donor substrate is subjected to two successive implantation steps.

[0030] FIGS. 4a and 4b show a view from above and a profile view, respectively, of a donor substrate comprising a predetermined separation zone fabricated according to one variant of the present disclosure. FIG. 4c shows implantation profiles in donor substrates according to examples according to the present disclosure.

DETAILED DESCRIPTION

[0031] The process of transferring a thin layer from a donor substrate onto a carrier substrate according to the present disclosure is described in detail by FIGS. 1a to 1f. It comprises the steps of forming a predetermined separation zone in a donor substrate (FIGS. 1a to 1c), of attaching a donor substrate to a carrier substrate (FIG. 1d) and of detaching and transferring a thin layer from a donor substrate onto a carrier substrate (FIGS. 1e and 1f).

[0032] FIG. 1a shows a donor substrate 1, for example, a silicon substrate or any other semiconductor substrate, with or without other layers, such as a surface oxide. The donor substrate 1 has, on its main surface 3, a zone of the edge 5 of the substrate comprising a chamfered zone 7. Typically, the width of the chamfered zone ranges from 0.5 mm to 3 mm. The donor substrate 1 also comprises a central zone 9 delimited within the zone of the edge 5.

[0033] FIG. 1b shows a carrier substrate 11 with a main surface 13. The carrier substrate 11 is, for example, a silicon substrate or any other substrate, with or without other layers, such as a surface oxide. Like the donor substrate 1, the carrier substrate 11 may have a chamfered zone 15 on its border.

[0034] Next, such as illustrated in FIG. 1c, the donor substrate 1 is subjected to a step of implantation of ionic or atomic species 17. This implantation process introduces ionic or atomic species 17 into the donor substrate 1 with a maximum concentration at a predetermined depth d of the donor substrate 1 with respect to the bombarded surface 3, to create a weakened zone 19 therein.

[0035] The implantation of ionic or atomic species 17 may be a single implantation, i.e., the implantation of a single atomic species, such as, for example, an implantation of hydrogen, helium or any other noble gas. The implantation may also be a co-implantation of ionic or atomic species 17, i.e., an implantation of at least two different species, such as, for example, the co-implantation of helium (95 keV and 2 5e16 at/cm.sup.2) and of hydrogen (65 keV and 1.5e16 at/cm.sup.2).

[0036] The weakened zone 19 forms the border between a layer 21 and the remainder 23 of the donor substrate 1. The weakened zone 19 is also referred to hereinafter as the predetermined separation zone.

[0037] According to the present disclosure, the implantation of ionic or atomic species 17, is carried out such that the implantation dose 25 at the site of the zone of the edge 5 of the donor substrate 1 is lower than the implantation dose 27 in the central zone 9 of the donor substrate land is shown in the schematic enlargement of FIG. 1c.

[0038] According to one variant of the present disclosure, the dose of implanted ions in the zone of the edge 5 of the donor substrate 1 is less than 1e16 at/cm.sup.2 or else is even free of implanted ions.

[0039] FIG. 1d shows the step where the carrier substrate 11 is brought into contact, via one of its main surfaces 13, with the surface 3 of the donor substrate 1 so as to join the two substrates together. The bond between the donor and carrier substrates 1 and 11 is formed by molecular adhesion at the bond interface to form a multilayer stack 31. At the site of the chamfered zones 7 and 15 of the donor substrate 1 and of the carrier substrate 11, respectively, a zone without bonding 33 may be observed.

[0040] FIG. 1e shows the step of detachment from the remainder 23 of the donor substrate 1, along the weakened zone 19, so as to transfer the layer 21 onto the carrier substrate 11 in order to create the semiconductor substrate 35.

[0041] By way of example, the detachment may be carried out by means of heat treatment by subjecting the multilayer stack 31, illustrated in FIG. 1d, to a thermal annealing, during which a spontaneous detachment from the remainder 23 of the donor substrate 1 takes place along the predetermined separation zone 19. This thermal detachment is typically carried out in an oven at temperatures between 100 C and 700° C., preferably at about 500° C. As an alternative, the thermal detachment may be accompanied by a mechanical treatment, for example, by using a blade on the predetermined separation zone 19.

[0042] FIG. 1f shows the final semiconductor substrate 35, with the transferred layer 21 on the carrier substrate 11. In comparison with the layer transfer processes of the prior art, implanting fewer ions into the zone of the edge 5 with respect to the central zone 9 in the donor substrate 1 has the effect that, during the detachment, fewer particles are created both on the surface 37 of the semiconductor substrate 35 but also on the surface of the remainder 23 of the donor substrate 1.

[0043] Specifically, because of the zone without bonding 29 in the multilayer stack 31 illustrated in FIG. 1d, there is no stiffening effect in this zone and a heavy implantation of ions into the zone of the edge 5 leads to the formation of blisters and peeling during the heat treatment of the detachment step in the layer transfer processes according to the processes known in the prior art.

[0044] An effect decreasing the creation of particles is particularly visible for transfers of semiconductor layers without surface oxide.

[0045] FIG. 2a shows one embodiment of the operation of masking the zone of the edge 5 of the donor substrate 1 according to the present disclosure when a mask is used in the implantation step shown in FIG. 1c. FIG. 2b shows a mask used for masking the zone of the edge 5 of the donor substrate 1 during the implantation according to this variant of the present disclosure.

[0046] The donor substrate 1, such as described above, is placed in an implanter 41 and is subjected to an implantation of ionic or atomic species 17, such as described above. This implantation process therefore introduces the implanted ionic or atomic species 17 into the donor substrate 1 with a maximum concentration at the predetermined depth d to create the weakened zone 19 therein.

[0047] A mask 43 is placed on the donor substrate 1 to mask the zone of the edge 5 from the implantation of ionic or atomic species 17 so as to avoid the implantation of ions into this zone 15. According to this variant of the present disclosure, the mask 43 masks at least the chamfered zone 7 of the donor substrate 1. In particular, the mask 43 masks a zone of the edge 5 of the donor substrate 1 over a width I that is between 1 mm and 5 mm, in particular, between 1 and 2 mm.

[0048] According to another variant of the present disclosure, the mask 43 may also be placed above the donor substrate 1, without direct contact, but still in the path of the ion beam 45.

[0049] FIG. 2b schematically shows the mask 43 seen from above. In a non-limiting manner, the mask 43 takes the shape of a ring. Thus, the zone of the edge 5 of the donor substrate 1, such as illustrated in FIG. 2a, cannot be reached by the ions. Specifically, the ions are stopped in the mask 43.

[0050] The mask 43 may be made of Teflon, of aluminum, or of any other suitable materials. According to one variant, the mask 43 may also be a sacrificial mask made of resist, of hard oxide or of nitride on the donor substrate 1 that will be removed before the step of attaching the donor substrate to the carrier substrate.

[0051] With respect to the radius R of the donor substrate 1, the mask 43 has an inner radius r.sub.min of R minus 1 to 5 mm to be able to cover at least the chamfered zone 7 of the donor substrate 1 and an outer radius r.sub.max of at least R.

[0052] Instead of using a mask 43, the donor substrate 1 may also be implanted by scanning the ion beam 45 over the surface 3 of the donor substrate 1, as illustrated by the arrow in FIG. 2c. The motion of the ion beam 45 is controlled such that the zone at the edge 5 of the donor substrate 1 is excluded from ion implantation or contains an implantation dose that is lower than the central zone 9 of the donor substrate 1.

[0053] FIGS. 3a and 3b illustrate another embodiment of the present disclosure. Here, the donor substrate 1 is subjected to two successive implantation steps, such that the implantation dose toward a zone at the edge of the donor substrate is lower than the implantation dose in a central zone of the donor substrate. Those elements or features that share reference numerals with the above figures will not be described again in detail, but reference will be made thereto.

[0054] FIG. 3a shows the ion implantation 51 of He ions (95 keV and 2.5e16 at/cm.sup.2) using the mask 43 into the central zone 9 of the donor substrate 1 to create a separation zone 53 therein.

[0055] FIG. 3b illustrates the second ion implantation step 55 using H ions without using a mask. The hydrogen implantation dose must be lower than 2e16 at/cm.sup.2, preferably between 0.5e16 at/cm.sup.2 and 1.5e16 at/cm.sup.2. Consequently, the implanted H ions 57 are present both in the central zone 9 but also in the zone of the edge 5 of the donor substrate 1, substantially at the same depth inside the donor substrate 1 as the He ions.

[0056] FIGS. 4a and 4b show a profile view and a view from above, respectively, of a donor substrate fabricated according to the present disclosure such as described above. FIG. 4c shows the ion implantation profiles of various examples of donor substrates according to the present disclosure. Those elements or features that share reference numerals with the above figures will not be described again in detail, but reference will be made thereto.

[0057] The donor substrate 1, for example, a silicon wafer, comprises a predetermined separation zone 19 at a distance d from the main surface 3 of the donor substrate 1. The zone of the edge 5 of the donor substrate 1 comprises a chamfered zone 7, the width typically being between 0.5 and 3 mm.

[0058] FIGS. 4a and 4b also show, from the center of the main surface 3 as the origin O, the radius R of the donor substrate 1. The reference r−.Math. in FIGS. 4a and 4b represents the distance from the center O and the start of the chamfered zone 7 is located from the edge of the donor substrate 1. The reference r.sub.2 in FIGS. 4a and 4b illustrates the radius delimiting the zone of the edge 5 of the donor substrate 1, hence the region of the implantation dose starts to be lower with respect to the central zone 9 of the donor substrate 1.

[0059] The delimitation of the predetermined separation zone 19 may be correlated with the implantation profiles of the donor substrates according to the examples of FIG. 4c.

[0060] In FIG. 4c, the implantation dose c in a donor substrate is shown on the (logarithmic) Y-axis and the radial direction r with the origin 0 at the center of the donor substrate 1 is shown on the X-axis.

Example 1

[0061] The line 81 represents the implantation profile in the donor substrate 1 according to a first example of the present disclosure. The He ions are implanted with an implantation dose c1 (95 keV and 2.5e16 at/cm.sup.2) using a mask 43 such as shown in FIG. 2d to mask the zone of the edge 5 of the donor substrate 1 that corresponds to the chamfered zone 7 of the donor substrate 1.

[0062] In this case r−, =r.sub.2 and the central zone 9 of the donor substrate 1 that is implanted with the implantation dose c1 extends from the center O up to r{circumflex over ( )}. From the distance {umlaut over ({acute over (.Math.)})}{circumflex over ( )}, the implantation dose quickly becomes zero given that the mask 43 has masked the zone of the edge 5 from this distance r−i.

Example 2

[0063] According to a second example according to the present disclosure, the mask 43 may be chosen such that the zone of the edge 5 of the donor substrate 1, where the implantation dose of He ions is lower than the implantation dose of the central zone 9, is wider than the chamfered zone 7 of the donor substrate 1. Hence r.sub.2<r−.

[0064] Thus, the mask 43 to be used for the second example has an inner radius r.sub.min that is smaller than r−, and hence smaller than that of the first example. FIG. 4c represents the implantation profile of this example with the dotted line 83. Up to r<r.sub.2, the implantation dose is c1 as in the first example. For r>r.sub.2, the dose of implanted ions becomes zero.

[0065] The width, i.e., R−r.sub.2, of the zone of the edge 5 of the donor substrate 1 that is masked from the implantation is between 1 mm and 5 mm, in particular, between 1 and 2 mm, to cover at least the chamfered zone 7 (as in example 1) and consequently the predetermined separation zone 19 present in the donor substrate 1 is free of implanted ions into this zone of the edge 5.

[0066] Given that the donor substrate 1 has a zone free of implanted ions in both examples, it is possible to observe a decrease in particles in a layer transfer process such as described in FIGS. 1a to 1f. Specifically, there is no formation of peeling blisters during the heat treatment in the portion without bonding 29 shown in FIG. 1d, which may create particles during the heat treatment of the detachment step.

Example 3

[0067] According to another example of the present disclosure, such as described with reference to FIGS. 3a and 3b, a second implantation step is carried out on the donor substrate after the first implantation and the corresponding implantation profile is shown by the dashed-dotted line 85 in FIG. 3c.

[0068] The first implantation step is carried out using the mask 43 to mask a zone of the edge 5 of the substrate that corresponds to example 2, the second implantation step is carried out through the entire surface 3 of the donor substrate with an implantation dose c3 of hydrogen ions that is lower than that in the first implantation step. For example, for an implantation of hydrogen ions, the implantation dose c3 is lower than 1e16 at/cm.sup.2, typically between 0.5e16 at/cm.sup.2 and 1e16 at/cm.sup.2. In this example, there are implanted ions throughout the entire predetermined separation zone 19, up to the edge of the substrate.

[0069] Given that the second implantation has been carried out at a low dose in the zone of the edge 5 of the donor substrate 1 that corresponds to the chamfered zone 7 of the substrate, it also decreases the risk of forming peeling blisters during the thermal detachment treatment in a layer transfer process such as shown in FIGS. 1a to 1f.

[0070] A certain number of embodiments of the present disclosure have been described. However, it will be appreciated that various modifications and improvements may be made without departing from the scope of the present disclosure.