Method, Apparatus, and System for Producing Silicon-Containing Product by Utilizing Silicon Mud Byproduct of Cutting Silicon Material with Diamond Wire

Abstract

The present application provides a method, a equipment and a system for producing a silicon-containing products by using a silicon sludge which is produced by a diamond wire cutting silicon material. The method of the present application mainly utilizes a high oxide layer on the surface of a silicon waste particle produced during diamond wire cutting. The characteristics are such that the surface oxide disproportionates with adjacent internal elemental silicon to form silicon monoxide to be removed in a vapor to achieve a physical chemical reaction with a metal, a halogen gas, a hydrogen halide gas or hydrogen to form a high value-added silicon-containing products. The process realizes the large-scale, high-efficiency, energy-saving, continuous and low-cost complete recycling of diamond-wire cutting silicon waste.

Claims

1. A method for recycling solid silicon waste separated by silicon diamond wire cutting slag, the method comprising: a. Solid-liquid separation of the diamond wire cutting waste liquid, and removing the volatile component to prepare a dry, forming powder, granule or block solid silicon waste; b. Reacting the solid silicon sludge in accordance with the foregoing method of the present invention to produce a silicon-containing product having added value.

2. A method for recycling silicon waste produced by diamond wire cutting of silicon, characterized in that, after the liquid is separated and dried, disproportionation reaction between particle surface silicon dioxide e and the elemental silicon inside, allows further chemical reactions and physical reactions to form elemental silicon, silicon alloys and silanes, while producing silicon monoxide.

3. The method according to claim 1 or 2, characterized in that the drying is carried out at 110-230° C.; preferably, the equipment used for drying comprises air flow drying, spray drying, fluidized bed drying, one or a combination of rotary flash drying, infrared drying, microwave drying, freeze drying, impingement drying, countercurrent drying, superheat drying, pulsating combustion drying, and heat pump drying.

4. The method according to any one of claims 1 to 3, characterized in that the silicon-containing product is elemental silicon, high-purity silicon, silicon alloy, silicon oxide, and halogen silane and silicone monomer.

5. The method according to any one of claims 1 to 4, wherein the disproportionation reaction is carried out at a high temperature and in a vacuum or an inert gas, the reaction temperature is 1200-1800° C., and the reaction pressure is 0.001-100 MPa. Preferably, the reaction of the other elemental silicon, the silicon alloy and the halosilane is carried out simultaneously or afterwards.

6. The method according to any one of claims 1 to 5, wherein the physical reaction is to melt or concentrate elemental silicon of silicon powder particles during or after the removal of the surface oxide layer or to form an alloy with other metals; The physical reaction is carried out at a high temperature; preferably, the reaction temperature is 500 to 1800° C., and the reaction pressure is 0.001 to 100 MPa.

7. The method according to any one of claims 1 to 6, wherein the chemical reaction further comprises a carbonylation reaction using carbon monoxide and a transition metal in a silicon sludge to carry out a carbonylation reaction to remove metal impurities, the carbonylation reaction. The reaction is carried out under high temperature and high pressure; preferably, the reaction temperature is 50 to 240° C. and the reaction pressure is 0.01 to 100 MPa.

8. The method according to any one of claims 1 to 7, wherein the chemical reaction further comprises: removing of the silicon oxide surface layer and gasifying the elemental silicon powder particles by halogen or hydrogen halide to form a halogensilanes and a silicone monomer; the halogen silane is SiHxL4-x, whereinL=F, Cl, Br, and I; X=0, 1, 2, 3, 4; the gasification reaction is a combination of high temperature and high pressure and a catalyst Preferably, the reaction temperature is 200-1400° C., and the reaction pressure is 0.01-100 MPa. Preferably, the elemental silicon is subjected to a disproportionation reaction from a silicon sludge, preferably after undergoing a carbonylation reaction, and a more preferably the process is preferably continuous production.

9. The method according to any one of claims 1-8, wherein the process heating involved includes resistance heating, induction heating, microwave heating, direct electrode arc, electron beam, plasma heating, and reaction heating. And one of the combustion heating methods or a combination thereof.

10. A method for recycling silicon waste produced by diamond wire cutting of silicon, characterized in that silicon dioxide on the surface of the silicon waste particle is disproportionated with elemental silicon inside to form silicon monoxide discharged.

11. Apparatus for carrying out the method of recycling solid silicon slag separated by a silicon cutting waste according to any one of claims 1 to 10, the apparatus comprising: a reactor for carrying out a gasification reaction; the reactor is provided with a temperature control equipment; preferably, the reactor is a fluidized bed, a dilute phase flow bed, a spouted bed, a fixed bed or a moving bed; feeding a halogen gas, a hydrogen halide gas or hydrogen into the intake system of the reactor; the gasification reaction produces a gas-derived reactor and condenses the collected product collection system.

12. A system for implementing a method of recycling diamond wire silicon-cut silicon waste according to any one of claims 1 to 10, the system comprising: drying system; reactor feed system; heating system; reactor system; silicon oxide collection system; elemental silicon or silicon alloy collection system; for a reactor for carrying out a gasification reaction with a halogen, the reactor is provided with a temperature control equipment, preferably the reactor is a fluidized bed, a dilute phase gas flow bed, a spouted bed, a fixed bed or a moving bed; a hydrogen halide gas or hydrogen is fed into a reactor that is used to carry out the gasification reaction; the reactor is provided with a temperature control equipment; preferably, the reactor is a fluidized bed, a dilute phase flow bed, a spouted bed, a fixed bed or a moving bed; a halogen gas, a hydrogen halide gas, or a hydrogen gas is supplied to the intake system of the reactor; a gasification reaction produces a gas-derived reactor and condenses the collected product collection system.

13. A method of recycling silicon cutting waste, the method comprising: Step 1: solid-liquid separation of the silicon cutting waste to obtain a dry solid silicon residue; Step 2: recycling the solid silicon residue according to the method of any one of claims 1 to 8; Preferably, wherein the specific operation of step one is: In the continuously operating separation equipment, the cutting waste is subjected to solid-liquid separation to obtain two parts of the wet silicon powder precipitate and the liquid; The wet silicon powder precipitate is transferred into a cleaning container, and a pre-formed acid washing liquid is added for pickling to remove the silicon oxide layer formed by cutting the high temperature; the pickling time is 1 to 24 hours, and the acid after washing is used. The powder is rinsed to neutral pH with pure water, and the rinsed silicon powder becomes semi-dry silicon powder after precipitation operation, centrifugal separation or pressure filtration operation; The semi-dry silicon powder is dried by a vacuum drying equipment to obtain a dried solid silicon residue.

14. A method of producing silicon monoxide, characterized in that a silicon precursor, an incompletely oxidized silicon and silicon dioxide are further oxidized, reduced or added with silica to achieve a stoichiometric precursor of silicon monoxide. Then, silicon monoxide is formed by sublimation at a high temperature.

15. A method of producing silicon monoxide, characterized by: a) using a single precursor that has the elemental silicon and silicon dioxide necessary to produce silicon oxide in different parts of a single particle, more specifically silicon, incompletely oxidized silicon, The silicon oxide is further oxidized and reduced to form a single raw material of a molar ratio of elemental silicon to silicon dioxide which is close to one to one, and then silicon oxide and adjacent elemental silicon are reacted to form silicon monoxide SiOx sublimation by high temperature disproportionation reaction, and is collected; b) direct solid state reaction to obtain silicon monoxide solid; c) one of the applications of oxidized silicon dioxide as the precursor of the lithium ion battery anode material, which can be directly added to the negative electrode of the lithium ion battery in the form of a vapor phase.

16. A method for producing silicon monoxide, which comprises: adjusting elemental silicon and silica molar ratio to be close to 1:1 by oxidation or reduction under high temperature and high pressure using elemental silicon and silicon dioxide as a precursor, using the precursor to form silicon monoxide; preferably, the conditions for generating silicon monoxide include: then sublimating silicon oxide with adjacent elemental silicon by high temperature disproportionation reaction and collecting; preferably, the conditions for generating silicon oxide include: reacting the precursor with high temperature and high pressure in a confined space to form a silicon monoxide solid; preferably, the silicon oxide and the adjacent elemental silicon are formed into a silicon monoxide vapor by a high temperature disproportionation reaction, the silicon monoxide vapor is contacted with a battery anode material at a low temperature to load silicon monoxide on the pores and/or surface of the battery anode material.

17. The method of any of claims 14-16, wherein the silicon monoxide component is SiOx wherein X=0.5-1.5.

18. The method according to any one of claims 14 to 17, wherein the silicon monoxide precursor is synthesized at a reaction temperature of 500 to 2000° C. and a reaction pressure of 0.01 to 100 MPa; and the reaction atmosphere is oxidized or reduced. The conditions for synthesizing the SiOx reaction from the precursor are: The reaction temperature is 500-2000° C., and the reaction pressure is 0.001-100 MPa, wherein (a) a reaction pressure of 0.001-0.1 MPa under vacuum; (001) The reaction pressure in the inert gas is 0.001-1 MPa, (c) High-pressure silicon dioxide and elemental silicon form a silicon monoxide solid at a reaction pressure of 1-100 MPa.

19. The method according to any one of claims 14 to 18, wherein the high temperature sublimation or disproportionation reaction forms silicon monoxide and the process involved in the gasification and melting reaction is heated by resistance heating, induction heating, microwave heating, direct electrode arc, electron beam, plasma heating, reaction heating, at least one of the and combustion heating methods is achieved.

20. The method according to any one of claims 14 to 19, wherein the deposition of silicon monoxide is carried out in a collection reactor, which is a fluidized bed, a dilute phase flow bed, and a spray spouted bed, a fixed bed or a moving bed or a combination thereof. The preferred silicon monoxide vapor is condensed and deposited on the surface of the rod, plate or particle, and even penetrates into the interior of the lithium ion negative electrode material particle, preferably the dried silicon solid powder is the dried diamond wire cutting silicon waste slurry, the produced silicon monoxide vapor is condensed into particulate SiOx or, more preferably, the vapor silicon monoxide that is directly incorporated into the negative electrode material of the lithium ion battery to form a silicon-containing high capacity negative electrode material.

21. Apparatus for carrying out the method of preparing silicon monoxide according to any one of claims 14 to 20, the apparatus comprising: a silicon monoxide precursor preparation unit, preferably, the reactor is a fluidized bed, a dilute phase flow bed, a spouted bed, a fixed bed or a moving bed; a reactor for performing a disproportionation reaction to form silicon monoxide: the reactor is provided with a temperature control unit to heat the crucible; the disproportionation reaction produces a silicon monoxide vapor exiting reactor and condensing in the product collection system; the collection system is one or a combination of plate, rod, and particle beds in a vacuum.

22. Apparatus for carrying out the method of preparing silicon monoxide according to any one of claims 14 to 21, the apparatus comprising: a silicon oxide precursor preparation unit; a reactor for performing a disproportionation reaction to form silicon oxide: the reactor is provided with a temperature control equipment to heat the crucible; disproportionation reaction produces a silicon oxide gas derivation reactor and condenses the collected product collection system; the collection system is one of a plate, a rod, and a bed of particles in a vacuum or a combination thereof.

23. Apparatus according to claim 22 wherein the plate-like, rod-like system in the vacuum collecting the silicon monoxide has a hollow structure and is passed through a cooling medium.

24. Apparatus according to claim 22 or claim 23 wherein said bed of particles in a vacuum of collecting silicon oxide is cooled during transport to the top.

25. A method for dry recovery of metal-containing solid waste, characterized in that the metal in the solid waste material is removed by carbonylation with carbon monoxide to form a metal carbonyl gas, and the metal carbonylation is converted back to transition metal to achieve effective use.

26. The method of claim 25 wherein the transition metal impurity contaminant is reacted with carbon monoxide at a high temperature and pressure in combination with a catalyst; preferably, at a high temperature and pressure; preferably, the reaction temperature is 50-240° C. reaction pressure 0.01-100 MPa.

Description

DRAWINGS

[0150] FIG. 1 shows the morphological structure of the dried silicon waste in the present application. FIG. 1a is a schematic view of the composition of the silicon waste, and FIG. 1b and FIG. 1c are scanning electron micrographs (FIG. 1b) and X-ray diffraction patterns (FIG. 1) before the reaction of the dried silicon waste in Examples 1-4.

[0151] FIG. 2a, b, and c are process flow diagrams of specific embodiments of the present application.

[0152] FIG. 3 is a schematic view showing the structure of an equipment for recovering elemental silicon (melt to bulk) and collecting silicon monoxide by reaction the surface oxide layer of diamond wire cut solid silicon waste particles with silicon in a specific embodiment of the present application.

[0153] FIG. 4 is a schematic structural view of an apparatus for realizing the method for recovering elemental silicon (powder) and collecting silicon monoxide by reacting the surface oxide layer of the solid silicon waste particles according to an embodiment of the present application.

[0154] FIG. 5 is a schematic diagram of a carbonylation process for removing the transition metal in diamond wire cutting silicon sludge according to a specific embodiment of the present application.

[0155] FIG. 6 is a schematic structural view of a distributor-less gas-solid deposition apparatus for realizing the generated silicon monoxide generated by bulk collection according to an embodiment of the present application.

[0156] FIG. 7 is a schematic structural view of a distributor-less gas-solid deposition apparatus for realizing the continuous collection of the generated silicon monoxide in the form of particles according to an embodiment of the present application.

[0157] FIG. 8 is a schematic structural view of an apparatus for realizing the disproportionation reaction of diamond wire cutting silicon waste for the continuous production of the chlorosilanes according to a specific embodiment of the present application.

EXAMPLES

[0158] The technical solution of the present application will be further described below with reference to the accompanying drawings and specific embodiments, which have the advantages of fewer operation steps, shorter process, cleaner separation, and favorable by-product. These examples are not intended to limit the application.

[0159] The method of the present application mainly utilizes the silicon waste obtained by solid-liquid separation and drying of diamond wire-cut silicon slurry. Among them, the operation of solid-liquid separation of the waste slurry of the diamond wire cutting can be carried out according to any feasible prior art. The resulting silicon sludge is dried to produce elemental silicon, silicon monoxide, silicon alloy, and chlorosilanes.

Example 1: Preparation and Determination of Silicon Content of Silicon Raw Materials

[0160] The as received silicon waste material is grayish black, which mainly contains silicon powder and contains 10-30% liquid. Five 5 kg of the silicon waste material was placed in a quartz crucible and placed in an oven and dried at 110° C. for 24 hours until no volatile odorous gas overflowed to obtain a large piece of silicon waste, and then the bulk silicon waste was pulverized and repeatedly baked to 230° C. until The silicon waste was 100 mesh or less without weight loss, and finally 3943 g of dry silicon waste was obtained. All the silicon sludge prepared by this method was used as a raw material in all experiments thereafter.

[0161] FIG. 1b and FIG. 1c are scanning electron micrographs (FIG. 1b) and X-ray diffraction patterns (FIG. 1c) of the dried silicon waste in Examples 1-4 before the reaction. It can be seen that there is no other crystalline material other than silicon, but the silicon oxide on the surface of the silicon particles is amorphous and has no diffraction peaks.

[0162] Firstly, the content of silicon and silicon oxide is quantitatively analyzed by thermogravimetry. The main idea is to completely oxidize the silicon in the sample to silicon dioxide under high temperature in air, and calculate the silicon content from increased mass. Based on the above analysis, the silicon and silica mixtures were analyzed by thermogravimetric method and the results were: 85% silicon and silica (15%) on its surface constituted more than 99% of the total mass.

[0163] The specific operation is as follows: 5 g of dried silicon waste is spread flat in a 150 mm×150 mm quartz tray, and heated in a muffle furnace at 1100° C. for more than 12 hours until all the silicon powder is converted into white silica (when the reaction is not complete, there is a yellowish component), and the heated white silica powder is weighed and compared with the raw material to obtain the silicon content. The following experiment gives a dynamic process in the oxidation reaction, which has a guiding effect on the actual operating temperature and time.

[0164] The experimental instrument was a DTG-60H thermogravimetric-differential thermal analyzer from Shimadzu Corporation of Japan. The experimental atmosphere was air, the flow rate was 50 mL/min, and the experimental crucible was 50 uL of open alumina crucible, and 5.0 mg of dried silicon powder was built in. Firstly, the experimental temperature range is determined by temperature scanning. The temperature program is: 10° C./min heating rate is heated from room temperature to 1400° C. It is found that the sample begins to increase weight above 500° C. This process corresponds to the oxidation of silicon elemental into silicon dioxide.

[0165] During the process the sample had a weight gain of 80.7% in the range of 520-1400° C. In order to completely oxidize the silicon in the sample to silica, it should be isothermal at 1000° C. or higher. For this purpose, an isothermal thermogravimetric experiment was performed at 1050° C. for isothermal 999 minutes. At 1050° C., the sample was weighted to 100% during the experiment, which corresponds to the process of oxidation of silicon elemental to silica. The sample before the experiment was dark brown, and the sample after the experiment turned white, indicating that all of the silicon became silicon dioxide

[0166] Theoretically, for the Si+O2.fwdarw.SiO2 process, the weight gain should be 32/28*100%=114.3%. In this experiment, the weight gain is 100%, and the content of silicon corresponding to the sample should be: 100/114.3*100%=87.5%. Based on the above analysis, a quantitative analysis of a mixture of silicon and silicon oxide can be performed using a thermogravimetric method.

Example 2

[0167] Take 2000 g of the dried silicon waste material obtained in Example 1, place 2000 ml of graphite crucible, put it into a vacuum induction melting furnace (Shanghai Chenhua), first evacuate to a vacuum of 10-3 torr or less, and then flush it into high-purity argon gas and heat it up to 1500° C. During the heating process, silicon monoxide is formed and volatilized. After the silicon is melted (observed through the transparent window), it is cooled to room temperature, and 1400 g of crystal silicon (including the part that cannot be separated inside the crucible) was obtained. It can't be taken out in the crucible, and the weight of the crucible is increased by 30 grams. Its appearance is similar to that of polysilicon. The composition analysis is shown in Table 1. In addition, this experiment did not dock specifically to silicon monoxide collection equipment, and at the same time, some of the silicon oxide was not completely reacted. Only 5 grams of the sample was obtained from the inner wall of the vacuum melting furnace top cover. The silicon oxide content is shown in Table 2.

Example 3

[0168] As shown in FIG. 3, a 500 KW industrial melting furnace is equipped with a built-in graphite crucible of 200 liters. The top has a graphite cap. The 12-foot quartz tube is connected to a two-meter-diameter stainless steel drum with a diameter of 120 cm and then connected to a Roots blower to ensure that the stainless steel barrel has a continuous negative pressure (0.7-0.9 atm) and is externally cooled by tap water.

[0169] First, 25 kg of dry silicon powder is add to the graphite crucible (since the density of the silicon powder is lower, depending on the particle size distribution of the particles, generally 0.6-1.2 g/cc, which is much lower than the density of elemental silicon of 2.3 and the density of the melted silicon is greater than elemental silicon, up to 2.56). The induction heating element 2 equipment was started to heat up to 1500-1600° C. in 2 hours. When there is no silicon monoxide to overflow, heating was stopped, and then add 125 kg of dry silicon powder to the crucible in 5 times. Finally, approximately 45-50 liters of silicon melt is formed.

[0170] Keep the silicon melt in the crucible above 1500°, and inject silicon waste powder from the quartz tube through the bottom of the crucible through the feeder 303 (inner diameter 2-inch quartz tube). Since the feeding tube exchanges heat with the outside, when the lower temperature silicon powder is added, it is easy to solidify and cause difficulty in feeding. Therefore, the lower end of the feeding tube must be insulated, externally heated and fast fed to ensure continuous operation.

[0171] In the latter part of the experiment, the graphite crucible top cover was used to feed through the quartz tube to avoid the clogging problem. However, due to the shutdown, some silicon melt was oxidized to form silicon monoxide. Silicon powder was injected into the melter 304 (crucible) at a rate of 100-1000 g per minute until molten silicon was poured from the middle central pipe 306 into the collector 307 (quartz crucible) by about 10 liters, and 183 kg of silicon powder was added in a total of 7.0 hours. After cooling for 24 hours, the weight of the crucible was increased by 205 kg, and 34 kg of silicon was collected in the collector 307 (weighed after cooling), a total of 239 kg. The silicon content of the sample is shown in Table 1.

[0172] During the whole process, SiOx gas is discharged from the top through 305, and the system is blocked due to system blockage. In addition, this experiment did not dock specifically to a silicon monoxide collection equipment, but obtained 23 kg sample from the inner wall of the stainless steel barrel, and its silicon oxygen content is shown in Table 2.

Example 4: Elemental Silicon Powder

[0173] FIG. 4 shows another reactor of removing surface oxide layer of silicon waste powder, it is aimed to produce elemental silicon, and belongs to moving bed operation. The dried silicon waste powder is passed through a charging equipment 401 and 402 to heating section 403 which is open above the vacuum section and is connected to a vacuum collecting equipment 405 (the system is an inner diameter 20 mm T-type quartz tube, as in the heating furnace). Different from the previous reaction, the heating temperature is at 1375° C., lower than the melting point of silicon 1410° C. When the dry powder of silicon waste approaches and reaches the heating section, the oxide layer on the surface of the particle reacts with the internal elemental silicon to produce silicon monoxide vapor, which is taken out through the tube from the upper part of the open section to the collection chamber 405 connected to the vacuum machine (0.1 bar) until all the surface oxide layers are completely reacted, and the remaining silicon powder is elemental silicon powder is continuously pushed to the collection chamber 405.

[0174] The reaction was carried out for 2 hours, 300 g of silicon powder was added, and 220 gram of silicon powder was collected (some of the partially reacted silicon powder remaining in the reactor was not recorded), 0.21 g of silicon monoxide was collected from the top (partially not completely collected on the inner wall of the vessel).

Example 5: High Purity Silicon

[0175] As shown in FIG. 5, 500 g of silicon powder after drying, the same silicon powder as in Example 2, was placed in one end of a thick-walled stainless steel tube 505 (15 kg), and the end of the tube was welded and sealed, and placed in a heating tube 506, inside the tube. The air is drawn out and the other end is connected to a carbon monoxide cylinder 501 with a pressure gauge 503 and valves 502a and 502b. First, the carbon monoxide is flushed into the tube to 10 MPa, the valve is closed, and the reactor is heated to maintain the reactor at 110° C. The pressure in the tube decreases with the reaction of nickel and carbon monoxide (the number of moles of gas decreases), due to the continuous metal nickel and iron in the dry powder of silicon waste. A carbonylation reaction with carbon monoxide.

[0176] When the pressure drops to 1.0 MPa, the valve is opened and carbon monoxide is added to the tube to return the pressure to 10 MPa and then the valve is closed. As the reaction proceeded, the pressure inside the tube was continuously reduced to 5.0 MPa and then restarted until the pressure in the reactor did not change significantly, indicating that all transition metal carbonylation reactions were completed Subsequently, the reactor is separated from the cylinder, moved to the suction cabinet, and the gas in the reactor is released to obtain a dry powder for removing metal impurities. Since the content of the metal impurities is small, the reactor is heavier, and the weight loss of the sample after carbonylation cannot be accurately determined. 493 g of treated silicon powder.

[0177] Using the same vacuum melting furnace of Example 2, 200 g of the dried and removed transition metal silicon sludge was weighed use a graphite crucible and was taken into a vacuum melting furnace, and the vacuum was first evacuated to 10.sup.3 torr or less, then pure argon gas was introduced. At 1500° C., silicon monoxide is formed and volatilized, after all silicon is melt observed through the transparent window, the furnace was cooled down naturally, 150 g crystalline silicon (crucible weight gain) with appearance similar to polysilicon was obtained, this embodiment is used for test the effect of carbonylation for metallic impurities removal.

[0178] Table 1 compares the metal content (mg/kg) of elemental silicon and metal-removed silicon powder and high-purity silicon, using an inductively coupled plasma emission spectrometer, model: ICO2060. The comparison samples were from the National Institute of Nonferrous Metals Research. It can be seen that the removal effect of metallic nickel Ni and iron Fe is very obvious.

TABLE-US-00001 TABLE 1 Comparison table of metal content in silicon and high-purity silicon after elemental silicon and metal removal (mg/kg) Example 2 Example 5 (silicon (elemental powder obtained after Example 5 (high Metal element silicon) metal removal) purity silicon) Fe 799.42 2 3 Mn ND ND ND Ni 82.505 3 2 Ca 26   0.5 1 Co ND ND ND

[0179] Among them, Example 2 is the elemental silicon obtained after the disproportionation reaction, without metal removed. The disproportionation reaction means that silicon reacts with silicon dioxide.

[0180] Wherein Example 5 (silicon powder obtained after removing metal) means that the metal is removed by a carbonylation reaction, but no disproportionation reaction occurs, and the disproportionation reaction means that silicon and silicon dioxide react.

[0181] Disproportionation reaction refers to reacting silicon and silicon dioxide.

[0182] Where mg/kg represents the amount of metal per kilogram of silicon waste obtained from a commercial silicon cutting plant.

Example 6

[0183] As shown in FIG. 6, using the same sample A as in Example 1, silicon oxide was coexisting with silicon, and in the case where the silicon content was known to be 87%, the microwave was heated in the air every time to make the sample 10 kg to the hot 800-1000° C., weight increase of 30-50% (when elemental silicon and silica molars are the same, silicon powder weight gains 45.7%), the degree of oxidation in the experiment is closely related to the accumulation of silicon powder, the particles should be fully in contact with oxygen in the air, which In the process of industrialization, it can be further optimized by standard chemical operation.

[0184] The obtained powder is brownish black, and the powder is pressed into a block (preventing the powder from being vacuumed out in the reaction), and is broken into a silicon oxide precursor having a particle size of 3-10 mm. The granules, silicon monoxide precursor particles or powder are added to the reactor by a double lock hopper 601 and fall into the quartz crucible 603, which is heated by the graphite heating element 602 to 1350-1400° C.

[0185] The sublimated silicon monoxide 607 overflows from the crucible drifting to the collection chamber 604 (the collection chamber 004 maintains a negative pressure) and depositing on the surface of the tubular substrate 606, the tubular 006 substrate is two pairs of inverted U-shaped stainless steel tubes of three-eighths of an inch, 40 cm high, 20 cm apart, hollow internal communication The tap water 608 is cooled, and the outlet water temperature is kept at 30° C. After waiting for the deposition of the silicon oxide on the substrate, the deposition of the outer diameter of the tube reaches 5 cm after 34 hours to terminate the deposition, the product is removed, and the weight is found to be 5.7. Kg SiO2. The yield is less than 30% after comparative feeding. This is because the entire deposition surface area is too small, especially when starting to deposit, large-scale production, multi-rod structure can be adopted to improve the entire deposition surface area. Accept the purpose of efficiency.

Example 7

[0186] As shown in FIG. 7a, the same sample as in Example 6 was used to prepare silicon monoxide precursor particles having a particle size of 3 to 10 mm, which were fed into the reactor by a double lock hopper 701, and dropped into crucible 703, which was heated by graphite heating element 702 to 1400° C., and the sublimated silicon monoxide 707 is floated by a helium overflow to the collection chamber and deposited on the surface of the granular silicon monoxide substrate 708, 705 is a vacuum outlet, and a shutter-type block is provided on the left side of the vacuum outlet 705. (see FIG. 7b).706 is a particle circulator, which is transported from the bottom tank to the top of the apparatus by an in-line vacuum using 0.3 MPa argon Ar as the drive source.

[0187] In FIG. 7b, reactor chamber 711 has a silicon monoxide inlet 710 and an outlet 713, and a ladder distributor 712 is mounted inside the reactor chamber 711. The bottom of the reactor chamber 711 is connected to the vacuum loader 716 by a pipe; the top of the reactor chamber 711 is connected to the particle disperser 714, and the pipe between the step distributor 712 and the vacuum feeder 716 is provided with particle screening equipment 715.

[0188] The particles are evenly distributed by the particle disperser 714 on the step distributor 712, and then the particles move to the bottom uninterrupted cycle, and in the reactor cavity 711, the surface thereof is kept in full contact with the silicon monoxide vapor and the particle size thereof is continuously grown. Under the same conditions as in Example 6, the particles of the silicon monoxide were increased in weight to 18.3 kg, and the efficiency was remarkably improved. There is also a screening equipment 704 between the particle circulator 706 and the top to allow large particles to be discharged, and the small particles are transported to the top to continue to circulate within the reactor and grow. When there are too few small particles in the system, it can be added to ensure that the system operates in a steady state.

[0189] The composition analysis of the silicon oxide produced in Example 2-6 was carried out by the method of Example 1. Table 2 lists the oxygen to silicon ratio of the silicon monoxide SiOx prepared in each of the examples, and the method employed is the weighting method described in Example 1 of the present application. It can be seen that the silicon to oxygen ratio is very close, but when the temperature is high, the proportion of silicon is relatively high, which may be the reason for the higher vapor pressure of elemental silicon.

TABLE-US-00002 TABLE 2 Silicon to oxygen ratio of silicon oxide in the examples The value of X in SiOx EXAMPLES Condition Si Example 2 Vacuum Melting 0.99 Example 3 Continuous Melting 0.97 Example 4 Elemental silicon powder 0.98 Example 5 High Purity Silicon 0.98 Melting Example 6, 7 Separate production of 1.02 silicon oxide

Example 8

[0190] 3.5 kg (calculated as elemental silicon) of the same dried silicon powder as in Example 1 was mixed with aluminum powder 10 mesh 30 kg at 10% and 90%, and added to the melter. FIG. 3 (aluminum powder cover on silicon powder), at 700° C. Under the condition of, a silicon-aluminum alloy was produced, the silicon content was 9.8%, and the silicon oxide was overflowed, and was not collected.

Example 9

[0191] The silicon powder with and without the oxide layer was compared, and the same sample as in Example 1, except that (a) was dried only, (b) was ground in a protective atmosphere (argon) for 100 minutes, and (c) was obtained from Example 4. A fixed bed reactor (see FIG. 8) is used: a quartz tube reactor with an inner diameter of 50 mm, with a tapered bottom and a central main reaction zone (heating section) of 300 mm, with a block of quartz (3-15 mm) filling cone form a gas distributor, add 30 grams of dry silicon waste powder (30-100 mesh) in the middle main reaction zone, and the upper part of the reactor is filled with quartz wool (laboratory small test uses quartz wool at the product gas outlet), to prevent the powder from being carried out of the reactor when the gas flow is unstable. The reactor product gas outlet is connected to a water condensation tube, a liquid collection bottle is connected downstream of the condensation tube, and the tail gas passage is passed through the alkali washing tank.

[0192] First, after heating in nitrogen at 250-300° C. (set temperature 270° C.), switch to gas HCl for reaction, control HCl gas flow rate to 100 ml/min, hold at 300-350° C. for 2 hours, condense collection Reactant. For the sample (a), no reaction product was collected, indicating that the silicon waste with the oxide layer did not participate in the reaction; for the sample (b), 120 and 130 g of the transparent liquid were respectively received, and the chemical analysis was that the main component was 70% SiHCl3. The remaining 29.95% is SiCl4, and other impurities are less than 0.05%. In the reactor (c), the sample silicon waste basically disappeared, indicating that most of the silicon was consumed during the reaction.

Example 10

[0193] Three samples (a), (b) and (c) which were substantially identical to the conditions of the method of Example 10, except that the reaction gas was changed from HCl to 100 ml/min Cl.sub.2, and the reaction temperature was raised to 500-900° C. (setting at 700° C.), during the reaction, due to the heat of reaction, the actual temperature reached 1100° C. in the intermediate stage, and the reaction time was reduced to one hour.

[0194] Different from the implementation example 9, the sample (a) also participates in the reaction, and after the reaction temperature is raised, the surface oxide layer of the sample (a) is reacted with the internal elemental silicon to be removed, and the internal elemental silicon is exposed and participated. The reaction with chlorine. After the reaction gas after the reaction of the samples (a) and (b) was condensed, 150 g of a transparent liquid was collected, and 173 g of the sample (c) was obtained, and the chemical analysis was that the purity of the SiCl4 silicon tetrachloride was 99.5% or more.

Example 11

[0195] As in the case of Example 9, only 10% by weight of CuCl.sub.2 catalyst was added to the powder, and the gasification gas feed was 100 ml/min HC. The condensed product did not change significantly, and the reactor reaction start-up time (from heating to condensation) The time when the first drop of chlorosilane appeared in the equipment was significantly reduced, the reaction was accelerated, and the entire reaction time was only one third of that of Example 9.

[0196] The above description is only for the preferred embodiment of the present application, and is not intended to limit the present application, and various changes and modifications may be made to the present application. Any modifications, equivalent substitutions, improvements, etc. made within the spirit and principles of this application are intended to be included within the scope of the present application.

INDUSTRIAL APPLICABILITY

[0197] The present application utilizes the characteristics of a thick oxide layer (SiO.sub.2) generated during diamond wire cutting on the surface of the silicon waste particle (Si), and use it to react with inside silicon to form a silicon monoxide sublimation, and to achieve the purpose of removing the surface oxide layer, thereby through physicochemical reaction of a metal, a halogen gas, a hydrogen halide gas or hydrogen, makes it possible to further convert the silicon sludge into elemental silicon, a silicon alloy, and a halosilane, thereby producing a high value-added silicon-containing industrial product. At the same time, it has produced more valuable silicon oxides that can be used in many fields. This eliminates disadvantages in conventional method of removing the silicon oxide layer by pickling, adding a reducing agent, etc., having a high cost, environmental pollution, and waste of silicon material.