METHOD OF MANUFACTURING A PEROVSKITE-BASED PHOTOVOLTAIC DEVICE, AND CORRESPONDING PHOTOVOLTAIC DEVICE

Abstract

Method of manufacturing a photovoltaic device, comprising the steps of: providing a substrate; depositing a first electrode layer on said substrate; depositing a p-type hole transport layer on said first electrode layer; depositing a Perovskite-based absorber layer on said p-type hole transport layer; depositing an n-type electron transport layer on said Perovskite-based absorber layer; and depositing a second electrode layer on said n-type electron transport layer, wherein said second electrode layer comprises boron doped zinc oxide or tin oxide and is deposited by chemical vapour deposition at an absolute pressure of 5 mbar or less.

Claims

1-17. (canceled)

18. Method of manufacturing a photovoltaic device, comprising the steps of: providing a substrate; depositing a first electrode layer on said substrate; depositing a p-type hole transport layer on said first electrode layer; depositing a Perovskite-based absorber layer on said p-type hole transport layer; depositing an n-type electron transport layer on said Perovskite-based absorber layer; and depositing a second electrode layer on said n-type electron transport layer, wherein said second electrode layer comprises zinc oxide or tin oxide and is deposited by chemical vapour deposition at an absolute pressure of 5 mbar or less.

19. Method according to claim 18, wherein said n-type electron transport layer comprises a substance based on a Fullerene.

20. Method according to claim 18, wherein said zinc oxide or said tin oxide is doped with boron.

21. Method according to claim 18, wherein a further PIN layer stack is deposited between said substrate and said first electrode, or between said substrate and said p-type hole transport layer.

22. Method according to claim 18, wherein said substrate comprises a crystalline silicon photovoltaic cell.

23. Method according to claim 22, wherein said p-type hole transport layer is deposited directly upon an n-type zone of said crystalline silicon photovoltaic cell.

24. Method according to claim 18, wherein said zinc oxide or said tin oxide is deposited by chemical vapour deposition under the following process parameters: Temperature: 20° C. to 160° C.; Pressure: 0.1 mbar to 5 mbar absolute; For zinc oxide: diethyl zinc flow: 50 sccm to 250 sccm, with or without carrier gas; For tin oxide: tetramethyl tin flow: 50 sccm to 200 sccm, with or without carrier gas; Water vapour flow: 10 sccm to 200 sccm; Optionally, boron dopant gas flow: 10 to 100 sccm.

25. Method of manufacturing a photovoltaic device, comprising the steps of: providing a substrate; depositing a first electrode layer on said substrate; depositing a p-type hole transport layer on said first electrode layer; depositing a Perovskite-based absorber layer on said p-type hole transport layer; depositing an n-type electron transport layer on said Perovskite-based absorber layer, said n-type electron transport layer being arranged to act as a second electrode layer and/or as a buffer layer, wherein said n-type electron transport layer comprises zinc oxide or tin oxide and is deposited by chemical vapour deposition at an absolute pressure of 5 mbar or less.

26. Method according to claim 25, wherein said zinc oxide or said tin oxide is doped with boron.

27. Method according to claim 25, wherein a further PIN layer stack is deposited between said substrate and said first electrode, or between said substrate and said p-type hole transport layer.

28. Method according to claim 25, wherein said substrate comprises a crystalline silicon photovoltaic cell.

29. Method according to claim 28, wherein said p-type hole transport layer is deposited directly upon an n-type zone of said crystalline silicon photovoltaic cell.

30. Method according to claim 25, wherein said zinc oxide or said tin oxide is deposited by chemical vapour deposition under the following process parameters: Temperature: 20° C. to 160° C.; Pressure: 0.1 mbar to 5 mbar absolute; For zinc oxide: diethyl zinc flow: 50 sccm to 250 sccm, with or without carrier gas; For tin oxide: tetramethyl tin flow: 50 sccm to 200 sccm, with or without carrier gas; Water vapour flow: 10 sccm to 200 sccm; Optionally, boron dopant gas flow: 10 to 100 sccm.

31. Photovoltaic device comprising: a substrate; a first electrode layer provided on said substrate; a p-type hole transport layer provided on said first electrode layer; a Perovskite-based absorber layer provided on said p-type hole transport layer; an n-type electron transport layer provided on said Perovskite-based absorber layer; and a second electrode layer provided on said n-type electron transport layer, wherein said second electrode layer comprises zinc oxide or tin oxide doped with boron.

32. Photovoltaic device according to claim 31, wherein said n-type electron transport layer comprises a substance based on a Fullerene.

33. Photovoltaic device according to claim 31, wherein said boron is present in said zinc oxide or said tin oxide in a concentration from 0.1×10.sup.19 to 50×10.sup.19, preferably 5×10.sup.19 to 50×10.sup.19 atoms per cubic centimetre.

34. Photovoltaic device according to claim 31, comprising a further PIN layer stack situated between said substrate and said first electrode, or between said substrate and said p-type hole transport layer.

35. Photovoltaic device according to claim 31, wherein said substrate comprises a crystalline silicon photovoltaic cell.

36. Photovoltaic device according to claim 35, wherein said p-type hole transport layer is provided directly upon an n-type zone of said crystalline silicon photovoltaic cell.

37. Photovoltaic device according to claim 31, wherein said zinc oxide or said tin oxide is deposited on said perovskite layer by chemical vapour deposition under the following process parameters: Temperature: 20° to 160°; Pressure: 0.1 mbar to 5 mbar; For zinc oxide: diethyl zinc flow: 50 sccm to 250 sccm, with or without carrier gas; For tin oxide: tetramethyl tin flow: 50 sccm to 200 sccm, with or without carrier gas; Water vapour flow: 10 sccm to 200 sccm; Optionally, boron dopant gas flow: 10 to 100 sccm.

38. Photovoltaic device comprising: a substrate; a first electrode layer provided on said substrate; a p-type hole transport layer provided on said first electrode layer; a Perovskite-based absorber layer provided on said p-type hole transport layer; an n-type electron transport layer provided on said Perovskite-based absorber layer, said n-type electron transport layer being arranged to act as a second electrode layer and/or as a buffer layer, wherein said n-type electron transport layer comprises zinc oxide or tin oxide doped with boron.

39. Photovoltaic device according to claim 38, wherein said boron is present in said zinc oxide or said tin oxide in a concentration from 0.1×10.sup.19 to 50×10.sup.19, preferably 5×10.sup.19 to 50×10.sup.19 atoms per cubic centimetre.

40. Photovoltaic device according to claim 38, comprising a further PIN layer stack situated between said substrate and said first electrode, or between said substrate and said p-type hole transport layer.

41. Photovoltaic device according to claim 38, wherein said substrate comprises a crystalline silicon photovoltaic cell.

42. Photovoltaic device according to claim 41, wherein said p-type hole transport layer is provided directly upon an n-type zone of said crystalline silicon photovoltaic cell.

43. Photovoltaic device according to claim 38, wherein said zinc oxide or said tin oxide is deposited on said perovskite layer by chemical vapour deposition under the following process parameters: Temperature: 20° to 160°; Pressure: 0.1 mbar to 5 mbar; For zinc oxide: diethyl zinc flow: 50 sccm to 250 sccm, with or without carrier gas; For tin oxide: tetramethyl tin flow: 50 sccm to 200 sccm, with or without carrier gas; Water vapour flow: 10 sccm to 200 sccm; Optionally, boron dopant gas flow: 10 to 100 sccm.

Description

BRIEF DESCRIPTION OF THE DRAWINGS

[0067] Further details of the invention will appear more clearly upon reading the description below, in connection with the following figures which illustrate:

[0068] FIG. 1: a schematic representation of a first method of manufacturing a perovskite-based photovoltaic device according to the invention, serving to also illustrate the corresponding PV device in exploded form; and

[0069] FIG. 2: a schematic representation of a second method of manufacturing a perovskite-based photovoltaic device according to the invention, serving also to also illustrate the corresponding PV device in exploded form.

EMBODIMENTS OF THE INVENTION

[0070] It should be noted in the following that, unless explicitly stated that a particular layer is deposited directly on the underlying layer, it is possible that one or more intermediate layers can also be present between the layers mentioned. As a result, “on” should be construed by default as meaning “directly or indirectly on”. Furthermore, unless specifically stated, layers are not to be presumed as being 100% pure. Contaminants, other components and so on can of course also be present, provided that the layer predominantly retains the properties of the composition mentioned, such as by comprising at least 50% of the substance mentioned. Furthermore, even if not explicitly mentioned, layers can be patterned as required and as is generally known.

[0071] FIG. 1 illustrates a first method of manufacturing a photovoltaic (PV) device 1 according to the invention.

[0072] Firstly, a substrate 11 is provided. This may be of glass or substantially transparent polymer or other suitable material if the substrate 11 is to be situated on the light-incident side of the PV device 1, or metal, ceramic, polymer, a crystalline silicon PV cell (see below) or other suitable material if the substrate 11 is to be situated on the opposite side to the light-incident side.

[0073] A first electrode layer 13 is deposited on the substrate 11, which is typically of transparent conductive oxide (TCO), e.g. doped or undoped zinc oxide, tin oxide, indium tin oxide, fluorine doped tin oxide, titanium oxide, or similar. This may be deposited by any suitable process, such as physical vapour deposition (PVD) with or without plasma enhancement, sputtering, chemical vapour deposition (CVD) with or without plasma enhancement or any other suitable process.

[0074] Subsequently, a p-type hole transport layer 15 such as a nickel oxide layer, a molybdenum oxide layer, a tungsten oxide layer or any other suitable layer is deposited on the first electrode layer 13, e.g. by sputtering or any other suitable process. This p-type hole transport layer is appropriately doped if required.

[0075] Subsequently, a perovskite layer 17 is deposited on the p-type hole transport layer 15 e.g. by any suitable wet coating or evaporation process.

[0076] Once the perovskite layer 17 has formed and any solvent used has fully evaporated, an n-type electron transport layer 19 comprising a material such as a Fullerene (i.e. C60) based material is deposited thereupon, e.g. by an evaporative process. This material may be C60 itself, or a compound based thereupon such as methanofullerene, phenyl-C61-Butyric-Acid-Methyl-Ester, or other similar compound. This may be doped or undoped, and may be combined with another material such as doped or undoped zinc oxide or tin oxide. A composite material comprising a fullerene or fullerene compound is also possible. Also, other n-type layers 19 are possible, provided that their processing is compatible with the underlying perovskite layer.

[0077] Subsequently, a second electrode layer 21 is deposited on the electron transport layer 19, so as to form a PIN junction (considered starting from the substrate side). This is formed of zinc oxide (ZnO) or tin oxide (SnO.sub.x, with any desired stoichiometry between SnO and SnO.sub.2), which may be doped with boron, and is deposited by low pressure CVD (LPCVD) for the following reasons. It should be noted that boron is an n-type dopant when incorporated in zinc oxide and tin oxide, and in general if present is generally in a concentration from 0.1×10.sup.19 to 50×10.sup.19 atoms per cubic centimetre, preferably 5×10.sup.19 to 50×10.sup.19 atoms per cubic centimetre, although lower concentrations are also possible and the presence of dopant in the ZnO or SnO.sub.2 is not to be construed as essential to the invention.

[0078] In essence, the arrangement of the junction as PIN rather than NIP is the result of a careful choice due to the fact that there are very few p-type materials that can practically be deposited on large size substrates using processes that do not damage the underlying perovskite. In the prior art, for instance in the document US2016/359119, the perovskite junction is NIP, with a zinc oxide N layer deposited on the substrate before the perovskite layer is formed, so as not to damage this latter. The p-layer deposited on the perovskite is an organic p-type material, which is unsatisfactory due to serious concerns about long-term stability and large-scale processability, as mentioned above.

[0079] Another document, US2016/126401, uses a zinc oxide layer in a hybrid tandem NIP photovoltaic device, with the zinc oxide being deposited on top of a silicon bottom cell, which can withstand normal ZnO processing parameters. The perovskite is then deposited on top of this zinc oxide, for the same reasons.

[0080] Up to now, there has been significant technical prejudice against attempting to deposit zinc oxide or tin oxide on top of perovskite, due to the risks of causing damaging to the heat-sensitive perovskite. However, the inventors have ascertained that, by choosing a PIN rather than NIP construction and using LPCVD to deposit the zinc oxide or tin oxide, this prejudice can be overcome. As a result of the invention, it is thus indeed possible to use zinc oxide or tin oxide on top of perovskite, which will permit not only using a stable material rather than an organic layer, but also using a process which is scalable to produce even-thickness layers even on the largest PV panels.

[0081] To do so, LPCVD is carried out under the following process conditions, in the case of a zinc oxide layer: [0082] Temperature: 20° C. to 160° C.; [0083] Pressure: 0.1 mbar to 5 mbar absolute; [0084] Diethyl zinc flow: 50 sccm to 250 sccm, with or without argon or other carrier gas; [0085] Water vapour flow: 10 sccm to 200 sccm; [0086] Optionally, boron dopant gas flow: 10 to 100 sccm.

[0087] In the case of LPCVD tin oxide, the process conditions are as follows: [0088] Temperature: 20° C. to 160° C.; [0089] Pressure: 0.1 mbar to 5 mbar absolute; [0090] Tetramethyl tin flow: 50 sccm to 200 sccm, with or without argon or other carrier gas; [0091] Water vapour flow: 10 sccm to 200 sccm; [0092] Optionally, boron dopant gas flow: 10 to 100 sccm.

[0093] These processes may be carried out with or without plasma assistance.

[0094] Under these parameters, undoped or boron doped zinc oxide, or undoped or boron doped tin oxide (as appropriate), can be deposited on top of a perovskite layer without damaging it e.g. with excessive heat or particle bombardment. Furthermore, LPCVD is capable of deposition rates of zinc oxide or tin oxide (as appropriate) that are compatible with industrial production, unlike another low damage deposition technique such as atomic layer deposition (ALD). It is noted that, technically speaking, ALD could alternatively be used for depositing the zinc oxide or tin oxide since it is compatible with deposition on top of perovskite, but the deposition rate is too low for commercially-viable large-scale production.

[0095] Subsequently, any further required layers, encapsulants etc. can be deposited on the PV device thereby obtained.

[0096] Although not illustrated explicitly, the PV device may be patterned and may incorporate electrical connections as is generally known in the art so as to form a PV panel.

[0097] FIG. 1 also schematically illustrates an optional alternative case, namely a tandem PV device 1 in which a silicon-based cell 23 comprising an electrode 23a, a p-type silicon-based layer 23b, an intrinsic silicon-based layer 23c, and an n-type silicon-based layer 23d, is deposited on the substrate 11 before the stack of layers 13, 15, 17, 19 and 21. Naturally, other types of semiconductor other than silicon can be used (e.g. germanium, organic semiconductors and so on), but silicon is mentioned explicitly since it is the dominant technology at the present time. Furthermore, in the case in which an electrode layer between the two PIN junctions is not required, the further PIN layer stack 23 can be deposited between the substrate 11 and the p-type layer 15, in which case electrode layer 13 can be omitted and its role as “first electrode layer” in the sense of the invention is taken over by electrode layer 23a. This hybrid cell hence has a PINPIN configuration.

[0098] As a further alternative manner in which to create a tandem cell, the substrate 11 itself may be a crystalline silicon PV cell or cells, manufactured and patterned as normal, and upon which the sequence of other layers 13, 15, 17, 19 and 21 are deposited as mentioned above. In such a case, the PIN junction 23 discussed above is not deposited. This crystalline cell serving as substrate 11 comprises a PN junction comprising a p-type zone and an n-type zone, this latter facing the first electrode layer 13, if present. In such a configuration, the first electrode layer is not essential and can be omitted, with the p-type layer 15 being directly deposited on the n-type zone of the crystalline PV cell in such a case. Again, this creates a tandem hybrid PV device 1, this time in PNPIN configuration, benefitting from the higher efficiency of crystalline silicon cells.

[0099] FIG. 2 illustrates a variant of a method according to the invention. This method differs from that of FIG. 1 in that the functional roles of the n-type electron transport layer 19 and the second electrode 21 are combined in a single doped n-type zinc oxide (ZnO) or tin oxide (SnO.sub.x, as above) layer 19, which is dimensioned and doped so as to give sufficient conductivity that it acts as an electrode. Zinc oxide and tin oxide have the required electronic band alignment with a perovskite intrinsic absorber layer to act as an electron transport layer, which eliminates the need for separate n-type and electrode layers formed of different materials and deposited in separate process steps.

[0100] Alternatively, the n-type zinc oxide or tin oxide layer 19 can not only serve as n-type electron transport layer, but can also act as a buffer layer prior to deposition of further layers such as an electrode layer. In this role, the n-type zinc oxide or tin oxide layer serves as electron transport layer and also protects the perovskite from damage due to further deposition steps and/or provides better electrical extraction between the perovskite and the electrode. This increases the variety of processes and materials available for these extra layers (including the electrode layer), since the zinc oxide or tin oxide protects the underlying perovskite layer 17. In such a case, the subsequent electrode layer can comprise materials as mentioned above for the first electrode layer 13, and will resemble the structure of FIG. 1, with layer 19 comprising zinc oxide or tin oxide and layer 21 comprising a non-zinc-oxide-based electrode layer such as indium tin oxide, fluorine doped tin oxide, titanium oxide, or similar. Again, an optional tandem construction is also possible, with an extra PIN junction 23 being inserted between the substrate 11 and the perovskite-based PIN junction formed by layers 15, 17 and 19, or the substrate 11 itself being a crystalline silicon PV cell comprising a PN junction. The same considerations as discussed above regarding the use of a crystalline silicon PV cell as substrate in the context of FIG. 1 apply equally in this case.

[0101] Not represented on the figures are other known aspects of PV cell construction, such as patterning of the layers, the presence of electrical tracks, metallic electrodes joining individually patterned cells, encapsulant layers, reflector layers, front sheets, rear sheets, light scattering layers, and so on. The skilled person can apply such measures as he sees fit, and it is not required to describe them in detail. Furthermore, various known functional or non-functional intermediate layers can be incorporated as required.

[0102] Although the invention has been described in terms of specific embodiments, variations thereto are possible without departing from the scope of the invention as defined in the appended claims.