Method and Apparatus for Performing Immersion Tin Process or Copper Plating Process in the Production of a Component Carrier
20210108315 · 2021-04-15
Inventors
Cpc classification
H05K3/3457
ELECTRICITY
C25D7/00
CHEMISTRY; METALLURGY
C23C18/52
CHEMISTRY; METALLURGY
C25D17/00
CHEMISTRY; METALLURGY
H05K2203/072
ELECTRICITY
C23C18/1664
CHEMISTRY; METALLURGY
C25D5/003
CHEMISTRY; METALLURGY
C23C18/1628
CHEMISTRY; METALLURGY
C23C18/1653
CHEMISTRY; METALLURGY
C25D21/14
CHEMISTRY; METALLURGY
C23C18/54
CHEMISTRY; METALLURGY
C25D7/123
CHEMISTRY; METALLURGY
International classification
Abstract
A method of performing an immersion tin process in the production of a component carrier is provided which includes immersing at least a part of a copper surface of the component carrier in a composition containing Sn(II) in an immersion tin unit, while passing a non-oxidizing gas through the immersion tin unit, wherein at least part of the non-oxidizing gas is recycled. In addition, an apparatus for performing an immersion tin process in the production of a component carrier, a method of performing a copper plating process in the production of a component carrier and an apparatus for performing a copper plating process in the production of a component carrier are provided.
Claims
1. A method of performing an immersion tin process in the production of a component carrier, the method comprising: immersing at least a part of a copper surface of the component carrier in a composition containing Sn(II) in an immersion tin unit, while passing a non-oxidizing gas through the immersion tin unit, wherein at least part of the non-oxidizing gas is recycled.
2. The method of performing an immersion tin process in the production of a component carrier according to claim 1, wherein the composition containing Sn(II) further contains a complexing agent for copper and an acid.
3. The method of performing an immersion tin process in the production of a component carrier according to claim 2, wherein the complexing agent for copper comprises thiourea and/or wherein the acid comprises methanesulfonic acid.
4. The method of performing an immersion tin process in the production of a component carrier according to claim 1, wherein the immersing step is carried out at a temperature of from 50 to 95° C., in particular 60 to 85° C., in particular 70 to 75° C.; and/or wherein the immersing step is carried out under elevated gas pressure, in particular 1.02 to 1.2 times atmospheric pressure.
5. The method of performing an immersion tin process in the production of a component carrier according to claim 1, wherein the non-oxidizing gas comprises at least 95 vol % of nitrogen.
6. The method of performing an immersion tin process in the production of a component carrier according to claim 1, wherein at least part of the non-oxidizing gas is recycled and re-used, in particular re-introduced into the immersion tin unit.
7. The method of performing an immersion tin process in the production of a component carrier according to claim 1, further comprising: circulating at least part of the non-oxidizing gas through at least one of a fluid driving unit, a gas-gas heat exchanger, a gas-water heat exchanger, a water removing unit, and/or a H.sub.2S removing unit.
8. An apparatus for performing an immersion tin process in the production of a component carrier, the apparatus comprising: at least one non-oxidizing gas generation unit; at least one immersion tin unit; at least one fluid driving unit; at least one gas-gas heat exchanger; at least one gas-water heat exchanger; at least one water removing unit upstream and/or downstream of the gas-water heat exchanger; at least one H.sub.2S removing unit.
9. The apparatus for performing an immersion tin process in the production of a component carrier according to claim 8, wherein the apparatus is configured for circulating more than 100 m.sup.3/h, in particular more than 200 m.sup.3/h, of non-oxidizing gas; and/or wherein the at least one non-oxidizing gas generation unit and the at least one immersion tin unit are located in the same compartment.
10. A method of performing a copper plating process in the production of a component carrier, the method comprising: plating at least a part of a surface of the component carrier with copper in a copper plating unit, while passing a non-oxidizing gas through the copper plating unit, wherein at least part of the non-oxidizing gas is recycled.
11. The method of performing an immersion tin process in the production of a component carrier according to claim 10, wherein the plating step is carried out under elevated gas pressure, in particular 1.02 to 1.2 times atmospheric pressure; and/or wherein the non-oxidizing gas comprises at least 95 vol % of nitrogen.
12. The method of performing an immersion tin process in the production of a component carrier according to claim 10, wherein at least part of the non-oxidizing gas is recycled and re-used, in particular re-introduced into the copper plating unit.
13. An apparatus for performing a copper plating process in the production of a component carrier, the apparatus comprising: at least one non-oxidizing gas generation unit; at least one copper plating unit; and at least one fluid driving unit.
14. The apparatus for performing a copper plating process in the production of a component carrier according to claim 13, further comprising at least one of: at least one gas-water heat exchanger; at least one water removing unit; at least one gas filter unit; and at least one cooling water supply unit.
15. The apparatus for performing a copper plating process in the production of a component carrier according to claim 13, wherein the at least one non-oxidizing gas generation unit and the at least one copper plating unit are located in the same compartment.
Description
BRIEF DESCRIPTION OF THE DRAWINGS
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DETAILED DESCRIPTION OF THE ILLUSTRATED EMBODIMENTS
[0094] The illustrations in the drawings are schematically presented. In different drawings, similar or identical elements are provided with the same reference signs.
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[0097] Implementation of the invention is not limited to the preferred embodiments shown in the figures and described above. Instead, a multiplicity of variants is possible which variants use the solutions shown and the principle according to the invention even in the case of fundamentally different embodiments.