Luminescent particles comprising encapsulated nanoparticles and uses thereof

Abstract

Disclosed is a luminescent particle including a first material, wherein the luminescent particle includes at least one particle including a second material and at least one nanoparticle dispersed in the second material; wherein the first material and the second material have a bandgap superior or equal to 3 eV; and wherein the luminescent particle is a colloidal particle. Also disclosed is a light emitting material, a support and an optoelectronic device.

Claims

1. A luminescent particle (1) comprising a first material (11), wherein the luminescent particle (1) comprises a plurality of particles (2) comprising a second material (21) and at least one nanoparticle (3) dispersed in said second material (21); wherein the first material (11) and the second material (21) have a bandgap superior or equal to 3 eV, and wherein the plurality of particles (2) is uniformly dispersed in the first material (11).

2. The luminescent particle (1) according to claim 1, wherein the first material (11) and the second material (21) are selected from the group consisting of silicon oxide, aluminium oxide, titanium oxide, iron oxide, calcium oxide, magnesium oxide, zinc oxide, tin oxide, beryllium oxide, zirconium oxide, niobium oxide, cerium oxide, iridium oxide, scandium oxide, sodium oxide, barium oxide, potassium oxide, tellurium oxide, manganese oxide, boron oxide, germanium oxide, osmium oxide, rhenium oxide, arsenic oxide, tantalum oxide, lithium oxide, strontium oxide, yttrium oxide, hafnium oxide, molybdenum oxide, technetium oxide, rhodium oxide, cobalt oxide, gallium oxide, indium oxide, antimony oxide, polonium oxide, selenium oxide, cesium oxide, lanthanum oxide, praseodymium oxide, neodymium oxide, samarium oxide, europium oxide, terbium oxide, dysprosium oxide, erbium oxide, holmium oxide, thulium oxide, ytterbium oxide, lutetium oxide, gadolinium oxide, silicon carbide SiC, aluminium nitride AlN, gallium nitride GaN, boron nitride BN, mixed oxides thereof, and mixtures thereof.

3. The luminescent particle (1) according to claim 1, wherein the first material (11) limits or prevents the diffusion of outer molecular species or fluids (liquid or gas) into said first material (11).

4. The luminescent particle (1) according to claim 1, wherein the first material (11) has a density ranging from 1 to 10.

5. The luminescent particle (1) according to claim 1, wherein the first material (11) has a density superior or equal to the density of the second material (21).

6. The luminescent particle (1) according to claim 1, wherein the first material (11) has a thermal conductivity at standard conditions of at least 0.1 W/(m.Math.K).

7. The luminescent particle (1) according to claim 1, wherein the at least one nanoparticle (3) is a luminescent nanoparticle.

8. The luminescent particle (1) according to claim 1, wherein the at least one nanoparticle (3) is a semiconductor nanocrystal.

9. The luminescent particle (1) according to claim 1, wherein the at least one nanoparticle (3) is semiconductor nanocrystal comprising a core comprising a material of formula MxNyEzAw, wherein: M is selected from the group consisting of Zn, Cd, Hg, Cu, Ag, Au, Ni, Pd, Pt, Co, Fe, Ru, Os, Mn, Tc, Re, Cr, Mo, W, V, Nd, Ta, Ti, Zr, Hf, Be, Mg, Ca, Sr, Ba, Al, Ga, In, Tl, Si, Ge, Sn, Pb, As, Sb, Bi, Sc, Y, La, Ce, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, Cs and mixtures thereof; N is selected from the group consisting of Zn, Cd, Hg, Cu, Ag, Au, Ni, Pd, Pt, Co, Fe, Ru, Os, Mn, Tc, Re, Cr, Mo, W, V, Nd, Ta, Ti, Zr, Hf, Be, Mg, Ca, Sr, Ba, Al, Ga, In, Tl, Si, Ge, Sn, Pb, As, Sb, Bi, Sc, Y, La, Ce, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, Cs and mixtures thereof; E is selected from the group consisting of O, S, Se, Te, C, N, P, As, Sb, F, Cl, Br, I, thereof; A is selected from the group consisting of O, S, Se, Te, C, N, P, As, Sb, F, Cl, Br, I, and mixtures thereof; and x, y, z and w are independently a decimal number from 0 to 5; x, y, z and w are not simultaneously equal to 0; x and y are not simultaneously equal to 0; z and w may not be simultaneously equal to 0.

10. The luminescent particle (1) according to claim 1, wherein the at least one nanoparticle (3) is a semiconductor nanocrystal comprising at least one shell comprising a material of formula MxNyEzAw, wherein: M is selected from the group consisting of Zn, Cd, Hg, Cu, Ag, Au, Ni, Pd, Pt, Co, Fe, Ru, Os, Mn, Tc, Re, Cr, Mo, W, V, Nd, Ta, Ti, Zr, Hf, Be, Mg, Ca, Sr, Ba, Al, Ga, In, Tl, Si, Ge, Sn, Pb, As, Sb, Bi, Sc, Y, La, Ce, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, Cs and mixtures thereof; N is selected from the group consisting of Zn, Cd, Hg, Cu, Ag, Au, Ni, Pd, Pt, Co, Fe, Ru, Os, Mn, Tc, Re, Cr, Mo, W, V, Nd, Ta, Ti, Zr, Hf, Be, Mg, Ca, Sr, Ba, Al, Ga, In, Tl, Si, Ge, Sn, Pb, As, Sb, Bi, Sc, Y, La, Ce, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, Cs and mixtures thereof; E is selected from the group consisting of O, S, Se, Te, C, N, P, As, Sb, F, Cl, Br, I, and mixtures thereof; A is selected from the group consisting of O, S, Se, Te, C, N, P, As, Sb, F, Cl, Br, I, and mixtures thereof; and x, y, z and w are independently a decimal number from 0 to 5; x, y, z and w are not simultaneously equal to 0; x and y are not simultaneously equal to 0; z and w may not be simultaneously equal to 0.

11. The luminescent particle (1) according to claim 1, wherein the at least one nanoparticle (3) is a semiconductor nanocrystal comprising at least one crown (37) comprising a material of formula M.sub.xN.sub.yE.sub.zA.sub.w, wherein: M is selected from the group consisting of Zn, Cd, Hg, Cu, Ag, Au, Ni, Pd, Pt, Co, Fe, Ru, Os, Mn, Tc, Re, Cr, Mo, W, V, Nd, Ta, Ti, Zr, Hf, Be, Mg, Ca, Sr, Ba, Al, Ga, In, Tl, Si, Ge, Sn, Pb, As, Sb, Bi, Sc, Y, La, Ce, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, Cs and mixtures thereof; N is selected from the group consisting of Zn, Cd, Hg, Cu, Ag, Au, Ni, Pd, Pt, Co, Fe, Ru, Os, Mn, Tc, Re, Cr, Mo, W, V, Nd, Ta, Ti, Zr, Hf, Be, Mg, Ca, Sr, Ba, Al, Ga, In, Tl, Si, Ge, Sn, Pb, As, Sb, Bi, Sc, Y, La, Ce, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, Cs and mixtures thereof; E is selected from the group consisting of O, S, Se, Te, C, N, P, As, Sb, F, Cl, Br, I, and mixtures thereof; A is selected from the group consisting of O, S, Se, Te, C, N, P, As, Sb, F, Cl, Br, I, and mixtures thereof; and x, y, z and w are independently a decimal number from 0 to 5; x, y, z and w are not simultaneously equal to 0; x and y are not simultaneously equal to 0; z and w may not be simultaneously equal to 0.

12. The luminescent particle (1) according to claim 1, wherein the at least one nanoparticle (3) is a semiconductor nanoplatelet.

13. A light emitting material comprising at least one host material and at least one luminescent particle (1) according to claim 1, wherein said at least one luminescent particle (1) is dispersed in the at least one host material.

14. The light emitting material according to claim 13, wherein the host material comprises an inorganic material, a polymer, or a silicone based polymer, a resin or a mixture thereof.

15. The light emitting material according to claim 13, wherein the host material has a thermal conductivity at standard conditions of at least 0.1 W/(m.Math.K).

16. A support supporting at least one luminescent particle (1) according to claim 1 or a light emitting material comprising at least one host material and said at least one luminescent particle (1).

17. The support according to claim 16, wherein the support is a LED chip or microsized LED.

18. An optoelectronic device comprising at least one luminescent particle (1) according to claim 1 or a light emitting material comprising at least one host material and said at least one luminescent particle (1).

Description

BRIEF DESCRIPTION OF THE DRAWINGS

(1) FIG. 1 illustrates a luminescent particle 1 comprising a first material 11 and particles 2; wherein each particle 2 comprises a second material 21 and at least one nanoparticle 3 dispersed in said second material 21.

(2) FIG. 2 illustrates a luminescent particle 1 comprising a first material 11 and particles 2; wherein each particle 2 comprises a second material 21 and at least one spherical nanoparticle 31 dispersed in said second material 21.

(3) FIG. 3 illustrates a luminescent particle 1 comprising a first material 11 and particles 2; wherein each particle 2 comprises a second material 21 and at least one 2D nanoparticle 32 dispersed in said second material 21.

(4) FIG. 4 illustrates a luminescent particle 1 comprising a first material 11 and particles 2; wherein each particle 2 comprises a second material 21, at least one spherical nanoparticle 31 and at least one 2D nanoparticle 32 dispersed in said second material 21.

(5) FIG. 5 illustrates a luminescent particle 1 comprising different particles 2.

(6) FIG. 6A illustrates a heterostructured luminescent particle 1, wherein the core 12 of the luminescent particle 1 comprises at least one particle 2 and the shell 13 of the luminescent particle 1 does not comprise particles 2.

(7) FIG. 6B illustrates a heterostructured luminescent particle 1, wherein the at least one particle 2 is a heterostructure.

(8) FIG. 6C illustrates a heterostructured luminescent particle 1, wherein the core 12 of the luminescent particle 1 comprises at least one particle 2 and the shell 13 of the luminescent particle 1 comprises at least one particle 2.

(9) FIG. 6D illustrates a heterostructured luminescent particle 1, wherein the core 12 of the luminescent particle 1 comprises at least one particle 2 and the shell 13 of the luminescent particle 1 comprises at least one nanoparticle 3.

(10) FIG. 7A illustrates a luminescent particle 1 with at least one nanoparticle 2 adsorbed with a cement on its surface.

(11) FIG. 7B illustrates a luminescent particle 1 with at least one nanoparticle 2 located on its surface, wherein the at least one particle 2 has some of its volume trapped in the first material 11.

(12) FIG. 8A illustrates a luminescent particle 1 comprising at least one particle 2 dispersed in the first material 11; and at least one particle 2 adsorbed with a cement on the surface of said luminescent particle 1.

(13) FIG. 8B illustrates a luminescent particle 1 comprising at least one particle 2 dispersed in the first material 11; and at least one particle 2 located on the surface with some of its volume trapped in the first material 11.

(14) FIG. 9 illustrates a luminescent particle 1 further comprising at least one nanoparticle 3 dispersed in the first material 11.

(15) FIG. 10A illustrates a luminescent particle 1 comprising at least one nanoparticle 2 located on its surface and a dense particle 9 dispersed in the first material 11.

(16) FIG. 10B illustrates a luminescent particle 1 comprising at least one nanoparticle 2 and a dense particle 9 dispersed in the first material 11.

(17) FIG. 11 illustrates a bead 8 comprising a third material 81 and the luminescent particle 1 is dispersed in said third material 81.

(18) FIG. 12A illustrates a core nanoparticle 33 without a shell.

(19) FIG. 12B illustrates a core 33/shell 34 nanoparticle 3 with one shell 34.

(20) FIG. 12C illustrates a core 33/shell (34, 35) nanoparticle 3 with two different shells (34, 35).

(21) FIG. 12D illustrates a core 33/shell (34, 35, 36) nanoparticle 3 with two different shells (34, 35) surrounded by an oxide insulator shell 36.

(22) FIG. 12E illustrates a core 33/crown 37 nanoparticle 32.

(23) FIG. 12F illustrates a sectional view of a core 33/shell 34 nanoparticle 32 with one shell 34.

(24) FIG. 12G illustrates a sectional view of a core 33/shell (34, 35) nanoparticle 32 with two different shells (34, 35).

(25) FIG. 12H illustrates a sectional view of a core 33/shell (34, 35, 36) nanoparticle 32 with two different shells (34, 35) surrounded by an oxide insulator shell 36.

(26) FIG. 13A illustrates a light emitting material 7 comprising a host material 71 and at least one luminescent particle 1 of the invention.

(27) FIG. 13B illustrates a light emitting material 7 comprising a host material 71; at least one luminescent particle 1 of the invention; a plurality of particles comprising an inorganic material 14; and a plurality of 2D nanoparticles 32.

(28) FIG. 14A illustrates an optoelectronic device comprising a LED support 4, a LED chip 5 and luminescent particles 1 deposited on said LED chip 5, wherein the luminescent particles 1 cover the LED chip 5.

(29) FIG. 14B illustrates an optoelectronic device comprising a LED support 4, a LED chip 5 and luminescent particles 1 deposited on said LED chip 5 wherein the luminescent particles 1 cover and surround the LED chip 5.

(30) FIG. 15 illustrates a microsized LED 6 array comprising a LED support 4 and a plurality of microsized LED 6, wherein the pixel pitch D is the distance from the center of a pixel to the center of the next pixel.

(31) FIG. 16A illustrates an optoelectronic device comprising a LED support 4, a microsized LED 6 and luminescent particles 1 deposited on said microsized LED 6, wherein the luminescent particles 1 cover the microsized LED 6.

(32) FIG. 16B illustrates an optoelectronic device comprising a LED support 4, a microsized LED 6 and luminescent particles 1 deposited on said microsized LED 6 wherein the luminescent particles 1 cover and surround the microsized LED 6.

(33) FIG. 17A is a TEM image of CdSe/CdZnS@HfO.sub.2@SiO.sub.2 particles

(34) FIG. 17B is a TEM image of CdSe/CdZnS@HfO.sub.2@SiO.sub.2 particles

(35) FIG. 17C is a TEM image of HfO.sub.2 particles

(36) FIG. 18A illustrates a color conversion layer as described in the invention.

(37) FIG. 18B illustrates a color conversion layer as described in the invention.

(38) FIG. 18C illustrates a light emitting material comprising at least two host materials.

(39) FIG. 18D illustrates a light emitting material comprising at least two host materials.

(40) FIG. 18E illustrates a color conversion layer comprising three sub-pixels, wherein the first sub-pixel emits a green secondary light (G), the second sub-pixel emits a red secondary light (R), the third sub-pixel is free of light emitting material 7 or inorganic phosphor.

(41) FIG. 19 illustrates a structure of a display apparatus as described in the invention comprising an active matrix to control the light intensity passing through the liquid crystal layer before said light excites a color conversion layer comprising an array of light emitting materials.

(42) FIG. 20 illustrates a structure of a display apparatus as described in the invention comprising an optical enhancement film above the color conversion layer.

(43) FIG. 21 illustrates a structure of a display apparatus as described in the invention comprising a glass substrate.

(44) FIG. 22 illustrates a display apparatus comprising an individual light source for each light emitting material of the array of light emitting materials.

(45) FIG. 23 illustrates a display apparatus comprising at least one laser source and an array of light emitting materials.

(46) FIGS. 24A and 24B illustrate a display apparatus comprising at least one color conversion layer deposited onto a solid support.

(47) FIGS. 25A and 25B illustrate a color conversion layer comprising an array of light emitting materials surrounded by a host material.

(48) FIG. 26 illustrates an illumination source comprising a light source and a color conversion layer.

(49) FIG. 27 illustrates an illumination source comprising an array of light source forming pixels and a color conversion layer comprising an array of light emitting materials.

(50) FIG. 28 illustrates an illumination source wherein each pixel of the color conversion layer is illuminated by three light sources.

(51) FIG. 29 illustrates an illumination source wherein each light source pixel of the light source is able to illuminate several pixels of the color conversion layer.

(52) FIG. 30 illustrates an illumination source wherein the color conversion layer is upon a light guide, a reflector and a light source.

(53) FIG. 31 illustrates an illumination source wherein the color conversion layer is between the light source and the reflector.

(54) FIG. 32 illustrates an illumination source wherein the color conversion layer is deposited on the light source.

(55) FIG. 33 illustrates a display apparatus comprising a light source, the color conversion layer, polarizers, an active matrix, a layer of liquid crystals material and a color filer layer.

(56) FIGS. 34A and 34B illustrate a display apparatus wherein the light source is a backlight unit comprising a color conversion layer.

(57) FIG. 35 illustrates a display apparatus wherein the light source is a backlight unit comprising a color conversion layer.

(58) FIG. 36 illustrates a display apparatus comprising a light source and an active matrix.

(59) FIG. 37 illustrates a display apparatus wherein the color conversion layer is deposited onto a rotation wheel and is excited by a light source.

(60) FIG. 38 illustrates a display apparatus wherein the color conversion layer is deposited onto a rotation wheel and is excited by a light source.

(61) FIG. 39 illustrates a display apparatus wherein the color conversion layer is deposited onto a rotation wheel and is excited by a light source. Said rotation wheel is configured to work in a reflective mode.

(62) FIG. 40A illustrates a display apparatus comprising a digital micromirror device according to the invention.

(63) FIG. 40B illustrates a digital micromirror device according to the invention.

(64) FIG. 41 illustrates a a rotation wheel, wherein the color conversion layer forms a ring on said rotation wheel.

(65) FIG. 42 illustrates a display apparatus wherein the color conversion layer is deposited onto a rotation wheel to form a ring and is excited by a light source.

EXAMPLES

(66) The present invention is further illustrated by the following examples.

Example 1: Inorganic Nanoparticles Preparation

(67) Nanoparticles used in the examples herein were prepared according to methods of the art (Lhuillier E. et al., Acc. Chem. Res., 2015, 48 (1), pp 22-30; Pedetti S. et al., J. Am. Chem. Soc., 2014, 136 (46), pp 16430-16438; Ithurria S. et al., J. Am. Chem. Soc., 2008, 130, 16504-16505; Nasilowski M. et al., Chem. Rev. 2016, 116, 10934-10982).

(68) Nanoparticles used in the examples herein were selected in the group comprising CdSe/CdZnS, CdSe, CdS, CdTe, CdSe/CdS, CdSe/ZnS, CdSe/CdZnS, CdS/ZnS, CdS/CdZnS, CdTe/ZnS, CdTe/CdZnS, CdSeS/ZnS, CdSeS/CdS, CdSeS/CdZnS, CuInS.sub.2/ZnS, CuInSe.sub.2/ZnS, InP/CdS, InP/ZnS, InZnP/ZnS, InP/ZnSeS, InP/ZnSe, InP/CdZnS, CdSe/CdZnS/ZnS, CdSe/ZnS/CdZnS, CdSe/CdS/ZnS, CdSe/CdS/CdZnS, CdSe/ZnSe/ZnS, CdSeS/CdS/ZnS, CdSeS/CdS/CdZnS, CdSeS/CdZnS/ZnS, CdSeS/ZnSe/ZnS, CdSeS/ZnSe/CdZnS, CdSeS/ZnS/CdZnS, CdSe/ZnS/CdS, CdSeS/ZnS/CdS, CdSe/ZnSe/CdZnS, InP/ZnSe/ZnS, InP/CdS/ZnSe/ZnS, InP/CdS/ZnS, InP/ZnS/CdS, InP/GaP/ZnS, InP/GaP/ZnSe, InP/CdZnS/ZnS, InP/ZnS/CdZnS, InP/CdS/CdZnS, InP/ZnSe/CdZnS, InP/ZnS/ZnSe, InP/GaP/ZnSe/ZnS, InP/ZnS/ZnSe/ZnS, nanoplatelets or quantum dots.

Example 2: Exchange Ligands for Phase Transfer in Basic Aqueous Solution

(69) 100 μL of CdSe/CdZnS nanoplatelets suspended in heptane were mixed with 3-mercaptopropionic acid and heated at 60° C. for several hours. The nanoparticles were then precipitated by centrifugation and redispersed in dimethylformamide Potassium tert-butoxide were added to the solution before adding ethanol and centrifugate. The final colloidal nanoparticles were redispersed in water.

Example 3: Exchange Ligands for Phase Transfer In Acidic Aqueous Solution

(70) 100 μL of CdSe/CdZnS nanoplatelets suspended in a basic aqueous solution were mixed with ethanol and centrifugated. A PEG-based polymer was solubilized in water and added to the precipitated nanoplatelets. Acetic acid was dissolved in the colloidal suspension to control the acidic pH.

Example 4: InP/GaP/ZnSe/ZnS@Al.SUB.2.O.SUB.3.@HfO.SUB.2

(71) 1st Step

(72) 100 μL of InP/GaP/ZnSe/ZnS nanocrystals suspended in heptane (10 mg/mL) were mixed with aluminium tri-sec butoxide and 5 mL of pentane, then loaded on a spray-drying set-up. On another side, a basic aqueous solution was prepared and loaded the same spray-drying set-up, but at a different location than the first heptane solution. The two liquids were sprayed simultaneously towards a tube furnace heated at a temperature ranging from the boiling point of the solvent to 1000° C. with a nitrogen flow. The resulting particles InP/GaP/ZnSe/ZnS@Al.sub.2O.sub.3 were collected at the surface of a filter.

(73) 2nd Step

(74) 5 mg of InP/GaP/ZnSe/ZnS@Al.sub.2O.sub.3 particles were suspended in 5 mL of pentane and mixed with hafnium n-butoxide, then loaded on a spray-drying set-up. On another side, a basic aqueous solution was prepared and loaded the same spray-drying set-up, but at a different location than the first heptane solution. The two liquids were sprayed simultaneously towards a tube furnace heated at a temperature ranging from the boiling point of the solvent to 1000° C. with a nitrogen flow. The luminescent particles InP/GaP/ZnSe/ZnS@Al.sub.2O.sub.3@HfO.sub.2 were collected at the surface of a filter.

(75) The same procedure was carried out by replacing InP/GaP/ZnSe/ZnS nanocrystals with CdSe/CdZnS, CdSe, CdS, CdTe, CdSe/CdS, CdSe/ZnS, CdSe/CdZnS, CdS/ZnS, CdS/CdZnS, CdTe/ZnS, CdTe/CdZnS, CdSeS/ZnS, CdSeS/CdS, CdSeS/CdZnS, CuInS.sub.2/ZnS, CuInSe.sub.2/ZnS, InP/CdS, InP/ZnS, InZnP/ZnS, InP/ZnSeS, InP/ZnSe, InP/CdZnS, CdSe/CdZnS/ZnS, CdSe/ZnS/CdZnS, CdSe/CdS/ZnS, CdSe/CdS/CdZnS, CdSe/ZnSe/ZnS, CdSeS/CdS/ZnS, CdSeS/CdS/CdZnS, CdSeS/CdZnS/ZnS, CdSeS/ZnSe/ZnS, CdSeS/ZnSe/CdZnS, CdSeS/ZnS/CdZnS, CdSe/ZnS/CdS, CdSeS/ZnS/CdS, CdSe/ZnSe/CdZnS, InP/ZnSe/ZnS, InP/CdS/ZnSe/ZnS, InP/CdS/ZnS, InP/ZnS/CdS, InP/GaP/ZnS, InP/GaP/ZnSe, InP/CdZnS/ZnS, InP/ZnS/CdZnS, InP/CdS/CdZnS, InP/ZnSe/CdZnS, InP/ZnS/ZnSe, InP/GaP/ZnSe/ZnS, InP/ZnS/ZnSe/ZnS, nanoplatelets or quantum dots, or a mixture thereof.

(76) The same procedure was carried out by replacing InP/GaP/ZnSe/ZnS nanocrystals with organic nanoparticles, inorganic nanoparticles such as metal nanoparticles, halide nanoparticles, chalcogenide nanoparticles, phosphide nanoparticles, sulfide nanoparticles, metalloid nanoparticles, metallic alloy nanoparticles, phosphor nanoparticles, perovskite nanoparticles, ceramic nanoparticles such as for example oxide nanoparticles, carbide nanoparticles, nitride nanoparticles, or a mixture thereof.

(77) The same procedure was carried out by replacing Al.sub.2O.sub.3 and/or HfO.sub.2 with ZnTe, Al.sub.2O.sub.3, SiO.sub.2, TiO.sub.2, HfO.sub.2, ZnSe, ZnO, ZnS, SiZrO.sub.2, SiHfO.sub.2 or MgO, or a mixture thereof. Reaction temperature of the above procedure is adapted according to the inorganic material chosen.

(78) The same procedure was carried out by replacing Al.sub.2O.sub.3 and/or HfO.sub.2 with a metal material, halide material, chalcogenide material, phosphide material, sulfide material, metalloid material, metallic alloy material, ceramic material such as for example oxide, carbide, nitride, glass, enamel, ceramic, stone, precious stone, pigment, cement and/or inorganic polymer, or a mixture thereof. Reaction temperature of the above procedure is adapted according to the inorganic material chosen.

Example 5: InP/ZnS/ZnSe/ZnS@Al.SUB.2.O.SUB.3.@HfO.SUB.2

(79) 1st Step

(80) 100 μL of InP/ZnS/ZnSe/ZnS nanocrystals suspended in heptane (10 mg/mL) were mixed with aluminium tri-sec butoxide and 5 mL of pentane, then loaded on a spray-drying set-up. On another side, a basic aqueous solution was prepared and loaded the same spray-drying set-up, but at a different location than the first heptane solution. The two liquids were sprayed simultaneously towards a tube furnace heated at a temperature ranging from the boiling point of the solvent to 1000° C. with a nitrogen flow. The resulting particles InP/ZnS/ZnSe/ZnS@Al.sub.2O.sub.3 were collected at the surface of a filter.

(81) 2nd Step

(82) 5 mg of InP/ZnS/ZnSe/ZnS@Al.sub.2O.sub.3 particles were suspended in 5 mL of pentane and mixed with hafnium n-butoxide, then loaded on a spray-drying set-up. On another side, a basic aqueous solution was prepared and loaded the same spray-drying set-up, but at a different location than the first heptane solution. The two liquids were sprayed simultaneously towards a tube furnace heated at a temperature ranging from the boiling point of the solvent to 1000° C. with a nitrogen flow. The luminescent particles InP/ZnS/ZnSe/ZnS@Al.sub.2O.sub.3@HfO.sub.2 were collected at the surface of a filter.

(83) The same procedure was carried out by replacing InP/ZnS/ZnSe/ZnS nanocrystals with CdSe, CdS, CdTe, CdSe/CdS, CdSe/ZnS, CdSe/CdZnS, CdSe/CdZnS, CdS/ZnS, CdS/CdZnS, CdTe/ZnS, CdTe/CdZnS, CdSeS/ZnS, CdSeS/CdS, CdSeS/CdZnS, CuInS.sub.2/ZnS, CuInSe.sub.2/ZnS, InP/CdS, InP/ZnS, InZnP/ZnS, InP/ZnSeS, InP/ZnSe, InP/CdZnS, CdSe/CdZnS/ZnS, CdSe/ZnS/CdZnS, CdSe/CdS/ZnS, CdSe/CdS/CdZnS, CdSe/ZnSe/ZnS, CdSeS/CdS/ZnS, CdSeS/CdS/CdZnS, CdSeS/CdZnS/ZnS, CdSeS/ZnSe/ZnS, CdSeS/ZnSe/CdZnS, CdSeS/ZnS/CdZnS, CdSe/ZnS/CdS, CdSeS/ZnS/CdS, CdSe/ZnSe/CdZnS, InP/ZnSe/ZnS, InP/CdS/ZnSe/ZnS, InP/CdS/ZnS, InP/ZnS/CdS, InP/GaP/ZnS, InP/GaP/ZnSe, InP/CdZnS/ZnS, InP/ZnS/CdZnS, InP/CdS/CdZnS, InP/ZnSe/CdZnS, InP/ZnS/ZnSe, InP/GaP/ZnSe/ZnS, InP/ZnS/ZnSe/ZnS, nanoplatelets or quantum dots, or a mixture thereof.

(84) The same procedure was carried out by replacing InP/ZnS/ZnSe/ZnS nanocrystals with organic nanoparticles, inorganic nanoparticles such as metal nanoparticles, halide nanoparticles, chalcogenide nanoparticles, phosphide nanoparticles, sulfide nanoparticles, metalloid nanoparticles, metallic alloy nanoparticles, phosphor nanoparticles, perovskite nanoparticles, ceramic nanoparticles such as for example oxide nanoparticles, carbide nanoparticles, nitride nanoparticles, or a mixture thereof.

(85) The same procedure was carried out by replacing Al.sub.2O.sub.3 and/or HfO.sub.2 with ZnTe, Al.sub.2O.sub.3, SiO.sub.2, TiO.sub.2, HfO.sub.2, ZnSe, ZnO, ZnS, SiZrO.sub.2, SiHfO.sub.2 or MgO, or a mixture thereof. Reaction temperature of the above procedure is adapted according to the inorganic material chosen.

(86) The same procedure was carried out by replacing Al.sub.2O.sub.3 and/or HfO.sub.2 with a metal material, halide material, chalcogenide material, phosphide material, sulfide material, metalloid material, metallic alloy material, ceramic material such as for example oxide, carbide, nitride, glass, enamel, ceramic, stone, precious stone, pigment, cement and/or inorganic polymer, or a mixture thereof. Reaction temperature of the above procedure is adapted according to the inorganic material chosen.

Example 6: CdSe/CdZnS@HfO.SUB.2.@Si.SUB.0.8.Hf.SUB.0.2.O.SUB.2

(87) 1st Step

(88) 100 μL of CdSe/CdZnS nanoplatelets suspended in heptane (10 mg/mL) were mixed with hafnium n-butoxide and 5 mL of pentane, then loaded on a spray-drying set-up. On another side, an aqueous solution was prepared and loaded the same spray-drying set-up, but at a different location than the first pentane solution. The two liquids were sprayed simultaneously towards a tube furnace heated at a temperature ranging from the boiling point of the solvent to 1000° C. with a nitrogen flow. The resulting particles CdSe/CdZnS@HfO.sub.2 were collected at the surface of a filter.

(89) 2nd Step

(90) 50 mg of CdSe/CdZnS@HfO.sub.2 particles were suspended in 20 mL of ethanol and mixed with TEOS, hafnium oxychloride and water, then loaded on a spray-drying set-up. The liquid was sprayed towards a tube furnace heated at a temperature ranging from the boiling point of the solvent to 1000° C. with a nitrogen flow. The luminescent particles CdSe/CdZnS@HfO.sub.2@SiHfO.sub.2 were collected at the surface of a filter.

(91) The same procedure was carried out by replacing CdSe/CdZnS nanoplatelets with CdSe, CdS, CdTe, CdSe/CdS, CdSe/ZnS, CdSe/CdZnS, CdS/ZnS, CdS/CdZnS, CdTe/ZnS, CdTe/CdZnS, CdSeS/ZnS, CdSeS/CdS, CdSeS/CdZnS, CuInS.sub.2/ZnS, CuInSe.sub.2/ZnS, InP/CdS, InP/ZnS, InZnP/ZnS, InP/ZnSeS, InP/ZnSe, InP/CdZnS, CdSe/CdZnS/ZnS, CdSe/ZnS/CdZnS, CdSe/CdS/ZnS, CdSe/CdS/CdZnS, CdSe/ZnSe/ZnS, CdSeS/CdS/ZnS, CdSeS/CdS/CdZnS, CdSeS/CdZnS/ZnS, CdSeS/ZnSe/ZnS, CdSeS/ZnSe/CdZnS, CdSeS/ZnS/CdZnS, CdSe/ZnS/CdS, CdSeS/ZnS/CdS, CdSe/ZnSe/CdZnS, InP/ZnSe/ZnS, InP/CdS/ZnSe/ZnS, InP/CdS/ZnS, InP/ZnS/CdS, InP/GaP/ZnS, InP/GaP/ZnSe, InP/CdZnS/ZnS, InP/ZnS/CdZnS, InP/CdS/CdZnS, InP/ZnSe/CdZnS, InP/ZnS/ZnSe, InP/GaP/ZnSe/ZnS, InP/ZnS/ZnSe/ZnS, nanoplatelets or quantum dots, or a mixture thereof.

(92) The same procedure was carried out by replacing CdSe/CdZnS nanoplatelets with organic nanoparticles, inorganic nanoparticles such as metal nanoparticles, halide nanoparticles, chalcogenide nanoparticles, phosphide nanoparticles, sulfide nanoparticles, metalloid nanoparticles, metallic alloy nanoparticles, phosphor nanoparticles, perovskite nanoparticles, ceramic nanoparticles such as for example oxide nanoparticles, carbide nanoparticles, nitride nanoparticles, or a mixture thereof.

(93) The same procedure was carried out by replacing SiHfO.sub.2 and/or HfO.sub.2 with ZnTe, Al.sub.2O.sub.3, SiO.sub.2, TiO.sub.2, HfO.sub.2, ZnSe, ZnO, ZnS, SiZrO.sub.2, SiHfO.sub.2 or MgO, or a mixture thereof. Reaction temperature of the above procedure is adapted according to the inorganic material chosen.

(94) The same procedure was carried out by replacing SiHfO.sub.2 and/or HfO.sub.2 with a metal material, halide material, chalcogenide material, phosphide material, sulfide material, metalloid material, metallic alloy material, ceramic material such as for example oxide, carbide, nitride, glass, enamel, ceramic, stone, precious stone, pigment, cement and/or inorganic polymer, or a mixture thereof. Reaction temperature of the above procedure is adapted according to the inorganic material chosen.

Example 7: CdSe/CdZnS@HfO.SUB.2.@Si.SUB.0.8.Zr.SUB.0.2.O.SUB.2

(95) 1st Step

(96) 100 μL of CdSe/CdZnS nanoplatelets suspended in heptane (10 mg/mL) were mixed with hafnium n-butoxide and 5 mL of pentane, then loaded on a spray-drying set-up. On another side, an aqueous solution was prepared and loaded the same spray-drying set-up, but at a different location than the first heptane solution. The two liquids were sprayed simultaneously towards a tube furnace heated at a temperature ranging from the boiling point of the solvent to 1000° C. with a nitrogen flow. The resulting particles CdSe/CdZnS@HfO.sub.2 were collected at the surface of a filter.

(97) 2nd Step

(98) 50 mg of CdSe/CdZnS@HfO.sub.2 particles were suspended in 20 mL of ethanol and mixed with TEOS, zirconium oxychloride and water, then loaded on a spray-drying set-up. The liquid was sprayed towards a tube furnace heated at a temperature ranging from the boiling point of the solvent to a temperature ranging from the boiling point of the solvent to 1000° C. with a nitrogen flow. The luminescent particles CdSe/CdZnS@HfO.sub.2@SiZrO.sub.2 were collected at the surface of a filter.

(99) The same procedure was carried out by replacing CdSe/CdZnS nanoplatelets with CdSe, CdS, CdTe, CdSe/CdS, CdSe/ZnS, CdSe/CdZnS, CdS/ZnS, CdS/CdZnS, CdTe/ZnS, CdTe/CdZnS, CdSeS/ZnS, CdSeS/CdS, CdSeS/CdZnS, CuInS.sub.2/ZnS, CuInSe.sub.2/ZnS, InP/CdS, InP/ZnS, InZnP/ZnS, InP/ZnSeS, InP/ZnSe, InP/CdZnS, CdSe/CdZnS/ZnS, CdSe/ZnS/CdZnS, CdSe/CdS/ZnS, CdSe/CdS/CdZnS, CdSe/ZnSe/ZnS, CdSeS/CdS/ZnS, CdSeS/CdS/CdZnS, CdSeS/CdZnS/ZnS, CdSeS/ZnSe/ZnS, CdSeS/ZnSe/CdZnS, CdSeS/ZnS/CdZnS, CdSe/ZnS/CdS, CdSeS/ZnS/CdS, CdSe/ZnSe/CdZnS, InP/ZnSe/ZnS, InP/CdS/ZnSe/ZnS, InP/CdS/ZnS, InP/ZnS/CdS, InP/GaP/ZnS, InP/GaP/ZnSe, InP/CdZnS/ZnS, InP/ZnS/CdZnS, InP/CdS/CdZnS, InP/ZnSe/CdZnS, InP/ZnS/ZnSe, InP/GaP/ZnSe/ZnS, InP/ZnS/ZnSe/ZnS, nanoplatelets or quantum dots, or a mixture thereof.

(100) The same procedure was carried out by replacing CdSe/CdZnS nanoplatelets with organic nanoparticles, inorganic nanoparticles such as metal nanoparticles, halide nanoparticles, chalcogenide nanoparticles, phosphide nanoparticles, sulfide nanoparticles, metalloid nanoparticles, metallic alloy nanoparticles, phosphor nanoparticles, perovskite nanoparticles, ceramic nanoparticles such as for example oxide nanoparticles, carbide nanoparticles, nitride nanoparticles, or a mixture thereof.

(101) The same procedure was carried out by replacing SiZrO.sub.2 and/or HfO.sub.2 with ZnTe, Al.sub.2O.sub.3, SiO.sub.2, TiO.sub.2, HfO.sub.2, ZnSe, ZnO, ZnS, SiZrO.sub.2, SiHfO.sub.2 or MgO, or a mixture thereof. Reaction temperature of the above procedure is adapted according to the inorganic material chosen.

(102) The same procedure was carried out by replacing SiZrO.sub.2 and/or HfO.sub.2 with a metal material, halide material, chalcogenide material, phosphide material, sulfide material, metalloid material, metallic alloy material, ceramic material such as for example oxide, carbide, nitride, glass, enamel, ceramic, stone, precious stone, pigment, cement and/or inorganic polymer, or a mixture thereof. Reaction temperature of the above procedure is adapted according to the inorganic material chosen.

Example 8: CdSe/CdZnS@Al.SUB.2.O.SUB.3.@HfO.SUB.2

(103) 1st Step

(104) 100 μL of CdSe/CdZnS nanoplatelets suspended in heptane (10 mg/mL) were mixed with aluminium tri-sec butoxide and 5 mL of pentane, then loaded on a spray-drying set-up. On another side, an aqueous solution was prepared and loaded the same spray-drying set-up, but at a different location than the first heptane solution. The two liquids were sprayed simultaneously towards a tube furnace heated at a temperature ranging from the boiling point of the solvent to 1000° C. with a nitrogen flow. The resulting particles CdSe/CdZnS@Al.sub.2O.sub.3 (particles 2) were collected at the surface of a filter.

(105) 2nd Step

(106) 5 mg of CdSe/CdZnS@Al.sub.2O.sub.3 particles were suspended in 5 mL of pentane and mixed with hafnium n-butoxide, then loaded on a spray-drying set-up. On another side, an aqueous solution was prepared and loaded the same spray-drying set-up, but at a different location than the first heptane solution. The two liquids were sprayed simultaneously towards a tube furnace heated at a temperature ranging from the boiling point of the solvent to 1000° C. with a nitrogen flow. The luminescent particles CdSe/CdZnS@Al.sub.2O.sub.3@HfO.sub.2 were collected at the surface of a filter.

(107) The same procedure was carried out by replacing CdSe/CdZnS nanoplatelets with CdSe, CdS, CdTe, CdSe/CdS, CdSe/ZnS, CdSe/CdZnS, CdS/ZnS, CdS/CdZnS, CdTe/ZnS, CdTe/CdZnS, CdSeS/ZnS, CdSeS/CdS, CdSeS/CdZnS, CuInS.sub.2/ZnS, CuInSe.sub.2/ZnS, InP/CdS, InP/ZnS, InZnP/ZnS, InP/ZnSeS, InP/ZnSe, InP/CdZnS, CdSe/CdZnS/ZnS, CdSe/ZnS/CdZnS, CdSe/CdS/ZnS, CdSe/CdS/CdZnS, CdSe/ZnSe/ZnS, CdSeS/CdS/ZnS, CdSeS/CdS/CdZnS, CdSeS/CdZnS/ZnS, CdSeS/ZnSe/ZnS, CdSeS/ZnSe/CdZnS, CdSeS/ZnS/CdZnS, CdSe/ZnS/CdS, CdSeS/ZnS/CdS, CdSe/ZnSe/CdZnS, InP/ZnSe/ZnS, InP/CdS/ZnSe/ZnS, InP/CdS/ZnS, InP/ZnS/CdS, InP/GaP/ZnS, InP/GaP/ZnSe, InP/CdZnS/ZnS, InP/ZnS/CdZnS, InP/CdS/CdZnS, InP/ZnSe/CdZnS, InP/ZnS/ZnSe, InP/GaP/ZnSe/ZnS, InP/ZnS/ZnSe/ZnS, nanoplatelets or quantum dots, or a mixture thereof.

(108) The same procedure was carried out by replacing CdSe/CdZnS nanoplatelets with organic nanoparticles, inorganic nanoparticles such as metal nanoparticles, halide nanoparticles, chalcogenide nanoparticles, phosphide nanoparticles, sulfide nanoparticles, metalloid nanoparticles, metallic alloy nanoparticles, phosphor nanoparticles, perovskite nanoparticles, ceramic nanoparticles such as for example oxide nanoparticles, carbide nanoparticles, nitride nanoparticles, or a mixture thereof.

(109) The same procedure was carried out by replacing Al.sub.2O.sub.3 and/or HfO.sub.2 with ZnTe, Al.sub.2O.sub.3, SiO.sub.2, TiO.sub.2, HfO.sub.2, ZnSe, ZnO, ZnS, SiZrO.sub.2, SiHfO.sub.2 or MgO, or a mixture thereof. Reaction temperature of the above procedure is adapted according to the inorganic material chosen.

(110) The same procedure was carried out by replacing Al.sub.2O.sub.3 and/or HfO.sub.2 with a metal material, halide material, chalcogenide material, phosphide material, sulfide material, metalloid material, metallic alloy material, ceramic material such as for example oxide, carbide, nitride, glass, enamel, ceramic, stone, precious stone, pigment, cement and/or inorganic polymer, or a mixture thereof. Reaction temperature of the above procedure is adapted according to the inorganic material chosen.

Example 9: CdSe/CdZnS@Al.SUB.2.O.SUB.3 .and SnO.SUB.2 .particles encapsulated in Al.SUB.2.O.SUB.3

(111) 5 mg of a previously prepared CdSe/CdZnS@Al.sub.2O.sub.3 particles (size: 150 nm) were suspended in 5 mL of pentane along with larger particles (SnO.sub.2, 2 μm) and mixed with aluminium tri-sec butoxide, then loaded on a spray-drying set-up. On another side, a basic aqueous solution was prepared and loaded the same spray-drying set-up, but at a different location than the first heptane solution. The two liquids were sprayed simultaneously towards a tube furnace heated at a temperature ranging from the boiling point of the solvent to 1000° C. with a nitrogen flow. The luminescent particles, CdSe/CdZnS@Al.sub.2O.sub.3 and SnO.sub.2 particles encapsulated in Al.sub.2O.sub.3, were collected at the surface of a filter.

(112) Note: the amount of aluminium tri-sec butoxide is calculated so that the amount of Al.sub.2O.sub.3 formed would form a layer around the SnO.sub.2 particle so that it is thicker than the solid diameter.

(113) The same procedure was carried out by replacing CdSe/CdZnS nanoplatelets and/or SnO.sub.2 particles with CdSe, CdS, CdTe, CdSe/CdS, CdSe/ZnS, CdSe/CdZnS, CdS/ZnS, CdS/CdZnS, CdTe/ZnS, CdTe/CdZnS, CdSeS/ZnS, CdSeS/CdS, CdSeS/CdZnS, CuInS.sub.2/ZnS, CuInSe.sub.2/ZnS, InP/CdS, InP/ZnS, InZnP/ZnS, InP/ZnSeS, InP/ZnSe, InP/CdZnS, CdSe/CdZnS/ZnS, CdSe/ZnS/CdZnS, CdSe/CdS/ZnS, CdSe/CdS/CdZnS, CdSe/ZnSe/ZnS, CdSeS/CdS/ZnS, CdSeS/CdS/CdZnS, CdSeS/CdZnS/ZnS, CdSeS/ZnSe/ZnS, CdSeS/ZnSe/CdZnS, CdSeS/ZnS/CdZnS, CdSe/ZnS/CdS, CdSeS/ZnS/CdS, CdSe/ZnSe/CdZnS, InP/ZnSe/ZnS, InP/CdS/ZnSe/ZnS, InP/CdS/ZnS, InP/ZnS/CdS, InP/GaP/ZnS, InP/GaP/ZnSe, InP/CdZnS/ZnS, InP/ZnS/CdZnS, InP/CdS/CdZnS, InP/ZnSe/CdZnS, InP/ZnS/ZnSe, InP/GaP/ZnSe/ZnS, InP/ZnS/ZnSe/ZnS, nanoplatelets or quantum dots, or a mixture thereof.

(114) The same procedure was carried out by replacing CdSe/CdZnS nanoplatelets and/or SnO.sub.2 particles with organic nanoparticles, inorganic nanoparticles such as metal nanoparticles, halide nanoparticles, chalcogenide nanoparticles, phosphide nanoparticles, sulfide nanoparticles, metalloid nanoparticles, metallic alloy nanoparticles, phosphor nanoparticles, perovskite nanoparticles, ceramic nanoparticles such as for example oxide nanoparticles, carbide nanoparticles, nitride nanoparticles, or a mixture thereof.

(115) The same procedure was carried out by replacing Al.sub.2O.sub.3 with ZnTe, Al.sub.2O.sub.3, SiO.sub.2, HfO.sub.2, ZnSe, ZnO, ZnS, TiO.sub.2, SiZrO.sub.2, SiHfO.sub.2 or MgO, or a mixture thereof. Reaction temperature of the above procedure is adapted according to the inorganic material chosen.

(116) The same procedure was carried out by replacing Al.sub.2O.sub.3 with a metal material, halide material, chalcogenide material, phosphide material, sulfide material, metalloid material, metallic alloy material, ceramic material such as for example oxide, carbide, nitride, glass, enamel, ceramic, stone, precious stone, pigment, cement and/or inorganic polymer, or a mixture thereof. Reaction temperature of the above procedure is adapted according to the inorganic material chosen.

Example 10: Phosphor Particles @Al.SUB.2.O.SUB.3.@HfO.SUB.2

(117) 1st Step

(118) 1 μm of phosphor particles (cf. list below) suspended in heptane (10 mg/mL) were mixed with aluminium tri-sec butoxide and 5 mL of pentane, then loaded on a spray-drying set-up. On another side, an aqueous solution was prepared and loaded the same spray-drying set-up, but at a different location than the first heptane solution. The two liquids were sprayed simultaneously towards a tube furnace heated at a temperature ranging from the boiling point of the solvent to 1000° C. with a nitrogen flow. The resulting particles phosphors particles@Al.sub.2O.sub.3 were collected at the surface of a filter.

(119) 2nd Step

(120) 5 mg of phosphors particles @Al.sub.2O.sub.3 were suspended in 5 mL of pentane and mixed with hafnium n-butoxide, then loaded on a spray-drying set-up. On another side, an aqueous solution was prepared and loaded the same spray-drying set-up, but at a different location than the first heptane solution. The two liquids were sprayed simultaneously towards a tube furnace heated at a temperature ranging from the boiling point of the solvent to 1000° C. with a nitrogen flow. The luminescent particles phosphor particles@Al.sub.2O.sub.3@HfO.sub.2 were collected at the surface of a filter.

(121) Phosphor particles used for this example were: Yttrium aluminium garnet particles (YAG, Y.sub.3Al.sub.5O.sub.12), (Ca,Y)-α-SiAlON:Eu particles, ((Y,Gd).sub.3(Al,Ga).sub.5O.sub.12:Ce) particles, CaAlSiN.sub.3:Eu particles, sulfide-based phosphor particles, PFS:Mn.sup.4+ particles (potassium fluorosilicate).

(122) The same procedure was carried out by replacing Al.sub.2O.sub.3 and/or HfO.sub.2 with ZnTe, Al.sub.2O.sub.3, SiO.sub.2, TiO.sub.2, HfO.sub.2, ZnSe, ZnO, ZnS, SiZrO.sub.2, SiHfO.sub.2 or MgO, or a mixture thereof. Reaction temperature of the above procedure is adapted according to the inorganic material chosen.

(123) The same procedure was carried out by replacing Al.sub.2O.sub.3 and/or HfO.sub.2 with a metal material, halide material, chalcogenide material, phosphide material, sulfide material, metalloid material, metallic alloy material, ceramic material such as for example oxide, carbide, nitride, glass, enamel, ceramic, stone, precious stone, pigment, cement and/or inorganic polymer, or a mixture thereof. Reaction temperature of the above procedure is adapted according to the inorganic material chosen.

Example 11: CdSe/CdZnS@HfO.SUB.2.@Al.SUB.2.O.SUB.3

(124) 1st Step

(125) 100 μL of CdSe/CdZnS nanoplatelets suspended in heptane (10 mg/mL) were mixed with hafnium n-butoxide and 5 mL of pentane, then loaded on a spray-drying set-up. On another side, a basic aqueous solution was prepared and loaded the same spray-drying set-up, but at a different location than the first heptane solution. The two liquids were sprayed simultaneously towards a tube furnace heated at a temperature ranging from the boiling point of the solvent to 1000° C. with a nitrogen flow. The resulting particles CdSe/CdZnS@HfO.sub.2 were collected at the surface of a filter.

(126) 2nd Step

(127) 5 mg of CdSe/CdZnS@HfO.sub.2 particles were suspended in 5 mL of pentane and mixed with aluminium tri-sec butoxide, then loaded on a spray-drying set-up. On another side, a basic aqueous solution was prepared and loaded the same spray-drying set-up, but at a different location than the first heptane solution. The two liquids were sprayed simultaneously towards a tube furnace heated at a temperature ranging from the boiling point of the solvent to 1000° C. with a nitrogen flow. The luminescent particles CdSe/CdZnS@HfO.sub.2@Al.sub.2O.sub.3 were collected at the surface of a filter.

(128) The same procedure was carried out by replacing CdSe/CdZnS nanoplatelets with CdSe, CdS, CdTe, CdSe/CdS, CdSe/ZnS, CdSe/CdZnS, CdS/ZnS, CdS/CdZnS, CdTe/ZnS, CdTe/CdZnS, CdSeS/ZnS, CdSeS/CdS, CdSeS/CdZnS, CuInS.sub.2/ZnS, CuInSe.sub.2/ZnS, InP/CdS, InP/ZnS, InZnP/ZnS, InP/ZnSeS, InP/ZnSe, InP/CdZnS, CdSe/CdZnS/ZnS, CdSe/ZnS/CdZnS, CdSe/CdS/ZnS, CdSe/CdS/CdZnS, CdSe/ZnSe/ZnS, CdSeS/CdS/ZnS, CdSeS/CdS/CdZnS, CdSeS/CdZnS/ZnS, CdSeS/ZnSe/ZnS, CdSeS/ZnSe/CdZnS, CdSeS/ZnS/CdZnS, CdSe/ZnS/CdS, CdSeS/ZnS/CdS, CdSe/ZnSe/CdZnS, InP/ZnSe/ZnS, InP/CdS/ZnSe/ZnS, InP/CdS/ZnS, InP/ZnS/CdS, InP/GaP/ZnS, InP/GaP/ZnSe, InP/CdZnS/ZnS, InP/ZnS/CdZnS, InP/CdS/CdZnS, InP/ZnSe/CdZnS, InP/ZnS/ZnSe, InP/GaP/ZnSe/ZnS, InP/ZnS/ZnSe/ZnS, nanoplatelets or quantum dots, or a mixture thereof.

(129) The same procedure was carried out by replacing CdSe/CdZnS nanoplatelets with organic nanoparticles, inorganic nanoparticles such as metal nanoparticles, halide nanoparticles, chalcogenide nanoparticles, phosphide nanoparticles, sulfide nanoparticles, metalloid nanoparticles, metallic alloy nanoparticles, phosphor nanoparticles, perovskite nanoparticles, ceramic nanoparticles such as for example oxide nanoparticles, carbide nanoparticles, nitride nanoparticles, or a mixture thereof.

(130) The same procedure was carried out by replacing Al.sub.2O.sub.3 and/or HfO.sub.2 with ZnTe, Al.sub.2O.sub.3, SiO.sub.2, TiO.sub.2, HfO.sub.2, ZnSe, ZnO, ZnS, SiZrO.sub.2, SiHfO.sub.2 or MgO, or a mixture thereof. Reaction temperature of the above procedure is adapted according to the inorganic material chosen.

(131) The same procedure was carried out by replacing Al.sub.2O.sub.3 and/or HfO.sub.2 with a metal material, halide material, chalcogenide material, phosphide material, sulfide material, metalloid material, metallic alloy material, ceramic material such as for example oxide, carbide, nitride, glass, enamel, ceramic, stone, precious stone, pigment, cement and/or inorganic polymer, or a mixture thereof. Reaction temperature of the above procedure is adapted according to the inorganic material chosen.

Example 12: CdSe/CdZnS@HfO.SUB.2 .and SnO.SUB.2 .particles encapsulated in Al.SUB.2.O.SUB.3

(132) 5 mg of a previously prepared CdSe/CdZnS@HfO.sub.2 particles (size: 150 nm) were suspended in 5 mL of pentane along with larger particles (SnO.sub.2, 2 μm) and mixed with aluminium tri-sec butoxide, then loaded on a spray-drying set-up. On another side, an aqueous solution was prepared and loaded the same spray-drying set-up, but at a different location than the first heptane solution. The two liquids were sprayed simultaneously towards a tube furnace heated at a temperature ranging from the boiling point of the solvent to 1000° C. with a nitrogen flow. The luminescent particles, CdSe/CdZnS@HfO.sub.2 and SnO.sub.2 particles encapsulated in Al.sub.2O.sub.3, were collected at the surface of a filter.

(133) Note: the amount of aluminium tri-sec butoxide is calculated so that the amount of Al.sub.2O.sub.3 formed would form a layer around the SnO.sub.2 particle so that it is thicker than the solid diameter.

(134) The same procedure was carried out by replacing CdSe/CdZnS nanoplatelets and/or SnO.sub.2 particles with CdSe, CdS, CdTe, CdSe/CdS, CdSe/ZnS, CdSe/CdZnS, CdS/ZnS, CdS/CdZnS, CdTe/ZnS, CdTe/CdZnS, CdSeS/ZnS, CdSeS/CdS, CdSeS/CdZnS, CuInS.sub.2/ZnS, CuInSe.sub.2/ZnS, InP/CdS, InP/ZnS, InZnP/ZnS, InP/ZnSeS, InP/ZnSe, InP/CdZnS, CdSe/CdZnS/ZnS, CdSe/ZnS/CdZnS, CdSe/CdS/ZnS, CdSe/CdS/CdZnS, CdSe/ZnSe/ZnS, CdSeS/CdS/ZnS, CdSeS/CdS/CdZnS, CdSeS/CdZnS/ZnS, CdSeS/ZnSe/ZnS, CdSeS/ZnSe/CdZnS, CdSeS/ZnS/CdZnS, CdSe/ZnS/CdS, CdSeS/ZnS/CdS, CdSe/ZnSe/CdZnS, InP/ZnSe/ZnS, InP/CdS/ZnSe/ZnS, InP/CdS/ZnS, InP/ZnS/CdS, InP/GaP/ZnS, InP/GaP/ZnSe, InP/CdZnS/ZnS, InP/ZnS/CdZnS, InP/CdS/CdZnS, InP/ZnSe/CdZnS, InP/ZnS/ZnSe, InP/GaP/ZnSe/ZnS, InP/ZnS/ZnSe/ZnS, nanoplatelets or quantum dots, or a mixture thereof.

(135) The same procedure was carried out by replacing CdSe/CdZnS nanoplatelets and/or SnO.sub.2 particles with organic nanoparticles, inorganic nanoparticles such as metal nanoparticles, halide nanoparticles, chalcogenide nanoparticles, phosphide nanoparticles, sulfide nanoparticles, metalloid nanoparticles, metallic alloy nanoparticles, phosphor nanoparticles, perovskite nanoparticles, ceramic nanoparticles such as for example oxide nanoparticles, carbide nanoparticles, nitride nanoparticles, or a mixture thereof.

(136) The same procedure was carried out by replacing Al.sub.2O.sub.3 and/or HfO.sub.2 with ZnTe, Al.sub.2O.sub.3, SiO.sub.2, TiO.sub.2, HfO.sub.2, ZnSe, ZnO, ZnS, SiZrO.sub.2, SiHfO.sub.2 or MgO, or a mixture thereof. Reaction temperature of the above procedure is adapted according to the inorganic material chosen.

(137) The same procedure was carried out by replacing Al.sub.2O.sub.3 and/or HfO.sub.2 with a metal material, halide material, chalcogenide material, phosphide material, sulfide material, metalloid material, metallic alloy material, ceramic material such as for example oxide, carbide, nitride, glass, enamel, ceramic, stone, precious stone, pigment, cement and/or inorganic polymer, or a mixture thereof. Reaction temperature of the above procedure is adapted according to the inorganic material chosen.

Example 13: Phosphor particles @HfO.SUB.2.@Al.SUB.2.O.SUB.3

(138) 1st Step

(139) 1 μm of phosphor particles (cf. list below) suspended in heptane (10 mg/mL) were mixed with hafnium n-butoxide and 5 mL of pentane, then loaded on a spray-drying set-up. On another side, an aqueous solution was prepared and loaded the same spray-drying set-up, but at a different location than the first heptane solution. The two liquids were sprayed simultaneously towards a tube furnace heated at a temperature ranging from the boiling point of the solvent to 1000° C. with a nitrogen flow. The resulting particles phosphors particles @HfO.sub.2 were collected at the surface of a filter.

(140) 2nd Step

(141) 5 mg of phosphors particles@HfO.sub.2 were suspended in 5 mL of pentane and mixed with aluminium tri-sec butoxide, then loaded on a spray-drying set-up. On another side, an aqueous solution was prepared and loaded the same spray-drying set-up, but at a different location than the first heptane solution. The two liquids were sprayed simultaneously towards a tube furnace heated at a temperature ranging from the boiling point of the solvent to 1000° C. with a nitrogen flow. The luminescent particles phosphor particles @HfO.sub.2@Al.sub.2O.sub.3 were collected at the surface of a filter.

(142) Phosphor particles used for this example were: Yttrium aluminium garnet particles (YAG, Y.sub.3Al.sub.5O.sub.12), (Ca,Y)-α-SiAlON:Eu particles, ((Y,Gd).sub.3(Al,Ga).sub.5O.sub.12:Ce) particles, CaAlSiN.sub.3:Eu particles, sulfide-based phosphor particles, PFS:Mn.sup.4+ particles (potassium fluorosilicate).

(143) The same procedure was carried out by replacing Al.sub.2O.sub.3 and/or HfO.sub.2 with ZnTe, Al.sub.2O.sub.3, SiO.sub.2, TiO.sub.2, HfO.sub.2, ZnSe, ZnO, ZnS, SiZrO.sub.2, SiHfO.sub.2 or MgO, or a mixture thereof. Reaction temperature of the above procedure is adapted according to the inorganic material chosen.

(144) The same procedure was carried out by replacing Al.sub.2O.sub.3 and/or HfO.sub.2 with a metal material, halide material, chalcogenide material, phosphide material, sulfide material, metalloid material, metallic alloy material, ceramic material such as for example oxide, carbide, nitride, glass, enamel, ceramic, stone, precious stone, pigment, cement and/or inorganic polymer, or a mixture thereof. Reaction temperature of the above procedure is adapted according to the inorganic material chosen.

Example 14: Preparation of CdSe/CdZnS@HfO.SUB.2.@SiO.SUB.2 .Comprising SnO.SUB.2 .Nanoparticles by Microemulsion

(145) CdSe/CdZnS@HfO.sub.2 and SnO.sub.2 nanoparticles (30-40 nm diameter) were coated with SiO.sub.2 using reverse micelles of polyoxyethylene cetylether (Nihon surfactant, C-15) using cyclohexane (purity 99.0%) as the organic phase. The concentration of the surfactant in the organic solvent was 0.5 mol/L. The microemulsion solution was prepared by injecting an aqueous solution (4.0 mL, denoted as aq.) containing 100 mg of CdSe/CdZnS@HfO.sub.2 and SnO.sub.2 nanoparticles (varying proportions) into the organic surfactant solution (100 mL) at 50° C. under magnetic stirring. An oxalic acid solution ((COOH).sub.2 aq., 1 mol/L, 3.0 mL) was used to charge positively the oxides surface. Tetraethylorthosilicate (TEOS, 0.86 mol/L in the microemulsion solution) as a SiO.sub.2 source and diluted NH.sub.4OH solution (2.70 mol/1, 15.0 ml) were charged into the microemulsion containing CdSe/CdZnS@HfO.sub.2 and SnO.sub.2 nanoparticles, and subjected to hydrolysis at 50° C. for 60 min The molar ratio of water to surfactant in the solution during TEOS hydrolysis was 23. The solid formed was centrifuged, thoroughly washed with propanol, dried at 80° C. overnight, and a thermal treatment at 130° C. for 24 h was performed in air.

(146) The same procedure was carried out by replacing CdSe/CdZnS nanoplatelets and/or SnO.sub.2 nanoparticles with CdSe, CdS, CdTe, CdSe/CdS, CdSe/ZnS, CdSe/CdZnS, CdS/ZnS, CdS/CdZnS, CdTe/ZnS, CdTe/CdZnS, CdSeS/ZnS, CdSeS/CdS, CdSeS/CdZnS, CuInS.sub.2/ZnS, CuInSe.sub.2/ZnS, InP/CdS, InP/ZnS, InZnP/ZnS, InP/ZnSeS, InP/ZnSe, InP/CdZnS, CdSe/CdZnS/ZnS, CdSe/ZnS/CdZnS, CdSe/CdS/ZnS, CdSe/CdS/CdZnS, CdSe/ZnSe/ZnS, CdSeS/CdS/ZnS, CdSeS/CdS/CdZnS, CdSeS/CdZnS/ZnS, CdSeS/ZnSe/ZnS, CdSeS/ZnSe/CdZnS, CdSeS/ZnS/CdZnS, CdSe/ZnS/CdS, CdSeS/ZnS/CdS, CdSe/ZnSe/CdZnS, InP/ZnSe/ZnS, InP/CdS/ZnSe/ZnS, InP/CdS/ZnS, InP/ZnS/CdS, InP/GaP/ZnS, InP/GaP/ZnSe, InP/CdZnS/ZnS, InP/ZnS/CdZnS, InP/CdS/CdZnS, InP/ZnSe/CdZnS, InP/ZnS/ZnSe, InP/GaP/ZnSe/ZnS, InP/ZnS/ZnSe/ZnS, nanoplatelets or quantum dots, or a mixture thereof.

(147) The same procedure was carried out by replacing CdSe/CdZnS nanoplatelets and/or SnO.sub.2 nanoparticles with organic nanoparticles, inorganic nanoparticles such as metal nanoparticles, halide nanoparticles, chalcogenide nanoparticles, phosphide nanoparticles, sulfide nanoparticles, metalloid nanoparticles, metallic alloy nanoparticles, phosphor nanoparticles, perovskite nanoparticles, ceramic nanoparticles such as for example oxide nanoparticles, carbide nanoparticles, nitride nanoparticles, or a mixture thereof.

(148) The same procedure was carried out by replacing SiO.sub.2 and/or HfO.sub.2 with ZnTe, Al.sub.2O.sub.3, SiO.sub.2, TiO.sub.2, HfO.sub.2, ZnSe, ZnO, ZnS, SiZrO.sub.2, SiHfO.sub.2 or MgO, or a mixture thereof. Reaction temperature of the above procedure is adapted according to the inorganic material chosen.

(149) The same procedure was carried out by replacing SiO.sub.2 and/or HfO.sub.2 with a metal material, halide material, chalcogenide material, phosphide material, sulfide material, metalloid material, metallic alloy material, ceramic material such as for example oxide, carbide, nitride, glass, enamel, ceramic, stone, precious stone, pigment, cement and/or inorganic polymer, or a mixture thereof. Reaction temperature of the above procedure is adapted according to the inorganic material chosen.

Example 14: bis: Preparation of CdSe/CdS/ZnS@SiO.SUB.2.@HfO.SUB.2 .Nanoparticles by Microemulsion

(150) The formation of a silica shell around the CdSe/CdS/ZnS nanocrystals was performed by an inverse water-in-oil microemulsion micelles method. In particular, 0.98 g of the surfactant Triton X-100 (C.sub.8H.sub.17C.sub.6H.sub.4(OC.sub.2H.sub.4).sub.9-10OH) and 0.75 g of 1-Hexanol as co-surfactant were mixed and dissolved in 7.5 ml of cyclohexane. Then, 0.08 nmol of CdSe/CdS/ZnS particles dispersed in hexane were injected and after 10 min of stirring with a magnetic bar, 190 μl of water and 30 μl of ammonia (29% in water) were added. After, 30 μl of TEOS were added to start the reaction of silica formation around the nanoparticles. After 6 h, another amount of 150 μl of TEOS was added to have final 100 nm diameter silica nanoparticles after 30 h of total time of growth. The CdSe/CdS/ZnS@SiO.sub.2 particles show a high monodispersity (diameter 100±4 nm), only one CdSe/CdS/ZnS nanocrystal per silica particle and a few of empty silica beads. The microemulsion was broken by adding acetone and after centrifugation, CdSe/CdS/ZnS@SiO.sub.2 particles were washed by centrifugation and sonication in different solvents (50% n-butanol-50% hexane, 50% isopropanol-50% hexane, 50% ethanol-50% hexane, two times in ethanol) and finally dispersed in 7.5 ml of ethanol with a final concentration of the order of 10 nM.

(151) 5 mg of CdSe/CdS/ZnS@SiO.sub.2 particles were suspended in 5 mL of pentane and mixed with hafnium n-butoxide, then loaded on a spray-drying set-up. On another side, a basic aqueous solution was prepared and loaded the same spray-drying set-up, but at a different location than the first heptane solution. The two liquids were sprayed simultaneously towards a tube furnace heated at a temperature ranging from the boiling point of the solvent to 1000° C. with a nitrogen flow. The luminescent particles CdSe/CdS/ZnS@SiO.sub.2@HfO.sub.2 were collected at the surface of a filter.

(152) The same procedure was carried out by replacing CdSe/CdS/ZnS nanocrystals with CdSe, CdS, CdTe, CdSe/CdS, CdSe/ZnS, CdSe/CdZnS, CdSe/CdZnS, CdS/ZnS, CdS/CdZnS, CdTe/ZnS, CdTe/CdZnS, CdSeS/ZnS, CdSeS/CdS, CdSeS/CdZnS, CuInS.sub.2/ZnS, CuInSe.sub.2/ZnS, InP/CdS, InP/ZnS, InZnP/ZnS, InP/ZnSeS, InP/ZnSe, InP/CdZnS, CdSe/CdZnS/ZnS, CdSe/ZnS/CdZnS, CdSe/CdS/ZnS, CdSe/CdS/CdZnS, CdSe/ZnSe/ZnS, CdSeS/CdS/ZnS, CdSeS/CdS/CdZnS, CdSeS/CdZnS/ZnS, CdSeS/ZnSe/ZnS, CdSeS/ZnSe/CdZnS, CdSeS/ZnS/CdZnS, CdSe/ZnS/CdS, CdSeS/ZnS/CdS, CdSe/ZnSe/CdZnS, InP/ZnSe/ZnS, InP/CdS/ZnSe/ZnS, InP/CdS/ZnS, InP/ZnS/CdS, InP/GaP/ZnS, InP/GaP/ZnSe, InP/CdZnS/ZnS, InP/ZnS/CdZnS, InP/CdS/CdZnS, InP/ZnSe/CdZnS, InP/ZnS/ZnSe, InP/GaP/ZnSe/ZnS, InP/ZnS/ZnSe/ZnS, nanoplatelets or quantum dots, or a mixture thereof.

(153) The same procedure was carried out by replacing CdSe/CdS/ZnS nanocrystals with organic nanoparticles, inorganic nanoparticles such as metal nanoparticles, halide nanoparticles, chalcogenide nanoparticles, phosphide nanoparticles, sulfide nanoparticles, metalloid nanoparticles, metallic alloy nanoparticles, phosphor nanoparticles, perovskite nanoparticles, ceramic nanoparticles such as for example oxide nanoparticles, carbide nanoparticles, nitride nanoparticles, or a mixture thereof.

(154) The same procedure was carried out by replacing SiO.sub.2 and/or HfO.sub.2 with ZnTe, Al.sub.2O.sub.3, SiO.sub.2, TiO.sub.2, HfO.sub.2, ZnSe, ZnO, ZnS, SiZrO.sub.2, SiHfO.sub.2 or MgO, or a mixture thereof. Reaction temperature of the above procedure is adapted according to the inorganic material chosen.

(155) The same procedure was carried out by replacing SiO.sub.2 and/or HfO.sub.2 with a metal material, halide material, chalcogenide material, phosphide material, sulfide material, metalloid material, metallic alloy material, ceramic material such as for example oxide, carbide, nitride, glass, enamel, ceramic, stone, precious stone, pigment, cement and/or inorganic polymer, or a mixture thereof. Reaction temperature of the above procedure is adapted according to the inorganic material chosen.

Example 15: Semiconductor Nanoplatelets@Al.SUB.2.O.SUB.3.@SiO.SUB.2

(156) The dry solid 0.05 g, i.e. semiconductor nanoplatelets @Al.sub.2O.sub.3, is weighted under dry atmosphere (glovebox) and is dispersed in 1 mL of pure/dry THF, then 0.07 mL of 2.3 mol.Math.L.sup.−1 HCl solution is added. The solution is then heated in a closed vessel to 70° C. A solution (1 mL) containing TEOS (TétraEthylOrthoSilicate) (0.5 mmol.Math.L.sup.−1) in clean THF is added dropwise over a period of 0.1 μmol.Math.min.sup.−1 under stirring. The mixture is then refluxed for about 1 h. The product is then filtered and washed consecutively with 20/80 water/THF (3×5 mL), EtOH (3×5 mL), and Et.sub.2O (3×5 mL), and dried at 80° C. under vacuum.

(157) The same procedure was carried out by replacing semiconductor nanoplatelets with organic nanoparticles, inorganic nanoparticles such as metal nanoparticles, halide nanoparticles, chalcogenide nanoparticles, phosphide nanoparticles, sulfide nanoparticles, metalloid nanoparticles, metallic alloy nanoparticles, phosphor nanoparticles, perovskite nanoparticles, ceramic nanoparticles such as for example oxide nanoparticles, carbide nanoparticles, nitride nanoparticles, or a mixture thereof.

(158) The same procedure was carried out by replacing Al.sub.2O.sub.3 and/or SiO.sub.2 with ZnTe, Al.sub.2O.sub.3, SiO.sub.2, TiO.sub.2, HfO.sub.2, ZnSe, ZnO, ZnS, SiZrO.sub.2, SiHfO.sub.2 or MgO, or a mixture thereof. Reaction temperature of the above procedure is adapted according to the inorganic material chosen.

(159) The same procedure was carried out by replacing Al.sub.2O.sub.3 and/or SiO.sub.2 with a metal material, halide material, chalcogenide material, phosphide material, sulfide material, metalloid material, metallic alloy material, ceramic material such as for example oxide, carbide, nitride, glass, enamel, ceramic, stone, precious stone, pigment, cement and/or inorganic polymer, or a mixture thereof. Reaction temperature of the above procedure is adapted according to the inorganic material chosen.

Example 16: Semiconductor Nanoplatelets @HfO.SUB.2.@SiO.SUB.2

(160) The dry solid 0.05 g, i.e. semiconductor nanoplatelets@HfO.sub.2, is weighted under dry atmosphere (glovebox) and is dispersed in 1 mL of pure/dry THF, then 0.07 mL of 2.3 mol.Math.L.sup.−1 HCl solution is added. The solution is then heated in a closed vessel to 70° C. A solution (1 mL) containing TEOS (TétraEthylOrthoSilicate) (0.5 mmol.Math.L.sup.−1) in clean THF is added dropwise over a period of 0.1 μmol.Math.min.sup.−1 under stirring. The mixture is then refluxed for about 1 h. The product is then filtered and washed consecutively with 20/80 water/THF (3×5 mL), EtOH (3×5 mL), and Et.sub.2O (3×5 mL), and dried at 80° C. under vacuum.

(161) Note 1: Trialkoxy Azidoalkyl silane, Trialkoxy Aminoalkyl silane or Trialkoxy alkylThiol silane can be added to the TEOS solution to add versatile functionalities the solid for further functionalization.

(162) The same procedure was carried out by replacing semiconductor nanoplatelets with organic nanoparticles, inorganic nanoparticles such as metal nanoparticles, halide nanoparticles, chalcogenide nanoparticles, phosphide nanoparticles, sulfide nanoparticles, metalloid nanoparticles, metallic alloy nanoparticles, phosphor nanoparticles, perovskite nanoparticles, ceramic nanoparticles such as for example oxide nanoparticles, carbide nanoparticles, nitride nanoparticles, or a mixture thereof.

(163) The same procedure was carried out by replacing HfO.sub.2 and/or SiO.sub.2 with ZnTe, Al.sub.2O.sub.3, SiO.sub.2, TiO.sub.2, HfO.sub.2, ZnSe, ZnO, ZnS, SiZrO.sub.2, SiHfO.sub.2 or MgO, or a mixture thereof. Reaction temperature of the above procedure is adapted according to the inorganic material chosen.

(164) The same procedure was carried out by replacing HfO.sub.2 and/or SiO.sub.2 with a metal material, halide material, chalcogenide material, phosphide material, sulfide material, metalloid material, metallic alloy material, ceramic material such as for example oxide, carbide, nitride, glass, enamel, ceramic, stone, precious stone, pigment, cement and/or inorganic polymer, or a mixture thereof. Reaction temperature of the above procedure is adapted according to the inorganic material chosen.

Example 17: Semiconductor Nanoplatelets @Al.SUB.2.O.SUB.3.@SiO.SUB.2

(165) Semiconductor nanoplatelets@Al.sub.2O.sub.3 particles are dispersed in 16.7 wt % H.sub.2O in an anhydrous ethanol to reach 5 wt. % solid loading and then ultrasonicated to break down agglomerates. A 20 wt. % of TEOS+silane in ethanol solution (quantity varied to tune SiO.sub.2 thickness) was carefully added to the suspension step by step. The amounts of added TEOS were calculated based on the surface area of semiconductor nanoplatelets@Al.sub.2O.sub.3 particle and the desired shell thickness, assuming complete conversion of TEOS to silica. The appropriate pH value of the suspension was adjusted using ammonia to pH=11. Afterward, the suspension was stirred at 50° C. for 6 h to control the thickness of the coating layer through the hydrolysis and condensation of TEOS on the surface of semiconductor nanoplatelets@Al.sub.2O.sub.3 particle. Resulting particles were then collected by centrifuged, washed with anhydrous ethanol and dried in an oven at 80° C.

(166) The same procedure was carried out by replacing semiconductor nanoplatelets with organic nanoparticles, inorganic nanoparticles such as metal nanoparticles, halide nanoparticles, chalcogenide nanoparticles, phosphide nanoparticles, sulfide nanoparticles, metalloid nanoparticles, metallic alloy nanoparticles, phosphor nanoparticles, perovskite nanoparticles, ceramic nanoparticles such as for example oxide nanoparticles, carbide nanoparticles, nitride nanoparticles, or a mixture thereof.

(167) The same procedure was carried out by replacing Al.sub.2O.sub.3 and/or SiO.sub.2 with ZnTe, Al.sub.2O.sub.3, SiO.sub.2, TiO.sub.2, HfO.sub.2, ZnSe, ZnO, ZnS, SiZrO.sub.2, SiHfO.sub.2 or MgO, or a mixture thereof. Reaction temperature of the above procedure is adapted according to the inorganic material chosen.

(168) The same procedure was carried out by replacing Al.sub.2O.sub.3 and/or SiO.sub.2 with a metal material, halide material, chalcogenide material, phosphide material, sulfide material, metalloid material, metallic alloy material, ceramic material such as for example oxide, carbide, nitride, glass, enamel, ceramic, stone, precious stone, pigment, cement and/or inorganic polymer, or a mixture thereof. Reaction temperature of the above procedure is adapted according to the inorganic material chosen.

Example 18: CdSe/CdZnS@HfO.SUB.2.@SiO.SUB.2

(169) 1st Step

(170) 100 μL of CdSe/CdZnS nanoplatelets suspended in heptane (10 mg/mL) were mixed with Hafnium n-butoxide and 5 mL of pentane, then loaded on a spray-drying set-up. On another side, a basic aqueous solution was prepared and loaded the same spray-drying set-up, but at a different location than the first heptane solution. The two liquids were sprayed simultaneously towards a tube furnace heated at a temperature ranging from the boiling point of the solvent to 1000° C. with a nitrogen flow. The resulting particles CdSe/CdZnS@HfO.sub.2 were collected at the surface of a filter.

(171) 2nd Step

(172) 50 mg of CdSe/CdZnS@HfO.sub.2 particles were suspended in 20 mL of water and mixed with TEOS and ammonia, then loaded on a spray-drying set-up. The liquid was sprayed towards a tube furnace heated at a temperature ranging from the boiling point of the solvent to 1000° C. with a nitrogen flow. The luminescent particles CdSe/CdZnS@HfO.sub.2@SiO.sub.2 were collected at the surface of a filter.

(173) FIGS. 17A and 17B show as-synthetized CdSe/CdZnS@HfO.sub.2@SiO.sub.2 particles.

(174) FIG. 17C show a TEM image of HfO.sub.2 particles, it is clear from that pictures that CdSe/CdZnS@HfO.sub.2 seen in FIGS. 17A and 17B have a morphology consistent with HfO.sub.2 particles.

(175) The same procedure was carried out by replacing CdSe/CdZnS nanoplatelets with CdSe, CdS, CdTe, CdSe/CdS, CdSe/ZnS, CdSe/CdZnS, CdS/ZnS, CdS/CdZnS, CdTe/ZnS, CdTe/CdZnS, CdSeS/ZnS, CdSeS/CdS, CdSeS/CdZnS, CuInS.sub.2/ZnS, CuInSe.sub.2/ZnS, InP/CdS, InP/ZnS, InZnP/ZnS, InP/ZnSeS, InP/ZnSe, InP/CdZnS, CdSe/CdZnS/ZnS, CdSe/ZnS/CdZnS, CdSe/CdS/ZnS, CdSe/CdS/CdZnS, CdSe/ZnSe/ZnS, CdSeS/CdS/ZnS, CdSeS/CdS/CdZnS, CdSeS/CdZnS/ZnS, CdSeS/ZnSe/ZnS, CdSeS/ZnSe/CdZnS, CdSeS/ZnS/CdZnS, CdSe/ZnS/CdS, CdSeS/ZnS/CdS, CdSe/ZnSe/CdZnS, InP/ZnSe/ZnS, InP/CdS/ZnSe/ZnS, InP/CdS/ZnS, InP/ZnS/CdS, InP/GaP/ZnS, InP/GaP/ZnSe, InP/CdZnS/ZnS, InP/ZnS/CdZnS, InP/CdS/CdZnS, InP/ZnSe/CdZnS, InP/ZnS/ZnSe, InP/GaP/ZnSe/ZnS, InP/ZnS/ZnSe/ZnS, nanoplatelets or quantum dots, or a mixture thereof.

(176) The same procedure was carried out by replacing CdSe/CdZnS nanoplatelets with organic nanoparticles, inorganic nanoparticles such as metal nanoparticles, halide nanoparticles, chalcogenide nanoparticles, phosphide nanoparticles, sulfide nanoparticles, metalloid nanoparticles, metallic alloy nanoparticles, phosphor nanoparticles, perovskite nanoparticles, ceramic nanoparticles such as for example oxide nanoparticles, carbide nanoparticles, nitride nanoparticles, or a mixture thereof.

(177) The same procedure was carried out by replacing SiO.sub.2 and/or HfO.sub.2 with ZnTe, Al.sub.2O.sub.3, SiO.sub.2, TiO.sub.2, HfO.sub.2, ZnSe, ZnO, ZnS, SiZrO.sub.2, SiHfO.sub.2 or MgO, or a mixture thereof. Reaction temperature of the above procedure is adapted according to the inorganic material chosen.

(178) The same procedure was carried out by replacing SiO.sub.2 and/or HfO.sub.2 with a metal material, halide material, chalcogenide material, phosphide material, sulfide material, metalloid material, metallic alloy material, ceramic material such as for example oxide, carbide, nitride, glass, enamel, ceramic, stone, precious stone, pigment, cement and/or inorganic polymer, or a mixture thereof. Reaction temperature of the above procedure is adapted according to the inorganic material chosen.

Example 19: Luminescent Particles Preparation from an Organometallic Precursor

(179) 100 μL of CdSe/CdZnS@HfO.sub.2 particles suspended in heptane were mixed with an organometallic precursor selected in the group below in pentane under controlled atmosphere, then loaded on a spray-drying set-up. On another side, an aqueous solution was prepared and loaded on the same spray-drying set-up, but at a different location than the first heptane solution. The two liquids were sprayed simultaneously towards a tube furnace heated from room temperature to 300° C. with a nitrogen flow. The particles were collected at the surface of a filter.

(180) The procedure was carried out with an organometallic precursor selected in the group comprising: Al[N(SiMe.sub.3).sub.2].sub.3, trimethyl aluminium, triisobutylaluminum, trioctylaluminum, triphenylaluminum, dimethyl aluminium, trimethyl zinc, dimethyl zinc, diethylzinc, Zn[(N(TMS).sub.2].sub.2, Zn[(CF.sub.3SO.sub.2).sub.2N].sub.2, Zn(Ph).sub.2, Zn(C.sub.6F.sub.5).sub.2, Zn(TMHD).sub.2 (β-diketonate), Hf[(C.sub.5H.sub.4(CH.sub.3)].sub.2(CH.sub.3).sub.2, HfCH.sub.3(OCH.sub.3)[C.sub.5H.sub.4(CH.sub.3)].sub.2, [[(CH.sub.3).sub.3Si].sub.2N].sub.2HfCl.sub.2, (C.sub.5H.sub.5).sub.2Hf(CH.sub.3).sub.2, [CH.sub.2CH.sub.3).sub.2N].sub.4Hf, [(CH.sub.3).sub.2N].sub.4Hf, [(CH.sub.3).sub.2N].sub.4Hf, [(CH.sub.3)(C.sub.2H.sub.5)N].sub.4Hf, [(CH.sub.3)(C.sub.2H.sub.5)N].sub.4Hf, 2,2′,6,6′-tetramethyl-3,5-heptanedione zirconium (Zr(THD).sub.4), C.sub.10H.sub.12Zr, Zr(CH.sub.3C.sub.5H.sub.4).sub.2CH.sub.3OCH.sub.3, C.sub.22H.sub.36Zr, [(C.sub.2H.sub.5).sub.2N].sub.4Zr, [(CH.sub.3).sub.2N].sub.4Zr, [(CH.sub.3).sub.2N].sub.4Zr, Zr(NCH.sub.3C.sub.2H.sub.5).sub.4, Zr(NCH.sub.3C.sub.2H.sub.5).sub.4, C.sub.18H.sub.32O.sub.6Zr, Zr(C.sub.8H.sub.15O.sub.2).sub.4, Zr(OCC(CH.sub.3).sub.3CHCOC(CH.sub.3).sub.3).sub.4, Mg(C.sub.5H.sub.5).sub.2, or C.sub.20H.sub.30Mg. Reaction temperature of the above procedure is adapted according to the organometallic precursor chosen.

(181) The same procedure was carried out by replacing CdSe/CdZnS nanoplatelets with CdSe, CdS, CdTe, CdSe/CdS, CdSe/ZnS, CdSe/CdZnS, CdS/ZnS, CdS/CdZnS, CdTe/ZnS, CdTe/CdZnS, CdSeS/ZnS, CdSeS/CdS, CdSeS/CdZnS, CuInS.sub.2/ZnS, CuInSe.sub.2/ZnS, InP/CdS, InP/ZnS, InZnP/ZnS, InP/ZnSeS, InP/ZnSe, InP/CdZnS, CdSe/CdZnS/ZnS, CdSe/ZnS/CdZnS, CdSe/CdS/ZnS, CdSe/CdS/CdZnS, CdSe/ZnSe/ZnS, CdSeS/CdS/ZnS, CdSeS/CdS/CdZnS, CdSeS/CdZnS/ZnS, CdSeS/ZnSe/ZnS, CdSeS/ZnSe/CdZnS, CdSeS/ZnS/CdZnS, CdSe/ZnS/CdS, CdSeS/ZnS/CdS, CdSe/ZnSe/CdZnS, InP/ZnSe/ZnS, InP/CdS/ZnSe/ZnS, InP/CdS/ZnS, InP/ZnS/CdS, InP/GaP/ZnS, InP/GaP/ZnSe, InP/CdZnS/ZnS, InP/ZnS/CdZnS, InP/CdS/CdZnS, InP/ZnSe/CdZnS, InP/ZnS/ZnSe, InP/GaP/ZnSe/ZnS, InP/ZnS/ZnSe/ZnS, nanoplatelets or quantum dots, or a mixture thereof.

(182) The same procedure was carried out by replacing CdSe/CdZnS nanoplatelets with organic nanoparticles, inorganic nanoparticles such as metal nanoparticles, halide nanoparticles, chalcogenide nanoparticles, phosphide nanoparticles, sulfide nanoparticles, metalloid nanoparticles, metallic alloy nanoparticles, phosphor nanoparticles, perovskite nanoparticles, ceramic nanoparticles such as for example oxide nanoparticles, carbide nanoparticles, nitride nanoparticles, or a mixture thereof.

(183) The same procedure was carried out by replacing HfO.sub.2 with ZnTe, Al.sub.2O.sub.3, SiO.sub.2, HfO.sub.2, ZnSe, TiO.sub.2, ZnO, ZnS, SiZrO.sub.2, SiHfO.sub.2 or MgO, or a mixture thereof. The same procedure was carried out by replacing HfO.sub.2 with a metal material, halide material, chalcogenide material, phosphide material, sulfide material, metalloid material, metallic alloy material, ceramic material such as for example oxide, carbide, nitride, glass, enamel, ceramic, stone, precious stone, pigment, cement and/or inorganic polymer, or a mixture thereof.

(184) The same procedure was carried out by replacing the aqueous solution with another liquid or vapor source of oxidation.

Example 20: Luminescent Particles Preparation from an Organometallic Precursor—CdSe/CdZnS@HfO.SUB.2.@ZnTe

(185) 100 μL of CdSe/CdZnS@HfO.sub.2 particles suspended in heptane were mixed with two organometallic precursors selected in the group below in pentane under inert atmosphere then loaded on a spray-drying set-up. The suspension was sprayed towards a tube furnace heated from RT to 300° C. with a nitrogen flow. The particles were collected at the surface of a filter.

(186) The procedure was carried out by with a first organometallic precursor selected in the group comprising: dimethyl telluride, diethyl telluride, diisopropyl telluride, di-t-butyl telluride, diallyl telluride, methyl allyl telluride, dimethyl selenide, or dimethyl sulfur. Reaction temperature of the above procedure is adapted according to the organometallic precursor chosen.

(187) The procedure was carried out by with a second organometallic precursor selected in the group comprising: dimethyl zinc, trimethyl zinc, diethylzinc, Zn[(N(TMS).sub.2].sub.2, Zn[(CF.sub.3SO.sub.2).sub.2N].sub.2, Zn(Ph).sub.2, Zn(C.sub.6F.sub.5).sub.2, or Zn(TMHD).sub.2 (β-diketonate). Reaction temperature of the above procedure is adapted according to the organometallic precursor chosen.

(188) The same procedure was carried out by replacing CdSe/CdZnS nanoplatelets with CdSe, CdS, CdTe, CdSe/CdS, CdSe/ZnS, CdSe/CdZnS, CdS/ZnS, CdS/CdZnS, CdTe/ZnS, CdTe/CdZnS, CdSeS/ZnS, CdSeS/CdS, CdSeS/CdZnS, CuInS2/ZnS, CuInSe2/ZnS, InP/CdS, InP/ZnS, InZnP/ZnS, InP/ZnSeS, InP/ZnSe, InP/CdZnS, CdSe/CdZnS/ZnS, CdSe/ZnS/CdZnS, CdSe/CdS/ZnS, CdSe/CdS/CdZnS, CdSe/ZnSe/ZnS, CdSeS/CdS/ZnS, CdSeS/CdS/CdZnS, CdSeS/CdZnS/ZnS, CdSeS/ZnSe/ZnS, CdSeS/ZnSe/CdZnS, CdSeS/ZnS/CdZnS, CdSe/ZnS/CdS, CdSeS/ZnS/CdS, CdSe/ZnSe/CdZnS, InP/ZnSe/ZnS, InP/CdS/ZnSe/ZnS, InP/CdS/ZnS, InP/ZnS/CdS, InP/GaP/ZnS, InP/GaP/ZnSe, InP/CdZnS/ZnS, InP/ZnS/CdZnS, InP/CdS/CdZnS, InP/ZnSe/CdZnS, InP/ZnS/ZnSe, InP/GaP/ZnSe/ZnS, InP/ZnS/ZnSe/ZnS, nanoplatelets or quantum dots, or a mixture thereof.

(189) The same procedure was carried out by replacing CdSe/CdZnS nanoplatelets with organic nanoparticles, inorganic nanoparticles such as metal nanoparticles, halide nanoparticles, chalcogenide nanoparticles, phosphide nanoparticles, sulfide nanoparticles, metalloid nanoparticles, metallic alloy nanoparticles, phosphor nanoparticles, perovskite nanoparticles, ceramic nanoparticles such as for example oxide nanoparticles, carbide nanoparticles, nitride nanoparticles, or a mixture thereof.

(190) The same procedure was carried out by replacing ZnTe with ZnS or ZnSe, or a mixture thereof.

(191) The same procedure was carried out by replacing HfO.sub.2 with ZnTe, Al.sub.2O.sub.3, SiO.sub.2, HfO.sub.2, ZnSe, TiO.sub.2, ZnO, ZnS, SiZrO.sub.2, SiHfO.sub.2 or MgO, or a mixture thereof. The same procedure was carried out by replacing HfO.sub.2 with a metal material, halide material, chalcogenide material, phosphide material, sulfide material, metalloid material, metallic alloy material, ceramic material such as for example oxide, carbide, nitride, glass, enamel, ceramic, stone, precious stone, pigment, cement and/or inorganic polymer, or a mixture thereof.

(192) The same procedure was carried out by replacing the aqueous solution with another liquid or vapor source of oxidation.

Example 21: Luminescent Particles Preparation from an Organometallic Precursor—CdSe/CdZnS@HfO.SUB.2.@ZnS

(193) 100 μL of CdSe/CdZnS@HfO.sub.2 particles suspended in heptane were mixed with an organometallic precursor selected in the group below in pentane under inert atmosphere, then loaded on a spray-drying set-up. On another side, a vapor source of H.sub.2S was inserted in the same spray-drying set-up. The suspension was sprayed towards a tube furnace heated from RT to 300° C. with a nitrogen flow. The particles were collected at the surface of a filter.

(194) The procedure was carried out with an organometallic precursor selected in the group comprising: dimethyl zinc, trimethyl zinc, diethylzinc, Zn[(N(TMS).sub.2].sub.2, Zn[(CF.sub.3SO.sub.2).sub.2N].sub.2, Zn(Ph).sub.2, Zn(C.sub.6F.sub.5).sub.2, Zn(TMHD).sub.2 (β-diketonate). Reaction temperature of the above procedure is adapted according to the organometallic precursor chosen.

(195) The same procedure was carried out by replacing CdSe/CdZnS nanoplatelets with CdSe, CdS, CdTe, CdSe/CdS, CdSe/ZnS, CdSe/CdZnS, CdS/ZnS, CdS/CdZnS, CdTe/ZnS, CdTe/CdZnS, CdSeS/ZnS, CdSeS/CdS, CdSeS/CdZnS, CuInS.sub.2/ZnS, CuInSe.sub.2/ZnS, InP/CdS, InP/ZnS, InZnP/ZnS, InP/ZnSeS, InP/ZnSe, InP/CdZnS, CdSe/CdZnS/ZnS, CdSe/ZnS/CdZnS, CdSe/CdS/ZnS, CdSe/CdS/CdZnS, CdSe/ZnSe/ZnS, CdSeS/CdS/ZnS, CdSeS/CdS/CdZnS, CdSeS/CdZnS/ZnS, CdSeS/ZnSe/ZnS, CdSeS/ZnSe/CdZnS, CdSeS/ZnS/CdZnS, CdSe/ZnS/CdS, CdSeS/ZnS/CdS, CdSe/ZnSe/CdZnS, InP/ZnSe/ZnS, InP/CdS/ZnSe/ZnS, InP/CdS/ZnS, InP/ZnS/CdS, InP/GaP/ZnS, InP/GaP/ZnSe, InP/CdZnS/ZnS, InP/ZnS/CdZnS, InP/CdS/CdZnS, InP/ZnSe/CdZnS, InP/ZnS/ZnSe, InP/GaP/ZnSe/ZnS, InP/ZnS/ZnSe/ZnS, nanoplatelets or quantum dots, or a mixture thereof.

(196) The same procedure was carried out by replacing CdSe/CdZnS nanoplatelets with organic nanoparticles, inorganic nanoparticles such as metal nanoparticles, halide nanoparticles, chalcogenide nanoparticles, phosphide nanoparticles, sulfide nanoparticles, metalloid nanoparticles, metallic alloy nanoparticles, phosphor nanoparticles, perovskite nanoparticles, ceramic nanoparticles such as for example oxide nanoparticles, carbide nanoparticles, nitride nanoparticles, or a mixture thereof.

(197) The same procedure was carried out by replacing ZnS with ZnSe or ZnTe, or a mixture thereof.

(198) The same procedure was carried out by replacing HfO.sub.2 with ZnTe, Al.sub.2O.sub.3, HfO.sub.2, ZnSe, TiO.sub.2, ZnO, ZnS, SiZrO.sub.2, SiHfO.sub.2 or MgO, or a mixture thereof. The same procedure was carried out by replacing HfO.sub.2 with a metal material, halide material, chalcogenide material, phosphide material, sulfide material, metalloid material, metallic alloy material, ceramic material such as for example oxide, carbide, nitride, glass, enamel, ceramic, stone, precious stone, pigment, cement and/or inorganic polymer, or a mixture thereof.

(199) The same procedure was carried out by replacing the aqueous solution with another liquid or vapor source of oxidation.

(200) The same procedure was carried out by replacing H.sub.2S with H.sub.2Se, H.sub.2Te or other gas.

Example 22: Dispersion of Luminescent Particles in a Silicone and Deposition Onto a LED

(201) Luminescent particles as-prepared in the examples hereabove, and containing fluorescent nanoparticles, were dispersed in a polymer of silicone, with a mass concentration of 20%. The obtained material was deposited onto a LED of InGaN before annealing at 150° C. for 2 hours. The LED was then turned on to get a mixture of blue light and the light emitted by the fluorescent nanoparticles.

(202) The same procedure was carried out by replacing silicone with ZnO, PMMA, Polystyrene, Al.sub.2O.sub.3, TiO.sub.2, HfO.sub.2 or ZrO.sub.2, or a mixture thereof.

Example 23: Dispersion of Luminescent Particles in a ZnO Matrix and Deposition Onto a LED

(203) Luminescent particles as-prepared in the examples hereabove, and containing fluorescent nanoparticles, were dispersed in a ZnO matrix prepared by a sol-gel method. The material was then deposited onto a glass substrate by spin-coating and annealed at 100° C. for 24 hours. The glass substrate was then illuminated by a blue laser to get a mixture of blue light and the light emitted by the fluorescent nanoparticles.

(204) The same procedure was carried out by replacing ZnO with a resin, silicone, PMMA, Polystyrene, Al.sub.2O.sub.3, TiO.sub.2, HfO.sub.2 or ZrO.sub.2, or a mixture thereof.

Example 24: Color Conversion Layer Preparation

(205) Blue emitting luminescent particles as-prepared in the examples hereabove, green emitting luminescent particles as-prepared in the examples hereabove, and red emitting luminescent particles as-prepared in the examples hereabove were dispersed separately in silicone and deposited onto a support, such that each film of luminescent particles was around 1-10 μm in thickness. The support was then annealed at 180° C. for 2 hours before it was introduced in the display apparatus described in the invention. The resulting lights were blue, green and red depending on the luminescent particles illuminated with the UV light from a light source.

(206) The same procedure was carried out by replacing silicone with a resin, ZnO, MgO, PMMA, Polystyrene, Al.sub.2O.sub.3, TiO.sub.2, HfO.sub.2 or ZrO.sub.2, or a mixture thereof.

(207) The same procedure was carried out with luminescent particles prepared in the examples hereabove.

(208) The same procedure was carried out using inkjet printing; or traditional lithography.

(209) With traditional lithography: the entire surface was coated with blue emitting luminescent particles, followed by the subtractive photolithography patterning process. The process is then repeated for the red emitting luminescent particles and for the green emitting luminescent particles.

Example 25: Color Conversion Layer Preparation

(210) Green emitting core-shell CdSeS/CdZnS nanoplatelets and red emitting core-shell CdSe/CdZnS nanoplatelets were dispersed separately in silicone and deposited onto a support, such that each film of luminescent particles was around 1-10 μm in thickness. The support was then annealed at 180° C. for 2 hours before it was introduced in the display apparatus described in the invention. The resulting lights were green and red depending on the luminescent particles illuminated with the blue light from a light source.

(211) The same procedure was carried out by replacing silicone with a resin, ZnO, MgO, PMMA, Polystyrene, Al.sub.2O.sub.3, TiO.sub.2, HfO.sub.2 or ZrO.sub.2, or a mixture thereof.

(212) The same procedure was carried out with luminescent particles prepared in the examples hereabove.

(213) The same procedure was carried out using inkjet printing; or traditional lithography.

(214) With traditional lithography: the entire surface was coated with blue emitting luminescent particles, followed by the subtractive photolithography patterning process. The process is then repeated for the red emitting luminescent particles and for the green emitting luminescent particles.

Example 26: Color Conversion Layer Preparation

(215) Green emitting luminescent particles as-prepared in the examples hereabove, and red emitting luminescent particles as-prepared in the examples hereabove were dispersed separately in a zinc oxide matrix and deposited onto a support, such that each film of luminescent particles was around 1-10 μm in thickness. The support was then annealed at 180° C. for 2 hours before it was introduced in the display apparatus described in the invention. The resulting lights were green and red depending on the luminescent particles illuminated with the blue light from a light source.

(216) The same procedure was carried out by replacing ZnO with a resin, silicone, MgO, PMMA, Polystyrene, Al.sub.2O.sub.3, TiO.sub.2, HfO.sub.2 or ZrO.sub.2, or a mixture thereof.

(217) The same procedure was carried out with luminescent particles prepared in the examples hereabove.

(218) The same procedure was carried out using inkjet printing; or traditional lithography.

(219) With traditional lithography: the entire surface was coated with blue emitting luminescent particles, followed by the subtractive photolithography patterning process. The process is then repeated for the red emitting luminescent particles and for the green emitting luminescent particles.

Example 27: Color Conversion Layer Preparation

(220) Green emitting luminescent particles as-prepared in the examples hereabove, and red emitting luminescent particles as-prepared in the examples hereabove were dispersed separately in silicone and deposited onto a support, such that each film of luminescent particles was around 1-10 μm μm in thickness. The support was then annealed at 180° C. for 2 hours before it was introduced in the display apparatus described in the invention. The resulting lights were green and red depending on the luminescent particles illuminated with the blue light from a light source.

(221) The same procedure was carried out by replacing silicone with a resin, ZnO, PMMA, MgO, Polystyrene, Al.sub.2O.sub.3, TiO.sub.2, HfO.sub.2 or ZrO.sub.2, or a mixture thereof.

(222) The same procedure was carried out with luminescent particles prepared in the examples hereabove.

(223) The same procedure was carried out using inkjet printing; or traditional lithography.

(224) With traditional lithography: the entire surface was coated with blue emitting luminescent particles, followed by the subtractive photolithography patterning process. The process is then repeated for the red emitting luminescent particles and for the green emitting luminescent particles.

Example 28: Color Conversion Layer Preparation

(225) Green emitting luminescent particles as-prepared in the examples hereabove, and red emitting luminescent particles as-prepared in the examples hereabove were dispersed separately in silicone and deposited onto a support, such that each film of luminescent particles was around 1-10 μm in thickness. The support was then annealed at 180° C. for 2 hours before it was introduced in the display apparatus described in the invention. The resulting lights were green and red depending on the luminescent particles illuminated with the blue light from a light source.

(226) The same procedure was carried out by replacing silicone with a resin, ZnO, PMMA, MgO, Polystyrene, Al.sub.2O.sub.3, TiO.sub.2, HfO.sub.2 or ZrO.sub.2, or a mixture thereof.

(227) The same procedure was carried out with luminescent particles prepared in the examples hereabove.

(228) The same procedure was carried out using inkjet printing; or traditional lithography.

(229) With traditional lithography: the entire surface was coated with blue emitting luminescent particles, followed by the subtractive photolithography patterning process. The process is then repeated for the red emitting luminescent particles and for the green emitting luminescent particles.

Example 29: Color Conversion Layer Preparation

(230) Green emitting luminescent particles as-prepared in the examples hereabove, and red emitting c luminescent particles as-prepared in the examples hereabove were dispersed separately in a resin matrix and deposited onto a support, such that each film of luminescent particles was around 1-10 μm in thickness. The support was then annealed at 180° C. for 3 hours before it was introduced in the display apparatus described in the invention. The resulting lights were green and red depending on the luminescent particles illuminated with the blue light from a light source.

(231) The same procedure was carried out by replacing the resin with silicone, ZnO, MgO, PMMA, Polystyrene, Al.sub.2O.sub.3, TiO.sub.2, HfO.sub.2 or ZrO.sub.2, or a mixture thereof.

(232) The same procedure was carried out with luminescent particles prepared in the examples hereabove.

(233) The same procedure was carried out using inkjet printing; or traditional lithography.

(234) With traditional lithography: the entire surface was coated with blue emitting luminescent particles, followed by the subtractive photolithography patterning process. The process is then repeated for the red emitting luminescent particles and for the green emitting luminescent particles.

Example 30: Color Conversion Layer Preparation

(235) Green emitting luminescent particles as-prepared in the examples hereabove and red emitting luminescent particles as-prepared in the examples hereabove were dispersed separately in silicone and deposited onto a support, such that each film of luminescent particles was around 1-10 μm in thickness. The support was then annealed at 180° C. for 2 hours before it was introduced in the display apparatus described in the invention. The resulting lights were green and red depending on the luminescent particles illuminated with the blue light from a light source.

(236) The same procedure was carried out by replacing silicone with a resin, ZnO, MgO, PMMA, Polystyrene, Al.sub.2O.sub.3, TiO.sub.2, HfO.sub.2 or ZrO.sub.2, or a mixture thereof.

(237) The same procedure was carried out with luminescent particles prepared in the examples hereabove.

(238) The same procedure was carried out using inkjet printing; or traditional lithography.

(239) With traditional lithography: the entire surface was coated with blue emitting luminescent particles, followed by the subtractive photolithography patterning process. The process is then repeated for the red emitting luminescent particles and for the green emitting luminescent particles.

Example 31: Color Conversion Layer Preparation

(240) Green emitting luminescent particles as-prepared in the examples hereabove and red emitting luminescent particles as-prepared in the examples hereabove were dispersed separately in a MgO matrix and deposited onto a support, such that each film of luminescent particles was around 1-10 μm in thickness. The support was then annealed at 180° C. for 2 hours before it was introduced in the display apparatus described in the invention. The resulting lights were green and red depending on the luminescent particles illuminated with the blue light from a light source.

(241) The same procedure was carried out by replacing MgO with a resin, ZnO, silicone, PMMA, Polystyrene, Al.sub.2O.sub.3, TiO.sub.2, HfO.sub.2 or ZrO.sub.2, or a mixture thereof.

(242) The same procedure was carried out with luminescent particles prepared in the examples hereabove.

(243) The same procedure was carried out using inkjet printing; or traditional lithography: the entire surface was coated with blue emitting luminescent particles, followed by the subtractive photolithography patterning process. The process is then repeated for the red emitting luminescent particles and for the green emitting luminescent particles.

(244) The same procedure was carried out using inkjet printing.

Example 32: Color Conversion Layer Preparation

(245) Blue emitting luminescent particles as-prepared in the examples hereabove, green emitting luminescent particles as-prepared in the examples hereabove, and red emitting luminescent particles as-prepared in the examples hereabove were dispersed separately in silicone and successively deposited onto an optically transparent rotating wheel with a ring shape, such that the film of luminescent particles is around 50-150 μm in thickness and were equally distributed in three zones along the ring to obtain one zone coated with green emitting luminescent particles, one zone coated with blue emitting luminescent particles and one zone coated with red emitting luminescent particles. The rotating wheel was then annealed at 150° C. for 2 hours before it was introduced in the display apparatus described in the invention, wherein a UV laser source was used as excitation source. The resulting lights were blue, green and red depending on the zone illuminated with the UV light form the laser source.

(246) The same procedure was carried out by replacing silicone with a resin, ZnO, MgO, PMMA, Polystyrene, Al.sub.2O.sub.3, TiO.sub.2, HfO.sub.2 or ZrO.sub.2, or a mixture thereof.

(247) The same procedure was carried out with luminescent particles prepared in the examples hereabove.

Example 33: Color Conversion Layer Preparation

(248) Green emitting core-shell CdSeS/CdZnS nanoplatelets and red emitting core-shell CdSe/CdZnS nanoplatelets were dispersed separately in silicone and successively deposited onto an optically transparent rotating wheel with a ring shape, such that the film of luminescent particles is around 50-150 μm in thickness and were equally distributed in three zones along the ring, to obtain one zone not coated, one zone coated with green emitting core-shell CdSe/CdZnS nanoplatelets and one zone coated with red emitting core-shell CdSe/CdZnS nanoplatelets. The rotating wheel was then annealed at 150° C. for 2 hours before it was introduced in the display apparatus described in the invention, where a blue laser source was used as excitation source. The resulting lights were blue, green and red depending on the zone illuminated with the blue light form the laser source.

(249) The same procedure was carried out by replacing silicone with a resin, ZnO, MgO, PMMA, Polystyrene, Al.sub.2O.sub.3, TiO.sub.2, HfO.sub.2 or ZrO.sub.2, or a mixture thereof.

(250) The same procedure was carried out with luminescent particles prepared in the examples hereabove.

Example 34: Color Conversion Layer Preparation

(251) Green emitting luminescent particles as-prepared in the examples hereabove, and red emitting luminescent particles as-prepared in the examples hereabove were dispersed separately in a zinc oxide matrix and successively deposited onto an optically transparent rotating wheel with a ring shape, such that the film of luminescent particles is around 50-150 μm in thickness and were equally distributed in three zones along the ring, to obtain one zone not coated, one zone coated with green emitting luminescent particles and one zone coated with red emitting luminescent particles. The rotating wheel was then annealed at 150° C. for 2 hours before it was introduced in the display apparatus described in the invention, where a blue laser source was used as excitation source. The resulting lights were blue, green and red depending on the zone illuminated with the blue light form the laser source.

(252) The same procedure was carried out by replacing ZnO with a resin, silicone, MgO, PMMA, Polystyrene, Al.sub.2O.sub.3, TiO.sub.2, HfO.sub.2 or ZrO.sub.2, or a mixture thereof.

(253) The same procedure was carried out with luminescent particles prepared in the examples hereabove.

Example 35: Color Conversion Layer Preparation

(254) Green emitting luminescent particles as-prepared in the examples hereabove, and red emitting luminescent particles as-prepared in the examples hereabove were dispersed separately in a resin matrix and successively deposited onto an optically transparent rotating wheel with a ring shape, such that the film of luminescent particles is around 50-150 μm in thickness and were equally distributed in three zones along the ring, to obtain one zone not coated, one zone coated with green emitting luminescent particles and one zone coated with red emitting luminescent particles. The rotating wheel was then annealed at 150° C. for 2 hours before it was introduced in the display apparatus described in the invention, where a blue laser source was used as excitation source. The resulting lights were blue, green and red depending on the zone illuminated with the blue light form the laser source.

(255) The same procedure was carried out by replacing the resin with silicone, ZnO, MgO, PMMA, Polystyrene, Al.sub.2O.sub.3, TiO.sub.2, HfO.sub.2 or ZrO.sub.2, or a mixture thereof.

(256) The same procedure was carried out with luminescent particles prepared in the examples hereabove.

Example 36: Color Conversion Layer Preparation

(257) Green emitting luminescent particles as-prepared in the examples hereabove, yellow emitting luminescent particles as-prepared in the examples hereabove, orange emitting luminescent particles as-prepared in the examples hereabove, and red emitting luminescent particles as-prepared in the examples hereabove were dispersed separately in silicone and deposited onto an optically transparent rotating wheel with a ring shape, such that the film of luminescent particles is around 50-150 μm in thickness and were equally distributed in five zones along the ring, to obtain one zone not coated, one zone coated with green emitting luminescent particles, one zone coated with yellow emitting luminescent particles, one zone coated with orange emitting luminescent particles and one zone coated with red emitting luminescent particles. The rotating wheel was then annealed at 150° C. for 2 hours before it was introduced in the display apparatus described in the invention, where a blue laser source was used as excitation source. The resulting lights were blue, green, yellow, orange and red depending on the zone illuminated with the blue light form the laser source.

(258) The same procedure was carried out by replacing silicone with a resin, ZnO, MgO, PMMA, Polystyrene, Al.sub.2O.sub.3, TiO.sub.2, HfO.sub.2 or ZrO.sub.2, or a mixture thereof.

(259) The same procedure was carried out with luminescent particles prepared in the examples hereabove.

REFERENCES

(260) 1—Luminescent particle

(261) 11—First material

(262) 12—Core of the luminescent particle

(263) 13—Shell of the luminescent particle

(264) 14—Inorganic material

(265) 2—Particle

(266) 21—Second material

(267) 22—Core of the particle 2

(268) 23—Shell of the particle 2

(269) 3—Nanoparticle

(270) 31—Spherical Nanoparticle

(271) 32—2D nanoparticle

(272) 33—Core of a nanoparticle

(273) 34—First shell of a nanoparticle

(274) 35—Second shell of a nanoparticle

(275) 36—Insulator shell of a nanoparticle

(276) 37—Crown of a nanoparticle

(277) 4—LED support

(278) 5—LED chip

(279) 6—Microsized LED

(280) 61—Display apparatus

(281) 6111—Light source

(282) 61111—Possible colored light paths

(283) 6112—Laser source

(284) 61121—Laser path

(285) 61122—Possible laser path

(286) 6121—Glass substrate

(287) 6122—Bottom substrate

(288) 6123—Solid support

(289) 6131—Layer of liquid crystal material

(290) 6132—Active matrix

(291) 6141—Polarizer

(292) 6142—Optical enhancement film

(293) 6143—Directing optical system

(294) 62—Illumination source

(295) 621—Light guide

(296) 622—Space

(297) 623—Reflector

(298) 624—Substrate

(299) 625—Color Filter

(300) 63—Rotating wheel comprising at least a zone comprising a color conversion layer

(301) 631—Possible light path of primary light from the light source

(302) 632—Possible light paths of secondary or primary light

(303) 634—Optical component

(304) 635—Modulating optical system

(305) 636—Possible path of the formed image

(306) 637—Screen

(307) 638—Digital micromirror device

(308) 6381—Microscopic mirror of the digital micromirror device

(309) 6382—Microscopic mirror of the digital micromirror device free of light emitting material, empty or optically transparent

(310) 6383—Support of a microscopic mirror

(311) 6391—Wavelength splitter system

(312) 6392—Wavelength combiner system

(313) 6384—Mirror

(314) 7—Light emitting material

(315) 71—Host material

(316) 72—Surrounding medium

(317) 73—Color conversion layer

(318) 8—Bead

(319) 81—Third material

(320) 9—Dense particle

(321) d—Sub-pixel pitch

(322) D—Pixel pitch

(323) G—Green secondary light

(324) R—Red secondary light