Pulling control device for single crystal ingot growth and pulling control method applied thereto

Abstract

The present invention relates to a pulling control device for growing a single crystal ingot capable of controlling an eccentricity of a single crystal ingot by varying a seed rotation number in real time, and a pulling control method applied thereto. According to the present invention, a pulling control device for growing a single crystal ingot and a pulling control method applied thereto may minimize that a seed rotation number (f) is set to a specific rotation number (fo) causing a resonance phenomenon of a melt by providing a target seed output rotation number (T_f.sub.out) that varies in real time so as to match a rotation form for each length of an ingot according to inputting a target seed input rotation number (T_f.sub.in) and controlling a rotation number (f) of a seed cable, and it is possible to prevent fluctuation of the melt and an eccentricity phenomenon of the ingot.

Claims

1. A pulling control device for growing a single crystal ingot, the device comprising: a pulling drive unit configured to rotate and pull up a seed cable connected to a seed dipped in a silicon melt; and a pulling control unit configured to output a target seed output rotation number (T_f.sub.out) that varies in real time so as to match a rotation form for each length of an ingot according to inputting a preset target seed input rotation number (T_f.sub.in), and control a rotation number (f) of the pulling drive unit according to the target seed output rotation number (T_f.sub.out), wherein the pulling control unit comprises: a determination part configured to determine whether or not the rotation form for each length of the ingot is constant according to the inputting of the preset target seed input rotation number (T_f.sub.in), a calculation part configured to calculate the target seed output rotation number (T_f.sub.out) in a functional form according to a determination result of the determination part, and an output part configured to output the target seed output rotation number (T_f.sub.out) to the pulling drive unit according to a calculation result of the calculation part.

2. The device of claim 1, wherein the calculation part calculates the target seed output rotation number (T_f.sub.out) into a sin function when the rotation form is constant for each length of the ingot in the determination result of the determination part.

3. The device of claim 2, wherein the calculation part calculates the target seed output rotation number (T_f.sub.out) such that an average value of the sin function coincides with the target seed input rotation number (T_f.sub.in).

4. The device of claim 1, wherein the calculation part calculates the target seed output rotation number (T_f.sub.out) into a linear function when the rotation form changes for each length of the ingot in the determination result of the determination part.

5. The device of claim 4, wherein the calculation part calculates the target seed output rotation number (T_f.sub.out) such that the linear function has a gradient that constantly decreases from a maximum value (max) to a minimum value (min) of the target seed input rotation number (T_f.sub.in).

6. A pulling control method for growing a single crystal ingot, the method comprising: a pulling drive operation of rotating and pulling up a seed cable connected to a seed dipped in a silicon melt; and a pulling control operation of outputting a target seed output rotation number (T_f.sub.out) that varies in real time so as to match a rotation form for each length of an ingot according to inputting a preset target seed input rotation number (T_f.sub.in), and controlling a rotation number (f) of the seed cable according to the target seed output rotation number (T_f.sub.out), wherein the pulling control operation comprises: a determining process of determining whether or not the rotation form for each length of the ingot is constant according to the inputting of the preset target seed input rotation number (T_f.sub.in), a calculation process of calculating the target seed output rotation number (T_f.sub.out) in a functional form according to a determination result of the determining process, and an outputting process of outputting the target seed output rotation number (T_f.sub.out) according to a calculation result of the calculation process and controlling the rotation number (f) of the seed cable.

7. The method of claim 6, wherein the calculation process calculates the target seed output rotation number (T_f.sub.out) into a sin function when the rotation form for each length of the ingot is constant in the determination result of the determining process.

8. The method of claim 7, wherein the calculation process calculates the target seed output rotation number (T_f.sub.out) such that an average value of the sin function coincides with the target seed input rotation number (T_f.sub.in).

9. The method of claim 6, wherein the calculation process calculates the target seed output rotation number (T_f.sub.out) into a linear function when the rotation form changes for each length of the ingot in the determination result of the determining process.

10. The method of claim 9, wherein the calculation process calculates the target seed output rotation number (T_f.sub.out) such that the linear function has a gradient that constantly decreases from a maximum value (max) to a minimum value (min) of the target seed input rotation number (T_f.sub.in).

Description

BRIEF DESCRIPTION OF THE DRAWINGS

(1) FIG. 1 is a configuration diagram illustrating a pulling control device for growing a single crystal ingot according to the present invention.

(2) FIGS. 2 and 3 are graphs illustrating a rotation number input/output to/from a pulling control unit applied to FIG. 1.

(3) FIG. 4 is a flowchart illustrating a pulling control method for growing a single crystal ingot according to the present invention.

(4) FIG. 5 is a graph illustrating an eccentric state and a diameter state of a single crystal ingot manufactured according to the related art and the present invention, respectively.

DETAILED DESCRIPTION OF THE EMBODIMENTS

(5) Hereinafter, embodiments will be described in detail with reference to the accompanying drawings. However, the scope of the spirit of the present invention may be determined from the matters disclosed in the embodiments, and the spirit of the present invention of the embodiments includes practical modifications such as addition, deletion, modification, and the like of components to the following proposed embodiments.

(6) FIG. 1 is a configuration diagram illustrating a pulling control device for growing a single crystal ingot according to the present invention, and FIGS. 2 and 3 are graphs illustrating a rotation number input/output to/from a pulling control unit applied to FIG. 1.

(7) The pulling control device for growing a single crystal ingot according to the present invention, as shown in FIG. 1, includes a pulling drive unit 110 configured to rotate and pull up a seed cable 111 connected to a seed chuck to which a seed crystal is hung, and a pulling control unit 120 configured to control so as to vary in real time a rotation number (f) of the pulling drive unit 110, wherein the pulling control unit 120 controls the rotation number (f) of the pulling drive unit 110 by outputting a target seed output rotation number (T_f.sub.out) configured to match a rotation form for each length of an ingot according to inputting a preset target seed input rotation number (T_f.sub.in).

(8) In general, a single crystal ingot growth device 100 is configured so as to dip a seed crystal hung to the seed cable 111 in a silicon melt accommodated in a crucible (not shown), and rotate and pull up the seed cable 111 to grow a single crystal ingot.

(9) The pulling drive unit 110 is a device configured to drive a drum (not shown) around which the seed cable 111 is wound, and may control a rotation number (f) and a pulling speed (P/S) of the seed cable 111.

(10) Of course, since the pulling drive unit 110 is a disclosed technology and may be variously configured, detailed description will be omitted.

(11) The pulling control unit 120 may include a determination part 121 configured to determine the rotation form for each length of the ingot according to the preset target seed input rotation number (T_f.sub.in), a calculation part 122 configured to calculate so as to vary in real time the target seed output rotation number (T_f.sub.out) into a separate functional form according to a determination result of the determination part 121, and an output part 123 configured to output the target seed output rotation number (T_f.sub.out) to the pulling drive unit 110 according to a calculation result of the calculation part 122.

(12) The determination part 121 receives the preset target seed input rotation number (T_f.sub.in), and in view of the characteristics of a single crystal ingot growth process, receives the target seed input rotation number (T_f.sub.in) with a constant value or receives in a form that maintains a constant value and decreases to a constant gradient.

(13) According to an embodiment, when the target seed input rotation number (T_f.sub.in) is maintained at a constant value as shown in FIG. 2, the determination part 121 determines that the rotation form for each length of the ingot is constant, but when the target seed input rotation number (T_f.sub.in) maintains a constant value and then decreases to a constant gradient as shown in FIG. 3, the determination part 121 determines that the rotation form for each length of the ingot has changed.

(14) The calculation part 122 calculates the target seed output rotation number (T_f.sub.out) so as to be varied in real time in a form of a sin function or a linear function according to the rotation form for each length of the ingot in the determination result of the determination part 121.

(15) According to an embodiment, when the rotation form for each length of the ingot is constant in the determination result of the determination part 121, the calculation part 122 calculates the target seed output rotation number (T_f.sub.out) into a sin function of which an average value coincides with the target seed input rotation number (T_f.sub.in) as shown in FIG. 2, but when the rotation form changes for each length of the ingot in the determination result of the determination part 121, the calculation part 122 calculates the target seed output rotation number (T_f.sub.out) into a linear function that decreases with a constant gradient from a maximum value (max) to a minimum value (min) of the target seed input rotation number (T_f.sub.in) as shown in FIG. 3.

(16) As described above, the target seed output rotation number (T_f.sub.out) varied in real time is provided to the pulling drive unit 110 by the output part 123, and it is possible to prevent the seed rotation number (f) from being set to a specific rotation number (fo) causing the resonance phenomenon of a melt by varying the rotation number (f) of the seed cable 111 in real time.

(17) FIG. 4 is a flowchart illustrating a pulling control method for growing a single crystal ingot according to the present invention.

(18) First, a single crystal ingot is grown by rotating a seed cable at a set rotation number. (see S1)

(19) According to an embodiment, a seed crystal hung to the seed cable is dipped in a silicon melt accommodated in a crucible, and a single crystal ingot grows from the silicon melt by pulling up while gradually rotating the seed cable.

(20) Of course, a seed rotation number (f) is determined by a rotation number (f) of the seed cable, and as the seed rotation number is slower, a diameter of the single crystal ingot may be formed larger.

(21) Next, when a target seed input rotation number (T_f.sub.in) is input, the rotation form for each length of the ingot is determined. (see S2, S3)

(22) According to an embodiment, when a body growing process proceeds, since the seed rotation number (f) should be maintained at a constant value, the target seed input rotation number (T_f.sub.in) is also input at a constant value.

(23) On the other hand, when a shouldering process is proceeded from a necking process, since the seed rotation number (f) should be maintained at a constant value and then decreased to a constant gradient, the target seed input rotation number (T_f.sub.in) is also input in a form that is maintained at a constant value and then decreases to a constant gradient.

(24) Accordingly, when the target seed input rotation number (T_f.sub.in) is input with a constant value, it is determined that the rotation form for each length of the ingot is constant, but when the target seed input rotation number (T_f.sub.in) is also input in a form that is maintained at a constant value and then decreases to a constant gradient, it is determined that the rotation form for each length of the ingot has changed.

(25) Next, when the rotation form for each length of the ingot is constant, a target seed output rotation number (T_f.sub.out) is calculated into a sin function, whereas, when the rotation form for each length of the ingot changes, the target seed output rotation number (T_f.sub.out) is calculated into a linear function. (see S4, S5)

(26) According to an embodiment, a target seed output rotation number (T_f.sub.out=f(x)) expressed by a sin function is set to a predetermined amplitude (A), a cycle (wt), and a variation value (B) on the basis of a target seed input rotation number (T_f.sub.in), and is determined by the following Equation 1.
f(x)=A sin(wt)+B  [Equation 1]

(27) For example, when the target seed input rotation number (T_f.sub.in) is input at 10 rpm, the target seed output rotation number (T_f.sub.out) may be calculated in the form of a sin function in which the amplitude (A) is set to 10 rpm±0.5 rpm and the cycle (wt) is set to 100 to 500 mm.

(28) Of course, as a cycle is shorter, eccentricity control effect of a single crystal ingot is higher, but since it may affect a pulling speed and induce a dislocation phenomenon, it is preferable that a range is set within an appropriate range.

(29) According to an embodiment, a target seed output rotation number (T_f.sub.out) expressed in a linear function is calculated by obtaining the maximum value (max) and the minimum value (min) of a target seed input rotation number (T_f.sub.in), and then is applied by calculating a reduction amount for each length of a single crystal ingot.

(30) The rotation number (f) of the seed cable is controlled according to the target seed output rotation number (T_f.sub.out) calculated as described above. (see S6)

(31) Accordingly, since the target seed output rotation number (T_f.sub.out) is varied in real time for each length of the ingot, it is possible to prevent the seed rotation number (f) from being set to a specific rotation number (fo) causing the resonance phenomenon of the silicon melt and to prevent the fluctuation of the melt and the eccentricity phenomenon of the ingot.

(32) In addition, since the average value of the target seed output rotation number (T_f.sub.out) coincides with the target seed input rotation number (T_f.sub.in) or is controlled within a predetermined error range, quality may be guaranteed in a radial oxygen concentration (radial Oi), an axial oxygen concentration (axial Oi), and a defect-free region of a crystal region of the single crystal ingot, which are affected by the seed rotation number (f).

(33) FIG. 5 is a graph illustrating an eccentric state and a diameter state of a single crystal ingot manufactured according to the related art and the present invention, respectively.

(34) In the related art, a single crystal ingot is manufactured by controlling a seed rotation number with a preset target seed input rotation number, whereas in the present invention, a single crystal ingot is manufactured by controlling a seed rotation number with a target seed output rotation number calculated into a sin function or a linear function according to a target seed input rotation number.

(35) In an eccentric state of a single crystal ingot, the single crystal ingot of the related art appears in an eccentric state biased to a left side, whereas the single crystal ingot of the present invention appears to almost coincide with a center thereof.

(36) In a deviation of a target diameter at a left/right side diameter position of a single crystal ingot, a diameter deviation of the single crystal ingot of the related art appears relatively large in the eccentric state, but it may be seen that a diameter deviation of the single crystal ingot of the present invention is remarkably reduced at the center and improved.

(37) According to the present invention, a pulling control device for growing a single crystal ingot and a pulling control method applied thereto can minimize that a seed rotation number (f) is set to a specific rotation number (fo) causing a resonance phenomenon of a melt by providing a target seed output rotation number (T_f.sub.out) that varies in real time so as to match a rotation form for each length of an ingot according to inputting a target seed input rotation number (T_f.sub.in) and controlling a rotation number (f) of a seed cable, and it is possible to prevent fluctuation of the melt and an eccentricity phenomenon of the ingot.

(38) Therefore, a single crystal ingot can be grown straight in an axial direction, so that a diameter of the single crystal ingot can be formed uniformly even with a simple grinding process, and a working time can be reduced.

(39) In addition, since the seed rotation number (f) is varied to the target seed output rotation number (T_f.sub.out) expressed in a sin function or a linear function according to the level of the target seed input rotation number (T_f.sub.in), there is an advantage that quality may be guaranteed in a radial oxygen concentration (Radial Oi) and an axial oxygen concentration (axial Oi) of the single crystal ingot and a defect-free region in a crystal region.

(40) It will be apparent to those skilled in the art that various modifications can be made to the above-described exemplary embodiments of the present invention without departing from the spirit or scope of the invention. Thus, it is intended that the present invention covers all such modifications provided they come within the scope of the appended claims and their equivalents.

(41) TABLE-US-00001 DESCRIPTION OF REFERENCE NUMERALS 100: single crystal ingot growth device 110: pulling drive unit 111: seed cable 120: pulling control unit 121: determination part 122: calculation part 123: output part