POROUS TWO-WAFER BATTERY
20210135231 ยท 2021-05-06
Assignee
Inventors
Cpc classification
H01L27/088
ELECTRICITY
Y02P70/50
GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
H01L21/4853
ELECTRICITY
H01L23/58
ELECTRICITY
H01M10/42
ELECTRICITY
Y02E60/10
GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
H01M2004/021
ELECTRICITY
H01L29/66734
ELECTRICITY
H01M4/628
ELECTRICITY
H01L29/0619
ELECTRICITY
H01M4/13
ELECTRICITY
H01M10/4257
ELECTRICITY
H01M2010/4271
ELECTRICITY
H01M10/0585
ELECTRICITY
H01L22/14
ELECTRICITY
International classification
H01M4/62
ELECTRICITY
H01M10/0585
ELECTRICITY
Abstract
A porous two-wafer battery comprises a first wafer and a second wafer. Each of the first wafer and the second wafer comprises a substrate, a conductive layer, and a passivation layer. The first wafer is parallel to the second wafer. The passivation layer of the first wafer is closer to the passivation layer of the second wafer. The first wafer serves as an anode and the second wafer serves as a cathode. The substrate comprises a plurality of pores and a P+ doped region. The plurality of pores are symmetric with respect to a respective center of each of the first wafer and the second wafer. An adhesion promotion layer is between the conductive layer and a respective side wall of the plurality of pores.
Claims
1. A porous two-wafer battery comprising a first wafer comprising a first substrate comprising a first plurality of pores; a first conductive layer on a respective side wall of each of the first plurality of pores; and a first passivation layer on a front side of the first wafer; and a second wafer comprising a second substrate comprising a second plurality of pores; a second conductive layer on a respective side wall of each of the second plurality of pores; and a second passivation layer on a front side of the second wafer; wherein the first wafer is parallel to the second wafer; wherein the front side of the first wafer is closer to the front side of the second wafer than a back side of the second wafer; and wherein the front side of the second wafer is closer to the front side of the first wafer than a back side of the first wafer.
2. The porous two-wafer battery of claim 1, wherein the first substrate of the first wafer is made of a silicon material; and wherein the second substrate of the second wafer is made of the silicon material.
3. The porous two-wafer battery of claim 1, wherein an electrolyte separator is between the front side of the first wafer and the front side of the second wafer.
4. The porous two-wafer battery of claim 1, wherein the first passivation layer comprises a first plurality of passivation sections; wherein each of the first plurality of passivation sections is of a first letter U shape; wherein the second passivation layer comprises a second plurality of passivation sections; and wherein each of the second plurality of passivation sections is of a second letter U shape.
5. The porous two-wafer battery of claim 4, wherein a first leg of the first letter U shape is directly attached to the first conductive layer of a first selected pore of the first plurality of pores; wherein a second leg of the first letter U shape is directly attached to the first conductive layer of a second selected pore of the first plurality of pores; wherein the first selected pore of the first plurality of pores is different from the second selected pore of the first plurality of pores; wherein a first leg of the second letter U shape is directly attached to the first conductive layer of a first selected pore of the second plurality of pores; wherein a second leg of the second letter U shape is directly attached to the first conductive layer of a second selected pore of the second plurality of pores; and wherein the first selected pore of the second plurality of pores is different from the second selected pore of the second plurality of pores.
6. The porous two-wafer battery of claim 1, wherein the first plurality of pores are symmetric with respect to a center of the first wafer; and wherein the second plurality of pores are symmetric with respect to a center of the second wafer.
7. The porous two-wafer battery of claim 6, wherein a centerline of the first wafer is aligned with a centerline of the second wafer.
8. The porous two-wafer battery of claim 6, wherein the first passivation layer directly contacts the second passivation layer.
9. The porous two-wafer battery of claim 8, wherein a centerline of the first wafer offsets from a centerline of the second wafer by a range from ten percent of a width of a selected pore of the first plurality of pores to fifty percent of the width of the selected pore of the first plurality of pores.
10. The porous two-wafer battery of claim 1, wherein a first adhesion promotion layer is between the first conductive layer and the respective side wall of each of the first plurality of pores; and wherein a second adhesion promotion layer is between the second conductive layer and the respective side wall of each of the second plurality of pores.
11. The porous two-wafer battery of claim 1, wherein the first wafer serves as an anode and the second wafer serves as a cathode.
12. The porous two-wafer battery of claim 1, wherein the first conductive layer and the second conductive layer are made of a material selected from the group consisting of titanium nitride, silicates, silicon carbide, copper, and nickel.
13. The porous two-wafer battery of claim 1, wherein the first passivation layer and the second passivation layer are made of a material selected from the group consisting of Ta2O5, HfO2, and SiN.
14. The porous two-wafer battery of claim 1, wherein the first substrate further comprises a first P+ doped region; and wherein the second substrate further comprises a second P+ doped region.
Description
BRIEF DESCRIPTION OF THE DRAWINGS
[0011]
[0012]
[0013]
[0014]
DETAILED DESCRIPTION OF THE INVENTION
[0015]
[0016] In one example, the plurality of pores 140 and the plurality of pores 180 are of rectangular shapes. In another example, the plurality of pores 140 and the plurality of pores 180 are of square shapes. In still another example, the plurality of pores 140 and the plurality of pores 180 are of circular shapes. A diameter of the plurality of pores 140 and the plurality of pores 180 is in a range from 1 micron to 100 microns. In examples of the present disclosure, a diameter and a pitch of the plurality of pores 140 and the plurality of pores 180 is 20 microns and 22 microns respectively.
[0017] In one example, a diameter of the first wafer 120 is 4 inches. In another example, a diameter of the first wafer 120 is 6 inches. In still another example, a diameter of the first wafer 120 is 8 inches. In yet another example, a diameter of the first wafer 120 is 12 inches. The capacity (charge) of the first wafer 120 is 60 Ah. In yet still another example, a diameter of the first wafer 120 is 18 inches. In examples of the present disclosure, the capacity (charge) of the first wafer 120 is in a range from 1 Ah to 100 Ah. A thickness of the first wafer is in a range from 100 microns to 750 microns.
[0018] In examples of the present disclosure, the first wafer 120 is parallel to the second wafer 160. The front side 131 of the first wafer 120 is closer to the front side 171 of the second wafer 160 than a back side 173 of the second wafer 160. The front side 171 of the second wafer 160 is closer to the front side 131 of the first wafer 120 than a back side 133 of the first wafer 120.
[0019] In examples of the present disclosure, the first substrate 122 of the first wafer 120 is made of a silicon material. The second substrate 162 of the second wafer 160 is made of the silicon material.
[0020] In examples of the present disclosure, the first plurality of pores 140 are symmetric with respect to a center 231 of the first wafer 120. The second plurality of pores 180 are symmetric with respect to a center of the second wafer 160. The first plurality of pores 140 are symmetric with respect to X-axis. The first plurality of pores 140 are symmetric with respect to Y-axis. The second plurality of pores 180 are symmetric with respect to X-axis. The second plurality of pores 180 are symmetric with respect to Y-axis.
[0021] In examples of the present disclosure, a centerline 130 of the first wafer 120 is aligned with a centerline 170 of the second wafer 160. The porous two-wafer battery 100 may include hundreds or thousands of cathode or anode pores.
[0022] In examples of the present disclosure, the first wafer 120 serves as an anode and the second wafer 160 serves as a cathode.
[0023]
[0024] In examples of the present disclosure, the first passivation layer 345 and the second passivation layer 385 are made of a material selected from the group consisting of Ta2O5, HfO2, and SiN. A thickness of each of the first passivation layer 345 and the second passivation layer 385 is in a range from 30 microns to 100 microns.
[0025] In examples of the present disclosure, the first wafer 320 is parallel to the second wafer 360. In examples of the present disclosure, the first substrate 322 of the first wafer 320 is made of a silicon material. The second substrate 362 of the second wafer 360 is made of the silicon material.
[0026] In examples of the present disclosure, the first plurality of pores 340 are symmetric with respect to a center of the first wafer 320. The second plurality of pores 380 are symmetric with respect to a center of the second wafer 360.
[0027] In examples of the present disclosure, the first passivation layer 345 directly contacts the second passivation layer 385. A centerline 330 of the first wafer 320 offsets from a centerline 370 of the second wafer 360 by a pre-determined distance 351. In examples of the present disclosure, the pre-determined distance 351 is in a range from 10% of a width 353 of a selected pore of the first plurality of pores 340 to 50% of the width 353 of the selected pore of the first plurality of pores 340.
[0028] In examples of the present disclosure, the first wafer 320 serves as an anode and the second wafer 360 serves as a cathode.
[0029]
[0030] The first conductive layer 430 provides electrical conductivity and serves as a reactive surface for battery reactions. The silicon substrate may not in contact with lithium. The first passivation layer 476 prevents lithium reduction and prevents dendrite growth.
[0031] In examples of the present disclosure, the first passivation layer 476 comprises a first plurality of passivation sections 477. Each of the first plurality of passivation sections 477 is of a first letter U shape. A first leg 471 of the first letter U shape is directly attached to the first conductive layer 430 of a first selected pore 491 of the first plurality of pores 140. A second leg 472 of the first letter U shape is directly attached to the first conductive layer 430 of a second selected pore 492 of the first plurality of pores 140. A length of the first leg 471 and a length of the second leg 472 is in a range from 20 microns to 50 microns.
[0032] In examples of the present disclosure, the first conductive layer 430 is made of a material selected from the group consisting of titanium nitride, silicates, silicon carbide, copper, and nickel. The first passivation layer 476 is made of a material selected from the group consisting of Ta2O5, HfO2, and SiN. The first conductive layer 430 may be formed by impregnation or deposition.
[0033] An entirety of the first conductive layer 430 is in the inner portion of the first plurality of pores 140. There is no direct path for electrical short. In addition, there is no SEI layer that would initiate the dendrite growth. Furthermore, there are no edge effects of protrusion.
[0034] In examples of the present disclosure, a first adhesion promotion layer 447 is between the first conductive layer 430 and the respective side wall 442 of each of the first plurality of pores 140.
[0035] In one example, a thickness of the first conductive layer 430 is in a range from 30 microns to 200 microns. In another example, a thickness of the first conductive layer 430 is in a range from 100 microns to 150 microns. In one example, a thickness of the adhesion promotion layer 447 is in a range from 20 microns to 200 microns.
[0036] In examples of the present disclosure, each of a porous silicon anode and a porous silicon cathode comprises 20 m pore dimension, 22 m pitch, 350 m electrode thickness; TiN coating (100 m), Ta2O5 dielectric coating on the inner surface (50 m). The cathode material is LiCoO.sub.2 or LiMn.sub.2O.sub.4. The electrolyte is 1 M LiFP6 in CE/DE.
[0037] In examples of the present disclosure, the battery is held in a pouch-type cell including rigid or semi-rigid containers. Another conductive layer may be added on top of the first conductive layer 430 to further improve conductivity.
[0038] Those of ordinary skill in the art may recognize that modifications of the embodiments disclosed herein are possible. For example, a number of the first plurality of pores may vary. Other modifications may occur to those of ordinary skill in this art, and all such modifications are deemed to fall within the purview of the present invention, as defined by the claims.