METHOD OF MANUFACTURING A SEMICONDUCTOR BODY AND SEMICONDUCTOR DEVICE

Abstract

In an embodiment a method for manufacturing a semiconductor body includes providing an subcarrier, generating a layer sequence with a first layer having a doped semiconductor material and a second layer deposited thereon, the second layer having an undoped semiconductor material, providing an electrochemical porosification of the first layer, wherein a degree of porosity is at least 20% by volume, forming mesa structures in the second layer and at least partially in the porous first layer and epitaxially producing a functional layer sequence having at least one planar third layer which is applied to the second layer comprising the mesa structures, wherein the at least one planar third layer has a specific lattice constant which is different from a lattice constant of the second layer.

Claims

1-28. (canceled)

29. A method for manufacturing a semiconductor body comprising: providing an subcarrier; generating a layer sequence with a first layer having a doped semiconductor material and a second layer deposited thereon, the second layer having an undoped semiconductor material; providing an electrochemical porosification of the first layer, wherein a degree of porosity is at least 20% by volume; forming mesa structures in the second layer and at least partially in the porous first layer; and epitaxially producing a functional layer sequence having at least one planar third layer which is applied to the second layer comprising the mesa structures, wherein the at least one planar third layer has a specific lattice constant which is different from a lattice constant of the second layer.

30. The method according to claim 29, further comprising: detaching the functional layer sequence from the first layer, optionally leaving the second layer attached to the functional layer sequence; or detaching the functional layer sequence from the subcarrier so that the porous first layer remains on the functional layer sequence, the first layer optionally being designed as an outcoupling structure for electromagnetic radiation.

31. The method according to claim 29, wherein the functional layer sequence comprises at least one active region configured for light emission.

32. The method according to claim 29, wherein forming the mesa structures comprises: generating a structured mask on the second layer, and etching the second and the porous first layer to form depressions.

33. The method according to claim 32, wherein the depressions comprise trenches having a width in a range from 5 nm to 500 nm, and wherein the trenches optionally extend up to the subcarrier.

34. The method according to claim 32, wherein the depressions comprise trenches, and wherein two adjacent trenches comprise a spacing in a range from 400 nm to 4 m.

35. The method according to claim 32, wherein the depression comprise trenches, and wherein a ratio between a width of a mesa structure and a width of a trench is in a range of 4 to 15.

36. The method according to claim 29, wherein generating the layer sequence during an epitaxial deposition of the first layer comprises depositing a thin undoped release layer so that the first layer is divided into a region facing a support and a region facing away from the support.

37. The method according to claim 29, wherein generating the layer sequence during an epitaxial deposition of the first layer introducing a dopant into the first layer having at least 2 different dopant concentrations.

38. The method according to claim 29, wherein generating the layer sequence comprises generating non-porous regions by: applying a patterned mask to the second layer to create non-porous areas beneath the patterned mask; and removing the structured mask after the electrochemical porosification of the first layer.

39. The method according to claim 38, wherein dimensions in the patterned mask are selected to be slightly larger than the area or areas of the first layer below the patterned mask that are not to be porosified.

40. The method according to claim 38, wherein the functional layer sequence is implemented with an active region configured to emit light of a first wavelength over a porous region and an active region configured to emit light of a second wavelength over a non-porous region.

41. The method according to claim 29, wherein the third layer is a sheet-like third layer, and wherein a lattice constant of the sheet-like third layer deviates from a lattice constant of the second layer in a range between 0.2% and 3%.

42. The method according to claim 29, wherein the first and second layers comprise at least one of GaN, GaP, AlGaN, InGaN, AlInGaN, AlInGaP or AlGaAs, and wherein the first layer is provided with a dopant during an epitaxial deposition.

43. The method according to claim 29, wherein the second layer comprises undoped GaN and the planar third layer comprises an indium-containing material, with an indium content in a range between 0.0001% to 25%.

44. The method according to claim 29, wherein materials having a wurtzite structure coalescent surfaces are oriented so that they are perpendicular to an a-axis.

45. The method according to claim 29, wherein epitaxially generating the functional layer sequence comprises generating a multiple quantum well structure configured to emit light, and wherein the multiple quantum well structure extends over at least one mesa structure.

46. The method according to claim 29, wherein epitaxially generating the functional layer sequence comprises depositing the planar third layer on the mesa-structured second layer, leaving the mesa structure substantially unfilled.

47. The method according to claim 46, wherein a material of the third layer forms a bridge over an end portion of the mesa structure facing away from a support.

48. A semiconductor device comprising: a subcarrier; a layer sequence comprising a first layer having a doped semiconductor material and a second layer deposited thereon, the second layer comprising an undoped semiconductor material, wherein the first layer comprises at least one porous region, a porosity level of which is at least 20% by volume; a mesa structure introduced in the first and second layers and comprising several depressions; and a functional layer sequence comprising at least one planar third layer located at the second layer comprising the mesa structure, wherein the at least one planar third layer has a lattice constant which is different from a lattice constant of the second layer.

49. The semiconductor device according to claim 48, wherein a width of a depression is about to 1/20 of a distance between two adjacent depressions.

50. The semiconductor device according to claim 48, wherein the first layer comprises at least one non-porous region at least partially surrounded by a porous region.

51. The semiconductor device according to claim 50, wherein the at least one non-porous region is separated from the porous region by a trench forming the mesa structure.

52. The semiconductor device according to claim 48, wherein the functional layer sequence comprises a multiple quantum well structure arranged on the third layer.

53. The semiconductor device according to claim 52, wherein a first region of the multiple quantum well structure overlying a porous region of the first layer is configured to emit light of a first wavelength and a second region of the multiple quantum well structure overlying a non-porous region of the first layer is configured to emit light of a second shorter wavelength.

54. The semiconductor device according to claim 48, wherein the first layer comprises a first sub-region having a first degree of porosity and a second sub-region having a second degree of porosity, the first sub-region being separated from the second sub-region by an optional separation layer.

55. The semiconductor device according to claim 48, wherein the first layer comprises n-doping and the second layer is undoped, the first and second layers comprising the same base material.

56. The semiconductor device according to claim 48, wherein the second layer comprises an undoped GaN layer and the third layer comprises InGaN with an indium content in a range of 0.0001% to 25%.

Description

BRIEF DESCRIPTION OF THE DRAWINGS

[0045] Further aspects and embodiments according to the proposed principle will become apparent with reference to the various embodiments and examples described in detail in connection with the accompanying drawings. Thus showing:

[0046] FIGS. 1 and 2 several steps of a method of manufacturing a functional semiconductor body, which realizes some aspects of the proposed principle;

[0047] FIGS. 3A and 3B some aspects of another embodiment according to the proposed principle;

[0048] FIGS. 4 and 5 show another embodiment example with several method steps for the fabrication of a functional semiconductor body, which realize some aspects of the proposed principle;

[0049] FIG. 6 an embodiment of a possible mesa structure for a material system with wurtzite structure;

[0050] FIG. 7 a further embodiment of a possible mesa structure for a material system with wurtzite structure;

[0051] FIG. 8 shows another embodiment example with some method steps for the fabrication of a functional semiconductor body, which realize some aspects of the proposed principle; and

[0052] FIG. 9 shows two top views of emission surfaces of optoelectronic components which can be manufactured by the method according to FIG. 8.

DETAILED DESCRIPTION OF ILLUSTRATIVE EMBODIMENTS

[0053] The following embodiments and examples show various aspects and their combinations according to the proposed principle. The embodiments and examples are not always to scale. Likewise, various elements may be shown enlarged or reduced in size to highlight individual aspects. It will be understood that the individual aspects and features of the embodiments and examples shown in the figures may be readily combined with each other without affecting the principle of the invention. Some aspects have a regular structure or shape. It should be noted that minor deviations from the ideal shape may occur in practice, but without contradicting the inventive idea.

[0054] In addition, the individual figures, features and aspects are not necessarily shown in the correct size, nor do the proportions between the individual elements have to be fundamentally correct. Some aspects and features are highlighted by showing them enlarged. However, terms such as above, above, below, below, larger, smaller and the like are correctly represented in relation to the elements in the figures. Thus, it is possible to derive such relationships between the elements based on the figures.

[0055] The inventors have recognized that the partial electrochemical decomposition (here called porosification) of a precisely defined GaN-containing layer causes a strong reduction of a holding force of a GaN epitaxial stack to the epitaxial substrate (sapphire or also Si, GaN) or also to other layers still to be grown. Thereby very uniform pores (in the range of 20 nm to 100 nm)homogeneously distributedare etched into the specific GaN layer. The selectivity of the porosification can be achieved by a high n-doping (Si) of the GaN layer. That is, only sufficiently highly doped layers are porosified. In addition to a reduced adhesion force, an improved relaxation is also achieved. This means that porosification also reduces a force between the porosified layer and still further layers to be grown. In the case of different lattice constants, porosification thus greatly reduces the tensions in the layer to be grown, so that it can grow up essentially without lattice defects. This effect can be exploited, on the one hand, by alternating porosified and non-porosified regions, thus creating localized strains. On the other hand, the effect of strain compensation can also be enhanced by introducing additional mesa structures with trenches that can relax when overgrown and thus contribute to a reduction of strains due to different lattice constants.

[0056] Due to the different lattice constant in the layer grown in this way, the indium content is incorporated with a different stoichiometric composition during epitaxial deposition of an indium-containing material, depending on the existing strain and thus the different lattice constant. Due to the now local change of the indium fraction in the material system, the band gap is changed. In addition to indium, this effect can also be achieved with Al or another material, which is incorporated with a stoichiometric change depending on the lattice constant and thus causes a change in the band gap.

[0057] Since a chemical etch attack takes place via the vertical through-material dislocation in the GaN epitaxial layer stack over the entire surface, a porosification can take place over the entire wafer. The layer to be porosified can be buried under other GaN or other material layers.

[0058] Alternatively, by partially passivating the surface during porosification, a laterally selective etch attack can occur. By applying a mask, the buried areas in the first layer to be porosified below the masked surface areas are not or only slightly porosified, or etched, laterally in the plane, so that they have different chemical and mechanical properties in subsequent process steps. Optionally, an additional second layer can be inserted between the first layer to be porosified and the further layers forming the semiconductor device, so that this additional layer can serve as a mechanical breaking point in a further process step. In this way, depending on the application and design, different areas can have different degrees of porosity laterally or vertically.

[0059] FIGS. 1 and 2 show an exemplary first embodiment of a method according to the proposed principle for producing a semiconductor body in which the lattice stresses are reduced, and which can be removed from a substrate particularly easily by means of a porous release layer.

[0060] For this purpose, in a first step S1, a carrier substrate 1 is provided as a subcarrier. In the present embodiments, this is a sapphire carrier substrate, but a carrier substrate with a different material system can also be used. For example, silicon-based carrier substrates, silicon nitride-based carrier substrates, or as shown sapphire-based carrier substrates are possible. In this case, the sub-substrate is also selected according to the material system that will be used later.

[0061] In a next step S2, a first layer 2 of the layer sequence 4 is deposited on the subcarrier 1. This first layer 2 is also provided with a dopant during the epitaxial deposition on the substrate of the subcarrier 1. The thickness of the layer is in the range between 500 nm and 3 m, for example 1.5 m. GaN or also AlInGaP or, as a further material system, AlGaAs can be used as the material, the latter for the production of red LEDs. In the present embodiment example, GaN is used as material for the first layer, which is epitaxially deposited on the subcarrier 1 with silicon Si as dopant. In this case, the dopant concentration of silicon atoms is in the range of 1010.sup.19 atoms/cm.sup.3. In addition, one or more thin buffer layers in the range of less 10 nm to 100 nm can also be deposited on the material of the subcarrier 1 before the epitaxial growth of the GaN layer 2. These are not shown separately in step S2 but can be used for further planarization of the subcarrier 1. Furthermore, depending on the material system used, the additional buffer layers also serve as an etch stop or lattice matching structure or also as a current expansion layer for the subsequent electrochemical porosification process.

[0062] In a subsequent step S3, an undoped GaN layer 3 is deposited on the doped, epitaxially deposited GaN layer 2. Alternatively, AlInGaP can be used if layer 2 consists of doped AlGaAs or AlInGaP. The thickness of layer 3 is, for example, 100 nm (range from 20 nm to 150 nm) and, in terms of its dimension, is designed to be significantly thinner than the doped GaN layer 2. As a result, layer 3 also exhibits different mechanical, chemical and electrical properties compared with the latter. The undoped GaN layer 3 and the doped GaN layer 2 together form the layer sequence 4.

[0063] In step S4, the wafer thus produced is now subjected to an electrochemical stripping process. This is also referred to as the porosification process. For this purpose, a voltage is applied to the formed wafer structure and the layer sequence 4 so that a current flows through the undoped GaN layer 3 and the doped GaN layer 2. The current flow causes a partial chemical decomposition of the doped GaN layer. This process is called porosification. In this process, pores with a size in the range of a few 10 nm to 100 nm are uniformly etched in the doped GaN layer 2 by the electrochemical process. It was found that the distribution of the pores is essentially homogeneous and mainly perpendicular to the sapphire surface. The etch rate as well as the pore size and the associated material removal depend on the applied voltage, the current flow during the electrochemical process, the electrolyte used as well as a concentration of dopant atoms in the GaN layer 2. It should be noted that the undoped GaN layer 3 is also attacked by the electrochemical process. Material is removed from both layers, since they are not electrically insulating. However, the conductivity of the undoped GaN layer is significantly lower, so that selectivity during the porosification process is achieved by doping with silicon in layer 2.

[0064] In other words, the doped GaN layer 2 is attacked and etched much more strongly during the electrochemical process and thus material is dissolved out than is the case in the undoped GaN layer 3. Since the current in the present example is introduced over the entire surface of the wafer during porosification, the electrochemical process in the layer stack 4 follows over the entire surface. The thus porosified layer 2a in step S4 is thus buried under the undoped GaN layer 3.

[0065] The amount of material removed by the porosification process can be adjusted by the duration and the parameters described above. In order to ensure good subsequent removal by a laser lift-off or other mechanical process, the inventors propose a porosity level of at least 20% by volume. It was found that up to a porosity level of about 90 volume % to 95 volume %, the mechanical stability of the remaining material is nevertheless sufficient to allow further manufacturing steps. Nevertheless, due to the high material removal, an adhesion force between the substrate 1 and the porosified GaN layer 2a or between the latter and the undoped GaN layer 3 is strongly reduced. In this respect, a degree of porosity between 40 volume % and 90 volume % is therefore considered appropriate.

[0066] After porosification of the first layer 2 of the layer sequence 4, the wafer thus produced can be further processed to prepare it for the deposition of further layers having a different lattice constant. For this purpose, a patterned mask is applied to the undoped GaN layer 3 in step S5. In the embodiment example, this is designed as a plurality of strips in plan view. Here, a ratio of the width of the stripes to the distance between two adjacent stripes is about 10. In this embodiment, the distance between 2 stripes is in the range of 1 m to 2 m. Such a distance and a width of about 100 nm to 200 nm can still be produced lithographically with current technologies.

[0067] Subsequently, a selective etching process takes place in step S6, in which etching is performed through the undoped GaN layer, and the porosified layer to just before the subcarrier. In this way, a mesa structure with narrow but deep trenches is created. A ratio of depth to width of a trench is in the range of 5 to 14, and in particular in the range of 10. By a combination with the mesa-structured porosified layer, the structure produced in this way offers the special property that it can accommodate strains due to mismatched lattice constant. In other words, this layer is also suitable to be overgrown with a material system of different lattice constant without causing strains in it and thus defects in the crystal structure. Rather, the mesa-structured porous layer 2a strains, so that another layer can be grown in turn as a result without major strains. As a result, a layer grown on the mesa-structured porosified layer can be produced without major defects and essentially planar, and this can thus serve as a base layer for a functional semiconductor body or a functional semiconductor layer sequence.

[0068] The illustration of step S7 in FIG. 2 shows such a first step of a growth of an n-doped indium-containing layer 10, for example an InGaN layer, whose lattice constant is larger than the lattice constant of the layer sequence 4. The growth process of the n-doped InGaN layer 10 causes strains in the layer sequence 4, which are compensated by the porous regions 2a as well as the mesa structure in the layer sequence 4. As a result, the InGaN layer 10 grows up essentially defect and defect-free. In addition, material bridges are formed during the growth process, spanning the trenches 20. In other words, the InGaN material of the layer 10 thus grows only slightly into the trenches 20 essentially in the surface region of the undoped GaN layer 3 but does not fill these trenches.

[0069] This creates voids as shown in step S7, which can accommodate the crystal strains in the layer sequence 4. By varying the degree of porosity across layer 2c or further lithographic or epitaxial measures, a large degree of relaxation can be achieved in layer sequence 4 so that the defect density in layer 10 remains low. The grown layer 10 thus has an essentially planar and defect-free surface after the growth process, so that further layers of a functional semiconductor or a functional layer sequence 6 can be deposited on it with high quality. Step S8 shows the production of such a layer sequence 6, in which the layer is n-doped during the growth process.

[0070] Further layers 11 and 12 are deposited on this n-doped layer 10. The layer 11 forms a multiple quantum well for the emission of light of a defined wavelength. Layer 12 is formed by a p-doped GaN or a p-doped AlInGaP layer. The use of a GaN layer is particularly easy to implement. Alternatively, however, layer combinations e.g. of p-doped InGaN/AlGaN/GaN layers can also be formed. Thus, layer sequence 6 forms a device which, in operation, generates light of a defined wavelength when current flows through it. The wavelength is given by the band structure of the multiple quantum well, which in turn depends on possible strains in the underlying layer 10. Due to the low defect density and the essentially planar surface, the defect density of the multiple quantum well is also low in this example, so that a high radiative recombination rate can be achieved.

[0071] In step S9, the component or components thus produced are now applied from the subcarrier 1 to a final carrier substrate 5. For this purpose, the final carrier substrate 5 is covered with a metallization layer 70, which forms the p-contact for contacting the functional layer sequence 6. The p-doped layer 12 is attached to the metallization layer 70 by means of a solder. Subsequently, by means of a laser lift-off or other process, the subcarrier 1 is removed. Due to the porosification of the areas 2a, the adhesive force between the subcarrier 1 and the porosified areas 2a is greatly reduced in this process. This also reduces the energy input required for a laser lift-off process, so that only minor damage is formed in the surface.

[0072] In a further process step S10, remaining structures of the layer sequence 4 can be removed after a laser lift-off so that the planar layer 10 is exposed. A further metallized contact area 7 is applied to this layer, so that the resulting component is now designed as a vertical light-emitting diode. This structure is shown as a result for a single diode in step S10.

[0073] Alternatively, the mesa-structured and porous layer 2a may remain on the device and serve both for electrical contacting and as an outcoupling structure. Such an embodiment example is shown in step S10 of FIG. 2. Here, metallic contacts 7a are deposited on the porosified areas 2a. Since the porosified regions as well as the underlying layer 3 are conductive, current flow also occurs through the various layers 2a, 3, 10 and 12 in this example, so that recombination of charge carriers occurs in the multiple quantum well 11. In addition, the porosified regions 2a are used as the decoupling structure since they form a refractive index transition between the layer 3 and the air medium. Thus, in this embodiment example, additional roughening of the layer 10 or further decoupling structures and measures could be omitted.

[0074] Depending on the application, different variations of the proposed principle, i.e. a porosification of a first layer of a layer sequence, are now possible.

[0075] FIG. 3A shows such an example, where differently doped regions are proposed to produce different degrees of porosity. FIG. 3A shows the result of the first steps of a manufacturing method of a semiconductor device. A first layer 2 has been deposited on a subcarrier 1, comprising a region 2 adjacent to the subcarrier 1 and a region 2. The regions 2 and 2 are separated from each other by a thin separation layer 3b. Separating layer 3b serves on the one hand as a predetermined breaking point and comprises, AlGaInN or silicon nitride, SiN, the latter for example as a monolayer. Furthermore, layer 3b separates different doping concentrations from each other. Thus, the doping level of the regions 2 and 2 is different, so that different porosity levels are also achieved with this during a subsequent electrochemical process. In the present embodiment example, the doping in region 2 is selected to be significantly higher than in region 2. As a result, significantly more material is removed and decomposed in region 2 during the electrochemical process than in region 2, which is closer to the undoped GaN layer 3.

[0076] For example, the structure thus formed is particularly suitable as an outcoupling structure. After forming a functional semiconductor body configured for light emission, the subcarrier is separated from the material 2 and the separation layer 3b. For this purpose, the predetermined breaking point 3b can also be removed in a further step, so that only the porosified region 2 of the first layer remains on the device. The degree of porosity of this porosified layer is selected so that layer 2 serves as an outcoupling structure, since its pore structure forms a suitable refractive index jump. Subsequent roughening by means of KOH or other measures is therefore unnecessary.

[0077] In FIG. 3B, the structure of FIG. 3A is shown after mesa structuring, such as that carried out in steps S5 and S6 in the previous example of FIG. 1. The etching process has penetrated the two subregions 2 and 2 as well as through the thin release layer 3b and extends to just before the submount 1. As in the previous example, the structure produced in this way can be overgrown with another material system of different lattice constant without causing distortions and defects in it.

[0078] FIGS. 4 and 5 show various steps of a further embodiment of the proposed principle, in which additional measures and structuring of the layer sequence 4 are carried out before a mesa structure is formed. This allows further applications to be realized.

[0079] Steps S1 and S2 are the same as in the embodiment example of FIG. 1 or 2. Thus, after a subcarrier 1 has been provided, a doped GaN layer 2 is again epitaxially grown. A thin sol-breakup or sol-separation layer 3a is now deposited on the doped GaN layer 2. This can be formed, for example, from AlGaInN or also from intrinsic silicon nitride, for example a monolayer of SiN, and in the present embodiment also extends over the entire wafer. The undoped GaN layer 3 is again deposited epitaxially over the thin predetermined breaking layer 3a. The resulting layer sequence 4 on the carrier substrate 1 is shown in FIG. 4 in step S3.

[0080] In step S3, a patterned mask 8 is now further deposited on the undoped GaN layer 3, for example on 2 sites. The mask 8 is chemically inert to the following electrochemical porosification step and is listed as a hard mask, for example. As shown in step S4, after the structured mask 8 is applied, the electrochemical porosification is performed. In this process, however, the structure of the mask 8 acts as shading, so that areas below the mask 8 in the first layer 2a are precisely not porosified or etched but remain as non-porosified areas 2b. In the example of steps S3 and S4 of FIG. 4, these are 2 areas that are a few m wide and essentially form squares in plan view. However, other dimensions and or a different number of such areas may be provided. Likewise, the shape can be different, for example as polygons or also as circles or rectangles.

[0081] The background for such selective pore-solubilization is the fact that current flow is largely prevented by layer 3, layer 3a and first layer 2 due to the insulating behavior of mask 8. In other words, current always seeks the path of least resistance (and thus usually the shortest path if resistivity is constant) and therefore would not flow below the areas covered or shaded by mask 8 during the electrochemical process. As a result, porosification due to current flow occurs mainly in the unshaded regions of the first layer, so that porosified regions 2c are formed there. Likewise, penetration of an electrolyte under the shadowed areas during the electrochemical etching process is impeded or also prevented, so that no further etching channels can form there, or existing channels are not widened by the electrolyte.

[0082] The dimension of the mask 8 is adapted to the dimension of the later non-porous area 2b. Although the sheet resistance is greater below the mask and the current flow is significantly smaller there, slight under-etching takes place within a small range in the edge region. Due to the under-etching during the electrochemical porosification, it is advisable to make the resist mask 8 somewhat larger in dimension than the later non-porosified area should be. This compensates for a slight under-etching below the mask and thus into the shadowed area. For nitrides, this under-etching can be in the range of 200 nm to about 800 nm; for materials based on GaAs or GaP, the under-etching can be larger than 1000 nm. The dimension and lateral extent must be chosen accordingly.

[0083] In the subsequent method step S5, mask 8 is removed again and instead mask 8a is applied to the surface of layer 3 to create the mesa structure.

[0084] The mask is designed in such a way that parts of the non-porous areas 2b are covered by the mask structure. Only at the edges between the porosified areas and the non-porosified areas of layer 2 are recesses provided in the mask. In addition, a mask structure is also arranged over the remaining modified areas 2c, which has recesses at periodic intervals. Thus, a mask structure 8a is created, with the aid of which the mesa structure described in the previous examples can be etched.

[0085] Method step S6 of FIG. 5 shows the result after such a selective etching process in which trenches 20 are etched into the layer sequence 4 at regular intervals. In particular, two trenches 20 are provided adjacent to each of the non-porous areas, so that one trench 20 separates a porous area 2c from a non-porous area 2b.

[0086] The AlInGaN layer 10 is then applied to the structure produced in this way. As in the previous examples, this is p-doped, n-doped or undoped, depending on the application and the desired design of the component. The additional mesa structures reduce stress in the layer 10 so that it grows as defect-free and planar as possible. A multiple quantum well 11 is deposited on the grown layer 10, which is followed by a layer 12 that continues to be doped. The layers 10, 11 and 12 form the layer sequence 6 of the functional semiconductor layer sequence. Subsequently, a patterned mask 8b is arranged on the deposited layer 12. Thereby, mask components cover the non-porous regions 2b and the adjacent trenches 20 as well as a part of the adjacent porous regions 2c. Parts of the surface of layer 12 continue to be exposed between the individual masks 8b.

[0087] In a subsequent selective etching process, shown in step S7 of FIG. 5, the free areas of layer 12 as well as the underlying areas of the multiple quantum well structure 11 of layer 10 and the layer sequence 4 are etched. This divides the semiconductor layer sequence into individual functional devices. The etching trench 20 extends from the surface of the semiconductor layer sequence 6 to approximately the substrate 1. After such an etching step, contact regions 7A and 7 are further provided in the respective devices. Here, the contact region 7a is electrically isolated from the layer 12 as well as from the multiple quantum well 11 and contacts the doped buried layer 10. The contact region 7 directly electrically connects the layer 12.

[0088] Through the trenches 20 created by the selective etching process, the porosified areas 2c can be reached and removed by a wet chemical and selective etching process. As a result, the columnar structures 20b of non-porosified material shown in method step S8 are left standing, thus forming a support structure for the devices located thereon. The selective process also slightly roughens layer 3a as well as layer 3 so that they can serve as an outcoupling structure for the light generated in the multiple quantum well. These pillars can take different shapes depending on the design. In some aspects, the holding structure can form a truncated cone, truncated pyramid, or trapezoid, with the smaller base of this body connected to the device. In other words, the diameter decreases away from the building element. This decrease in diameter, or more generally a change in diameter, is achieved by varying doping during epitaxial deposition of the first layer. Among other things, the doping also controls the rate of porous solubilization, so that the undercutting below the shadowed regions is also influenced.

[0089] In one or more further method steps, shown in FIG. 5 in step S9, an stamp pad 30 is selectively applied to the functional semiconductor body 60 and then a mechanical process or laser lift-off process is used to separate the functional semiconductor body from the pillar and support structure 20b. Semiconductor body 60 now adheres to the stamp pad 30 and can be transferred for further process control or processing. The remaining depressions in the layer 3a or 3 caused by the patterning can serve as a further decoupling structure or can also be filled with a suitable material.

[0090] For the production of a mesa structure to reduce possible tension of layers grown on it, different prerequisites may be necessary or have to be observed, depending on the material system.

[0091] On the one hand, the height of the layer to be porosified later and thus also the height of the trenches should not exceed a few micrometers, so that still sufficient stress compensation is ensured. In addition, if the ratio between depth and trench width were too great, a trench would not be able to be etched uniformly, so that instead of an essentially rectangular course as shown in the cross-section diagram, a triangular depression would form in cross-section. A height of the layer 2 to be porosified corresponding to the previous examples should therefore be approximately 1 m to 2 m, possibly only 500 nm.

[0092] With a width of the same order of magnitude as the height of layer 2, for example shown in step S6 of FIG. 1, the width of the trenches can be selected to be approximately ten times smaller than the width of the respective section of layer 2 to be porosified. This results in the square cross-sectional area shown in step S6 of FIG. 1. In general, the trenches should be as narrow as possible, but sufficiently large to ensure relaxation, i.e. stress compensation, of the stressed layer applied to the layer sequence 4.

[0093] The various etching and masking steps are achieved by different lithography processes. Here, for the formation of the mesa structure, a wet-chemical, but also a dry-chemical etching process to layer 2a can be realized.

[0094] FIGS. 6 and 7 show different geometries for such a mesa structure in plan view. Depending on the material system, it is necessary to form the mesa structures along a given axis or a given orientation. In FIGS. 6 and 7, this is illustrated using a wurtzite structure for nitrite-based material systems. In a wurtzite structure, it is convenient to orient the coalescence surfaces 21 so that they are essentially perpendicular to the a-axis [1120]. In this way, the trenches of the mesa structure are also etched parallel to the coalescence surfaces, and the structures shown in FIG. 6, for example, are formed.

[0095] Another embodiment, in which mesa structures are designed as periodic hexagons, is shown in FIG. 7, in which the trenches and the coalescence surfaces 21 are designed to form polygons and, in particular, a hexagonal structure. As shown, the edge length of this hexagonal structure is less than 2 m, and the width of a trench is essentially one tenth less, i.e. in the range of 200 nm or less.

[0096] FIG. 8 shows a further example of an embodiment as well as an application case in which porous regions and non-porous regions are used to produce a light-emitting semiconductor body, whereby this emits light of different wavelengths. In the first method step shown, as already explained in the previous examples, a subcarrier 1 is provided onto which a doped GaN layer 2 is deposited. On this, in turn, an undoped layer of the same material system is deposited, resulting in the layer sequence 4 shown in method step S1.

[0097] In subsequent method steps, a mask structure 8 is first deposited on the surface of the undoped GaN layer 3. The structure thus obtained is then subjected to an electrochemical detachment and porosification process, so that primarily non-shaded areas of the doped layer 2 are porosified. In the areas where the mask 8 covers the layer 2, no dedicated porosification takes place due to the reduced or non-existent current flow as explained above, so that these areas are essentially left with continuous material of doped GaN. As a result, no subsequent reduction in strain due to porosification is expected in regions 2b.

[0098] In a further method step shown in S3 of FIG. 8, the mask 8 is now removed and the mask 8b is again applied to the layer 3. Here, however, the mask structuring is carried out in such a way that part of the mask 8b is arranged over the non-porosified areas 2b. Similarly, mask sections are deposited over the porous areas 2c. It is provided that a small part is left open between the individual mask sections so that the layer 3 underneath is exposed. The position of this exposed portion is chosen so that it is essentially along the interface between the porous solubilized areas 2c and the non-porous solubilized areas 2b, respectively. Then, again, a selective etching process can be carried out to create trenches at the interfaces between the areas 2b and 2c down to the submount 1. In this way, a structuring is carried out which separates the porosified areas 2c from the non-porosified areas 2b by means of a trench.

[0099] Subsequently, the mesa structure thus contained is overgrown with an indium-containing layer, in the embodiment with a GaN layer 10, see step S4 in FIG. 8. As in the previous examples, the InGaN layer forms bridges between the individual trenches 20 so that the trenches essentially remain as voids and are not overgrown. However, the InGaN material can at least partially enter the trenches at the top between the undoped layer 3.

[0100] Due to the non-porous regions 2b, the deposited material of the layer 10 is strained over these regions, which is noticeable in a change and strain of the lattice structure. Whether this tension now leads to additional lattice defects depends on the design of the dimensioning as well as the difference of the two lattice constants between the doped InGaN layer 10 and the undoped layer 3.

[0101] In further deposition processes, the layer 12 with another contained multiple quantum well is now deposited on the layer 10. In this process, the layer 12 comprises AlInGaN, which is doped or also provided with a doping gradient, depending on the embodiment. Due to the strains introduced by the non-porous regions 2b, the band structure and thus the band gap of the multiple quantum well 11 changes. This is caused by the strains continuing through the layer 10 and extending into the layer 12 and the multiple quantum well 11. For this purpose, it is necessary to make the in InGaN layer 10 as thin as possible, but planar, in order to guide the strains through the layer 10 into the layer 11. As a result, the strains thus lead to an emission of light of different wavelengths. It was achieved that a wide range of possible wavelengths can be reached by a suitable choice of the strain and the material system.

[0102] A top view of an electronic component manufactured in this way is shown in various alternative embodiments in FIG. 9. The emission surfaces can be seen, with the multiple quantum well and any porosified areas of varying degrees of porosity beneath them. By suitable porosification and insertion of a mesa structure, different strains can be generated in the material arranged above. The different bandgaps resulting from the tensions due to a changed indium content now cause an emission of light with different wavelengths. In this way, in a suitable material system, for example the above-mentioned AlInGaN, light emission in the blue, green and red range can be achieved through the strain.

[0103] In the left partial figure of FIG. 9, the region b in the upper left corner shows the greatest strains, for example a non-porous layer 2b is arranged there. The region r, in turn, is much less strained, so that the multiple quantum well emits essentially red light there as a result. The two lower regions g are provided with a degree of porosity that lies between the blue and red regions b, r, so that the multiple quantum well is slightly strained here and thus emits light in the green range. Alternatively, such a pixel with a blue, red and green emitter area may be arranged side by side. Such an embodiment is shown in the right part of FIG. 9, in which areas with different degrees of porosity are designed to generate light in the blue, red and green spectrum.

[0104] For example, to create a different degree of porosity, it is intended to selectively remove the individual masks 8 as shown in step S2 of FIG. 8 above and then continue the electrochemical porosification process. For example, to create a different degree of porosity to form a blue, red and green emitter area, a shadow mask 8 can be applied to the later blue and green emitter area. The red surface remains free.

[0105] Subsequently, a first electrochemical detachment process is carried out and a first porosification is generated for the red emitter area. Then this electrochemical detachment process is stopped, the mask over the green area is removed, and then the electrochemical detachment process is continued. Correspondingly, the red and green areas (or layer 2, which is later under the multiple quantum well) are now further porosified. Thus, a different degree of porosity can be achieved in the respective surfaces. Alternatively, as in FIGS. 3A and 3B, for example, additional layers can be provided to create differences in porosification and thus be used to form the differently colored areas.