METALLIC THERMAL INTERFACE MATERIALS AND ASSOCIATED DEVICES, SYSTEMS, AND METHODS
20230413480 ยท 2023-12-21
Inventors
Cpc classification
H05K7/20409
ELECTRICITY
H01M10/659
ELECTRICITY
H01M10/653
ELECTRICITY
H05K7/20509
ELECTRICITY
H01M10/6551
ELECTRICITY
H05K7/2029
ELECTRICITY
International classification
Abstract
A heat-transfer component defines a thermal-interface surface and has a metallic thermal-interface material bonded to the thermal-interface surface. The metallic thermal-interface material has a solid-to-liquid phase-change temperature between about 60 C. and about 90 C. With a thermal-interface material bonded to the thermal-interface surface, the thermal-contact resistance between the thermal-interface material and the heat-transfer component can be reduced or substantially eliminated compared to conventional thermal-interface materials, including conventional metallic thermal-interface materials. Also disclosed are electrical devices having a heat generating component cooled by such a heat-transfer component.
Claims
1. An integrated heat-spreader configured to overlie an integrated-circuit die, the integrated heat-spreader comprising: a first major surface defining a thermal-interface surface and being configured to face a heat-removal device; a second major surface positioned opposite the thermal-interface surface and being configured to face the integrated-circuit die; and a metallic thermal-interface material bonded to the thermal-interface surface, the metallic thermal-interface material having a solid-to-liquid transition temperature between about 60 C. and about 90 C.
2. The integrated heat-spreader according to claim 1, wherein the metallic thermal-interface material is a eutectic mixture of Bismuth, Indium, Tin and Gallium.
3. The integrated heat-spreader according to claim 2, wherein the solid-to-liquid transition temperature is about 60 C., about 70 C., about 80 C., or about 90 C.
4. The integrated heat-spreader according to claim 1, wherein the metallic thermal-interface material is a non-eutectic mixture of Bismuth, Indium, Tin and Gallium.
5. The integrated heat-spreader according to claim 4, wherein the solid-to-liquid transition temperature is about 90 C.
6. The integrated heat-spreader according to claim 5, wherein the metallic thermal-interface material has a liquid-to-solid transition temperature of about 70 C.
7. The integrated heat-spreader according to claim 4, wherein the solid-to-liquid transition temperature is less than about 90 C. and the liquid-to-solid transition temperature is above about 70 C.
8. (canceled)
9. A heat-removal device configured to dissipate heat received from a heat-generating electronic component, the heat-removal device comprising: a base defining a first major surface and a second major surface opposite the first major surface; a metallic thermal-interface material bonded to the first major surface, the metallic thermal-interface material having a solid-to-liquid transition temperature between about 60 C. and about 90 C.; and a plurality of fins extending from the second major surface.
10. An electrical device, comprising: a heat-generating component defining a first thermal-interface surface; an integrated heat spreader configured to overlie the heat-generating component, the integrated heat spreader defining a first major surface and a second major surface positioned opposite the first major surface, the first major surface being configured to face a heat-removal device and the second major surface being configured to face the heat-generating component; and a metallic thermal-interface material bonded to the second major surface of the integrated heat spreader, the metallic thermal-interface material having a solid-to-liquid transition temperature between about 60 C. and about 90 C.
11. The electrical device according to claim 10, wherein the metallic thermal-interface material is a eutectic mixture of Bismuth, Indium, Tin and Gallium.
12. The electrical device according to claim 11, wherein the solid-to-liquid transition temperature is about 60 C., about 70 C., about 80 C., or about 90 C.
13. The electrical device according to claim 10, wherein the metallic thermal-interface material is a non-eutectic mixture of Bismuth, Indium, Tin and Gallium.
14. The electrical device according to claim 13, wherein the solid-to-liquid transition temperature is about 90 C.
15. The electrical device according to claim 14, wherein the metallic thermal-interface material has a liquid-to-solid transition temperature of about 70 C.
16. The electrical device according to claim 13, wherein the solidus-to-liquidus transition temperature is less than about 90 C. and the liquidus-to-solidus transition temperature is above about 70 C.
17. (canceled)
18. An electrical device, comprising: a heat-generating component defining a first thermal-interface surface; a heat-removal device configured to dissipate heat received from the heat-generating electronic component, the heat-removal device having a base defining a first major surface and further defining a second major surface opposite the first major surface, wherein a plurality of fins extends from the second major surface of the heat-removal device, and wherein a metallic thermal-interface material is bonded to the first major surface of the base, the metallic thermal-interface material having a solid-to-liquid transition temperature between about 60 C. and about 90 C.
19. The electrical device according to claim 10, wherein the heat-generating component is an electronic processing unit.
20. The electrical device according to claim 10, wherein the heat-generating component is an electrical storage battery.
21. The heat-removal device according to claim 9, wherein the metallic thermal-interface material is a eutectic mixture of Bismuth, Indium, Tin and Gallium.
22. The heat-removal device according to claim 21, wherein the solid-to-liquid transition temperature is about 60 C., about 70 C., about 80 C., or about 90 C.
23. The heat-removal device according to claim 9, wherein the metallic thermal-interface material is a non-eutectic mixture of Bismuth, Indium, Tin and Gallium.
24. The heat-removal device according to claim 23, wherein the solid-to-liquid transition temperature is about 90 C.
25. The heat-removal device according to claim 24, wherein the metallic thermal-interface material has a liquid-to-solid transition temperature of about 70 C.
26. The heat-removal device according to claim 23, wherein the solid-to-liquid transition temperature is less than about 90 C. and the liquid-to-solid transition temperature is above about 70 C.
27. The electrical device according to claim 18, wherein the metallic thermal-interface material is a eutectic mixture of Bismuth, Indium, Tin and Gallium.
28. The electrical device according to claim 27, wherein the solid-to-liquid transition temperature is about 60 C., about 70 C., about 80 C., or about 90 C.
29. The electrical device according to claim 18, wherein the metallic thermal-interface material is a non-eutectic mixture of Bismuth, Indium, Tin and Gallium.
30. The electrical device according to claim 29, wherein the solid-to-liquid transition temperature is about 90 C.
31. The electrical device according to claim 30, wherein the metallic thermal-interface material has a liquid-to-solid transition temperature of about 70 C.
32. The electrical device according to claim 29, wherein the solid-to-liquid transition temperature is less than about 90 C. and the liquid-to-solid transition temperature is above about 70 C.
33. The electrical device according to claim 18, wherein the heat-generating component is an electronic processing unit.
34. The electrical device according to claim 18, wherein the heat-generating component is an electrical storage battery.
Description
BRIEF DESCRIPTION OF THE DRAWINGS
[0013] Referring to the drawings, wherein like numerals refer to like parts throughout the several views and this specification, aspects of presently disclosed principles are illustrated by way of example, and not by way of limitation.
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DETAILED DESCRIPTION
[0029] The following describes various principles related to metallic thermal-interface materials. More particularly, but not exclusively, some embodiments include devices and systems for transferring heat (e.g., for cooling heat-generating, electrical components) that incorporate such metallic thermal-interface materials. Some disclosed thermal-interface materials partially or wholly undergo phase transition within an expected range of operating temperatures. Nevertheless, components and systems having attributes that are different from those specific examples discussed herein can embody one or more presently disclosed principles, and can be used in applications not described herein in detail. Accordingly, such alternative embodiments also fall within the scope of this disclosure.
I. Overview
[0030] Concepts disclosed herein generally concern metallic thermal-interface materials, and in some respects, their application to heat-transfer components and use in heat-transfer systems. For example, some disclosed concepts pertain to systems, methods, and components to facilitate cooling of heat-dissipating components, in part by applying a metallic thermal-interface material to a surface of a heat-transfer component. In other respects, material composition and physical properties of disclosed metallic thermal-interface materials are described. And in still other respects, methods of manufacturing components that incorporate disclosed metallic thermal interface materials are described.
[0031] Referring now to
[0032] A working fluid enters the first evaporator 710, absorbing the heat Q.sub.in from the processing unit and exhausting a saturated mixture of vapor and liquid to the first vapor line 702, which then enters the second evaporator 720 and absorbs further heat Q.sub.in from another processing unit. The vapor exhausts from the second evaporator 720 to the second vapor line 703 and flows into the condenser 750, where the working fluid rejects latent heat and condenses to the liquid phase, which flows through the liquid conduit back to the first evaporator 710.
[0033]
[0034] As noted above, a heat-transfer component 120 can assume any of a variety for configurations. Although not so limited,
[0035] Like the heat-transfer component 120, the heat-generating component 110 can assume any of a variety of configurations. Although not so limited,
[0036] Referring still to
[0037] As described more fully below, some embodiments solder-bond the heat-transfer-component-contact region 132 of the thermal-interface material 130 to the surface 122 of the heat-transfer component 120 before assembling the heat-transfer component into thermal contact with the IHS 115, reducing or eliminating the first level of thermal-contact resistance (i.e., between the lower surface 122 and the upper surface of the thermal-interface material 132 (R.sub.c2 in
[0038] During operation of the heat-generating device 110 and the heat-transfer component 120, a temperature of the thermal-interface material 130 can approach or even exceed a melting-point temperature of the material (eutectic mixtures) or one or more constituents (non-eutectic mixtures) of the material. For example, a region 137 (
II. Thermal Interfaces
[0039] Referring now to
[0040] A second region 136 of material, positioned outward of the first region 137, partially or entirely encloses the first region and typically remains in a solid phase (sometimes referred to as a solidus phase). With some non-eutectic mixtures, one or more constituent components of the TIM in the second region 136 can melt while leaving one or more other constituent components in a solid phase. That is to say, the non-eutectic mixture can begin to melt and, according to a temperature of the TIM, its constituent components, and their relative volume, weight or mass percentages, a portion of the non-eutectic mixture can become a liquidus while a portion remains a solidus. For example, the meltable volume (liquidus) 135 can extend past the boundary 116/region 137.
[0041] Such embodiments are illustrated schematically in
[0042] For example,
[0043] By remaining a solidus during operation of the heat-generating component 110 and the heat-transfer component 120, the regions 142, 152 can inhibit leakage or seepage of the liquidus TIM 141, 151 from the interstitial gap between the surfaces 111, 122. Moreover, providing a solid (or a solidus-liquidus mixture) barrier encapsulating the melted volume 141, 151 can inhibit diffusion of oxygen to and throughout the melted TIM, inhibiting oxidation of the TIM and maintaining its thermal and other material characteristics.
[0044] In each of
[0045] In a multi-chip package, not shown, the region of solidus TIM can define a lattice extending around each region of liquidus (or mixture of liquidus/solidus) TIM. For example, each melted or meltable (e.g., softened mixture of liquidus and solidus) region can correspond to a given die in the multi-chip package. In such embodiments, the volume 135 of TIM that melts can again be coextensive with each region 137. In other embodiments, e.g., single-chip packages where the die defines one or more hot-spots or multi-chip packages where one or more of the plurality of dice defines one or more hot-spots, each volume 135 that melts can correspond to a given hot-spot location and shape, e.g., can be smaller than the region 137 of TIM that overlies a given die. In such embodiments, the second region 136 of the TIM that remains solidus (or a liquidus and solidus mixture) can extend around each meltable region 135 over-top a portion of each respective die. In still other embodiments, the meltable region 135 extends outward of a portion or all of the die 112, with the second region 136 wholly or partially enclosing the meltable region 135. In each of these alternative embodiments, the solidus portion of the TIM can inhibit seepage or leakage of the melted TIM while also inhibiting diffusion of oxygen into and through the melted (liquidus) TIM, inhibiting oxidation of the melted TIM and a corresponding degradation in thermal performance. Where the second region (or a portion thereof) has a mixture of liquidus and solidus, the viscosity of the solidus-liquidus mixture can exceed that of the liquidus in the region 135 and thus can inhibit seepage or leakage of the melted TIM while also inhibiting diffusion of oxygen into and through the melted (liquidus) TIM, inhibiting oxidation of the melted TIM and a corresponding degradation in thermal performance.
III. Heat-Transfer Components with Pre-Applied TIM
[0046] In some respects, disclosed principles pertain to heat-transfer components having layer of TIM applied to a heat-transfer surface before assembly of the heat-transfer component with a heat-generating (or a heat-absorbing) device.
[0047] Referring now to
[0048] At 310, the process 300 includes the act of masking a component surface. Taking the heat-transfer component 120 (
[0049] At 320 in
[0050] At 330, the metallic TIM (400 in
[0051] On cooling, a portion of the TIM forms an intermetallic bond with the heat-transfer component (see
[0052] A heat-transfer component with a solder-bonded layer of metallic thermal-interface material can be assembled with a heat-generating (or heat-absorbing) device in an arrangement as in
[0053] After this physically assembling the heat-transfer component with the heat-generating component, and before normal system operation, the interstitial layer of thermal-interface material and the bounding, opposed surfaces of the heat-generating (or heat-absorbing) device and heat-transfer component can be heated beyond a melting temperature of the thermal-interface material. For example, the assembly can be heated in an oven or a heat-generating device can be operated under a load sufficient to heat the TIM beyond its melting temperature.
[0054] This further cycle of heating can enhance thermal contact between the TIM and the heat-generating (or heat-absorbing) device, thus improving overall thermal contact between the heat-transfer component and the heat-generating (or heat-absorbing) device. For example, this further cycle of heating can allow excess TIM to fill any interstitial air gaps. Such further cycle of heating also can reduce a thickness of the interstitial space between the opposed surfaces of the heat-generating (or heat-absorbing) device and the heat-transfer component, as by allowing excess TIM to flow outwardly past a heat-transfer surface 431 of the heat-generating (or heat-absorbing) device, forming a ridge (or dam, analogous to the dam 134 shown in
IV. Metallic Thermal Interface Material Compositions and Properties
[0055] Disclosed metallic thermal-interface materials can incorporate eutectic and non-eutectic mixtures of Bismuth, Indium, Tin and Gallium. As understood by those of ordinary skill in the art, eutectic mixtures exhibit a melting-point temperature (or a narrow-band of temperatures over which melting occurs) that is below the melting point of each constituent component in the mixture, while non-eutectic mixtures melt over a broader range of temperatures. Adjusting the relative weight percent of each constituent component in a mixture of Bismuth, Indium, Tin and Gallium can correspondingly adjust the melting temperature (or range of temperatures for non-eutectic mixtures) of the mixture.
[0056] Some metallic TIM embodiments suitable for forming a solder-bond with a heat-transfer component as described herein have a eutectic melting point temperature of about 60 C. (e.g., between about 57 C. and about 63 C., such as, for example, between about 58 C. and about 61 C.), a eutectic melting point temperature of about 70 C. (e.g., between about 67 C. and about 73 C., such as, for example, between about 68 C. and about 71 C.), a eutectic melting point temperature of about 80 C. (e.g., between about 77 C. and about 83 C., such as, for example, between about 78 C. and about 81 C.), and a eutectic melting point temperature of about 90 C. (e.g., between about 87 C. and about 93 C., such as, for example, between about 88 C. and about 91 C.).
[0057] Some metallic TIM embodiments suitable for forming a solder-bond with a heat-transfer component as described herein are non-eutectic. Such non-eutectic TIMs exhibit a hysteresis-like range of phase-change temperatures. For example, some disclosed, non-eutectic metallic TIMs have a melting point temperature (e.g., where a negligible portion of solidus remains) of about 90 C. and a freezing point temperature (e.g., where a negligible portion of liquidus remains) of about 70 C. As noted above, some components of such a non-eutectic TIM begin to melt below about 90 C. (e.g., between about 75 C. and about 85 C., such as, for example about 85 C.). Similarly, some components of such a non-eutectic TIM begin to solidify above about C. (e.g., between about 75 C. and about 85 C., such as, for example about 85 C.).
[0058] In some disclosed alloys, a viscosity of a molten phase is very low and reduces a bond-line thickness between the base surface 122 and the upper surface 111 of the IHS by such a large degree that a thermal resistance between the base surface 122 and the upper surface 111 deteriorates compared to other disclosed alloys. Nevertheless, such alloys can be combined with one or more other materials that remain in a solid phase during operation of the heat-generating component, e.g., a powdered or other small-particle form of the other material, to increase a viscosity or to provide a lower-threshold bond-line thickness between the base surface 122 and the upper surface 111. Examples of such other materials include particle forms of ceramics, e.g., aluminum oxide, aluminum nitride, silicon carbide, diamond, zinc oxide, boron nitride, etc. Other examples of such other materials include particle forms of other metal alloys, e.g., alloys of copper or silver.
V. Other Embodiments
[0059] The embodiments described above generally concern metallic thermal-interface materials, some of which partially or wholly undergo phase transition within an expected range of operating temperatures. More particularly, but not exclusively, this disclosure pertains to devices and systems for transferring heat, e.g., for cooling heat-generating, electrical components, that incorporate such metallic thermal-interface materials.
[0060] Despite the description of certain details of metallic thermal-interface materials, as well as heat-transfer components and electrical devices that incorporate them, the previous description is provided to enable a person skilled in the art to make or use the disclosed principles. Embodiments other than those described above in detail are contemplated based on the principles disclosed herein, together with any attendant changes in configurations of the respective apparatus or changes in order of method acts described herein, without departing from the spirit or scope of this disclosure. Various modifications to the examples described herein will be readily apparent to those skilled in the art.
[0061] For example, heat-generating devices may be embodied other than as shown in
[0062] Further alternative embodiments are possible. For example, the description above provides details of a thermal-interface material soldered to a heat-transfer component prior to assembly of the heat-transfer component with a heat-generating component. In other embodiments, the thermal-interface material can be soldered to an outer surface (e.g., surface 117 in
[0063] Further, other system configurations and types incorporating metallic thermal-interface materials of the type described herein can be cooled or heated. For example, one or more electrical components in a 1U (or even a -U) server (or other electronic device, such as, for example, a 5G cellular radio, a power generation or transmission device) can be cooled by a heat-transfer device and a disclosed thermal-interface material can be applied within an interstitial gap between the heat-transfer device and the electrical component. Many other types of electrical devices, such as, for example, a graphics processor, a television, power electronics devices, communications transmission devices and other networking devices, among others, have heat-dissipating devices that can incorporate metallic thermal-interface materials as described. As but one particular example, one or more heat-dissipating components in a communications or other network device (e.g., a so-called 5G transmission device) can be cooled by a heat-transfer device incorporating a pre-applied metallic TIM. Similarly, some electrical storage batteries dissipate substantial amounts of heat while discharging or charging. For example, some batteries that can store substantial amounts of energy, e.g., a 5 kW-h to 50 kW-h battery, can be cooled by a system that incorporates a metallic thermal-interface material as described.
[0064] Directions and other relative references (e.g., up, down, top, bottom, left, right, rearward, forward, etc.) may be used to facilitate discussion of the drawings and principles herein, but are not intended to be limiting. For example, certain terms may be used such as up, down,, upper, lower, horizontal, vertical, left, right, and the like. Such terms are used, where applicable, to provide some clarity of description when dealing with relative relationships, particularly with respect to the illustrated embodiments. Such terms are not, however, intended to imply absolute relationships, positions, and/or orientations. For example, with respect to an object, an upper surface can become a lower surface simply by turning the object over. Nevertheless, it is still the same surface, and the object remains the same. As used herein, and/or means and or or, as well as and and or. Moreover, all patent and non-patent literature cited herein is hereby incorporated by reference in its entirety for all purposes.
[0065] And, those of ordinary skill in the art will appreciate that the exemplary embodiments disclosed herein can be adapted to various configurations and/or uses without departing from the disclosed principles. Applying the principles disclosed herein, it is possible to provide a wide variety of metallic thermal-interface materials and heat-transfer components incorporating such metallic thermal-interface materials, as well as related methods and systems. For example, the principles described above in connection with any particular example can be combined with the principles described in connection with another example described herein. Thus, all structural and functional equivalents to the features and method acts of the various embodiments described throughout the disclosure that are known or later come to be known to those of ordinary skill in the art are intended to be encompassed by the principles described and the features and acts claimed herein. Accordingly, neither the claims nor this detailed description shall be construed in a limiting sense, and following a review of this disclosure, those of ordinary skill in the art will appreciate the wide variety of components, devices, systems, and related methods that can be devised using the various concepts described herein.
[0066] Moreover, nothing disclosed herein is intended to be dedicated to the public regardless of whether such disclosure is explicitly recited in the claims. No claim feature is to be construed under the provisions of 35 USC 112(f), unless the feature is expressly recited using the phrase means for or step for.
[0067] The appended claims are not intended to be limited to the embodiments shown herein, but are to be accorded the full scope consistent with the language of the claims, wherein reference to a feature in the singular, such as by use of the article a or an is not intended to mean one and only one unless specifically so stated, but rather one or more. Further, in view of the many possible embodiments to which the disclosed principles can be applied, we reserve the right to claim any and all combinations of features and technologies described herein as understood by a person of ordinary skill in the art, including the right to claim, for example, all that comes within the scope and spirit of the foregoing description, as well as the combinations recited, literally and equivalently, in any claims presented anytime throughout prosecution of this application or any application claiming benefit of or priority from this application, and more particularly but not exclusively in the claims appended hereto.