Material for blocking crosstalk, optical assembly, and method for preparing material
10948672 ยท 2021-03-16
Assignee
Inventors
- Min ZHOU (Shenzhen, CN)
- Ning Cheng (Bridgewater, NJ, US)
- Zhenxing Liao (Wuhan, CN)
- Huafeng Lin (Shenzhen, CN)
Cpc classification
G02B6/4277
PHYSICS
G02B6/4215
PHYSICS
G02B5/204
PHYSICS
International classification
Abstract
A material for blocking crosstalk, an optical assembly, and a method for preparing the material are provided. The optical assembly includes an optical receive assembly, where a periphery of the optical receive assembly includes a transparent region and a non-transparent region; the transparent region is made of the material, where a first layer of film is located on a side opposite to an optical receiving direction, and a second layer of film is located on a side opposite to the optical receive assembly; and the non-transparent region is of an electrical-signal shielding structure.
Claims
1. A material for blocking crosstalk, the material comprising: a first layer of film; a nonconductive substrate; and a second layer of film, wherein the first layer of film and the second layer of film are respectively plated on two sides of the substrate, alternately arranged grids and grid lines are disposed on only an exterior surface of the first layer of film, and the first layer of film is non-hollowed-out.
2. The material according to claim 1, wherein the first layer of film comprises a composite transparent conductive oxide (TCO) thin film material comprising a TCO substrate material and a non-oxide material.
3. The material according to claim 1, wherein the second layer of film comprises at least two types of materials with different refractive indexes, wherein one of the at least two types of material comprises oxide or sulfide or a simple substance.
4. The material according to claim 2, wherein the TCO substrate material comprises molybdenum-doped indium oxide (IMO).
5. The material according to claim 2, wherein the composite TCO material is deposited on the substrate by means of spin coating or is affixed to the substrate.
6. The material according to claim 1, wherein the grids are obtained by performing optical embossing or optical lithography or photo etching on the composite TCO material.
7. The material according to claim 1, wherein an electromagnetic transmission rate and a light transmission rate of the first layer of film are adjustable.
8. The material according to claim 1, wherein an electromagnetic transmission rate and a light transmission rate of the first layer of film are determined according to the following formula:
9. A method for preparing a material for blocking crosstalk, the method comprising: plating a second layer of film on a first side of a nonconductive substrate, wherein the second layer of film can transmit light with a first wavelength and reflect light with a second wavelength; and attaching a composite transparent conductive oxide (TCO) thin film material to a second side of the substrate, and preparing grids on only an exterior surface of the composite TCO material, wherein the grids and grid lines are arranged alternately, to form a first layer of film that is non-hollowed-out; or preparing grids on only an exterior surface of a composite TCO material, wherein the grids and grid lines are arranged alternately, to form a first layer of film that is non-hollowed-out, and attaching the first layer of film to a second side of the substrate.
10. The method according to claim 9, wherein attaching the composite TCO material to the second side of the substrate further comprises: depositing the composite TCO material on the second side of the substrate by means of spin coating.
11. The method according to claim 9, wherein attaching the first layer of film to the second side of the substrate further comprises: affixing the first layer of film to the second side of the substrate.
12. The method according to claim 9, wherein preparing the grids on the surface of the composite TCO material further comprises: preparing the grids on the surface of the composite TCO material by optical embossing or optical lithography.
Description
BRIEF DESCRIPTION OF THE DRAWINGS
(1) To describe the technical solutions in the embodiments of the present invention more clearly, the following briefly describes the accompanying drawings required for describing the embodiments. Apparently, the accompanying drawings in the following description show merely some embodiments of the present invention, and a person of ordinary skill in the art may still derive other drawings from these accompanying drawings without creative efforts.
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DETAILED DESCRIPTION
(17) To make the objectives, technical solutions, and advantages of the present invention clearer, the following further describes the embodiments of the present invention in detail with reference to the accompanying drawings.
(18) The embodiments of the present invention mainly relate to a single-TO bidirectional optical sub-assembly, which is used to resolve a problem of insufficient receiving sensitivity. Insufficient receiving sensitivity is mainly caused by crosstalk impacts of a transmit signal on a received signal in the single-TO bidirectional optical sub-assembly. Electrical crosstalk is one of the crosstalk impacts, and optical crosstalk is another major type of crosstalk except the electrical crosstalk. For example, signals existing in an optical receive assembly of a single-TO bidirectional optical sub-assembly in an optical network unit (Optical Network Unit, ONU for short) in a gigabit-capable passive optical network (Gigabit-Capable Passive Optical Network, GPON for short) system include a 1490 nm received optical signal, a 1310 nm transmitted optical signal, a 2.5 G received electrical signal, and a 1.25 G transmitted electrical signal. The 1310 nm transmitted optical signal causes optical crosstalk to the 1490 nm received optical signal, and the 1.25 G transmitted electrical signal causes electrical crosstalk to the 2.5 G received electrical signal. Therefore, a technical measure that can shield the 1310 nm optical signal and the 1.25 G electrical signal needs to be taken for the 1490 nm optical signal and the 2.5 G electrical signal. In comparison with a conventional manner of shielding electrical crosstalk by using a metal material provided with a light through-hole and implementing optical crosstalk resistance by using a WDM with an oblique angle or by using a reverse skewed slot on a base, in the embodiments of the present invention, a material for blocking crosstalk is used as a transparent region of an optical receive assembly, to function as an electromagnetic shield layer, and an electrical-signal shielding structure is used as a non-transparent region, to function as an electromagnetic shield layer. The material for blocking crosstalk not only can shield an electrical signal, but can also transmit light with a receive optical wavelength and reflect light with a transmit optical wavelength. This ensures that light and electricity are completely isolated, no electromagnetic leakage exists, and a better shielding effect is achieved, thereby effectively improving receiving sensitivity and receive power.
Embodiment 1
(19) Referring to
(20) The first layer of film 201 is used to transmit light and shield an electrical crosstalk signal, and the second layer of film 203 is used to shield an optical crosstalk signal. The second layer of film 203 may use various materials in the prior art that are used to plate a film, provided that the materials can transmit light with the first wavelength and reflect light with the second wavelength.
(21) Specifically, the second layer of film 203 includes at least two types of materials with different refractive indexes, where any type of material may be oxide, sulfide, a simple substance, or the like. The oxide may be tantalum oxide, and the simple substance may be silicon, or the like. This is not specifically limited in this embodiment.
(22) In addition, ideally, that the second layer of film can transmit light with the first wavelength means that the light with the first wavelength can be completely transmitted through the second layer of film. However, in actual application, the light with the first wavelength may also be partially transmitted, for example, 90% or 80% of the light with the first wavelength is transmitted through the second layer of film, so as to meet different accuracy requirements and cost requirements. No specific limitation is set herein. Ideally, that the second layer of film can reflect light with the second wavelength means that the light with the second wavelength can be completely reflected by the second layer of film without being transmitted. However, in actual application, the light with the second wavelength may also be partially reflected. For example, 90% or 80% of the light with the second wavelength is reflected, and there is still a small port of light being transmitted, but a level of optical crosstalk is extremely low, and is within an allowed range; therefore, receiving is not affected.
(23) It should be understood that the foregoing first wavelength and second wavelength are merely examples. In actual application, the first wavelength and the second wavelength may be specified as required. When the material for blocking crosstalk is applied in different PON systems, and transmit wavelengths or receive wavelengths are different, materials and thicknesses of the second layer of film may also be different, and may be designed according to actual requirements.
(24) Preferably, the first wavelength may be a receive optical wavelength, and the second wavelength may be a transmit optical wavelength.
(25) The foregoing material provided in this embodiment may be used as a transparent region in an optical receive assembly of a single-TO bidirectional optical sub-assembly. This can implement that light and electricity are completely isolated, no electromagnetic leakage exists, and a good shielding effect is achieved, thereby improving receiving sensitivity and receive power. When the material is used as the transparent region in the optical receive assembly of the single-TO bidirectional optical sub-assembly, the first layer of film 201 is located on a side opposite to an optical receiving direction, and the second layer of film 203 is located on a side opposite to the optical receive assembly.
(26) Optionally, the first layer of film may consist of a composite transparent conductive oxide thin film (Transparent Conductive Oxide, TCO for short) material, and the composite TCO material includes a TCO substrate material and non-oxide.
(27) There may be multiple options for the TCO substrate material, for example, tin-doped indium oxide (In.sub.2O.sub.3:Sn, ITO for short), molybdenum-doped indium oxide (In.sub.2O.sub.3:Mo, IMO for short), fluorine-doped tin oxide (SnO.sub.2:F, FTO for short), aluminum-doped zinc oxide (ZnO:AI, ZAO for short), and the like. Preferably, the IMO with a highest infrared transmission rate may be selected.
(28) There are also multiple types of non-oxide, for example, zinc sulfide (ZnS), zinc selenide (ZnSe), and the like. This embodiment sets no specific limitation thereto. A cut-off wavelength of the material may be increased by doping non-oxide in the TCO substrate material.
(29) Optionally, the composite TCO material may be deposited on the substrate by means of spin coating or be affixed to the substrate.
(30) Optionally, the grids may be obtained by performing optical embossing or optical lithography on the composite TCO material.
(31) The grids may be in multiple shapes, and this is not limited in this embodiment. For example, the grids may be squares, rectangles, rhombuses, hexagons, and the like. Sizes of the grids on the first layer of film may be the same, or may be different, and this is not limited herein.
(32) Optionally, the grids may be set to be of a same size and a same shape and be arranged evenly.
(33) In addition, a thickness of the grid lines is greater than a thickness of the grids. Therefore, the grids are of a concave structure.
(34) Optionally, an electromagnetic transmission rate and a light transmission rate of the first layer of film are adjustable.
(35) Optionally, the electromagnetic transmission rate and the light transmission rate of the first layer of film may meet the following formula:
(36)
where
(37) T is the electromagnetic transmission rate of the first layer of film, g is a normalized admittance of the first layer of film, V.sub.0 is a resonance frequency, n.sub.0 is a refractive index of an incident material, n is an equivalent refractive index of the first layer of film, is a width of the grid lines, is a node constant of the composite TCO material, K is a normalization coefficient, is a width of the grids, d is a thickness of the first layer of film, v is a frequency of an incident electromagnetic wave, t is the light transmission rate of the first layer of film, and is a light transmittance of the first layer of film.
(38) In this embodiment, the grids are non-hollowed-out. There is a specific thickness ratio between the grids and the grid lines, and the thickness ratio may be designed and adjustable. None of the parameters in the foregoing formula is fixed, and the parameters may be designed and adjusted as required. For example, when the electromagnetic transmission rate T of the first layer of film is already known, the width of the grids is calculated according to T and another determined parameter, so as to design corresponding grids. For another example, when the thickness d of the grids is already known, the electromagnetic transmission rate T of the first layer of film is calculated according to d and another determined parameter, so that the electromagnetic transmission rate of the first layer of film is adjustable.
(39) For example, to shield a 1.25 G electrical signal, a substrate material including IMO and ZnS is used, where a thickness and electromagnetic shielding efficiency of the substrate material are respectively 100 um and 35 dB, and an infrared light transmission rate is set to 95%. Then, an estimated effective grid width is 150 um, and a grid cycle is 450 um. When the grid cycle is scaled down, infrared light transmission performance is not changed, and electromagnetic shielding performance is increased.
(40) The material for blocking crosstalk provided in this embodiment may be referred to as an interference blocking film (Interference Blocking Film, IBF for short). Referring to
(41) Referring to
(42) By using the foregoing material provided in this embodiment, it can be ensured that light and electricity are completely isolated, no electromagnetic leakage exists, and a better shielding effect is achieved, thereby improving receiving sensitivity and receive power. Moreover, because no through-hole needs to be provided on an optical receive assembly, a problem that an electromagnetic shielding effect and an optical path alignment difficulty are affected by a hole size is avoided. In addition, light-electricity isolation is implemented on one piece of membrane; therefore, there is a small quantity of technical items and packaging processes, costs are lower, and a TO structure is simple. This reduces manufacturing costs, facilitates large-scale production, and improves practicability.
Embodiment 2
(43) Referring to
(44) 601: Plate a second layer of film on one side of a substrate, where the second layer of film includes at least two types of materials with different refractive indexes. Any type of material may be oxide, sulfide, a simple substance, or the like. The oxide may be tantalum oxide, and the simple substance may be silicon, or the like. This is not specifically limited in this embodiment.
(45) 602: Attach a composite TCO material to another side of the substrate. For details about the TCO material, refer to descriptions in Embodiment 1. Details are not described herein again.
(46) This step may include:
(47) depositing the composite TCO material on the another side of the substrate by means of spin coating.
(48) 603: Prepare grids on a surface of the composite TCO material, where the grids and grid lines are arranged alternately, to form a first layer of film that is non-hollowed-out.
(49) Referring to
(50) 701: Plate a second layer of film on one side of a substrate, where the second layer of film includes at least two types of materials with different refractive indexes. Any type of material may be oxide, sulfide, a simple substance, or the like. The oxide may be tantalum oxide, and the simple substance may be silicon, or the like. This is not specifically limited in this embodiment.
(51) 702: Prepare grids on a surface of a composite TCO material, where the grids and grid lines are arranged alternately, to form a first layer of film that is non-hollowed-out. For details about the TCO material, refer to descriptions in Embodiment 1. Details are not described herein again.
(52) 703: Attach the first layer of film to another side of the substrate.
(53) This step may include:
(54) affixing the first layer of film to the another side of the substrate.
(55) A material for blocking crosstalk may be made by using either of the foregoing methods. The material may be used as a transparent region in an optical receive assembly of a single-TO bidirectional optical sub-assembly. This can implement that light and electricity are completely isolated, no electromagnetic leakage exists, and a good shielding effect is achieved, thereby improving receiving sensitivity and receive power. When the material is used as the transparent region in the optical receive assembly of the single-TO bidirectional optical sub-assembly, the first layer of film is located on a side opposite to an optical receiving direction, and the second layer of film is located on a side opposite to the optical receive assembly.
(56) In either of the foregoing methods, optionally, the preparing grids on a surface of the composite TCO material may include:
(57) preparing the grids on the surface of the composite TCO material by means of optical embossing or optical lithography.
(58) A material for blocking crosstalk may be made by using either of the foregoing methods. Referring to
(59) It should be understood that, in the foregoing example, the wavelengths of 1490 nm and 1310 nm are merely examples for illustration. In actual application, Structure parameters may be designed for different wavelengths, to optimize electromagnetic shielding effectiveness and light transmission performance of a thin film, so as to adapt to application in a product. For grids at a hundred-micron scale, an optical embossing technology is already sufficient, and optical lithography is not needed. Therefore, in the present invention, an extremely low requirement is posed on embossing precision, and costs of molds are extremely low.
(60) A material for blocking crosstalk made by using either of the foregoing methods provided in the embodiments may be used as a transparent region in an optical receive assembly of a single-TO bidirectional optical sub-assembly. This can implement that light and electricity are completely isolated, no electromagnetic leakage exists, and a good shielding effect is achieved, thereby improving receiving sensitivity and receive power. Moreover, because no through-hole needs to be provided, a problem that an electromagnetic shielding effect and an optical path alignment difficulty are affected by a hole size is avoided. In addition, light-electricity isolation is implemented on one piece of membrane; therefore, there is a small quantity of technical items and packaging processes, costs are much lower, and a TO structure is simple. This reduces manufacturing costs, facilitates large-scale production, and improves practicability.
Embodiment 3
(61) Referring to
(62) A periphery of the optical receive assembly 901 includes a transparent region 902 and a non-transparent region 903.
(63) The transparent region 902 is made of the material for blocking crosstalk according to Embodiment 1. The material includes a first layer of film 902a, a substrate 902b, and a second layer of film 902c. The first layer of film 902a is located on a side opposite to an optical receiving direction, and the second layer of film 902c is located on a side opposite to the optical receive assembly. The non-transparent region 903 is of an electrical-signal shielding structure.
(64) For a structure of the material for blocking crosstalk, refer to descriptions in Embodiment 1. Details are not described herein again. For ease of description, the material for blocking crosstalk may be referred to as an IBF.
(65) The second layer of film 902c can transmit light with a first wavelength and reflect light with a second wavelength. Preferably, the first wavelength is a receive optical wavelength, and the second wavelength is a transmit optical wavelength. There may multiple combinations of the receive optical wavelength and the transmit optical wavelength, which are not limited herein. For example, the combination may be as follows: the transmit optical wavelength is 1310 nm and the receive optical wavelength is 1550 nm, or the transmit optical wavelength is 850 nm and the receive optical wavelength is 1310 nm, or the transmit optical wavelength is 1310 nm and the receive optical wavelength is 1490 nm, or the like. For different combinations, a parameter of the film is changed, to meet actual application need.
(66) Preferably, the non-transparent region and the IBF may be seamlessly connected (for example, completely adjoined), to implement full enclosure.
(67) The non-transparent region may be any material that can shield an electrical signal. Specifically, the non-transparent region may use a metal component, which includes but is not limited to: a metal shell, a metal base, a metal block, a metal thin film, or the like. Alternatively, the non-transparent region may use a light-proof non-metal material, a light-proof composite material, or the like. This embodiment sets no limitation thereto.
(68) Optionally, the foregoing non-transparent region and a base of the optical assembly may be integrated as one, and the optical receive assembly is embedded in the non-transparent region.
(69) Optionally, the foregoing non-transparent region may be of a sleeve-type electrical-signal shielding structure, and fits over the periphery of the optical receive assembly and is disposed on a base of the optical assembly.
(70) The optical receive assembly 901 may include a PD and a trans-impedance amplifier (Trans-Impedance Amplifier, TIA for short). The optical assembly may be specifically a single-TO bidirectional optical sub-assembly, and further includes an optical transmit assembly, a TO cover, and the like.
(71) Referring to
(72) By using the foregoing optical assembly provided in this embodiment, it can be ensured that light and electricity are completely isolated, no electromagnetic leakage exists, and a better shielding effect is achieved, thereby improving receiving sensitivity and receive power. Moreover, because no through-hole needs to be provided, a problem that an electromagnetic shielding effect and an optical path alignment difficulty are affected by a hole size is avoided. In addition, light-electricity isolation is implemented on one piece of membrane IBF; therefore, there is a small quantity of technical items and packaging processes, costs are much lower, and a TO structure is simple. This reduces manufacturing costs, facilitates large-scale production, and improves practicability.
Embodiment 4
(73) Referring to
(74) The transparent region 1103 is made of the material for blocking crosstalk according to Embodiment 1. The material includes a first layer of film, a substrate, and a second layer of film. The first layer of film is located on a side opposite to an optical receiving direction, and the second layer of film is located on a side opposite to the optical receive assembly. The non-transparent region 1102 is of an electrical-signal shielding structure.
(75) For a structure of the material for blocking crosstalk, reference may be made to descriptions in Embodiment 1. Details are not described herein again.
(76) Referring to
(77) Referring to
(78) In the foregoing optical assembly provided in this embodiment, a non-transparent region and a base are integrated as one, and an optical receive assembly is embedded in the non-transparent region. This ensures that light and electricity are completely isolated, no electromagnetic leakage exists, and a better shielding effect is achieved, thereby improving receiving sensitivity and receive power. Moreover, because no through-hole needs to be provided, a problem that an electromagnetic shielding effect and an optical path alignment difficulty are affected by a hole size is avoided. In addition, light-electricity isolation is implemented on one piece of membrane IBF; therefore, there is a small quantity of technical items and packaging processes, costs are much lower, and a TO structure is simple. This reduces manufacturing costs, facilitates large-scale production, and improves practicability.
Embodiment 5
(79) Referring to
(80) The transparent region 1403 is the material for blocking crosstalk according to Embodiment 1. The material includes a first layer of film, a substrate, and a second layer of film. The first layer of film is located on a side opposite to an optical receiving direction, and the second layer of film is located on a side opposite to the optical receive assembly. The non-transparent region 1404 is of an electrical-signal shielding structure.
(81) Referring to
(82) In the foregoing optical assembly provided in this embodiment, a non-transparent region is of a sleeve-type electrical-signal shielding structure, which covers a periphery of an optical receive assembly and is disposed on a base. This ensures that light and electricity are completely isolated, no electromagnetic leakage exists, and a better shielding effect is achieved, thereby improving receiving sensitivity and receive power. Moreover, because no through-hole needs to be provided, a problem that an electromagnetic shielding effect and an optical path alignment difficulty are affected by a hole size is avoided. In addition, light-electricity isolation is implemented on one piece of membrane IBF; therefore, there is a small quantity of technical items and packaging processes, costs are much lower, and a TO structure is simple. This reduces manufacturing costs, facilitates large-scale production, and improves practicability.
(83) A person of ordinary skill in the art may understand that all or some of the steps of the embodiments may be implemented by hardware or a program instructing related hardware. The program may be stored in a computer-readable storage medium. The storage medium may include: a read-only memory, a magnetic disk, or an optical disc.
(84) The foregoing descriptions are merely examples of embodiments of the present invention, but are not intended to limit the present invention. Any modification, equivalent replacement, and improvement made without departing from the spirit and principle of the present invention shall fall within the protection scope of the present invention.