Method of fabricating MEMS devices using plasma etching and device therefor

Abstract

A method for fabricating a MEMS sensor device. The method can include providing a substrate, forming an IC layer overlying the substrate, forming an oxide layer overlying the IC layer, forming a metal layer coupled to the IC layer through the oxide layer, forming a MEMS layer having a pair of designated sense electrode portions and a designated proof mass portion overlying the oxide layer, forming a via structure within each of the designated sense electrode portions, and etching the MEMS layer to form a pair of sense electrodes and a proof mass from the designated sense electrode portions and proof mass portions, respectively. The via structure can include a ground post and the proof mass can include a sense comb. The MEMS sensor device formed using this method can result is more well-defined edges of the proof mass structure.

Claims

1. A MEMS device, the device comprising: a substrate member; an IC (Integrated Circuit) layer overlying the substrate member; an oxide layer overlying the IC layer comprising a pair of anchor portions; a metal layer coupled to the IC layer through the oxide layer; a silicon MEMS layer disposed above the oxide layer, wherein the silicon MEMS layer comprises a first portion and a second portion separated by a void in the silicon MEMS layer, wherein the first portion comprises a pair of designated stationary sense electrode portions, wherein each designated stationary sense electrode portion is respectively disposed above and upon one anchor portion of the pair of anchor portions, wherein the second portion comprises a movable proof mass portion, wherein a top-most surface of the first portion is in a same plane as a top-most surface of the second portion, and wherein a bottom-most surface of the first portion is in a same plane as a bottom-most surface of the second portion; wherein a ground post is formed in a via structure formed within at least one designated stationary sense electrode portion of the pair of designated stationary sense electrode portions; and a cap layer disposed on top of the silicon MEMS layer to thereby overlie at least the second portion of the MEMS layer, wherein the cap layer comprises a first plurality of stops that are disposed above and vertically aligned to the pair of designated stationary sense electrode portions and the pair of anchor portions.

2. The device of claim 1 wherein the MEMS device comprises a device selected from a group consisting of: an accelerometer and a gyroscope.

3. The device of claim 1 wherein the pair of designated stationary sense electrode portions are anchored to the oxide layer.

4. The device of claim 1 wherein a first stop from the first plurality of stops in the cap layer is initially disposed above, but not in contact with, at least a designated stationary sense electrode portion from the pair of designated sense electrode portions.

5. The device of claim 4 wherein a second stop from the first plurality of stops in the cap layer is initially disposed above, but not in contact with, the movable proof mass portion.

6. The device of claim 5 wherein a height of the first stop and a height of the second stop are substantially similar.

7. The device of claim 1 wherein the via structure extends into the oxide layer and reaches a metallic layer.

8. The device of claim 1 wherein the pair of designated stationary sense electrode portions are disposed on either side of the movable proof mass portion.

9. The device of claim 1 wherein the movable proof mass portion comprises a pair of proof masses; and wherein the cap layer comprises a second plurality of stops that are disposed above, but not in contact with the pair of proof masses.

10. The device of claim 1 wherein the movable proof mass portion comprises a pair of proof masses; and wherein the oxide layer comprises a pair of stops that are disposed below, but not in contact with the pair of proof masses.

11. A MEMS device, the device comprising: a substrate member; an IC (Integrated Circuit) layer overlying the substrate member; an oxide layer overlying the IC layer comprising a pair of anchor portions; a metal layer coupled to the IC layer through the oxide layer; a silicon MEMS layer overlying the oxide layer, wherein the silicon MEMS layer comprises a first portion having a pair of designated portions anchored to at least the pair of anchor portions of the oxide layer and a second portion having a proof mass portion configured to move relative to the oxide layer, wherein the first portion and the second portion are formed from etching a silicon material layer, wherein a top-most surface of the first portion is in a same plane as a top-most surface of the second portion, and wherein a bottom-most surface of the first portion is in a same plane as a bottom-most surface of the second portion, wherein the first portion is laterally separated from the second portion; wherein a ground post is formed in a via structure formed within at least one designated portion of the pair of designated portions anchored to an ancor portion of the pair of anchor portions of the oxide layer; and a cap layer overlying the silicon MEMS layer, wherein the cap layer comprises a first plurality of stops that are disposed above and vertically aligned the pair of designated portions and to the pair of anchor portions of the oxide layer.

12. The device of claim 11 wherein the MEMS device comprises a device selected from a group consisting of: an accelerometer and a gyroscope.

13. The device of claim 11 wherein the pair of designated portions are anchored to the oxide layer.

14. The device of claim 11 wherein a first stop from the first plurality of stops in the cap layer is initially disposed above, but not in contact with, at least a designated portion from the pair of designated portions.

15. The device of claim 14 wherein a second stop from the first plurality of stops in the cap layer is initially disposed above, but not in contact with, the movable proof mass portion.

16. The device of claim 15 wherein a height of the first stop and a height of the second stop are substantially similar.

17. The device of claim 11 wherein the via structure extends into the oxide layer and reaches a metallic layer.

18. The device of claim 11 wherein the pair of designated portions are disposed on either side of the second portion.

19. The device of claim 11 wherein the proof mass portion comprises a pair of proof masses; and wherein the cap layer comprises a second plurality of stops that are disposed above the pair of proof masses.

20. The device of claim 11 wherein the proof mass portion comprises a pair of proof masses; and wherein the oxide layer comprises a pair of stops that are disposed below, but not in contact with the pair of proof masses.

Description

BRIEF DESCRIPTION OF THE DRAWINGS

(1) In order to more fully understand the present invention, reference is made to the accompanying drawings. Understanding that these drawings are not to be considered limitations in the scope of the invention, the presently described embodiments and the presently understood best mode of the invention are described with additional detail through use of the accompanying drawings in which:

(2) FIG. 1A shows an SEM (Scanning Electron Microscope) image of a proof mass edge according to an embodiment of the present invention.

(3) FIG. 1B shows a simplified diagram illustrating a cross-sectional view of a MEMS device according to an embodiment of the present invention.

(4) FIG. 2A shows an SEM (Scanning Electron Microscope) image of a proof mass edge according to an embodiment of the present invention.

(5) FIG. 2B shows a simplified diagram illustrating a cross-sectional view of MEMS device according to an embodiment of the present invention.

(6) FIGS. 3A-B show simplified diagrams illustrating a cross-sectional views of a MEMS device.

(7) FIGS. 4A-B shows simplified diagrams illustrating a cross-sectional view of a MEMS device according to an embodiment of the present invention.

(8) FIG. 5 shows a simplified flow diagram illustrating a method of fabricating a MEMS device according to an embodiment of the present invention.

DETAILED DESCRIPTION OF THE INVENTION

(9) The present invention is directed to MEMS (Micro-Electro-Mechanical-Systems). More specifically, embodiments of the invention provide methods for fabricating an integrated MEMS device, including MEMS sensors and the like, and a resulting device structure. Merely by way of example, the MEMS device can include at least an accelerometer, a gyroscope, a magnetic sensor, a pressure sensor, a microphone, a humidity sensor, a temperature sensor, a chemical sensor, a biosensor, an inertial sensor, and others. But it will be recognized that the invention has a much greater range of applicability.

(10) FIG. 1A shows an SEM (Scanning Electron Microscope) image 100 of a proof mass edge according to an embodiment of the present invention. This image shows an edge portion of a proof mass structure for a MEMS inertial sensor. As shown, the edge shows a serious etching defects when a MEMS via process is not included. According to an embodiment, these kinds of defects can arise from performing a MEMS etching process on a silicon layer that makes all of the MEMS silicon components, including moving and floating fixed parts.

(11) FIG. 1B shows a simplified diagram illustrating a cross-sectional view 110 of MEMS device according to an embodiment of the present invention. This cross-sectional diagram shows a MEMS sensor structure that corresponds to the image shown in FIG. 1A. As shown, the MEMS sensor can include a sense comb, which can be a portion of or coupled to a proof mass 120, and a pair of sense electrodes 130 and 140 formed overlying an oxide layer 150. This oxide layer can be deposited overlying a processed IC layer and metal routing 160 (shown in figure) can be coupled to the IC layer through the oxide layer 130. Here, the sense electrodes 130 and 140 are fixed components and the sense comb (coupled to proof mass 120) is a moving component. In this example, the sense electrodes 130 and 140 are not configured with embodiments of the present invention.

(12) FIG. 2A shows an SEM (Scanning Electron Microscope) image 200 of a proof mass edge according to an embodiment of the present invention. This image shows another edge portion of a proof mass structure for a MEMS inertial sensor. As shown, the edge shows a well-defined form when a MEMS via process is included in the fabrication steps.

(13) FIG. 2B shows a simplified diagram illustrating a cross-sectional view 210 of MEMS device according to an embodiment of the present invention. This cross-sectional diagram shows a MEMS sensor 202 structure that corresponds to the image shown in FIG. 2A. Similar to the structure of FIG. 1B, the MEMS sensor can include a sense comb, which can be a portion of or coupled to a proof mass 220, and a pair of sense electrodes 230 and 240 formed overlying an oxide layer 250. This oxide layer 250 can also be deposited overlying a processed IC layer 290 and metal routing 260 (partly shown in figure) can be coupled to the IC layer through the oxide layer. In an embodiment, the sense electrodes 230 and 240 are configured with via structures 270 and 280, which run through the length of the sense electrodes 230 and 240 are coupled to another metal portion within the oxide layer. In an embodiment, this via is a ground post to substrate that provides a grounding path to substrate that provides for an improved MEMS etching profile, when the via process is performed prior to the MEMS Si etching process. The ground path can also be provided through a self-test portion.

(14) Embodiments of the present invention also provide a means to further improve the reliability of such MEMS structural components. Initially, the inventors considered it desirable to use hard stop limits on the movements of various portions of the MEMS device. As illustrated in FIG. 3A, these were embodied as stoppers 300 in a capping layer 320 above portions 310 of the MEMS layer 330 that move. In various embodiments, the stoppers 300 help prevent portions 310 from moving beyond a safe displacement amount.

(15) In the embodiment in FIG. 3B, the capping layer 320 is illustrated under an external stress 340. As can be seen, in region 350, capping layer 320 can physically touch MEMS layer 330 and at region 360, MEMS layer 300 can physically touch the semiconductor substrate 370. Such repeated contact is believed to contribute to failure of the MEMS device or the underlying contact layers 380. In some experiments conducted by the inventors, capping layer 320 has been observed to bow-inwards by as much as about 1.8 um for a 300 um center to edge capping layer 320, although for different sizes for capping layer, other displacements are expected.

(16) FIGS. 4A-B illustrate various embodiments of the present invention. More specifically, similar to FIG. 2, a MEMS layer 430 has a first portion having a pair of designated sense electrode portions 432 and 442 (also referred to as anchored portions or anchored regions) and a second portion having a proof mass portion 451, wherein the first portion is separated from the second portion. In FIG. 4A, these were stoppers 400 in a capping layer 420 above movable portions 410 of the MEMS layer 430 are illustrated. As described above, stoppers 400 help prevent portions 410 from moving beyond a safe displacement amount. Additionally, stoppers 405 and 415 are also illustrated, above anchor portions 435 and 445 of MEMS layer 430. In some embodiments, anchor point 435 may be an anchor to a sense electrode 432 of MEMS layer 430 on substrate 470, anchor point 445 may be an anchor to a sense electrode 442, as was illustrated above, or the like. Anchor points 435 and 445 are coupled to via structures 432 and 442, which are ground posts that provide a grounding path to substrate.

(17) In the embodiment in FIG. 4B, the capping layer 420 is illustrated under an external stress 440. As can be seen, in region 450, capping layer 420 may slightly touch MEMS layer 430 and at region 460, MEMS layer 400 typically does not touch the semiconductor substrate 470. Instead, as can be seen, stopper 405 contacts anchor portion 435 and stopper 415 contacts anchor portion 445. As anchor portions 435 and 445 are solidly coupled to semiconductor substrate 470, capping layer 420 will deflect to a smaller degree, in response to external stress 440. More significantly, as can be seen in FIG. 4B, the movable portions of MEMS layer 430 are under significantly less stress, as illustrated in FIG. 3B.

(18) In various embodiments, stoppers 400 are similar in height as stopper 405 and 415, as is illustrated in FIG. 4A. In other embodiments, stopper 400 may taller or shorter than stopper 405 and 415, depending upon specific engineering requirements.

(19) As can be seen, the various embodiments described above promote reliability for the MEMS device. Because portions of such MEMS device are flexible, they are prone to manufacturing forces, to internal wear and tear forces and to external forces. Some embodiments may include some, but not necessarily all the features described above in advantageous combination to promote reliability.

(20) FIG. 5 is a simplified flow diagram illustrating a method for fabricating a MEMS device according to an embodiment of the present invention. As shown, method 500 can be briefly summarized as follows: 501. Start; 502. Provide a substrate member; 503. Form an IC layer overlying the substrate member; 504. Form an oxide layer overlying the IC layer; 505. Form a metal layer electrically coupled to the IC layer through the oxide layer; 506. Form a MEMS layer having designated sense electrode pair and proof mass; 507. Form a via structure within the designated sense electrodes; 508. Etch the MEMS layer to form sense electrode pair and proof mass; and 509. Perform additional steps as necessary.

(21) In an embodiment, the present invention provides a method for fabricating an MEMS sensor device. The method can include the following steps: providing a substrate, forming an IC layer overlying the substrate, forming an oxide layer overlying the IC layer, forming a metal layer coupled to the IC layer through the oxide layer, forming a MEMS layer having a pair of designated sense electrode portions and a designated proof mass portion overlying the oxide layer, forming a via structure within each of the designated sense electrode portions, and etching the MEMS layer to form a pair of sense electrodes and a proof mass from the designated sense electrode portions and proof mass portions, respectively. The via structure can include a ground post and the proof mass can include a sense comb. The MEMS sensor device formed using this method can result is more well-defined edges of the proof mass structure. Additional steps can be performed as necessary.

(22) In various specific embodiments, the following method steps can be taken. Providing the substrate member can include providing a silicon substrate member. Forming the IC layer can include forming a CMOS-IC layer. Forming the oxide layer can include forming a silicon oxide layer. Forming the metal layer can include forming a CMOS metal layer. Forming the MEMS layer can include forming a silicon MEMs layer. Forming the via structure can include forming the ground post coupled to the via structure. The process for etching the MEMS layer can include a wet etching process, a dry etching process, or the like.

(23) In a specific embodiment, etching the MEMS layer can include forming an inertial sensor, an accelerometer, a gyroscope, a piezo-resistive sensor, or the like. Etching the MEMS layer can include forming the pair of sense electrodes and the proof mass in such a manner that the proof mass is characterized by a well-defined and controlled profile. The pair of sense electrodes can be anchored to an oxide layer of the MEMS device. Those of ordinary skill in the art will recognize other variations, modifications, and alternatives.

(24) In an embodiment, the present invention provides a method for fabricating a MEMS device with improved MEMS sensor structural definition. The method can include the following steps: providing a silicon substrate member, forming an IC (Integrated Circuit) layer overlying the substrate member, forming an oxide layer overlying the IC layer, forming a metal layer coupled to the IC layer through the oxide layer, forming a MEMS layer overlying the oxide layer, forming a forming a grounding path from the MEMS layer to the silicon substrate member, and etching the MEMS layer to form a MEMS sensor.

(25) In a specific embodiment, the forming of the grounding path includes forming a ground post through a portion of the MEMS layer and a portion of the oxide layer. This ground post is coupled to a portion of the metal layer, which is grounded to the silicon substrate. Also, the forming of the ground post can include forming a via structure within a portion of the MEMS layer. This via structure can be coupled to a portion of the metal layer, which is grounded to the silicon substrate.

(26) In a specific embodiment, the forming of the MEMS sensor includes forming a pair of sense electrodes and a proof mass. The grounding path can include a ground post through each of the sense electrodes. Each ground post can be coupled to a portion of the metal layer, which is grounded to the silicon substrate. Also, the etching of the MEMS layer to form a pair of sense electrodes and a proof mass can include electrically separating portions of the MEMS layer. Of course, there can be other variations, modifications, and alternatives.

(27) In an embodiment, the present invention provides a method of fabricating a MEMS device. This method can include providing a silicon substrate member, forming an IC (Integrated Circuit) layer overlying the substrate member, forming an oxide layer overlying the IC layer, forming a metal layer coupled to the IC layer through the oxide layer, and forming a MEMS layer overlying the oxide layer. The MEMS layer can be configured with one or more designated fixed portions and one or more designated moving portions. The method can further include forming a forming a grounding path from the MEMS layer to the silicon substrate member. The grounding path can configured through the one or more designated fixed portions. With the grounding path configured prior to MEMS etching, the MEMS layer can then be patterned to form a MEMS sensor. The MEMS sensor includes one or more fixed portions formed from the one or more designated fixed portions and one or more moving portions formed from the one or more designated moving portions.

(28) In a specific embodiment, the forming of the grounding path includes forming a ground post through the one or more designated fixed portions and a portion of the oxide layer. The ground post is coupled to a portion of the metal layer, which is grounded to the silicon substrate. Forming the ground post can include forming a via structure within the one or more designated fixed portions. The via structure can be coupled to a portion of the metal layer, which is grounded to the silicon substrate. The via structure can extend into the oxide layer and can be configured to reach a metallic layer. A metal material can be disposed within the via structure in contact with the metallic layer to form the ground post.

(29) In a specific embodiment, the method of fabricating the MEMS device can include forming a cap layer having a plurality of stops. Also, the cap layer can be disposed on top of the MEMS layer to thereby encapsulate the MEMS layer. At least one of the plurality of stops in the cap layer can be initially disposed above, but not in contact with, at least a sense electrode from the pair of sense electrodes. At least one of the plurality of stops in the cap layer can be initially disposed above, but not in vontact with, the proof mass.

(30) Embodiments of the present invention provide a means to improve an etching process used to define a MEMS layer to form MEMS structural components. In conventional embodiments, it was not considered necessary to connect the MEMS conductive moving structures before patterning (i.e. MEMS etching process). By connecting the conductive material to a ground post through a via structure, the pattering of these structures results in a good and controlled profile.

(31) It is also understood that the examples and embodiments described herein are for illustrative purposes only and that various modifications or changes in light thereof will be suggested to persons skilled in the art and are to be included within the spirit and purview of this application and scope of the appended claims.