HIGH THERMAL CONDUCTIVITY ALUMINIUM ALLOY AND PREPARATION METHOD THEREOF

Abstract

The present invention provides a high thermal conductivity aluminum alloy, which comprises the following components in percentage by weight: Al: 80%-90%; Si: 6.5%-8.5%; Fe: 0.2%-0.5%; Zn: 0.8%-3%; V: 0.03%-0.05%; Sr: 0.01%-1%; graphene: 0.02%-0.08%. In the high thermal conductivity aluminum alloy of the present invention, alloying elements including Si, Fe, and Zn are optimized; Sr, V, graphene, among others are added. The amount of each component is controlled so that they coordinate to ALLOW high thermal conductivity, good casting performance and excellent semi-solid die-casting property. Graphene is introduced to the high thermal conductivity aluminum alloy of the present invention to exploit the good thermal conductivity of graphene, allowing the formation of a high thermal conductivity aluminium alloy.

Claims

1. A high thermal conductivity aluminum alloy, characterized in that the high thermal conductivity aluminum alloy comprises the following components in percentage by weight: Al: 80%-90%; Si: 6.5%-8.5%; Fe: 0.2%-0.5%; Zn: 0.8%-3%; V: 0.03%-0.05%; Sr: 0.01%-1%; graphene: 0.02%-0.08%.

2. The high thermal conductivity aluminum alloy according to claim 1, characterized in that the high thermal conductivity aluminum alloy comprises the following components in percentage by weight: Al: 82%-90%; Si: 6.8%-7.8%; Fe: 0.25%-0.45%; Zn: 1%-2.5%; V: 0.035%-0.045%; Sr: 0.015%-0.8%; graphene: 0.04%-0.07%.

3. The high thermal conductivity aluminum alloy according to claim 2, characterized in that the high thermal conductivity aluminum alloy comprises the following components in percentage by weight: Al: 85%-88%; Si: 7%-7.5%; Fe: 0.3%-0.4%; Zn: 1.5%-2%; V: 0.038%-0.042%; Sr: 0.02%-0.6%; graphene: 0.05%-0.06%.

4. The high thermal conductivity aluminum alloy according to claim 1, characterized in that the high thermal conductivity aluminum alloy comprises the following components in percentage by weight: Al: 80%-82%; Si: 6.5%-8.5%; Fe: 0.2%-0.5%; Zn: 0.8%-3%; V: 0.03%-0.05%; Sr: 0.01%-1%; graphene: 0.02%-0.08%; RE: 1-5%.

5. The high thermal conductivity aluminum alloy according to claim 4, characterized in that said RE comprises one or more components selected from the group consisting of La, Ce, Pr, Nd, Pm, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, Lu, Y, and Sc.

6. The high thermal conductivity aluminum alloy according to claim 5, characterized in that said RE comprises one or more of the following components in percentage by weight of RE: La: 40%-70%; Sc: 15%; Y: 15%.

7. The high thermal conductivity aluminum alloy according to claim 1, characterized in that the high thermal conductivity aluminum alloy comprises the following components in percentage by weight: Al: 80%-82%; Si: 6.5%-8.5%; Fe: 0.2%-0.5%; Zn: 0.8%-3%; V: 0.03%-0.05%; Sr: 0.01%-1%; graphene: 0.02%-0.08%; La: 0.4%-3.5%; Sc: 0.75%; Y: 0.75%.

8. A method for preparing a high thermal conductivity aluminum alloy, characterized in that the method comprises the following: (1) weighing Al, Si, Fe, Zn, V, Sr and graphene according to their designated weight percentages; heating these components together at a melting temperature set at 700-750 C. until molten to obtain an aluminum alloy liquid; (2) introducing the aluminum alloy liquid into a spraying device; performing powder injection refining using an inert gas as a carrier for an injection refining time set to 8-18 minutes; after refining, the aluminum alloy liquid is left to stand for 15 to 30 minutes, followed by filtering; (3) transferring the aluminum alloy liquid after the filtering in step (2) to a rotor degassing device; performing secondary degassing by blowing nitrogen gas into the aluminum alloy liquid under rotation, wherein the rotor degassing device has a rotational speed set to 500 to 600 rpm, a gas flow rate of 10-20 liters/min; (4) mechanically stirring a degassed aluminum alloy liquid obtained in step (3) until reaching a semi-solid state and a temperature of 580-610 C. to obtain an aluminum alloy semi-solid slurry; (5) performing die-casting molding with the aluminum alloy semi-solid slurry obtained in step (4) at a temperature 575-590 C., an injection speed of 1.5-2.5 m/s, an injection specific pressure set to 30-50 MPa, and a boost pressure set to 60-80 MPa; holding pressure for 7 s to 15 s after completion of injection to obtain the high thermal conductivity aluminum alloy.

9. The method for preparing the high thermal conductivity aluminum alloy according to claim 8, characterized in that the method further comprises step (6): performing aging treatment at 300-500 C. for 1-2 hours after the die-casting molding of the aluminum alloy semi-solid slurry in step (5); cooling to obtain the high thermal conductivity aluminum alloy.

10. The method for preparing the high thermal conductivity aluminum alloy according to claim 8, wherein step (1) further comprises weighing RE according to a designated weight percentage; heating the RE together with Al, Si, Fe, Zn, V, Sr, and graphene until molten to obtain the aluminum alloy liquid.

Description

DETAILED DESCRIPTION OF THE ILLUSTRATED EMBODIMENTS

[0073] To clarify the objectives, technical solutions, and beneficial effects of the embodiments of the present invention, the technical solutions of the present invention will be clearly and fully described with reference to the embodiments of the present invention. The described embodiments are only a part of the embodiments of the present invention and do not cover all possible embodiments. Based on the embodiments in the present invention, all other embodiments obtained by a person of ordinary skill in the art without creative efforts fall within the protection scope of the present invention. It should be noted that without introducing any contradiction, the embodiments in the present application and the features in the embodiments can be arbitrarily combined.

[0074] The high thermal conductivity aluminium alloy provided in the present application will be explained in detail below with reference to specific embodiments.

Embodiment 1

[0075] A high thermal conductivity aluminium alloy that comprises the following components in percentage by weight: [0076] Al: 90%; [0077] Si: 6.5%; [0078] Fe: 0.2%; [0079] Zn: 0.8%; [0080] V: 0.03%; [0081] Sr: 0.01%; [0082] graphene: 0.02%.

[0083] The thermal conduction coefficient of the high thermal conductivity aluminium alloy of embodiment 1 reaches a maximum of 198. It shows the best electrical conductivity.

Embodiment 2

[0084] A high thermal conductivity aluminium alloy that comprises the following components in percentage by weight: [0085] Al: 80%; [0086] Si: 8.5%; [0087] Fe: 00.5%; [0088] Zn: 3%; [0089] V: 0.05%; [0090] Sr: 1%; [0091] graphene: 0.08%.

[0092] Comparing the molded high thermal conductivity aluminium alloy of embodiment 2 to high thermal conductivity aluminium alloys of other compositions, the high thermal conductivity aluminium alloy of embodiment 2 is lighter per unit volume.

Embodiment 3

[0093] A high thermal conductivity aluminium alloy that comprises the following components in percentage by weight: [0094] Al: 90%; [0095] Si: 6.8%; [0096] Fe: 0.25%; [0097] Zn: 1%; [0098] V: 0.035%; [0099] Sr: 0.015%; [0100] graphene: 0.04%.

[0101] The molding rate of the high thermal conductivity aluminium alloy of embodiment 3 reaches 96.02%. Process steps are reduced, time and cost are saved.

[0102] The parameters of the high thermal conductivity aluminium alloys from the various embodiments of the present invention are present in the table below. It should be noted that the total amount of the components in an embodiment is slightly less than 100%; this can be understood as due to the presence of a trace amount of impurities.

[0103] Table 1 shows the electrical conductivity of some embodiments of the present invention.

TABLE-US-00001 TABLE 1 Ther- mal Con- duc- Chemical composition (mass fraction/%) tivity No. Si Fe Zn V Sr Graphene Al (W/mK) A4 6.5 0.2 0.8 0.03 0.01 0.02 Remaining 195 amount A5 6.9 0.27 1.5 0.033 0.24 0.031 Remaining 184 amount A6 7.4 0 2 0.04 0.52 0.042 Remaining 185 amount A7 8 0.45 2.4 0.046 0.71 0.057 Remaining 189 amount A8 8.5 0.5 3 0.05 1 0.08 Remaining 187 amount

[0104] Table 2 shows performance parameters of some embodiments of the present invention.

TABLE-US-00002 TABLE 2 Sample name A9 A10 A11 A12 A13 A14 Com- Al 88% 85% 82% 80% 82% 80% ponents Si 7% 7.5% 6.5% 8.5% 6.5% 8.5% Fe 0.3% 0.4% 0.2% 0.5% 0.2% 0.5% Zn 1.5% 2% 0.8% 3% 0.8% 3% V 0.038% 0.042% 0.03% 0.05% 0.03% 0.05% Sr 0.03% 0.6% 0.01% 1% 0.01% 1% Graphene 0.05% 0.06% 0.02% 0.08% 0.02% 0.08% RE 1% La10% 5% La10% 1% La40% 5% La70% Ce10% Ce10% Pr10% Pr10% Sc15% Sc5% Nd10% Nd10% Pm10% Pm10% Y15% Y5% Sm10% Sm10% Eu10% Eu10% Ho15% Ho10% Gd10% Gd10% Tb10% Tb10% Er15% Er10% Dy10% Dy10% Parameters Density 2.64 2.67 2.65 2.61 2.63 2.59 g/cm3 Specific heat capacity 0.878 0.874 0.916 0.902 0.885 0.917 J/(g* C.) Thermal Conductivity 182 185 195 187 184 189 W/(m/K) Thermal conduction 78.53 79.28 80.35 79.39 79.05 79.62 coefficient mm2/s Porosity 1.3 1.1 0.9 1.0 1.2 0.8 % molding rate 95.3 93.2 92.8 94.1 93.7 94.6 %

[0105] In Table 2, the amount of RE is presented in two columns. The first column is the amount of RE as a percentage of the total weight percentage of the high thermal conductivity aluminium alloy of the present invention. The second column is the amount of each rare-earth element as a percentage of the total weight percentage of RE.

[0106] The disclosure above can be implemented individually or in various combinations, and these variations are within the protection scope of the present invention.

[0107] Finally, it should be noted that the terms include, comprise, or any other variant thereof herein are intended to cover a non-exclusive inclusion, so that a process, a method, an article, or a device that includes or comprises a series of elements includes not only those elements, but also other elements that are not explicitly listed, or include elements inherent to this process, method, article, or device. Without more restrictions, the element defined by the phrase include a/an/one . . . does not exclude the possibility of having an additional identical element in the process, method, article, or device comprising the element.

[0108] The embodiments above are only used to illustrate the technical solutions of the present invention, but not to limit them. Although the present invention has been described in detail with reference to the above embodiments, a person of ordinary skill in the art should understand that they can still modify the technical solutions described in the embodiments above or equivalently replace some of the technical features therein; these modifications or replacements do not deviate the essence of the corresponding technical solutions from the spirit and scope of the technical solutions of the embodiments of the present invention.

INDUSTRIAL APPLICABILITY

[0109] 1. The high thermal conductivity aluminium alloy of the present invention optimizes Si, Fe, Zn and other alloying elements, adds Sr, V, graphene, and RE elements. The amount of each component is controlled so that they coordinate to allow high thermal conductivity, good casting performance, and excellent semi-solid die-casting performance

[0110] 2. Graphene is added to the high thermal conductivity aluminium alloy of the present invention. This exploits the good thermal conductivity of graphene and allows the formation of a high thermal conductivity aluminium alloy.

[0111] 3. The high thermal conductivity aluminum alloy of the present invention lowers the amounts of silicon and other impurities dissolved in the aluminum alloy and reduces internal defects such as dispersed shrinkage and shrinkage holes, thereby reducing impurities inside crystal grains, reducing lattice distortion, and increasing the thermal conductivity of the aluminum alloy.

[0112] 4. The high thermal conductivity aluminum alloy of the present invention has high electrical conductivity, which meets the latest development needs in the field of electronics communications; it can also meet the requirements placed by the rapid development in the field of communications on the performance of semiconductor components.