Monolithic integrated semiconductor random laser

Abstract

A monolithic integrated semiconductor random laser comprising substrate, lower confinement layer on the substrate, active layer on the lower confinement layer, upper confinement layer on the active layer, strip-shaped waveguide layer longitudinally made in middle of the upper confinement layer, P.sup.+ electrode layer divided into two segments and made on the waveguide layer and N.sup.+ electrode layer on a back face of the lower confinement layer, wherein the two segments correspond respectively to gain region and random feedback region. The random feedback region uses a doped waveguide to randomly feedback light emitted by the gain region and then generates random laser which is random in frequency and intensity. Further, the semiconductor laser is light, small, stable in performance and strong in integration.

Claims

1. A monolithic integrated semiconductor random laser comprising: a substrate; a lower confinement layer made on the substrate; an active layer made on the lower confinement layer; an upper confinement layer made on the active layer; a strip-shaped waveguide layer longitudinally formed in the middle of the upper confinement layer; a P.sup.+ electrode layer divided into two segments by an isolation groove, and made on the waveguide layer; and an N.sup.+ electrode layer made on a back face of the lower confinement layer, wherein the two segments of P.sup.+ electrode layer respectively correspond to a gain region and a random feedback region, and wherein a portion of the active layer corresponding to the random feedback region introduces doping to form a random resonant cavity.

2. The monolithic integrated semiconductor random laser of claim 1, wherein the gain region provides a gain for a whole chip, and a portion of the active layer corresponding to the gain region is a multi-quantum well material; and a length of the gain region is 30050 m.

3. The monolithic integrated semiconductor random laser of claim 1, wherein the random feedback region randomly feeds back light emitted by the gain region, and the portion of the active layer corresponding to the random feedback region is a bulk material; and a length of the random feedback region is 30050 m.

Description

BRIEF DESCRIPTION OF THE DRAWINGS

(1) FIG. 1 is a structural schematic diagram of the present disclosure.

REFERENCE SIGNS LIST

(2) 1N.sup.+ electrode layer; 2Substrate; 3Lower confinement layer; 4Active layer; 5Upper confinement layer; 6Waveguide layer; 7P.sup.+ electrode layer; 8Isolation groove; 9Doped waveguide; AGain region; BRandom feedback region.

DESCRIPTION OF EMBODIMENTS

(3) Referring to FIG. 1, the present disclosure discloses a monolithic integrated semiconductor random laser composed of a gain region A and a random feedback region B. Specifically, the monolithic integrated semiconductor random laser comprises:

(4) a substrate 2;

(5) a lower confinement layer 3 for limiting carriers and photons in the vertical direction, made on the substrate 2 and having a thickness of 80 to 200 nm;

(6) an active layer 4 for generating photons and amplification by stimulated radiation, made on the lower confinement layer 3 and having a thickness of 80 to 200 nm, wherein a portion of the active layer corresponding to the gain region A is a multiple quantum well material, and the gain peak wavelength corresponds to 1310 nm or 1550 nm; a portion of the active layer corresponding to the random feedback region B is a bulk material;

(7) an upper confinement layer 5 for limiting carriers and photons in the vertical direction, made on the active layer 4, and functioning together with the lower confinement layer 3;

(8) a strip-shaped waveguide layer 6 longitudinally made in the middle of the upper confinement layer and its function being mainly to guide light;

(9) a P.sup.+ electrode layer 7 made on the waveguide layer 6 and divided into two segments by an isolation groove 8, wherein the isolation groove 8 is made into a high resistance region by injecting He.sup.+ ions or etching, thus realizing electrical isolation between each electrode;

(10) an N.sup.+ electrode layer 1 made on a back face of the substrate 2,

(11) wherein the two segments of P.sup.+ electrode layer 7 respectively correspond to the gain region A and the random feedback region B;

(12) wherein the gain region A provides a gain for a whole chip, and a portion of the active layer 4 corresponding to the gain region A is a multiple quantum well material; a length of the gain region is 30050 m;

(13) wherein the random feedback region B performs random feedback on light emitted by the gain region A, and a portion of the active layer 4 corresponding to the random feedback region is a bulk material and introduces a doped waveguide 9; and a length of the random feedback region B is 30050 m;

(14) wherein an end face of the monolithic integrated semiconductor random laser on the side of the gain region A is a natural dissociation end face, and its reflectivity is 0.32. an end face on the side of the random feedback region B is a light-emitting end face, and its reflectance can be reduced to 0.1 if an anti-reflection coating is required to be plated so as to increase the light output power, and a random laser is finally output from the end surface.

(15) The present disclosure uses a doped waveguide to form a random resonant cavity, and provides a new type of monolithic integrated random laser. The beam generates random feedback in the doped waveguide to form a random resonant cavity, and the random feedback of the doped waveguide to the incident light determines the property of the irradiated laser, therefore, both frequency and intensity of laser emitted by the random laser are random. And the adoption of monolithic integration structure brings advantages of being light in weight, small in volume, stable in performance and strong in integration.

(16) In the above specific embodiment, a monolithic integrated semiconductor random laser of the present disclosure is further described in detail, and it should be understood that the above description is only a specific embodiment of the present disclosure and is not intended to limit the present disclosure, and any modifications, equivalent substitutions, improvements, etc., made within the spirit and scope of the present invention shall be included within the scope of the present invention.