Preparation method of an LED illuminating device

Abstract

An LED illuminating device and a preparation method therefor. The device is characterized by comprising an LED component (101), an LED circuit board (100), a heat dissipator (200), and a power supply controller (400). The LED component (101) is disposed on the LED circuit board (100), the LED circuit board (100) is disposed above the heat dissipator (200), and the power supply controller (400) is connected to the LED circuit board (100) by means of a conductive wire. The LED illuminating device can emit approximate natural light.

Claims

1. Preparation method of an LED illuminating device, wherein the device comprises LED components (101), LED red light source (102), an LED circuit board (100), a heat dissipator (200) and a power supply controller (400); the LED components (101) and the LED red light source (102) are disposed on the LED circuit board, the LED circuit board is disposed above the heat dissipator, the power supply controller (400) is connected to the LED circuit board by means of a conductive wire (300), and the power supply controller is also connected with an external power input line, the LED components are used for providing an LED white light source; the LED illuminating device is prepared by the following method: Step 1: Adopt the board of sapphire as base board for the LED circuit board, and make it into LED circuit board (100); Step 2: Deposit evenly multilayer LED fluorescent thin films on the LED components, including: (1) Preparation of red fluorescent materials: The raw material uses Gd(NO.sub.3).sub.3.6H.sub.2O, Li.sub.2CO.sub.3, MgCO.sub.3, Nb.sub.2O.sub.5, H.sub.3BO.sub.3, Sm.sub.2O.sub.2, Na.sub.2CO.sub.3 and deionized water; the molar ratio of Gd(NO.sub.3).sub.3.6H.sub.2O, Li.sub.2CO.sub.3, MgCO.sub.3, Nb.sub.2O.sub.5, H.sub.3BO.sub.3, Sm.sub.2O.sub.2 and Na.sub.2CO.sub.3 is (1xy):1-2:1-2:1-2:1-2:x:y (0.01x0.08, x/y=1-2); the mass ratio of Gd(NO.sub.3).sub.3.6H.sub.2O and deionized water is 1:1-2; add Gd(NO.sub.3).sub.3.6H.sub.2O, Li.sub.2CO.sub.3, MgCO.sub.3, Nb.sub.2O.sub.5, Sm.sub.2O.sub.2 and Na.sub.2CO.sub.3 into deionized water to form a turbid liquid; Stir the turbid liquid at the condition of 50-60 C. for 30-45 minutes and dropwise add H.sub.3BO.sub.3; after that, rinse the sediment with deionized water for 3-5 times and dry it in the drying case; blend evenly the dried materials by ball-milling and put into crucible for sintering for 4-5 hours at 450 C. in the heating chamber; raise the temperature to 1000-1200 C. and bake for 15-20 hours, then naturally cool the temperature to room temperature; grind the baked product to obtain the Gd.sub.1xyLi.sub.3Mg.sub.2(NbO.sub.6)(BO.sub.3):xSm.sup.3+,yNa.sup.1+; (2) Preparation of green fluorescent materials: A) Weigh and take BaCO.sub.3, SiO.sub.2 and Tb.sub.2O.sub.3, put them into container and add ethanol and then place them into a crucible after mixing and fully grinding; put the crucible in a sintering furnace, raise the temperature to 12001300 C. with nitrogen, and conduct sintering for 3-6 hours (the gas flow rate of the nitrogen is 30 ml/min); reduce the temperature to 900 C. for sintering for 2 hours, and cool to obtain an intermediate Ba.sub.1.94SiO.sub.4:0.06 Tb.sup.3+; the molar ratio of BaCO.sub.3, SiO.sub.2 and Tb.sub.2O.sub.3 is 1-2:1-2:0.01-0.1; the mass ratio of BaCO3 and ethanol is 1:2-3; B) Blend the intermediate Ba.sub.1.94SiO.sub.4:0.06 Tb.sup.3+, -Si.sub.3N.sub.4 and Ce.sub.2O.sub.3, and then add H.sub.3BO.sub.3; grind the above components and put into a molybdenum crucible, and transfer the molybdenum crucible into a high temperature furnace; sinter at 1400 C. for 3-6 hours in the condition of N.sub.2:H.sub.2=95:5 (the gas flow rate is within 25 ml/min); after that, cool to room temperature and take out, obtaining synthesizing powder Ba.sub.0.92Si.sub.2O.sub.2N.sub.2:0.06 Tb.sup.3+, 0.02 Ce.sup.3+; place the powder into isopropanol (the mass ratio of the powder and isopropanol is 1:1-2) and disperse it with ultrasonic crusher for 1-2 hours; dry the dispersed powder to obtain nitrogen oxide of green fluorescent powder Ba.sub.0.92Si.sub.2O.sub.2N.sub.2:0.06 Tb.sup.3+, 0.02 Ce.sup.3+; the mass ratio of Ba.sub.1.94SiO.sub.4:0.06 Tb.sup.3+, -Si.sub.3N.sub.4 and H.sub.3BO.sub.3 is 2-4:1-2:0.01-0.1; the molar ratio of Tb element and Ce element is 3:1; (3) Preparation of blue fluorescent materials: A) Blend BaCO.sub.3, MgO, CaCO.sub.3, NH.sub.4H.sub.2PO.sub.4, Tm(NO.sub.3).sub.3.5H.sub.2O with a molar ratio of 1n:1:1:2:n in an agate mortar, add compound auxiliary agent and grind for 40-60 minutes, take out and put into a crucible; conduct pre-sintering at 900 C. for 2-3 hours, take out the sample after natural cooling and grind furtherly for 40-60 minutes; put the sample into the crucible again, sinter at 1200 C. for 3-6 hours under the condition of N.sub.2:H.sub.2=95:5, and then naturally cool to room temperature, obtaining blue fluorescent powder of Ba.sub.1nMgCa(PO.sub.4).sub.2:nTm.sup.3+; B) Change the property of blue fluorescent powder: add distilled water to the previously prepared Ba.sub.1nMgCa(PO.sub.4).sub.2:nTm.sup.3+ to form turbid solution after fully dispersing; add sol and make into a mixture; after dispersing it with ball-milling for 30-60 minutes, dry it at 100 C.; and then place at 500 C. for 2-3 hours, obtaining the blue fluorescent material that has change property; the mass ratio of blue fluorescent powder, distilled water and MgF.sub.2 sol is 1-2:2-3:0.05-0.5; (4) Deposit the first layer of red fluorescent material, the second layer of green fluorescent material and the third layer of blue fluorescent material on the LED components respectively by a Chemical Vapor Deposition Method to form an LED fluorescent film; Step 3: Determine the power of the LED illuminating device according to the spectrum design requirements of the LED illuminating device; Step 4: Calculate the number of LED components selected and the number of LED red light sources according to the required LED illuminating device.

2. The preparation method of an LED illuminating device according to claim 1, wherein, the preparation method of the sapphire described in Step 1 includes the following steps: a) Preparation of raw materials: adopt -Al.sub.2O.sub.3 as a main raw material, add cubic BN, Nano ZrO.sub.2 and Nano TiO.sub.2, and mix the above materials in a mixing machine for 15-30 minutes; the mass ratio of -Al.sub.2O.sub.3, cubic BN, Nano ZrO.sub.2 and Nano TiO.sub.2 is 10-25:2-5:2-3:1-4; b) Put the raw materials into a crystal growth furnace, make it vacuum and add helium gas, heat it to 2000-2100 C. to melt the raw materials into molten state melt, ad keep the temperate for 4-5 hours after melting; c) On the upper pant of the crystal growth furnace is a mould, the cross section of which is circle, and the center of which has a small hole. Through capillary action of the small hole, the melt is led into the top end of the mould; choose directional seed crystal in C-direction to pull the melt to promote crystal growth; during the process, the surface temperature of the melt is controlled to be 2089 C., and the pulling speed is 10.20 mm/h; reduce the temperature to 1480-1570 C. after the growth of crystal; then cool the crystal after preserving the heat for 15-30 minutes. Control the rate of reducing the temperature at 30-60 C./h to obtain the crystal; d) Cut the crystal rod with cutting equipment to obtain wafer with the required shape; e) Grinding: Grind the wafer with a grinding machine. Add self-made grinding fluid when grinding and pressurize the wafer to 0.025-0.027Mpa by grinding disc, the rotation speed of which is 1000-1200 rpm/min; clean with absolute ethyl alcohol after grinding; the grinding liquid consists of carborundum particles of 0.1-2 m, Al.sub.2O.sub.3 particles of 1-m, Poly -olefins, N, N-Ethylene, diesteramide and deionized water, the mass ratio of the carborundum particles, the Al.sub.2O.sub.3 particles, the Poly -olefins, the N, N-Ethylene diesteramide and the deionized water is 1-5:1-5:5-10:3-6:30-50; f) Annealing: Put the wafer into the annealing furnace; firstly, raise the temperature to 500 C. and hold for 1-2 hours, then raise the temperature to 800 C. and hold for 2-4 hours, and then raise the temperature to 1600 C. and hold for 2-4 hours; secondly, reduce the temperature at the rate of 210-220 C.; reduce the temperature to 1300 C. and hold for 0.5-1 hour, then reduce the temperature to 1000 C. and hold for 1-2 hours, and then reduce the temperature to 600 C. and hold for 1-3 hours; lastly, cool the temperature to room temperature at a speed of 20-40 C./h and take out the wafer; g) Polishing: Wash the wafer by absolute ethyl alcohol for 3-5 times, and put it into a polishing machine and fix it; add polishing liquid during polishing; the rotating speed of the polishing disc is 1000-1500 rpm/min; rinse the polished wafer with absolute ethyl alcohol and then cool it naturally at room temperature.

3. The preparation method of an LED illuminating device according to claim 1, wherein the particle diameter of the -Al.sub.2O.sub.3 raw material described in the step a) is 0.5-5 m, and the density is 3.98 g/cm.sup.3; m Al.sub.2O.sub.3 m Al.sub.2O.sub.3 the polishing liquid described in step g) consists of cerium oxide micron particles, alkyl glycoside, hydroxymethyl cellulose sodium, glycerol, hydroxyethyl diamine and deionized water. The mass ratio of cerium oxide particles, alkyl glycoside, hydroxymethyl cellulose sodium, glycerol and deionized water is 1-5:10-15:6-8:5-10:30-50. Hydroxyethyl diamine is used to control the pH of the polishing liquid so that the polishing liquid is an alkaline solution with a pH value of 8-10.

4. The preparation method of an LED illuminating device according to claim 1, wherein, in the preparation of the red fluorescent material, x=0.02 and y=0.02; the obtained red fluorescent material is Gd.sub.0.96Li.sub.3Mg.sub.2(NbO.sub.6)(BO.sub.3):0.02Sm.sup.3+, 0.02 Na.sup.1+; the particle size of the material is less then 10 m, of which the size of 1-6 m accounts for 75%; in the preparation of the blue florescent material, n=0.03. The obtained blue fluorescent powder is Ba.sub.0.97MgCa(PO.sub.4).sub.2:0.03Tm.sup.3+; the compound auxiliary agent consists of H.sub.3BO.sub.3+BaF.sub.2 with a mass ratio of 1:1 and its mass is 10% of BaCO.sub.3; the particle size of the blue fluorescent powder is less than 10 m, of which the size of 1-5 m accounts for 70%.

5. The preparation method of an LED illuminating device according to claim 1, wherein, in step 2, three layers of LED fluorescent films are evenly deposited on the LED components.

Description

BRIEF DESCRIPTION OF THE DRAWINGS

(1) FIG. 1 is the structure diagram of LED illuminating device.

SPECIFIC IMPLEMENTATION METHOD

(2) This invention hereof will be further described below with the specific examples.

(3) An LED illuminating device, wherein the device comprises LED components (101), LED red light source (102), an LED circuit board (100), a heat dissipator (200) and a power supply controller (400); the LED components (101) and the LED red light source (102) are disposed on the LED circuit board, the LED circuit board is disposed above the heat dissipator, and the power supply controller is connected to the LED circuit board by means of a conductive wire (300)

(4) The LED components are used for providing an LED white light source; the power supply controller is connected to the LED circuit board by means of a conductive wire (300), and the power supply controller is also connected with an external power input line.

(5) A preparation method of the LED illuminating device as previously mentioned includes the following steps:

(6) Step 1: Adopt the board of sapphire as base board for the LED circuit board, and make it into LED circuit board (100);

(7) Step 2: Deposit evenly multilayer LED fluorescent thin films on the LED components;

(8) Step 3: Determine the power of the LED illuminating device according to the spectrum design requirements of the LED illuminating device;

(9) Step 4: Calculate the number of LED components selected and the number of LED red light sources according to the required LED illuminating device.

(10) The preparation method of the sapphire described in Step 1 includes the following steps:

(11) Preparation of raw materials: adopt -Al.sub.2O.sub.3 as main raw material, add cubic BN, Nano ZrO.sub.2 and Nano TiO.sub.2, and mix the above materials in a mixing machine for 15-30 minutes; the mass ratio of -Al.sub.2O.sub.3, cubic BN, Nano ZrO.sub.2 and Nano TiO.sub.2 is 10-25:2-5:2-3:1-4; the particle diameter of the -Al.sub.2O.sub.3 raw material described is 0.5-5 m, and the density is 3.98 g/cm.sup.3. The grinding liquid described in step e) consists of carborundum particles of 0.1-2 m, Al.sub.2O.sub.3 particles of 1-m, Poly -olefins, N, N-Ethylene diesteramide and deionized water. The mass ratio of the carborundum particles, the Al.sub.2O.sub.3 particles, the Poly -olefins, the N, N-Ethylene diesteramide and the deionized water is 1-5:1-5:5-10:3-6:30-50. The particle sizes of Nano-ZrO.sub.2 and Nano-TiO.sub.2 particles are 1-50 nm, and the particle size of TiO.sub.2 particles is smaller than that of ZrO.sub.2 particles.

(12) b) Put the raw materials into a crystal growth furnace, make it vacuum and add helium gas, heat it to 2000-2100 C. to melt the raw materials into molten state melt, and keep the temperature for 4-5 hours after melting.

(13) c) On the upper part of the crystal growth furnace is a mould, the cross section of which is circle, and the center of which has a small hole. Through capillary action of the small hole, the melt is led into the top end of the mould. Choose directional seed crystal in C-direction to pull the melt to promote crystal growth. During the process, the surface temperature of the melt is controlled to be 2089 C., and the pulling speed is 10-20 mm/h. Reduce the temperature to 1480-1570 C. after the growth of crystal. Then cool the crystal after preserving the heat for 15-30 minutes. Control the rate of reducing the temperature at 30-60 C./h to obtain the crystal.

(14) Cut the crystal rod with cutting equipment to obtain wafer with the required shape.

(15) e) Grinding: Grind the wafer with a grinding machine. Add self-made grinding fluid when grinding and pressurize the wafer to 0.025-0.027 Mpa by grinding disc, the rotation speed of which is 1000-1200 rpm/min. Clean with absolute ethyl alcohol after grinding.

(16) f) Annealing: Put the wafer into the annealing furnace. Firstly, raise the temperature to 500 C. and hold for 1-2 hours, then raise the temperature to 800 C. and hold for 2-4 hours, and then raise the temperature to 1600 C. and hold for 2-4 hours. Secondly, reduce the temperature at the rate of 210-220 C. Reduce the temperature to 1300 C. and hold for 0.5-1 hour, then reduce the temperature to 1000 C. and hold for 1-2 hours, and then reduce the temperature to 600 C. and hold for 1-3 hours. Lastly, cool the temperature to room temperature at a speed of 20-40 C./h and take out the wafer.

(17) g) Polishing: Wash the wafer by absolute ethyl alcohol for 3-5 times, and put it into a polishing machine and fix it. Add polishing liquid during polishing. The rotating speed of the polishing disc is 1000-1500 rpm/min. Rinse the polished wafer with absolute ethyl alcohol and then cool it naturally at room temperature. The polishing liquid components described consist of cerium oxide micron particles, alkyl glycoside, hydroxymethyl cellulose sodium, glycerol, hydroxyethyl diamine and deionized water; the mass ratio of cerium oxide particles, alkyl glycoside, hydroxymethyl cellulose sodium, glycerol and deionized water is 1-5:10-15:6-8:5-10:30-50. Hydroxyethyl diamine is used to control the pH of the polishing liquid so that the polishing liquid is an alkaline solution with a pH value of 8-10.

(18) In step 2, depositing an even multilayer LED fluorescent film on the LED device includes the following steps:

(19) (1) Preparation of Red Fluorescent Materials:

(20) The raw material uses Gd(NO.sub.3).sub.3.6H.sub.2O, Li.sub.2CO.sub.3, MgCO.sub.3, Nb.sub.2O.sub.5, H.sub.3BO.sub.3, Sm.sub.2O.sub.2, Na.sub.2CO.sub.3 and deionized water; the molar ratio of Gd(NO.sub.3).sub.3.6H.sub.2O, Li.sub.2CO.sub.3, MgCO.sub.3, Nb.sub.2O.sub.5, H.sub.3BO.sub.3, Sm.sub.2O.sub.2 and Na.sub.2CO.sub.3 is (1xy):1-2:1-2:1-2:1-2:x:y (0.01x0.08, x/y=1-2); the mass ratio of Gd(NO.sub.3).sub.3.6H.sub.2O and deionized water is 1:1-2; add Gd(NO.sub.3).sub.3.6H.sub.2O, Li.sub.2CO.sub.3, MgCO.sub.3, Nb.sub.2O.sub.5, Sm.sub.2O.sub.2 and Na.sub.2CO.sub.3 into deionized water to form a turbid liquid; Stir the turbid liquid at the condition of 50-60 C. for 30-45 minutes and dropwise add H.sub.3BO.sub.3; after that, rinse the sediment with deionized water for 3-5 times and dry it in the drying case; blend evenly the dried materials by ball-milling and put into crucible for sintering for 4-5 hours at 450 C. in the heating chamber; raise the temperature to 1000-1200 C. and bake for 15-20 hours, then naturally cool the temperature to room temperature; grind the baked product to obtain the Gd.sub.1xyLi.sub.3Mg.sub.2(NbO.sub.6)(BO.sub.3):xSm.sup.3+,yNa.sup.1+, Whereby x=0.02 and y=0.02. The obtained red fluorescent material is Gd.sub.0.96Li.sub.3Mg.sub.2(NbO.sub.6)(BO.sub.3):0.02Sm.sup.3+, 0.02 Na.sup.1+, and the particle diameter of the material is less than 10 m, of which the particle diameter of 1-6 m accounts for 75%.

(21) Preparation of Green Fluorescent Materials:

(22) a) Weigh and take BaCO.sub.3, SiO.sub.2 and Tb.sub.2O.sub.3, put them into container and add ethanol and then place them into a crucible after mixing and fully grinding. Put the crucible in a sintering furnace, raise the temperature to 12001300 C. with nitrogen, and conduct sintering for 3-6 hours (the gas flow rate of the nitrogen is 30 ml/min). Reduce the temperature to 900 C. for sintering for 2 hours, and cool to obtain an intermediate Ba.sub.1.94SiO.sub.4:0.06 Tb.sup.3+. The molar ratio of BaCO.sub.3, SiO.sub.2 and Tb.sub.2O.sub.3 is 1-2:1-2:0.01-0.1. The mass ratio of BaCO.sub.3 and ethanol is 1:2-3;

(23) b) Blend the intermediate Ba.sub.1.94SiO.sub.4:0.06 Tb.sup.3+, -Si.sub.3N.sub.4 and Ce.sub.2O.sub.3, and then add H.sub.3BO.sub.3. Grind the above components and put into a molybdenum crucible, and transfer the molybdenum crucible into a high temperature furnace. Sinter at 1400 C. for 3-6 hours in the condition of N.sub.2:H.sub.2=95:5 (the gas flow rate is controlled within 25 ml/min). After that, cool to room temperature and take out, obtaining synthesizing powder Ba.sub.0.92Si.sub.2O.sub.2N.sub.2:0.06 Tb.sup.3+, 0.02 Ce.sup.3+. Place the powder into isopropanol (the mass ratio of the powder and isopropanol is 1:1-2) and disperse it with ultrasonic crusher for 1-2 hours. Dry the dispersed powder to obtain nitrogen oxide of green fluorescent powder Ba.sub.0.92Si.sub.2O.sub.2N.sub.2:0.06 Tb.sup.3+, 0.02 Ce.sup.3+. The mass ratio of Ba.sub.1.94SiO.sub.4:0.06 Tb.sup.3+, a Si.sub.3N.sub.4 and H.sub.3BO.sub.3 is 2-4:1-2:0.01-0.1. The molar ratio of Tb element and Ce element is 3:1.

(24) Preparation of Blue Fluorescent Materials:

(25) a. Mix BaCO.sub.3, MgO, CaCO.sub.3, NH.sub.4H.sub.4PO.sub.4 and Tm(NO.sub.3).sub.3.5H.sub.2O with a molar ratio of 1n:1:1:2:n in an agate mortar, add compound auxiliary agent and grind for 40-60 minutes, take out and put into a crucible. Conduct pre-sintering at 900 C. for 2-3 hours, take out the sample after natural cooling and grind furtherly for 40-60 minutes. Put the sample into the crucible again, sinter at 1200 C. for 3-6 hours under the condition of N.sub.2:H.sub.2=95:5, and then naturally cool to room temperature, obtaining blue fluorescent powder of Ba.sub.1nMgCa(PO.sub.4).sub.2:nTm.sup.3+.

(26) b) b. Change the property of blue fluorescent powder: add distilled water to the previously prepared Ba.sub.1nMgCa(PO.sub.4).sub.2:nTm.sup.3+ to form turbid solution after fully dispersing. Add MgF.sub.2 sol and make into a mixture. After dispersing it with ball-milling for 30-60 minutes, dry it at 100 C. And then place at 500 C. for 2-3 hours, obtaining the blue fluorescent material that has change property. The mass ratio of blue fluorescent powder, distilled water and MgF.sub.2 sol is 1-2:2-3:0.05-0.5. The obtained blue fluorescent powder is Ba.sub.0.97MgCa(PO.sub.4).sub.2:0.03Tm.sup.3+. The compound auxiliary agent consists of H.sub.3BO.sub.3+BaF.sub.2 with a mass ratio of 1:1 and its mass is 10% of BaCO.sub.3. The particle size of the blue fluorescent powder is less than 10 m, of which the size of 1-5 m accounts for 70%.

(27) (4) Deposit the first layer of red fluorescent material, the second layer of green fluorescent material and the third layer of blue fluorescent material on the LED components respectively by a Chemical Vapor Deposition Method to form an LED fluorescent thin film.

(28) In the deposition process, let the red fluorescent material as the first layer, the green fluorescent material as the second layer, and blue fluorescent material as the third layer. The deposition method of the first layer of red fluorescent material is as follows: dissolve the red fluorescent material into the mixed solvent to form first solutions with a concentration of 0.1 mol/l (The mixed solvent consists of tetrahydrofuran and 2-Ethylhexanoic Acid with a molar ratio of 3:2.5). Heat the first solution to 350 C., hold the temperature for 30-60 minutes, and then feed it into a gasification chamber to gasify the solution to form a first mixed gas. Transport the first mixed gas to the LED components in the reactor at a flow rate of 4000 sccm through argon gas (The temperature in the reactor is 300 C.) and place it quiet for 30-45 minutes after the convey. After that, raise the temperature of the device to 800 C., and hold the temperature for 30-60 min to obtain a first layer of fluorescent film formed on the LED device. Repeat the above steps to deposit the second layer of green fluorescent material and the third layer of blue fluorescent material on the LED device to form three layers of LED fluorescent films little by little. The thickness of each coating film is 0.2-m, and 0.5 m is preferred.

(29) Then determine the power of the LED illuminating device according to the spectrum design requirements of the LED illuminating device. Finally, calculate the number of LED components selected and the number of LED red light sources according to the required LED illuminating device.

(30) Modulate a visible spectrum range reaching 370-720 nm by using over one set of LED white light sources and over one set of LED red light sources, which is very close to natural light.

(31) The LED white light source and the LED red light source have the following properties:

(32) (1) The CRI of the LED white light source is greater than 90, 95-100 is preferred; R9 is greater than 80, 85-90 is preferred, and R12 is greater than 70, 75 is preferred.

(33) (2) The wavelength of the LED red light source is greater than 620 nm.

(34) As a preferred method of the above implementation examples, the power ratio of the LED white light source 101 to the LED red light source 102 is 3-10:1.

(35) As a preferred method of the above implementation examples, when the power of a single LED white light source and a single LED red light source is the same, the quantity ratio of the LED white light source 101 to the LED red light source 102 is 3-10:1.

(36) As a preferred method of the above implementation examples, the ratio of the luminous flux value of the LED white light source to the light radiation power value of the LED red light source is 1-3:1.

(37) As an Implementation Example

(38) 1) The CRI of the prepared white light source 101 is 95-100, R9 is 85-90, R12 is 75, the rated working current is 150 mA, the rated working voltage is 2.9-3.4V, and the quantity of LED white light sources is 12.

(39) 2) Select two sets of LED red light sources 102 with different wavelengths. The power of a single LED red light source 102 is 0.5 W, the rated working current is 150 mA, and the rated working voltage is 2.0-2.6V. The wavelengths of the two sets of LED red light sources 102 are 650-660 nm (the quantity is 2) and 680-700 nm (the quantity is 2), respectively.

(40) 3) Design the LED circuit board and heat dissipator according to the installation requirements and connection methods of the above three light sources.

(41) The connection method of the three sets of LED devices above-mentioned is as follows: two in parallel and eight in series. The lamp beads of 12 LED white light source are connected two in parallel and six in series and two sets of the lamp beads (the quantity is 4) of LED red light source are connected in two in parallel and two in series, then link them together in series, that is, two in parallel and eight in series.

(42) The electro-optic conversion efficiency (lm/W) of the prepared LED illuminating device is 90-125, the CRI is 95-100, and the working life of the product is (L70, h)60000-115000 (L70 represents the working time when the luminous maintenance rate of the LED is 70%).

(43) It should be understood that these implementation examples are only for the purpose of explaining the invention hereof and are not used to limit the scope of the invention hereof. It should also be understood that after reading the contents of the invention hereof, technical personnel in the field can make various changes or modifications to the invention hereof, and these equivalent forms also belong to the scope defined by the appended right claim documents of this application.