Wiring board, multilayer wiring board, and method of manufacturing wiring board
10966324 ยท 2021-03-30
Assignee
Inventors
Cpc classification
H05K2201/0347
ELECTRICITY
H05K3/427
ELECTRICITY
H05K1/11
ELECTRICITY
H05K2203/1461
ELECTRICITY
H05K1/116
ELECTRICITY
H05K3/18
ELECTRICITY
International classification
H05K3/30
ELECTRICITY
H05K3/10
ELECTRICITY
H05K3/02
ELECTRICITY
H05K3/00
ELECTRICITY
H05K1/18
ELECTRICITY
H05K1/11
ELECTRICITY
H05K1/09
ELECTRICITY
H05K3/06
ELECTRICITY
H05K3/18
ELECTRICITY
H05K3/36
ELECTRICITY
H05K3/38
ELECTRICITY
H05K3/40
ELECTRICITY
Abstract
A wiring board, a multilayer wiring board, and a method of manufacturing a wiring board adapted to make the filling of through holes and the formation of fine wiring patterns. The wiring board comprises an insulator; a through hole between front and back surfaces of the insulator; a through hole conductor for electrically connecting front and back surface side openings; through hole lands around the front and the back surface side openings, and connected to the through hole conductor; lid plating conductors on the front and the back surface sides, and placed on the respective through hole lands; and wiring patterns formed on the front are compatible and the back surface of the insulator. The thickness of the through hole lands is 1.0 m or more and 10.0 m or less, and the area of each lid plating conductor is less than the area of each through hole land.
Claims
1. A wiring board comprising: an insulator; a through hole penetrating between a front surface and a back surface of the insulator; a through hole conductor provided on a wall surface of the through hole to electrically connect a front surface side opening and a back surface side opening of the through hole; through hole lands provided around the front surface side opening and the back surface side opening, respectively, and connected to the through hole conductor; lids provided on the front surface side and the back surface side of the insulator, respectively, and placed on the respective through hole lands; and, wiring patterns formed on the front surface and the back surface of the insulator, respectively; wherein a thickness of the through hole lands is 1.0 m or more and 8 m or less, an area of each of the lids is less than an area of each through hole land, each of the lids and the wiring patterns comprises a plating conductor, which is the same for each of the lids and the wiring patterns, and wherein each of the lids and the wiring patterns are formed in a single step of depositing said plating conductor.
2. The wiring board of claim 1, further comprising a resin filled in the through hole, and, wherein the through hole conductor is interposed between the resin and the wall surface of the through hole.
3. The wiring board of claim 1, wherein a width of the wiring patterns is 2.0 pun or more and 25 m or less, and a conductor area ratio of a region including the wiring pattern and a gap part adjacent to the wiring pattern and not including the through hole land in each of the front surface and the back surface of the insulator is 50% or smaller.
4. A multilayer wiring board comprising: the wiring board of claim 1; and an insulating layer and a conductor layer alternately laminated on at least one of the front surface and the back surface of the wiring board.
5. The wiring board of claim 1, wherein the thickness of the through hole lands is 4 m to 8 m.
6. A method of manufacturing a wiring board, comprising the steps of: forming a through hole penetrating between a front surface and a back surface of an insulator; forming a through hole conductor on a wall surface of the through hole to electrically connect a front surface side opening and a rear surface side opening of the through hole; forming through hole lands around the front surface side opening and the back surface side opening of the insulator, respectively, such that the through hole lands are connected to the through hole conductor; and forming, by depositing a plating conductor on the front surface side and the back surface side of the insulator, (a) lids placed on the respective through hole lands and (b) wiring patterns, wherein the each of the lids and the wiring patterns comprises the deposited playing conductor, and wherein a thickness of the through hole lands is 1.0 m or more and 8.0 m or less, and an area of each of the lids is less than an area of each through hole land.
7. The method of claim 6, wherein the thickness of the through hole lands is 4 m to 8 m.
Description
BRIEF DESCRIPTION OF THE DRAWINGS
(1)
(2)
(3)
(4)
(5)
(6)
(7)
DESCRIPTION OF REPRESENTATIVE EMBODIMENTS
(8) With reference to the drawings, a description will now be given of representative embodiments according to the present invention. The present invention is not limited to the following representative embodiments, and appropriate modifications can be made without departing from the spirit of the present invention. The representative embodiments described below are merely examples of the present invention, and the design thereof could be appropriately changed by one skilled in the art. Here, the drawings are schematic, and the relationship between thickness and plane size, the ratio of the thickness of each layer, etc., are different from actual ones. The embodiments described below are merely examples of the configurations for embodying the technical idea of the present invention, and the technical idea of the present invention should not limit the materials, shapes, structures, and the like of the components to those described below. The technical idea of the present invention can be modified in various ways within the technical scope specified by the claims.
(9) The same constituent elements are denoted by the same reference numerals unless there is a reason for the sake of convenience, and redundant description is omitted. In the drawings referred to in the following description, for clarity, characteristic parts are enlarged, and thus the components are not shown to scale. It is, however, clear that one or more embodiments can be implemented without such details. In addition, known structures and devices may be schematically represented for simplicity.
(10) A wiring board according to one embodiment of the present invention is shown in
(11) Here, each through hole land 25 comprises a copper foil 25a formed on the front surface or the back surface of the insulator 2, and a copper conductor 25b formed on the copper foil 25a, and they are formed such that they extend from the through hole conductor 24 to the periphery of the front surface side opening or the back surface side opening of the through hole 21.
(12) The thickness T1 of the through hole lands 25 is 1.0 m or more and 10.0 m or less. In addition, the area of the lid plating conductors 28 is smaller than the area of the through hole lands 25.
(13) When the thickness T1 of the through hole lands 25 is 1.0 m or more and 10.0 m or less, it is possible to reduce the etching amount and the undercut amount of the subtractive method. Thus, the variation in the diameter of the through hole lands 25 can be suppressed and fine wiring can be formed. When the thickness T1 of the through hole lands 25 is less than 1.0 m, the through hole lands 25 may be greatly damaged due to the etching in the subsequent process. On the other hand, when the thickness T1 of the through hole lands 25 is more than 10 m, the effect of making the wiring finer provided by reducing the etching amount of the subtractive method is reduced. Further, by making the area of the lid plating conductors 28 smaller than the area of the through hole lands 25, it is possible to reduce the size of the conductor pattern covering the periphery of the through hole.
(14) A hole filling resin (resin) 22 is filled inside the through hole 21, and the through hole conductor 24 is interposed between the hole filling resin 22 and the wall surface of the through hole 21.
(15) A conductive wiring pattern 29 is formed on each of the front surface and the back surface of the insulator 2. The width of this wiring pattern 29 is 2.0 m or more and 25 m or less. Further, in each of the front surface and the back surface of the insulator 2, the conductor area ratio of the region, including the wiring pattern 29 and the gap part adjacent to the wiring pattern 29, and not including the through hole land 25, in each of the front surface and the back surface of the insulating material 2, that is, the conductor area ratio of the wiring pattern 29 in the region not including the through hole land 25 in the front surface and the back surface of the insulator 2 is 50% or less.
(16) When the width of the wiring pattern 29 is less than 2.0 m, the variation in size becomes large, and it is difficult to form the wiring pattern 29 with high accuracy. On the other hand, when the width of the wiring pattern 29 is more than 25 m or the conductor area ratio of the wiring pattern 29 is more than 50%, the difference in the degree of current concentration between the lid plating conductor 28 and the wiring pattern 29 is small, and there tends to be only a small difference between the conductor thickness of the lid plating conductor 28 and the conductor thickness of the wiring pattern 29, which are undesirable.
(17) Note that, in
(18) Next, a method for manufacturing the wiring substrate shown in
(19) To manufacture the wiring substrate, first, as shown in
(20) Next, as shown in
(21) Subsequently, as shown in
(22) Next, as shown in
(23) Next, physical polishing is performed on the front surface side and the back surface side of the substrate, respectively. As a result, as shown in
(24) Next, as shown in
(25) Subsequently, the copper of the part of the surface layer conductor (copper foil 1 and conductor 3) that is not covered with the etching resist 23 is removed by etching, and after that, the etching resist 23 is removed as shown in
(26) Next, as shown in
(27) Next, as shown in
(28) Resist openings 26 and 27 shown in
(29) Next, electrolytic copper plating treatment is performed on the substrate on which the plating resist 5 is formed. As a result, the lid plating conductors and wiring patterns are formed inside the resist openings 26 and 27. The electrolytic copper plating formed inside the resist openings 26 corresponds to the lid plated conductors 28, and the electrolytic copper plating formed inside the resist openings 27 corresponds to the wiring patterns 29. After that, as shown in
(30) Then, as shown in
(31) In the case of forming a fine wiring pattern 29 whose dimension in the width direction is smaller than 20 m using the semi-additive method, the current concentrates during electrolytic plating, and the thickness T2 of the wiring pattern 29 becomes thick. On the other hand, when a relatively large lid plating conductor 28 having a diameter exceeding 140 m is formed, the current does not concentrate, and therefore the plating thickness T3 of the lid plating conductor 28 becomes relatively small. Generally, the difference between the thickness T2 of the wiring pattern 29 and the plating thickness T3 of the lid plating conductor 28 is determined by the characteristics of the plating bath, but by adjusting the thickness T1 of the through hole land 25, the height T4 of the conductor around the through hole can be adjusted.
(32) That is, in the embodiment of the present invention, the through hole land 25 provided in advance has the thickness T1. Therefore, the conductor around the through hole can be formed with a thickness (that is, the thickness T4) that is the sum of the thickness T1 of the through hole land 25, the thickness of the electrolytic copper plating 4, and the plating thickness T3 of the lid plating conductor 28. Further, this is not limited to the area over the through hole 21, and, for example, by forming the etching resist 23 shown in
(33) After that, insulating layers and conductor layers are alternately laminated on at least one of the front surface and the back surface of the wiring substrate. In this lamination process, the steps of forming interlayer conductivity and circuit are repeated as appropriate. A multilayer wiring substrate (multilayer printed wiring board) is thus completed.
Advantageous Effects of the Embodiment
(34) According to the embodiment of the present invention, since the conductor for forming the through hole land is thin (thickness T1), the etching amount for forming the through hole land is suppressed, and through holes can be formed with a narrower pitch than the related art.
(35) This will be described with reference to
(36)
(37) Here, at the time the copper in the parts not covered with the etching resist 123 of the electrolytic copper plating 104 and the surface layer conductor (the copper foil 101 and the copper conductor 103) is removed by etching, the thickness of the copper part under the etching resist 123 is the thickness T11 which is obtained by adding the thickness of the through hole land 125 and the thickness of the lid plating conductor 128.
(38) On the other hand,
(39) Here, at the time the copper in the part not covered with the etching resist 23 of the surface layer conductor (the copper foil 1 and the copper conductor 3) is removed by etching, the thickness of the copper part under the etching resist 23 is the thickness T1 of the through hole land 25. The thickness T1 of the through hole land 25 is not only less than the thickness T11 which is the sum of the thickness of the conventional through hole land 125 and the thickness of the lid plating conductor 128, but it has a value of 1.0 to 10 m, which is smaller than the thickness of the through hole land 125 itself.
(40) Therefore, as can be seen by comparing
(41) Further, in the present embodiment, the lid plating conductors 28 and the wiring patterns 29 are formed by the semi-additive method. As a result, it is possible to form wiring patterns 29 that are finer (for example, the width of the wiring/gap is smaller than 30 m) than the conventional ones.
(42) Further, in the present embodiment, before forming the lid plating conductors 28 and the wiring patterns 29, surface layer conductors having a thickness T1 are formed in advance around the through holes 21. As a result, with respect to the wiring pattern 29, which tends to have an increased plating thickness due to the current concentration during plating, it is possible to increase the height (from the front surface or the back surface of the insulator 2) of the lid plating conductor 28, which tends to have a reduced thickness due to the small current concentration, as well as the height of the solid part. Therefore, it is possible to reduce the variation in height of the thickness T2 of the wiring pattern 29, the conductor thickness around the through hole 21, and the solid part.
(43) Further, in the present embodiment, the through hole 21 imparted with conductivity by the conductor 3 is filled with the hole filling resin 22 by screen printing or the like. In this step, the hole filling resin 22 is printed so as to overhang 5 m or more on the front surface side and the back surface side of the substrate, respectively. After that, the hole filling resin 22 is cured and polished. This polishing adjusts the height of the hole filling resin 22 and height of the conductor 3 to be the same. As a result, the through hole land 25 are not greatly recessed or protruded. Therefore, it is possible to reduce the incidence of via connection failure between the through hole land 25 and the build-up layer formed thereon.
(44) According to the configuration described above, it is possible to easily make the filling of the through holes 21 and the formation of the fine wiring patterns 29 compatible with each other. As a result, it is possible to manufacture, as the finished product, a wiring board or a multilayer printed wiring board having high mountability and fine wiring with high yield.
Other Embodiments
(45) The embodiment of the present invention described above is merely an example and does not limit the present invention. Therefore, the present invention can be modified without departing from the gist thereof.
(46) For example, the through hole 21 may be formed by laser processing, or a conductive paste may be used as the filler for filling the through hole 21. Further, the etching resist 23 and the plating resist 5 may be in a liquid form and formed on the substrate by spin coating or roll coating. In addition, when the adhesion between the electrolytic copper plating 4 and the hole filling resin 22 in
EXAMPLES
Examples
(47) A wiring substrate was prepared by the following process.
(48) A double-sided copper-clad laminate was used which comprises, as the insulator 2, a glass cloth impregnated with epoxy resin (thickness of the insulating layer: 800 m, thickness of the copper foil with primer resin: 12 m), and a hydrogen peroxide/sulfuric acid etching solution was applied to both of the sides to thin down the copper foil 1 to be 3 m (
(49) Next, a through hole 21 having a diameter of 105 m was formed at a desired position of the substrate by a mechanical drill (
(50) Subsequently, after performing desmear treatment in the through hole 21 with an aqueous solution containing sodium permanganate, a copper thin film (conductor 3) with a thickness of 0.5 m was formed over the entire surface of the substrate by electrolytic copper plating, and electrolytic copper plating was carried out to produce a thickness of 10 m using a bath with good throwing power for through hole plating (
(51) Further, an insulating resin (hole filling resin 22) dedicated for hole filling was filled in the through hole 21 with a screen printing machine (
(52) Then, on each side of the substrate, a dry film resist with a thickness of 15 m was laminated as the etching resist 23 with a hot roll laminator, and pattern exposure was carried out using a glass mask and a contact exposure machine (with manufacturer-recommended exposure amount).
(53) Subsequently, development using a conveyor/sprayer device (treatment time: 2.5 times the breakpoint) (
(54) An aqueous solution of sodium permanganate was applied to the entire surface of the substrate to roughen the surface of the hole filling resin 22. Then, electrolytic copper plating for the semi-additive method was carried out for 20 minutes to form electrolytic copper plating 4 having a thickness of 1.0 m (
(55) A dry film (with a thickness of 25 m and high resolution) was pasted by a hot roll laminator as the plating resist 5. Exposure was carried out by a stepper exposure machine (with a manufacturer-recommended exposure amount) and development was carried out by a conveyor/sprayer device (treatment time: 2.5 times the breakpoint) (
(56) Next, pattern plating was carried out using an electrolytic copper plating device for pattern plating, and peeling was performed using a spray device (amine peeling liquid; treatment time: 4 times the lifting point) to form lid plating conductors 28 and wiring patterns 29 (
(57) Subsequently, the electrolytic copper plating 4 of the electrical power supply layer was removed with a hydrogen peroxide/sulfuric acid etching solution (
(58) In the wiring board formed by the above method, it was able to form the wiring pattern 29 (see
(59) Regarding the thickness T2 of the wiring pattern 29 in a part where the copper area ratio is less than 50% as seen locally as 1 mm square, and the thickness T3 of the lid plating conductor 28 having a large area, if they are formed to be 15 m using an electrolytic copper plating device for ordinary via fill/pattern plating, the thickness T2 of the wiring pattern 29 will be greater by about 3 to 4 m than the thickness T3 of the lid plating conductor 28. However, in the present example, by adding the thickness T1 of the through hole land 25 of 4 m in total to the through hole part, the height T4 of the lid plating conductor 28 can be closer to the height of the wiring pattern 29 (that is, the sum of the thickness of the electrolytic copper plating 4 and the thickness T2 of the wiring pattern 29).
(60) Thus, a core layer (wiring board) of a multilayer printed wiring board provided with the through hole 21 and the fine wiring pattern 29, and having high flatness as the base of the build-up layer was manufactured.
Comparative Example 1
(61) Regarding the thickness T1 of the through hole lands 25, it is possible to polish it to below 1.0 m, but since this will eliminate the effect of controlling the thickness T4, which is the effect of the embodiment of the present invention, it was impossible to adopt this.
Comparative Example 2
(62) Further, when the thickness T1 of the through hole lands 25 exceeds 10 m, the pattern may damage the surface of the roll at the time of forming the plating resist, and also, the thickness T4 may exceed 25 m during pattern plating, and the resolution of the plating resist may be deteriorated. Therefore, it was unsuitable for practical use of the present invention.
Comparative Example 3
(63) In addition, the design in which the diameter D2 of the through hole lands 25<the diameter D3 of the resist openings 26 is not recommended because it deviates from the gist of the present invention that the through hole pitch can be narrowed. Further, during plating in the semi-additive method, if there is not enough space between the plating resist 5 and the through hole land 25, the problem may occur that a very narrow gap is generated and a plating conductor is not formed due to insufficient replacement of the plating solution, and hence it cannot be adopted in the present invention.
Comparative Example 4
(64) Further, regarding
Conclusion
(65) The Example have been compared with the Comparative Examples 1 to 4, and it has been found that the thickness T1 (the thickness of the through hole lands 25) of the surface layer conductor after polishing needs to be 1.0 m or more and 10 m or less.
(66) Further, it has been found that, in the case where the lid plating conductor 28 is formed by the semi-additive method, the diameter D4 of the lid plating conductors 28 is required to be less than the diameter D2 of the through hole lands 25 (D2>D4).
(67) In addition, it has been found that the widths W2 and W4 of the wiring pattern 29 need to be 25 m or less. Note that W2 and W4 are preferably 2.0 m or greater because when W2 or W4 is less than 2.0 m, the variation in size becomes large and formation with high accuracy becomes difficult to achieve.
(68) Further, for example, in the region A shown in
REFERENCE SIGNS LIST
(69) 1 . . . Copper foil; 2 . . . Insulator; 3 . . . Conductor; 4 . . . Electrolytic copper plating; 5 . . . Plating resist; 21 . . . Through hole; 22 . . . Hole filling resin; 23 . . . Etching resist; 24 . . . Through hole conductor; 25 . . . Through hole land; 25a . . . Copper foil 25b . . . Conductor; 26 . . . Resist opening; 27 . . . Resist opening; 28 . . . Lid plating conductor (formed by semi-additive method); 29 . . . Wiring pattern (formed by semi-additive method); 101 . . . Copper foil; 102 . . . Insulator; 103 . . . Conductor; 104 . . . Electrolytic copper plating; 121 . . . Through hole; 122 . . . Hole filling resin; 123 . . . Etching resist; 124 . . . Through hole conductor; 125 . . . Through hole land; 125a . . . Copper foil; 125b . . . Conductor; 128 . . . Lid plating conductor; A . . . Region (region including wiring pattern and gap part and not including lid plating conductor); D1 . . . Diameter of through hole; D2 . . . Diameter of through hole land; D3 . . . Diameter of resist opening; D4 . . . Diameter of lid plating conductor; S1 . . . Undercut amount of conventional method; S2 . . . Undercut amount of present invention; T1 . . . Thickness of through hole land (thickness of surface layer conductor (copper foil 1 and conductor 3) after polishing); T2 . . . Thickness of wiring pattern; T3 . . . Thickness of lid plating conductor; T4 . . . Height of lid plating conductor (sum of T1, thickness of electrolytic copper plating 4, and T3); T11 . . . Sum of thickness of through hole land and thickness of lid plating conductor; W1, W3, W5 . . . Width of gap part; W2, W4 . . . Width of wiring pattern.