Edge-emitting semiconductor laser and method for operating a semiconductor laser

Abstract

An edge-emitting semiconductor laser and a method for operating a semiconductor laser are disclosed. The edge-emitting semiconductor laser includes an active zone within a semiconductor layer sequence and a stress layer. The active zone is configured for being energized only in a longitudinal strip perpendicular to a growth direction of the semiconductor layer sequence. The semiconductor layer sequence has a constant thickness throughout in the region of the longitudinal strip so that the semiconductor laser is gain-guided. The stress layer may locally stress the semiconductor layer sequence in a direction perpendicular to the longitudinal strip and in a direction perpendicular to the growth direction. A refractive index of the semiconductor layer sequence, in regions which, seen in plan view, are located next to the longitudinal strip, for the laser radiation generated during operation is reduced by at least 210.sup.4 and by at most 510.sup.3.

Claims

1. An edge-emitting semiconductor laser comprising: an active zone within a semiconductor layer sequence; and a stress layer; wherein the active zone is configured to be energized only in a longitudinal strip perpendicular to a growth direction of the semiconductor layer sequence, wherein the semiconductor layer sequence has a constant thickness throughout in a region of the longitudinal strip so that the semiconductor laser is gain-guided so that a resonator is defined by an energization region of the active zone, and wherein the resonator is free from being defined by a strip waveguide; wherein a spacing between the stress layer and the active zone, in a direction parallel to the growth direction, is at most 5 m; wherein the longitudinal strip is free of the stress layer and the stress layer is disposed only in regions in which no input of current into the semiconductor layer sequence takes place; wherein, as a result of the stress layer, the semiconductor layer sequence is mechanically stressed in a direction perpendicular to the longitudinal strip and in a direction perpendicular to the growth direction so that a refractive index next to the longitudinal strip, seen in plan view, for laser radiation generated during operation is reduced by at least 210.sup.4 and by at most 510.sup.3 thereby obtaining index guidance of the laser radiation; and wherein the edge-emitting semiconductor laser comprises an electrical contact structure that energizes the longitudinal strip, wherein the electrical contact structure partly covers the stress layer and has a T-shaped cross-section.

2. The semiconductor laser according to claim 1, wherein tensile stress induced by the stress layer is at least 50 MPa and at most 0.5 GPa, and wherein a spacing between the stress layer and the active zone in a direction parallel to the growth direction is at least 0.1 m.

3. The semiconductor laser according to claim 1, wherein the longitudinal strip is free of the stress layer, and wherein a thickness of the stress layer is between 40 nm and 0.3 m inclusive and the thickness of the stress layer does not vary.

4. The semiconductor laser according to claim 1, wherein at least one passivation layer is located between the stress layer and the semiconductor layer sequence so that the stress layer does not touch the semiconductor layer sequence.

5. The semiconductor laser according to claim 1, wherein the stress layer is located directly on the semiconductor layer sequence.

6. The semiconductor laser according to claim 1, wherein the stress layer is composed of a plurality of sublayers.

7. The semiconductor laser according to claim 1, further comprising an electrical contact structure, wherein the stress layer is different from the electrical contact structure, and wherein the stress layer is electrically conducting.

8. The semiconductor laser according to claim 1, wherein the stress layer essentially consists of a metal oxide.

9. The semiconductor laser according to claim 8, wherein the stress layer is made of TiO.sub.2.

10. The semiconductor laser according to claim 1, wherein the stress layer essentially consists of a semiconductor material, and wherein the stress layer is at least partially grown epitaxially.

11. The semiconductor laser according to claim 1, wherein the stress layer essentially consists of a dielectric nitride or oxide.

12. The semiconductor laser according claim 1, wherein the stress layer has a roughened surface on a side facing towards the semiconductor layer sequence so that by the roughened surface an interlocking engagement with a material abutting the stress layer in a direction towards the semiconductor layer sequence is created, and adhesion of the stress layer to that material is geometrically enhanced.

13. The semiconductor laser according to claim 1, wherein a reduction in the refractive index brought about by the stress layer takes place on both sides of the longitudinal strip across a region having in each case a width of at most 30% of a width of the longitudinal strip, and wherein the refractive index is otherwise constant.

14. The semiconductor laser according to claim 1, wherein trenches having oblique side faces are formed in the semiconductor layer sequence parallel to the longitudinal strip and on both sides of the longitudinal strip, and wherein a spacing between the longitudinal strip and the trenches is in each case at least 20 m and the trenches do not contribute to a guidance of the laser radiation in a direction parallel to the longitudinal strip.

15. The semiconductor laser according to claim 1, wherein the stress layer is applied with a thickness gradient so that a thickness of the stress layer increases from the outside in the direction towards the longitudinal strip, seen in cross-section perpendicular to the longitudinal strip.

16. The semiconductor laser according to claim 1, wherein the stress layer has a constantly increasing or a constantly decreasing width in a direction towards an outcoupling side of the laser radiation.

17. A method comprising: operating the edge-emitting semiconductor laser according to claim 1, wherein a tensile stress in the semiconductor layer sequence as a result of the stress layer occurs only during operation of the semiconductor laser on approaching an operating temperature.

18. The semiconductor laser according to claim 1, wherein the stress layer is located on a side of a passivation layer remote from the semiconductor layer sequence, and wherein the stress layer directly adjoins the semiconductor layer sequence in regions.

19. An edge-emitting semiconductor laser comprising: an active zone within a semiconductor layer sequence; and a stress layer; wherein the active zone is configured for being energized only in a longitudinal strip perpendicular to a growth direction of the semiconductor layer sequence, wherein the semiconductor layer sequence has, in a region of the longitudinal strip, a constant thickness throughout so that the semiconductor laser is gain-guided, wherein, as a result of the stress layer, the semiconductor layer sequence is mechanically stressed in a direction perpendicular to the longitudinal strip and in a direction perpendicular to the growth direction, so that a refractive index next to the longitudinal strip, seen in plan view, for laser radiation generated during operation is reduced by at least 210.sup.4 and by at most 510.sup.3, and accordingly index guidance of the laser radiation is obtained; wherein the stress layer is located on a side of a passivation layer remote from the semiconductor layer sequence; wherein the stress layer extends, in a region close to an electrical contact structure which energizes the longitudinal strip, as far as the semiconductor layer sequence so that the electrical contact structure partly covers the stress layer and has a T-shaped cross-section; wherein a thickness of the stress layer is at least 100 nm and the stress layer is at at least one of aluminum oxide, titanium dioxide, zinc oxide, zirconium oxide or hafnium oxide; and wherein a spacing between the stress layer and the active zone along the growth direction is at least 0.1 m and at most 5 m.

Description

BRIEF DESCRIPTION OF THE DRAWINGS

(1) A semiconductor laser described herein is elucidated in detail below on the basis of exemplified embodiments and with reference to the drawing. In the individual Figures, elements that are identical are denoted by identical reference numerals, but elements are not shown to scale; rather, the size of individual elements may have been shown exaggerated for the purpose of better understanding.

(2) In the drawings:

(3) FIGS. 1A-1C show a diagrammatic sectional view of an arrangement of a semiconductor laser as well as diagrammatic representations of the optical properties of such a semiconductor laser,

(4) FIGS. 2A-2C and 4-8 show diagrammatic sectional views of semiconductor lasers described herein as well as diagrammatic representations of the optical properties,

(5) FIG. 3 shows a diagrammatic perspective view of a semiconductor laser described herein, and

(6) FIGS. 9 and 10 show diagrammatic plan views of semiconductor lasers described herein.

DETAILED DESCRIPTION OF ILLUSTRATIVE EMBODIMENTS

(7) FIG. 1A shows an arrangement of an edge-emitting semiconductor laser. The semiconductor laser has a semiconductor layer sequence 3 having an active zone 30. The semiconductor layer sequence 3 is located on a substrate 2 to which an electrical contact layer 8 has been applied. On a side of the semiconductor layer sequence 3 remote from the substrate 2 there are located an electrically insulating passivation layer 4 and an electrical contact structure 5. The electrical contact structure 5 has a first sublayer 51 directly on the semiconductor layer sequence 3 and a planar second sublayer 52. A longitudinal strip 33 is defined by means of the first sublayer 51 and the passivation layer 4. In approximate terms, the active zone 30 is energized only in the longitudinal strip 33 or in an x-direction over a very small width beyond the longitudinal strip 33. Laser radiation L is therefore generated substantially only in the region of the longitudinal strip 33.

(8) Furthermore, trenches 7 are present which are spaced a relatively large distance apart from the longitudinal strip 33. The trenches 7 each have a base surface 70 which faces towards the electrical contact layer 8. Obliquely extending side faces 71 face towards the longitudinal strip 33. In a direction parallel to a growth direction G of the semiconductor layer sequence 3, the trenches 7 can extend into the substrate 2. In the region of the longitudinal strip 33 neither the semiconductor layer sequence 3 nor the substrate 2 is patterned.

(9) FIG. 1B illustrates a profile of an intensity I of an emitted laser radiation L along the x-direction. On the one hand, in the region of the longitudinal strip 33 the intensity I has been modulated. On the other hand, a significant proportion of the intensity is also emitted outside the longitudinal strip 33. Accordingly, the laser radiation L is significantly more widespread relative to the longitudinal strip 33. The laser radiation L is therefore emitted with a comparatively poor beam parameter product.

(10) Finally, FIG. 1C shows a profile of the refractive index n along the x-direction. The refractive index n especially of the active zone 30 is constant in the entire region at and around the longitudinal strip 33. Thermal effects have not been considered in detail in FIG. 1C. In particular, the fact that the refractive index profile can have been modified by a lateral temperature gradient has not been taken into account.

(11) FIG. 2A shows, in illustrations analogous to , an exemplified embodiment of an edge-emitting semiconductor laser 1. The semiconductor laser 1 has, in addition, a stress layer 6. The stress layer 6, which has been applied throughout except for the longitudinal strip 33, is located directly on the semiconductor layer sequence 3 and optionally in the region of the trenches 7 also directly on the substrate 2. The stress layer 6 is completely separated from the electrical contact structure 5 by the passivation layer 4. The stress layer 6 is formed, for example, by a titanium dioxide layer having a thickness of approximately 100 nm.

(12) As a result of the stress layer 6, an increased refractive index is achieved in the region of the longitudinal strip 33, see FIG. 2C. At the edges of the longitudinal strip 33 the refractive index n falls comparatively sharply to a lower value which is present in other regions outside the longitudinal strip 33. The fall in the refractive index commences at the point where the stress layer 6 begins, preferably with a tolerance of at most 25% or 10% or 5% of the width of the longitudinal strip 33 along the x-direction.

(13) Such an increased refractive index n in the region of the longitudinal strip 33 results in index guidance of the laser radiation L, so that the laser radiation L is emitted in a region that is better defined and narrower along the x-direction, see FIG. 2B. Accordingly, a smaller beam parameter product is achieved.

(14) The exemplified embodiment of FIG. 2A otherwise corresponds to the arrangement shown in FIG. 1A. The trenches 7 are optional, as are the electrical contact layer 8 over the whole area and the multi-layered construction of the electrical contact structure 5.

(15) Possible alternative ways of reducing a width of the light emission of the laser radiation L lie in selecting narrower contact strips in the form of the longitudinal strips 33. However, this is associated in particular with a light emission width that is not current-independent and, usually, with an increase in beam divergence. Furthermore, current density and power density are increased, which can result in reduced component reliability. It is also possible to etch the semiconductor layer sequence so as to obtain stronger index guidance by a ridge waveguide. A narrower light emission width in the x-direction is achieved as a result, but on the other hand this leads to increased beam divergence and therefore to adverse effects on the beam parameter product.

(16) In the exemplified embodiment of FIG. 3 it can be seen that the longitudinal strip 33 extends along a y-direction that is oriented perpendicular to the x-direction and perpendicular to the growth direction G. A region of an emission surface of the laser radiation L is indicated by hatching.

(17) Departing from FIG. 2A, the stress layer 6 according to FIG. 3 is located on a side of the passivation layer 4 remote from the semiconductor layer sequence 3. Optionally it is possible for the stress layer 6 close to the electrical contact structure 5 to extend as far as the semiconductor layer sequence 3. The electrical contact structure 5 partly covers the stress layer 6 and is T-shaped seen in cross-section.

(18) Departing from the illustration in FIG. 3, the electrical contact structure 5 can be configured as in FIG. 2A, as is also possible in all other exemplified embodiments. In particular, a second sublayer 52 can be present which completely or substantially completely covers the stress layer 6. Furthermore, trenches 7 are preferably present, especially as illustrated in FIG. 2A.

(19) In the exemplified embodiment of FIG. 4 the stress layer 6 increases in thickness in a direction towards the electrical contact structure 5. The increase in the thickness of the stress layer 6 is preferably configured so as to be symmetrical with respect to the longitudinal strip 33. The contact structure 5, the passivation layer 4 and the stress layer 6 can terminate flush with one another. Optionally the contact layer 8 is applied only in regions on the side of the substrate 2 remote from the semiconductor layer sequence 3.

(20) In the exemplified embodiment of the semiconductor laser 1 as illustrated in FIG. 5, the stress layer 6 has a roughened surface 66. According to FIG. 5, the roughened surface 66 is located between the stress layer 6 and the passivation layer 4.

(21) Such variations in the thickness of the stress layer 6, see FIG. 4, and such roughened surfaces 66, see FIG. 5, can also be present in the other exemplified embodiments. The relative positions of the stress layer 6 and the passivation layer 4 can be interchanged in each case. Furthermore, it is also possible to combine variations in thickness and roughened surfaces 66 with one another in a single exemplified embodiment. Departing from the illustration in FIG. 5, the roughened surface 66 can also have been created directly on the semiconductor layer sequence.

(22) In the exemplified embodiment of FIG. 6 the stress layer 6 is located directly on the semiconductor layer sequence 3 and serves to define the longitudinal strip 33. The stress layer 6 is formed, for example, by a metal such as gold or titanium, as is also possible in all other exemplified embodiments. Accordingly, the stress layer 6 can be electrically conducting and also constitute a part of the electrical contact structure 5.

(23) The passivation layer 4 and the stress layer 6 can be of the same thickness or, unlike what is shown in FIG. 6, of different thicknesses from one another. In particular, the stress layer 6 can be thicker than the passivation layer 4 and optionally cover the passivation layer 4 in places. Conversely, the passivation layer 4 can be thicker than the stress layer 6 and/or the stress layer 6 is partly covered by the passivation layer 4.

(24) In the exemplified embodiment as illustrated in FIG. 7 the stress layer 6 is in the form of a sublayer of the electrical contact structure 5. The stress layer 6 can have been applied to larger regions of the semiconductor layer sequence 3 than the remaining sublayers 51 and/or 52 of the contact structure 5.

(25) The exemplified embodiment of FIG. 8 illustrates that the stress layer 6 is composed of the sublayers 6a, 6b. The sublayers 6a, 6b are preferably made of different materials from one another, for example, of a semiconductor material in combination with a metal or of a metal in combination with a dielectric material or with a metal oxide. The sublayers 6a, 6b can have different base surfaces from one another, seen in plan view. Departing from FIG. 8, it is possible for the sublayers 6a, 6b to be arranged congruently with one another.

(26) Furthermore, it is possible, for example, for the stress layers 6 of the exemplified embodiments of FIG. 2 to 5 or 8 to be combined with the stress layers 6 from the exemplified embodiments of FIG. 6 or 7. Accordingly, there can be a plurality of stress layers 6 in a single semiconductor laser 1.

(27) The modification of the refractive index n by the stress layer 6 can be demonstrated, for example, by microphotoluminescence measurements on a facet of the semiconductor lasers 1. Microphotoluminescence makes it possible to determine distortions in a crystal lattice which are associated with the different refractive index n.

(28) FIGS. 9 and 10 show plan views onto further exemplified embodiments of the semiconductor laser 1. The stress layer 6 is in each case matched to the width of the light field in the resonator. In particular, on account of a thermal lens effect, an effective width of the stress layer 6 is smaller at an outcoupling side. The stress layer 6 can partly overlap the longitudinal strip 33, seen in plan view. Such overlapping is possible, for example, as a result of the stress layer 6 being electrically conducting and/or as a result of the stress layer 6 being located in regions between the sublayers 51, 52 of the electrical contact structure 5.

(29) According to FIG. 9, the stress layer 6 is located for the most part next to the longitudinal strip 33. A spacing between the two strips of material from which the stress layer 6 is composed becomes smaller only directly at and close to the outcoupling side, so that a spacing between the strips of material is at its smallest directly at the outcoupling side. Departing from the illustration in FIG. 9, it is possible for the strips of material not to overlap the longitudinal strip but to be placed completely next to the longitudinal strip 33.

(30) The region in which the strips of material of the stress layer 6 overlap the longitudinal strip 33 and/or in which their spacing from one another becomes smaller has an extent, from the outcoupling side, of, for example, at least 2 m or 10 m or 50 m and/or of at most 200 m or 100 m or 40 m. A mean spacing between the material strips and the longitudinal strip in the larger, non-overlapping subarea is, for example, at least 1 m or 5 m or 20 m and/or at most 100 m or 30 m or 5 m. The spacing between the strips of material close to the outcoupling side runs especially in accordance with a quadratic root function.

(31) In FIG. 10 the stress layer 6 is formed by a single strip of material. In comparison with FIG. 9, the strip of material in FIG. 10 is in the form of a negative. Taking this into account, the explanatory remarks made in relation to the stress layer 6 in connection with FIG. 9 apply analogously to FIG. 10.

(32) The description of the invention described herein with reference to the exemplified embodiments does not limit the invention thereto; rather, the invention encompasses any novel feature and any combination of features, including in particular any combination of features in the patent claims, even if that feature or that combination is not itself explicitly defined in the patent claims or exemplified embodiments.