Method for Manufacturing Perovskite Solar Cell Module and Perovskite Solar Cell Module

Abstract

Disclosures of the present invention mainly describe a method for manufacturing perovskite solar cell module. At first, a laser scribing is adopted for forming multi transparent conductive films (TCFs) on a transparent substrate. Subsequently, by using a first mask, multi HTLs, active layers, and ETLs are sequentially formed on the TCFs. Consequently, by the use of a second make, each of the ETLs is formed with an electrically connecting layer thereon, such that a perovskite solar cell module comprising a plurality of solar cell units is hence completed on the transparent substrate. It is worth explaining that, during the whole manufacturing process, each of the solar cell units is prevented from receiving bad influences that are provided by laser scribing or manufacture environment, such that each of the solar cell units is able to exhibit outstanding photoelectric conversion efficiency.

Claims

1. A method for manufacturing perovskite solar cell module, comprising following steps: (1) providing a transparent conductive substrate that comprises a transparent substrate and a transparent conductive layer formed on the transparent substrate; (2) scribing the transparent conductive layer by using a laser beam, thereby forming a plurality of scribe lines on the transparent conductive layer, such that the transparent conductive layer is divided into a plurality of transparent conductive films by the plurality of scribe lines; (3) positioning a first mask over the plurality of transparent conductive films, and then forming a hole transport film on each of the plurality of transparent conductive films through the first mask, wherein the hole transport film has a thickness in a range between 5 nm and 60 nm; (4) letting the first mask be disposed over the plurality of hole transport films, and subsequently forming an active layer on each of the plurality of hole transport films by using the first mask in combination with a vacuum coating apparatus, wherein a vacuum coating temperature of the vacuum coating apparatus is modulated to be in a range between 70 C. and 150 C., and a layer width of each of the plurality of active layers and a layer width of each of the plurality of transparent conductive films having a width ratio that is in a range between 0.75 and 9; (5) positioning the first mask over the plurality of active layer, and then forming an electron transport film on each of the plurality of active layers by using the first mask in combination with the vacuum coating apparatus, wherein a flow rate of an oxygen feeding into the vacuum coating apparatus is modulated to be in a range between 0.1 sccm and 5 sccm; and (6) disposing a second mask over the plurality of electron transport films, and subsequently forming an electrical connection layer on each of the plurality of electron transport films through the second mask.

2. The method of claim 1, wherein the transparent conductive layer is made of a transparent conductive material that is selected from the group consisting of indium tin oxide (ITO), fluorine-doped tin oxide (FTO), indium zinc oxide (IZO), gallium doped zinc oxide (GZO), and aluminum-doped zinc oxide (AZO).

3. The method of claim 1, wherein the hole transport film is made of an oxide that is selected from the group consisting of NiO and MoO.sub.3.

4. The method of claim 1, wherein a manufacturing material of the electron transport film is selected from the group consisting of fullerene (C.sub.60), fullerene derivative (PCBM), TiO.sub.2, and ZnO.

5. The method of claim 1, wherein the active layer has a chemical formula of A.sub.xB.sub.1xCD.sub.yE.sub.3y, wherein x is an integer in a range between 0 and 1, y being an integer in a range between 0 and 3, A and B being both an positive ion that is selected from the group consisting of Cs.sup.+, CH.sub.3NH.sub.3.sup.+ and H.sub.2NCHNH.sub.2.sup.+, and D and E being both an negative ion that is selected from the group consisting of Cl.sup., Br.sup. and I.sup..

6. The method of claim 1, wherein a manufacturing material of the electrical connection layer is selected from the group consisting of Al, Ag, and Au.

7. The method of claim 1, wherein there is a pre-processing step arranged between the step (2) and the step (3), and the pre-processing step being configured for applying a surface treatment to the transparent substrate that is formed the plurality of transparent conductive films thereon.

8. The method of claim 1, wherein there is a thermal annealing step arranged between the step (3) and the step (4), and the thermal annealing step being configured for applying a thermal annealing treatment to the transparent substrate that is formed the plurality of hold transport films and the plurality of transparent conductive films thereon, wherein a processing temperature of the thermal annealing treatment is in a range between 300 C. and 500 C.

9. The method of claim 5, wherein the step (4) comprises following detail steps: (41) positioning the first mask over the plurality of hole transport films; (42) forming a first material layer on each of the plurality of hole transport films through the first mask, wherein the first material layer is made of a metal halide that is selected from the group consisting of PbCl.sub.2, PbBr.sub.2, PbI.sub.2, SnI.sub.2, and GeI.sub.2; (43) forming a second material layer on each of the plurality of first material layer through the first mask, wherein a manufacturing material of the second material layer is selected from the group consisting of CsCl, CsBr, CsI, CH.sub.3NH.sub.3Cl, CH.sub.3NH.sub.3Br, CH.sub.3NH.sub.3I, and H.sub.2NCHNH.sub.2I; and (44) forming the respective active layers that has a range between 200 nm and 500 nm on the respective hole transport films after a reaction between each of the plurality of first material layers and each of the plurality of second material layers is completed.

10. The method of claim 1, wherein a perovskite solar cell module comprising a plurality of perovskite solar cell units is therefore fabricated after the steps 1-9 are completed.

11. A perovskite solar cell module, comprising: a transparent conductive substrate, comprising a transparent substrate and a transparent conductive layer formed on the transparent substrate; a plurality of scribe lines, forming on the transparent conductive layer, so as to divide the transparent conductive layer into a plurality of transparent conductive films; a plurality of hole transport films, being respectively formed on the plurality of transparent conductive films, wherein each of the plurality of hole transport films has a thickness in a range between 5 nm and 60 nm; a plurality of active layers, being respectively formed on the plurality of hole transport films, wherein a layer width of each of the plurality of active layers and a layer width of each of the plurality of transparent conductive films have a width ratio that is in a range between 0.75 and 9; a plurality of electron transport films, being formed on the plurality of active layers, respectively; and a plurality of electrical connection layers, being formed on the plurality of electron transport films, respectively; wherein a plurality of perovskite solar cell units are provided on the transparent substrate, and each of the plurality of perovskite solar cell units comprising one of the plurality of transparent conductive films, one of the plurality of hole transport films, one of the plurality of active layers, one of the plurality of electron transport films, and one of the plurality of electrical connection layers.

12. The perovskite solar cell module of claim 11, wherein the transparent conductive layer is made of a transparent conductive material that is selected from the group consisting of indium tin oxide (ITO), fluorine-doped tin oxide (FTO), indium zinc oxide (IZO), gallium doped zinc oxide (GZO), and aluminum-doped zinc oxide (AZO).

13. The perovskite solar cell module of claim 11, wherein the hole transport film is made of an oxide that is selected from the group consisting of NiO and MoO.sub.3.

14. The perovskite solar cell module of claim 11, wherein a manufacturing material of the electron transport film is selected from the group consisting of fullerene (C.sub.60), fullerene derivative (PCBM), TiO.sub.2, and ZnO.

15. The perovskite solar cell module of claim 11, wherein the active layer has a chemical formula of A.sub.xB.sub.1xCD.sub.yE.sub.3y, wherein x is an integer in a range between 0 and 1, y being an integer in a range between 0 and 3, A and B being both an positive ion that is selected from the group consisting of Cs.sup.+, CH.sub.3NH.sub.3.sup.+ and H.sub.2NCHNH.sub.2.sup.+, and D and E being both an negative ion that is selected from the group consisting of Cl.sup., Br.sup. and I.sup..

16. The perovskite solar cell module of claim 11, wherein a manufacturing material of the electrical connection layer is selected from the group consisting of Al, Ag, and Au.

Description

BRIEF DESCRIPTION OF THE DRAWINGS

[0026] The invention as well as a preferred mode of use and advantages thereof will be best understood by referring to the following detailed description of an illustrative embodiment in coninterfacial with the accompanying drawings, wherein:

[0027] FIG. 1 shows a cross-sectional view of a conventional perovskite solar cell;

[0028] FIG. 2 shows a cross-sectional view of a perovskite solar cell module according to the present invention;

[0029] FIG. 3 shows a stereo diagram for depicting a substrate and a transparent conductive layer of the perovskite solar cell module;

[0030] FIG. 4 shows a flowchart diagram of a method for manufacturing perovskite solar cell module according to the present invention;

[0031] FIG. 5 shows a schematic diagram for describing the manufacturing process of the perovskite solar cell module;

[0032] FIG. 6 shows a schematic diagram for describing the manufacturing process of the perovskite solar cell module;

[0033] FIG. 7 shows a schematic diagram for describing the manufacturing process of the perovskite solar cell module;

[0034] FIG. 8 shows a schematic diagram for describing the manufacturing process of the perovskite solar cell module;

[0035] FIG. 9 shows a schematic diagram for describing the manufacturing process of the perovskite solar cell module;

[0036] FIG. 9A shows a schematic diagram for describing a two-step manufacturing process;

[0037] FIG. 10 shows a schematic diagram for describing the manufacturing process of the perovskite solar cell module; and

[0038] FIG. 11 shows a schematic diagram for describing the manufacturing process of the perovskite solar cell module.

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0039] To more clearly describe a method for manufacturing perovskite solar cell module and a perovskite solar cell module that are disclosed by the present invention, embodiments of the present invention will be described in detail with reference to the attached drawings hereinafter.

[0040] Perovskite Solar Cell Module Comprising a Plurality of Solar Cell Units

[0041] With reference to FIG. 2, there is shown a cross-sectional view of a perovskite solar cell module according to the present invention. As FIG. 2 shows, the perovskite solar cell module 1 of the present invention comprises: a transparent conductive substrate 10, a plurality of scribe lines 10G, a plurality of hole transport films 11, a plurality of active layers 12, a plurality of electron transport films 13, and a plurality of electrical connection layers 14. In which, the transparent conductive substrate 10 consists of a transparent substrate 101 and a transparent conductive layer 102 formed on the transparent substrate 101. In one practicable embodiment, the transparent conductive layer 102 is made of a transparent conductive material that is selected from the group consisting of indium tin oxide (ITO), fluorine-doped tin oxide (FTO), indium zinc oxide (IZO), gallium doped zinc oxide (GZO), and aluminum-doped zinc oxide (AZO).

[0042] Continuously referring to FIG. 2, and please simultaneously refer to FIG. 3, which illustrates a stereo diagram for depicting the substrate 101 and the transparent conductive layer 102. In the present invention, a laser beam is utilized for carrying out a laser scribing process so as to achieve a patterning process on the transparent conductive layer 102. As FIG. 2 and FIG. 3 show, the laser beam scribes the transparent conductive layer 102, thereby forming a plurality of scribe lines 10G on the transparent conductive layer 102, such that the transparent conductive layer 102 is divided into a plurality of transparent conductive films 10F by the plurality of scribe lines 10G.

[0043] On the other hand, the plurality of hole transport films 11 are formed on the plurality of transparent conductive films 10F, respectively. Moreover, the plurality of active layers 12 are further formed on the plurality of hole transport films 11, respectively. In which, the hole transport film 11 is made of an oxide that is selected from the group consisting of NiO and MoO.sub.3.

[0044] Moreover, the present invention adopts a photoelectric conversion material to fabricate the active layer 12, wherein the photoelectric conversion material has a chemical formula of A.sub.xB.sub.1xCD.sub.yE.sub.3y. As described more in detail below, x is an integer in a range between 0 and 1, y is an integer in a range between 0 and 3, A and B are both an positive ion that is selected from the group consisting of Cs.sup.+, CH.sub.3NH.sub.3.sup.+ and H.sub.2NCHNH.sub.2.sup.+, and D and E are both an negative ion that is selected from the group consisting of Cl.sup., Br.sup. and I.sup..

[0045] As described more in detail below, the plurality of electron transport films 13 are respectively formed on the plurality of active layers 12, and the plurality of electrical connection layers 14 are formed on the plurality of electron transport films 13, respectively. In one practicable embodiment, the electron transport film 13 is made of a manufacturing material that is selected from the group consisting of fullerene (C60), fullerene derivative (PCBM), TiO2, and ZnO. On the other hand, the electrical connection layer 14 can be made of aluminum (Al), silver (Ag), or gold (Au).

[0046] It is worth noting that, FIG. 2 particularly depicts that a plurality of perovskite solar cell units are provided on the transparent substrate 101, and each of the plurality of perovskite solar cell units comprises one of the plurality of transparent conductive films 10F, one of the plurality of hole transport films 11, one of the plurality of active layers 12, one of the plurality of electron transport films 13, and one of the plurality of electrical connection layers 14. Briefly speaking, the present invention utilizes a laser scribing to firstly form a plurality of transparent conductive films 10F on a transparent substrate 101. Subsequently, a plurality of hole transparent films 11, a plurality of active layers 12, a plurality of electron transparent films 13, and a plurality of electrical connection layers 14 are sequentially formed on the transparent conductive films 10F. Consequently, a perovskite solar cell module 1 comprising a plurality of solar cell units is hence completed on the transparent substrate 101.

[0047] Method for Manufacturing Perovskite Solar Cell Module

[0048] With reference to FIG. 4, there is shown a flowchart diagram of a method for manufacturing perovskite solar cell module according to the present invention. Moreover, FIG. 5 to FIG. 11 show schematic diagrams for describing the manufacturing process of the perovskite solar cell module 1 that is illustrated in FIG. 2. Herein, it needs to firstly explain that, in FIGS. 5-11, diagram (a) is used for describing the manufacturing process by way of presenting a top view of a semi-finished product or a finished product of the perovskite solar cell module. On the other hand, diagram (b) in FIGS. 5-11 is utilized for describing the manufacturing process by way of presenting a cross-sectional view of a semi-finished product or a finished product of the perovskite solar cell module.

[0049] As FIG. 4, FIG. 5 and FIG. 6 show, the method flow is firstly proceeded to step S1: providing a transparent conductive substrate 10 that comprises a transparent substrate 101 and a transparent conductive layer 102 formed on the transparent substrate 101. In one practicable embodiment, a sputtering equipment or an electron beam evaporation apparatus can be adopted for carrying out the forgoing step S1, so as to form an ITO layer (i.e., the transparent conductive layer 102) on the transparent substrate 101. Of course, it is able to purchase a commercial product of the transparent conductive substrate 10, wherein the commercial product comprises a glass substrate and an ITO film formed on the glass substrate.

[0050] From FIG. 4 and FIG. 7, it is understood that the method flow is subsequently proceeded to step S2: scribing the transparent conductive layer 102 by using a laser beam, thereby forming a plurality of scribe lines 10G on the transparent conductive layer 102, such that the transparent conductive layer 102 is divided into a plurality of transparent conductive films 10F by the plurality of scribe lines 10G. Herein, it needs to particularly explain that, the present invention utilizes the laser scribing technology to achieve a patterning process on the transparent conductive layer 102, instead of the normal photolithography technology. The principal reason is that width (i.e., gap between two transparent conductive films 10F) of the scribe line 10G is easy to be controlled in case of the laser scribing technology is adopted for achieving the patterning process of the transparent conductive layer 102. Briefly speaking, in case of using the laser scribing technology, the scribe line 10G can be made to have a smaller width that is able to meet the standard requirements. In spite of the fact that the normal photolithography technology can also be utilized for making the small-width scribe line 10G, toxic chemicals such as photoresist agent and development agent that are adopted in the execution of the photolithography technology are well-known hurting human body.

[0051] As FIG. 4 and FIG. 8 show, the method flow is next proceeded to step S3: positioning a first mask over the plurality of transparent conductive films 10F, and then forming a hole transport film 11 on each of the plurality of transparent conductive films 10F through the first mask, wherein each of the plurality of hole transport films 11 has a thickness in a range between 5 nm and 60 nm. However, before starting the step S3, it needs to apply a surface treatment to the transparent substrate 101 that is formed the plurality of transparent conductive films 10F thereon, such as an ozone-ultraviolet illuminating treatment. It is easy to know that, after the first mask is disposed over the plurality of transparent conductive films 10F, a vacuum film deposition equipment like the electron beam evaporation apparatus is utilized for forming a hole transport film 11 (such as a NiO film) on each of the plurality of transparent conductive films 10F through the first mask. After that, a thermal annealing treatment is subsequently applied to the transparent substrate 101 that is formed the plurality of hold transport films 11 and the plurality of transparent conductive films 10F thereon.

[0052] From FIG. 4 and FIG. 9, it is understood that the method flow is continuously proceeded to step S4: letting the first mask be disposed over the plurality of hole transport films 11, and subsequently forming an active layer 12 on each of the plurality of hole transport films 11 by using the first mask in combination with a vacuum coating apparatus, wherein a vacuum coating temperature of the vacuum coating apparatus is modulated to be in a range between 70 C. and 150 C., and a layer width of each of the plurality of active layers 45 and a layer width of each of the plurality of transparent conductive films 10F having a width ratio that is in a range between 0.75 and 9. Particularly, the present invention adopts a two-step manufacturing process to complete the step S4. FIG. 9A shows a schematic diagram for describing the two-step manufacturing process. As diagram (a) of FIG. 9A shows, during the execution of the two-step manufacturing process, it firstly positions the first mask over the plurality of hole transport films 11, and then forms a first material layer 121 on each of the plurality of hole transport films 11 through the first mask. Next, as diagrams (b) and (c) of FIG. 9A show, a second material layer 122 is subsequently formed on each of the plurality of first material layer 121 through the first mask, thereby forming the respective active layers 12 that has a range between 200 nm and 500 nm on the respective hole transport films 11 after a reaction between each of the plurality of first material layers 121 and each of the plurality of second material layers 122 is completed. For example, thermal evaporation can be used for fabricating the first material layers 121, wherein the first material layer 121 is made of a metal halide that is selected from the group consisting of PbCl.sub.2, PbBr.sub.2, PbI.sub.2, SnI.sub.2, and GeI.sub.2. On the other hand, chemical vapor deposition can be used for fabricating the second material layers 121, wherein a manufacturing material of the second material layer 122 is selected from the group consisting of CsCl, CsBr, CsI, CH.sub.3NH.sub.3Cl, CH.sub.3NH.sub.3Br, CH.sub.3NH.sub.3I, and H.sub.2NCHNH.sub.2I. As a result, after a reaction between each of the plurality of first material layers (PbI.sub.2) 121 and each of the plurality of second material layers (H.sub.2NCHNH.sub.2I) 122 is completed, the respective active layers (H.sub.2NCHNH.sub.2PbI.sub.3) 12 are therefore formed on the respective hole transport films 11.

[0053] As FIG. 4 and FIG. 10 show, the method flow is next proceeded to step S5: positioning the first mask over the plurality of active layer 12, and then forming an electron transport film 13 on each of the plurality of active layers 121 through the first mask. For instance, a thermal evaporation completed by a vacuum coating apparatus can be used for fabricating the electron transport films 13, wherein the electron transport film 13 is made of fullerene (C60), fullerene derivative (PCBM), TiO2, or ZnO. During the thermal evaporation, a flow rate of an oxygen feeding into the vacuum coating apparatus is modulated to be in a range between 0.1 sccm and 5 sccm. It needs to know that, U.S. Pat. No. 5,348,589 utilizes the laser scribing technology to make the scribe lines. However, practical experiences further reveal that, the forgoing laser scribing is commonly carried out in air environment. It is worth noting that, oxygen and moisture existing in air environment may produce a considerable influence on the crystal structure of the perovskite active layer, thereby reducing the stability of the perovskite active layer. On the other hand, during the application of the laser scribing, removal of a portion of a specific material is achieved after the portion of the specific material absorbs a laser beam. However, in case of two materials having similar band gap being stacked to a stack structure, it is difficult to precisely control the laser beam to merely complete the removal of the top-layer material of the stack structure. In a common case, there are an incomplete scribing (removal) and a surface scribing (removal) respectively achieving on the top-layer material and the bottom-layer material of the stack structure. It needs to know that, the incomplete scribing (removal) of the top-layer material(s) is found to cause that the multi photoelectric conversion units are inadvertently short-circuited, thereby reducing the conversion efficiency of the photoelectric conversion device.

[0054] Accordingly, when executing the proposed method of the present invention, a laser scribing is firstly adopted for forming a plurality of transparent conductive films 10F on a transparent substrate 101. Subsequently, by using an identical first mask, a plurality of hole transport films 11, a plurality of active layers 12, and a plurality of electron transport films 13 are sequentially formed on the transparent conductive films 10F. It is worth to explaining that, during the whole manufacturing process, each of the solar cell units is prevented from receiving bad influences that are provided by laser scribing or manufacture environment, such that each of the solar cell units is guaranteed to exhibit outstanding photoelectric conversion efficiency.

[0055] FIG. 4 and FIG. 11 depict that the method flow is eventually proceeded to step S6: disposing a second mask over the plurality of electron transport films 13, and subsequently forming an electrical connection layer 14 on each of the plurality of electron transport films 13 through the second mask. For instance, thermal evaporation can be used for fabricating the electrical connection layers 14, wherein the electrical connection layer 14 13 is made of Au, Ag, or Al.

[0056] Through above descriptions, the method for manufacturing perovskite solar cell module that is disclosed by the present invention has been introduced completely and clearly; in summary, the present invention includes the advantages of: [0057] (1) Conventional technology commonly separates a perovskite solar cell module to a plurality of solar cell units through laser scribing or mechanical scribing. The conventional technology has been found to cause damages on the solar cell units that are separated from the perovskite solar cell module. The present invention discloses a method for manufacturing perovskite solar cell module. When executing this novel method, a laser scribing is firstly adopted for forming a plurality of transparent conductive films 10F on a transparent substrate 101. Subsequently, by using an identical first mask, a plurality of hole transport films 11, a plurality of active layers 12, and a plurality of electron transport films 13 are sequentially formed on the transparent substrate 101. Consequently, by the use of a second mask, each of the ETLs 13 is formed with an electrical connection layer 14 thereon, such that a perovskite solar cell module 1 comprising a plurality of solar cell units is hence completed on the transparent substrate 101. It is worth explaining that, during the whole manufacturing process, each of the solar cell units is prevented from receiving bad influences that are provided by laser scribing or manufacture environment, such that each of the solar cell units is able to exhibit outstanding photoelectric conversion efficiency.

[0058] The above description is made on embodiments of the present invention. However, the embodiments are not intended to limit scope of the present invention, and all equivalent implementations or alterations within the spirit of the present invention still fall within the scope of the present invention.