OPTOELECTRONIC COMPONENT AND METHOD FOR PRODUCING AN OPTOELECTRONIC COMPONENT

Abstract

The invention relates to an optoelectronic component including a semiconductor chip having a coupling-out facet that emits electromagnetic primary radiation during operation, a functional layer, wherein the coupling-out facet is at least partially covered by the functional layer, and the functional layer is a catalytic layer. The invention also relates to a method for producing an optoelectronic component.

Claims

1. An optoelectronic component with a semiconductor chip, comprising, a coupling-out facet which emits electromagnetic primary radiation during operation, a functional layer, wherein the coupling-out facet is covered by the functional layer at least in places, the functional layer is a catalytic layer, and the functional layer comprises a material selected from the following group: platinum, vanadium, molybdenum, titanium, tungsten, tantalum, palladium, FeN.sub.4 complexes.

2. The optoelectronic component according to claim 1, wherein the functional layer is configured to shift a reaction equilibrium from volatile molecules to solid compounds to the side of the volatile molecules.

3. The optoelectronic component according to claim 1, wherein the volatile molecules are gaseous.

4. The optoelectronic component according to claim 1, wherein the functional layer comprises a polyoxometalate or consists of a polyoxometalate.

5. The optoelectronic component according to claim 1, wherein the functional layer comprises a metal compound or consists of a metal compound.

6. (canceled)

7. The optoelectronic component according to claim 1, wherein the coupling-out facet is completely covered by the functional layer.

8. The optoelectronic component according to claim 1, wherein the semiconductor chip comprises an active region and a waveguide and at least the active region and/or the waveguide at the coupling-out facet is completely covered by the functional layer.

9. The optoelectronic component according to claim 1, wherein the functional layer is in direct contact with the coupling-out facet.

10. The optoelectronic component according to claim 1, wherein the functional layer comprises a thickness of at most 5000 nanometers.

11. The optoelectronic component according to claim 1, wherein the functional layer is formed as a monolayer.

12. The optoelectronic component according to claim 1, wherein the optoelectronic component is an edge-emitting semiconductor laser component.

13. The optoelectronic component according to claim 1, wherein the optoelectronic component is a surface emitter.

14. The optoelectronic component according to claim 1, wherein the optoelectronic component is a superluminescent diode.

15. The optoelectronic component according to claim 1, wherein the semiconductor chip emits electromagnetic radiation of a wavelength range of less than 500 nanometers during operation.

16. The optoelectronic component according to claim 1, wherein the optoelectronic component is free of a hermetic housing.

17. A method for producing an optoelectronic component according to claim 1, the method comprising providing the semiconductor chip applying the functional layer at least in places to the coupling-out facet.

18. The method of producing an optoelectronic component according to claim 17, wherein the functional layer is vapor deposited or sputtered onto the coupling-out facet or is deposited via a chemical vapor deposition, a plasma-enhanced chemical vapor deposition, or a SAM method.

Description

BRIEF DESCRIPTION OF THE DRAWING

[0066] Further advantageous embodiments and further developments of the optoelectronic component and of the method for producing an optoelectronic component result from the exemplary embodiments described below in conjunction with the figures.

[0067] It shows:

[0068] FIG. 1 a scanning electron microscope view of an optoelectronic component,

[0069] FIGS. 2 and 5 schematic sectional views of an optoelectronic component according to an exemplary embodiment, respectively,

[0070] FIGS. 3, 4, 6, and 7 side views of an optoelectronic component according to an exemplary embodiment, respectively,

[0071] FIGS. 8 and 9 each a chemical equilibrium reaction, and

[0072] FIG. 10 schematic sectional views of various steps of a method for producing an optoelectronic component according to an exemplary embodiment.

DETAILED DESCRIPTION

[0073] Elements that are identical, similar or have the same effect are marked with the same reference signs in the figures. The figures and the proportions of the elements shown in the figures are not to be regarded as true to scale. Rather, individual elements, in particular layer thicknesses, may be shown exaggeratedly large for better representability and/or understanding.

[0074] In FIG. 1 a scanning electron microscope image of a comparative optoelectronic component is described. The optoelectronic component comprises a step 5 and a semiconductor chip 2 arranged thereon. The semiconductor chip 2 comprises a coupling-out facet 3 which is oriented perpendicular to a main extension plane of the active region and emits electromagnetic primary radiation during operation. It can be seen that a solid compound OR is deposited on the coupling-out facet. The solid compound OR is, for example, elemental carbon or silicon dioxide. The solid compound OR leads to overheating of the optoelectronic component.

[0075] The optoelectronic component 1 according to the exemplary embodiment of FIG. 2 comprises a semiconductor chip 2, comprising a coupling-out facet 3, through which electromagnetic primary radiation is emitted during operation, and a functional layer 4. During operation, the semiconductor chip 2 emits electromagnetic primary radiation of a wavelength range of less than 500 nanometers. Preferably, the wavelength range is smaller than 480 nanometers. In particular, the semiconductor chip 2 emits electromagnetic primary radiation with a peak wavelength of less than 480 nanometers during operation.

[0076] The functional layer 4 covers the coupling-out facet 3 at least in places. The functional layer 4 is a catalytic layer.

[0077] The semiconductor chip 2 is arranged on a step 5. The step 5 is a so-called submount. The step 5 is in turn arranged on a carrier 6. The semiconductor chip 2 and the step 5 as well as the functional layer 4 are surrounded by a housing 8.

[0078] The housing 8 comprises a vent opening 9. The electromagnetic primary radiation emitted from the semiconductor chip 2 strikes an optical element 7 and is deflected thereby. The optical element 7 is configured to shape the emitted electromagnetic primary radiation. The optical element 7 and the vent opening 9 are optionally provided in the optoelectronic component 1.

[0079] The functional layer 4 is configured to shift a reaction equilibrium from volatile molecules to solid compounds to the side of volatile molecules. For example, the functional layer 4 is a polyoxometalate. Additionally or alternatively, a metal compound, for example TiO.sub.2, ZrO.sub.2, HfO.sub.2 or SiO.sub.2, can be introduced into the functional layer 4. The coupling-out facet 3 is completely covered by the functional layer 4. The functional layer 4 is in direct contact with the coupling-out facet 3. The functional layer 4 comprises a thickness D of at most 500 nanometers.

[0080] The optoelectronic component 1 is an edge-emitting semiconductor laser component 13, that is, the coupling-out facet 3 is located at one end face.

[0081] The side view shown in FIG. 3 shows a section in the X direction of an optoelectronic component 1. Here, the optoelectronic component 1 is arranged on a step 5. The step 5 is a so-called submount. The edge-emitting semiconductor laser component 13 comprises a p-down configuration.

[0082] A functional layer 4 is arranged on the coupling-out facet 3 of the semiconductor chip 2. The functional layer 4 is arranged on a subregion 12 of the coupling-out facet 3 and comprises a round shape.

[0083] The semiconductor chip 2 comprises an active region 11 and a waveguide 10. At least the active region 11 and the waveguide 10 are completely covered by the functional layer 4 at the coupling-out facet 3. The functional layer 4 is also here in direct contact with the coupling-out facet 3 and comprises a polyoxometalate. Alternatively, the functional layer 4 may be selected from the group including platinum, vanadium, molybdenum, titanium, tungsten, tantalum, palladium and FeN.sub.4 complexes. The functional layer 4 may be formed as a film. The functional layer 4 is formed as a monolayer.

[0084] The exemplary embodiment shown in FIG. 4 shows an optoelectronic component 1 on a step 5. The optoelectronic component 1 comprises a semiconductor chip 2, a coupling-out facet 3 and a functional layer 4 arranged on the coupling-out facet 3. The functional layer 4 is in direct contact with the coupling-out facet 3 and completely covers the coupling-out facet 3. The optoelectronic component 1 is thereby free of a hermetic housing.

[0085] The exemplary embodiment shown in FIG. 5 differs from the exemplary embodiment shown in FIG. 2 in that the semiconductor chip 2 is arranged directly on a carrier 6. In addition, the optoelectronic component 1 can be operated without an optical element 7 and a vent opening 9.

[0086] In FIG. 6 a side view of an edge-emitting semiconductor laser component according to an exemplary embodiment is shown. Here, too, a p-up configuration of the semiconductor chip 2 is shown in comparison with FIG. 3. The semiconductor chip 2 is arranged directly on the carrier 6. FIG. 7 shows a surface emitter 15 according to an exemplary embodiment. The surface emitter 15 is a VCSEL (vertical-cavity surface-emitting laser). The surface emitter is a laser diode in which the electromagnetic primary radiation is emitted perpendicular to the plane of the semiconductor chip 2. This means that the coupling-out facet 3 is parallel to the plane of the semiconductor chip 2. The functional layer 4 is arranged on the coupling-out facet 3. The semiconductor chip 2 is arranged on the carrier 6. Optionally, the semiconductor chip 2 can be arranged on the step 5.

[0087] The reaction equation shown in FIG. 8 indicates an equilibrium between volatile molecules OM and solid compounds OR. A reaction, initiated by the electromagnetic primary radiation of the semiconductor chip 2, takes place. The volatile molecules OM C.sub.nH.sub.n+2R+N.sub.2+O.sub.2+H.sub.2O react to form elemental C, CO.sub.x, NO.sub.y, NH.sub.z and C.sub.mH.sub.m+2R.

[0088] n, x, y, z and m are natural numbers between 1 and 20 inclusive.

[0089] Due to the functional layer 4 the equilibrium of the reaction can be shifted towards the volatile molecules OM at the coupling-out facet 3. The solid compounds OR react to form the gaseous, highly volatile molecules OM. With advantage, this prevents molecules, for example carbon compounds, from reacting on the coupling-out facet 3 to form non-volatile, solid compounds OR, settling there and thus leading to overheating of the optoelectronic component 1 and damaging the optoelectronic component 1 as a result.

[0090] In FIG. 9 a reaction equilibrium between volatile molecules OM and solid compounds OR is shown. Here, too, the equilibrium is shifted to the side of the volatile compounds OM by the functional layer. Thus, among other things it is prevented that the solid compound OR SiO.sub.2 and C are settled on the coupling-out facet. R here stands for an organic residue, for example a residue containing carbon and optionally functional groups. X is a natural number between 1 and 3 inclusive.

[0091] The reaction equations of FIGS. 8 and 9 are not balanced.

[0092] In FIG. 10 a method for producing an optoelectronic component 1 according to an exemplary embodiment is described. First, the semiconductor chip 2 is provided. Then, the functional layer 4 is applied to the coupling-out facet 3 at least in places. The functional layer 4 may be vapor deposited or sputtered onto the coupling-out facet 3, or may be deposited via a chemical vapor deposition method, a plasma-assisted chemical vapor deposition method, or a SAM method. Hereby, the functional layer 4 is applied directly to the coupling-out facet 3.

[0093] The features and exemplary embodiments described in connection with the figures can be combined with each other according to further exemplary embodiments, even if not all combinations are explicitly described. Furthermore, the exemplary embodiments described in connection with the figures may alternatively or additionally comprise further features according to the description in the general part.

[0094] This patent application claims priority to German patent application 102020127450.5, the disclosure content of which is hereby incorporated by reference.

[0095] The invention is not limited to the exemplary embodiments by the description thereof. Rather, the invention encompasses any new feature as well as any combination of features, which in particular includes any combination of features in the patent claims, even if that feature or combination itself is not explicitly stated in the patent claims or exemplary embodiments.