Tris(trichlorosily1)dichlorogallylgermane, process for the preparation thereof and use thereof

Abstract

A process can be used for the preparation of tris(trichlorosilyl)dichlorogallylgermane, which is a chlorinated, uncharged substance.

Claims

1. Tris(trichlorosilyl)dichlorogallylgermane of the formula (I): ##STR00003##

2. A process for preparing the tris(trichlorosilyl)dichlorogallylgermane according to claim 1, the process comprising: (a) mixing at least one tris(trichlorosilyl)germanide salt of an [X][Ge(SiCl.sub.3).sub.3] type, wherein X=ammonium (R.sub.4N) and/or phosphonium (R.sub.4P), and wherein R=an alkylic or aromatic radical, with GaCl.sub.3, to obtain a mixture, and (b) reacting the mixture in an environment consisting of at least one chlorinated hydrocarbon at a temperature of 5 to 40 C., to obtain a crude product comprising salts [R.sub.4N][GaCl.sub.4] and/or [R.sub.4P][GaCl.sub.4] and tris(trichlorosilyl)dichlorogallylgermane, and subsequently (c) introducing said crude product into at least one nonpolar solvent and separating off the insoluble residue, and subsequently (d) removing the at least one nonpolar solvent, to obtain tris(trichlorosilyl)dichlorogallylgermane.

3. The process according to claim 2, wherein in (b), the reaction is conducted at room temperature, and/or wherein in (d), the at least one nonpolar solvent is removed at room temperature.

4. The process according to claim 2, wherein in (b), the at least one chlorinated hydrocarbon is dichloromethane (CH.sub.2Cl.sub.2).

5. The process according to claim 2, wherein in (b), R=Et.

6. The process according to claim 2, wherein in (c), the at least one nonpolar solvent is selected from the group consisting of hexane, n-hexane, pentane, and benzene.

7. The process according to claim 2, wherein in (a), [X] [Ge(SiCl.sub.3).sub.3] and GaCl.sub.3 are mixed by stirring, in (b), the mixture obtained in (a) is completely dissolved in the at least one chlorinated hydrocarbon, and after a time of 0.1 to 24 hours, the at least one chlorinated hydrocarbon is removed.

8. The process according to claim 2, wherein in (c), after the introduction of the crude product, the temperature of the at least one nonpolar solvent is brought from room temperature to an elevated temperature and is subsequently allowed to cool, for a total from 1 to 5 times.

9. A method of deposition of gallium-doped SiGe layers, the method comprising: reacting the tris(trichlorosilyl)dichlorogallylgermane according to claim 1 as a precursor, to deposit the gallium-doped SiGe layers.

10. The process according to claim 6, wherein the at least one nonpolar solvent is n-hexane.

11. The process according to claim 7, wherein [X][Ge(SiCl.sub.3).sub.3] and GaCl.sub.3 are in a solid state.

12. The process according to claim 7, wherein the mixing in (a) is performed in an oxygen-free environment.

13. The process according to claim 7, wherein the mixing in (a) is performed under protective gas.

14. The process according to claim 7, wherein in (b), the at least one chlorinated hydrocarbon is removed after 1 to 5 hours.

15. The process according to claim 7, wherein in (b), the at least one chlorinated hydrocarbon is removed at room temperature.

16. The process according to claim 7, wherein in (b), the at least one chlorinated hydrocarbon is removed in an oxygen-free, dry environment.

17. The process according to claim 7, wherein in (b), the at least one chlorinated hydrocarbon is removed at a pressure in a range from 1 to 500 hPa.

18. The process according to claim 8, wherein the nonpolar solvent is brought from room temperature to an elevated temperature, for a total of 3 times.

19. The process according to claim 8, wherein the elevated temperature is the boiling point temperature of the at least one nonpolar solvent.

20. The process according to claim 8, wherein the cooling of the at least one nonpolar solvent is to room temperature.

Description

BRIEF DESCRIPTION OF THE DRAWINGS

(1) FIG. 1A shows the .sup.29Si NMR spectrum of Ge(SiCl.sub.3).sub.3GaCl.sub.2.

(2) FIG. 1B shows the crystal structure of Ge(SiCl.sub.3).sub.3GaCl.sub.2.

DETAILED DESCRIPTION OF THE INVENTION

(3) The process has the advantage that neither pyrophoric nor toxic substances such as, for example, SiH.sub.4, GeH.sub.4 or sodium need to be used. It is true that processes are already known in the prior art that avoid the use of such hazardous substances. However, these conventional processes generally yield neutral SiGe compounds with organic radicals. Organic radicals prevent the use of the SiGe compounds in those deposition reactions that are of interest for semiconductor electronics, because SiC is formed at the temperatures that are set during the deposition. SiC is nonconductive and destroys the desired conductive or semiconductive property of SiGe layers.

(4) Nor can salt-type SiGe compounds be used in semiconductor electronics, since organic radicals are present in such substances.

(5) In contrast, in the process according to the invention neither a salt-type SiGe compound is produced, nor are organic radicals present. Instead, in the claimed process, an already existing SiGe compound is doped with gallium in a single step, and in the process a salt-type starting material is converted into an uncharged, non-ionic product. An additional, immensely important advantage that emerges is thus that the tris(trichlorosily)dichlorogallylgermane according to the invention or obtained according to the invention can be used without problems in semiconductor electronics.

(6) The invention therefore likewise provides for the use or the tris(trichlorosilyl)dichlorogallylgermane according to the invention or of the tris(trichlorosilyl)dichlorogallylgermane prepared by the process according to the invention as precursor for the deposition of gallium-doped SiGe layers.

(7) The invention is explained in more detail hereafter.

(8) In step a of the process according to the invention, 2 equivalents of GaCl.sub.3 can preferably be used per equivalent of tris(trichlorosilyl)germanide salt of the [X][Ge(SiCl.sub.3).sub.3] type, where X=ammonium (R.sub.4N) and/or phosphonium (R.sub.4P).

(9) In the reaction that takes place in step b of the process according to the invention, a GaCl.sub.2 group adds onto the central germanium atom, and the chlorinated, uncharged compound Ge(SiCl.sub.3).sub.3GaCl.sub.2 forms in the crude product.

(10) The ammonium or phosphonium chloride salts form salts with GaCl.sub.3 of the [R.sub.4N][GaCl.sub.4] or [R.sub.4P][GaCl.sub.4] type that are likewise present in the crude product. The uncharged molecule of the formula (I) is separated off from these salt-type compounds by extraction with nonpolar solvents and obtained in pure form. Suitable nonpolar solvents are advantageously pentane, hexane and/or benzene. Particularly preferably, n-hexane can be used.

(11) The reaction in step b of the process according to the invention can advantageously be conducted at room temperature. In addition or as an alternative to this option, in step d the nonpolar solvent can be removed at room temperature.

(12) It may additionally be advantageous when, in step b of the process according to the invention, the chlorinated hydrocarbon used is dichloromethane CH.sub.2Cl.sub.2.

(13) One further option consists in choosing R=Et in step b of the process according to the invention.

(14) Preferably, in step c of the process according to the invention, the nonpolar solvent can be selected from hexane, n-hexane, pentane and/or benzene. Particularly preferably, n-hexane can be used in step c.

(15) A further-preferred embodiment of the process according to the invention consists, in step a, in [X][Ge(SiCl.sub.3).sub.3] and GaCl.sub.3, these components preferably being in the solid state, being mixed by means of stirring, preferably mixed in an oxygen-free environment, particularly preferably under protective gas, nitrogen or argon, and, in step b, the mixture obtained in step a is completely dissolved in the chlorinated hydrocarbon(s), and, after a time of 0.1 to 24 hours, preferably after 1 to 5 hours, the chlorinated hydrocarbon(s) are removed, preferably at a temperature of 5 to 40 C., particularly preferably at room temperature, additionally preferably in an oxygen-free, dry environment, particularly preferably in an isolated environment, additionally preferably under standard pressure or reduced pressure, particularly preferably in the range from 1 to 500 hPa.

(16) It may additionally be advantageous when, in step c of the process according to the invention, after the introduction of the crude product, the temperature of the nonpolar solvent(s) is brought for from 1 to 5 times, preferably 3 times, from RT to elevated temperature, preferably to the boiling point at least of one nonpolar solvent, and subsequently allowed to cool, preferably to RT.

(17) The example which follows provides additional explanation of the present invention without restricting the subject-matter. The term room temperature is abbreviated to RT.

(18) Example 1 describes the reaction of [Et.sub.4N][Ge(SiCl.sub.3).sub.3] with GaCl.sub.3. The reaction of other ammonium or phosphonium (trichlorosilyl)germanide salts of the [R.sub.4N][Ge(SiCl.sub.3).sub.3] or [R.sub.4P][Ge(SiCl.sub.3).sub.3] type can be conducted analogously.

(19) Analytical Methods for Determination of the Crystal Structure

(20) The data for all structures were collected at 173 K using a STOE IPDS II two-circle diffractometer with a Genix microfocus tube having mirror optics using MoK.sub. radiation (=0.71073 ) and scaled using the frame scaling procedure of the X-AREA program (Sloe & Cie, 2002). The structures were solved by direct methods with the aid of the SHELXS program (Sheldrick, 2008) and refined on F.sup.2 by the full matrix least squares technique. Cell parameters were determined by refinement on values of the reflections with I>6(I).

Example 1: Preparation of Tris(Trichlorosilyl)Dichlorogallylgermane (1)

(21) The synthesis was effected in accordance with Equation 1 from [Et.sub.4N][Ge(SiCl.sub.3).sub.3] with GaCl.sub.3 while adding CH.sub.2Cl.sub.2.

(22) ##STR00002##

(23) The reaction was conducted in a glovebox.

(24) [Et.sub.4N][Ge(SiCl.sub.3).sub.3] at an amount of 0.050 g, corresponding to 0.082 mmol, and GaCl.sub.3 at an amount of 0.028 g, corresponding to 0.16 mmol, were mixed in the solid state and subsequently completely dissolved in dichloromethane CH.sub.2Cl.sub.2.

(25) The dichloromethane was slowly evaporated at RT after 3 hours. After one day, a mixture of Ge(SiCl.sub.3).sub.3GaCl.sub.2 (1) and [Et.sub.4N][GaCl.sub.4] had formed as crystalline crude product. The crude product was heated to boiling three times with in each case 7 ml of n-hexane. Subsequently, the clear, colourless n-hexane solution was separated off from the insoluble residue with a syringe.

(26) The nonpolar solvent was subsequently removed slowly at RT, and after one day it was possible to isolate Ge(SiCl.sub.3).sub.3GaCl.sub.2 (1) as a crystalline substance.

(27) The .sup.29Si NMR spectrum of the inventive product 1 is presented in FIG. 1A, and the result of the analysis thereof by means of X-ray diffractometry is presented in FIG. 1B.

(28) The data of the .sup.29Si NMR spectroscopy analysis:

(29) .sup.29Si NMR (99.4 MHz, CD.sub.2Cl.sub.2, 298 K): =7.2 ppm.