METHOD FOR MANUFACTURING AN ETCH STOP LAYER AND MEMS SENSOR COMPRISING AN ETCH STOP LAYER

Abstract

The disclosure relates to a method for manufacturing a planarized etch-stop layer, ESL, for a hydrofluoric acid, HF, vapor phase etching process. The method includes providing a first planarized layer on top of a surface of a substrate, the first planarized layer having a patterned and structured metallic material and a filling material. The method further includes comprises depositing on top of the first planarized layer the planarized ESL of an ESL material with low HF etch rate, wherein the planarized ESL has a low surface roughness and a thickness of less than 150 nm, in particular of less than 100 nm.

Claims

1. A method for manufacturing a planarized etch-stop layer, ESL, suitable for a hydrofluoric acid, HF, vapor phase etching process, the method comprising providing a first planarized layer on top of a surface of a substrate, the first planarized layer comprising a patterned and structured metallic material and a filling material; and depositing on top of the first planarized layer a planarized ESL of an ESL material with low HF etch rate; wherein the planarized ESL has a thickness of less than 150 nm, in particular of less than 100 nm.

2. The method according to claim 1, wherein planarization of the first planarized layer is realized by performing one of the following: chemical-mechanical planarization, lift-off processing, non-selective plasma etching.

3. The method according to claim 1, wherein the method is part of a CMOS-compatible fabrication process.

4. The method according to claim 1, wherein the method is suitable for manufacturing a MEMS device, in particular a capacitive MEMS sensor device.

5. The method according to claim 1, wherein the ESL material is a semiconductor, such as silicon carbide, or a dielectric, such as silicon nitride, in particular silicon-rich silicon nitride.

6. The method according to claim 1, wherein the first planarized layer on the substrate is provided by depositing a first material on top of the surface of the substrate; patterning and structuring the first material; depositing a second material on top of the first material, in particular the structured first material, and exposed parts of the surface of the substrate; and performing chemical-mechanical planarization, CMP.

7. The method according to claim 6, wherein a CMP ESL material is arranged between the first material and the second material, in particular between the structured first material and the second material, with the CMP ESL material having a low CMP etch rate.

8. The method according to claim 7, wherein the CMP ESL material is the same as the ESL material.

9. The method according to claim 1, wherein the first planarized layer on the substrate is provided by depositing a first material on top of a surface of the substrate; depositing a sacrificial material on top of the first material; patterning and structuring the first material and the sacrificial material; depositing a second material on top of the structured sacrificial material and exposed parts of the surface of the substrate; and performing wet-etching of the sacrificial material.

10. The method according to claim 9, wherein sidewalls of the structured sacrificial material are tapered.

11. The method according to claim 6, wherein the first material is the metallic material and the second material is the filling material; or the first material is the filling material and the second material is the metallic material.

12. The method according to claim 1, wherein the first planarized layer on the substrate is provided by depositing, patterning and structuring the metallic material on top of the surface of the substrate; depositing the filling material on top of the structured metallic material and exposed parts of the surface of the substrate; depositing a planarized layer of an additional material on top of the filling material; and performing a process of non-selective plasma etching; wherein the additional material has a similar etch rate as the filling material concerning a non-selective plasma etch.

13. The method according to claim 1, wherein the method further comprises depositing a planarized sacrificial layer of a further material onto the planarized ESL, wherein the further material has a high HF etch selectivity over the ESL material.

14. The method according to claim 13, wherein the further material is a dielectric, in particular silicon dioxide.

15. The method according to claim 13, wherein the method further comprises forming a trench in the sacrificial layer; filling the trench with a conductive anchor material, in particular a metal; depositing, patterning and structuring a second metallic material on top of the sacrificial layer; removing the sacrificial layer; and depositing a seal layer on top of the second metallic material and the planarized ESL.

16. A capacitive MEMS sensor comprising a substrate, in particular a CMOS substrate; a first planarized layer arranged on a surface of the substrate, the first planarized layer comprising a structured metallic material; and a filling material in voids of the structured metallic material; on top of the first planarized layer a planarized etch stop layer, ESL, of an ESL material with low HF etch rate, wherein the ESL has a thickness of less than 150 nm, in particular less than 100 nm; and a suspended layer of a structured second metallic material above the ESL.

17. The capacitive MEMS sensor according to claim 16, further comprising a seal layer on top of the suspended layer and the planarized ESL.

Description

BRIEF DESCRIPTION OF THE DRAWINGS

[0038] The following description of figures of exemplary embodiments may further illustrate and explain aspects of the improved concept. Elements of the manufacturing method with the same structure and the same effect, respectively, appear with equivalent reference symbols. Insofar as elements of the method correspond to one another in terms of their function in different figures, the description thereof is not repeated for each of the following figures.

[0039] FIGS. 1A to 1C show an exemplary embodiment of the method according to the improved concept;

[0040] FIGS. 2A to 2C show a variation of the exemplary embodiment shown in FIGS. 1A to 1C;

[0041] FIGS. 3A to 3D show a further exemplary embodiment of the method according to the improved concept;

[0042] FIGS. 4A to 4C show a further exemplary embodiment of the method according to the improved concept;

[0043] FIGS. 5A to 5C show a variation of the exemplary embodiment shown in FIGS. 4A to 4C; and

[0044] FIGS. 6A to 6D show a further exemplary embodiment of the method according to the improved concept;

[0045] FIGS. 7A to 7D show an exemplary embodiment of the method according to the improved concept finalizing the manufacturing of the sensor.

DETAILED DESCRIPTION

[0046] FIGS. 1A to 1C show an exemplary embodiment of the method to form a planarized etch-stop layer, ESL, for a hydrofluoric acid, HF, vapor phase etching process. In this exemplary embodiment, the planarization of the first layer is realized by chemical-mechanical planarization, CMP, for instance. The embodiment employs an additional ESL for CMP process.

[0047] As shown in FIG. 1A, the additional ESL is made of a CMP ESL material 21, which is deposited on top of exposed parts of a top surface of a substrate, not shown, and a structured first material. In this embodiment, the first material is a metallic material 20 which forms bottom electrodes. The CMP ESL material 21 may for example be SiN, in particular silicon-rich SiN and has a low etch rate regarding CMP etching. The metallic material 20 may for example be composed of Ti, TiN, AlCu and/or TiTiN. As a second material, a filling material 22 is deposited on top of the CMP ESL material 21, in particular to fill gaps in the layer comprising the metallic material 20. The filling material 22 may be a dielectric material, for example SiO2.

[0048] FIG. 1B shows a first planarized layer after performing CMP, which was suspended with reaching the additional ESL made off the CMP ESL material 21. As CMP aims at planarizing the surface it is applied to, a topography of the structure, in particular after deposition of the filling material 22 is not critical.

[0049] FIG. 1C shows the application of the ESL material 23 forming the intended planarized ESL on top of the planarized first layer. The ESL material 23 may be SiN, in particular silicon-rich SiN, which has a low etch rate regarding HF etchants. For some CMP processes, the employment of an additional ESL for the CMP may be optional.

[0050] FIGS. 2A to 2C show a variation of the embodiment described in FIGS. 1A to 1C. In this variation, the CMP ESL material 21 is patterned and structured together with the metallic material 20 before depositing the filling material 22.

[0051] In particular, the CMP ESL material 21 may act as a mask, hence eliminating the necessity for a resist, for instance, to pattern and structure the metallic material 20 before applying the CMP ESL material 21, as shown in FIGS. 1A to 1C.

[0052] The CMP process also in this variation suspends with reaching the CMP ESL material 21 and therefore forms the first planarized layer, as shown in FIG. 2B.

[0053] FIG. 2C consequently shows the deposition of the ESL material 23 for the formation of the planarized ESL.

[0054] FIGS. 3A to 3D illustrate a variation of the process as an alternative embodiment of the method according to the improved concept. Compared to the embodiments described in FIGS. 1A to 1C and FIGS. 2A to 2C, the first material and the second material are exchanged.

[0055] For this embodiment, the filling material 22 is deposited as the first material on a surface of the substrate and subsequently patterned and structured, as shown in FIG. 3A.

[0056] FIG. 3B shows the deposition of the metallic material 20 as the second material, defining bottom electrodes in the layer of the filling material 22.

[0057] The filling material 22 can in this case be chosen to have a low etch rate regarding CMP, such that the planarization of the first layer suspends with reaching the filling material 22, as illustrated in FIG. 3C.

[0058] FIG. 3D shows the structure after depositing the ESL material 23 to form the planarized ESL.

[0059] FIGS. 4A to 4C show an alternative embodiment of the method to form the planarized ESL on top of the planarized first layer.

[0060] In this embodiment, the metallic material 20 is patterned and structured as the first material together with a sacrificial material 25, as shown in FIG. 4A. The sacrificial material 25 may for example be a resist material that is not removed after structuring the metallic material 20. The patterning and structuring of the metallic material 20 and the sacrificial material 25 for example is realized via a tapered plasma process, in particular to achieve tapered sidewalls 26 of the sacrificial material 25.

[0061] FIG. 4B shows the deposition of the filling material 22 as the second material, which can be well-controlled in particular for filling gaps in the first layer comprising the metallic material 20, such that a thickness of the filling material 22 corresponds to the thickness of the metallic material 20.

[0062] FIG. 4C shows the result after removal of the sacrificial material 25 through a lift-off process, for instance, forming the planarized first layer as basis for the planarized ESL of the ESL material 23 on top of the first layer.

[0063] FIGS. 5A to 5C show a reversed process as alternative embodiment of the method shown in FIGS. 4A to 4C, in which the first material and the second material are exchanged.

[0064] The principle of this embodiment is analogous to the process shown in FIGS. 3A to 3D, wherein in a first step the filling material 22 is patterned and structured as the first material together with a sacrificial material 25 on top of the filling material 22, as shown in FIG. 5A. Likewise in this embodiment, the sacrificial material 25 may for example be a resist material that is not removed after structuring the filling material 22.

[0065] FIG. 5B shows the structure after deposition of the metallic material 20 as the second material in particular on exposed parts of the surface of the substrate, such that the thickness of the metallic material 20 corresponds to the thickness of the filling material 22.

[0066] FIG. 5C shows the result after removal of the sacrificial material 25 through a lift-off process, for instance, forming the planarized first layer as basis for the planarized ESL of the ESL material 23 on top of the first layer.

[0067] FIGS. 6A to 6D show a further alternative embodiment of the method to form the planarized ESL on top of the planarized first layer. Analogous to the process described in FIGS. 1A and 2A, the filling material 22 in this embodiment is deposited on the structured metallic material 20 and exposed parts of the surface of the substrate, in particular to fill gaps in the layer comprising the metallic material 20, as shown in FIG. 6A.

[0068] Following this, FIG. 6B shows the deposition of an additional material 24 on top of the filling material 22 such that the top surface of the additional material 24 is planar. For example, the additional material may be a resist which is applied with a planar top surface via spin-coating, for instance.

[0069] FIG. 6C shows the planarized first layer after non-selective plasma etching. This etching intends to etch the filling material 22 as well as the additional material 24 with similar, in particular equal, rates in order to achieve a planarized surface of the first layer. The plasma etch can be well-controlled such that an overetch is prevented.

[0070] FIG. 6D again shows the structure after depositing the ESL material 23 to form the planarized ESL on top of the planarized first layer.

[0071] FIGS. 7A to 7D show exemplary steps after forming the planarized ESL for fabricating a MEMS sensor comprising a planarized ESL.

[0072] Starting point is FIG. 7A, which shows the planarized ESL 13 of the ESL material 23 on top of the planarized first layer comprising bottom electrodes 11 of the metallic material 20 and filling material 22 in gaps between the bottom electrodes 11. The first layer is arranged on top of a surface of a substrate 10, for example a CMOS substrate with vias in the passivation for electrical connections.

[0073] FIG. 7B shows the structure after deposition of a planarized sacrificial layer 16 of a further material. The further material has a high etch rate compared to the ESL material 23 regarding an HF vapor phase etchant. For instance, the further material may be the same as the filling material 22, in particular SiO2. SiO2 is characterized by a high selectivity over SiN regarding a HF etchant. SiN, in particular silicon-rich SiN, is a suitable ESL material 23.

[0074] FIG. 7C shows a trench 14 inside the sacrificial layer 16. This trench is filled with a conductive anchor material, for example a metallic material, before a planarized metallic layer 12 of a second metallic material is deposited on top of the sacrificial layer 16.

[0075] After patterning and structuring the planarized metallic layer 12 to form the top electrodes 15, the sacrificial layer 16 is removed through a HF vapor phase etching process that suspends the top electrodes 15, now forming a suspended membrane, as shown in FIG. 7D. The planarized ESL 13 acts as a barrier for the HF etch and hence stops the etching process without influencing the subjacent bottom electrodes 11, filling material 22 and the substrate 10. On top of the top electrodes 15 and the planarized ESL 13, a seal layer 26 is deposited to protect the top electrodes 15 and serve as final passivation.

[0076] The exemplary capacitive sensor 1 fabricated following this embodiment of the method according to the improved concept is a specific example and may for example be a pressure sensor. The method can be applied to similar sensor manufacturing processes, in which a planar and thin ESL is desired. This is particularly the case if the ESL remains on the finished sensor and a significant decrease of, for example, electrical properties is to be prevented.