Carrier ring, grinding device, and grinding method

Abstract

A double-head grinding machine includes a disc-shaped carrier ring having a support hole for supporting a silicon wafer, a rotation mechanism rotating the carrier ring around a center of the carrier ring, and a grinding wheel including a grinding stone for grinding the silicon wafer. The support hole is circular and has a center eccentric to the center of the carrier ring.

Claims

1. A grinding machine configured to grind a workpiece with a circular contour and having two opposing surfaces, the grinding machine comprising: a disc-shaped carrier ring provided with a support hole for supporting the workpiece such that the two opposing surfaces are exposed for grinding; a rotation mechanism configured to rotate the carrier ring around a center of the carrier ring; two grinding wheels such that one grinding wheel is disposed facing one surface of the workpiece and the other grinding wheel is disposed facing the other surface of the workpiece; each of the two grinding wheels comprising a disc-shaped wheel base and a plurality of grinding stones for grinding the workpiece, wherein the support hole provided in a circular shape has a center eccentric to the center of the carrier ring, an eccentricity of the center of the support hole to the center of the carrier ring is greater than 0.0% and at most 1.7% of a diameter of the workpiece, a diameter of each of the wheel bases is smaller than a diameter of the support hole, and the plurality of grinding stones are arranged on a surface of each of the wheel bases along an outer edge at regular intervals.

2. A grinding method for grinding a workpiece with a circular contour, the method comprising: supporting the workpiece in a circular-shaped support hole provided to a disc-shaped carrier ring such that a center of the workpiece is eccentric to a center of the carrier ring; rotating the carrier ring around the center of the carrier ring; and grinding the workpiece by pressing two grinding wheels against both surfaces of the workpiece while rotating the grinding wheels, the grinding wheels facing the respective surfaces of the workpiece held by the carrier ring, wherein an eccentricity of the center of the support hole to the center of the carrier ring is greater than 0.0% and at most 1.7% of a diameter of the workpiece, the grinding wheels each comprise a disc-shaped wheel base and a plurality of grinding stones arranged on a surface of each of the wheel bases along an outer edge at regular intervals, and a diameter of each wheel base is smaller than a diameter of the support hole.

Description

BRIEF DESCRIPTION OF DRAWING(S)

(1) FIG. 1 is a sectional view showing a relevant part of a double-head grinding machine according to an exemplary embodiment of the invention.

(2) FIG. 2 is a front view showing a carrier ring according to the exemplary embodiment, which is related to Examples 1 and 2 of the invention.

(3) FIG. 3 is a front view showing a carrier ring related to Comparative of the invention.

(4) FIG. 4 is a graph showing a sectional profile of a ground silicon wafer related to each of Examples 1 and 2 and Comparative of the invention.

DESCRIPTION OF EMBODIMENT(S)

(5) An exemplary embodiment of the invention will be described below with reference to the attached drawings.

(6) Arrangement of Double-Head Grinding Machine

(7) As shown in FIG. 1, a double-head grinding machine 1 (grinding machine) includes a disc-shaped carrier ring 2 configured to hold a silicon wafer W (workpiece) therein, a rotation mechanism 3 configured to rotate the carrier ring 2 around a center C1 of the carrier ring 2 (i.e., rotation axis), and two grinding wheels 4 facing both surfaces of the silicon wafer W held by the carrier ring 2 and each including a plurality of grinding stones 42 for grinding the silicon wafer W.

(8) As also shown in FIG. 2, the carrier ring 2 includes a rotary ring 21 in the form of an annular plate, and a support ring 24 in the form of an annular plate and having an outer periphery held by the rotary ring 21.

(9) The rotary ring 21 includes a ring body 22 and a retaining ring 23, each of which is made of a material such as stainless steel (SUS). A fitting groove 221 is provided to an inner edge on a side of the ring body 22 to receive the outer periphery of the support ring 24 and the retaining ring 23. An inner circumferential surface of the retaining ring 23 is provided with an internal gear 231 designed to mesh with a later-described drive gear 31 of the rotation mechanism 3.

(10) The support ring 24 is made of, for instance, glass epoxy resin and thinner than the silicon wafer W. The support ring 24 has a support hole 241 for supporting the silicon wafer W. The support hole 241 is circular and a center C2 of the support hole 241 is eccentric to the center C1 of the carrier ring 2. An eccentricity D of the center C2 of the support hole 241 to the center C1 of the carrier ring 2 is not limited but is preferably 1.7% or less of a diameter of the carrier ring 2. An inner diameter of the support hole 241 is not limited as long as it exceeds a diameter of the silicon wafer W, but is preferably different from the diameter of the silicon wafer W by 1 mm or less.

(11) It should be noted that the support ring 24 has not projection projecting into the support hole 241 and engageable with a notch N of the silicon wafer W.

(12) The rotation mechanism 3 includes the drive gear 31 designed to mesh with the internal gear 231 of the carrier ring 2, and a drive motor 32 for driving the drive gear 31.

(13) The grinding wheels 4 each include a substantially disc-shaped wheel base 41, and the plurality of grinding stones 42 arranged on a surface of the wheel base 41 along an outer edge at regular intervals. The wheel base 41 is provided with a grinding fluid inlet 43 at a center thereof, the grinding fluid inlet 43 penetrating the wheel base 41 from one side to the other side. A grinding fluid is supplied into the grinding wheel 4 through the grinding fluid inlet 43.

(14) Double-Head Grinding Method

(15) Next, description will be made on a double-head grinding method using the double-head grinding machine 1.

(16) As shown in FIG. 1, the silicon wafer W is ground by pressing the grinding wheels 4 onto both surfaces of the silicon wafer W set in a vertical position, and rotating the carrier ring 2 and the grinding wheels 4 while supplying the grinding fluid into the grinding wheels 4.

(17) Since the center C2 of the support hole 241 is eccentric to the center C1 of the carrier ring 2, for instance, an anticlockwise rotation of the carrier ring 2 as shown in FIG. 2 upon the start of the grinding causes the support hole 241 to move with respect to the silicon wafer W, bringing the support hole 241 and the silicon wafer W into contact with each other at a contact point P. An end surface of the silicon wafer W is thus pressed at the contact point P. At this time, a rotation moment is applied to the silicon wafer W, since the center of the silicon wafer W is decentered from the center C1 of the carrier ring 2. This rotation moment allows the silicon wafer W to rotate to be ground without the necessity of providing the carrier ring 2 with a projection engageable with the notch N.

Advantage(s) of Exemplary Embodiment(s)

(18) The above exemplary embodiment provides the following advantages.

(19) The support hole 241 of the carrier ring 2 is formed such that the center C2 of the support hole 241 is eccentric to the center C1 of the carrier ring 2.

(20) Such an eccentric arrangement allows the silicon wafer W to rotate to be ground without the necessity of providing the carrier ring 2 with a projection engageable with the notch N as described above. Thus, occurrence of nanotopography due to engagement between the notch N and the projection can be prevented to improve the grinding quality of the silicon wafer W without causing typical problems such as complication of the process and increase in costs.

Other Exemplary Embodiment(s)

(21) It should be noted that the machine and method are not limited to the above exemplary embodiment, but a variety of improvements or design changes compatible with the invention may be added.

(22) For instance, the eccentricity D of the center C2 of the support hole 241 to the center C1 of the carrier ring 2 may exceed 1.7% of the diameter of the carrier ring 2.

(23) The rotary ring 21 and the support ring 24 are exemplarily in the form of separate components made of different materials, but may be made of the same material. In the latter case, the rotary ring 21 and the support ring 24 may be in the form of separate components or in the form of a single component (carrier ring).

(24) The workpiece may be any object with a circular contour, such as ceramics and stones, as well as the silicon wafer W.

EXAMPLE(S)

(25) Next, the invention is described in further detail with reference to Example(s) and Comparative(s), which by no means limit the invention.

Example 1

(26) A double-head grinding machine (manufactured by KOYO MACHINE INDUSTRIES CO., LTD., DXSG320), which is structurally similar to the double-head grinding machine 1 used in the exemplary embodiment, was prepared. The carrier ring 2 shown in FIG. 2 was also prepared. In Example 1, the support hole 241 satisfying the following conditions was formed. It should be noted that the diameter of the silicon wafer W (workpiece) was 300 mm. Inner diameter: 301 mm or less Eccentricity D: 2 mm (0.67% of the diameter of the silicon wafer W)

(27) Both surfaces of the silicon wafer W were ground under the following conditions, and a sectional profile of the silicon wafer W including the locations of the center and the notch N was determined using a nanotopography measuring machine (manufactured by ADE Corporation, trade name: NanoMapper). FIG. 4 shows the results.

(28) As shown in FIG. 4, single gaussian filter height (profile data) shows that no unusual pattern occurred in the silicon wafer W near the notch N and on any other spot and a PV value (an index for quality evaluation of silicon wafers) was reduced. The quality of the silicon wafer has thus proven to be good. It should be noted that the single gaussian filter height is an index for showing a waviness in a large cycle due to machining (e.g., grinding) of a silicon wafer.

(29) Grinding Conditions Grit of grinding stone: #2000 Diameter of grinding wheel: 160 mm Rotation speed of grinding wheel: 4000 rpm Rotation speed of carrier ring: 40 rpm

Example 2

(30) The prepared carrier ring 2 was structurally the same as that of Example 1 except that the eccentricity D of the support hole 241 was 5 mm (1.67% of the diameter of the silicon wafer W). Both surfaces of the silicon wafer W of 300 mm were ground under the same conditions as in Example 1, and a sectional profile was determined. FIG. 4 shows the results.

(31) As shown in FIG. 4, since no unusual patter occurred in the silicon wafer W near the notch N and on any other spot in the same manner as in Example 1, the quality of the silicon wafer has proven to be good.

(32) Comparative

(33) A carrier ring 9 shown in FIG. 3 was prepared.

(34) The carrier ring 9 includes the rotary ring 21 and a support ring 94. The support ring 94 has a support hole 941. The support hole 941 has a center C3, which is aligned with the center C1 of the carrier ring 2, and is in a circular shape with the same inner diameter as that of the support hole 241 of Examples 1 and 2. In other words, the eccentricity D of the support hole 941 is 0 mm. Further, the support ring 94 is provided with a projection 942 projecting into the support hole 941 and engageable with the notch N of the silicon wafer W.

(35) The silicon wafer W of 300 mm was supported by the carrier ring 9 such that the notch N is engaged with the projection 942. Both surfaces of the silicon wafer W were then ground under the same conditions as in Example 1 and a sectional profile was determined. FIG. 4 shows the results.

(36) As shown in FIG. 4, an unusual pattern occurred near an end besides the notch N and a PV value (an index for quality evaluation) was increased due to this unusual pattern. The quality of the silicon wafer has thus proven to be lowered as compared with those of Examples 1 and 2. The above results are supposed to imply that an excessive pressing force generated between the notch N and the projection 942 warped the silicon wafer W being ground, causing abnormal grinding.

(37) In view of the above, it has been found that the grinding quality of the silicon wafer can be improved without causing typical problems such as complication of the process and increase in costs when the center of the support hole of the carrier ring is eccentric to the center of the carrier ring.