Surface acoustic wave device
11057015 ยท 2021-07-06
Assignee
Inventors
Cpc classification
H03H9/25
ELECTRICITY
H03H9/1092
ELECTRICITY
H03H9/1071
ELECTRICITY
International classification
H03H9/25
ELECTRICITY
Abstract
A surface acoustic wave device includes a piezoelectric substrate and functional elements on a first surface of the piezoelectric substrate. At least a portion of the functional elements includes an interdigital transducer (IDT) electrode, and a surface acoustic wave resonator is defined by the piezoelectric substrate and the IDT electrode. A portion of a wiring pattern connecting a first functional element and a second functional element is on a second surface different from the first surface of the piezoelectric substrate.
Claims
1. A surface acoustic wave device comprising: a piezoelectric substrate; a plurality of functional elements on a first surface of the piezoelectric substrate; and a protective resin member on the piezoelectric substrate; wherein an interdigital transducer (IDT) electrode is included in at least a portion of the plurality of functional elements, and a surface acoustic wave resonator is defined by the piezoelectric substrate and the IDT electrode; a portion of a wiring pattern connecting a first functional element and a second functional element included in the plurality of functional elements is provided on a second surface different from the first surface of the piezoelectric substrate; and at least one of the plurality of functional elements is connected to a terminal electrode provided at a side of the second surface of the piezoelectric substrate.
2. The surface acoustic wave device according to claim 1, wherein the second surface is a back surface when the first surface is set to be a front surface of the piezoelectric substrate.
3. The surface acoustic wave device according to claim 1, wherein the piezoelectric substrate is a multilayer substrate in which two or more substrate layers are laminated; the piezoelectric substrate includes a first substrate layer and a second substrate layer laminated on the first substrate layer; and the second surface is a surface between the first substrate layer and the second substrate layer.
4. The surface acoustic wave device according to claim 3, wherein the second substrate layer includes a back surface with a portion of another wiring pattern being provided on the back surface.
5. The surface acoustic wave device according to claim 3, wherein the piezoelectric substrate is housed in a box-shaped protective housing defined by a supporting substrate, a side wall portion, and a cover portion.
6. The surface acoustic wave device according to claim 1, wherein a first through-electrode and a second through-electrode penetrating from the first surface to the second surface are provided in the piezoelectric substrate; and the wiring pattern on the second surface is connected to the first functional element by the first through-electrode, and is connected to the second functional element by the second through-electrode.
7. The surface acoustic wave device according to claim 1, wherein the wiring pattern on the second surface is connected to the first functional element via a first wiring on a first side surface of the piezoelectric substrate, and is connected to the second functional element via a second wiring on a second side surface of the piezoelectric substrate.
8. The surface acoustic wave device according to claim 1, wherein when the piezoelectric substrate is viewed from a lamination direction in a plan view, at least a portion of a wiring pattern on the first surface intersects with the wiring pattern on the second surface.
9. The surface acoustic wave device according to claim 1, wherein a portion of the plurality of functional elements overlaps with the wiring pattern on the second surface when the piezoelectric substrate is viewed from a lamination direction in a plan view.
10. The surface acoustic wave device according to claim 1 further comprising: an input terminal and an output terminal; wherein the plurality of functional elements includes: a filter that passes a signal in a predetermined frequency band among input signals from the input terminal to the output terminal; and a cancel circuit connected in parallel to the filter between the input terminal and the output terminal; the cancel circuit attenuates a signal out of the predetermined frequency band among signals output from the output terminal; and at least a portion of the wiring pattern on the second surface extends to the output terminal from the input terminal through the cancel circuit.
11. The surface acoustic wave device according to claim 10, wherein the first functional element is the filter, the second functional element is the cancel circuit; and at least a portion of the wiring pattern on the second surface connects the filter and the cancel circuit.
12. The surface acoustic wave device according to claim 11, wherein the filter is a reception filter; the input terminal is connected to an antenna, and the output terminal is connected to a reception circuit; and the cancel circuit is connected in parallel to the reception filter.
13. The surface acoustic wave device according to claim 11, wherein the filter is a transmission filter; the input terminal is connected to a transmission circuit, and the output terminal is connected to an antenna; and the cancel circuit is connected in parallel to the transmission filter.
14. The surface acoustic wave device according to claim 10, wherein the cancel circuit includes: an amplitude adjustment circuit that adjusts an amplitude of the input signal; and a phase adjustment circuit that adjusts a phase of the input signal; the first functional element is the amplitude adjustment circuit, and the second functional element is the phase adjustment circuit; and at least a portion of the wiring pattern on the second surface connects the amplitude adjustment circuit and the phase adjustment circuit.
15. The surface acoustic wave device according to claim 10, wherein the cancel circuit further includes: a first amplitude adjustment circuit that adjusts an amplitude of the input signal; a phase adjustment circuit that adjusts a phase of a signal from the first amplitude adjustment circuit; and a second amplitude adjustment circuit that adjusts an amplitude of a signal from the phase adjustment circuit; the first functional element is the phase adjustment circuit; the second functional element is at least one of the first amplitude adjustment circuit and the second amplitude adjustment circuit; and at least one of a wiring pattern connecting the first amplitude adjustment circuit and the phase adjustment circuit, and a wiring pattern connecting the phase adjustment circuit and the second amplitude adjustment circuit is a portion of the wiring pattern on the second surface.
16. The surface acoustic wave device according to claim 15, wherein capacitors define the first amplitude adjustment circuit, and a surface acoustic wave vibrator defines the first phase adjustment circuit.
17. The surface acoustic wave device according to claim 1, wherein the plurality of functional elements includes: a transmission filter that filters a signal from a transmission circuit received at a first terminal and output the signal to an antenna; a reception filter that filters a signal received from the antenna and output the filtered signal to a reception circuit from a second terminal; and a cancel circuit connected between the first terminal and the second terminal; the cancel circuit reduces an influence of a signal received at the first terminal on a signal output from the second terminal; and a portion of the wiring pattern on the second surface is connected to the second terminal from the first terminal through the cancel circuit.
18. The surface acoustic wave device according to claim 1, wherein the piezoelectric substrate is made of a single crystal material of any one of lithium tantalate (LiTaO.sub.3), lithium niobate (LiNbO.sub.3), alumina (Al.sub.2O.sub.3), and sapphire, or a laminated material made of LiTaO.sub.3, LiNbO.sub.3, or silicon (Si).
19. A ladder filter comprising: the surface acoustic wave device according to claim 1; wherein the ladder filter includes: an input terminal and an output terminal; series arm resonance portions; and parallel arm resonance portions; the series arm resonance portions are connected in series to a series arm provided between the input terminal and the output terminal; and the parallel arm resonance portions are provided on a parallel arm connected between the series arm and a ground potential.
20. The ladder filter according to claim 19, wherein at least one of the series arm resonance portions defines a longitudinally coupled resonator filter including the surface acoustic wave resonator.
Description
BRIEF DESCRIPTION OF THE DRAWINGS
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DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS
(15) Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the drawings. Note that the same or corresponding portions in the diagrams are denoted by the same reference signs, and the description thereof will not be repeated.
First Preferred Embodiment
(16)
(17) The piezoelectric substrate 24 is laminated on the supporting substrate 27. The piezoelectric substrate 24 is preferably made of, for example, a piezoelectric single crystal material such as lithium tantalate (LiTaO.sub.3), lithium niobate (LiNbO.sub.3), alumina (Al.sub.2O.sub.3), and sapphire, or a piezoelectric laminated material made of LiTaO.sub.3, LiNbO.sub.3, or silicon (Si). A plurality of functional elements 30 are provided on a first surface 25 of the piezoelectric substrate 24. An example of the functional elements 30 includes, for example, a pair of comb-shaped electrodes (i.e., an IDT: interdigital transducer) made using an electrode material, such as a single metal composed of at least one of aluminum, copper, silver, gold, titanium, tungsten, platinum, chromium, nickel and molybdenum, or an alloy containing these as a main component. A surface acoustic wave resonator is defined by the piezoelectric substrate 24 and the IDT electrode.
(18) The support portion 22 is provided on the first surface of the piezoelectric substrate 24. By arranging the cover portion 20 to oppose the first surface 25 with the support portion 22 interposed therebetween, a space is defined around the plurality of functional elements 30 including the IDT electrodes. In this way, a surface acoustic wave propagates in a portion adjacent to the space of the piezoelectric substrate 24.
(19) A through-electrode 34 is preferably provided in the piezoelectric substrate 24 in a lamination direction (Z-axis direction in
(20) A portion of a wiring pattern (e.g., a wiring pattern 32 in
(21)
(22) The surface acoustic wave device 10 is preferably connected to a transmission circuit (not illustrated) by an input terminal (terminal TX), and is connected to an antenna (not illustrated) by an output terminal (terminal ANT). The surface acoustic wave device 10 is preferably a ladder filter including series arm resonance portions S1 to S4 connected in series to a series arm provided between the input terminal TX and the output terminal ANT, and parallel arm resonance portions P1 to P3 provided on a parallel arm connected between the series arm and a ground potential GND. Each resonance portion is preferably defined by one or more surface acoustic wave resonators, and corresponds to the functional elements 30 in
(23) One end of the parallel arm resonance portion P1 is connected to a connection node between the series arm resonance portion S1 and the series arm resonance portion S2, and the other end thereof is connected to the ground potential GND. One end of the parallel arm resonance portion P2 is connected to a connection node between the series arm resonance portion S2 and the series arm resonance portion S3, and the other end thereof is connected to the ground potential GND. One end of the parallel arm resonance portion P3 is connected to a connection node between the series arm resonance portion S3 and the series arm resonance portion S4, and the other end thereof is connected to the ground potential GND.
(24) Here, double circles indicated by V1, V2, V5, V8, V9 in
(25)
(26) Referring to
(27) The series arm resonance portion S3 is connected to the series arm resonance portion S4 by another wiring pattern and connected to one end of a wiring pattern L2 of the second surface 26 via the through-electrode V6. The other end of the wiring pattern L2 is connected to the parallel arm resonance portion P3 of the first surface 25 via the through-electrode V7. The parallel arm resonance portion P3 is further connected to the terminal GND of the second surface 26 via the through-electrode V8. The series arm resonance portion S4 is further connected to the terminal ANT of the second surface 26 via the through-electrode V9.
(28) Note that in the examples illustrated in
(29)
(30) In
(31) In addition, when the functional element and the wiring pattern are only on the first surface in a plane as illustrated in
(32) In the first preferred embodiment described above, a case where the piezoelectric substrate 24 is a single layer substrate has been described as the example. In this case, when the first surface 25 on which the functional element is arranged is the front surface, the second surface 26 is the back surface of the piezoelectric substrate 24. In the first variation, a case where the piezoelectric substrate is a multilayer substrate will be described.
(33)
(34) When the piezoelectric substrate 24A includes a plurality of substrates, not only a back surface 26B of the piezoelectric substrate 24A but also an intermediate surface 26A between the first substrate 24-1 and the second substrate 24-2 may be used as the second surface different from the first surface 25 (e.g., a front surface of the piezoelectric substrate 24A) on which the functional elements 30 are arranged. In
(35) Note that, a wiring pattern may be provided on both of the intermediate surface 26A and the back surface 26B. Further, in a case where the piezoelectric substrate is the multilayer substrate in which three or more substrates are laminated, the wiring pattern may be provided on a plurality of intermediate surfaces.
(36) In the case where the multilayer substrate is used as the piezoelectric substrate as described above, since the back surface and the intermediate surface is able to be used as the second surface different from the first surface on which the functional element is arranged, the degree of freedom in designing the functional element and the wiring pattern is further improved, and further miniaturization of the surface acoustic wave device is able to be achieved by designing the wiring pattern in an appropriate arrangement.
(37) In the first preferred embodiment and the first variation, the examples in which the functional element on the first surface of the piezoelectric substrate and the wiring pattern on the second surface are connected by the through-electrode have been described. In a second variation of the first preferred embodiment, an example will be described in which the functional element on the first surface and the wiring pattern on the second surface are connected using a wiring pattern on a side surface of the piezoelectric substrate.
(38)
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(40) As in the second variation, by connecting the wiring pattern on the second surface to the functional element on the first surface using the wiring pattern on the side surface, the surface area occupied by the functional element and the wiring pattern on the piezoelectric substrate is reduced in the same or substantially the same manner as in the example of
(41) Note that in the example illustrated in
(42) In the first preferred embodiment, the case where the surface acoustic wave device is the transmission filter of the communication device has been described as an example, but the configuration of the present preferred embodiment is also applicable to a case of a reception filter of the communication device.
(43)
(44) Referring to
(45) The series arm resonance portion S11 defines a longitudinally coupled resonator filter. The series arm resonance portion S11 includes IDT electrodes ID1 to ID3 and a reflector REF.
(46) One end of the IDT electrode ID2 is connected to the series arm resonance portion S10, and the other end thereof is connected to the ground potential GND via the through-electrode. The IDT electrode ID1 is arranged adjacent to a side surface on one side of the IDT electrode ID2. The IDT electrode ID3 is arranged adjacent to a side surface on the other side of the IDT electrode ID2. One end of each of the IDT electrodes ID1 and ID3 is connected to the output terminal RX. The other end of each of the IDT electrodes ID1 and ID3 is connected to the ground potential GND via the through-electrode. The reflector REF is arranged adjacent to each of the IDT electrodes ID1 and ID3.
(47) As can be seen from
(48) However, as illustrated in
(49) Note that the configurations of the first and second variations may also be applied to the third variation.
Second Preferred Embodiment
(50) In the first preferred embodiment, a case where the surface acoustic wave device is the transmission filter or the reception filter has been described, but in general, such a filter functions as a band-pass filter that passes a signal in a specific frequency band. In the band-pass filter, it is preferable that an attenuation amount in the frequency band outside the above described pass band is large.
(51) In such a case, a configuration is known in which an additional circuit is added in parallel to a filter as disclosed in, for example, Japanese Unexamined Patent Application Publication No. 2014-171210 to ensure the attenuation amount in the blocking band. The additional circuit, in general, generates a signal component having a phase opposite to that of the signal passing through the filter, and adds the signal component to the output signal, thus canceling the amplitude of the output signal in the blocking band to ensure the attenuation amount.
(52) On the other hand, when such an additional circuit is provided on the surface acoustic wave device, additional surface area on the piezoelectric substrate is required, so that the device size may be increased.
(53) Here, although the additional circuit is connected in parallel to the filter between the input terminal and the output terminal, as illustrated in
(54) Therefore, in the second preferred embodiment, a portion of the wiring pattern connecting the additional circuit and the input terminal and the output terminal is provided on the second surface, thus reducing the space required for the wiring pattern added by the additional circuit on the first surface. Therefore, the attenuation characteristics in the blocking band are improved by adding the additional circuit, and it is possible to reduce or prevent the increase in size of the device and to achieve the miniaturization of the device.
(55)
(56) Referring to
(57) Further, at least one of a portion of the wiring pattern (L3 in
(58)
(59) In the example illustrated in
(60) One end of the cancel circuit 100 is preferably connected to the terminal ANT of the second surface 26 via a through-electrode V9B, similarly to the series arm resonance portion S4. The other end of the cancel circuit 100 is connected to one end of the wiring pattern L3 of the second surface 26 via a through-electrode V10B. The other end of the wiring pattern L3 is preferably connected to a wiring pattern connected to a through-electrode V1B (i.e., the terminal TX) on the first surface 25 via a through-electrode V11B. Alternatively, as a wiring pattern L3A illustrated in
(61)
(62) As illustrated in
(63) Note that although
(64) In addition to the wiring patterns (L3 and L4) between the filter and the cancel circuit 100, as illustrated in
(65)
(66) One end of the capacitor C1 is connected to the input terminal TX, and the other end thereof is connected to one end of the surface acoustic wave vibrator 5100. The other end of the surface acoustic wave vibrator 5100 is connected to one end of the capacitor C2. The other end of the capacitor C2 is connected to the output terminal ANT.
(67) Here, the capacitors C1, C2 and the surface acoustic wave vibrator 5100 as the functional elements, are arranged on the first surface 25 of the piezoelectric substrate 24, and at least one of a portion of the wiring pattern (L5 in
(68) It should be noted that it is not essential to define the amplitude adjustment circuit by two capacitors, and only one of the capacitors C1 and C2 may be provided, if so desired.
(69) In this manner, since a portion of the wiring pattern connecting between the functional elements of the cancel circuit 100 is provided on the second surface 26, the space of the wiring pattern required for the first surface 25 is reduced, thus reducing or preventing an increase in the size of the device.
(70) Note that in the above description, the case where the cancel circuit is provided in the transmission filter has been described as an example, but the cancel circuit may also be applied to the reception filter as illustrated in
(71) In addition, such a cancel circuit may also be applied to a duplexer in which a transmission filter 210 and a reception filter 220 are provided in one device, as in a surface acoustic wave device 200 illustrated in
(72) In such a duplexer, since the antenna terminal ANT is shared by the transmission filter 210 and the reception filter 220, when a transmission signal is output from the transmission circuit 310 to the antenna 300, the transmission signal is also able to be transmitted to the reception circuit 320 via the reception filter 220. Further, depending on a distance between a wiring pattern connecting the transmission terminal TX and the transmission filter 210 and a wiring pattern connecting the reception filter 220 and the reception terminal RX, the signal on a transmission side may leak to a reception side due to capacitive coupling between the wiring patterns. Therefore, by providing the cancel circuit 270 between the transmission terminal TX and the reception terminal RX, it is possible to eliminate the influence caused by the transmission signal on the reception signal.
(73) When a cancel circuit is provided in such a duplexer, at least a portion of the wiring patterns (L10, L11, L20, L21, L30 and L31 in
(74) Note that although not illustrated in
(75) As described above, in the surface acoustic wave device, by defining a portion of the wiring pattern connecting between the functional elements on the second surface different from the first surface on which the functional elements are arranged on the piezoelectric substrate, an increase in the device size is able to be reduced or prevented and the degree of freedom in design is able to be improved.
(76) While preferred embodiments of the present invention have been described above, it is to be understood that variations and modifications will be apparent to those skilled in the art without departing from the scope and spirit of the present invention. The scope of the present invention, therefore, is to be determined solely by the following claims.