Method for implementing a CD-SEM characterisation technique
11055842 · 2021-07-06
Assignee
Inventors
Cpc classification
International classification
H01J37/22
ELECTRICITY
Abstract
A method for implementing a scanning electron microscopy characterisation technique for the determination of at least one critical dimension of the structure of a sample in the field of dimensional metrology, known as CD-SEM technique, the method including producing an experimental image representative of the structure of the sample and derived from a scanning electron microscope, from a first theoretical model based on parametric mathematical functions, calculating a second theoretical model obtained by algebraic summation of a corrective term, the corrective term being the convolution product between a given convolution kernel and the first theoretical model, the second theoretical model comprising a set of parameters to determine, and determining the set of parameters present in the second theoretical model by means of an adjustment between the second theoretical model and the experimental image.
Claims
1. Method for implementing a scanning electron microscopy characterisation technique for the determination of at least one critical dimension of the structure of a sample in the field of dimensional metrology, known as CD-SEM technique, said method comprising: producing an experimental image representative of the structure of the sample and derived from a scanning electron microscope; from a first theoretical model based on parametric mathematical functions, calculating a second theoretical model obtained by algebraic summation of a corrective term, said corrective term being the convolution product between a given convolution kernel and the first theoretical model, said second theoretical model comprising a set of parameters to be determined, the first and second theoretical models being a mathematical representation of the structure of the sample in the experimental image; determining the set of parameters present in the second theoretical model by means of an adjustment between said second theoretical model and said experimental image, the adjustment corresponding to a minimisation of a difference between said second theoretical model and said experimental image.
2. The method according to claim 1, wherein the second theoretical model is calculated according to the following formula:
Img(x,y)=G(x,y)C.sub..sup.+F(x,y)*[G(x,y)
3. The method according to claim 2, wherein the convolution kernel is a symmetrical one-dimensional function and wherein the convolution kernel is a Gaussian taken along the x axis, said Gaussian having a full width at half maximum proportional to sigma according to the following formula:
4. The method according to claim 2, wherein the convolution kernel is a two-dimensional symmetrical function and wherein the convolution kernel is two-dimensional symmetrical in the directions respectively parallel and normal to the scanning direction of the primary electron beam according to the following formula:
5. The method according to claim 1, wherein a primary electron beam scans a surface of the sample according to a TV or raster scan method, the scanning direction being the horizontal direction or x axis.
6. The method according to claim 1, wherein the convolution kernel is a symmetrical one-dimensional function.
7. The method according to claim 1, wherein the convolution kernel is a two-dimensional symmetrical function.
8. The method according to claim 1, wherein the convolution kernel has a mono-dimensional profile asymmetric along the scanning direction of the primary electron beam or a two-dimensional profile asymmetric along the scanning direction of the primary electron beam.
9. The method according to claim 1, said method being implemented for a calibration of the CD-SEM characterisation technique, said calibration comprising: producing an experimental image representative of the structure of a reference sample of which the geometric dimensions are known, said experimental image derived from a scanning electron microscope; wherein said set of parameters of the second theoretical model include both the known parameters which describe the geometric structure of the reference sample and the parameters to be determined which describe an instrumental response; determining the parameters present in the second theoretical model and describing the instrumental response by means of an adjustment between said second theoretical model and said experimental image representative of the structure of the reference sample.
10. Method for implementing a CD-SEM characterisation technique, said method comprising: producing a first experimental image representative of a structure of a sample of interest and derived from a scanning electron microscope; from a first theoretical model based on parametric mathematical functions, calculating a second theoretical model obtained by algebraic summation of a corrective term, said corrective term being the convolution product between a given convolution kernel and the first theoretical model, said second theoretical model comprising a set of parameters, said set of parameters including both parameters to be determined which describe a geometric structure of the sample of interest and parameters determined according to the calibration according to claim 9 which describes the instrumental response; determining the parameters present in the second theoretical model and describing the structure of the sample of interest by means of an adjustment between said second theoretical model and said first experimental image.
Description
LIST OF FIGURES
(1) Other characteristics and advantages of the invention will become clear from the description that is given thereof below, for indicative purposes and in no way limiting, with reference to the appended figures, among which:
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DETAILED DESCRIPTION
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(18) The method 100 according to the invention targets the implementation of a scanning electron microscopy characterisation technique for the determination of at least one critical dimension of the structure of a sample in the field of dimensional metrology. One application may be for example the measurement of a critical dimension of a pattern forming a printed circuit in microelectronics. The shape of the pattern may be any shape. The material of the pattern may also be any material. This pattern may for example be an isolated pattern or belong to a network of patterns repeated periodically. It may be a pattern obtained after any step (lithography, etching, etc.) of a manufacturing method.
(19) A step 101 of the method 100 according to the invention consists in producing an image representative of the structure of the sample and derived from a scanning electron microscope.
(20) According to a preferential embodiment of step 101 according to the invention, the primary electron beam scans the sample according to the so-called raster scan method. This scanning mode is represented by
(21) According to another embodiment of step 101 according to the invention, the primary electron beam scans the sample according to the so-called sawtooth method. This scanning mode is represented by
(22) According to another embodiment of step 101 according to the invention, the primary electron beam scans the sample according to the so-called bi-directional method. This scanning mode is represented by
(23) According to another embodiment of step 101 according to the invention, the primary electron beam scans the sample according to a method adapted to the shape of the objects to characterise. This scanning mode is represented by
(24) According to a step 102 of the method 100 according to the invention, from a parametric theoretical model of the surface of the sample a second theoretical model is calculated capable of taking into account dark mark type alterations of intensity, such as those present in the extension of the edges and often having the shape of black trails.
(25) More specifically, step 102 of the method 100 according to the invention comprises the modification of a first theoretical model called G(x, y) to obtain a second theoretical model called Img(x, y). The model G(x, y) is a parametric model of the response of the microscope to the structure of the sample obtained for example by one of the methods described in the articles CD characterization of nanostructures in SEM metrology (C. G. Frase, E. Buhr, and K. Dirscherl, Meas. Sci. Technol., vol. 18, n.sup.o 2, p. 510, Feb. 2007) or Analytical Linescan Model for SEM Metrology (C. A. Mack and B. D. Bunday, Metrology, Inspection and Process Control for Microlitography XXIX, Proc. SPIE Vol. 9424 2015) or AMAT or other. The function G(x, y) thus represents a theoretical image of the structure of the sample without effects linked to the scanning direction. For example, the theoretical image without scanning effect G(x, y) is obtained by the application of the model M((x, y)) where (x, y) is the signed distance to the edges of the imaged object. Like the function M(x), this theoretical model contains a set of parameters to be determined and that represent both information on the geometry of the sample and on the instrumental response without the scanning direction taken into account.
(26) Next the second theoretical model, Img(x, y), is calculated. Said second theoretical model is obtained by algebraic summation of a corrective term to the first theoretical model, said corrective term being a convolution product between a given convolution kernel and the first theoretical model.
(27) According to an embodiment of step 102 of the method 100 according to the invention, the second theoretical model is calculated according to the following formula
Img(x,y)=G(x,y)C.sub..sup.+F(x,y)*[G(x,y)
(28) In which: G(x,y) is the first theoretical model based on parametric mathematical functions; (x,y) are the spatial coordinates associated with each point of the image along the two orthogonal directions x and y; Img(x,y) is the second theoretical model obtained by the application of the corrective term; F(x,y) is the given convolution kernel;
(29) An advantage of this embodiment arises in the formula (1) of the convolution product calculated between the kernel F(x, y) and the difference G(x, y)
(30) Generally speaking, the convolution kernel F(x, y) is a function of the spatial coordinates (x,y) or instead spatial coordinates chosen according to any coordinates system.
(31) The present invention may be implemented with any function F(x,y), providing that the result of formula (1) presented above is well defined. As an example, according to the different embodiments of the present invention, symmetrical, asymmetrical or anisotropic convolution kernels may be used.
(32) According to an embodiment of step 102 of the method 100 according to the invention, the electron beam scans the surface of the sample according to the so-called raster scan method illustrated by
(33) According to an embodiment of step 102, the convolution kernel is a mono-dimensional symmetrical function along one direction of space.
(34) According to an embodiment of step 102, the convolution kernel is a Gaussian taken along the x axis, said x axis corresponding to the scanning direction of the primary electron beam, said Gaussian having a full width at half maximum proportional to sigma, according to the following formula:
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(36) It may be remarked in this case that the convolution kernel F(x,y) is a constant function along the vertical direction y, which explains why the variable y does not appear in the convolution product.
(37) An advantage of this embodiment is to be particularly suited to taking into account drops in intensity in the extension of the edges in the horizontal direction in the case of scanning in raster scan mode.
(38) According to an embodiment of step 102 of the method 100 according to the invention, the convolution kernel is a symmetrical two-dimensional function.
(39) According to an embodiment of step 102 of the method 100 according to the invention, the convolution kernel is symmetrical in the directions respectively parallel and normal to the scanning direction of the primary electron beam according to the following formula:
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(41) An advantage of this embodiment is to be able to choose a convolution kernel capable of taking into account particular local effects, for example those in correspondence with the corners of the patterns forming the structure of the sample.
(42) Another advantage of this embodiment is to be able to be adapted to a different scanning method from the raster scan mode.
(43) According to an embodiment of step 102 of the method 100 according to the invention, the convolution kernel has an asymmetric profile along at least one of the directions x or y. An example is illustrated by
(44) An advantage of this embodiment is to be able to adapt the convolution kernel to the scanning mode employed and to the type of patterns present on the sample.
(45) According to a step 103 of the method 100 according to the invention, the adjustment between the formula (1) and the experimental image is carried out. This adjustment makes it possible to find the set of parameters present in (1) that minimises the differences between the theoretical model and the experimental image, for example by using one of the known algorithms that apply the least squares method. Like the model G(x,y), the model Img(x,y) contains several parameters, including the parameters describing the geometry of the sample and used to deliver the critical dimension of interest.
(46) According to an embodiment of step 103 of the method according to the invention, a calibration step is carried out to determine the parameters present in the model and linked to the instrumental response. These parameters form part of the set of parameters already present in the first theoretical model and they take into account, for example, the fact that the primary electron beam has a non-zero size. Often the shape of the primary electron beam is described as a Gaussian profile. This Gaussian function taking into account the characteristics of the primary electron beam is called point spread function or PSF. The parameters describing the instrumental response, for example the parameters of the PSF function, may advantageously be determined during a preliminary calibration step. The calibration is obtained by carrying out an adjustment between the formula (1) and the experimental image of a sample of which the structure is known. This makes it possible to fix the geometric parameters during the calibration step and to obtain in a more reliable manner the parameters describing the instrumental response. The values of the parameters describing the instrumental response will next be fixed during the implementation of the CD-SEM technique for the characterisation of an experimental image of interest.
(47) An advantage of carrying out the calibration step is to be able to determine in a more precise and reliable manner the parameters describing the instrumental response. Next these parameters describing the instrumental response will be fixed during the implementation of the CD-SEM technique for the characterisation of an experimental image of interest, which makes it possible to attain a more precise and reliable determination of the parameters describing the structure of the sample and thus the critical dimensions of interest
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(50) The convolution kernel chosen in this case is a one-dimensional Gaussian taken along the x axis. The image 5c derived from the method according to the invention reproduces the characteristics of the experimental image 5a in a more precise manner with respect to the theoretical model derived from the parametric functions (image 5b). More specifically, in image 5c may be seen black trails, indicated by the arrows Tc, which reproduce the black trails observed on the CS-SEM image 5a. These images show how the method according to the invention reproduces precisely the dark mark type artefacts or black trails in the extension of the edges along the scanning direction of the primary electron beam.
(51) The implementation of the method according to the invention shown in