PROCESS FOR THE MANUFACTURE OF ENCAPSULATED SEMICONDUCTOR DIES AND/OR OF ENCAPSULATED SEMICONDUCTOR PACKAGES

Abstract

A process for the manufacture of encapsulated semiconductor dies and/or of encapsulated semiconductor packages or for the manufacture of an encapsulation of semiconductor dies and/or of semiconductor packages comprising the steps: (1) assembling a multitude of bare semiconductor dies on a temporary carrier, and (2) encapsulating the assembled bare semiconductor dies, characterized in that an aqueous hydraulic hardening inorganic cement preparation is applied as encapsulation agent in step (2).

Claims

1. A process for the manufacture of encapsulated semiconductor dies and/or of encapsulated semiconductor packages or for the manufacture of an encapsulation of semiconductor dies and/or of semiconductor packages comprising the steps: (1) assembling a multitude of bare semiconductor dies on a temporary carrier, and (2) encapsulating the assembled bare semiconductor dies, wherein an aqueous hydraulic hardening inorganic cement preparation is applied as encapsulation agent in step (2).

2. The process of claim 1, further comprising the steps: (3) removing the temporary carrier, and (4) singulating the encapsulated semiconductor dies and/or encapsulated semiconductor packages.

3. The process of claim 1, wherein the bare semiconductor dies are assembled so as to have a distance in the range of 30 to 70 m between themselves, wherein the distance defines space to be filled with the aqueous hydraulic hardening inorganic cement preparation during step (2).

4. The process of claim 1, wherein step (2) is performed such that the aqueous hydraulic hardening inorganic cement preparation is applied onto and between the bare semiconductor dies and is allowed to harden hydraulically and to dry.

5. The process claim 1, wherein the aqueous hydraulic hardening inorganic cement preparation is made by mixing hydraulic hardenable inorganic cement with water or by mixing of hydraulic hardenable inorganic cement with water and with at least one further constituent.

6. The process of claim 5, wherein the hydraulic hardenable inorganic cement is a powder selected from the group consisting of Portland cement, alumina cement, magnesium oxide cement, and phosphate cement.

7. The process of claim 1, wherein the application of the aqueous hydraulic hardening inorganic cement preparation is carried out by compression molding or by transfer molding.

8. The process of claim 1, wherein the aqueous hydraulic hardening inorganic cement preparation is applied so as to form an encapsulation having a thickness of 30 to 1000 m on top of the semiconductor dies.

9. The process of claim 2 to comprising an intermediate step (3) between steps (3) and (4) of providing encapsulated semiconductor dies with electrical insulation means and electrical interconnection.

10. The process of claim 2, wherein the singulating of step (4) is performed by diamond sawing or laser cutting.

11. An encapsulated semiconductor die or an encapsulated semiconductor package obtainable by a process of claim 1.

12. An encapsulated semiconductor die comprising or comprised of a bare semiconductor die and an encapsulation of a hydraulic hardened inorganic cement composition or an encapsulated semiconductor package comprising or comprised of at least 2 bare semiconductor dies and an encapsulation of a hydraulic hardened inorganic cement composition.

13. The encapsulated semiconductor die or the encapsulated semiconductor package of claim 12, wherein the hydraulic hardened inorganic cement composition consists of hydraulic hardened inorganic cement.

14. The encapsulated semiconductor die or the encapsulated semiconductor package of claim 12, wherein the hydraulic hardened inorganic cement composition consists of 2 to 99.5 wt.-% of hydraulic hardened inorganic cement and 0.5 to 98 wt.-% of one or more further constituents.

15. The encapsulated semiconductor die or the encapsulated semiconductor package of claim 12, wherein the hydraulic hardened inorganic cement composition is based on hydraulic hardenable inorganic cement selected from the group consisting of Portland cement, alumina cement, magnesium oxide cement and phosphate cement.

Description

WORKING EXAMPLE

[0061] 5 pbw (parts by weight) of a magnesium oxide cement powder with a maximum particle size of 50 m, 6 pbw 2-imidazolidinone, 11 pbw microsilica with a maximum particle size of 5 m, 65 pbw aluminum oxide powder with a maximum particle size of 100 m and 12 pbw water were mixed to form an aqueous hydraulic hardening inorganic cement preparation.

[0062] 300 m thick bare semiconductor dies having a square format of 3 mm3 mm were assembled on a release tape of a steel sheet carrier in a regular arrangement of semiconductor packages (3 semiconductors per package) with a gap width of 300 m between the packages and with a 50 m gap width between the individual dies. The aqueous hydraulic hardening inorganic cement preparation was overmolded between and in 150 m thickness on top of the semiconductor dies. The so-applied aqueous hydraulic hardening inorganic cement preparation of the so-formed structure was allowed to harden hydraulically for 4 hours at 20 C. Then the structure was heated up to 90 C. object temperature in an oven at a heating rate of 1 K/min and kept at 90 C. for 1 hour. Thereafter, the object temperature was increased to 160 C. at a heating rate of 1 K/min and kept at 160 C. for 1 hour. After cooling, the structure so obtained was subject to diamond sawing in the course of which the encapsulated semiconductor packages were singulated.