MAGNETIC FIELD SENSOR

Abstract

A magnetic field sensor for measuring a variable magnetic field, in particular for a movement sensor or position sensor, has a magnetoresistive sensor chip and a flat sensor carrier carrying the sensor chip. The carrier has an upper side from which the sensor chip is electrically contactable, the upper side of the sensor carrier having a recess or depression in which the sensor chip is arranged. The sensor chip is electrically contactable from the upper side and that the sensor chip receives a magnetic field to be measured via an underside of the sensor carrier. A manufacturing method for manufacturing an above magnetic field sensor and a measuring method are proposed.

Claims

1-14. (canceled)

15. A magnetic field sensor for measuring a variable magnetic field, comprising: a magnetoresistive sensor chip; a flat sensor carrier carrying the sensor chip and having an upper side and an underside, the upper side of the sensor carrier having a recess in the form of a penetration through the sensor carrier in which the sensor chip is arranged; the sensor chip being electrically contactable from the upper side of the sensor carrier via connection points provided on the sensor chip, and the sensor chip receiving via the underside of the sensor carrier a magnetic field to be measured which is generated by a generating sensor magnet movable along the underside of the sensor carrier; and a protective jacket filling in and/or covering the recess in the sensor carrier, the protective jacket having an ending flush with, or protruding above, the upper side of the sensor carrier for mechanical stabilization and passivation of the sensor chip.

16. The magnetic field sensor according to claim 15, wherein the protective jacket is a Glob Top protective jacket.

17. The magnetic field sensor according to claim 15, wherein the sensor chip is positioned on and fastened to the sensor carrier from the upper side.

18. The magnetic field sensor according to claim 15, wherein the underside of the sensor carrier is coated with a carrier film and/or with a tribological protective layer.

19. The magnetic field sensor according to claim 15, wherein the underside of the sensor carrier is coated with a Kapton film.

20. The magnetic field sensor according to claim 15, wherein the recess is step-like and has a deepened connection area with bond pads.

21. The magnetic field sensor according to claim 20, wherein bonding wires are laid inside the recess such that they do not protrude above the upper side of the sensor carrier.

22. The magnetic field sensor according to claim 15, wherein the sensor chip comprises a carrier substrate which ends flush with the underside of the sensor carrier in the recess, and the thickness of the carrier substrate is less than 100 m, or less than 50 m, or less than 30 m.

23. The magnetic field sensor according to claim 15, wherein a tribological protective layer is applied as mechanical protection to the underside of the sensor carrier.

24. A Manufacturing method for manufacturing a magnetic field sensor according to claim 15, the method comprising: creating a recess in the form of a penetration through a sensor carrier extending from an upper side of the sensor carrier towards an underside of the sensor carrier; at least temporary fastening a sensor chip in the recess in an area of the underside of the sensor carrier; bonding the sensor chip to bond pads of the sensor carrier; filling in and/or covering of recess with a protective jacket for mechanical stabilization and passivation of the sensor chip, the protective jacket being either flush with the upper side of the sensor carrier or protruding in an overlapping manner beyond the recess of the sensor carrier.

25. The manufacturing method according to claim 24, further comprising positioning and fixing the sensor chip on to a carrier film that is at least temporarily attached to the underside of the sensor carrier, for at least temporary fastening the sensor chip.

26. The manufacturing method according to claim 25, wherein the carrier film is a Kapton film.

27. The manufacturing method according to claim 24, further comprising grinding down a carrier substrate of the sensor chip to a substrate thickness of less than 100 m, or less than 50 m, or less than 30 m.

28. The manufacturing method according to claim 24, further comprising applying a tribological protective layer to the underside of the sensor carrier.

29. The manufacturing method according to claim 24, further comprising grinding flat the underside of the sensor carrier at least in an area around the recess after embedding of the sensor chip.

30. The manufacturing method according to claim 24, wherein the recess in the carrier substrate is step-like in order to provide a deepened connection area on which bond pads are arranged.

31. The manufacturing method according to claim 30, further comprising laying bonding wires inside the recess during bonding such that the bonding wires do not protrude above the upper side of the sensor carrier.

32. A measuring method comprising: providing a magnetic field sensor according to claim 15; moving a sensor magnet along the underside of the sensor carrier; and processing and/or evaluating measurement signals of the sensor chip by an evaluation device arranged on the upper side of the sensor carrier.

Description

BRIEF DESCRIPTION OF THE DRAWINGS

[0044] Further advantages emerge from the following drawing description. The drawing shows examples of the invention. The drawing, the description and the claims contain many features in combination. The person skilled in the art will also consider the features individually, and combine them into useful further combinations.

[0045] FIGS. 1a and 1b are views of a first embodiment of a magnetic field sensor, in a cross-section and in a plan view onto the upper side of the sensor carrier;

[0046] FIG. 2 is a cross-section view through a further embodiment of a magnetic field sensor;

[0047] FIG. 3 is a sectional representation in a plan view onto an upper side of a magnetic field sensor of a further embodiment of the invention;

[0048] FIG. 4 is a cross-section of a magnetic field sensor of a further embodiment of the invention;

[0049] FIG. 5 illustrates an example of a measuring method by means of a magnetic field sensor according to an embodiment of the invention;

[0050] FIGS. 5a and 5b are views of an embodiment of a measuring method making use of various magnetic field sensors according to the invention.

[0051] In the figures, identical or similar components have the same reference numerals. The figures show only examples and must not be understood as limiting.

DETAILED DESCRIPTION OF THE INVENTION

[0052] FIGS. 1a and 1b show a first example 10 of a magnetic field sensor according to the invention. FIG. 1a shows a cross-section and FIG. 1b a plan view onto a sensor carrier 14 embedding a sensor chip 12. The sensor carrier 14 can be designed as a PCB (printed circuit board) or as a chip substrate. The sensor chip 12 can be designed as a magnetoresistive sensor chip, in particular as a magnetoresistive Wheatstone bridge circuit for determining one or more vector components of a magnetic field and which is able to measure direction-sensitively or omnidirectionally at least one component of a magnetic field in the direct vicinity and to determine its size. The sensor chip can be based on a HALL, AMR, GMR, TMR or other magnetoresistive technology.

[0053] Further electrical connections, not shown, are arranged on the sensor carrier 14 for voltage supply and for pickup of sensor values. Electrical contacting between the sensor chip 12 and the sensor carrier 14 is achieved by bonding wires 22 connecting connection points on the sensor chip 12 to bond pads 20 on the sensor carrier 14.

[0054] Further electrical connections, not shown, to an external electronic evaluation unit extending from the bond pads 20 are provided. For example, for one 2D sensor two bond pads 20 can be provided for voltage supply and four further bond pads for pickup of sensor values for an X-sensitive and a Y-sensitive magnetic field component in the plane of the sensor carrier, which are measurable by two Wheatstone bridges rotated by 90 on the sensor chip 12, in order to determine a magnetic field component directed in the plane of the sensor carrier 14 depending on the direction. From this, it is for example possible by an arc tangent operation to determine an angle of a magnetic field in the plane of the sensor carrier 14.

[0055] The sensor chip 12 is arranged in a recess 16 of the sensor carrier. The recess can be shaped as a circular hole or, as shown in this example, as a rectangular hole in the sensor carrier 14. The recess 16 can also have the form of a slot, for example in order to record over a predefined length a magnetic field component in the form of a line scanner.

[0056] For protection of the sensor chip 12, the bonding wires 22 and the bond pads 20, the recess and an area above it on the surface of the sensor carrier 14 are provided with a protective jacket 26, for example an epoxy resin, by means of Glob Top passivation. A carrier film 24, for example a Kapton film, is applied to the underside of the sensor carrier 14, on which the sensor chip 12 is placed and fastened at least temporarily during mounting, and which subsequently acts as a protective layer against mechanical wear and helps reduce sliding friction of a sensor magnet for example by means of tribological properties. The thickness of the carrier film 24 determines at the same time the minimum distance between the sensor chip 12 and a sensor magnet, not shown in this example.

[0057] FIG. 2 shows, correspondingly to the embodiment of FIG. 1, a further example 30 of a magnetic field sensor. This corresponds substantially to the construction of the example 10 in FIGS. 1a, 1b. However a carrier film 24 is provided on the underside 46 of the sensor carrier. Said film can be attached for a short period in the manufacturing process in order to fasten the sensor chip 12 temporarily, to provide the electrical wiring by means of bonding wires 22 to the sensor carrier 14, and then to be removed. The sensor chip 12 is therefore embedded in the recess 16 only by the protective jacket 26, and is practically open in the direction of the underside of the sensor carrier 14 or is only protected by a wafer-thin Glob Top layer. As a result, an extremely minimal distance to a sensor magnet of a few micrometers is possible.

[0058] FIGS. 3a, 3b show a further example 40 of a magnetic field sensor. FIG. 3a shows a section, and FIG. 3b a plan view onto the sensor carrier 14 with the embedded sensor chip 12. Unlike in the embodiments 10, 30 shown in FIGS. 1a, 1b and 2, in this embodiment 40 a step-like deepened connection area 36 is provided in the recess 16, which is offset downwards in a step relative to the level of the upper side 44 of the sensor carrier and on which pads 20 are arranged. Bonding wires 22 connect electrical connection points of the sensor chip 12 to the bond pads 20 on the deepened connection area 36 of the sensor carrier 14. This makes it possible, by careful laying of the bonding wires 22, to provide a structural height both of the sensor chip 12 and of the electrical connection to the bond pads 20 that does not project beyond the upper side 44 of the sensor carrier 14. Passivation by means of a protective jacket 26, for example Glob Top, fills up both the step-like connection area 36 and the recess 16, and thus encloses the sensor chip 12 at least from the upper side and the side areas, and also the bond pads 20 and bonding wires 22.

[0059] In the embodiment 40, a magnetic field sensor can be created by means of the deepened connection area 36, where the entire sensor chip 12 with wiring attains a structural height which extends no higher than the upper side 44 of the sensor carrier 14. This allows an extremely thin-walled magnetic field support to be achieved which can be used in particular for measuring work in areas with restricted space. The example here shows an external circuit on the sensor carrier 14 by means of electronic elements 28, which can have an electrical connection to the bond pads 20.

[0060] In the example 40, similarly to the example 10, a carrier film 24 is applied to the underside 46 of the sensor carrier 14 and can have tribological properties and provides protection for the underside of the sensor chip 12 embedded from the upper side and from the lateral sides.

[0061] FIG. 4 shows similarly to FIG. 2 a further example 50 of a magnetic field sensor, which follows in its construction the example 40, and likewise has a deepened connection area 36. Unlike in the preceding examples, however, the magnetic field sensor 50 has no recess 16, but a depression 18 in the sensor carrier, so that a thin wall area 34 in the sensor carrier limits the underside of the depression 18. The width of this thin wall area of the sensor carrier 14 thus determines a minimum distance to a sensor magnet and acts as the rest surface of the sensor chip 12. The sensor chip 12 is placed onto this thin wall area 34 during manufacture, and bonding wires 22 put it into contact with bond pads 20 in the deepened connection area 36. Here too, this depression 18 is filled by means of Glob Top passivation 26, so that the sensor chip and the electrical connection are completely enclosed. This results in increased mechanical protection and passivation, where the manufacture of the thin wall area 34 can be achieved for example by a 3-D printing method for construction of the sensor carrier 14. The underside 46 of the sensor carrier 14 is designed homogeneous, so that a continuous sliding layer for a sensor magnet can be provided.

[0062] FIGS. 5a and 5b show an application of an example 30 or 10 for measurement of a linear movement of a sensor magnet 38. The sensor magnet 38 moves along the underside 46 of the sensor carrier. The sensor chip 12 is embedded in a recess or in a depression of the sensor carrier 14, and passivated. To do so, a passivation layer 26 for example on the upper side 44 of the sensor carrier 14, and facing away from the sensor magnet 38 during intended use, can be protected. The sensor magnet 38 moves in surface contact with the underside 46 of the sensor carrier 14, as shown in FIG. 5a. To reduce the friction resistance, a tribological protective layer 42, which can for example be provided by a carrier film 24, can be applied to the underside 46. This does increase the minimum distance between sensor magnet 38 and sensor chip 12, but can be formed in the range from 10 m to 30 m, improving the mechanical protection and reducing the friction effect, so that even very minor magnetic field fluctuations can be received by the sensor chip 12, and the sensor magnet 38 can be correspondingly small, compact and of low field strength.

[0063] The magnetic field sensor in accordance with the invention achieves an extremely reduced distance of the sensor magnet 38 to the sensor chip 12 that can be considerably less than 100 m. The sensor magnet 38 moves here on the underside 46 of the sensor carrier 14. The chip thickness of the sensor chip 12 defines the lowest possible distance of the magnetoresistive resistor structures to the sensor magnet 38. Depending on requirements, the substrate of the sensor chip 12 can also be ground, i.e. abrasively reduced, to a reduced dimension to allow a required minimum distance of 30 m to 100 m to the magnetoresistive structures on the chip 12 to be achieved.

[0064] The advantage of the proposed magnetic field sensor is based on the fact that no substantial change in the layout of the sensor chip 12 or even of the enclosing sensor carrier 14 is necessary in existing sensor applications, and only the attachment depth of the sensor chip on the substrate carrier is changed. Standard chips can be used as sensor chips 12, and the existing chip-on-board technology can remain in use to allow the chip 12 to be electrically connected to the substrate carrier 14. The sensor chip 12 is inserted deeper than or flush with the substrate carrier 14, but can also protrude out of the recess or depression on the upper side, where tribological sliding layers can be applied without any problem to the underside 46. The sensor magnet 38 can, during intended use, come into surface contact with the sensor chip 12 and yet ESD damage is largely ruled out, since there is no unwelcome electrical charging due to contact thanks to a plastic packaging layer.

REFERENCE NUMERAL LIST

[0065] 10 First example of a magnetic field sensor

[0066] 12 Sensor chip

[0067] 14 Sensor carrier/PCB

[0068] 16 Recess in sensor carrier

[0069] 18 Depression in sensor carrier

[0070] 20 Bond pad

[0071] 22 Bonding wire

[0072] 24 Carrier film

[0073] 26 Protective jacket

[0074] 28 Electronic component/evaluation device

[0075] 30 Second example of a magnetic field sensor

[0076] 32 Electronic component/evaluation device

[0077] 34 Thin wall area of the sensor carrier

[0078] 36 Deepened connection area in the sensor carrier

[0079] 38 Sensor magnet

[0080] 40 Third example of a magnetic field sensor

[0081] 42 Tribological protective layer

[0082] 44 Upper side of the sensor carrier

[0083] 46 Underside of the sensor carrier

[0084] 50 Fourth example of a magnetic field sensor