Conductive film and display apparatus provided with same
10888038 ยท 2021-01-05
Assignee
Inventors
Cpc classification
H05K9/00
ELECTRICITY
G06F2203/04112
PHYSICS
International classification
Abstract
The present invention discloses a conductive film and a display apparatus provided with the conductive film. A conductive film is disposed on a display panel of a display apparatus, and has a base body, and a conductive section formed on one of the main surfaces of the base body. The conductive section has a mesh pattern composed of fine metal lines, and the fine metal lines have a tilt of 30-44 with respect to the alignment direction of pixels of the display apparatus.
Claims
1. A conductive member for a display panel comprising a first conductive part having a first pattern, a second conductive part having a second pattern, and electrically isolated from the first conductive part, wherein a combined pattern of an overlay of the first pattern of the first conductive part and the second pattern of the second conductive part forms a mesh pattern, the mesh pattern has a rhombic shape, a vertex angle of the rhombic shape has at an angle of 60 to 88 or 92 to 120, the rhombic shape has an angle of 30 to 44 or 46 to 60 with respect to a first direction, the first direction is parallel to an arrangement direction of pixels of the display panel.
2. A touch sensor comprising the conductive member according to claim 1.
3. A touch panel comprising the conductive member according to claim 1.
4. A conductive member for a touch panel display comprising a first conductive part having a first pattern, a second conductive part having a second pattern and electrically isolated from the first conductive part, wherein an overlay of the first pattern of the first conductive part with the second pattern of the second conductive part forms a mesh pattern, wherein an opening of the mesh pattern has a rhombic shape; a vertex angle of the rhombic shape has at an angle of 60 to 88 or 92 to 120, the rhombic shape has an angle of 30 to 44 or 46 to 60 with respect to a first direction, the first direction is parallel to an arrangement of pixels of the display panel.
5. A touch sensor comprising the conductive member according to claim 4.
6. A touch panel comprising the conductive member according to claim 4.
Description
BRIEF DESCRIPTION OF DRAWINGS
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DESCRIPTION OF EMBODIMENTS
(22) Several embodiments of the conductive film and the display device containing the conductive film of the present invention will be described below with reference to
(23) A first embodiment will be described below with reference to
(24) As shown in
(25) Specifically, in the conductive part 14, a plurality of first thin metal wires 16a and a plurality of second thin metal wires 16b are crossed to form the mesh pattern 20, the first thin metal wires 16a extend in a first oblique direction (an x direction shown in
(26) The conductive film 10 can be used as an electromagnetic-shielding film of a display device 30 shown in
(27) The pitch Ps (hereinafter referred to also as the thin wire pitch Ps) may be selected within a range of 100 to 400 m. The line width of the thin metal wire 16 may be 30 m or less. In a case where the conductive film 10 is used as the electromagnetic-shielding film, the line width of the thin metal wire 16 is preferably 1 to 20 m, more preferably 1 to 9 m, further preferably 2 to 7 m. In a case where the conductive film 10 is used as the conductive touch panel film, the line width of the thin metal wire 16 is preferably 0.1 to 15 m, more preferably 1 to 9 m, further preferably 2 to 7 m.
(28) The rhombic mesh shape 22 has two narrow angles of the four vertex angles, and half of each narrow angle is 30 to 44. Thus, in a case where an imaginary line 24 extends in the opening 18 in the horizontal direction and connects a plurality of intersection points in the mesh pattern 20, an angle (an oblique angle ) between the imaginary line 24 and the first thin metal wire 16a is 30 to 44.
(29) As shown with partial omission in
(30) The size of the rhombus of the mesh shape 22 will be described below with reference to
(31) In a case where the pixels 32 are arranged in the horizontal direction in the display device 30 (see
(32) As shown in
(33) For example, in a case where the conductive film 10 is used as the electromagnetic-shielding film, the conductive film 10 is disposed on the display panel of the display device 30. In this case, as described above, the arrangement period difference between the pixels 32 and the thin metal wires 16 can be reduced to prevent the moire generation. In addition, since the thin metal wires 16 in the mesh pattern 20 has a pitch Ps of 100 to 400 m and a line width of 30 m or less, the electromagnetic-shielding film can exhibit both of a high electromagnetic-shielding property and a high light transmittance.
(34) A display device having a touch panel such as a projected capacitive touch panel will be described below with reference to
(35) A touch panel 50 has a sensor body 52 and a control circuit such as an integrated circuit (not shown). As shown in
(36) As shown in
(37) The first conductive pattern 64A has two or more small lattices 70. In the example of
(38) The first conductive pattern 64A is not limited to the example using the first large lattices 68A. For example, the first conductive pattern 64A may be such that a large number of the small lattices 70 are arranged to form a strip-shaped mesh pattern, and a plurality of the strip-shaped mesh patterns are arranged in parallel and are isolated from each other by insulations. For example, two or more of strip-shaped first conductive patterns 64A may each extend from a terminal in the m direction and may be arranged in the n direction.
(39) In this example, the small lattice 70 is shown as the smallest rhombus in the drawings, and has a shape equal or similar to the above mesh shape 22 (see
(40) The size of the first large lattice 68A will be described below with reference to
(41) Furthermore, among the four sides (the first to fourth sides 69a to 69d) of the first large lattice 68A, the first side 69a and the fourth side 69d are arranged adjacent to each other in the vertical direction (the n direction), and the intersection of an extended line of the first side 69a and the fourth side 69d corresponds to a third corner 71c. Similarly, the second side 69b and the third side 69c are arranged adjacent to each other in the vertical direction, and the intersection of the second side 69b and an extended line of the third side 69c corresponds to a fourth corner 71d.
(42) The second direction length of the first large lattice 68A corresponds to a distance Lva between the first corner 71a and the second corner 71b in the vertical direction, and the first direction length of the first large lattice 68A corresponds to a distance Lha between the third corner 71c and the fourth corner 71d in the horizontal direction.
(43) In this case, the size, i.e. the aspect ratio (Lva/Lha), of the first large lattice 68A satisfies the condition of 0.57<Lva/Lha<1.74.
(44) In a case where the horizontal direction (the m direction) is equal to the pixel arrangement direction of the display device 30 (see
(45) Also the small lattice 70 satisfies a similar condition. As shown in
(46) In a case where the horizontal direction is equal to the pixel arrangement direction of the display device 30 (see
(47) As described above, the line width of the small lattice 70 (i.e. the thin metal wire 16) may be 30 m or less. The side length of the small lattice 70 may be selected within a range of 100 to 400 m. Incidentally, in the first large lattice 68A, the first oblique direction (the x direction) is parallel to the first side 69a (and the third side 69c), and the second oblique direction (the y direction) is parallel to the second side 69b (and the fourth side 69d).
(48) In the case of using the first large lattices 68A in the first conductive patterns 64A, for example, as shown in
(49) An electrically isolated first insulation 78A is disposed between the adjacent first conductive patterns 64A.
(50) The first auxiliary pattern 66A contains a plurality of first auxiliary wires 80A having an axis direction parallel to the second oblique direction (arranged along the side of the first large lattice 68A parallel to the first oblique direction), a plurality of first auxiliary wires 80A having an axis direction parallel to the first oblique direction (arranged along the side of the first large lattice 68A parallel to the second oblique direction), and two first L-shaped patterns 82A arranged facing each other. Each of the first L-shaped patterns 82A is formed by combining two first auxiliary wires 80A into an L shape in the first insulation 78A.
(51) The side length of the first large lattice 68A is preferably 3 to 10 mm, more preferably 4 to 6 mm. When the side length is less than the lower limit, for example, in the case of using the first conductive film 10A in a touch panel, the first large lattices 68A exhibit a lowered electrostatic capacitance in the detection process, and the touch panel is likely to cause a detection trouble. On the other hand, when the side length is more than the upper limit, the position detection accuracy may be deteriorated. For the same reasons, the side length of each small lattice 70 in the first large lattices 68A is preferably 100 to 400 m as described above, further preferably 150 to 300 m, most preferably 210 to 250 m. When the side length of the small lattice 70 is within this range, the first conductive film 10A has high transparency and thereby can be suitably used at the front of a display device with excellent visibility.
(52) As shown in
(53) Thus, as shown in
(54) In the example of
(55) On the other hand, as shown in
(56) The second conductive pattern 64B has two or more small lattices 70. In the example of
(57) Also the second conductive pattern 64B is not limited to the example using the second large lattices 68B. For example, the second conductive pattern 64B may be such that a large number of the small lattices 70 are arranged to form a strip-shaped mesh pattern, and a plurality of the strip-shaped mesh patterns are arranged in parallel and are isolated from each other by insulations. For example, two or more of strip-shaped second conductive patterns 64B may each extend from a terminal in the n direction and may be arranged in the m direction.
(58) The size of the second large lattice 68B will be described below with reference to
(59) Furthermore, among the four sides (the fifth to eighth sides 69e to 69h) of the second large lattice 68B, the fifth side 69e and the eighth side 69h are arranged adjacent to each other in the vertical direction, and the intersection of the fifth side 69e and the eighth side 69h corresponds to a seventh corner 71g. Similarly, the sixth side 69f and the seventh side 69g are arranged adjacent to each other in the vertical direction, and the intersection of the sixth side 69f and the seventh side 69g corresponds to an eighth corner 71h.
(60) The second direction length of the second large lattice 68B corresponds to a distance Lvb between the fifth corner 71e and the sixth corner 71f in the vertical direction (the n direction), and the first direction length of the second large lattice 68B corresponds to a distance Lhb between the seventh corner 71g and the eighth corner 71h in the horizontal direction (the m direction).
(61) In this case, the size, i.e. the aspect ratio (Lvb/Lhb), of the second large lattice 68B satisfies the condition of 0.57<Lvb/Lhb<1.74.
(62) In a case where the horizontal direction (the m direction) is equal to the pixel arrangement direction of the display device 30 (see
(63) Incidentally, in the second large lattice 68B, the first oblique direction (the x direction) is parallel to the fifth side 69e (and the seventh side 69g), and the second oblique direction (the y direction) is parallel to the sixth side 69f (and the eighth side 69h).
(64) In the case of using the second large lattices 68B in the second conductive patterns 64B, for example, as shown in
(65) An electrically isolated second insulation 78B is disposed between the adjacent second conductive patterns 64B.
(66) The second auxiliary pattern 66B contains a plurality of second auxiliary wires 80B having an axis direction parallel to the second oblique direction (arranged along the side of the second large lattice 68B parallel to the first oblique direction), a plurality of second auxiliary wires 80B having an axis direction parallel to the first oblique direction (arranged along the side of the second large lattice 68B parallel to the second oblique direction), and two second L-shaped patterns 82B arranged facing each other. Each of the second L-shaped patterns 82B is formed by combining two second auxiliary wires 80B into an L shape in the second insulation 78B.
(67) As shown in
(68) Thus, as shown in
(69) As shown in
(70) For example, each odd-numbered second conductive pattern 64B is connected to the corresponding odd-numbered second wire connection 84b, and each even-numbered second conductive pattern 64B is connected to the corresponding even-numbered second wire connection 84b. The second terminal wiring patterns 86b are drawn from the odd-numbered and even-numbered second wire connections 84b to the center of one long side of the second conductive film 10B, and are each electrically connected to the corresponding second terminals 88b.
(71) The first terminal wiring patterns 86a may be arranged in the same manner as the above second terminal wiring patterns 86b, and the second terminal wiring patterns 86b may be arranged in the same manner as the above first terminal wiring patterns 86a.
(72) The side length of the second large lattice 68B is preferably 3 to 10 mm, more preferably 4 to 6 mm, as with the first large lattice 68A. When the side length is less than the lower limit, the second large lattices 68B are likely to exhibit a lowered electrostatic capacitance to cause a detection trouble in the detection process. On the other hand, when the side length is more than the upper limit, the position detection accuracy may be deteriorated. For the same reasons, the side length of each small lattice 70 in the second large lattices 68B is preferably 100 to 400 m, further preferably 150 to 300 m, most preferably 210 to 250 m. When the side length of the small lattice 70 is within this range, the second conductive film 10B has high transparency and thereby can be suitably used with excellent visibility on the display panel 58 of the display device 30.
(73) The line width of each of the first auxiliary patterns 66A (the first auxiliary wires 80A) and the second auxiliary patterns 66B (the second auxiliary wires 80B) is 30 m or less, and may be equal to or different from those of the first conductive patterns 64A and the second conductive patterns 64B. It is preferred that the first conductive patterns 64A, the second conductive patterns 64B, the first auxiliary patterns 66A, and the second auxiliary patterns 66B have the same line width.
(74) For example, as shown in
(75) As shown in
(76) When the conductive film stack 54 is disposed on the display panel 58 of the display device 30, for example, as shown in
(77) When the conductive film stack 54 is used in the touch panel, the protective layer 56 is formed on the first conductive film 10A, and the first terminal wiring patterns 86a extending from the first conductive patterns 64A in the first conductive film 10A and the second terminal wiring patterns 86b extending from the second conductive patterns 64B in the second conductive film 10B are connected to a scan control circuit or the like.
(78) A self or mutual capacitance technology can be preferably used for detecting a touch position. In the self capacitance technology, a voltage signal for the touch position detection is sequentially supplied to the first conductive patterns 64A, and further a voltage signal for the touch position detection is sequentially supplied to the second conductive patterns 64B. When a finger comes into contact with or close to the upper surface of the protective layer 56, the capacitance between the first conductive pattern 64A and the second conductive pattern 64B in the touch position and the GND (ground) is increased, whereby signals from this first conductive pattern 64A and this second conductive pattern 64B have waveforms different from those of signals from the other conductive patterns. Thus, the touch position is calculated by a control circuit based on the signals transmitted from the first conductive pattern 64A and the second conductive pattern 64B. On the other hand, in the mutual capacitance technology, for example, a voltage signal for the touch position detection is sequentially supplied to the first conductive patterns 64A, and the second conductive patterns 64B are sequentially subjected to sensing (transmitted signal detection). When a finger comes into contact with or close to the upper surface of the protective layer 56, the parallel stray capacitance of the finger is added to the parasitic capacitance between the first conductive pattern 64A and the second conductive pattern 64B in the touch position, whereby a signal from this second conductive pattern 64B has a waveform different from those of signals from the other second conductive patterns 64B. Thus, the touch position is calculated by a control circuit based on the order of the first conductive pattern 64A supplied with the voltage signal and the signal transmitted from the second conductive pattern 64B. Even when two fingers come into contact with or close to the upper surface of the protective layer 56 simultaneously, the touch positions can be detected by using the self or mutual capacitance technology. Conventional related detection circuits used in projected capacitive technologies are described in U.S. Pat. Nos. 4,582,955, 4,686,332, 4,733,222, 5,374,787, 5,543,588, and 7,030,860, US Patent Application Publication No. 2004/0155871, etc.
(79) A second embodiment will be described below with reference to
(80) As shown in
(81) In the second embodiment, as well as in the first embodiment, as shown in
(82) The first conductive pattern 116A contains two or more first large lattices 118A (first sensing portions). The first large lattices 118A are connected in series in the horizontal direction (the m direction), and each contain a combination of two or more small lattices 70. The above first auxiliary pattern 120A is formed around a side of the first large lattice 118A and is not connected to the first large lattice 118A.
(83) The first large lattice 118A has a substantially rhombic shape, which has first staircase patterns 124A containing one or more steps 122 on the oblique sides. The height of the step 122 is equal to the integral multiple of the height of the small lattice 70. In the example of
(84) As described above, the first large lattice 118A has the substantially rhombic shape. More specifically, the first large lattice 118A has an abacus bead shape, which is provided by removing several small lattices 70 in the horizontally extending corners. Thus, r small lattices 70 (in which r is an integer of more than 1) are arranged in the vertical direction to form a first upper base 126A on each of the two horizontally extending corners, and one small lattice 70 is positioned to form the vertex angle on each of the vertically extending corners. In
(85) In this case, when the aspect ratio of the largest rhombus enclosable in the first large lattice 118A (i.e. the largest rhombus formed between the two first upper bases 126A on the horizontally extending corners) is considered as the aspect ratio (Lva/Lha) of the first large lattice 118A for convenience, the aspect ratio (Lva/Lha) satisfies the condition of 0.57<Lva/Lha<1.74.
(86) In a case where the horizontal direction (the m direction) is equal to the pixel arrangement direction of the display device 30 (see
(87) A first absent portion 128A (a portion provided by removing one side from the small lattice 70) is formed between the first upper base 126A on the horizontally extending corner and the oblique side of the first large lattice 118A extending along the first oblique direction (the x direction).
(88) As shown in
(89) The first absent portion 128A (the portion provided by removing one side from the small lattice 70) is formed between the first medium lattice 136A and the first large lattice 118A.
(90) First disconnection portions 138A are disposed between the adjacent first conductive patterns 116A arranged in the vertical direction, and each adjacent two of the first large lattices 118A are isolated from each other by the first disconnection portion 138A.
(91) The above first auxiliary pattern 120A is formed around the side of the first large lattice 118A in the first conductive part 114A, and is not connected to the first large lattice 118A. The first auxiliary pattern 120A contains a plurality of first auxiliary wires 130A (having an axis direction parallel to the second oblique direction) arranged along the first staircase pattern 124A on the oblique side of the first large lattice 118A parallel to the first oblique direction, a plurality of first auxiliary wires 130A (having an axis direction parallel to the first oblique direction) arranged along the first staircase pattern 124A on the oblique side of the first large lattice 118A parallel to the second oblique direction, and a first L-shaped pattern 131A formed by combining two first auxiliary wires 130A into an L shape.
(92) The axis-direction length of each first auxiliary wire 130A is of the inside side length of the small lattice 70. The first auxiliary wire 130A is positioned at a predetermined distance from the first large lattice 118A. The predetermined distance is equal to of the inside side length of the small lattice 70 in this example.
(93) The first L-shaped pattern 131A is formed in the vicinity of the step 122 of the first staircase pattern 124A by combining the first auxiliary wire 130A having the axis direction parallel to the first oblique direction and the first auxiliary wire 130A having the axis direction parallel to the second oblique direction. The first L-shaped pattern 131A faces a corner of the step 122 or positioned in the first disconnection portion 138A between the first large lattices 118A. As shown in
(94) The side length of each small lattice 70 in the first large lattices 118A is preferably 50 m or more, more preferably 100 to 400 m, further preferably 150 to 300 m, most preferably 210 to 250 m. When the side length of the small lattice 70 is within this range, the first conductive film 110A has high transparency and thereby can be suitably used at the front of a display device with excellent visibility.
(95) As shown in
(96) On the other hand, as shown in
(97) The second conductive pattern 116B contains two or more second large lattices 118B (second sensing portions). The second large lattices 118B are connected in series in the vertical direction (the n direction), and each contain a combination of two or more small lattices 70. The above second auxiliary pattern 120B is formed around a side of the second large lattice 118B and is not connected to the second large lattice 118B.
(98) The second large lattice 118B has a substantially rhombic shape, which has second staircase patterns 124B containing one or more steps 122 on the oblique sides. The height of the step 122 is equal to the integral multiple of the height of the small lattice 70. In the example of
(99) As described above, the second large lattice 118B has the substantially rhombic shape. More specifically, the second large lattice 118B has an abacus bead shape, which is provided by removing several small lattices 70 in the vertically extending corners. Thus, r small lattices 70 (in which r is an integer of more than 1) are arranged in the horizontal direction to form a second upper base 126B on each of the two vertically extending corners, and one small lattice 70 is positioned to form the vertex angle on each of the horizontally extending corners. In
(100) In this case, when the aspect ratio of the largest rhombus enclosable in the second large lattice 118B (i.e. the largest rhombus formed between the two horizontally extending corners) is considered as the aspect ratio (Lva/Lha) of the second large lattice 118B for convenience, the aspect ratio (Lva/Lha) satisfies the condition of 0.57<Lva/Lha<1.74.
(101) In a case where the horizontal direction (the m direction) is equal to the pixel arrangement direction of the display device 30 (see
(102) A second absent portion 128B (a portion provided by removing one side from the small lattice 70) is formed between the second upper base 126B on the vertically extending corner and the oblique side of the second large lattice 118B extending along the second oblique direction.
(103) As shown in
(104) The second absent portion 128B (the portion provided by removing one side from the small lattice 70) is formed between the second medium lattice 136B and the second large lattice 118B.
(105) Second disconnection portions 138B are disposed between the adjacent second conductive patterns 116B arranged in the horizontal direction, and each adjacent two of the second large lattices 118B are isolated from each other by the second disconnection portion 138B.
(106) The above-mentioned second auxiliary pattern 120B is formed around the side of the second large lattice 118B in the second conductive part 114B, and is not connected to the second large lattice 118B. The second auxiliary pattern 120B contains a plurality of second auxiliary wires 130B (having an axis direction parallel to the first oblique direction) arranged along the second staircase pattern 124B on the oblique side of the second large lattice 118B parallel to the second oblique direction, a plurality of second auxiliary wires 130B (having an axis direction parallel to the second oblique direction) arranged along the second staircase pattern 124B on the oblique side of the second large lattice 118B parallel to the first oblique direction, and a second L-shaped pattern 131B formed by combining two second auxiliary wires 130B into an L shape.
(107) The axis-direction length of each second auxiliary wire 130B is of the inside side length of the small lattice 70, in the same manner as the first auxiliary wire 130A. The second auxiliary wire 130B is positioned at a predetermined distance from the second large lattice 118B. Also the predetermined distance is equal to of the inside side length of the small lattice 70 in the same manner as the first auxiliary wire 130A described above.
(108) The second L-shaped pattern 131B is formed in the vicinity of the step 122 of the second staircase pattern 124B by combining the second auxiliary wire 130B having the axis direction parallel to the first oblique direction and the second auxiliary wire 130B having the axis direction parallel to the second oblique direction. The second L-shaped pattern 131B faces a corner of the step 122 or positioned in the second disconnection portion 138B between the second large lattices 118B. As shown in
(109) The side length of each small lattice 70 in the second large lattices 118B is preferably 50 m or more, more preferably 100 to 400 m, further preferably 150 to 300 m, most preferably 210 to 250 m. When the side length of the small lattice 70 is within this range, the second conductive film 110B has high transparency and thereby can be suitably used at the front of a display device with excellent visibility.
(110) As shown in
(111) The lower limit of the line width of each of the first conductive patterns 116A (the first large lattices 118A and the first connections 132A) and the second conductive patterns 116B (the second large lattices 118B and the second connections 132B) is preferably 1 m or more, 3 m or more, 4 m or more, or 5 m or more, and the upper limit is preferably 15 m or less, 10 m or less, 9 m or less, or 8 m or less. When the line width is less than the lower limit, the conductive film has an insufficient conductivity, whereby a touch panel using the film has an insufficient detection sensitivity. On the other hand, when the line width is more than the upper limit, moire is significantly generated due to the thin metal wire 16, and a touch panel using the film has a poor visibility. When the line width is within the above range, the moire of the conductive patterns composed of the thin metal wires 16 is improved, and the visibility is remarkably improved. It is preferred that at least the first transparent substrate 112A has a thickness of 75 to 350 m. The thickness is further preferably 80 to 250 m, particularly preferably 100 to 200 m.
(112) The lower limit of the line width of each of the first auxiliary patterns 120A (the first auxiliary wires 130A) and the second auxiliary patterns 120B (the second auxiliary wires 130B) is preferably 1 m or more, 3 m or more, 4 m or more, or 5 m or more, and the upper limit is preferably 15 m or less, 10 m or less, 9 m or less, or 8 m or less. This line width may be equal to or different from that of the first conductive pattern 116A or the second conductive pattern 116B. Incidentally, it is preferred that the first conductive pattern 116A, the second conductive pattern 116B, the first auxiliary pattern 120A, and the second auxiliary pattern 120B have the same line width.
(113) For example, as shown in
(114) As shown in
(115) In this case, the first connections 132A and the second connections 132B overlap with each other. Thus, the first medium lattices 134A and the second medium lattices 134B overlap with each other, and the first medium lattices 136A and the second medium lattices 136B overlap with each other, to form combined patterns 140 having a substantially rectangular shape. In the combined pattern 140, the first medium lattice 134A and the second medium lattice 134B are located on a diagonal line. In the combined pattern 140 formed by the first connection 132A and the second connection 132B shown in
(116) Furthermore, the first auxiliary patterns 120A and the second auxiliary patterns 120B overlap with each other to form combined patterns 142 between the first large lattices 118A and the second large lattices 118B. In the same manner as the example of the first embodiment shown in
(117) Therefore, the combined patterns 140 and 142 each contain a combination of two or more small lattices 70 (mesh shapes). Consequently, as shown in
(118) In this embodiment, the first and second staircase patterns 124A and 124B having the steps 122 are arranged in the above manner, whereby the boundaries between the first large lattices 118A and the second large lattices 118B are made further less visible to improve the visibility.
(119) When the conductive film stack 104 is used in the touch panel, the protective layer 56 is formed on the first conductive film 110A, and the first terminal wiring patterns 86a extending from the first conductive patterns 116A in the first conductive film 110A and the second terminal wiring patterns 86b extending from the second conductive patterns 116B in the second conductive film 110B are connected to a scan control circuit or the like.
(120) The above conductive film stacks 54 and 104 of the first and second embodiments have the structures shown in
(121) As shown in
(122) Though the first conductive films 10A and 110A and the second conductive films 10B and 110B are used in the projected capacitive touch panel 50 in the above embodiments, they can be used in a surface capacitive touch panel or a resistive touch panel.
(123) Though the conductive films 10 and 110 are used as the electromagnetic-shielding film or the conductive touch panel film in the above embodiments, they can be used also as another optical film for the display panel 58 of the display device 30. In this case, the whole surface of the display panel 58 may be covered with the mesh pattern of the conductive film. The whole surface of the display panel 58 may be covered with the mesh pattern 20 of the conductive film 10 or 110, and only a part (such as a corner or a center portion) of the display screen 58a may be covered with the mesh pattern 20 of the conductive film 10 or 110.
(124) A method for producing the conductive film 10 or 110 according to the first embodiment will be described below. It is to be understood that this method can be used also in the second embodiment.
(125) The conductive film 10 may be produced as follows. For example, a photosensitive material having the transparent substrate 12 and thereon a photosensitive silver halide-containing emulsion layer may be exposed and developed, whereby metallic silver portions and light-transmitting portions may be formed in the exposed areas and the unexposed areas respectively to obtain the mesh pattern 20. The metallic silver portions may be subjected to a physical development treatment and/or a plating treatment to deposit a conductive metal thereon.
(126) Alternatively, a photosensitive plating base layer of a pre-plating treatment material may be formed on the first transparent substrate 12A and the second transparent substrate 12B. The resultant may be exposed and developed, and may be subjected to a plating treatment, whereby metal portions and light-transmitting portions may be formed in the exposed areas and the unexposed areas respectively to form the first conductive patterns 64A and the second conductive patterns 64B. The metal portions may be further subjected to a physical development treatment and/or a plating treatment to deposit a conductive metal thereon.
(127) The following two processes can be preferably used in the method using the pre-plating treatment material. The processes are disclosed more specifically in Japanese Laid-Open Patent Publication Nos. 2003-213437, 2006-064923, 2006-058797, and 2006-135271, etc.
(128) (a) A process comprising applying, to a transparent substrate, a plating base layer having a functional group interactable with a plating catalyst or a precursor thereof, exposing and developing the layer, and subjecting the developed layer to a plating treatment to form a metal portion on the plating base material.
(129) (b) A process comprising applying, to a transparent substrate, an underlayer containing a polymer and a metal oxide and a plating base layer having a functional group interactable with a plating catalyst or a precursor thereof in this order, exposing and developing the layers, and subjecting the developed layers to a plating treatment to form a metal portion on the plating base material.
(130) Alternatively, a photoresist film on a copper foil disposed on the transparent substrate 12 may be exposed and developed to form a resist pattern, and the copper foil exposed from the resist pattern may be etched to form the mesh pattern 20.
(131) A paste containing fine metal particles may be printed on the transparent substrate 12, and the printed paste may be plated with a metal to form the mesh pattern 20.
(132) The mesh pattern 20 may be printed on the transparent substrate 12 by using a screen or gravure printing plate.
(133) The mesh pattern 20 may be formed on the transparent substrate 12 by using an inkjet method.
(134) A particularly preferred method, which contains using a photographic photosensitive silver halide material for producing the conductive film 10 according to this embodiment, will be mainly described below.
(135) The method for producing the conductive film 10 of this embodiment includes the following three processes different in the photosensitive materials and development treatments.
(136) (1) A process comprising subjecting a photosensitive black-and-white silver halide material free of physical development nuclei to a chemical or thermal development to form the metallic silver portions on the photosensitive material.
(137) (2) A process comprising subjecting a photosensitive black-and-white silver halide material having a silver halide emulsion layer containing physical development nuclei to a solution physical development to form the metallic silver portions on the photosensitive material.
(138) (3) A process comprising subjecting a stack of a photosensitive black-and-white silver halide material free of physical development nuclei and an image-receiving sheet having a non-photosensitive layer containing physical development nuclei to a diffusion transfer development to form the metallic silver portions on the non-photosensitive image-receiving sheet.
(139) In the process of (1), an integral black-and-white development procedure is used to form a transmittable conductive film such as a light-transmitting conductive film on the photosensitive material. The resulting silver is a chemically or thermally developed silver containing a filament having a high-specific surface area, and thereby shows a high activity in the following plating or physical development treatment.
(140) In the process of (2), the silver halide particles are melted around and deposited on the physical development nuclei in the exposed areas to form a transmittable conductive film such as a light-transmitting conductive film on the photosensitive material. Also in this process, an integral black-and-white development procedure is used. Though high activity can be achieved since the silver halide is deposited on the physical development nuclei in the development, the developed silver has a spherical shape with small specific surface.
(141) In the process of (3), the silver halide particles are melted in the unexposed areas, and are diffused and deposited on the development nuclei of the image-receiving sheet, to form a transmittable conductive film such as a light-transmitting conductive film on the sheet. In this process, a so-called separate-type procedure is used, the image-receiving sheet being peeled off from the photosensitive material.
(142) A negative or reversal development treatment can be used in the processes. In the diffusion transfer development, the negative development treatment can be carried out using an auto-positive photosensitive material.
(143) The chemical development, thermal development, solution physical development, and diffusion transfer development have the meanings generally known in the art, and are explained in common photographic chemistry texts such as Shin-ichi Kikuchi, Shashin Kagaku (Photographic Chemistry), Kyoritsu Shuppan Co., Ltd., 1955 and C. E. K. Mees, The Theory of Photographic Processes, 4th ed., Mcmillan, 1977. A liquid treatment is generally used in the present invention, and also a thermal development treatment can be utilized. For example, techniques described in Japanese Laid-Open Patent Publication Nos. 2004-184693, 2004-334077, and 2005-010752 and Japanese Patent Application Nos. 2004-244080 and 2004-085655 can be used in the present invention.
(144) The structure of each layer in the conductive film 10 of this embodiment will be described in detail below.
(145) [Transparent Substrate 12]
(146) The transparent substrate 12 may be a plastic film, a plastic plate, a glass plate, etc.
(147) Examples of materials for the plastic film and the plastic plate include polyesters such as polyethylene terephthalates (PET) and polyethylene naphthalates (PEN), and triacetyl celluloses (TAC).
(148) The transparent substrate 12 is preferably a film or plate of a plastic having a melting point of about 290 C. or lower. The PET is particularly preferred from the viewpoints of light transmittance, workability, etc.
(149) [Silver Salt Emulsion Layer]
(150) The silver salt emulsion layer to be converted to the thin metal wire 16 of the conductive film 10 contains a silver salt and a binder, and may further contain a solvent and an additive such as a dye.
(151) The silver salt used in this embodiment may be an inorganic silver salt such as a silver halide or an organic silver salt such as silver acetate. In this embodiment, the silver halide is preferred because of its excellent light sensing property.
(152) The applied silver amount (the amount of the applied silver salt in the silver density) of the silver salt emulsion layer is preferably 1 to 30 g/m.sup.2, more preferably 1 to 25 g/m.sup.2, further preferably 5 to 20 g/m.sup.2. When the applied silver amount is within this range, the resultant conductive film 10 can exhibit a desired surface resistance.
(153) Examples of the binders used in this embodiment include gelatins, polyvinyl alcohols (PVA), polyvinyl pyrolidones (PVP), polysaccharides such as starches, celluloses and derivatives thereof, polyethylene oxides, polyvinylamines, chitosans, polylysines, polyacrylic acids, polyalginic acids, polyhyaluronic acids, and carboxycelluloses. The binders show a neutral, anionic, or cationic property depending on the ionicity of a functional group.
(154) In this embodiment, the amount of the binder in the silver salt emulsion layer is not particularly limited, and may be appropriately selected to obtain sufficient dispersion and adhesion properties. The volume ratio of silver/binder in the silver salt emulsion layer is preferably 1/4 or more, more preferably 1/2 or more. The silver/binder volume ratio is preferably 100/1 or less, more preferably 50/1 or less. Particularly, the silver/binder volume ratio is further preferably 1/1 to 4/1, most preferably 1/1 to 3/1. When the silver/binder volume ratio of the silver salt emulsion layer is within the range, the resistance variation can be reduced even under various applied silver amount, whereby the conductive film 10 can be produced with a uniform surface resistance. The silver/binder volume ratio can be obtained by converting the silver halide/binder weight ratio of the material to the silver/binder weight ratio, and by further converting the silver/binder weight ratio to the silver/binder volume ratio.
(155) <Solvent>
(156) The solvent used for forming the silver salt emulsion layer is not particularly limited, and examples thereof include water, organic solvents (e.g. alcohols such as methanol, ketones such as acetone, amides such as formamide, sulfoxides such as dimethyl sulfoxide, esters such as ethyl acetate, ethers), ionic liquids, and mixtures thereof.
(157) <Other Additives>
(158) The additives used in this embodiment are not particularly limited, and may be preferably selected from known additives.
(159) [Other Layers]
(160) A protective layer (not shown) may be formed on the silver salt emulsion layer. In addition, an undercoat layer or the like may be formed below the silver salt emulsion layer.
(161) The steps for producing the conductive film 10 will be described below.
(162) [Exposure]
(163) In this embodiment, the conductive part 14 may be formed in a printing process, and may be formed by exposure and development treatments, etc. in another process. Thus, a photosensitive material having the transparent substrate 12 and thereon the silver salt-containing layer or a photosensitive material coated with a photopolymer for photolithography is subjected to the exposure treatment. An electromagnetic wave may be used in the exposure. For example, the electromagnetic wave may be a light such as a visible light or an ultraviolet light, or a radiation such as an X-ray. The exposure may be carried out using a light source having a wavelength distribution or a specific wavelength.
(164) [Development Treatment]
(165) In this embodiment, the emulsion layer is subjected to the development treatment after the exposure. Common development treatment technologies for photographic silver salt films, photographic papers, print engraving films, emulsion masks for photomasking, and the like may be used in the present invention.
(166) In the present invention, the development process may include a fixation treatment for removing the silver salt in the unexposed areas to stabilize the material. Fixation treatment technologies for photographic silver salt films, photographic papers, print engraving films, emulsion masks for photomasking, and the like may be used in the present invention.
(167) The developed and fixed photosensitive material is preferably subjected to a water washing treatment or a stabilization treatment.
(168) The ratio of the metallic silver contained in the exposed areas after the development to the silver contained in the areas before the exposure is preferably 50% or more, more preferably 80% or more, by mass. When the ratio is 50% or more by mass, a high conductivity can be achieved.
(169) The conductive film 10 is obtained by the above steps. The surface resistance of the resultant conductive film 10 is preferably within the range of 0.1 to 300 ohm/sq. Preferred surface resistance ranges of the conductive film 10 depend on the use of the conductive film 10. In the case of using the conductive film 10 in the electromagnetic-shielding film, the surface resistance is preferably 10 ohm/sq or less, more preferably 0.1 to 3 ohm/sq. In the case of using the conductive film 10 in the touch panel, the surface resistance is preferably 1 to 70 ohm/sq, more preferably 5 to 50 ohm/sq, further preferably 5 to 30 ohm/sq. The conductive film 10 may be subjected to a calender treatment after the development treatment to obtain a desired surface resistance.
(170) [Physical Development Treatment and Plating Treatment]
(171) In this embodiment, to increase the conductivity of the metallic silver portion formed by the above exposure and development treatments, conductive metal particles may be deposited on the metallic silver portion by a physical development treatment and/or a plating treatment. In the present invention, the conductive metal particles may be deposited on the metallic silver portion by only one of the physical development and plating treatments or by the combination of the treatments. The metallic silver portion, subjected to the physical development treatment and/or the plating treatment in this manner, is also referred to as the conductive metal portion.
(172) In this embodiment, the physical development is such a process that metal ions such as silver ions are reduced by a reducing agent, whereby metal particles are deposited on a metal or metal compound core. Such physical development has been used in the fields of instant B & W film, instant slide film, printing plate production, etc., and the technologies can be used in the present invention. The physical development may be carried out at the same time as the above development treatment after the exposure, and may be carried out after the development treatment separately.
(173) In this embodiment, the plating treatment may contain electroless plating (such as chemical reduction plating or displacement plating), electrolytic plating, or a combination thereof. Known electroless plating technologies for printed circuit boards, etc. may be used in this embodiment. The electroless plating is preferably electroless copper plating.
(174) [Oxidation Treatment]
(175) In this embodiment, the metallic silver portion formed by the development treatment or the conductive metal portion formed by the physical development treatment and/or the plating treatment is preferably subjected to an oxidation treatment. For example, by the oxidation treatment, a small amount of a metal deposited on the light-transmitting portion can be removed, so that the transmittance of the light-transmitting portion can be increased to approximately 100%.
(176) [Conductive Metal Portion]
(177) In this embodiment, the line width of the conductive metal portion (the thin metal wire 16) may be 30 m or less. The lower limit of the line width is preferably 0.1 m or more, 1 m or more, 3 m or more, 4 m or more, or 5 m or more, and the upper limit thereof is preferably 30 m or less, 15 m or less, 10 m or less, 9 m or less, or 8 m or less. When the line width is less than the lower limit, the conductive metal portion has an insufficient conductivity, whereby the touch panel 50 using the conductive metal portion has an insufficient detection sensitivity. On the other hand, when the line width is more than the upper limit, moire is significantly generated due to the conductive metal portion, and the touch panel 50 using the conductive metal portion has a poor visibility. When the line width is within the above range, the moire of the conductive metal portion is improved, and the visibility is remarkably improved. The side length of the small lattice 70 is preferably 100 to 400 m, further preferably 150 to 300 m, most preferably 210 to 250 m. The conductive metal portion may have a part with a line width of more than 200 m for the purpose of ground connection, etc.
(178) In this embodiment, the opening ratio of the conductive metal portion is preferably 85% or more, more preferably 90% or more, most preferably 95% or more, in view of the visible light transmittance. The opening ratio is the ratio of the light-transmitting portions other than the thin metal wires 16 to the entire conductive part. For example, a rhombic shape having a line width of 6 m and a side length of 240 m has an opening ratio of 95%.
(179) [Light-Transmitting Portion]
(180) In this embodiment, the light-transmitting portion is a portion having light transmittance, other than the conductive metal portions in the conductive film 10. The transmittance of the light-transmitting portion, which is herein a minimum transmittance value in a wavelength region of 380 to 780 nm obtained neglecting the light absorption and reflection of the transparent substrate 12, is 90% or more, preferably 95% or more, more preferably 97% or more, further preferably 98% or more, most preferably 99% or more.
(181) The exposure is preferably carried out using a glass mask method or a laser lithography pattern exposure method.
(182) [Conductive Film 10]
(183) In the conductive film 10 of this embodiment, the thickness of the transparent substrate 12 is preferably 5 to 350 m, more preferably 30 to 150 m. When the thickness is 5 to 350 m, a desired visible light transmittance can be obtained, and the transparent substrate 12 can be easily handled.
(184) The thickness of the metallic silver portion formed on the transparent substrate 12 may be appropriately selected by controlling the thickness of the coating liquid for the silver salt-containing layer applied to the transparent substrate 12. The thickness of the metallic silver portion may be selected within a range of 0.001 to 0.2 mm, and is preferably 30 m or less, more preferably 20 m or less, further preferably 0.01 to 9 m, most preferably 0.05 to 5 m. The metallic silver portion is preferably formed in a patterned shape. The metallic silver portion may have a monolayer structure or a multilayer structure containing two or more layers. When the metallic silver portion has a patterned multilayer structure containing two or more layers, the layers may have different wavelength color sensitivities. In this case, different patterns can be formed in the layers by using exposure lights with different wavelengths.
(185) In the case of using the conductive metal portion in the touch panel 50, the conductive metal portion preferably has a smaller thickness. As the thickness is reduced, the viewing angle and visibility of the display panel 58 are improved. Thus, the thickness of the layer of the conductive metal on the conductive metal portion is preferably less than 9 m, more preferably 0.1 m or more but less than 5 m, further preferably 0.1 m or more but less than 3 m.
(186) In this embodiment, the thickness of the metallic silver portion can be controlled by changing the coating thickness of the silver salt-containing layer, and the thickness of the conductive metal particle layer can be controlled in the physical development treatment and/or the plating treatment. Therefore, even the conductive film having a thickness of less than 5 m (preferably less than 3 m) can be easily produced.
(187) The plating or the like is not necessarily carried out in the method for producing the conductive film 10 of this embodiment. This is because the desired surface resistance can be obtained by controlling the applied silver amount and the silver/binder volume ratio of the silver salt emulsion layer in the method. The calender treatment or the like may be carried out if necessary.
(188) (Film Hardening Treatment after Development Treatment)
(189) It is preferred that after the silver salt emulsion layer is developed, the resultant is immersed in a hardener and thus subjected to a film hardening treatment. Examples of the hardeners include boric acid and dialdehydes such as glutaraldehyde, adipaldehyde, and 2,3-dihydroxy-1,4-dioxane, described in Japanese Laid-Open Patent Publication No. 02-141279.
(190) An additional functional layer such as an antireflection layer or a hard coat layer may be formed on the conductive film 10 of this embodiment.
(191) [Calender Treatment]
(192) The developed metallic silver portion may be smoothened by a calender treatment. The conductivity of the metallic silver portion can be significantly increased by the calender treatment. The calender treatment may be carried out using a calender roll unit. The calender roll unit generally has a pair of rolls.
(193) The roll used in the calender treatment may be composed of a metal or a plastic (such as an epoxy, polyimide, polyamide, or polyimide-amide). Particularly in a case where the photosensitive material has the emulsion layer on both sides, it is preferably treated with a pair of the metal rolls. In a case where the photosensitive material has the emulsion layer only on one side, it may be treated with the combination of the metal roll and the plastic roll in view of wrinkling prevention. The upper limit of the line pressure is preferably 1960 N/cm (200 kgf/cm, corresponding to a surface pressure of 699.4 kgf/cm.sup.2) or more, more preferably 2940 N/cm (300 kgf/cm, corresponding to a surface pressure of 935.8 kgf/cm.sup.2) or more. The upper limit of the line pressure is 6880 N/cm (700 kgf/cm) or less.
(194) The smoothing treatment such as the calender treatment is preferably carried out at a temperature of 10 C. (without temperature control) to 100 C. Though the preferred treatment temperature range depends on the density and shape of the metal mesh or metal wiring pattern, the type of the binder, etc., the temperature is more preferably 10 C. (without temperature control) to 50 C. in general.
(195) The present invention may be appropriately combined with technologies described in the following patent publications and international patent pamphlets shown in Tables 1 and 2. Japanese Laid-Open Patent, Publication No., Pamphlet No., etc. are omitted therein.
(196) TABLE-US-00001 TABLE 1 2004-221564 2004-221565 2007-200922 2006-352073 2007-129205 2007-235115 2007-207987 2006-012935 2006-010795 2006-228469 2006-332459 2009-21153 2007-226215 2006-261315 2007-072171 2007-102200 2006-228473 2006-269795 2006-269795 2006-324203 2006-228478 2006-228836 2007-009326 2006-336090 2006-336099 2006-348351 2007-270321 2007-270322 2007-201378 2007-335729 2007-134439 2007-149760 2007-208133 2007-178915 2007-334325 2007-310091 2007-116137 2007-088219 2007-207883 2007-013130 2005-302508 2008-218784 2008-227350 2008-227351 2008-244067 2008-267814 2008-270405 2008-277675 2008-277676 2008-282840 2008-283029 2008-288305 2008-288419 2008-300720 2008-300721 2009-4213 2009-10001 2009-16526 2009-21334 2009-26933 2008-147507 2008-159770 2008-159771 2008-171568 2008-198388 2008-218096 2008-218264 2008-224916 2008-235224 2008-235467 2008-241987 2008-251274 2008-251275 2008-252046 2008-277428
(197) TABLE-US-00002 TABLE 2 2006/001461 2006/088059 2006/098333 2006/098336 2006/098338 2006/098335 2006/098334 2007/001008
EXAMPLES
(198) The present invention will be described more specifically below with reference to Examples. Materials, amounts, ratios, treatment contents, treatment procedures, and the like, used in Examples, may be appropriately changed without departing from the scope of the present invention. The following specific examples are therefore to be considered in all respects as illustrative and not restrictive.
First Example
(199) In First Example, conductive films of Comparative Examples 1 to 6 and Examples 1 to 36 were produced respectively. The opening ratio of each conductive sheet was calculated, and the moire of each conductive sheet was evaluated. The components, calculation results, and evaluation results of Comparative Examples 1 to 6 and Examples 1 to 36 are shown in Tables 3 and 4.
Examples 1 to 36 and Comparative Examples 1 to 6
(200) (Photosensitive Silver Halide Material)
(201) An emulsion containing an aqueous medium, a gelatin, and silver iodobromochloride particles was prepared. The amount of the gelatin was 10.0 g per 150 g of Ag, and the silver iodobromochloride particles had an I content of 0.2 mol %, a Br content of 40 mol %, and an average spherical equivalent diameter of 0.1 m.
(202) K.sub.3Rh.sub.2Br.sub.9 and K.sub.2IrCl.sub.6 were added to the emulsion at a concentration of 10.sup.7 mol/mol-silver to dope the silver bromide particles with Rh and Ir ions. Na.sub.2PdCl.sub.4 was further added to the emulsion, and the resultant emulsion was subjected to gold-sulfur sensitization using chlorauric acid and sodium thiosulfate. The emulsion and a gelatin hardening agent were applied to a transparent substrate composed of a polyethylene terephthalate (PET). The amount of the applied silver was 10 g/m.sup.2, and the Ag/gelatin volume ratio was 2/1.
(203) The PET support had a width of 30 cm, and the emulsion was applied thereto into a width of 25 cm and a length of 20 m. The both end portions having a width of 3 cm were cut off to obtain a roll photosensitive silver halide material having a width of 24 cm.
(204) (Exposure)
(205) An A4 (210 mm297 mm) sized area of the transparent substrate was exposed in the mesh pattern 20 shown in
(206) (Development Treatment)
(207) TABLE-US-00003 Formulation of 1 L of developer Hydroquinone 20 g Sodium sulfite 50 g Potassium carbonate 40 g Ethylenediaminetetraacetic acid 2 g Potassium bromide 3 g Polyethylene glycol 2000 1 g Potassium hydroxide 4 g pH Controlled at 10.3
(208) Formulation of 1 L of Fixer
(209) TABLE-US-00004 Formulation of 1 L of fixer Ammonium thiosulfate solution (75%) 300 ml Ammonium sulfite monohydrate 25 g 1,3-Diaminopropanetetraacetic acid 8 g Acetic acid 5 g Aqueous ammonia (27%) 1 g pH Controlled at 6.2
(210) The exposed photosensitive material was treated with the above treatment agents using an automatic processor FG-710PTS manufactured by FUJIFILM Corporation under the following conditions. A development treatment was carried out at 35 C. for 30 seconds, a fixation treatment was carried out at 34 C. for 23 seconds, and then a water washing treatment was carried out for 20 seconds at a water flow rate of 5 L/min.
Example 1
(211) In the conductive film produced in Example 1, the thin metal wires 16 had an inclination (an angle between the first thin metal wire 16a and the imaginary line 24 extending in the opening 18 in the horizontal direction to connect a plurality of intersection points in the mesh pattern 20) of 30, a thin wire pitch Ps of 200 m, and a line width of 6 m.
Examples 2 to 6
(212) The conductive films of Examples 2, 3, 4, 5, and 6 were produced in the same manner as Example 1 except that the thin metal wires 16 had thin wire pitches Ps of 220, 240, 260, 300, and 400 m respectively.
Example 7
(213) In the conductive film produced in Example 7, the thin metal wires 16 had an inclination of 36, a thin wire pitch Ps of 200 m, and a line width of 6 m.
Examples 8 to 12
(214) The conductive films of Examples 8, 9, 10, 11, and 12 were produced in the same manner as Example 7 except that the thin metal wires 16 had thin wire pitches Ps of 220, 240, 260, 300, and 400 m respectively.
Example 13
(215) In the conductive film produced in Example 13, the thin metal wires 16 had an inclination of 37, a thin wire pitch Ps of 200 m, and a line width of 6 m.
Examples 14 to 18
(216) The conductive films of Examples 14, 15, 16, 17, and 18 were produced in the same manner as Example 13 except that the thin metal wires 16 had thin wire pitches Ps of 220, 240, 260, 300, and 400 m respectively.
Example 19
(217) In the conductive film produced in Example 19, the thin metal wires 16 had an inclination of 39, a thin wire pitch Ps of 200 m, and a line width of 6 m.
Examples 20 to 24
(218) The conductive films of Examples 20, 21, 22, 23, and 24 were produced in the same manner as Example 19 except that the thin metal wires 16 had thin wire pitches Ps of 220, 240, 260, 300, and 400 m respectively.
Example 25
(219) In the conductive film produced in Example 25, the thin metal wires 16 had an inclination of 40, a thin wire pitch Ps of 200 m, and a line width of 6 m.
Examples 26 to 30
(220) The conductive films of Examples 26, 27, 28, 29, and 30 were produced in the same manner as Example 25 except that the thin metal wires 16 had thin wire pitches Ps of 220, 240, 260, 300, and 400 m respectively.
Example 31
(221) In the conductive film produced in Example 31, the thin metal wires 16 had an inclination of 44, a thin wire pitch Ps of 200 m, and a line width of 6 m.
Examples 32 to 36
(222) The conductive films of Examples 32, 33, 34, 35, and 36 were produced in the same manner as Example 31 except that the thin metal wires 16 had thin wire pitches Ps of 220, 240, 260, 300, and 400 m respectively.
Comparative Example 1
(223) In the conductive film produced in Comparative Example 1, the thin metal wires 16 had an inclination of 29, a thin wire pitch Ps of 200 m, and a line width of 6 m.
Comparative Examples 2 and 3
(224) The conductive films of Comparative Examples 2 and 3 were produced in the same manner as Comparative Example 1 except that the thin metal wires 16 had thin wire pitches Ps of 300 and 400 m respectively.
Comparative Example 4
(225) In the conductive film produced in Comparative Example 4, the thin metal wires 16 had an inclination of 45, a thin wire pitch Ps of 200 m, and a line width of 6 m.
Comparative Examples 5 and 6
(226) The conductive films of Comparative Examples 5 and 6 were produced in the same manner as Comparative Example 4 except that the thin metal wires 16 had thin wire pitches Ps of 300 and 400 m respectively.
(227) [Evaluation]
(228) (Calculation of Opening Ratio)
(229) The transmittances of the conductive films of Comparative Examples 1 to 6 and Examples 1 to 36 were measured by a spectrophotometer, and the opening ratios were proportionally calculated to evaluate the transparencies.
(230) (Moire Evaluation)
(231) Each of the conductive films of Comparative Examples 1 to 6 and Examples 1 to 36 was attached to the display panel 58 of the display device 30, the display device 30 was fixed to a turntable, and the display device 30 was operated to display a white color. The moire of the conductive film was visually observed and evaluated while turning the turntable within a bias angle range of 20 to +20. The display device 30 had a horizontal pixel pitch Ph and a vertical pixel pitch Pv of about 192 m. Pavilion Notebook PC dm1a (11.6-inch glossy liquid crystal display, WXGA/1366768) manufactured by Hewlett-Packard Company was used in this evaluation.
(232) The moire was observed at a distance of 0.5 m from the display screen of the display device 30. The conductive film was evaluated as Excellent when the moire was not visible, as Fair when the moire was slightly visible to an acceptable extent, or as Poor when the moire was highly visible. In the overall evaluation, each conductive film was evaluated as A, B, C, or D. A means that the film was evaluated as Excellent in an angular range of 10 or more, B means that the film was evaluated as Excellent in an angular range of less than 10, C means that the film was not evaluated as Excellent at any angle and was evaluated as Poor in an angular range of less than 30, and D means that the film was not evaluated as Excellent at any angle and was evaluated as Poor in an angular range of 30 or more.
(233) TABLE-US-00005 TABLE 3 Thin metal wire Display device Thin wire Line Horizontal Vertical pitch Ps width pixel pitch pixel pitch Opening Moire Inclination (m) (m) Ph (m) Pv (m) Ratio (%) evaluation Comparative 29 200 6 192 192 94 D Example 1 Comparative 29 300 6 192 192 96 D Example 2 Comparative 29 400 6 192 192 97 D Example 3 Example 1 30 200 6 192 192 94 C Example 2 30 220 6 192 192 95 B Example 3 30 240 6 192 192 95 B Example 4 30 260 6 192 192 96 C Example 5 30 300 6 192 192 96 C Example 6 30 400 6 192 192 97 C Example 7 36 200 6 192 192 94 C Example 8 36 220 6 192 192 95 A Example 9 36 240 6 192 192 95 A Example 10 36 260 6 192 192 96 B Example 11 36 300 6 192 192 96 B Example 12 36 400 6 192 192 97 B Example 13 37 200 6 192 192 94 B Example 14 37 220 6 192 192 95 A Example 15 37 240 6 192 192 95 A Example 16 37 260 6 192 192 96 B Example 17 37 300 6 192 192 96 B Example 18 37 400 6 192 192 97 B
(234) TABLE-US-00006 TABLE 4 Thin metal wire Display device Thin wire Line Horizontal Vertical pitch Ps width pixel pitch pixel pitch Opening Moire Inclination (m) (m) Ph (m) Pv (m) Ratio (%) evaluation Example 19 39 200 6 192 192 94 B Example 20 39 220 6 192 192 95 A Example 21 39 240 6 192 192 95 A Example 22 39 260 6 192 192 96 B Example 23 39 300 6 192 192 96 B Example 24 39 400 6 192 192 97 B Example 25 40 200 6 192 192 94 C Example 26 40 220 6 192 192 95 B Example 27 40 240 6 192 192 95 B Example 28 40 260 6 192 192 96 C Example 29 40 300 6 192 192 96 C Example 30 40 400 6 192 192 97 C Example 31 44 200 6 192 192 94 C Example 32 44 220 6 192 192 95 B Example 33 44 240 6 192 192 95 B Example 34 44 260 6 192 192 96 C Example 35 44 300 6 192 192 96 C Example 36 44 400 6 192 192 97 C Comparative 45 200 6 192 192 94 D Example 4 Comparative 45 300 6 192 192 95 D Example 5 Comparative 45 400 6 192 192 95 D Example 6
(235) As shown in Tables 3 and 4, the conductive films of Comparative Examples 1 to 6 were evaluated as D, and had highly visible moire. Of Examples 1 to 36, in Examples 1, 4 to 7, 25, 28 to 31, and 34 to 36, the moire was only slightly visible to an acceptable extent. In the other Examples, Examples 2, 3, 10 to 13, 16 to 19, 22 to 24, 26, 27, 32, and 33 were desirable because the moire was hardly generated. In particular, in Examples 8, 9, 14, 15, 20, and 21, the moire generation was not observed because the thin metal wires 16 had an inclination of 36 to 39 and a thin wire pitch Ps of 220 to 240 m.
(236) Projected capacitive touch panels 50 were produced using the conductive films of Examples 1 to 36 respectively. When the touch panels 50 were operated by a finger touch, they exhibited high response speeds and excellent detection sensitivities. Furthermore, when two or more points were touched, the touch panels 50 exhibited the same excellent properties. Thus, it was confirmed that the touch panels 50 were capable of multi-touch detection.
Second Example
(237) In Second Example, conductive film stacks 54 of Comparative Examples 11 to 16 and Examples 41 to 100 were produced respectively. The opening ratio of each conductive film stack 54 was calculated, and the moire of each conductive film stack 54 was evaluated. The components, calculation results, and evaluation results of Comparative Examples 11 to 16 and Examples 41 to 100 are shown in Tables 5 and 6.
Examples 41 to 100 and Comparative Examples 11 to 16
(238) (Photosensitive Silver Halide Material)
(239) A roll photosensitive silver halide material was prepared in the same manner as First Example.
(240) (Exposure)
(241) An A4 (210 mm297 mm) sized area of the first transparent substrate 12A was exposed in the pattern of the first conductive film 10A shown in
(242) (Development Treatment)
(243) The exposed photosensitive material was treated with the above treatment agents of First Example using an automatic processor FG-710PTS manufactured by FUJIFILM Corporation under the following conditions. A development treatment was carried out at 35 C. for 30 seconds, a fixation treatment was carried out at 34 C. for 23 seconds, and then a water washing treatment was carried out for 20 seconds at a water flow rate of 5 L/min.
Example 41
(244) In the conductive film stack produced in Example 41, the small lattices 70 in the first conductive part 14A of the first conductive film 10A and the second conductive part 14B of the second conductive film 10B had an angle of 30 between the first side 70a (see
Examples 42 to 44
(245) The conductive film stacks of Examples 42, 43, and 44 were produced in the same manner as Example 41 except that the small lattices 70 had side lengths of 220, 240, and 400 m respectively.
Example 45
(246) In the conductive film stack produced in Example 45, the small lattices 70 had an angle of 32 between the first side 70a and the first direction, a side length of 200 m, and a line width of 6 m.
Examples 46 to 48
(247) The conductive film stacks of Examples 46, 47, and 48 were produced in the same manner as Example 45 except that the small lattices 70 had side lengths of 220, 240, and 400 m respectively.
Example 49
(248) In the conductive film stack produced in Example 49, the small lattices 70 had an angle of 36 between the first side 70a and the first direction, a side length of 200 m, and a line width of 6 m.
Examples 50 to 52
(249) The conductive film stacks of Examples 50, 51, and 52 were produced in the same manner as Example 49 except that the small lattices 70 had side lengths of 220, 240, and 400 m respectively.
Example 53
(250) In the conductive film stack produced in Example 53, the small lattices 70 had an angle of 37 between the first side 70a and the first direction, a side length of 200 m, and a line width of 6 m.
Examples 54 to 56
(251) The conductive film stacks of Examples 54, 55, and 56 were produced in the same manner as Example 53 except that the small lattices 70 had side lengths of 220, 240, and 400 m respectively.
Example 57
(252) In the conductive film stack produced in Example 57, the small lattices 70 had an angle of 39 between the first side 70a and the first direction, a side length of 200 m, and a line width of 6 m.
Examples 58 to 60
(253) The conductive film stacks of Examples 58, 59, and 60 were produced in the same manner as Example 57 except that the small lattices 70 had side lengths of 220, 240, and 400 m respectively.
Example 61
(254) In the conductive film stack produced in Example 61, the small lattices 70 had an angle of 40 between the first side 70a and the first direction, a side length of 200 m, and a line width of 6 m.
Examples 62 to 64
(255) The conductive film stacks of Examples 62, 63, and 64 were produced in the same manner as Example 61 except that the small lattices 70 had side lengths of 220, 240, and 400 m respectively.
Example 65
(256) In the conductive film stack produced in Example 65, the small lattices 70 had an angle of 44 between the first side 70a and the first direction, a side length of 200 m, and a line width of 6 m.
Examples 66 to 68
(257) The conductive film stacks of Examples 66, 67, and 68 were produced in the same manner as Example 65 except that the small lattices 70 had side lengths of 220, 240, and 400 m respectively.
Example 69
(258) In the conductive film stack produced in Example 69, the small lattices 70 had an angle of 45 between the first side 70a and the first direction, a side length of 200 m, and a line width of 6 m.
Examples 70 to 72
(259) The conductive film stacks of Examples 70, 71, and 72 were produced in the same manner as Example 69 except that the small lattices 70 had side lengths of 220, 240, and 400 m respectively.
Example 73
(260) In the conductive film stack produced in Example 73, the small lattices 70 had an angle of 46 between the first side 70a and the first direction, a side length of 200 m, and a line width of 6 m.
Examples 74 to 76
(261) The conductive film stacks of Examples 74, 75, and 76 were produced in the same manner as Example 73 except that the small lattices 70 had side lengths of 220, 240, and 400 m respectively.
Example 77
(262) In the conductive film stack produced in Example 77, the small lattices 70 had an angle of 50 between the first side 70a and the first direction, a side length of 200 m, and a line width of 6 m.
Examples 78 to 80
(263) The conductive film stacks of Examples 78, 79, and 80 were produced in the same manner as Example 77 except that the small lattices 70 had side lengths of 220, 240, and 400 m respectively.
Example 81
(264) In the conductive film stack produced in Example 81, the small lattices 70 had an angle of 51 between the first side 70a and the first direction, a side length of 200 m, and a line width of 6 m.
Examples 82 to 84
(265) The conductive film stacks of Examples 82, 83, and 84 were produced in the same manner as Example 81 except that the small lattices 70 had side lengths of 220, 240, and 400 m respectively.
Example 85
(266) In the conductive film stack produced in Example 85, the small lattices 70 had an angle of 53 between the first side 70a and the first direction, a side length of 200 m, and a line width of 6 m.
Examples 86 to 88
(267) The conductive film stacks of Examples 86, 87, and 88 were produced in the same manner as Example 85 except that the small lattices 70 had side lengths of 220, 240, and 400 m respectively.
Example 89
(268) In the conductive film stack produced in Example 89, the small lattices 70 had an angle of 54 between the first side 70a and the first direction, a side length of 200 m, and a line width of 6 m.
Examples 90 to 92
(269) The conductive film stacks of Examples 90, 91, and 92 were produced in the same manner as Example 89 except that the small lattices 70 had side lengths of 220, 240, and 400 m respectively.
Example 93
(270) In the conductive film stack produced in Example 93, the small lattices 70 had an angle of 58 between the first side 70a and the first direction, a side length of 200 m, and a line width of 6 m.
Examples 94 to 96
(271) The conductive film stacks of Examples 94, 95, and 96 were produced in the same manner as Example 93 except that the small lattices 70 had side lengths of 220, 240, and 400 m respectively.
Example 97
(272) In the conductive film stack produced in Example 97, the small lattices 70 had an angle of 60 between the first side 70a and the first direction, a side length of 200 m, and a line width of 6 m.
Examples 98 to 100
(273) The conductive film stacks of Examples 98, 99, and 100 were produced in the same manner as Example 97 except that the small lattices 70 had side lengths of 220, 240, and 400 m respectively.
Comparative Example 11
(274) In the conductive film stack produced in Comparative Example 11, the small lattices 70 had an angle of 29 between the first side 70a and the first direction, a side length of 200 m, and a line width of 6 m.
Comparative Examples 12 and 13
(275) The conductive film stacks of Comparative Examples 12 and 13 were produced in the same manner as Comparative Example 11 except that the small lattices 70 had side lengths of 300 and 400 m respectively.
Comparative Example 14
(276) In the conductive film stack produced in Comparative Example 14, the small lattices 70 had an angle of 61 between the first side 70a and the first direction, a side length of 200 m, and a line width of 6 m.
Comparative Examples 15 and 16
(277) The conductive film stacks of Comparative Examples 15 and 16 were produced in the same manner as Comparative Example 14 except that the small lattices 70 had side lengths of 300 and 400 m respectively.
(278) [Evaluation]
(279) The opening ratio calculation and the moire evaluation of the conductive film stacks were carried out in the same manner as First Example. The results are shown in Tables 5 and 6.
(280) TABLE-US-00007 TABLE 5 Small lattice Display device Side Line Horizontal Vertical length width pixel pitch pixel pitch Opening Moire Angle (m) (m) Ph (m) Pv (m) Ratio (%) evaluation Comparative 29 200 6 192 192 94 D Example 11 Comparative 29 300 6 192 192 96 D Example 12 Comparative 29 400 6 192 192 97 D Example 13 Example 41 30 200 6 192 192 94 C Example 42 30 220 6 192 192 95 B Example 43 30 240 6 192 192 95 B Example 44 30 400 6 192 192 97 C Example 45 32 200 6 192 192 94 B Example 46 32 220 6 192 192 95 A Example 47 32 240 6 192 192 95 A Example 48 32 400 6 192 192 97 B Example 49 36 200 6 192 192 94 B Example 50 36 220 6 192 192 95 A Example 51 36 240 6 192 192 95 A Example 52 36 400 6 192 192 97 B Example 53 37 200 6 192 192 94 B Example 54 37 220 6 192 192 95 A Example 55 37 240 6 192 192 95 A Example 56 37 400 6 192 192 97 B Example 57 39 200 6 192 192 94 B Example 58 39 220 6 192 192 95 A Example 59 39 240 6 192 192 95 A Example 60 39 400 6 192 192 97 B Example 61 40 200 6 192 192 94 C Example 62 40 220 6 192 192 95 B Example 63 40 240 6 192 192 95 B Example 64 40 400 6 192 192 97 C Example 65 44 200 6 192 192 94 C Example 66 44 220 6 192 192 95 B Example 67 44 240 6 192 192 95 B Example 68 44 400 6 192 192 97 C Example 69 45 200 6 192 192 94 C Example 70 45 220 6 192 192 95 C Example 71 45 240 6 192 192 95 C Example 72 45 400 6 192 192 97 C
(281) TABLE-US-00008 TABLE 6 Small lattice Display device Side Line Horizontal Vertical length width pixel pitch pixel pitch Opening Moire Angle (m) (m) Ph (m) Pv (m) Ratio (%) evaluation Example 73 46 200 6 192 192 94 C Example 74 46 220 6 192 192 96 B Example 75 46 240 6 192 192 97 B Example 76 46 400 6 192 192 94 C Example 77 50 200 6 192 192 95 C Example 78 50 220 6 192 192 95 B Example 79 50 240 6 192 192 97 B Example 80 50 400 6 192 192 94 C Example 81 51 200 6 192 192 95 B Example 82 51 220 6 192 192 95 A Example 83 51 240 6 192 192 97 A Example 84 51 400 6 192 192 94 B Example 85 53 200 6 192 192 95 B Example 86 53 220 6 192 192 95 A Example 87 53 240 6 192 192 97 A Example 88 53 400 6 192 192 94 B Example 89 54 200 6 192 192 95 B Example 90 54 220 6 192 192 95 A Example 91 54 240 6 192 192 97 A Example 92 54 400 6 192 192 94 B Example 93 58 200 6 192 192 95 B Example 94 58 220 6 192 192 95 A Example 95 58 240 6 192 192 97 A Example 96 58 400 6 192 192 94 B Example 97 60 200 6 192 192 95 C Example 98 60 220 6 192 192 95 B Example 99 60 240 6 192 192 97 B Example 100 60 400 6 192 192 94 C Comparative 61 200 6 192 192 95 D Example 14 Comparative 61 300 6 192 192 95 D Example 15 Comparative 61 400 6 192 192 97 D Example 16
(282) As shown in Tables 5 and 6, the conductive film stacks of Comparative Examples 11 to 16 were evaluated as D, and had highly visible moire. Of Examples 41 to 100, in Examples 41, 44, 61, 64, 65, 68 to 73, 76, 77, 80, 97, and 100, the moire was only slightly visible to an acceptable extent. In the other Examples, Examples 42, 43, 45, 48, 49, 52, 53, 56, 57, 60, 62, 63, 66, 67, 74, 75, 78, 79, 81, 84, 85, 88, 89, 92, 93, 96, 98, and 99 were desirable because the moire was hardly generated. In particular, in Examples 46, 47, 50, 51, 54, 55, 58, 59, 82, 83, 86, 87, 90, 91, 94, and 95, the moire generation was not observed because the small lattices 70 had an angle of 32 to 39 between the first side 70a and the first direction and a side length of 220 m or 240 m.
(283) Projected capacitive touch panels 50 were produced using the conductive film stacks 54 of Examples 41 to 100 respectively. When the touch panels 50 were operated by a finger touch, they exhibited high response speeds and excellent detection sensitivities. Furthermore, when two or more points were touched, the touch panels 50 exhibited the same excellent properties. Thus, it was confirmed that the touch panels 50 were capable of multi-touch detection.
Third Example
(284) In Third Example, conductive film stacks of Comparative Examples 21 to 26 and Examples 101 to 160 were produced respectively. The opening ratio of each conductive film stack was calculated, and the moire of each conductive film stack was evaluated. The components, calculation results, and evaluation results of Comparative Examples 21 to 26 and Examples 101 to 160 are shown in Tables 7 and 8.
Examples 101 to 160 and Comparative Examples 21 to 26
(285) (Photosensitive Silver Halide Material)
(286) A roll photosensitive silver halide material was prepared in the same manner as First Example.
(287) (Exposure)
(288) An A4 (210 mm297 mm) sized area of the first transparent substrate 12A was exposed in the pattern of the first conductive film 10A shown in
(289) (Development Treatment)
(290) The exposed photosensitive material was treated with the above treatment agents of First Example using an automatic processor FG-710PTS manufactured by FUJIFILM Corporation under the following conditions. A development treatment was carried out at 35 C. for 30 seconds, a fixation treatment was carried out at 34 C. for 23 seconds, and then a water washing treatment was carried out for 20 seconds at a water flow rate of 5 L/min.
Example 101
(291) In the conductive film stack produced in Example 101, the first large lattices 68A in the first conductive part 14A of the first conductive film 10A had an aspect ratio (Lva/Lha) of 0.5773, the second large lattices 68B in the second conductive part 14B of the second conductive film 10B had an aspect ratio (Lvb/Lhb) of 0.5773, and the thin metal wires 16 had a thin wire pitch Ps of 200 m and a line width of 6 m.
Examples 102 to 104
(292) The conductive film stacks of Examples 102, 103, and 104 were produced in the same manner as Example 101 except that the thin metal wires 16 had thin wire pitches Ps of 220, 240, and 400 m respectively.
Example 105
(293) In the conductive film stack produced in Example 105, the first large lattices 68A and the second large lattices 68B had an aspect ratio of 0.6248, and the thin metal wires 16 had a thin wire pitch Ps of 200 m and a line width of 6 m.
Examples 106 to 108
(294) The conductive film stacks of Examples 106, 107, and 108 were produced in the same manner as Example 105 except that the thin metal wires 16 had thin wire pitches Ps of 220, 240, and 400 m respectively.
Example 109
(295) In the conductive film stack produced in Example 109, the first large lattices 68A and the second large lattices 68B had an aspect ratio of 0.7266, and the thin metal wires 16 had a thin wire pitch Ps of 200 m and a line width of 6 m.
Examples 110 to 112
(296) The conductive film stacks of Examples 110, 111, and 112 were produced in the same manner as Example 109 except that the thin metal wires 16 had thin wire pitches Ps of 220, 240, and 400 m respectively.
Example 113
(297) In the conductive film stack produced in Example 113, the first large lattices 68A and the second large lattices 68B had an aspect ratio of 0.7535, and the thin metal wires 16 had a thin wire pitch Ps of 200 m and a line width of 6 m.
Examples 114 to 116
(298) The conductive film stacks of Examples 114, 115, and 116 were produced in the same manner as Example 113 except that the thin metal wires 16 had thin wire pitches Ps of 220, 240, and 400 m respectively.
Example 117
(299) In the conductive film stack produced in Example 117, the first large lattices 68A and the second large lattices 68B had an aspect ratio of 0.8098, and the thin metal wires 16 had a thin wire pitch Ps of 200 m and a line width of 6 m.
Examples 118 to 120
(300) The conductive film stacks of Examples 118, 119, and 120 were produced in the same manner as Example 117 except that the thin metal wires 16 had thin wire pitches Ps of 220, 240, and 400 m respectively.
Example 121
(301) In the conductive film stack produced in Example 121, the first large lattices 68A and the second large lattices 68B had an aspect ratio of 0.8391, and the thin metal wires 16 had a thin wire pitch Ps of 200 m and a line width of 6 m.
Examples 122 to 124
(302) The conductive film stacks of Examples 122, 123, and 124 were produced in the same manner as Example 121 except that the thin metal wires 16 had thin wire pitches Ps of 220, 240, and 400 m respectively.
Example 125
(303) In the conductive film stack produced in Example 125, the first large lattices 68A and the second large lattices 68B had an aspect ratio of 0.9657, and the thin metal wires 16 had a thin wire pitch Ps of 200 m and a line width of 6 m.
Examples 126 to 128
(304) The conductive film stacks of Examples 126, 127, and 128 were produced in the same manner as Example 125 except that the thin metal wires 16 had thin wire pitches Ps of 220, 240, and 400 m respectively.
Example 129
(305) In the conductive film stack produced in Example 129, the first large lattices 68A and the second large lattices 68B had an aspect ratio of 1.0000, and the thin metal wires 16 had a thin wire pitch Ps of 200 m and a line width of 6 m.
Examples 130 to 132
(306) The conductive film stacks of Examples 130, 131, and 132 were produced in the same manner as Example 129 except that the thin metal wires 16 had thin wire pitches Ps of 220, 240, and 400 m respectively.
Example 133
(307) In the conductive film stack produced in Example 133, the first large lattices 68A and the second large lattices 68B had an aspect ratio of 1.0356, and the thin metal wires 16 had a thin wire pitch Ps of 200 m and a line width of 6 m.
Examples 134 to 136
(308) The conductive film stacks of Examples 134, 135, and 136 were produced in the same manner as Example 133 except that the thin metal wires 16 had thin wire pitches Ps of 220, 240, and 400 m respectively.
Example 137
(309) In the conductive film stack produced in Example 137, the first large lattices 68A and the second large lattices 68B had an aspect ratio of 1.1917, and the thin metal wires 16 had a thin wire pitch Ps of 200 m and a line width of 6 m.
Examples 138 to 140
(310) The conductive film stacks of Examples 138, 139, and 140 were produced in the same manner as Example 137 except that the thin metal wires 16 had thin wire pitches Ps of 220, 240, and 400 m respectively.
Example 141
(311) In the conductive film stack produced in Example 141, the first large lattices 68A and the second large lattices 68B had an aspect ratio of 1.2349, and the thin metal wires 16 had a thin wire pitch Ps of 200 m and a line width of 6 m.
Examples 142 to 144
(312) The conductive film stacks of Examples 142, 143, and 144 were produced in the same manner as Example 141 except that the thin metal wires 16 had thin wire pitches Ps of 220, 240, and 400 m respectively.
Example 145
(313) In the conductive film stack produced in Example 145, the first large lattices 68A and the second large lattices 68B had an aspect ratio of 1.3271, and the thin metal wires 16 had a thin wire pitch Ps of 200 m and a line width of 6 m.
Examples 146 to 148
(314) The conductive film stacks of Examples 146, 147, and 148 were produced in the same manner as Example 145 except that the thin metal wires 16 had thin wire pitches Ps of 220, 240, and 400 m respectively.
Example 149
(315) In the conductive film stack produced in Example 149, the first large lattices 68A and the second large lattices 68B had an aspect ratio of 1.3763, and the thin metal wires 16 had a thin wire pitch Ps of 200 m and a line width of 6 m.
Examples 150 to 152
(316) The conductive film stacks of Examples 150, 151, and 152 were produced in the same manner as Example 153 except that the thin metal wires 16 had thin wire pitches Ps of 220, 240, and 400 m respectively.
Example 153
(317) In the conductive film stack produced in Example 153, the first large lattices 68A and the second large lattices 68B had an aspect ratio of 1.6004, and the thin metal wires 16 had a thin wire pitch Ps of 200 m and a line width of 6 m.
Examples 154 to 156
(318) The conductive film stacks of Examples 154, 155, and 156 were produced in the same manner as Example 149 except that the thin metal wires 16 had thin wire pitches Ps of 220, 240, and 400 m respectively.
Example 157
(319) In the conductive film stack produced in Example 157, the first large lattices 68A and the second large lattices 68B had an aspect ratio of 1.7321, and the thin metal wires 16 had a thin wire pitch Ps of 200 m and a line width of 6 m.
Examples 158 to 160
(320) The conductive film stacks of Examples 158, 159, and 160 were produced in the same manner as Example 157 except that the thin metal wires 16 had thin wire pitches Ps of 220, 240, and 400 m respectively.
Comparative Example 21
(321) In the conductive film stack produced in Comparative Example 21, the first large lattices 68A and the second large lattices 68B had an aspect ratio of 0.5543, and the thin metal wires 16 had a thin wire pitch Ps of 200 m and a line width of 6 m.
Comparative Examples 22 and 23
(322) The conductive film stacks of Comparative Example 22 and 23 were produced in the same manner as Comparative Example 21 except that the thin metal wires 16 had thin wire pitches Ps of 300 and 400 m respectively.
Comparative Example 24
(323) In the conductive film stack produced in Comparative Example 24, the first large lattices 68A and the second large lattices 68B had an aspect ratio of 1.8040, and the thin metal wires 16 had a thin wire pitch Ps of 200 m and a line width of 6 m.
Comparative Examples 25 and 26
(324) The conductive film stacks of Comparative Example 25 and 26 were produced in the same manner as Comparative Example 24 except that the thin metal wires 16 had thin wire pitches Ps of 300 and 400 m respectively.
(325) [Evaluation]
(326) The opening ratio calculation and the moire evaluation of the conductive film stacks were carried out in the same manner as First Example. The results are shown in Tables 7 and 8.
(327) TABLE-US-00009 TABLE 7 Large lattice Display device Line Horizontal Vertical Pitch Ps width pixel pitch pixel pitch Opening Moire Aspect ratio (m) (m) Ph (m) Pv (m) Ratio (%) evaluation Comparative 0.5543 200 6 192 192 94 D Example 21 Comparative 0.5543 300 6 192 192 96 D Example 22 Comparative 0.5543 400 6 192 192 97 D Example 23 Example 101 0.5773 200 6 192 192 94 C Example 102 0.5773 220 6 192 192 95 B Example 103 0.5773 240 6 192 192 95 B Example 104 0.5773 400 6 192 192 97 C Example 105 0.6248 200 6 192 192 94 B Example 106 0.6248 220 6 192 192 95 A Example 107 0.6248 240 6 192 192 95 A Example 108 0.6248 400 6 192 192 97 B Example 109 0.7266 200 6 192 192 94 B Example 110 0.7266 220 6 192 192 95 A Example 111 0.7266 240 6 192 192 95 A Example 112 0.7266 400 6 192 192 97 B Example 113 0.7535 200 6 192 192 94 B Example 114 0.7535 220 6 192 192 95 A Example 115 0.7535 240 6 192 192 95 A Example 116 0.7535 400 6 192 192 97 B Example 117 0.8098 200 6 192 192 94 B Example 118 0.8098 220 6 192 192 95 A Example 119 0.8098 240 6 192 192 95 A Example 120 0.8098 400 6 192 192 97 B Example 121 0.8391 200 6 192 192 94 C Example 122 0.8391 220 6 192 192 95 B Example 123 0.8391 240 6 192 192 95 B Example 124 0.8391 400 6 192 192 97 C Example 125 0.9657 200 6 192 192 94 C Example 126 0.9657 220 6 192 192 95 B Example 127 0.9657 240 6 192 192 95 B Example 128 0.9657 400 6 192 192 97 C Example 129 1.0000 200 6 192 192 94 C Example 130 1.0000 220 6 192 192 95 C Example 131 1.0000 240 6 192 192 95 C Example 132 1.0000 400 6 192 192 97 C
(328) TABLE-US-00010 TABLE 8 Large lattice Display device Line Horizontal Vertical Pitch Ps width pixel pitch pixel pitch Opening Moire Aspect ratio (m) (m) Ph (m) Pv (m) Ratio (%) evaluation Example 133 1.0356 200 6 192 192 94 C Example 134 1.0356 220 6 192 192 96 B Example 135 1.0356 240 6 192 192 97 B Example 136 1.0356 400 6 192 192 94 C Example 137 1.1917 200 6 192 192 95 C Example 138 1.1917 220 6 192 192 95 B Example 139 1.1917 240 6 192 192 97 B Example 140 1.1917 400 6 192 192 94 C Example 141 1.2349 200 6 192 192 95 B Example 142 1.2349 220 6 192 192 95 A Example 143 1.2349 240 6 192 192 97 A Example 144 1.2349 400 6 192 192 94 B Example 145 1.3271 200 6 192 192 95 B Example 146 1.3271 220 6 192 192 95 A Example 147 1.3271 240 6 192 192 97 A Example 148 1.3271 400 6 192 192 94 B Example 149 1.3763 200 6 192 192 95 B Example 150 1.3763 220 6 192 192 95 A Example 151 1.3763 240 6 192 192 97 A Example 152 1.3763 400 6 192 192 94 B Example 153 1.6004 200 6 192 192 95 B Example 154 1.6004 220 6 192 192 95 A Example 155 1.6004 240 6 192 192 97 A Example 156 1.6004 400 6 192 192 94 B Example 157 1.7321 200 6 192 192 95 C Example 158 1.7321 220 6 192 192 95 B Example 159 1.7321 240 6 192 192 97 B Example 160 1.7321 400 6 192 192 94 C Comparative 1.8040 200 6 192 192 95 D Example 24 Comparative 1.8040 300 6 192 192 95 D Example 25 Comparative 1.8040 400 6 192 192 97 D Example 26
(329) As shown in Tables 7 and 8, the conductive film stacks of Comparative Examples 21 to 26 were evaluated as D, and had highly visible moire. Of Examples 101 to 160, in Examples 101, 104, 121, 124, 125, 128 to 133, 136, 137, 140, 157, and 160, the moire was only slightly visible to an acceptable extent. In the other Examples, Examples 102, 103, 105, 108, 109, 112, 113, 116, 117, 120, 122, 123, 126, 127, 134, 135, 138, 139, 141, 144, 145, 148, 149, 152, 153, 156, 158, and 159 were desirable because the moire was hardly generated. In particular, in Examples 106, 107, 110, 111, 114, 115, 118, 119, 142, 143, 146, 147, 150, 151, 154, and 155, the moire generation was not observed because the aspect ratio of the first large lattices 68A and the second large lattices 68B was more than 0.62 and less than 0.81, or more than 1.23 and less than 1.61, and the thin metal wires 16 had a thin wire pitch Ps of 220 m or 240 m.
(330) Projected capacitive touch panels 50 were produced using the conductive film stacks 54 of Examples 101 to 160 respectively. When the touch panels 50 were operated by a finger touch, they exhibited high response speeds and excellent detection sensitivities. Furthermore, when two or more points were touched, the touch panels 50 exhibited the same excellent properties. Thus, it was confirmed that the touch panels 50 were capable of multi-touch detection.
Fourth Example
(331) In Fourth Example, conductive film stacks of Comparative Examples 31 to 36 and Examples 161 to 220 were produced respectively. The opening ratio of each conductive film stack was calculated, and the moire of each conductive film stack was evaluated. The components, calculation results, and evaluation results of Comparative Examples 31 to 36 and Examples 161 to 220 are shown in Tables 9 and 10.
Examples 161 to 220 and Comparative Examples 31 to 36
(332) The conductive film stacks were produced and evaluated in the same manner as Third Example except that the first conductive film 110A was exposed in the pattern shown in
Example 161
(333) In the conductive film stack produced in Example 161, the first large lattices 118A in the first conductive part 114A of the first conductive film 110A had an aspect ratio (Lva/Lha) of 0.5773, the second large lattices 118B in the second conductive part 114B of the second conductive film 110B had an aspect ratio (Lvb/Lhb) of 0.5773, and the thin metal wires 16 had a thin wire pitch Ps of 200 m and a line width of 6 m.
Examples 162 to 220 and Comparative Examples 31 to 36
(334) The conductive film stacks of Examples 162 to 220 were produced in the same manner as Examples 102 to 160 of Third Example respectively. The conductive film stacks of Comparative Examples 31 to 36 were produced in the same manner as Comparative Examples 21 to 26 of Third Example respectively.
(335) TABLE-US-00011 TABLE 9 Large lattice Display device Line Horizontal Vertical Pitch Ps width pixel pitch pixel pitch Opening Moire Aspect ratio (m) (m) Ph (m) Pv (m) Ratio (%) evaluation Comparative 0.5543 200 6 192 192 95 D Example 31 Comparative 0.5543 300 6 192 192 96 D Example 32 Comparative 0.5543 400 6 192 192 97 D Example 33 Example 161 0.5773 200 6 192 192 94 C Example 162 0.5773 220 6 192 192 94 B Example 163 0.5773 240 6 192 192 95 B Example 164 0.5773 400 6 192 192 97 B Example 165 0.6248 200 6 192 192 94 B Example 166 0.6248 220 6 192 192 95 A Example 167 0.6248 240 6 192 192 95 A Example 168 0.6248 400 6 192 192 97 B Example 169 0.7266 200 6 192 192 95 B Example 170 0.7266 220 6 192 192 95 A Example 171 0.7266 240 6 192 192 95 A Example 172 0.7266 400 6 192 192 97 B Example 173 0.7535 200 6 192 192 94 B Example 174 0.7535 220 6 192 192 95 A Example 175 0.7535 240 6 192 192 96 A Example 176 0.7535 400 6 192 192 97 B Example 177 0.8098 200 6 192 192 95 B Example 178 0.8098 220 6 192 192 95 A Example 179 0.8098 240 6 192 192 95 A Example 180 0.8098 400 6 192 192 97 B Example 181 0.8391 200 6 192 192 94 C Example 182 0.8391 220 6 192 192 95 B Example 183 0.8391 240 6 192 192 95 B Example 184 0.8391 400 6 192 192 97 C Example 185 0.9657 200 6 192 192 94 C Example 186 0.9657 220 6 192 192 95 B Example 187 0.9657 240 6 192 192 96 B Example 188 0.9657 400 6 192 192 97 C Example 189 1.0000 200 6 192 192 94 C Example 190 1.0000 220 6 192 192 95 B Example 191 1.0000 240 6 192 192 95 B Example 192 1.0000 400 6 192 192 97 C
(336) TABLE-US-00012 TABLE 10 Large lattice Display device Line Horizontal Vertical Pitch Ps width pixel pitch pixel pitch Opening Moire Aspect ratio (m) (m) Ph (m) Pv (m) Ratio (%) evaluation Example 193 1.0356 200 6 192 192 95 C Example 194 1.0356 220 6 192 192 96 B Example 195 1.0356 240 6 192 192 97 B Example 196 1.0356 400 6 192 192 94 B Example 197 1.1917 200 6 192 192 95 B Example 198 1.1917 220 6 192 192 95 B Example 199 1.1917 240 6 192 192 97 B Example 200 1.1917 400 6 192 192 94 C Example 201 1.2349 200 6 192 192 95 B Example 202 1.2349 220 6 192 192 96 A Example 203 1.2349 240 6 192 192 97 A Example 204 1.2349 400 6 192 192 94 B Example 205 1.3271 200 6 192 192 95 B Example 206 1.3271 220 6 192 192 95 A Example 207 1.3271 240 6 192 192 97 A Example 208 1.3271 400 6 192 192 94 B Example 209 1.3763 200 6 192 192 95 B Example 210 1.3763 220 6 192 192 95 A Example 211 1.3763 240 6 192 192 97 A Example 212 1.3763 400 6 192 192 95 B Example 213 1.6004 200 6 192 192 95 B Example 214 1.6004 220 6 192 192 96 A Example 215 1.6004 240 6 192 192 97 A Example 216 1.6004 400 6 192 192 94 B Example 217 1.7321 200 6 192 192 95 C Example 218 1.7321 220 6 192 192 94 B Example 219 1.7321 240 6 192 192 97 B Example 220 1.7321 400 6 192 192 94 C Comparative 1.8040 200 6 192 192 95 D Example 34 Comparative 1.8040 300 6 192 192 94 D Example 35 Comparative 1.8040 400 6 192 192 97 D Example 36
(337) As shown in Tables 9 and 10, the conductive film stacks of Comparative Examples 31 to 36 were evaluated as D, and had highly visible moire. Of Examples 161 to 220, in Examples 161, 181, 184, 185, 188, 189, 192, 193, 200, 217, and 220, the moire was only slightly visible to an acceptable extent. In the other Examples, Examples 162 to 165, 168, 169, 172, 173, 176, 177, 180, 182, 183, 186, 187, 190, 191, 194 to 199, 201, 204, 205, 208, 209, 212, 213, 216, 218, and 219 were desirable because the moire was hardly generated. In particular, in Examples 166, 167, 170, 171, 174, 175, 178, 179, 202, 203, 206, 207, 210, 211, 214, and 215, the moire generation was not observed because the aspect ratio of the first large lattices 118A and the second large lattices 118B was more than 0.62 and less than 0.81, or more than 1.23 and less than 1.61, and the thin metal wires 16 had a thin wire pitch Ps of 220 m or 240 m.
(338) Projected capacitive touch panels 50 were produced using the conductive film stacks 104 of Examples 161 to 220 respectively. When the touch panels 50 were operated by a finger touch, they exhibited high response speeds and excellent detection sensitivities. Furthermore, when two or more points were touched, the touch panels 50 exhibited the same excellent properties. Thus, it was confirmed that the touch panels 50 were capable of multi-touch detection.
(339) It is to be understood that the conductive film and the display device of the present invention are not limited to the above embodiments, and various changes and modifications may be made therein without departing from the scope of the present invention.