Oriented loading systems and method for orienting a particle loaded in a well
10875023 ยท 2020-12-29
Assignee
Inventors
- Ching-Wei Tsai (Taoyuan, TW)
- Hsin-Yi Hsieh (Taoyuan, TW)
- Yu-Hsuan Peng (New Taipei, TW)
- Wen-Yih Chen (Taoyuan, TW)
- Chun-Jen Huang (Changhua, TW)
Cpc classification
B01J2219/00317
PERFORMING OPERATIONS; TRANSPORTING
B01L2300/0829
PERFORMING OPERATIONS; TRANSPORTING
G01N1/2813
PHYSICS
B01L3/5085
PERFORMING OPERATIONS; TRANSPORTING
B01L2200/025
PERFORMING OPERATIONS; TRANSPORTING
B01J2219/00468
PERFORMING OPERATIONS; TRANSPORTING
B01L2200/0668
PERFORMING OPERATIONS; TRANSPORTING
B01L2200/0647
PERFORMING OPERATIONS; TRANSPORTING
B01L2200/0663
PERFORMING OPERATIONS; TRANSPORTING
International classification
B01L3/00
PERFORMING OPERATIONS; TRANSPORTING
Abstract
An oriented loading system is provided. The oriented loading system includes a substrate, a plurality of wells formed in the substrate, each well having a bottom and sidewalls, a plurality of particles loaded in the wells, wherein the particle comprises a core structure and an inner layer comprising magnetic material partially covering the core structure such that a part of the core structure uncovered by the inner layer is exposed, and a metal layer comprising magnetic material deposited partially in the sidewalls of the wells, wherein the inner layer is attracted by the metal layer such that the exposed core structure is oriented towards the bottom of the well or the inner layer is oriented towards the bottom of the well.
Claims
1. An oriented loading system, comprising: a substrate; a plurality of wells formed in the substrate, each well having a depth, a bottom and sidewalls, the sidewalls having an upper part and a lower part; a plurality of particles loaded in the wells, wherein each of the plurality of particles comprises a core structure and an inner layer comprising magnetic material partially covering the core structure, or the inner layer is further covered by an outer layer, wherein a part of the core structure uncovered by the inner layer is exposed or is further covered by a coating layer; and a metal layer comprising magnetic material deposited partially in the sidewalls of the wells, wherein the inner layer is attracted by the metal layer such that the exposed core structure or the coating layer, or the inner layer or the outer layer becomes a bottom side of the particle oriented towards the bottom of the well, wherein the bottom side of the particle is modified by an electrically charged molecule, and the bottom of the well is modified by an electrically charged molecule, wherein the electrically charged molecule on the bottom side of the particle comprises opposite charge to the electrically charged molecule on the bottom of the well, wherein when the metal layer is deposited in the upper part of the sidewalls, the exposed core structure or the coating layer which is modified by the electrically charged molecule is oriented towards the bottom of the well, or the inner layer or the outer layer which is modified by the electrically charged molecule is oriented towards the bottom of the well, or when the metal layer is deposited in the lower part of the sidewalls, the inner layer or the outer layer which is modified by the electrically charged molecule is oriented towards the bottom of the well.
2. The oriented loading system as claimed in claim 1, wherein the outer layer and the coating layer comprise non-magnetic material, and the coating layer is different from the outer layer.
3. The oriented loading system as claimed in claim 2, wherein the non-magnetic material is polystyrene, hydrogel, silica, alumina, diamond, or gold, silver, copper or an alloy thereof.
4. The oriented loading system as claimed in claim 1, wherein the core structure comprises polystyrene, hydrogel, silica, alumina, diamond, or gold, silver, copper or an alloy thereof.
5. The oriented loading system as claimed in claim 1, wherein the magnetic material of the inner layer and the magnetic material of the metal layer are independently selected from the group consisting of iron, cobalt, nickel and an alloy thereof.
6. The oriented loading system as claimed in claim 1, wherein the inner layer or the outer layer has a thickness of 5-1,000 nm.
7. The oriented loading system as claimed in claim 1, wherein the particle has a diameter of 50 nm-10 m.
8. The oriented loading system as claimed in claim 1, wherein the well has a width which is 1-3 times the diameter of the particle.
9. The oriented loading system as claimed in claim 1, wherein the well has a depth which is 0.1-5 times the diameter of the particle.
10. The oriented loading system as claimed in claim 1, wherein the particles further comprise neutrally charged molecules modified thereon.
11. The oriented loading system as claimed in claim 1, wherein the electrically charged molecules on the bottom of the wells comprise a zwitterionic molecule.
Description
BRIEF DESCRIPTION OF THE DRAWINGS
(1) The disclosure can be more fully understood by reading the subsequent detailed description and examples with references made to the accompanying drawings, wherein:
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DETAILED DESCRIPTION
(12) In the following detailed description, for purposes of explanation, numerous specific details are set forth in order to provide a thorough understanding of the disclosed embodiments. It will be apparent, however, that one or more embodiments may be practiced without these specific details. In other instances, well-known structures and devices are shown schematically in order to simplify the drawing.
(13) Referring to
(14) In this embodiment, the metal layer 28 is deposited in the upper part of the sidewalls 18 such that the exposed core structure 22 is oriented towards the bottom 16 of the well 14. For example, the metal layer 28 is deposited in the position of the sidewalls 18 which is above , or of the well depth.
(15) In some embodiments, the substrate 12 above the metal layer 28 may comprise non-magnetic materials, for example, silicon, gold, chromium, silver, silica, alumina, TiO.sub.2 or Ta.sub.2O.sub.5.
(16) In some embodiments, the metal layer 28 has a thickness which is about 0.1-0.3 times the diameter of the particle 20.
(17) In some embodiments, the core structure 22 may comprise non-magnetic materials, for example, polymers such as polystyrene or hydrogel, metal oxides such as silica or alumina, metals such as gold, silver or copper or an alloy thereof, or diamond.
(18) In some embodiments, the outer layer 26 may comprise non-magnetic materials, for example, polystyrene, hydrogel, silica, alumina, diamond, or gold, silver, copper or an alloy thereof.
(19) In some embodiments, the inner layer 24 has a thickness of about 5 nm to about 1,000 nm. Optionally, the inner layer 24 has a thickness of about 10 nm to about 100 nm.
(20) In some embodiments, the outer layer 26 has a thickness of about 5 nm to about 1,000 nm. Optionally, the outer layer 26 has a thickness of about 10 nm to about 100 nm.
(21) In some embodiments, the outer layer 26 may be optional.
(22) In some embodiments, about one-third to two-thirds of the surface of the core structure 22 is covered by the inner layer 24 and the outer layer 26.
(23) In some embodiments, the particle 20 has a diameter of about 50 nm to about 10,000 nm (10 m) or about 100 nm to about 10,000 nm (10 m).
(24) In some embodiments, the particle 20 may further comprise a coating layer 27 formed over the exposed core structure 22. The coating layer may comprise non-magnetic materials such as polystyrene, hydrogel, silica, alumina, diamond, or gold, silver, copper or an alloy thereof which is different from the outer layer 26.
(25) In some embodiments, the well 14 has a width d which is about 1-3 times the diameter of the particle 20.
(26) In some embodiments, the well 14 has a depth h which is about 0.1-5 times the diameter of the particle 20.
(27) Referring to
(28) In this embodiment, the metal layer 28 is deposited in the lower part of the sidewalls 18 such that the outer layer 26 is oriented towards the bottom 16 of the well 14. For example, the metal layer 28 is deposited in the position of the sidewalls 18 which is below , or of the well depth.
(29) In some embodiments, the outer layer 26 may be optional.
(30) Referring to
(31) In this embodiment, the metal layer 28 is deposited in the upper part of the sidewalls 18 such that the exposed core structure 22 is oriented towards the bottom 16 of the well 14.
(32) In some embodiments, the outer layer 26 may be optional.
(33) Additionally, the exposed core structure 22 and the bottom 16 of the wells 14 are modified by electrically charged molecules thereon, for example, the exposed core structure 22 is modified by negatively charged molecules 60 thereon, and the bottom 16 of the wells 14 is modified by positively charged molecules 62 thereon. Specifically, the electrically charged molecules on the exposed core structure 22 comprise opposite charge to the electrically charged molecules on the bottom 16 of the wells 14 such that the exposed core structure 22 is oriented towards the bottom 16 of the well 14.
(34) In some embodiments, the electrically charged molecules on the exposed core structure 22 may be a target molecule such as polynucleotide or other molecules such as proteins, viruses, bacteria, cells, negatively charged polymers or negatively charged particles.
(35) In some embodiments, the electrically charged molecules on the bottom 16 of the wells 14 may comprise a zwitterionic molecule such as cysteine-betaine (CB) silane
(36) ##STR00001##
pI=5-6) through pH modulation (for example pH<pI).
(37) Referring to
(38) Referring to
(39) In this embodiment, the metal layer 28 is deposited in the lower part of the sidewalls 18 such that the outer layer 26 is oriented towards the bottom 16 of the well 14.
(40) Additionally, the outer layer 26 and the bottom 16 of the wells 14 are modified by electrically charged molecules thereon, for example, the outer layer 26 is modified by negatively charged molecules 60 thereon, and the bottom 16 of the wells 14 is modified by positively charged molecules 62 thereon. Specifically, the electrically charged molecules on the outer layer 26 comprise opposite charge to the electrically charged molecules on the bottom 16 of the wells 14 such that the outer layer 26 is oriented towards the bottom 16 of the well 14.
(41) In some embodiments, the electrically charged molecules on the outer layer 26 may be a target molecule such as polynucleotide or other molecules such as proteins, viruses, bacteria, cells, negatively charged polymers or negatively charged particles.
(42) In some embodiments, the electrically charged molecules on the bottom 16 of the wells 14 may comprise a zwitterionic molecule such as cysteine-betaine (CB) silane
(43) ##STR00002##
pI=5-6) through pH modulation (for example pH<pI).
(44) In some embodiments, the outer layer 26 may be optional.
(45) In some embodiments, when the outer layer 26 is optional, the electrically charged molecules are modified on the inner layer 24.
(46) Referring to
(47) Referring to
(48) In some embodiments, the negatively charged molecules 60 on the magnetic bead 132 may be a target molecule such as polynucleotide or other molecules such as proteins, viruses, bacteria, cells, negatively charged polymers or negatively charged particles.
(49) In some embodiments, the positively charged molecules 62 on the bottom 16 of the wells 14 may comprise a zwitterionic molecule such as cysteine-betaine (CB) silane
(50) ##STR00003##
pI=5-6) through pH modulation (for example pH<pI).
(51) Referring to
(52) In one embodiment, the exposed core structure 22 is modified by negatively charged molecules 60 thereon and the bottom 16 of the wells 14 is modified by zwitterionic molecules. In this embodiment, the pH value of the environment is lower than the pI value of the zwitterionic molecules such that the zwitterionic molecules modified on the bottom 16 of the wells 14 become positively charged molecules 62, as shown in
(53) In another embodiment, the exposed core structure is modified by negatively charged molecules thereon and the bottom of the wells is modified by zwitterionic molecules. In this embodiment, the pH value of the environment is higher than the pI value of the zwitterionic molecules such that the zwitterionic molecules modified on the bottom of the wells become negatively charged molecules (not shown). At present, the negatively charged molecules modified on the exposed core structure are electrostatically repulsed by the negatively charged molecules modified on the bottom of the wells.
(54) In some embodiments, the neutrally charged molecules 180 may comprise sulfo-betaine (SB) silane
(55) ##STR00004##
pI=2-13).
(56) In some embodiments, the negatively charged molecules 60 may be a target molecule such as polynucleotide or other molecules such as proteins, viruses, bacteria, cells, negatively charged polymers or negatively charged particles.
(57) In some embodiments, the positively charged molecules 62 may comprise a zwitterionic molecule such as cysteine-betaine (CB) silane
(58) ##STR00005##
pI=5-6) through pH modulation (for example pH<pI).
(59) In addition, methods for orienting a particle loaded in a well are provided. In some embodiments, the method comprises the following steps. As shown in
(60) The above methods may be further enhanced by modifying electrically charged molecules on the bottom of the wells and the outer layer or the exposed core structure. Referring to
(61) In
(62) Methods for controlling the loading of the particles via pH modulation are also provided herein. The method comprises the following steps. As shown in
(63) Therefore, the bottom 16 of the wells 14 may be modified by the negatively charged molecules 60 or the positively charged molecules 62 thereon through, for example, pH modulation. For example, in one embodiment, the exposed core structure 22 is modified by negatively charged molecules 60 thereon and the bottom 16 of the wells 14 is modified by zwitterionic molecules. In this embodiment, the pH value of the environment is adjusted to be lower than the pI value of the zwitterionic molecules such that the zwitterionic molecules modified on the bottom 16 of the wells 14 become positively charged molecules 62, as shown in
(64) In the disclosure, the nanoparticles enhance loading efficiency of target molecules. Signals produced from the target molecules are explicitly detected due to the precise orientation of the nanoparticles during detection. The present disclosure provides the methods and systems for precise nanoparticle orientation via modifying the nanoparticles, the nanowells or combination thereof.
EXAMPLES
Example 1
(65) Synthesis of Cysteine-Betaine (CB) Silane
(66) ##STR00006##
(67) Trimethoxy[(3-methylamino)propyl]silane and ethyl 4-bromobutanoate were mixed in ACN by the molar ratio of 1:1.3, and then refluxed for 72 hrs. The product was dried by lyophilizer. For the glass surface modification, the O.sub.2 plasma (or piranha) treated glass was immersed in the 1 (v/v) % product dissolved in EtOH for 1 hr. Then, the glass grafted with CB functional groups was obtained after the ethyl groups hydrolyzed by treating the 2.5M HCl for 30 min.
Example 2
(68) Synthesis of Sulfo-Betaine (SB) Silane
(69) ##STR00007##
(70) 11-Bromo-undec-1-ene (5 ml) in 50 ml THF was stirred for 8 h at RT. The mix solution was concentrated in vacuo, and added DCM 50 ml concentrated two times, then extracted with NaOH. The organic solution through anhydrous sodium sulfate filter, and concentrated in vacuo to obtain N,N-dimethyl-undec-10-enyl-amine (colorless oil). N,N-Dimethyl(11-mercaptoundecyl)amine (3.0 g) was added to a solution of 1,3-propanesultone (1.6 mL) in anhydrous acetone (100 mL), and the reaction mixture was stirred at RT for 24 h. The reaction mixture was filtered, and the solid was washed with acetone and dried in vacuo to obtain 3-(N,N-dimethyl-undec-10-enyl-amino)-propane-1-sulfonic acid (white solid). Nitrogen gas was bubbled through a solution of CH.sub.2CH(CH.sub.2).sub.9N.sup.+(CH.sub.3).sub.2CH.sub.2CH.sub.2CH.sub.2SO.sub.3.sup. (2.7 g) and CH.sub.3C(O)SH (5.0 mL) in methanol (10 mL), ABCN (50 mg) was added, and the solution was irradiated in a photoreactor at RT for 16 h. Anhydrous acetone (200 mL) was added, and the resulting precipitate was filtered and dried in vacuo. The product was recrystallized from acetone/methanol to obtain CH.sub.3C(O)S(CH.sub.2).sub.11N.sup.+(CH.sub.3).sub.2CH.sub.2CH.sub.2CH.sub.2SO.sub.3.sup. (white solid). Nitrogen gas was bubbled through a solution of CH.sub.3C(O)S(CH.sub.2).sub.11N.sup.+(CH.sub.3).sub.2CH.sub.2CH.sub.2CH.sub.2SO.sub.3.sup. (1.0 g) in H.sub.2O (10 mL) for 10 min, NaOH (5 mL, 1.0M) was added, and the solution was stirred for 2 h. The solution was acidified with HCl (6 mL, 1M), filtered into a scintillation vial, frozen, and lyophilized to obtain HS(CH.sub.2).sub.11N.sup.+(CH.sub.3).sub.2CH.sub.2CH.sub.2CH.sub.2SO.sub.3.sup. (white solid).
(71) It will be apparent to those skilled in the art that various modifications and variations can be made to the disclosed embodiments. It is intended that the specification and examples be considered as exemplary only, with the true scope of the disclosure being indicated by the following claims and their equivalents.